JP2014170968A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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Publication number
JP2014170968A
JP2014170968A JP2014122188A JP2014122188A JP2014170968A JP 2014170968 A JP2014170968 A JP 2014170968A JP 2014122188 A JP2014122188 A JP 2014122188A JP 2014122188 A JP2014122188 A JP 2014122188A JP 2014170968 A JP2014170968 A JP 2014170968A
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Japan
Prior art keywords
portion
lead frame
semiconductor light
light emitting
direction
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Granted
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JP2014122188A
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Japanese (ja)
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JP5646784B2 (en
Inventor
Masahiko Kobayakawa
正彦 小早川
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Rohm Co Ltd
ローム株式会社
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Priority to JP2014122188A priority Critical patent/JP5646784B2/en
Publication of JP2014170968A publication Critical patent/JP2014170968A/en
Application granted granted Critical
Publication of JP5646784B2 publication Critical patent/JP5646784B2/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which can properly achieve downsizing.SOLUTION: A semiconductor light-emitting device comprises a first lead frame, a second lead frame, a semiconductor light-emitting element and a case, in which the first lead frame includes a bonding part and a first extension part. A first coated surface of the first extension part is parallel with a first rear face of the bonding part and located closer than the first rear face of the bonding part to an emission direction side in a third direction. The case has a frame-like part which covers a top face of the first extension part in an adhering manner and a first wrapping part which covers the first coated surface of the first extension part in an adhering manner. Thicknesses of the first terminal part, the second terminal part and the bonding part are the same. The first terminal part, the second terminal part, the bonding part and the first wrapping part are flush with each other.

Description

  The present invention relates to a semiconductor light emitting device including a semiconductor light emitting element.

  6 and 7 show an example of a conventional semiconductor light emitting device (see, for example, Patent Document 1). The semiconductor light emitting device X shown in these drawings includes a lead frame 91, an LED chip 92, a case 93, and a translucent resin 94. The lead frame 91 is composed of two belt-like portions having a substantially constant width. The back surface of the lead frame 91 is exposed from the case 93. The LED chip 92 is a light source of the semiconductor light emitting device X, and is bonded to a bonding portion 91 a included in one strip portion of the lead frame 91. The LED chip 92 is connected to the other strip portion of the lead frame 91 by a wire 95.

  In order to increase the brightness of the semiconductor light emitting device X, it is necessary to increase the input power to the LED chip 92. Along with this, the amount of heat generated from the LED chip 92 increases. This heat is preferably released to, for example, a circuit board on which the semiconductor light emitting device X is mounted via the bonding portion 91a. However, in the semiconductor light emitting device X having a long rectangular shape which is relatively small as a whole, there is a problem that when the size of the bonding portion 91a with respect to the case 93 is increased, the lead frame 91 falls out of the case 93.

JP 2005-353914 A

  The present invention has been conceived under the circumstances described above, and an object of the present invention is to provide a semiconductor light emitting device that can be appropriately downsized.

  The semiconductor light emitting device provided by the first aspect of the present invention is bonded to the first lead frame, the second lead frame spaced from the first lead frame in the first direction, and the first lead frame. And a semiconductor light emitting element that is conductive to the second lead frame, and a case made of a white resin that covers a part of each of the first lead frame and the second lead frame and reflects the light of the semiconductor light emitting element. In the semiconductor light emitting device, the first lead frame and the second lead frame each have a first terminal portion and a second terminal portion extending from the case in plan view, and the case includes: A rectangular shape having sides along a first direction and a second direction perpendicular to the first direction, surrounding the semiconductor light emitting element in an annular shape, and its inner wall Has a frame-like part that reflects the light of the semiconductor light emitting element in the emission direction, and the semiconductor light emitting element, a part of the first lead frame, and a part of the second lead frame are defined by the reflector. The first lead frame includes a light-transmitting resin that is exposed from the case through the formed opening, fills the opening, covers the semiconductor light emitting element, and transmits light from the semiconductor light emitting element. A bonding portion having a front surface located in the opening and bonded to the semiconductor light emitting element in a plan view, a first back surface facing away from the surface and exposed from the case, and the bonding portion And includes a portion extending from the bonding portion to a region overlapping with the frame-like portion in plan view. A top surface facing the same side as the surface in the third direction perpendicular to the second direction and a first covering surface facing the same side as the first back surface of the first lead frame in the third direction A first extending portion having the first covering portion, the first covering surface of the first extending portion being parallel to the first back surface of the bonding portion, and the first extending portion of the bonding portion. The case is located on the emission direction side in the third direction from the back surface, and the case closely covers the upper surface of the first extension part with the frame-like part, and the first extension part The first holding part covers the first covering surface in close contact, and the first terminal part, the second terminal part, and the bonding part have the same thickness, and the first terminal part and the second terminal part have the same thickness. Terminal portion, bonding portion and first holding The embedding part is characterized by being flush.

  In a preferred embodiment of the present invention, the second lead frame faces the same side in the third direction as the first covering surface of the first extending portion of the first lead frame and the first covering. A second covering surface parallel to the surface, and a second back surface aligned with the second covering surface in plan view, the second back surface exposed from the case, and the second back surface. The covering surface is located on the emission direction side in the third direction with respect to the second back surface, and the case has a second holding portion that covers the second covering surface in close contact with each other. 2 The back surface and the second holding portion are the same as the first terminal portion, the second terminal portion, the bonding portion, and the first holding portion.

  In a preferred embodiment of the present invention, the second covering surface is in contact with the first lead frame side edge in the first direction, and the second back surface is in contact with the second covering in the first direction. It is further away from the first lead frame than the surface.

  In a preferred embodiment of the present invention, the extension portion of the first lead frame includes one extending from the bonding portion in the second direction.

  In a preferred embodiment of the present invention, the opening of the case is rectangular.

  In a preferred embodiment of the present invention, the thickness of the first lead frame and the second lead frame other than the first terminal portion, the second terminal portion, and the bonding portion is the same as that of the bonding portion. Below the thickness.

  In a preferred embodiment of the present invention, the surfaces on the emission direction side of the first terminal portion, the second terminal portion, the bonding portion, and the extending portion are at the same position in the third direction.

  The semiconductor light emitting device provided by the second aspect of the present invention is bonded to the first lead frame, the second lead frame spaced from the first lead frame in the first direction, and the first lead frame. And a semiconductor light emitting element that is conductive to the second lead frame, and a case made of a white resin that covers a part of each of the first lead frame and the second lead frame and reflects the light of the semiconductor light emitting element. In the semiconductor light emitting device, the first lead frame and the second lead frame each have a first terminal portion and a second terminal portion extending from the case in plan view, and the case includes: A rectangular shape having sides along a first direction and a second direction perpendicular to the first direction, surrounding the semiconductor light emitting element in an annular shape, and its inner wall Has a frame-like part that reflects the light of the semiconductor light emitting element in the emission direction, and the semiconductor light emitting element, a part of the first lead frame, and a part of the second lead frame are defined by the reflector. The first lead frame includes a light-transmitting resin that is exposed from the case through the formed opening, fills the opening, covers the semiconductor light emitting element, and transmits light from the semiconductor light emitting element. A bonding portion having a front surface located in the opening and bonded to the semiconductor light emitting element in a plan view, a first back surface facing away from the surface and exposed from the case, and the bonding portion And includes a portion extending from the bonding portion to a region overlapping with the frame-like portion in plan view. A top surface facing the same side as the surface in the third direction perpendicular to the second direction and a first covering surface facing the same side as the first back surface of the first lead frame in the third direction And the first covering surface of the first extending portion is located closer to the emission direction side in the third direction than the first back surface of the bonding portion. The case includes a first holding portion that covers and covers the upper surface of the first extension portion in close contact with the frame-shaped portion, and covers the first covering surface of the first extension portion in close contact with each other. The first terminal portion, the second terminal portion, and the bonding portion have the same thickness, and the first terminal portion, the second terminal portion, the bonding portion, and the first holding portion Is characterized by being flush.

  In a preferred embodiment of the present invention, the second lead frame includes a first covering surface of the first extending portion of the first lead frame and a second covering surface facing the same side in the third direction. And a second back surface aligned with the second covering surface in plan view, the second back surface is exposed from the case, and the second covering surface is more than the second back surface. The case is located on the emission direction side in the third direction, and the case has a second holding portion that covers the second covering surface in close contact, and the second back surface, the second holding portion, and the above The first terminal portion, the second terminal portion, the bonding portion, and the first holding portion are flush with each other.

  In a preferred embodiment of the present invention, the second covering surface is in contact with the first lead frame side edge in the first direction, and the second back surface is in contact with the second covering in the first direction. It is further away from the first lead frame than the surface.

  In a preferred embodiment of the present invention, the extension portion of the first lead frame includes one extending from the bonding portion in the second direction.

  In a preferred embodiment of the present invention, the opening of the case is rectangular.

  In a preferred embodiment of the present invention, the thickness of the first lead frame and the second lead frame other than the first terminal portion, the second terminal portion, and the bonding portion is the same as that of the bonding portion. Below the thickness.

  In a preferred embodiment of the present invention, the surfaces on the emission direction side of the first terminal portion, the second terminal portion, the bonding portion, and the extending portion are at the same position in the third direction.

  Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

It is a principal part top view which shows an example of the semiconductor light-emitting device concerning this invention. It is a bottom view which shows an example of the semiconductor light-emitting device concerning this invention. It is sectional drawing which follows the III-III line of FIG. It is sectional drawing which follows the IV-IV line of FIG. It is sectional drawing which follows the VV line of FIG. It is sectional drawing which shows an example of the conventional semiconductor light-emitting device. It is sectional drawing which follows the VII-VII line of FIG.

  Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

  1 to 5 show an example of a semiconductor light emitting device according to the present invention. The semiconductor light emitting device A according to this embodiment includes a lead frame 1, an LED chip 2, a case 3, and a translucent resin 4. The semiconductor light emitting device A has a very small long rectangular shape with a length of about 4 mm, a width of about 1 mm, and a height of about 0.6 mm. In FIG. 1, the translucent resin 4 is omitted for convenience of understanding.

  The lead frame 1 is made of, for example, Cu, Ni, or an alloy thereof and is divided into two parts. As shown in FIG. 2, the back surface of the lead frame 1 is exposed from the case 3. Among these, a relatively long portion (first lead frame) has a bonding portion 11, a plurality of thin extension portions 12, and a plurality of thick extension portions 13.

  The bonding part 11 has a band shape and is a part where the LED chip 2 is bonded to the surface. The thin extension part 12 extends from the bonding part 11. In this embodiment, the thickness of the thin extension part 12 is about half that of the bonding part 11. As shown in FIG. 4, the surface of the thin extension portion 12 is flush with the surface of the bonding portion 11. The back surface of the thin extension portion 11 is located inward of the case 3 with respect to the back surface of the bonding portion 11 and is covered with the case 3. As shown in FIG. 5, the thick extension portion 13 extends from the bonding portion 11, and the thickness thereof is the same as that of the bonding portion 11. The surface of the thick extension portion 13 is flush with the surface of the bonding portion 11, and the back surface of the thick extension portion 13 is exposed from the case 3. In the present embodiment, the plurality of thin extension portions 12 and the plurality of thick extension portions 13 are alternately arranged in the longitudinal direction of the frame 1.

  The LED chip 2 is a light source of the semiconductor light emitting device A and is a semiconductor light emitting element that emits light of a predetermined wavelength. The LED chip 2 is made of a semiconductor material such as GaN, for example, and recombines electrons and holes in an active layer sandwiched between an n-type semiconductor layer and a p-type semiconductor layer, thereby causing blue light, green light, red light. Etc. The LED chip 2 is connected to a relatively short portion (second lead frame) of the lead frame 1 by a wire 5.

  The case 3 is made of white resin, for example, and has a long rectangular frame shape as a whole. As shown in FIGS. 3 to 5, the inner surface of the case 3 is a tapered reflector 3 a. The reflector 3a is for reflecting upward the light emitted from the LED chip 2 to the side. As shown in FIG. 4, the case 3 is dressed so as to hold the thin extension portion 12. Further, as shown in FIG. 2, the case 3, the plurality of thin extension portions 12, and the plurality of thick extension portions 13 have a relationship of entering each other.

  The translucent resin 4 is made of, for example, a transparent epoxy resin, and is filled in a space surrounded by the case 3. The translucent resin 4 covers the LED chip 2 and transmits light from the LED chip 2 while protecting the LED chip 2.

  Next, the operation of the semiconductor light emitting device A will be described.

  According to the present embodiment, the case 3 is configured to hold the thin extension portion 12. Thereby, the holding force of the lead frame 1 by the case 3 can be increased. Thereby, it is possible to prevent the lead frame 1 from coming out of the case 3. As a result, as shown in FIG. 2, the semiconductor light emitting device A can increase the area of the lead frame 1 exposed from the case 3 in spite of the very narrow width of about 1 mm. . Therefore, heat from the LED chip 2 can be appropriately released, and the semiconductor light emitting device A can be reduced in size and brightness.

  By alternately arranging the thin extension portions 12 and the thick extension portions 13, the thin extension portions 12 are held in the case 3, and only the thick extension portions 13 exposed from the case 3 lead. It is possible to enlarge the exposed area of the frame 1. This is suitable for reducing the size and the brightness of the semiconductor light emitting device A.

  The semiconductor light emitting device according to the present invention is not limited to the above-described embodiment. The specific configuration of each part of the semiconductor light emitting device according to the present invention can be varied in design in various ways.

A Semiconductor light emitting device 1 Lead frame 2 LED chip (semiconductor light emitting element)
3 Case 4 Translucent resin 5 Wire 11 Bonding part 12 Thin extension part 13 Thick extension part

Claims (14)

  1. A first lead frame;
    A second lead frame spaced from the first lead frame in the first direction;
    A semiconductor light emitting device bonded to the first lead frame and conducting to the second lead frame;
    A case made of a white resin that covers a part of each of the first lead frame and the second lead frame and reflects light of the semiconductor light emitting element;
    A semiconductor light emitting device comprising:
    The first lead frame and the second lead frame each have a first terminal portion and a second terminal portion extending from the case in plan view,
    The case has a rectangular shape having sides along a first direction and a second direction perpendicular to the first direction. The case surrounds the semiconductor light emitting element in an annular shape, and its inner wall surface emits light from the semiconductor light emitting element in the emission direction. It has a frame-shaped part that is a reflector to be reflected,
    The semiconductor light emitting element, a part of the first lead frame and a part of the second lead frame are exposed from the case through the opening defined by the reflector;
    A transparent resin that fills the opening, covers the semiconductor light emitting element, and transmits light from the semiconductor light emitting element;
    The first lead frame is located in the opening in a plan view and has a front surface to which the semiconductor light emitting element is bonded and a bonding portion having a first back surface facing away from the front surface and exposed from the case; It is provided integrally with the bonding part, and includes a portion extending from the bonding part to the region overlapping the frame-like part in plan view, and is perpendicular to both the first and second directions. A first extension portion having a top surface facing the same side as the surface in the third direction and a first covering surface facing the same side as the first back surface of the first lead frame in the third direction. And
    The first covering surface of the first extension portion is parallel to the first back surface of the bonding portion, and is located on the emission direction side in the third direction with respect to the first back surface of the bonding portion. And
    The case includes a first holding portion that closely covers and covers the upper surface of the first extending portion with the frame-shaped portion and covers the first covering surface of the first extending portion. And
    The first terminal part, the second terminal part, and the bonding part have the same thickness, and the first terminal part, the second terminal part, the bonding part, and the first holding part are flush with each other. A semiconductor light emitting device.
  2. The second lead frame has a second covering surface that faces the same side in the third direction as the first covering surface of the first extension portion of the first lead frame and is parallel to the first covering surface. A second rear surface aligned with the second covering surface in plan view,
    The second back surface is exposed from the case,
    The second covering surface is located on the emission direction side in the third direction with respect to the second back surface,
    The case has a second holding portion that covers the second covering surface in close contact,
    2. The semiconductor light emitting device according to claim 1, wherein the second back surface, the second holding portion, and the first terminal portion, the second terminal portion, the bonding portion, and the first holding portion are flush.
  3. The second covering surface is in contact with the first lead frame side edge in the first direction,
    3. The semiconductor light emitting device according to claim 2, wherein the second back surface is further away from the first lead frame than the second covering surface in the first direction.
  4.   4. The semiconductor light emitting device according to claim 1, wherein the extending portion of the first lead frame includes a portion extending from the bonding portion in the second direction. 5.
  5.   The semiconductor light-emitting device according to claim 1, wherein the opening of the case is rectangular.
  6.   6. The thickness of a portion other than the first terminal portion, the second terminal portion, and the bonding portion of the first lead frame and the second lead frame is equal to or less than a thickness of the bonding portion. The semiconductor light emitting device according to any one of the above.
  7.   The surface of the said emission direction side of the said 1st terminal part, the said 2nd terminal part, the said bonding part, and the said extension part is the same position in the said 3rd direction, The Claim 1 thru | or 6 Semiconductor light emitting device.
  8. A first lead frame;
    A second lead frame spaced from the first lead frame in the first direction;
    A semiconductor light emitting device bonded to the first lead frame and conducting to the second lead frame;
    A case made of a white resin that covers a part of each of the first lead frame and the second lead frame and reflects light of the semiconductor light emitting element;
    A semiconductor light emitting device comprising:
    The first lead frame and the second lead frame each have a first terminal portion and a second terminal portion extending from the case in plan view,
    The case has a rectangular shape having sides along a first direction and a second direction perpendicular to the first direction. The case surrounds the semiconductor light emitting element in an annular shape, and its inner wall surface emits light from the semiconductor light emitting element in the emission direction. It has a frame-shaped part that is a reflector to be reflected,
    The semiconductor light emitting element, a part of the first lead frame and a part of the second lead frame are exposed from the case through the opening defined by the reflector;
    A transparent resin that fills the opening, covers the semiconductor light emitting element, and transmits light from the semiconductor light emitting element;
    The first lead frame is located in the opening in a plan view and has a front surface to which the semiconductor light emitting element is bonded and a bonding portion having a first back surface facing away from the front surface and exposed from the case; It is provided integrally with the bonding part, and includes a portion extending from the bonding part to the region overlapping the frame-like part in plan view, and is perpendicular to both the first and second directions. A first extension portion having a top surface facing the same side as the surface in the third direction and a first covering surface facing the same side as the first back surface of the first lead frame in the third direction. And
    The first covering surface of the first extending portion is located on the emission direction side in the third direction with respect to the first back surface of the bonding portion,
    The case includes a first holding portion that closely covers and covers the upper surface of the first extending portion with the frame-shaped portion and covers the first covering surface of the first extending portion. And
    The first terminal portion, the second terminal portion, and the bonding portion have the same thickness, and the first terminal portion, the second terminal portion, the bonding portion, and the first holding portion are flush with each other. A semiconductor light emitting device.
  9. The second lead frame includes a second covering surface facing the same side in the third direction as the first covering surface of the first extension portion of the first lead frame, and the second covering surface in a plan view. A second rear surface side by side,
    The second back surface is exposed from the case,
    The second covering surface is located on the emission direction side in the third direction with respect to the second back surface,
    The case has a second holding portion that covers the second covering surface in close contact,
    The semiconductor light emitting device according to claim 8, wherein the second back surface, the second holding portion, and the first terminal portion, the second terminal portion, the bonding portion, and the first holding portion are flush with each other.
  10. The second covering surface is in contact with the first lead frame side edge in the first direction,
    10. The semiconductor light emitting device according to claim 9, wherein the second back surface is farther from the first lead frame than the second covering surface in the first direction.
  11.   11. The semiconductor light emitting device according to claim 8, wherein the extending portion of the first lead frame includes a portion extending from the bonding portion in the second direction.
  12.   The semiconductor light-emitting device according to claim 8, wherein the opening of the case is rectangular.
  13.   13. The thickness of a portion other than the first terminal portion, the second terminal portion, and the bonding portion of the first lead frame and the second lead frame is equal to or less than the thickness of the bonding portion. The semiconductor light emitting device according to any one of the above.
  14.   The surface on the emission direction side of the first terminal portion, the second terminal portion, the bonding portion, and the extending portion is at the same position in the third direction. Semiconductor light emitting device.
JP2014122188A 2014-06-13 2014-06-13 Semiconductor light emitting device Active JP5646784B2 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000244022A (en) * 1999-02-18 2000-09-08 Fuji Kiko Denshi Kk Chip component type light emitting element
JP2004274027A (en) * 2003-02-18 2004-09-30 Sharp Corp Semiconductor light emitting device, its manufacturing method, and electronic imaging apparatus
JP2004534405A (en) * 2001-06-29 2004-11-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Radiation emitting structure element attachable to surface and method of manufacturing the same
JP2005353914A (en) * 2004-06-11 2005-12-22 Toshiba Corp Semiconductor light emitting device and manufacturing method thereof, and semiconductor light emitting unit
JP3125666U (en) * 2006-07-14 2006-09-28 アドヴァンスト オプトエレクトロニック テクノロジー インコーポレイテッドAdvanced Optoelectronic Technology Inc. Side light-emitting component
JP2007059677A (en) * 2005-08-25 2007-03-08 Toshiba Lighting & Technology Corp Light-emitting diode device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000244022A (en) * 1999-02-18 2000-09-08 Fuji Kiko Denshi Kk Chip component type light emitting element
JP2004534405A (en) * 2001-06-29 2004-11-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Radiation emitting structure element attachable to surface and method of manufacturing the same
JP2004274027A (en) * 2003-02-18 2004-09-30 Sharp Corp Semiconductor light emitting device, its manufacturing method, and electronic imaging apparatus
JP2005353914A (en) * 2004-06-11 2005-12-22 Toshiba Corp Semiconductor light emitting device and manufacturing method thereof, and semiconductor light emitting unit
JP2007059677A (en) * 2005-08-25 2007-03-08 Toshiba Lighting & Technology Corp Light-emitting diode device
JP3125666U (en) * 2006-07-14 2006-09-28 アドヴァンスト オプトエレクトロニック テクノロジー インコーポレイテッドAdvanced Optoelectronic Technology Inc. Side light-emitting component

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