JP2014134458A - Current sensor - Google Patents

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Publication number
JP2014134458A
JP2014134458A JP2013002773A JP2013002773A JP2014134458A JP 2014134458 A JP2014134458 A JP 2014134458A JP 2013002773 A JP2013002773 A JP 2013002773A JP 2013002773 A JP2013002773 A JP 2013002773A JP 2014134458 A JP2014134458 A JP 2014134458A
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current path
current
magnetic
magnetic shield
magnetoelectric conversion
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JP2013002773A
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Japanese (ja)
Inventor
Takeshi Chiba
健 千葉
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Alps Green Devices Co Ltd
アルプス・グリーンデバイス株式会社
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Abstract

An object of the present invention is to provide a current sensor capable of reducing the weight of a magnetic shield member to a minimum.
A current sensor (101) has a first current path (12a) and a second current path (12b) electrically connected to the first current path (12a) arranged in parallel. A magnetic shield member (15) having a rectangular section (15P) surrounding the current path (12), the first current path (12a) and the second current path (12b); and the magnetic shield member (15). And a first magnetoelectric conversion element (13A) that detects a magnetic field generated when a current flows through the current path (12), and includes a first current path (12a) and a second current. On the path (12b), the same current flows in the opposite direction, and in the cross section orthogonal to the direction in which the current flows, the thickness of the four corner regions of the cylindrical portion (15P) is compared to the other regions. It is characterized by being thick and thick.
[Selection] Figure 4

Description

  The present invention relates to a current sensor that detects a magnetic field generated when a current flows and measures a current flowing in a current path.

  In recent years, in order to control and monitor various devices, current sensors that are attached to various devices and measure currents flowing through the various devices have been generally used. As this type of current sensor, a current sensor using a magnetoelectric conversion element such as a magnetoresistive effect element or a Hall element that senses a magnetic field generated from a current to be measured flowing in a current path is well known. In order to improve the measurement accuracy of the current sensor, a current sensor including a magnetic shield member that reduces the influence of an external magnetic field is well known.

  As the above-described current sensor, Patent Document 1 (conventional example) discloses a current sensor 800 as shown in FIG. FIG. 18 is a diagram showing an outline of the configuration of a conventional current sensor 800. As shown in FIG. 18, the current sensor 800 of the conventional example includes a parallel measurement portion in which a part of the same wiring is arranged in parallel so that currents to be measured flow in opposite directions. (Current bar) 802, magnetic detection means (magnetic sensor) 803 for detecting a magnetic field in a direction perpendicular to a plane formed by parallel wires, and a magnetic field detected by magnetic detection means (magnetic sensor) 803 The current detecting means (coil) 804 for detecting the current flowing through the current measurement wiring (current bar) 802 and the magnetic core 805 surrounding the parallel arrangement portion are configured. The magnetic core 805 reinforces the magnetic field generated by the current flowing through the current measurement wiring (current bar) 802 and detects that the external magnetic field is detected by the magnetic detection means (magnetic sensor) 803. It also has the function of a magnetic shield that shields the external magnetic field so as to suppress it. Thus, it is possible to provide a highly reliable current sensor 800 that suppresses erroneous detection of external magnetic noise at low cost.

  On the other hand, in order to make the current sensor inexpensive, a current sensor 900 (shown in FIG. 19) using a magnetic shield member 905 having only a magnetic shield function without using the magnetic core 805 as in the conventional example. Conceivable. FIG. 19 shows a current sensor 900 of a comparative example, in which a magnetic shield member 905 is manufactured by bending, for example, a silicon steel plate having a high magnetic permeability. In the current sensor 900 shown in FIG. 19, the current flows through the current paths 902a and 902b and the current paths (902a and 902b) arranged in parallel so that the currents to be measured flow in opposite directions. A magnetoelectric conversion element 903 that detects a magnetic field that is sometimes generated, and a magnetic shield member 905 that surrounds the current path 902a and the current path 902b and the magnetoelectric conversion element 903 are configured. Thereby, the magnetic shield member 905 is manufactured by an inexpensive method, and the current sensor 900 capable of reducing the influence of the external magnetic field is obtained by the magnetic shield member 905.

JP 2010-276422 A

  When the magnetic shield member 905 surrounding the current path (902a, 902b) is provided as in the comparative example described above, the magnetic field generated from the current path (902a, 902b) converges on the magnetic shield member 905, and the magnetic field is As it grows, it becomes magnetically saturated at a certain point. When the magnetic saturation occurs, the effect of shielding the external magnetic field is rapidly reduced.

  However, in the magnetic shield member 905 as in the comparative example, the distribution of the magnetic flux density in the magnetic shield member 905 is not uniform, and in particular, the magnetic flux in the P portion shown in FIG. There is a concentration of density. For this reason, there is a problem that magnetic saturation occurs in these four corner regions and the magnetic shielding effect is lowered. In order to solve this problem, it is necessary to increase the thickness of the magnetic shield member 905, and it is necessary to use a thick magnetic shield member like the magnetic core 805 of the conventional example.

  The present invention solves the above-described problems, and an object thereof is to provide a current sensor that can reduce the weight of a magnetic shield member to a minimum.

  In order to solve this problem, the current sensor of the present invention includes a current path in which a first current path and a second current path electrically connected to the first current path are arranged in parallel; A magnetic shield member having a cylindrical section having a quadrangular cross section surrounding the first current path and the second current path, and provided in a region surrounded by the magnetic shield member, and is generated when a current flows through the current path. A cross section orthogonal to the direction in which the same current flows in the reverse direction and the current flows in the first current path and the second current path. In the above, the thickness of the four corner regions of the cylindrical portion is thicker than that of the other regions.

  According to this, in the current sensor of the present invention, in the cross section of the cylindrical portion of the magnetic shield member, the thickness of the four corner areas of the cross section is thicker than the other areas. Concentration can be avoided, and the magnetic flux density distribution in the magnetic shield member can be made substantially uniform. Thereby, the thickness of the magnetic shield member can be designed to be thinner, and the weight of the magnetic shield member can be reduced to the minimum.

  The current sensor of the present invention includes a current path in which a first current path and a second current path electrically connected to the first current path are arranged in parallel, the first current path, A magnetic shield member having a cylindrical portion surrounding the second current path, and a first magnetoelectric conversion provided in a region surrounded by the magnetic shield member and detecting a magnetic field generated when a current flows in the current path A current of the same magnitude flows in the first current path and the second current path, and the thickness of both side surfaces of the cylindrical portion in a cross section perpendicular to the direction in which the current flows. However, it is characterized by being thicker than other parts.

  According to this, in the cross section of the cylindrical portion of the magnetic shield member, the thickness of both side surfaces of the cylindrical portion is thicker than other regions, so that concentration of magnetic flux density on the side surface portion can be avoided, and the magnetic shield member The magnetic flux density distribution inside can be made substantially uniform. Thereby, the thickness of the magnetic shield member can be designed to be thinner, and the weight of the magnetic shield member can be reduced to the minimum.

  The current sensor of the present invention includes a current path in which a first current path and a second current path electrically connected to the first current path are arranged in parallel, the first current path, A magnetic shield member having a cylindrical section having a quadrangular cross section surrounding the second current path; and a magnetic shield member provided in a region surrounded by the magnetic shield member for detecting a magnetic field generated when a current flows in the current path. One magnetoelectric conversion element, and the same current flows in the first current path and the second current path, and both side surfaces of the cylindrical portion in a cross section perpendicular to the direction in which the current flows. It is characterized in that the wall thickness from the region to the four corners is thicker than other parts.

  According to this, in the cross section of the cylindrical portion of the magnetic shield member, the thickness from the both sides of the cylindrical portion to the four corner regions is thicker than the other regions, so the magnetic flux density of the four corner region portions Concentration can be avoided, and the magnetic flux density distribution in the magnetic shield member can be made substantially uniform. Thereby, the thickness of the magnetic shield member can be designed to be thinner, and the weight of the magnetic shield member can be reduced to the minimum.

  In the current sensor of the present invention, the first magnetoelectric conversion element is provided on the first current path, and a magnetic field generated when a current flows in the current path on the second current path is detected. The second magnetoelectric conversion element is provided.

  According to this, since the first magnetoelectric conversion element is provided on the first current path and the second magnetoelectric conversion element is provided on the second current path, current flows in the external magnetic field and the current path. The influence of the internal magnetic field that occurs sometimes appears in the two magnetoelectric transducers (the first magnetoelectric transducer and the second magnetoelectric transducer) with the same strength. For this reason, the influence of this magnetic field can be canceled more accurately by differentially processing the outputs from the two magnetoelectric conversion elements (the first magnetoelectric conversion element and the second magnetoelectric conversion element). This can reduce the deterioration of the measurement accuracy of the current sensor.

  In the current sensor of the present invention, a third current path that connects one end of the first current path and one end of the second current path is provided, and the third current path is surrounded by the magnetic shield member. It is characterized by.

  According to this, since the magnetic shield member is surrounded, including the third current path connecting one end of the first current path and one end of the second current path, the first current path is formed by the magnetic shield member. And the influence of the external magnetic field from the direction in which the current flows in the second current path can be reduced. Thereby, the deterioration of the measurement accuracy of the current sensor can be further reduced.

  The current sensor of the present invention can avoid the concentration of the magnetic flux density in the four corner regions, and can make the magnetic flux density distribution in the magnetic shield member substantially uniform. Thereby, the thickness of the magnetic shield member can be designed to be thinner, and the weight of the magnetic shield member can be reduced to the minimum.

It is an exploded perspective view explaining the current sensor of a 1st embodiment of the present invention. It is a perspective view explaining the current sensor of a 1st embodiment of the present invention. It is a top view explaining the current sensor of the first embodiment of the present invention. It is a figure explaining the current sensor of 1st Embodiment of this invention, Comprising: It is sectional drawing in the IV-IV line | wire shown in FIG. It is a block diagram explaining the current sensor of 1st Embodiment of this invention, Comprising: It is sectional drawing which showed an example of the relationship between the magnetic shielding member in FIG. 4, and an internal magnetic field. It is a disassembled perspective view explaining the current sensor of 2nd Embodiment of this invention. It is a top view explaining the current sensor of the second embodiment of the present invention. It is a figure explaining the current sensor of 2nd Embodiment of this invention, Comprising: It is sectional drawing in the VIII-VIII line shown in FIG. It is a block diagram explaining the current sensor of 2nd Embodiment of this invention, Comprising: It is sectional drawing which showed an example of the relationship between the magnetic shielding member in FIG. 8, and an internal magnetic field. It is a disassembled perspective view explaining the current sensor of 3rd Embodiment of this invention. It is an upper surface figure explaining the current sensor of a 3rd embodiment of the present invention. It is a side view explaining the current sensor of a 3rd embodiment of the present invention. It is a figure explaining the current sensor of 3rd Embodiment of this invention, Comprising: It is sectional drawing in the XIII-XIII line | wire shown in FIG. It is a block diagram explaining the current sensor of 3rd Embodiment of this invention, Comprising: It is sectional drawing which showed an example of the relationship between the magnetic shielding member in FIG. 13, and an internal magnetic field. FIG. 15A is a cross-sectional view of a magnetic shield member according to a first modification, and FIG. 15B is a cross-sectional view of a magnetic shield member according to a second modification. . FIG. 16A is a cross-sectional view of a magnetic shield member of a third modification, and FIG. 16B is a cross-sectional view of a magnetic shield member of the fourth modification. . It is a figure explaining the modification 7 of the current sensor of 3rd Embodiment of this invention, Comprising: It is a perspective view of a current path. It is a figure which shows the outline of a structure of the current sensor in a prior art example. It is a figure which shows the outline of a structure of the current sensor in a comparative example.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 1 is an exploded perspective view illustrating a current sensor 101 according to the first embodiment of the present invention. FIG. 2 is a perspective view illustrating the current sensor 101 according to the first embodiment of the present invention. FIG. 3 is a top view illustrating the current sensor 101 according to the first embodiment of the present invention. FIG. 4 is a diagram illustrating the current sensor 101 according to the first embodiment of the present invention, and is a cross-sectional view taken along the line IV-IV shown in FIG. FIG. 5 is a configuration diagram illustrating the current sensor 101 according to the first embodiment of the present invention, and is a cross-sectional view illustrating an example of a relationship between the magnetic shield member 15 and the internal magnetic field in FIG. 4.

  As shown in FIGS. 1 to 4, the current sensor 101 according to the first embodiment of the present invention includes a current path 12 in which a first current path 12 a and a second current path 12 b are arranged in parallel, and a current path 12. A first magnetoelectric conversion element 13A that detects a magnetic field generated when a current flows through the magnetic field, and a magnetic shield member 15 that surrounds the first magnetoelectric conversion element 13A, the first current path 12a, and the second current path 12b. Composed. In addition, the current sensor 101 is provided with an insulating substrate 19 on which the first magnetoelectric conversion element 13A is mounted and having a circuit pattern (not shown), and a support member 52 that positions and supports the current path 12. It has been. Although not shown, a housing that houses the current path 12, the first magnetoelectric conversion element 13A, the magnetic shield member 15, the insulating substrate 19, and the support member 52 is used as necessary.

  The current path 12 is made of a material having good conductivity such as copper (Cu). As shown in FIGS. 1 and 4, the first current path 12a and the second current path 12b are arranged in parallel, On both ends of the current path 12a and the second current path 12b, a terminal portion 17a and a terminal portion 17b are provided continuously to the first current path 12a, and a terminal portion 17c and a terminal portion are continuous to the second current path 12b. 17d is provided.

  Further, as shown in FIG. 1, the terminal portion 17a, the terminal portion 17b, the terminal portion 17c, and the terminal portion 17d are connected and fixed to a measured current path (current path to be measured) not shown. A hole 17h, a hole 17i, a hole 17j, and a hole 17k are provided. Then, the first current path 12a and the current path to be measured, the second current path 12b and the current path to be measured are connected, and the first current path 12a and the second current path 12b are electrically connected. The same magnitude of current flows in the opposite direction in the first current path 12a and the second current path 12b. For example, a current flows in one direction (Y1 direction shown in FIG. 1) in the first current path 12a, and a current flows in the other direction (Y2 direction shown in FIG. 1) opposite to the one direction in the second current path 12b. Is flowing. Although connection and fixing of the current path 12 (first current path 12a and second current path 12b) and the current path to be measured are not shown, holes (17h, 17i, 17j, 17k) of the current path 12 are not shown. Can be easily achieved using bolts and nuts. In addition, although copper (Cu) was used for the material of the electric current path 12, it is not limited to this, What is necessary is just a material with good electroconductivity, for example, aluminum (Al) etc. may be sufficient.

  Further, when the current sensor 101 is assembled, the first current path 12a and the second current path 12b are arranged on the upper side (Z1 side shown in FIG. 4) of the support member 52 shown in FIG. 52.

  The support member 52 uses a synthetic resin material such as ABS (acrylonitrile butadiene styrene), PET (polyethylene terephthalate), PBT (polybutylene terephthalate), LCP (liquid crystal polymer), and has a hole in the center as shown in FIG. Are formed of a flat base portion 52d provided with a plurality of portions extending from the base portion 52d. The plurality of portions include a standing portion 52r formed on the left and right sides of one end of the base 52d (end on the Y2 direction side shown in FIG. 1) and the other end (Y1 shown in FIG. 1) of the base 52d. (The end on the direction side) left and right standing portions 52e, left and right side wall portions 52w connected to the standing portion 52r and the standing portion 52e, and a position sandwiched between the side wall portions 52w And a projecting portion 52t provided on the head. Further, since the support member 52 uses a synthetic resin material, it is processed by injection molding or the like, and such a complicated shape can be easily produced.

  When the current path 12 is placed on the support member 52, the inclined part 12m and the inclined part formed outside the terminal part 17a of the first current path 12a and the terminal part 17c of the second current path 12b shown in FIG. The portion 12n and the inclined wall 52k provided on the standing portion 52r of the support member 52 are in contact with each other, and the outside of the terminal portion 17b of the first current path 12a and the terminal portion 17d of the second current path 12b. The inclined portion 12m and the inclined portion 12n that are formed in this manner and the inclined wall 52j provided on the standing portion 52e of the support member 52 are brought into contact with each other. Further, the protruding portion 52t of the support member 52 is disposed so as to be sandwiched between the first current path 12a and the second current path 12b. Thereby, the current path 12 (the first current path 12a and the second current path 12b) and the support member 52 can be accurately positioned.

  The first magnetoelectric conversion element 13A is an element that detects a magnetic field generated when a current flows in the current path 12, and is, for example, a magnetic detection element (GMR (Giant Magneto Resistive) element using a giant magnetoresistance effect). ), As shown in FIGS. 1 and 4, the first current path 12 a is disposed. In the first magnetoelectric conversion element 13A, after the GMR element is fabricated on the silicon substrate, the GMR element is cut out to form a chip, and the cut out GMR element chip and the lead terminal 14r for signal extraction are provided. The magnetic sensor package 14 is formed by electrical connection and packaging with a thermosetting synthetic resin. Since this GMR element has a property that the resistance value of the GMR element changes according to the change of the magnetic field, the first magnetoelectric conversion element 13A receives the current flowing through the current path 12 from the change of the resistance value. By calculating, the current flowing through the current path 12 can be measured.

  Further, in the first magnetoelectric conversion element 13A, a lead terminal 14r and a circuit pattern (not shown) are soldered, and as shown in FIG. 4, a current path 12 (first current path 12a and second current path 12b). ) Is mounted on an insulating substrate 19 disposed to face. Then, when the current path 12 and the insulating substrate 19 are disposed, as shown in FIG. 4, the first magnetoelectric conversion element 13A is provided on one of the first current paths 12a, and the first magnetoelectric The sensitivity element KD of the conversion element 13A is disposed in a direction parallel to the width direction of the first current path 12a (X1 direction in FIG. 4).

  The insulating substrate 19 uses a generally well-known single-sided printed wiring board, and a metal foil such as copper (Cu) provided on the base substrate is patterned on a glass-containing epoxy resin base substrate. A circuit pattern for configuring the circuit is formed. In addition, although the printed wiring board which consists of an epoxy resin containing glass was used for the insulating substrate 19, it is not limited to this, For example, a ceramic wiring board and a flexible wiring board may be used.

  The magnetic shield member 15 is made of silicon steel having a high magnetic permeability, and includes an upper magnetic shield member 15A and a lower magnetic shield member 15D, as shown in FIGS. The upper magnetic shield member 15A includes an upper surface 15a, side surfaces 15b extending from both ends of the upper surface 15a in one direction (X direction shown in FIG. 1), and the other direction (direction orthogonal to the one direction) of the upper surface 15a. , And a side surface 15c extending from both ends on the side in the Y direction). The lower magnetic shield member 15D is formed in a U shape with a bottom surface 15d and side surfaces 15s extending from both ends of the bottom surface 15d.

  When the magnetic shield member 15 is assembled, as shown in FIGS. 2 and 4, the upper magnetic shield member 15A has the upper surface 15a and the side surface 15b and the lower magnetic shield member 15D to form a cylindrical portion 15P. ing. The cylindrical portion 15P has a quadrangular cross-sectional shape, and the first magnetoelectric transducer 13A (magnetic sensor package 14), the insulating substrate 19 on which the magnetic sensor package 14 is mounted, the first current path 12a, and the second The current path 12b and the support member 52 are accommodated so as to be enclosed. Although silicon steel is used as the material of the magnetic shield member 15, the material is not limited to this as long as the material has a magnetic shield effect.

  Further, as shown in FIG. 4 showing a cross section perpendicular to the direction in which the current flows, the cylindrical portion 15P formed by the upper magnetic shield member 15A and the lower magnetic shield member 15D The wall thickness is thicker than other areas. When the current sensor 101 thus configured is connected to a current path to be measured (not shown) and a current flows, as shown in FIG. 5, the current path 12 (the first current path 12a and An internal magnetic field is generated by the second current path 12 b), and this internal magnetic field converges on the magnetic shield member 15. At this time, like the current sensor 900 of the comparative example, concentration of magnetic flux density was observed in the four corner regions of the magnetic shield member 905 (P portion shown in FIG. 19), whereas the thickness of the four corner region FA was different. Therefore, the magnetic flux density distribution in the magnetic shield member 15 can be made almost uniform.

  The magnetic shield member 15 is produced by bending a single silicon steel plate to form a box-like shape or a U-shape, and then forming a prismatic silicon at portions corresponding to the four corners of the cylindrical portion 15P having a quadrangular cross section. It can be easily manufactured by attaching a steel plate. Further, as described above, since the concentration of the magnetic flux density in the four corner areas FA can be avoided, the thickness of one silicon steel sheet can be further reduced.

  As described above, in the current sensor 101 according to the first embodiment of the present invention, in the cross section of the cylindrical portion 15P of the magnetic shield member 15, the thickness of the area FA at the four corners of the cross section is thicker than the other areas. The concentration of the magnetic flux density in the area FA can be avoided, and the magnetic flux density distribution in the magnetic shield member 15 can be made substantially uniform. Thereby, the thickness of the magnetic shield member 15 can be designed to be thinner, and the weight of the magnetic shield member 15 can be reduced to the minimum.

[Second Embodiment]
FIG. 6 is an exploded perspective view illustrating the current sensor 102 according to the second embodiment of the present invention. FIG. 7 is a top view illustrating the current sensor 102 according to the second embodiment of the present invention. FIG. 8 is a diagram illustrating the current sensor 102 according to the second embodiment of the present invention, and is a cross-sectional view taken along line VIII-VIII shown in FIG. FIG. 9 is a configuration diagram illustrating the current sensor 102 according to the second embodiment of the present invention, and is a cross-sectional view illustrating an example of the relationship between the magnetic shield member 25 and the internal magnetic field in FIG. 8. Further, the current sensor 102 of the second embodiment mainly differs from the first embodiment in the configuration of the magnetic shield member 25. In addition, about the same structure as 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  As shown in FIGS. 6 to 8, the current sensor 102 according to the second embodiment of the present invention includes a current path 12 in which a first current path 12 a and a second current path 12 b are arranged in parallel, and a current path 12. A first magnetoelectric conversion element 23A that detects a magnetic field generated when a current flows through the magnetic field, and a magnetic shield member 25 that surrounds the first magnetoelectric conversion element 23A, the first current path 12a, and the second current path 12b. Composed. In addition, the current sensor 102 is provided with an insulating substrate 19 on which the first magnetoelectric conversion element 23A is mounted and having a circuit pattern (not shown), and a support member 52 that positions and supports the current path 12. It has been. Although not shown in the figure, a housing that houses the current path 12, the first magnetoelectric conversion element 23A, the magnetic shield member 25, the insulating substrate 19, and the support member 52 is used as necessary.

  As in the first embodiment, the current path 12 is made of a material having good conductivity such as copper (Cu). As shown in FIGS. 6 and 8, the first current path 12a and the second current path 12b are separated from each other. When the current sensor 102 is assembled in parallel, the first current path 12a and the second current path 12b are disposed above the support member 52 shown in FIG. 6 (Z1 side shown in FIG. 8). And placed on the support member 52. As in the first embodiment, the first current path 12a and the current path to be measured, the second current path 12b and the current path to be measured are connected, and the first current path 12a and the second current path 12b. Are electrically connected, current of the same magnitude flows in the opposite direction in the first current path 12a and the second current path 12b. For example, the current flows in one direction (Y1 direction shown in FIG. 6) in the first current path 12a, and the current flows in the other direction (Y2 direction shown in FIG. 6) opposite to the one direction in the second current path 12b. Is flowing.

  The first magnetoelectric conversion element 23A is an element that detects a magnetic field generated when a current flows through the current path 12, and uses, for example, a Hall element, and includes a Hall element and a lead terminal 24r for signal extraction. Electrically connected and packaged with a thermosetting synthetic resin to form a magnetic sensor package 24 as shown in FIGS. The first magnetoelectric conversion element 23A is soldered to the lead terminal 24r and a circuit pattern (not shown), and as shown in FIG. 8, the current path 12 (the first current path 12a and the second current path). 12b) is mounted on an insulating substrate 19 disposed opposite to the substrate 12b). When the current path 12 and the insulating substrate 19 are disposed, as shown in FIG. 8, the first magnetoelectric conversion element 23A is equidistant from the first current path 12a and the second current path 12b. The sensitivity axis direction KD of the first magnetoelectric conversion element 23A is disposed so as to face the direction (Z2 direction in FIG. 4) orthogonal to the width direction of the first current path 12a and the second current path 12b. Yes.

  The magnetic shield member 25 is made of silicon steel having a high magnetic permeability, and is composed of an upper magnetic shield member 25A and a lower magnetic shield member 25D as shown in FIGS. The upper magnetic shield member 25A includes an upper surface 25a, side surfaces 25b extending from both ends of the upper surface 25a in one direction (X direction shown in FIG. 6), and the other direction of the upper surface 25a (a direction orthogonal to the one direction). , And a side face 25c extending from both ends on the Y direction side in FIG. 6. The lower magnetic shield member 25D is formed in a U shape with a bottom surface 25d and side surfaces 25s extending from both ends of the bottom surface 25d.

  Further, when the magnetic shield member 25 is assembled, as shown in FIGS. 7 and 8, a cylindrical portion 25P is formed by the upper surface 25a and the side surface 25b of the upper magnetic shield member 25A and the lower magnetic shield member 25D. ing. The cylindrical portion 25P includes the first magnetoelectric transducer 23A (magnetic sensor package 24), the insulating substrate 19 on which the magnetic sensor package 24 is mounted, the first current path 12a, the second current path 12b, and the support member 52. It is housed in an enclosed manner. Although silicon steel is used as the material of the magnetic shield member 25, the material is not limited to this as long as the material has a magnetic shield effect.

  Further, as shown in FIG. 8 showing a cross section orthogonal to the direction in which the current flows, the cylindrical portion 25P formed by the upper magnetic shield member 25A and the lower magnetic shield member 25D has both side surfaces, specifically, The thickness of the side surfaces (25b, 25s) located on the outer side in the direction in which the first current path 12a and the second current path 12b are arranged in parallel is thicker than in other regions. When the current sensor 102 configured in this way is connected to a current path to be measured (not shown) and a current flows, as shown in FIG. 9, the current path 12 (first current path 12a and An internal magnetic field is generated by the second current path 12 b), and this internal magnetic field converges on the magnetic shield member 25. At this time, concentration of magnetic flux density was observed in the four corner regions of the magnetic shield member 905 as in the current sensor 900 of the comparative example (P portion shown in FIG. 19), whereas the meat on both side surfaces (25b, 25s). Since the thickness is thicker than other regions, the concentration of magnetic flux density in the four corner regions can be avoided, and the magnetic flux density distribution in the magnetic shield member 25 can be made substantially uniform. In particular, when the space between the first current path 12a and the second current path 12b is wide and the cross-sectional shape of the cylindrical portion 25P of the magnetic shield member 25 is wide, concentration of magnetic flux density occurs on both side surfaces (25b, 25s). It is easy and it is more effective when the thickness of both side surfaces (25b, 25s) is thicker than other regions.

  The magnetic shield member 25 is produced by bending a single silicon steel plate to form a box shape or a U-shape, and then forming portions corresponding to both side surfaces (25b, 25s) of the cylindrical portion 25P. It can be easily produced by attaching a plate-shaped silicon steel plate. Further, as described above, since the concentration of magnetic flux density in the four corner regions can be avoided, the thickness of one silicon steel sheet can be further reduced.

  As described above, in the current sensor 102 according to the second embodiment of the present invention, in the cross section of the cylindrical portion 25P of the magnetic shield member 25, the thickness of both side surfaces (25b, 25s) of the cylindrical portion 25P is compared with other regions. Since it is thick, it is possible to avoid the concentration of the magnetic flux density in the four corner regions, and the magnetic flux density distribution in the magnetic shield member 25 can be made substantially uniform. Thereby, the thickness of the magnetic shield member 25 can be designed to be thinner, and the weight of the magnetic shield member 25 can be reduced to the minimum.

[Third Embodiment]
FIG. 10 is an exploded perspective view illustrating the current sensor 103 according to the third embodiment of the present invention. FIG. 11 is a top view illustrating the current sensor 103 according to the third embodiment of the present invention. FIG. 12 is a side view illustrating the current sensor 103 according to the third embodiment of the present invention. FIG. 13 is a diagram illustrating the current sensor 103 according to the third embodiment of the present invention, and is a cross-sectional view taken along line XIII-XIII shown in FIG. FIG. 14 is a configuration diagram illustrating the current sensor 103 according to the third embodiment of the present invention, and is a cross-sectional view illustrating an example of the relationship between the magnetic shield member 35 and the internal magnetic field in FIG. 13. Further, the current sensor 103 of the third embodiment is mainly different from the first embodiment in the configuration of the magnetic shield member 35 and the current path 32. In addition, about the same structure as 1st Embodiment, the same code | symbol is attached | subjected and detailed description is abbreviate | omitted.

  The current sensor 103 according to the third embodiment of the present invention detects a U-shaped current path 32 and a magnetic field generated when a current flows through the current path 32, as shown in FIGS. The first and second magnetoelectric conversion elements 33 </ b> A and 33 </ b> B, and the first and second magnetoelectric conversion elements 33 </ b> A and 33 </ b> B and the magnetic shield member 35 that surrounds the current path 32 are configured. In addition, the current sensor 103 is mounted with the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B, and the current path 32 is positioned and supported by the insulating substrate 19 having a circuit pattern (not shown). And a support member 72. Although not shown in the figure, a housing that houses the current path 32, the first magnetoelectric conversion element 33A, the second magnetoelectric conversion element 33B, the magnetic shield member 35, the insulating substrate 19, and the support member 72 is provided as necessary. Used.

  The current path 32 is made of a material having good conductivity such as copper (Cu). As shown in FIGS. 10 and 13, the first current path 32a and the second current path 32a arranged in parallel with the first current path 32a are used. The current path 32b and the third current path 32c connecting one end of the first current path 32a and one end of the second current path 32b are formed in a U shape.

  Further, the current path 32 is provided with a terminal portion 37a and a terminal portion 37c on the opposite side of the third current path 32c, and is continuous with the first current path 32a and the second current path 32b. It is formed toward the direction (Y2 direction shown in FIG. 1). The end portions of the terminal portion 37a and the terminal portion 37c are provided with holes 37h and 37j for connecting and fixing a current path to be measured (current path to be measured) (not shown). The connection and fixing of the current path 32 to the current path to be measured are not illustrated, but can be easily achieved by using the holes 37h and 37j of the current path 32 and using bolts and nuts. .

  When the first current path 32a and the second current path 32b are connected to the current path to be measured, the same current flows in the opposite direction in the first current path 32a and the second current path 32b. . For example, a current flows in one direction (Y1 direction shown in FIG. 10) in the first current path 32a, and a current flows in the other direction (Y2 direction shown in FIG. 10) opposite to the one direction in the second current path 32b. Is flowing. In addition, although copper (Cu) was used for the material of the electric current path 32, it is not limited to this, What is necessary is just a material with sufficient electroconductivity, for example, aluminum (Al) etc. may be sufficient.

  Further, when the current sensor 103 is assembled, the first current path 32a and the second current path 32b are arranged above the support member 72 shown in FIG. 10 (Z1 side shown in FIG. 13). 72.

  The support member 72 uses a synthetic resin material such as ABS (acrylonitrile butadiene styrene), PET (polyethylene terephthalate), PBT (polybutylene terephthalate), LCP (liquid crystal polymer), and has a hole in the center as shown in FIG. Is formed from a flat base 72d provided with a plurality of portions extending from the base 72d. The plurality of portions are provided at a position sandwiched between the standing portion 72r formed on the left and right of one end portion of the base portion 72d (end portion on the Y2 direction side shown in FIG. 10), and the standing portion 72r. The projecting portion 72t and the extending portion 72e formed on the left and right sides of the other end portion (the end portion on the Y1 direction side shown in FIG. 10) of the base portion 72d. Further, since the support member 72 uses a synthetic resin material, it is processed by injection molding or the like, and such a complicated shape can be easily produced.

  When the current path 32 is placed on the support member 72, as shown in FIG. 10, the inclined portion formed outside the terminal portion 37a of the first current path 32a and the terminal portion 37c of the second current path 32b. 32m and the inclined part 32n, and the inclined wall 72k provided in the standing part 72r of the support member 72 are brought into contact with each other. Further, the outer end face 32t of the U-shaped width direction (X direction shown in FIG. 10) of the current path 32 and the extending portion 72e of the supporting member 72 are brought into contact with each other, and the protruding portion of the supporting member 72 is provided. 72 t is fitted in the slit portion 32 s of the current path 32. As a result, the current path 32 and the support member 72 can be accurately positioned.

  The first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are elements that detect a magnetic field generated when a current flows in the current path 32. For example, a magnetic detection element (GMR) using a giant magnetoresistance effect is used. (Giant Magneto Resistive) element). As shown in FIGS. 10 and 13, the first magnetoelectric conversion element 33A is arranged corresponding to the first current path 32a, and the second magnetoelectric conversion element 33B is arranged corresponding to the second current path 32b. It is arranged. The first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are for producing a GMR element on a silicon substrate, cutting out the GMR element to make a chip, and taking out the chip and the signal of the cut out GMR element. The lead terminal 34r is electrically connected and packaged with a thermosetting synthetic resin to form a magnetic sensor package 34.

  Since this GMR element has a property that the resistance value of the GMR element changes in accordance with the change of the magnetic field, the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B have a current path from the change of the resistance value. By calculating the current flowing through 32, the current flowing through the current path 32 can be measured. Note that, in the third embodiment of the present invention, the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are used as one set, so that the two magnetoelectric conversion elements (first magnetoelectric conversion element 33A and By differentially processing the output from the second magnetoelectric conversion element 33B), the influence of the external magnetic field can be canceled more accurately.

  Further, the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are soldered to the lead terminal 34r and a circuit pattern (not shown), and as shown in FIGS. It is mounted on an insulating substrate 19 disposed opposite to the letter shape. When the current path 32 and the insulating substrate 19 are provided, as shown in FIG. 13, the first magnetoelectric conversion element 33A is provided on one first current path 32a, and the second magnetoelectric conversion element 33B is provided on the other second current path 32b. For this reason, it is possible to more accurately cancel the influence of the internal magnetic field by differentially processing the outputs from the two magnetoelectric conversion elements (the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B).

  Further, when the current path 32 and the insulating substrate 19 are disposed, as shown in FIG. 13, the sensitivity axis directions KD of the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B are the same direction (FIG. 13). Then, as shown in FIG. 10, the sensitivity influence axis direction ED of the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B is the same direction (in FIG. 10, (Y1 direction). Then, the current sensor 103 according to the third embodiment of the present invention calculates the signal from the first magnetoelectric conversion element 33A and the signal from the second magnetoelectric conversion element 33B, thereby measuring the current path to be measured (current path to be measured). ) Can be accurately measured. In the third embodiment of the present invention, the sensitivity influence axis direction ED is the direction of the bias applied to the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B, and the sensitivity axis direction KD and the sensitivity influence axis. Although the case where the angle formed by the direction ED is 90 ° has been described, the angle is not limited to 90 °.

  The magnetic shield member 35 is made of silicon steel having a high magnetic permeability, and includes an upper magnetic shield member 35A and a lower magnetic shield member 35D, as shown in FIGS. The upper magnetic shield member 35A includes an upper surface 35a, side surfaces 35b extending from both ends of the upper surface 35a in one direction (X direction shown in FIG. 10), and the other direction (direction orthogonal to the one direction) of the upper surface 35a. , And a side surface 35c extending from both ends on the side (Y direction shown in FIG. 10). The lower magnetic shield member 35D is formed in a U shape by a bottom surface 35d and side surfaces 35s extending from both ends of the bottom surface 35d.

  Further, when the magnetic shield member 35 is assembled, as shown in FIGS. 11 to 13, the upper surface 35a and the side surface 35b of the upper magnetic shield member 35A and the lower magnetic shield member 35D form a cylindrical portion 35P. ing. The cylindrical portion 35P has a quadrangular cross-sectional shape, and the first magnetoelectric conversion element 33A (magnetic sensor package 34) and the second magnetoelectric conversion element 33B (magnetic sensor package 34) and the magnetic sensor package 34 are mounted. The insulating substrate 19, the current path 32 (the first current path 32a, the second current path 32b, and the third current path 32c), and the support member 72 are accommodated so as to surround them. In particular, in the third embodiment of the present invention, as shown in FIG. 12, since the third current path 32c is surrounded by the magnetic shield member 35, current flows through the first current path 32a and the second current path 32b. The influence of the external magnetic field from the direction (Y direction shown in FIG. 12) can be reduced. Although silicon steel is used as the material of the magnetic shield member 35, the material is not limited to this as long as the material has a magnetic shield effect.

  Further, as shown in FIG. 13 showing a cross section orthogonal to the direction in which the current flows, a cylindrical section 35P having a quadrangular cross section formed by the upper magnetic shield member 35A and the lower magnetic shield member 35D has four corners from both sides. The thickness of the region (PA portion shown in FIG. 13) is thicker than other regions. When the current sensor 103 configured in this way is connected to a current path to be measured (not shown) and a current flows, as shown in FIG. 14, a current path 32 (first current path 32a and An internal magnetic field is generated by the second current path 32 b), and this internal magnetic field converges on the magnetic shield member 35. At this time, concentration of magnetic flux density was observed in the four corner regions of the magnetic shield member 905 as in the current sensor 900 of the comparative example (P portion shown in FIG. 19), whereas the four corner regions (FIG. 13) from both sides. Is thicker than other regions, so that concentration of magnetic flux density in the four corner regions can be avoided, and the magnetic flux density distribution in the magnetic shield member 35 is made substantially uniform. be able to.

  The magnetic shield member 35 is produced by bending a single silicon steel plate to form a box-like shape or a U-shape, and then to the portions corresponding to the four corners from both side surfaces of the cylindrical portion 35P having a square cross section. It can be easily produced by attaching an L-shaped silicon steel plate. Further, as described above, since the concentration of magnetic flux density in the four corner regions can be avoided, the thickness of one silicon steel sheet can be further reduced.

  As described above, the current sensor 103 according to the third embodiment of the present invention has a cross section of the cylindrical portion 35P of the magnetic shield member 35 from the both side surfaces of the cylindrical portion 35P to the four corner regions (PA portions shown in FIG. 13). Since the thickness is thicker than other regions, concentration of the magnetic flux density in the four corner regions can be avoided, and the magnetic flux density distribution in the magnetic shield member 35 can be made substantially uniform. Thereby, the thickness of the magnetic shield member 35 can be designed to be thinner, and the weight of the magnetic shield member 35 can be reduced to the minimum.

  In addition, since the first magnetoelectric conversion element 33A is provided on the first current path 32a and the second magnetoelectric conversion element 33B is provided on the second current path 32b, current is supplied to the external magnetic field and the current path 32. The influence of the internal magnetic field generated when it flows appears in the two magnetoelectric conversion elements (the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B) with the same strength. For this reason, the influence of this magnetic field can be canceled more accurately by differentially processing the outputs from the two magnetoelectric conversion elements (the first magnetoelectric conversion element 33A and the second magnetoelectric conversion element 33B). As a result, the deterioration of the measurement accuracy of the current sensor 103 can be reduced.

  In addition, since the third current path 32c that connects one end of the first current path 32a and one end of the second current path 32b is also surrounded by the magnetic shield member 35, the magnetic shield member 35 allows the first current path 32a to be The influence of the external magnetic field from the direction in which current flows in the current path 32a and the second current path 32b can be reduced. Thereby, the deterioration of the measurement accuracy of the current sensor 103 can be further reduced.

  In addition, this invention is not limited to the said embodiment, For example, it can deform | transform and implement as follows, These embodiments also belong to the technical scope of this invention.

  FIG. 15 is a configuration diagram illustrating a modification of the current sensor of the present invention. FIG. 15A is a cross-sectional view of the magnetic shield member C15 of the first modification, and FIG. 15B is a magnetic shield member of the second modification. It is sectional drawing of C25. FIG. 16 is a configuration diagram illustrating a modification of the current sensor of the present invention. FIG. 16A is a cross-sectional view of the magnetic shield member C35 of Modification 3. FIG. 16B is a magnetic shield member of Modification 4. It is sectional drawing of C45. FIG. 17 is a diagram for explaining a seventh modification of the current sensor 103 according to the third embodiment of the present invention, and is a perspective view of the current path C32.

<Modification 1>
In the said 1st Embodiment, although it comprised so that thickness might become thick compared with another area | region by sticking a square-shaped silicon steel plate to the four corners of the magnetic shielding member 15, by giving plating, As shown to FIG. 15A, you may comprise so that the thickness of the four corners of the magnetic shielding member C15 may become thick.

<Modification 2>
In the said 3rd Embodiment, it comprised so that thickness might become thick compared with another area | region by sticking an L-shaped silicon steel plate to the area | region of the four corners from the both sides | surfaces of the magnetic shielding member 35, By plating, as shown in FIG. 15B, the thickness of the four corner regions from both side surfaces of the magnetic shield member C25 may be increased.

<Modification 3><Modification4>
In the said 3rd Embodiment, although comprised suitably so that the cross-sectional shape of the cylindrical part 35P of the magnetic shielding member 35 may become a rectangular shape, as shown to FIG. 16A, the cross-sectional shape of a cylindrical part is the both sides. You may comprise so that the area | region C35b of four corners from a surface may become round and may become thick. Moreover, in the said 2nd Embodiment, although comprised suitably so that the cross-sectional shape of the cylindrical part 25P of the magnetic shielding member 25 may become a rectangular shape, as shown to FIG. 16B, the cylindrical part of the magnetic shielding member C45 The cross-sectional shape may be an elliptical shape and both side surfaces C45b may be thick. In the case of producing the modification 3 and the modification 4, a flat magnetic powder is dispersed in a synthetic resin such as ABS (acrylonitrile butadiene styrene) or PP (polypropylene), and then molded by injection molding or the like. Then, production is easy.

<Modification 5>
In the second embodiment, since the cylindrical portion 25P is formed by the upper magnetic shield member 25A and the lower magnetic shield member 25D, both side surfaces of the cylindrical portion 25P are connected to the side surface 25b of the upper magnetic shield member 25A. It is comprised by the side surface 25s of lower magnetic shield member 25D. The magnetic shield member 25 is not limited to the type formed by combining the upper and lower sides (Z direction shown in FIG. 6), but may be the type formed by combining the left and right sides (X direction shown in FIG. 6). In that case, the joint of the both side surfaces (25b, 25s) of the cylindrical portion 25P can be eliminated.

<Modification 6>
In the first embodiment and the third embodiment, GMR elements are preferably used as the first magnetoelectric conversion elements (13A, 33A) and the second magnetoelectric conversion elements 33B, but in addition, MR (Magneto Resistive) elements, AMR An (Anisotropic Magneto Resistive) element, a TMR (Tunnel Magneto Resistive) element, or the like may be used.

<Modification 7>
In the third embodiment, the current path 32 is formed in a U shape. However, the first current path 32a and the second current path 32b arranged in parallel are electrically connected, As long as it is accommodated in the magnetic shield member 35 including the three current paths 32c, for example, as shown in FIG. 17, it may be a third current path C32c bent downward. Such a shape may be used.

<Modification 8>
In the above embodiment, the first magnetoelectric conversion element (13A, 23A, 33A) and the second magnetoelectric conversion element 33B are arranged with the insulating substrate 19 interposed between the current path (12, 32). A configuration in which one magnetoelectric conversion element (13A, 23A, 33A) and second magnetoelectric conversion element 33B are arranged to face the current path (12, 32) may be employed.

<Modification 9>
In the above embodiment, the current path (12, 32) has a rectangular plate shape, that is, a so-called bus bar type. However, a current path of an electric wire type having a circular or elliptical cross section may be used. .

<Modification 10>
In the above embodiment, the first magnetoelectric conversion element (13A, 23A, 33A) and the second magnetoelectric conversion element 33B are packaged with a thermosetting synthetic resin to form a magnetic sensor package (14, 24, 34), and an insulating substrate 19, the first magnetoelectric conversion elements (13 </ b> A, 23 </ b> A, 33 </ b> A) and the second magnetoelectric conversion element 33 </ b> B may be directly mounted on the insulating substrate 19, so-called bare chip mounting.

  The present invention is not limited to the above-described embodiment, and can be modified as appropriate without departing from the scope of the object of the present invention.

12, 32, C32 Current path 12a, 32a First current path 12b, 32b Second current path 32c, C32c Third current path 13A, 23A, 33A First magnetoelectric conversion element 33B Second magnetoelectric conversion element 15, 25, 35, C15, C25, C35, C45 Magnetic shield member 15P, 25P, 35P, cylindrical part 101, 102, 103 Current sensor

Claims (5)

  1. A current path in which a first current path and a second current path electrically connected to the first current path are arranged in parallel;
    A magnetic shield member having a cylindrical section with a quadrangular cross section surrounding the first current path and the second current path;
    A first magnetoelectric conversion element that is provided in a region surrounded by the magnetic shield member and detects a magnetic field generated when a current flows through the current path;
    In the first current path and the second current path, currents of the same magnitude flow in opposite directions,
    In the cross section orthogonal to the direction in which the current flows, the thickness of the four corner regions of the cylindrical portion is thicker than other regions.
  2. A current path in which a first current path and a second current path electrically connected to the first current path are arranged in parallel;
    A magnetic shield member having a cylindrical portion surrounding the first current path and the second current path;
    A first magnetoelectric conversion element that is provided in a region surrounded by the magnetic shield member and detects a magnetic field generated when a current flows through the current path;
    The same current flows in the first current path and the second current path,
    In the cross section orthogonal to the direction in which the current flows, the thickness of both side surfaces of the cylindrical portion is thicker than other portions.
  3. A current path in which a first current path and a second current path electrically connected to the first current path are arranged in parallel;
    A magnetic shield member having a cylindrical section with a quadrangular cross section surrounding the first current path and the second current path;
    A first magnetoelectric conversion element that is provided in a region surrounded by the magnetic shield member and detects a magnetic field generated when a current flows through the current path;
    The same current flows in the first current path and the second current path,
    A current sensor characterized in that, in a cross section perpendicular to the direction in which the current flows, the thickness from both side surfaces of the cylindrical portion to the four corner regions is thicker than other portions.
  4. The first magnetoelectric transducer is provided on the first current path;
    The second magnetoelectric conversion element for detecting a magnetic field generated when a current flows in the current path is provided on the second current path. Current sensor.
  5. A third current path connecting one end of the first current path and one end of the second current path is provided;
    The current sensor according to any one of claims 1 to 4, wherein the third current path is surrounded by the magnetic shield member.
JP2013002773A 2013-01-10 2013-01-10 Current sensor Withdrawn JP2014134458A (en)

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Cited By (7)

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WO2016148032A1 (en) * 2015-03-18 2016-09-22 トヨタ自動車株式会社 Electric current sensor
JP2017004759A (en) * 2015-06-10 2017-01-05 アルプス電気株式会社 Rotary connector
WO2017199626A1 (en) * 2016-05-16 2017-11-23 日立オートモティブシステムズ株式会社 Current detection device and power conversion device provided with same
WO2017217267A1 (en) * 2016-06-15 2017-12-21 株式会社デンソー Electric current sensor
US20180045793A1 (en) * 2015-03-03 2018-02-15 Magna powertrain gmbh & co kg Electrical assembly for measuring a current intensity of a direct-current circuit by means of the anisotropic magnetoresistive effect
WO2018185964A1 (en) * 2017-04-04 2018-10-11 株式会社村田製作所 Current sensor
US10746821B2 (en) 2016-06-15 2020-08-18 Denso Corporation Current sensor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180045793A1 (en) * 2015-03-03 2018-02-15 Magna powertrain gmbh & co kg Electrical assembly for measuring a current intensity of a direct-current circuit by means of the anisotropic magnetoresistive effect
WO2016148032A1 (en) * 2015-03-18 2016-09-22 トヨタ自動車株式会社 Electric current sensor
JP2016173334A (en) * 2015-03-18 2016-09-29 トヨタ自動車株式会社 Current sensor
JP2017004759A (en) * 2015-06-10 2017-01-05 アルプス電気株式会社 Rotary connector
WO2017199626A1 (en) * 2016-05-16 2017-11-23 日立オートモティブシステムズ株式会社 Current detection device and power conversion device provided with same
CN109154629A (en) * 2016-05-16 2019-01-04 日立汽车系统株式会社 Current detection means and the power inverter for having the current detection means
US10564187B2 (en) 2016-05-16 2020-02-18 Hitachi Automotive Systems, Ltd. Current detection device including a current sensor to detect magnetic field vectors
WO2017217267A1 (en) * 2016-06-15 2017-12-21 株式会社デンソー Electric current sensor
US10746821B2 (en) 2016-06-15 2020-08-18 Denso Corporation Current sensor
WO2018185964A1 (en) * 2017-04-04 2018-10-11 株式会社村田製作所 Current sensor

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