JP2014161890A - Solder powder, solder composition, and printed wiring board - Google Patents
Solder powder, solder composition, and printed wiring board Download PDFInfo
- Publication number
- JP2014161890A JP2014161890A JP2013035994A JP2013035994A JP2014161890A JP 2014161890 A JP2014161890 A JP 2014161890A JP 2013035994 A JP2013035994 A JP 2013035994A JP 2013035994 A JP2013035994 A JP 2013035994A JP 2014161890 A JP2014161890 A JP 2014161890A
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- JP
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- Prior art keywords
- solder powder
- solder
- acid
- treated
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 210
- 239000000843 powder Substances 0.000 title claims abstract description 139
- 239000000203 mixture Substances 0.000 title claims abstract description 60
- -1 aliphatic monocarboxylic acid Chemical class 0.000 claims abstract description 36
- 239000002245 particle Substances 0.000 claims abstract description 29
- 238000002844 melting Methods 0.000 claims abstract description 18
- 230000008018 melting Effects 0.000 claims abstract description 18
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 10
- 230000004907 flux Effects 0.000 claims description 40
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims description 23
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims description 23
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 13
- 239000013008 thixotropic agent Substances 0.000 claims description 13
- 239000012190 activator Substances 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 238000003860 storage Methods 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 230000000052 comparative effect Effects 0.000 description 23
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 17
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 17
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 15
- 238000004381 surface treatment Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 238000002156 mixing Methods 0.000 description 13
- 238000007665 sagging Methods 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 230000006866 deterioration Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 8
- 229940114072 12-hydroxystearic acid Drugs 0.000 description 7
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000007524 organic acids Chemical class 0.000 description 5
- 239000011295 pitch Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000001361 adipic acid Substances 0.000 description 4
- 235000011037 adipic acid Nutrition 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 150000002430 hydrocarbons Chemical group 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000005711 Benzoic acid Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 235000021355 Stearic acid Nutrition 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 239000003945 anionic surfactant Substances 0.000 description 3
- 235000010233 benzoic acid Nutrition 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 3
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 3
- 235000005985 organic acids Nutrition 0.000 description 3
- WQEPLUUGTLDZJY-UHFFFAOYSA-N pentadecanoic acid Chemical compound CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000008117 stearic acid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- UIAFKZKHHVMJGS-UHFFFAOYSA-N 2,4-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1O UIAFKZKHHVMJGS-UHFFFAOYSA-N 0.000 description 2
- OADIZUFHUPTFAG-UHFFFAOYSA-N 2-[2-(2-ethylhexoxy)ethoxy]ethanol Chemical compound CCCCC(CC)COCCOCCO OADIZUFHUPTFAG-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 2
- JOOXCMJARBKPKM-UHFFFAOYSA-N 4-oxopentanoic acid Chemical compound CC(=O)CCC(O)=O JOOXCMJARBKPKM-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- SLYCYWCVSGPDFR-UHFFFAOYSA-N octadecyltrimethoxysilane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OC)(OC)OC SLYCYWCVSGPDFR-UHFFFAOYSA-N 0.000 description 2
- 150000002896 organic halogen compounds Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229960004889 salicylic acid Drugs 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- BEOUGZFCUMNGOU-UHFFFAOYSA-N tuberculostearic acid Chemical compound CCCCCCCCC(C)CCCCCCCCC(O)=O BEOUGZFCUMNGOU-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- QKKSKKMOIOGASY-UHFFFAOYSA-N 2,3-dibromobut-1-ene-1,1-diol Chemical compound CC(Br)C(Br)=C(O)O QKKSKKMOIOGASY-UHFFFAOYSA-N 0.000 description 1
- FJWGRXKOBIVTFA-UHFFFAOYSA-N 2,3-dibromobutanedioic acid Chemical compound OC(=O)C(Br)C(Br)C(O)=O FJWGRXKOBIVTFA-UHFFFAOYSA-N 0.000 description 1
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- KIHBGTRZFAVZRV-UHFFFAOYSA-N 2-Hydroxyoctadecanoic acid Natural products CCCCCCCCCCCCCCCCC(O)C(O)=O KIHBGTRZFAVZRV-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- GHPVDCPCKSNJDR-UHFFFAOYSA-N 2-hydroxydecanoic acid Chemical compound CCCCCCCCC(O)C(O)=O GHPVDCPCKSNJDR-UHFFFAOYSA-N 0.000 description 1
- YDZIJQXINJLRLL-UHFFFAOYSA-N 2-hydroxydodecanoic acid Chemical compound CCCCCCCCCCC(O)C(O)=O YDZIJQXINJLRLL-UHFFFAOYSA-N 0.000 description 1
- KUZABABLVHWUGR-UHFFFAOYSA-N 2-hydroxyheptadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)C(O)=O KUZABABLVHWUGR-UHFFFAOYSA-N 0.000 description 1
- RGMMREBHCYXQMA-UHFFFAOYSA-N 2-hydroxyheptanoic acid Chemical compound CCCCCC(O)C(O)=O RGMMREBHCYXQMA-UHFFFAOYSA-N 0.000 description 1
- JGHSBPIZNUXPLA-UHFFFAOYSA-N 2-hydroxyhexadecanoic acid Chemical compound CCCCCCCCCCCCCCC(O)C(O)=O JGHSBPIZNUXPLA-UHFFFAOYSA-N 0.000 description 1
- JYZJYKOZGGEXSX-UHFFFAOYSA-N 2-hydroxymyristic acid Chemical compound CCCCCCCCCCCCC(O)C(O)=O JYZJYKOZGGEXSX-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- VOIZNVUXCQLQHS-UHFFFAOYSA-N 3-bromobenzoic acid Chemical compound OC(=O)C1=CC=CC(Br)=C1 VOIZNVUXCQLQHS-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- AZXKGUVDIORSED-UHFFFAOYSA-N 4-bromophthalic acid Chemical compound OC(=O)C1=CC=C(Br)C=C1C(O)=O AZXKGUVDIORSED-UHFFFAOYSA-N 0.000 description 1
- FQIUCPGDKPXSLL-UHFFFAOYSA-N 5-bromopyridine-3-carboxylic acid Chemical compound OC(=O)C1=CN=CC(Br)=C1 FQIUCPGDKPXSLL-UHFFFAOYSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 101000853064 Homo sapiens Mitochondrial import inner membrane translocase subunit Tim8 B Proteins 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 235000021353 Lignoceric acid Nutrition 0.000 description 1
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 1
- 102100036655 Mitochondrial import inner membrane translocase subunit Tim8 B Human genes 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 1
- FHKPLLOSJHHKNU-INIZCTEOSA-N [(3S)-3-[8-(1-ethyl-5-methylpyrazol-4-yl)-9-methylpurin-6-yl]oxypyrrolidin-1-yl]-(oxan-4-yl)methanone Chemical compound C(C)N1N=CC(=C1C)C=1N(C2=NC=NC(=C2N=1)O[C@@H]1CN(CC1)C(=O)C1CCOCC1)C FHKPLLOSJHHKNU-INIZCTEOSA-N 0.000 description 1
- ITBPIKUGMIZTJR-UHFFFAOYSA-N [bis(hydroxymethyl)amino]methanol Chemical compound OCN(CO)CO ITBPIKUGMIZTJR-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 229940114077 acrylic acid Drugs 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 239000000440 bentonite Substances 0.000 description 1
- 229910000278 bentonite Inorganic materials 0.000 description 1
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 1
- 229960004365 benzoic acid Drugs 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 229940114055 beta-resorcylic acid Drugs 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229960000448 lactic acid Drugs 0.000 description 1
- 229940040102 levulinic acid Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000006224 matting agent Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- NCIAGQNZQHYKGR-UHFFFAOYSA-N naphthalene-1,2,3-triol Chemical compound C1=CC=C2C(O)=C(O)C(O)=CC2=C1 NCIAGQNZQHYKGR-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 235000019645 odor Nutrition 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000010525 oxidative degradation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000003784 tall oil Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 235000014393 valine Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
本発明は、はんだ粉末、はんだ組成物およびプリント配線基板に関する。 The present invention relates to a solder powder, a solder composition, and a printed wiring board.
近年、電子機器は軽薄短小化に伴い、プリント配線基板の微細化が進み、プリント基板に実装される実装部品の小型化が進んでいる。例えば、スマートフォンのような電子機器では、0402チップ(大きさが0.4mm×0.2mmのチップ)や0603チップ(大きさが0.6mm×0.3mmのチップ)などの微小な実装部品が用いられている。そして、これらの微小な実装部品を基板に実装するために、はんだ組成物(ソルダペースト)の印刷サイズやピッチ(実装部品間隔)も小さくなる。
0402チップや0603チップのような微小部品の実装が特に要求されるのはモジュール部品関連であり、近い将来に0402チップが多く搭載されてくると予測される。そして、その部品間の隙間も0.08〜0.1mmであり、最終的には0.05〜0.06mmの範囲となると予測される。
これらの要求を満たすために、はんだ組成物を印刷し加熱する過程の途中(プリヒート温度領域)での加熱ダレ性が優れていることが要求される。しかし、近年の鉛フリー化の要求により加熱温度が高くなる傾向にあることから、より高度の加熱ダレ性が要求されている。
2. Description of the Related Art In recent years, as electronic devices have become lighter, thinner, and smaller, printed wiring boards have been miniaturized, and mounting components mounted on printed boards have been downsized. For example, in an electronic device such as a smartphone, a small mounting component such as 0402 chip (a chip having a size of 0.4 mm × 0.2 mm) or 0603 chip (a chip having a size of 0.6 mm × 0.3 mm) is used. It is used. And since these minute mounting components are mounted on a board | substrate, the printing size and pitch (mounting component space | interval) of a solder composition (solder paste) also become small.
The mounting of minute parts such as 0402 chip and 0603 chip is particularly required for module parts, and it is predicted that many 0402 chips will be mounted in the near future. And the clearance gap between the parts is also 0.08-0.1 mm, and it is estimated that it will become the range of 0.05-0.06 mm finally.
In order to satisfy these requirements, it is required that the heat sagging property is excellent during the process of printing and heating the solder composition (preheat temperature region). However, since the heating temperature tends to increase due to the recent demand for lead-free, higher heating sag properties are required.
また、微小部品の微小ピッチでのはんだ付けを行うために、はんだ粉末の粒子径を微粉化することが要求されている。そして、このような微細部分のはんだ付けに適するはんだ粉末の平均粒子径は、20μm未満のものが望ましく、実際には数μmのものが使用されている。
ここで、平均粒子径が小さいはんだ粉末にすると、その比表面積は増大し、その分だけはんだ粉末の表面に生成される酸化物量も多くなる。はんだ粉末の表面に生成された酸化物を溶融させて除去するには、非常に高い還元力のあるフラックス成分を有するはんだ組成物を使用するか、或いは、実装工程においてリフロー装置の条件として窒素リフローを使用することで、実装がなされている。
しかしながら、非常に高い還元力のあるフラックス成分を用いる場合、フラックス成分が有する高い活性のために、保存安定性や、ペースト印刷工程での増粘が懸念される。また、窒素リフローを使用することは、ランニングコストが上がる要因ともなる。
Further, in order to perform soldering at a minute pitch of minute parts, it is required to make the particle diameter of the solder powder fine. And the average particle diameter of the solder powder suitable for soldering such a fine part is desirably less than 20 μm, and in fact, a particle having a size of several μm is used.
Here, when the solder powder having a small average particle diameter is used, the specific surface area increases, and the amount of oxide generated on the surface of the solder powder increases accordingly. In order to melt and remove the oxide generated on the surface of the solder powder, use a solder composition having a flux component having a very high reducing power, or nitrogen reflow as a condition of the reflow apparatus in the mounting process. Has been implemented using.
However, when a flux component having a very high reducing power is used, there is a concern about storage stability and thickening in the paste printing process due to the high activity of the flux component. Also, the use of nitrogen reflow is a factor that increases running costs.
一方で、はんだ組成物の各種物性を向上させる目的で、はんだ粉末の表面処理が検討されている。例えば、有機酸と有機溶剤とからなる処理液により表面処理をしたはんだ粉末が提案されている(特許文献1)。また、アジピン酸とはんだ粉末表面の金属との有機金属化合物を形成させてなるはんだ粉末が提案されている(特許文献2)。さらに、特定の有機ケイ素化合物により表面処理をしたはんだ粉末が提案されている(特許文献3)。また、リン酸系アニオン界面活性剤により表面処理をしたはんだ粉末が提案されている(特許文献4)。 On the other hand, surface treatment of solder powder has been studied for the purpose of improving various physical properties of the solder composition. For example, a solder powder that has been surface-treated with a treatment liquid comprising an organic acid and an organic solvent has been proposed (Patent Document 1). In addition, a solder powder formed by forming an organometallic compound of adipic acid and a metal on the surface of the solder powder has been proposed (Patent Document 2). Furthermore, a solder powder that has been surface-treated with a specific organosilicon compound has been proposed (Patent Document 3). In addition, a solder powder that has been surface-treated with a phosphoric acid-based anionic surfactant has been proposed (Patent Document 4).
しかしながら、前記特許文献1〜4に記載のはんだ粉末を用いたとしても、はんだ融点が高く(例えば200℃以上)、平均粒子径が小さい(例えば30μm以下)場合には、はんだ組成物における加熱ダレ性、溶融性および保存安定性の全てを満たすことができなかった。 However, even when the solder powders described in Patent Documents 1 to 4 are used, if the solder melting point is high (for example, 200 ° C. or higher) and the average particle diameter is small (for example, 30 μm or less), All of the properties, meltability and storage stability could not be satisfied.
そこで、本発明は、はんだ融点が高く、平均粒子径が小さいはんだ粉末を用いた場合にも、加熱ダレ性、溶融性および保存安定性が優れたはんだ組成物が得られるはんだ粉末、並びに、それを用いたはんだ組成物およびプリント配線基板を提供することを目的とする。 Accordingly, the present invention provides a solder powder that can provide a solder composition having excellent heat sagging property, meltability and storage stability even when a solder powder having a high solder melting point and a small average particle size is used, and An object of the present invention is to provide a solder composition and a printed wiring board using the above.
前記課題を解決すべく、本発明のはんだ粉末は、1分子中に1つ以上の水酸基を有する、脂肪族モノカルボン酸または芳香族モノカルボン酸を、被処理はんだ粉末の表面に、付着させ、吸着させ、または、結合させてなることを特徴とするものである。 In order to solve the above problems, the solder powder of the present invention has an aliphatic monocarboxylic acid or aromatic monocarboxylic acid having one or more hydroxyl groups in one molecule attached to the surface of the solder powder to be treated. It is characterized by being adsorbed or bonded.
本発明のはんだ粉末においては、前記脂肪族モノカルボン酸における炭化水素基の炭素数が、12以上20以下であることが好ましい。
本発明のはんだ粉末においては、前記芳香族モノカルボン酸における炭化水素基の炭素数が、6以上であることが好ましい。
本発明のはんだ粉末においては、前記被処理はんだ粉末の平均粒子径が、30μm以下であることが好ましい。
本発明のはんだ粉末においては、前記被処理はんだ粉末の融点が、200℃以上であることが好ましい。
In the solder powder of this invention, it is preferable that carbon number of the hydrocarbon group in the said aliphatic monocarboxylic acid is 12-20.
In the solder powder of the present invention, it is preferable that the hydrocarbon group in the aromatic monocarboxylic acid has 6 or more carbon atoms.
In the solder powder of the present invention, it is preferable that an average particle diameter of the solder powder to be processed is 30 μm or less.
In the solder powder of the present invention, the solder powder to be processed preferably has a melting point of 200 ° C. or higher.
本発明のはんだ組成物は、前記はんだ粉末と、ロジン系樹脂、活性剤、溶剤およびチクソ剤を含有するフラックスとを含有することを特徴とするものである。
本発明のプリント配線基板は、前記はんだ組成物を用いて電子部品をプリント配線基板に実装したことを特徴とするものである。
The solder composition of the present invention comprises the solder powder and a flux containing a rosin resin, an activator, a solvent, and a thixotropic agent.
The printed wiring board of the present invention is characterized in that an electronic component is mounted on a printed wiring board using the solder composition.
本発明のはんだ粉末により、はんだ融点が高く、平均粒子径が小さいはんだ粉末を用いた場合にも、加熱ダレ性および保存安定性が優れたはんだ組成物が得られる理由は、必ずしも定かでは無いが、本発明者は以下のように推察する。
すなわち、はんだ組成物のフラックス中には、はんだ粉末の表面の酸化化合物を還元し、はんだを溶融するために、ロジン系樹脂、カルボン酸、無機酸塩など金属酸化物を還元する能力のある活性剤、アルコール類などの溶剤、チクソ剤が含有されており、これらの化合物の官能基として水酸基を有するものが多く使用される。実際に、チクソ剤としてアミド結合を有する化合物(アミド類)のチクソ性や粘度特性の要因としてアミド結合同士の水素結合による相互作用が示唆されている場合もある。
本発明においては、1分子中に1つ以上の水酸基を有する、脂肪族モノカルボン酸または芳香族モノカルボン酸を、被処理はんだ粉末の表面に、付着させ、吸着させ、または、結合させている。このような場合、はんだ粉末の表面では、金属とカルボン酸との間で結合のような状態となっており、はんだ粉末の表面は、1分子中に1つ以上の水酸基を有する、脂肪族モノカルボン酸または芳香族モノカルボン酸の皮膜により覆われている。これにより、はんだ粉末の酸化による特性の劣化を防止でき、はんだ組成物の保存安定性を向上できる。また、はんだ粉末の表面の皮膜が水酸基を有することで、フラックスに含まれる化合物の水酸基と水素結合を生成させることができ、加熱ダレに対する良好な特性を発現できるものと本発明者は推察する。
The reason why a solder composition having excellent heat sagging property and storage stability can be obtained even when a solder powder having a high solder melting point and a small average particle diameter is used by the solder powder of the present invention is not necessarily clear. The present inventors infer as follows.
That is, in the flux of the solder composition, there is an activity capable of reducing metal oxides such as rosin resin, carboxylic acid and inorganic acid salt in order to reduce the oxide compound on the surface of the solder powder and melt the solder. Agents, solvents such as alcohols, and thixotropic agents are contained, and those having a hydroxyl group as a functional group of these compounds are often used. Actually, there is a case where an interaction due to hydrogen bonding between amide bonds is suggested as a factor of thixotropy and viscosity characteristics of a compound (amides) having an amide bond as a thixotropic agent.
In the present invention, an aliphatic monocarboxylic acid or an aromatic monocarboxylic acid having one or more hydroxyl groups in one molecule is attached, adsorbed, or bonded to the surface of the solder powder to be treated. . In such a case, the surface of the solder powder is in a state like a bond between the metal and the carboxylic acid, and the surface of the solder powder has one or more hydroxyl groups in one molecule. It is covered with a film of carboxylic acid or aromatic monocarboxylic acid. Thereby, the characteristic deterioration by the oxidation of solder powder can be prevented, and the storage stability of a solder composition can be improved. In addition, the present inventors infer that the film on the surface of the solder powder has a hydroxyl group, whereby a hydroxyl group and a hydrogen bond of the compound contained in the flux can be generated, and good characteristics against heating sagging can be expressed.
本発明によれば、はんだ融点が高く、平均粒子径が小さいはんだ粉末を用いた場合にも、加熱ダレ性、溶融性および保存安定性が優れたはんだ組成物が得られるはんだ粉末、並びに、それを用いたはんだ組成物およびプリント配線基板を提供することが可能となる。
そのため、本発明によれば、強い還元力のあるフラックスを用いることや実装工程に窒素雰囲気条件下でのリフローを用いることなく、微小部品や微小ピッチの実装にも対応できる。
According to the present invention, even when a solder powder having a high solder melting point and a small average particle size is used, a solder powder that can provide a solder composition excellent in heat sagging property, meltability and storage stability, and It becomes possible to provide a solder composition and a printed wiring board using the above.
Therefore, according to the present invention, it is possible to support mounting of minute parts and minute pitches without using a flux having a strong reducing power and without using reflow under a nitrogen atmosphere condition in the mounting process.
まず、本発明のはんだ粉末について説明する。本発明のはんだ粉末は、以下説明する脂肪族モノカルボン酸または芳香族モノカルボン酸を、被処理はんだ粉末の表面に、付着させ、吸着させ、または、結合させてなることを特徴とするものである。 First, the solder powder of the present invention will be described. The solder powder of the present invention is characterized in that an aliphatic monocarboxylic acid or an aromatic monocarboxylic acid described below is attached to, adsorbed on, or bonded to the surface of the solder powder to be treated. is there.
本発明に用いる脂肪族モノカルボン酸または芳香族モノカルボン酸は、1分子中に1つ以上の水酸基を有するものであることが必要である。
前記脂肪族モノカルボン酸における炭化水素基の炭素数は、12以上20以下であることが好ましい。前記芳香族モノカルボン酸における炭化水素基の炭素数は、6以上であることが好ましく、6以上18以下であることがより好ましい。炭素数が前記下限未満では、はんだ粉末の酸化による物性の劣化を防止できない傾向にある。
The aliphatic monocarboxylic acid or aromatic monocarboxylic acid used in the present invention needs to have one or more hydroxyl groups in one molecule.
The hydrocarbon group in the aliphatic monocarboxylic acid preferably has 12 or more and 20 or less carbon atoms. The hydrocarbon group in the aromatic monocarboxylic acid preferably has 6 or more carbon atoms, and more preferably 6 to 18 carbon atoms. If the carbon number is less than the lower limit, deterioration of physical properties due to oxidation of the solder powder tends not to be prevented.
前記脂肪族モノカルボン酸としては、ヒドロキシエナント酸、ヒドロキシカプリン酸、ヒドロキシラウリル酸、ヒドロキシミリスチン酸、ヒドロキシペンタデシル酸、ヒドロキシパルミチン酸、ヒドロキシマルガリン酸、ヒドロキシステアリン酸などが挙げられる。
前記芳香族モノカルボン酸としては、ヒドロキシ安息香酸(4−ヒドロキシ安息香酸、サリチル酸など)、ジヒドロキシ安息香酸(2,4−ヒドロキシ安息香酸など)、ヒドロキシナフタレン酸、ジヒドロキシヒドロキシナフタレン酸などが挙げられる。
Examples of the aliphatic monocarboxylic acid include hydroxyenanthic acid, hydroxycapric acid, hydroxylauric acid, hydroxymyristic acid, hydroxypentadecyl acid, hydroxypalmitic acid, hydroxymargaric acid, and hydroxystearic acid.
Examples of the aromatic monocarboxylic acid include hydroxybenzoic acid (such as 4-hydroxybenzoic acid and salicylic acid), dihydroxybenzoic acid (such as 2,4-hydroxybenzoic acid), hydroxynaphthalene acid, and dihydroxyhydroxynaphthalene acid.
本発明に用いる被処理はんだ粉末は、無鉛のはんだ粉末(鉛フリーはんだ粉末)のみからなることが好ましいが、有鉛のはんだ粉末であってもよい。前記被処理はんだ粉末の融点は、200℃以上240℃以下であることが好ましく、210℃以上230℃以下であることがより好ましい。融点が前記範囲内の場合にも、本発明によれば、加熱ダレ性、溶融性および保存安定性が優れたはんだ組成物が得られる。また、融点が前記上限を超えると、リフロー温度が高くなりすぎる傾向にある。
この被処理はんだ粉末におけるはんだ合金としては、スズを主成分とする合金が好ましい。また、この合金の第二元素としては、銀、銅、亜鉛、ビスマス、アンチモンなどが挙げられる。さらに、この合金には、必要に応じて他の元素(第三元素以降)を添加してもよい。他の元素としては、銅、銀、ビスマス、アンチモン、アルミニウム、インジウム、ニッケル、コバルト、リン、ゲルマニウム、ガリウム、亜鉛などが挙げられる。
鉛フリーはんだ粉末の合金組成としては、特に限定されないが、Sn/Ag/Cu、Sn/Cu、Sn/Bi、Sn/Ag、Sn/Zn、Sn/Bi/Znなどが挙げられる。ここで、鉛フリーはんだ粉末とは、鉛を添加しないはんだ金属または合金の粉末のことをいう。ただし、鉛フリーはんだ粉末中に、不可避的不純物として鉛が存在することは許容されるが、この場合に、鉛の量は、500質量ppm以下であることが好ましい。
The solder powder to be treated used in the present invention is preferably composed only of lead-free solder powder (lead-free solder powder), but may be leaded solder powder. The melting point of the solder powder to be treated is preferably 200 ° C. or higher and 240 ° C. or lower, and more preferably 210 ° C. or higher and 230 ° C. or lower. Even in the case where the melting point is within the above range, according to the present invention, a solder composition having excellent heat sagging property, meltability and storage stability can be obtained. Moreover, when melting | fusing point exceeds the said upper limit, it exists in the tendency for reflow temperature to become high too much.
As the solder alloy in the solder powder to be treated, an alloy containing tin as a main component is preferable. Examples of the second element of the alloy include silver, copper, zinc, bismuth, and antimony. Furthermore, you may add another element (after 3rd element) to this alloy as needed. Examples of other elements include copper, silver, bismuth, antimony, aluminum, indium, nickel, cobalt, phosphorus, germanium, gallium, and zinc.
Although it does not specifically limit as an alloy composition of lead-free solder powder, Sn / Ag / Cu, Sn / Cu, Sn / Bi, Sn / Ag, Sn / Zn, Sn / Bi / Zn, etc. are mentioned. Here, the lead-free solder powder refers to a solder metal or alloy powder to which lead is not added. However, it is allowed that lead is present as an inevitable impurity in the lead-free solder powder. In this case, the amount of lead is preferably 500 ppm by mass or less.
前記被処理はんだ粉末の平均粒子径は、30μm以下であることが好ましく、1μm以上20μm以下であることがより好ましく、2μm以上10μm以下であることが特に好ましい。平均粒子径が上記範囲内であれば、ピッチの狭くなってきている最近の実装にも適用できる点で好ましい。なお、平均粒子径は、レーザー回折散乱法粒度分布測定装置により測定できる。 The average particle diameter of the solder powder to be treated is preferably 30 μm or less, more preferably 1 μm or more and 20 μm or less, and particularly preferably 2 μm or more and 10 μm or less. If the average particle diameter is within the above range, it is preferable in that it can be applied to recent mounting where the pitch is narrow. The average particle size can be measured with a laser diffraction / scattering particle size distribution analyzer.
前記脂肪族モノカルボン酸または前記芳香族モノカルボン酸を、前記被処理はんだ粉末の表面に、付着させ、吸着させ、または、結合させる方法としては、例えば、次のような方法を採用できる。
例えば、前記脂肪族モノカルボン酸または前記芳香族モノカルボン酸を含有する溶液を準備し、この溶液中に前記被処理はんだ粉末を浸漬し、その後、洗浄して乾燥することで、本発明のはんだ粉末を作製できる。なお、本発明のはんだ粉末の製造方法は、この方法に限定されない。
As a method for adhering, adsorbing, or bonding the aliphatic monocarboxylic acid or the aromatic monocarboxylic acid to the surface of the solder powder to be treated, for example, the following method can be employed.
For example, the solder of the present invention is prepared by preparing a solution containing the aliphatic monocarboxylic acid or the aromatic monocarboxylic acid, immersing the solder powder to be treated in the solution, and then washing and drying. A powder can be produced. In addition, the manufacturing method of the solder powder of this invention is not limited to this method.
前記溶液に用いる溶媒は、前記脂肪族モノカルボン酸または前記芳香族モノカルボン酸を溶解できるものであれば特に限定されない。このような溶媒としては、アルコール類などが挙げられる。
はんだ粉末の処理条件については、適宜設定することができ、特に限定されないが、例えば、前記溶液の濃度は、5質量%以上30質量%以下であることが好ましい。また、前記溶液の温度は、20℃以上80℃以下であることが好ましい。前記溶液への浸漬時間は、10分間以上5時間以下であることが好ましい。
The solvent used for the solution is not particularly limited as long as it can dissolve the aliphatic monocarboxylic acid or the aromatic monocarboxylic acid. Examples of such a solvent include alcohols.
The processing conditions for the solder powder can be set as appropriate and are not particularly limited. For example, the concentration of the solution is preferably 5% by mass or more and 30% by mass or less. Moreover, it is preferable that the temperature of the said solution is 20 degreeC or more and 80 degrees C or less. The immersion time in the solution is preferably 10 minutes or more and 5 hours or less.
次に、本発明のはんだ組成物について説明する。本発明のはんだ組成物は、以上説明したはんだ粉末と、ロジン系樹脂、活性剤、溶剤およびチクソ剤を含有するフラックスとを含有することを特徴とするものである。
前記はんだ粉末の配合量は、はんだ組成物100質量%に対して、80質量%以上95質量%以下であることが好ましい。はんだ粉末の配合量が80質量%未満の場合(フラックスの配合量が20質量%を超える場合)には、得られるはんだ組成物を用いた場合に、十分なはんだ接合を形成できにくくなる傾向にあり、他方、はんだ粉末の配合量が95質量%を超える場合(フラックスの配合量が5質量%未満の場合)には、バインダーとしてのフラックスが足りないため、フラックスとはんだ粉末とを混合しにくくなる傾向にある。
Next, the solder composition of the present invention will be described. The solder composition of the present invention is characterized by containing the above-described solder powder and a flux containing a rosin resin, an activator, a solvent and a thixotropic agent.
The blending amount of the solder powder is preferably 80% by mass or more and 95% by mass or less with respect to 100% by mass of the solder composition. When the amount of the solder powder is less than 80% by mass (when the amount of the flux exceeds 20% by mass), it tends to be difficult to form a sufficient solder joint when the obtained solder composition is used. On the other hand, when the blending amount of the solder powder exceeds 95% by mass (when the blending amount of the flux is less than 5% by mass), the flux as the binder is insufficient, and it is difficult to mix the flux and the solder powder. Tend to be.
本発明に用いるフラックスは、ロジン系樹脂、活性剤、溶剤およびチクソ剤を含有するものである。
本発明に用いるロジン系樹脂としては、天然ロジン(未変性ロジン)および変性ロジンが挙げられる。天然ロジンとしては、ガムロジン、トール油ロジン、ウッドロジンなどが挙げられる。変性ロジンとしては、重合ロジン、水素添加ロジン、ロジンエステル、ロジン変性樹脂などが挙げられる。これらのロジン系樹脂は1種を単独で用いてもよく、2種以上を混合して用いてもよい。
The flux used in the present invention contains a rosin resin, an activator, a solvent and a thixotropic agent.
Examples of the rosin resin used in the present invention include natural rosin (unmodified rosin) and modified rosin. Examples of natural rosin include gum rosin, tall oil rosin, and wood rosin. Examples of the modified rosin include polymerized rosin, hydrogenated rosin, rosin ester, and rosin modified resin. These rosin resins may be used alone or in combination of two or more.
前記ロジン系樹脂の配合量は、前記フラックス100質量%に対して、35質量%以上60質量%以下であることが好ましい。配合量が前記下限未満では、いわゆるはんだ付性が低下する傾向にあり、他方、前記上限を超えると、フラックス残さ量が多くなる傾向にある。 The blending amount of the rosin resin is preferably 35% by mass or more and 60% by mass or less with respect to 100% by mass of the flux. If the blending amount is less than the lower limit, so-called solderability tends to be lowered. On the other hand, if the blending amount exceeds the upper limit, the flux residual amount tends to increase.
本発明に用いる活性剤としては、有機酸、有機ハロゲン化合物、アミン系活性剤などが挙げられる。これらの活性剤は1種を単独で用いてもよく、2種以上を混合して用いてもよい。
前記有機酸としては、モノカルボン酸、ジカルボン酸などの他に、その他の有機酸が挙げられる。
モノカルボン酸としては、ギ酸、酢酸、プロピオン酸、ブチリック酸、バレリック酸、カプロン酸、エナント酸、カプリン酸、ラウリル酸、ミリスチン酸、ペンタデシル酸、パルミチン酸、マルガリン酸、ステアリン酸、ツベルクロステアリン酸、アラキジン酸、ベヘニン酸、リグノセリン酸、グリコール酸などが挙げられる。
ジカルボン酸としては、シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、ピメリン酸、スベリン酸、アゼライン酸、セバシン酸、フマル酸、マレイン酸、酒石酸、ジグリコール酸などが挙げられる。
その他の有機酸としては、ダイマー酸、レブリン酸、乳酸、アクリル酸、安息香酸、サリチル酸、アニス酸、クエン酸、ピコリン酸などが挙げられる。
Examples of the activator used in the present invention include organic acids, organic halogen compounds, and amine activators. These activators may be used individually by 1 type, and may mix and use 2 or more types.
Examples of the organic acid include other organic acids in addition to monocarboxylic acid and dicarboxylic acid.
Monocarboxylic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, caproic acid, enanthic acid, capric acid, lauric acid, myristic acid, pentadecylic acid, palmitic acid, margaric acid, stearic acid, tuberculostearic acid Arachidic acid, behenic acid, lignoceric acid, glycolic acid and the like.
Examples of the dicarboxylic acid include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, fumaric acid, maleic acid, tartaric acid, diglycolic acid and the like.
Examples of other organic acids include dimer acid, levulinic acid, lactic acid, acrylic acid, benzoic acid, salicylic acid, anisic acid, citric acid, and picolinic acid.
前記有機ハロゲン化合物としては、ジブロモブテンジオール、ジブロモコハク酸、5−ブロモ安息香酸、5−ブロモニコチン酸、5−ブロモフタル酸などが挙げられる。
前記アミン系活性剤としては、アミン類(エチレンジアミンなどのポリアミンなど)、アミン塩類(トリメチロールアミン、シクロヘキシルアミン、ジエチルアミンなどのアミンやアミノアルコールなどの有機酸塩や無機酸塩(塩酸、硫酸、臭化水素酸など))、アミノ酸類(グリシン、アラニン、アスパラギン酸、グルタミン酸、バリンなど)、アミド系化合物などが挙げられる。
Examples of the organic halogen compound include dibromobutenediol, dibromosuccinic acid, 5-bromobenzoic acid, 5-bromonicotinic acid, and 5-bromophthalic acid.
Examples of the amine activator include amines (polyamines such as ethylenediamine), amine salts (amines such as trimethylolamine, cyclohexylamine, diethylamine, and organic acid salts such as amino alcohols and inorganic acid salts (hydrochloric acid, sulfuric acid, odors). Hydroacid, etc.)), amino acids (glycine, alanine, aspartic acid, glutamic acid, valine, etc.), amide compounds and the like.
前記活性剤の配合量は、フラックス100質量%に対して、0.5質量%以上20質量%以下であることが好ましい。配合量が前記下限未満では、はんだボールが生じやすくなる傾向にあり、他方、前記上限を超えると、絶縁性が低下する傾向にある。 The blending amount of the activator is preferably 0.5% by mass or more and 20% by mass or less with respect to 100% by mass of the flux. If the blending amount is less than the lower limit, solder balls tend to be easily formed. On the other hand, if the blending amount exceeds the upper limit, the insulating property tends to decrease.
本発明に用いる溶剤としては、ジエチレングリコール、ジプロピレングリコール、トリエチレングリコール、ヘキシレングリコール、ヘキシルジグリコール、1,5−ペンタンジオール、メチルカルビトール、ブチルカルビトール、2−エチルヘキシルジグリコール、オクタンジオール、フェニルグリコールが挙げられる。これらの溶剤は1種を単独で用いてもよく、2種以上を混合して用いてもよい。 Examples of the solvent used in the present invention include diethylene glycol, dipropylene glycol, triethylene glycol, hexylene glycol, hexyl diglycol, 1,5-pentanediol, methyl carbitol, butyl carbitol, 2-ethylhexyl diglycol, octane diol, Phenyl glycol is mentioned. These solvents may be used alone or in combination of two or more.
前記溶剤の配合量は、フラックス100質量%に対して、25質量%以上60質量%以下であることが好ましい。配合量が前記範囲内であれば、得られるはんだ組成物の粘度を適正な範囲に適宜調整できる。 The amount of the solvent is preferably 25% by mass or more and 60% by mass or less with respect to 100% by mass of the flux. If the blending amount is within the above range, the viscosity of the obtained solder composition can be appropriately adjusted to an appropriate range.
本発明に用いるチクソ剤としては、硬化ひまし油、アミド類、カオリン、コロイダルシリカ、有機ベントナイト、ガラスフリットなどが挙げられる。これらの中でも、本発明のはんだ粉末の表面との相互作用の観点から、アミド類が好ましい。これらのチクソ剤は1種を単独で用いてもよく、2種以上を混合して用いてもよい。 Examples of the thixotropic agent used in the present invention include hardened castor oil, amides, kaolin, colloidal silica, organic bentonite, and glass frit. Among these, amides are preferable from the viewpoint of interaction with the surface of the solder powder of the present invention. These thixotropic agents may be used alone or in combination of two or more.
前記チクソ剤の配合量は、前記フラックス100質量%に対して、1質量%以上10質量%以下であることが好ましい。配合量が前記下限未満では、チクソ性が得られず、ダレが生じやすくなる傾向にあり、他方、前記上限を超えると、チクソ性が高すぎて、塗布不良となりやすい傾向にある。 The amount of the thixotropic agent is preferably 1% by mass or more and 10% by mass or less with respect to 100% by mass of the flux. If the blending amount is less than the lower limit, thixotropy cannot be obtained and the sagging tends to occur. On the other hand, if the amount exceeds the upper limit, the thixotropy tends to be too high and the coating tends to be poor.
本発明に用いるフラックスには、前記ロジン系樹脂、前記活性剤、前記溶剤および前記チクソ剤の他に、必要に応じて、添加剤を加えることができる。添加剤としては、つや消し剤、発泡剤、消泡剤などが挙げられる。これらの添加剤の配合量は、フラックス100質量%に対して、0.1質量%以上10質量%以下であることが好ましく、0.5質量%以上5質量%以下であることがより好ましい。 In addition to the rosin resin, the activator, the solvent, and the thixotropic agent, an additive may be added to the flux used in the present invention as necessary. Examples of the additive include a matting agent, a foaming agent, and an antifoaming agent. The blending amount of these additives is preferably 0.1% by mass or more and 10% by mass or less, and more preferably 0.5% by mass or more and 5% by mass or less with respect to 100% by mass of the flux.
次に、本発明のプリント配線基板について説明する。本発明のプリント配線基板は、以上説明したはんだ組成物を用いて電子部品をプリント配線基板に実装したことを特徴とするものである。そのため、本発明のプリント配線基板は、微小部品や微小ピッチの実装にも対応できる。 Next, the printed wiring board of the present invention will be described. The printed wiring board of the present invention is characterized in that an electronic component is mounted on a printed wiring board using the solder composition described above. Therefore, the printed wiring board of the present invention can also be used for mounting of minute parts and minute pitches.
ここで用いる塗布装置としては、メタルマスク印刷機、スクリーン印刷機、ディスペンサー、ジェットディスペンサーなどが挙げられる。
はんだ付け方法としては、リフロー炉による方法以外に、レーザー光源を用いる方法を採用してもよい。
本発明のはんだ組成物についてはその残渣膜は洗浄することなく、電子部品を搭載した配線基板に被覆されたままにしてもよい。
Examples of the coating apparatus used here include a metal mask printing machine, a screen printing machine, a dispenser, and a jet dispenser.
As a soldering method, a method using a laser light source may be adopted in addition to a method using a reflow furnace.
About the solder composition of this invention, you may leave the residue film | membrane covered with the wiring board carrying an electronic component, without wash | cleaning.
なお、本発明は前記実施形態に限定されるものではなく、本発明の目的を達成できる範囲での変形、改良などは本発明に含まれるものである。
例えば、前記実施形態においては、はんだ組成物のフラックスとして、ロジン系樹脂をベース樹脂とするものを用いたが、これに限定されない。例えば、前記フラックスのベース樹脂として、アクリル系樹脂、エポキシ系樹脂などを用いてもよい。この場合、ベース樹脂に併せて、フラックスの組成を適宜調整すればよい。
。
It should be noted that the present invention is not limited to the above-described embodiment, and modifications, improvements and the like within a scope that can achieve the object of the present invention are included in the present invention.
For example, in the above embodiment, the solder composition flux using a rosin resin as a base resin is not limited to this. For example, an acrylic resin or an epoxy resin may be used as the base resin for the flux. In this case, the composition of the flux may be adjusted as appropriate in accordance with the base resin.
.
次に、本発明を実施例および比較例によりさらに詳細に説明するが、本発明はこれらの例によってなんら限定されるものではない。
<はんだ粉末の作製>
[実施例1−1]
12−ヒドロキシステアリン酸150g、および工業用エタノール1000mLをフラスコへ入れ、50℃に加熱し、窒素雰囲気条件下にて150rpmの回転数で撹拌し、12−ヒドロキシステアリン酸を溶解させて、表面処理液を得た。この表面処理液中に、はんだ粉末(合金組成:Sn−3.0Ag−0.5Cu、平均粒子径:20.5μm、粒径分布:14〜27μm、はんだ融点:217〜220℃)1000gを投入し、3時間撹拌した。撹拌終了後のはんだ粉末をイソプロピルアルコールで洗浄しながら、吸引ろ過した後に、70℃空気乾燥オーブンで乾燥させて、表面処理はんだ粉末を得た。
EXAMPLES Next, although an Example and a comparative example demonstrate this invention further in detail, this invention is not limited at all by these examples.
<Preparation of solder powder>
[Example 1-1]
A surface treatment solution is prepared by adding 150 g of 12-hydroxystearic acid and 1000 mL of industrial ethanol to a flask, heating to 50 ° C., stirring at a rotation speed of 150 rpm under nitrogen atmosphere conditions, and dissolving 12-hydroxystearic acid. Got. 1000 g of solder powder (alloy composition: Sn-3.0Ag-0.5Cu, average particle size: 20.5 μm, particle size distribution: 14 to 27 μm, solder melting point: 217 to 220 ° C.) is introduced into this surface treatment solution. And stirred for 3 hours. The solder powder after stirring was suction filtered while being washed with isopropyl alcohol, and then dried in an air drying oven at 70 ° C. to obtain a surface-treated solder powder.
[実施例1−2]
12−ヒドロキシステアリン酸に代えて、4−ヒドロキシ安息香酸を用いた以外は、実施例1−1と同様にして、表面処理はんだ粉末を得た。
[実施例1−3]
12−ヒドロキシステアリン酸に代えて、2,4−ジヒドロキシ安息香酸を用いた以外は、実施例1−1と同様にして、表面処理はんだ粉末を得た。
[Example 1-2]
A surface-treated solder powder was obtained in the same manner as in Example 1-1 except that 4-hydroxybenzoic acid was used in place of 12-hydroxystearic acid.
[Example 1-3]
A surface-treated solder powder was obtained in the same manner as in Example 1-1 except that 2,4-dihydroxybenzoic acid was used in place of 12-hydroxystearic acid.
[比較例1−1]
12−ヒドロキシステアリン酸に代えて、ステアリン酸を用いた以外は、実施例1−1と同様にして、表面処理はんだ粉末を得た。
[比較例1−2]
12−ヒドロキシステアリン酸に代えて、安息香酸を用いた以外は、実施例1−1と同様にして、表面処理はんだ粉末を得た。
[比較例1−3]
12−ヒドロキシステアリン酸に代えて、アジピン酸を用いた以外は、実施例1−1と同様にして、表面処理はんだ粉末を得た。
[Comparative Example 1-1]
A surface-treated solder powder was obtained in the same manner as in Example 1-1 except that stearic acid was used instead of 12-hydroxystearic acid.
[Comparative Example 1-2]
A surface-treated solder powder was obtained in the same manner as Example 1-1 except that benzoic acid was used instead of 12-hydroxystearic acid.
[Comparative Example 1-3]
A surface-treated solder powder was obtained in the same manner as in Example 1-1 except that adipic acid was used in place of 12-hydroxystearic acid.
[比較例1−4]
オクタデシルトリメトキシシラン5g、エタノール450g、水0.5gを取り、室温で30分間撹拌してシラン化合物を加水分解した。その後、はんだ粉末(合金組成:Sn−3.0Ag−0.5Cu、平均粒子径:20.5μm、粒径分布:14〜27μm、はんだ融点:217〜220℃)1000gを加え、45℃で3時間反応させ、反応終了後減圧にしてエタノールと水を除去して、表面処理はんだ粉末を得た。
[比較例1−5]
リン酸系アニオン界面活性剤としてDDP2(日光ケミカルズ社製)10mL、ヘプタンを1000mL、はんだ粉末(合金組成:Sn−3.0Ag−0.5Cu、平均粒子径:20.5μm、粒径分布:14〜27μm、はんだ融点:217〜220℃)1000gをビーカーに入れ、マグネットスターラで約800rpmで15分間撹拌する。さらに、溶液とはんだ粉末を分別し、ヘプタンではんだ粉末を15分間洗浄し、はんだ粉末を60℃に保った炉で30分乾燥することにより、表面処理はんだ粉末を得た。
[Comparative Example 1-4]
5 g of octadecyltrimethoxysilane, 450 g of ethanol and 0.5 g of water were taken and stirred at room temperature for 30 minutes to hydrolyze the silane compound. Thereafter, 1000 g of solder powder (alloy composition: Sn-3.0Ag-0.5Cu, average particle size: 20.5 μm, particle size distribution: 14 to 27 μm, solder melting point: 217 to 220 ° C.) is added, and 3 at 45 ° C. Reaction was performed for a time, and after completion of the reaction, the pressure was reduced and ethanol and water were removed to obtain a surface-treated solder powder.
[Comparative Example 1-5]
DDP2 (manufactured by Nikko Chemicals) as a phosphate anionic surfactant 10 mL, heptane 1000 mL, solder powder (alloy composition: Sn-3.0Ag-0.5Cu, average particle size: 20.5 μm, particle size distribution: 14 (-27 μm, solder melting point: 217-220 ° C.) is put in a beaker and stirred with a magnetic stirrer at about 800 rpm for 15 minutes. Furthermore, the solution and the solder powder were separated, the solder powder was washed with heptane for 15 minutes, and dried in a furnace kept at 60 ° C. for 30 minutes, thereby obtaining a surface-treated solder powder.
<はんだ組成物の作製>
[実施例2−1]
ロジン系樹脂(商品名「KE−604」、荒川化学工業社製)45質量部、活性剤A(商品名「SL−12」、岡村製油社製)10質量部、活性剤B(商品名「UNIDYME14」、丸善油化商事社製)5質量部、溶剤(2−エチルヘキシルジグリコール、日本乳化剤社製)35質量部、およびチクソ剤(商品名「スリパックスZHH」、日本化成社製)5質量部を容器に投入し、らいかい機を用いて混合してフラックスを得た。
その後、得られたフラックス12質量%、および実施例1−1で得られた表面処理はんだ粉末88質量%を容器に投入し、混練機にて2時間混合することではんだ組成物を得た。
<Preparation of solder composition>
[Example 2-1]
45 parts by mass of rosin resin (trade name “KE-604”, manufactured by Arakawa Chemical Industries), 10 parts by mass of activator A (trade name “SL-12”, manufactured by Okamura Oil Co., Ltd.), activator B (trade name “ UNIDYME14 "(manufactured by Maruzen Oil Chemicals Co., Ltd.) 5 parts by mass, solvent (2-ethylhexyl diglycol, manufactured by Nippon Emulsifier Co., Ltd.) 35 parts by mass, and thixotropic agent (trade name" Sripacs ZHH ", manufactured by Nippon Kasei Co., Ltd.) Was put into a container and mixed using a rough machine to obtain a flux.
Thereafter, 12% by mass of the obtained flux and 88% by mass of the surface-treated solder powder obtained in Example 1-1 were put into a container and mixed for 2 hours with a kneader to obtain a solder composition.
[実施例2−2]
実施例1−1で得られた表面処理はんだ粉末に代えて、実施例1−2で得られた表面処理はんだ粉末(合金組成:Sn−3.0Ag−0.5Cu、平均粒子径:20.5μm、粒径分布:14〜27μm、はんだ融点:217〜220℃)を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[実施例2−3]
実施例1−1で得られた表面処理はんだ粉末に代えて、実施例1−3で得られた表面処理はんだ粉末を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[Example 2-2]
Instead of the surface-treated solder powder obtained in Example 1-1, the surface-treated solder powder obtained in Example 1-2 (alloy composition: Sn-3.0Ag-0.5Cu, average particle size: 20. A solder composition was obtained in the same manner as in Example 2-1, except that 5 μm, particle size distribution: 14 to 27 μm, solder melting point: 217 to 220 ° C. were used.
[Example 2-3]
A solder composition was obtained in the same manner as in Example 2-1, except that the surface-treated solder powder obtained in Example 1-3 was used instead of the surface-treated solder powder obtained in Example 1-1. It was.
[比較例2−1]
実施例1−1で得られた表面処理はんだ粉末に代えて、表面処理が施されていないはんだ粉末を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[比較例2−2]
実施例1−1で得られた表面処理はんだ粉末に代えて、比較例1−1で得られた表面処理はんだ粉末を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[比較例2−3]
実施例1−1で得られた表面処理はんだ粉末に代えて、比較例1−2で得られた表面処理はんだ粉末を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[比較例2−4]
実施例1−1で得られた表面処理はんだ粉末に代えて、比較例1−3で得られた表面処理はんだ粉末を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[比較例2−5]
実施例1−1で得られた表面処理はんだ粉末に代えて、比較例1−4で得られた表面処理はんだ粉末を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[比較例2−6]
実施例1−1で得られた表面処理はんだ粉末に代えて、比較例1−5で得られた表面処理はんだ粉末を用いた以外は実施例2−1と同様にして、はんだ組成物を得た。
[Comparative Example 2-1]
Instead of the surface-treated solder powder obtained in Example 1-1, a solder composition was obtained in the same manner as in Example 2-1, except that a solder powder not subjected to surface treatment was used.
[Comparative Example 2-2]
A solder composition was obtained in the same manner as in Example 2-1, except that the surface-treated solder powder obtained in Comparative Example 1-1 was used instead of the surface-treated solder powder obtained in Example 1-1. It was.
[Comparative Example 2-3]
A solder composition was obtained in the same manner as in Example 2-1, except that the surface-treated solder powder obtained in Comparative Example 1-2 was used instead of the surface-treated solder powder obtained in Example 1-1. It was.
[Comparative Example 2-4]
A solder composition was obtained in the same manner as in Example 2-1, except that the surface-treated solder powder obtained in Comparative Example 1-3 was used instead of the surface-treated solder powder obtained in Example 1-1. It was.
[Comparative Example 2-5]
A solder composition was obtained in the same manner as in Example 2-1, except that the surface-treated solder powder obtained in Comparative Example 1-4 was used instead of the surface-treated solder powder obtained in Example 1-1. It was.
[Comparative Example 2-6]
A solder composition was obtained in the same manner as in Example 2-1, except that the surface-treated solder powder obtained in Comparative Example 1-5 was used instead of the surface-treated solder powder obtained in Example 1-1. It was.
[比較例2−7]
実施例2−1で得られたフラックスに、さらに、4−ヒドロキシ安息香酸2質量部を添加し混合して、フラックスを得た。
その後、得られたフラックス12質量%、および表面処理が施されていないはんだ粉末(合金組成:Sn−3.0Ag−0.5Cu、平均粒子径:20.5μm、粒径分布:14〜27μm、はんだ融点:217〜220℃)88質量%を容器に投入し、混練機にて2時間混合することではんだ組成物を得た。
[比較例2−8]
実施例2−1で得られたフラックスに、さらに、4−ヒドロキシ安息香酸10質量部を添加し混合して、フラックスを得た。
その後、得られたフラックス12質量%、および表面処理をしていないはんだ粉末(合金組成:Sn−3.0Ag−0.5Cu、平均粒子径:20.5μm、粒径分布:14〜27μm、はんだ融点:217〜220℃)88質量%を容器に投入し、混練機にて2時間混合することではんだ組成物を得た。
[Comparative Example 2-7]
To the flux obtained in Example 2-1, 2 parts by mass of 4-hydroxybenzoic acid was further added and mixed to obtain a flux.
Thereafter, 12 mass% of the obtained flux and solder powder not subjected to surface treatment (alloy composition: Sn-3.0Ag-0.5Cu, average particle size: 20.5 μm, particle size distribution: 14 to 27 μm, Solder melting point: 217 to 220 ° C.) 88% by mass was put into a container and mixed for 2 hours in a kneader to obtain a solder composition.
[Comparative Example 2-8]
To the flux obtained in Example 2-1, 10 parts by mass of 4-hydroxybenzoic acid was further added and mixed to obtain a flux.
Thereafter, the obtained flux of 12% by mass and solder powder not subjected to surface treatment (alloy composition: Sn-3.0Ag-0.5Cu, average particle size: 20.5 μm, particle size distribution: 14 to 27 μm, solder (Melting point: 217-220 ° C.) 88% by mass was put into a container and mixed for 2 hours in a kneader to obtain a solder composition.
<はんだ粉末およびはんだ組成物の評価>
はんだ粉末およびはんだ組成物の評価(溶融性、加熱ダレ性)を以下のような方法で行った。得られた結果を表1に示す。また、各例で表面処理に用いた物質およびフラックスへの添加成分を表1に示す。
(1)溶融性(はんだ粉末劣化後の溶融性試験)
はんだ粉末30gを50mLの容器に取りわけ、ゴミなど不純物が入らないように容器の空き口を不繊紙で覆い、40℃90RH%に設定維持された恒温恒湿槽に72時間放置する。その後、実施例および比較例の操作に従ってはんだ組成物を作製し、試験するはんだ組成物を直径φ6.5mmの円形パターンのメタルマスクを用いて、セラミックス板に印刷し、270℃に設定されたホットプレート上で10秒間加熱し、はんだ組成物を溶融させる。冷却後に、印刷範囲内において溶融しなかったはんだ粉末のボール(はんだボール)を観察する。はんだボールがない場合は溶融性「良」と判定する。はんだボールが残っている場合は溶融性「不良」と判定する。
<Evaluation of solder powder and solder composition>
The solder powder and solder composition were evaluated (melting property and heat sagging property) by the following methods. The obtained results are shown in Table 1. Table 1 shows the substances used for the surface treatment in each example and the components added to the flux.
(1) Meltability (meltability test after solder powder deterioration)
Dispose 30 g of solder powder in a 50 mL container, cover the open mouth of the container with non-woven paper so that impurities such as dust do not enter, and leave it in a constant temperature and humidity chamber maintained at 40 ° C. and 90 RH% for 72 hours. Thereafter, a solder composition was prepared according to the operations of the examples and comparative examples, and the solder composition to be tested was printed on a ceramic plate using a circular pattern metal mask having a diameter of 6.5 mm, and a hot temperature set at 270 ° C. Heat on the plate for 10 seconds to melt the solder composition. After cooling, the solder powder balls (solder balls) that did not melt in the printing range are observed. When there is no solder ball, it is determined that the meltability is “good”. When the solder ball remains, it is determined that the meltability is “bad”.
(2)加熱ダレ性
JIS Z 3284 附属書7の方法と同じ印刷パターン(3.0mm×0.7mmのパターン孔を有し、それを0.2mmから1.2mmまで0.1mmステップで配置しているパターン孔を有する印刷パターン)のメタルマスクを使用し、セラミック基板上にはんだ組成物を印刷して試験板とする。そして、170℃に加熱された炉中に試験板を入れ、1分間加熱する。加熱後の試験板を観察し、パターン孔のうち、印刷されたはんだ組成物が一体にならない最小間隔を測定する。
なお、はんだ組成物の用途によって、はんだ粉末の粒子径、フラックス中のチクソ剤配合量、はんだ組成物中のフラックスの配合量などは適宜調整でき、実際の製品で使用される加熱ダレ性の範囲は、実際の製品で使用できる範囲に適宜調整できる。本試験では、はんだ粉末の表面処理の効果を明確にするために、実施例および比較例ともにフラックスの配合量を同じにし、表面処理を施していないはんだ粉末を用いた場合との優劣を評価している。
(2) Heat sagging property JIS Z 3284 The same printed pattern as the method of Annex 7 (having a pattern hole of 3.0 mm x 0.7 mm, and arranging it in steps of 0.1 mm from 0.2 mm to 1.2 mm. A printed pattern having a pattern hole) is used to print a solder composition on a ceramic substrate to obtain a test plate. Then, the test plate is placed in a furnace heated to 170 ° C. and heated for 1 minute. The test plate after heating is observed, and the minimum interval at which the printed solder composition is not integrated is measured among the pattern holes.
Depending on the application of the solder composition, the particle size of the solder powder, the amount of the thixotropic agent in the flux, the amount of the flux in the solder composition, etc. can be adjusted as appropriate, and the range of heat sagability used in actual products Can be appropriately adjusted within the range that can be used in actual products. In this test, in order to clarify the effect of the surface treatment of the solder powder, the blending amount of the flux was made the same in both the examples and comparative examples, and the superiority or inferiority compared to the case of using the solder powder not subjected to the surface treatment was evaluated. ing.
表1に示す結果からも明らかなように、本発明のはんだ粉末を用いたはんだ組成物(実施例2−1〜2−3)については、はんだ融点が217〜220℃と高く、平均粒子径が20.5μmと小さいはんだ粉末を用いた場合にも、加熱ダレ性および溶融性が優れていることが確認された。また、これらのはんだ組成物は、フラックス中の還元成分量が適正なために保存安定性も優れている。
一方で、表面処理を施していないはんだ粉末を用いた場合(比較例2−1)には、酸化劣化に対して耐性は無い。その結果、はんだ粉末劣化後の溶融性試験では「不良」となり、加熱ダレ性も0.5mmと悪いことが分かった。
As is apparent from the results shown in Table 1, the solder composition using the solder powder of the present invention (Examples 2-1 to 2-3) has a high solder melting point of 217 to 220 ° C. and an average particle diameter. Even when a solder powder as small as 20.5 μm was used, it was confirmed that the heat sagging property and the meltability were excellent. These solder compositions are also excellent in storage stability because the amount of reducing component in the flux is appropriate.
On the other hand, when solder powder that has not been subjected to surface treatment is used (Comparative Example 2-1), there is no resistance to oxidative degradation. As a result, it was found that the meltability test after deterioration of the solder powder was “bad”, and the heat sagging property was also bad at 0.5 mm.
また、はんだ粉末の表面にステアリン酸、安息香酸、アジピン酸、オクタデシルトリメトキシシランまたはリン酸系アニオン界面活性剤を、付着または吸着または結合のいずれかの状態としたはんだ粉末を用いた場合(比較例2−2〜2−6)では、加熱ダレ性が表面処理を施していないはんだ粉末を用いた場合と同様に0.5mm〜0.7mmと悪いことが分かった。なお、はんだ粉末劣化後の溶融性試験の結果は「良」であり、表面処理を施すことがはんだ粉末の劣化に対して有効であることが分かる。なお、このように表面処理の種類によっては加熱ダレ性が向上しない理由は、次のような理由であると本発明者は推察する。すなわち、はんだ粉末の表面に炭化水素有機化合物などによる表面処理膜が形成されても、フラックス成分中のカルボン酸やアルコール溶媒やチクソ剤などの水酸基やアミノ基などと、水素結合の相互作用などは無く、何も処理を行っていないはんだ粉末と同じような状況下にあるためと本発明者は推察する。 Also, when using solder powder with stearic acid, benzoic acid, adipic acid, octadecyltrimethoxysilane, or phosphate anionic surfactant attached or adsorbed or bonded to the surface of the solder powder (comparison) In Examples 2-2 to 2-6), it was found that the heat sagging property was as bad as 0.5 mm to 0.7 mm as in the case of using the solder powder not subjected to the surface treatment. In addition, the result of the meltability test after the solder powder deterioration is “good”, and it can be seen that the surface treatment is effective for the deterioration of the solder powder. In addition, this inventor presumes that the reason why heating sag does not improve depending on the type of surface treatment is as follows. In other words, even if a surface treatment film made of hydrocarbon organic compounds is formed on the surface of the solder powder, the interaction between hydrogen bonds and hydroxyl groups and amino groups such as carboxylic acid, alcohol solvent and thixotropic agent in the flux component The present inventors infer that it is in the same situation as the solder powder that is not processed at all.
また、表面処理を施していないはんだ粉末を用い、フラックス中に4−ヒドロキシ安息香酸を添加した場合(比較例2−7および2−8)でも、はんだ粉末劣化後の溶融性試験では「不良」となり、加熱ダレ性も0.5mmと悪いことが分かった。このような結果となった理由は、次のような理由であると本発明者は推察する。すなわち、4−ヒドロキシ安息香酸は、はんだ粉末の表面に付着または吸着または結合のいずれかの状態にはないので、予めはんだ粉末の酸化劣化を抑制するものでもないし、酸化劣化したはんだ粉末表面を還元する能力も高くない。そのため、はんだ粉末劣化後の溶融性試験では「不良」となる。また、はんだ粉末の表面とフラックス成分との間の相互作用なども無いため、加熱ダレ性も向上しないと本発明者は推察する。 Further, even when solder powder not subjected to surface treatment is used and 4-hydroxybenzoic acid is added to the flux (Comparative Examples 2-7 and 2-8), it is “bad” in the meltability test after deterioration of the solder powder. Thus, it was found that the heat sagging property was also as bad as 0.5 mm. The inventor infers that the reason for this result is as follows. That is, 4-hydroxybenzoic acid is not attached to, or adsorbed to, or bonded to the surface of the solder powder, so it does not suppress the oxidative deterioration of the solder powder in advance, and reduces the oxidatively deteriorated solder powder surface. The ability to do is not high. Therefore, it becomes “defective” in the meltability test after solder powder deterioration. Moreover, since there is no interaction between the surface of the solder powder and the flux component, the inventor infers that the heat sag does not improve.
本発明のはんだ粉末およびはんだ組成物は、電子機器のプリント配線基板に部品を実装するための技術として好適に用いることができる。 The solder powder and the solder composition of the present invention can be suitably used as a technique for mounting a component on a printed wiring board of an electronic device.
Claims (7)
前記脂肪族モノカルボン酸における炭化水素基の炭素数が、12以上20以下である
ことを特徴とするはんだ粉末。 The solder powder according to claim 1,
The solder powder, wherein the hydrocarbon group in the aliphatic monocarboxylic acid has 12 to 20 carbon atoms.
前記芳香族モノカルボン酸における炭化水素基の炭素数が、6以上である
ことを特徴とするはんだ粉末。 In the solder powder according to claim 1 or 2,
The solder powder, wherein the hydrocarbon group in the aromatic monocarboxylic acid has 6 or more carbon atoms.
前記被処理はんだ粉末の平均粒子径が、30μm以下である
ことを特徴とするはんだ粉末。 In the solder powder according to any one of claims 1 to 3,
The solder powder, wherein the solder powder to be treated has an average particle size of 30 μm or less.
前記被処理はんだ粉末の融点が、200℃以上である
ことを特徴とするはんだ粉末。 In the solder powder according to any one of claims 1 to 4,
Solder powder, wherein the solder powder to be treated has a melting point of 200 ° C. or higher.
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JP2017064784A (en) * | 2015-09-30 | 2017-04-06 | 株式会社タムラ製作所 | Solder composition and electronic substrate |
CN112719689A (en) * | 2019-10-28 | 2021-04-30 | 松下知识产权经营株式会社 | Solder paste and bonded structure |
JP7500013B2 (en) | 2020-04-08 | 2024-06-17 | 石川技研株式会社 | Printed Wiring Boards |
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