JP2014090214A - Solid-state imaging element and camera - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid-state imaging device, which has photodiodes formed on a light receiving surface of a semiconductor substrate being disposed in a matrix shape on pixel-basis, capable of reducing ineffective region due to overlap of the color filters with each other.SOLUTION: The solid-state imaging device includes: a semiconductor substrate; and a pixel part in which plural pixels are formed on the semiconductor substrate. The pixel part is configured including: a first pixel group constituted of plural pixels; and other pixel groups, and at least a lens part is formed with an on-chip lens for each first pixel group and a part of the pixels of the first pixel group and other pixel group share a floating diffusion.

Description

  The present invention relates to a solid-state imaging device and a camera, and more particularly to a solid-state imaging device in which pixels having photodiodes on a light receiving surface are arranged in a matrix and a camera including the solid-state imaging device.

In the solid-state imaging device, incidental light does not efficiently reach the photoelectric conversion unit with pixel miniaturization, and there is a problem that sensitivity is lowered.
In order to solve this problem, for example, as disclosed in Patent Document 1, for the purpose of reducing light propagation loss within one pixel above the light receiving unit and below the on-chip lens (OCL). Optical waveguides have been proposed.

A Bayer array is widely known as a color filter array arranged in a pixel of a solid-state imaging device.
For example, an OCL is formed for each pixel, and an optical waveguide is formed between the photodiode and the OCL in each pixel. For example, the area of the photodiode is the same for each pixel.

In the solid-state imaging device having the above configuration, for example, in each color pixel of the color filter, the OCL shape and the waveguide shape are the same.
Further, as disclosed in Patent Document 2, a structure in which the OCL shape is changed for each color of the color filter is also known.

Since the CMOS image sensor employs a CMOS process having high affinity with a logic circuit, it has an advantage that peripheral circuits such as a digital signal processor can be mounted on the same semiconductor chip.
The peripheral circuit is devised to make the occupied area as small as possible by making full use of, for example, four layers of multilayer wiring.
When the number of pixel wiring layers is increased in accordance with the peripheral circuit portion, the distance from the semiconductor substrate on which the photodiode (PD) is formed to the OCL becomes longer, and there is a concern that the light collection efficiency is lowered.

In addition, a camera module for a mobile phone is required to reduce the height of the module in order to make the mobile phone smaller and thinner.
In order to respond to this, the angle of light incident on the peripheral portion of the field angle of the mounted image sensor tends to increase.
If the obliquely incident light at the periphery of the angle of view is not efficiently guided to the photodiode, the sensitivity difference between the periphery of the angle of view and the center of the angle of view increases, and pixel characteristics called shading deteriorate.

In general, in color filter formation, if adjacent pixels have different color arrangements, color filters may overlap between adjacent pixels, and that portion blocks light transmission and becomes an ineffective area.
Specifically, in the Bayer array, the adjacent pixels of the green pixel (G) are the red pixel (R) and the blue pixel (B), and the G and B color filters overlap and the G and R color filters overlap in the adjacent portion. Overlap occurs and becomes an invalid area.
Further, when the waveguide opening is reduced, there is a concern that the light condensing effect may be reduced.

  For example, Patent Documents 3 to 5 describe a solid-state imaging device in which pixels having photodiodes on a light receiving surface are arranged in a matrix.

JP 2004-221532 A JP 2008-172091 A JP 58-175372 A JP 2000-69491 A JP-A-5-243543

  As described above, the conventional solid-state imaging device such as a CMOS image sensor has a problem that an invalid area is generated due to overlapping of color filters.

  The solid-state imaging device according to the present invention includes a photodiode formed by being divided into pixels arranged in a matrix on a light receiving surface of a semiconductor substrate, and a signal generated and accumulated in the photodiode formed on the semiconductor substrate. A signal reading unit that reads a charge or a voltage corresponding to the signal charge; an insulating film that is formed on the semiconductor substrate so as to cover the photodiode; and includes an optical waveguide; and a color filter formed on the insulating film; A first pixel having four pixels in which green pixels having a green color filter are arranged in a horizontal direction and a vertical direction as the color filter, and an on-chip lens formed on the color filter. And a second pixel set having four pixels arranged in two horizontal and vertical directions, and a red color filter A second pixel set in which blue pixels having a blue color filter and a blue pixel are arranged and arranged diagonally is arranged so as to be alternately arranged in the horizontal direction and the vertical direction. Yes.

In the solid-state imaging device of the present invention, a photodiode is formed by dividing each pixel arranged in a matrix on the light receiving surface of a semiconductor substrate, and signal charges or signals generated and accumulated in the photodiode are formed on the semiconductor substrate. A signal reading unit for reading a voltage corresponding to the electric charge is formed. In addition, an insulating film including an optical waveguide is formed on the semiconductor substrate so as to cover the photodiode, a color filter is formed on the insulating film, and an on-chip lens is formed on the color filter.
Here, as a color filter, a green pixel having a green color filter is arranged in a first pixel group having four pixels in which two pixels are arranged in the horizontal direction and in the vertical direction, and two pixels are arranged in the horizontal direction and in the vertical direction. A second pixel group having four pixels, a second pixel group in which a red pixel having a red color filter and a blue pixel having a blue color filter are arranged by arranging two pixels diagonally, is horizontal. They are laid out so that they are arranged alternately in the vertical direction.

  The solid-state imaging device according to the present invention includes a photodiode formed by dividing each pixel arranged in a matrix on a light receiving surface of a semiconductor substrate, and formed and accumulated in the photodiode formed on the semiconductor substrate. A signal reading unit that reads a signal charge or a voltage corresponding to the signal charge, an insulating film that covers the photodiode and is formed on the semiconductor substrate, includes an optical waveguide, and a color formed on the insulating film A filter and an on-chip lens formed on the color filter, and the color filter includes four pixels in which green pixels each having a green color filter are arranged in two horizontal and vertical directions. A second image having one pixel group and four pixels in which blue pixels having a blue color filter are arranged in two horizontal and vertical directions. And a third pixel group having four pixels in which red pixels each having a red color filter are arranged in two horizontal and vertical directions, and the first pixel group and the second pixel group are horizontal. A fourth pixel set having a configuration alternately arranged in the direction and a fifth pixel set having a configuration in which the first pixel set and the third pixel set are alternately arranged in the horizontal direction are equivalent to the first pixel set. The on-chip lens is laid out such that the first pixel group, the second pixel group, and the third pixel group are alternately arranged in the vertical direction so as to be shifted in the horizontal direction. One on-chip lens is formed for each.

In the solid-state imaging device of the present invention, a photodiode is formed by dividing each pixel arranged in a matrix on the light receiving surface of a semiconductor substrate, and signal charges or signals generated and accumulated in the photodiode are formed on the semiconductor substrate. A signal reading unit for reading a voltage corresponding to the electric charge is formed. In addition, an insulating film including an optical waveguide is formed on the semiconductor substrate so as to cover the photodiode, a color filter is formed on the insulating film, and an on-chip lens is formed on the color filter.
Here, as the color filter, a first pixel group having four pixels in which green pixels having a green color filter are arranged in two horizontal and vertical directions, and a blue pixel having a blue color filter are arranged in the horizontal direction and A second pixel group having four pixels arranged in a vertical direction by two pixels, and a third pixel group having four pixels in which red pixels having a red color filter are arranged in two pixels in the horizontal direction and the vertical direction. And a first pixel set and a second pixel set arranged alternately in the horizontal direction, and a first pixel set and a third pixel set arranged alternately in a horizontal high school. The five pixel groups are laid out so as to be alternately arranged in the vertical direction so as to be shifted in the horizontal direction by the first pixel group.
As the on-chip lens, one on-chip lens is formed for each of the first pixel group, the second pixel group, and the third pixel group.

  According to the method for manufacturing a solid-state imaging device of the present invention, a photodiode divided into pixels arranged in a matrix on a light receiving surface of a semiconductor substrate, and a signal charge generated and accumulated in the photodiode or a signal charge corresponding to the signal charge Forming a signal reading unit for reading a voltage; forming an insulating film including an optical waveguide on the semiconductor substrate so as to cover the photodiode; forming a color filter on the insulating film; Forming an on-chip lens on the color filter, and in the step of forming the color filter, as the color filter, two green pixels each having a green color filter are arranged in a horizontal direction and a vertical direction. A first pixel group having four pixels and a second pixel having four pixels arranged in two horizontal and vertical directions. The second pixel set, which is a prime set, in which a red pixel having a red color filter and a blue pixel having a blue color filter are arranged with two pixels arranged diagonally, is alternately arranged in the horizontal direction and the vertical direction. Lay out the layout so that

According to the above-described method for manufacturing a solid-state imaging device of the present invention, a photodiode divided into pixels arranged in a matrix on a light receiving surface of a semiconductor substrate, and a signal charge generated and accumulated in the photodiode or the signal charge A signal reading unit for reading the measured voltage is formed. Next, an insulating film including an optical waveguide is formed on the semiconductor substrate so as to cover the photodiode. Next, a color filter is formed on the insulating film, and an on-chip lens is formed on the color filter.
Here, in the step of forming the color filter, as the color filter, a first pixel set having four pixels in which green pixels each having a green color filter are arranged in a horizontal direction and a vertical direction, and a horizontal direction and a vertical direction. This is a second pixel group having four pixels arranged in two directions in the direction, and a red pixel having a red color filter and a blue pixel having a blue color filter are arranged by arranging two pixels diagonally. The second pixel set is laid out so as to be alternately arranged in the horizontal direction and the vertical direction.

  The solid-state imaging device manufacturing method according to the present invention includes a photodiode divided into pixels arranged in a matrix on a light receiving surface of a semiconductor substrate, and a signal charge generated and accumulated in the photodiode or the signal charge. Forming a signal reading unit that reads a voltage according to the step, forming an insulating film including an optical waveguide on the semiconductor substrate so as to cover the photodiode, and forming a color filter on the insulating film And forming an on-chip lens on the color filter, and in the step of forming the color filter, as the color filter, two green pixels having a green color filter are arranged in a horizontal direction and a vertical direction. A first pixel group having four pixels arranged in a row and a blue pixel having a blue color filter are arranged in a horizontal direction and a vertical direction. A second pixel group having four pixels arranged in two pixels, and a third pixel group having four pixels in which red pixels having a red color filter are arranged in two pixels in the horizontal and vertical directions. A fourth pixel set having a configuration in which the first pixel set and the second pixel set are alternately arranged in a horizontal direction, and a configuration in which the first pixel set and the third pixel set are alternately arranged in a horizontal high school. In the step of forming the on-chip lens, the fifth pixel group is laid out so that the fifth pixel group is alternately arranged in the vertical direction so as to be shifted in the horizontal direction by the first pixel group. As a chip lens, one on-chip lens is formed for each of the first pixel group, the second pixel group, and the third pixel group.

According to the above-described method for manufacturing a solid-state imaging device of the present invention, a photodiode divided into pixels arranged in a matrix on a light receiving surface of a semiconductor substrate, and a signal charge generated and accumulated in the photodiode or the signal charge A signal reading unit for reading the measured voltage is formed. Next, an insulating film including an optical waveguide is formed on the semiconductor substrate so as to cover the photodiode. Next, a color filter is formed on the insulating film, and an on-chip lens is formed on the color filter.
Here, in the step of forming the color filter, as the color filter, a first pixel set having four pixels in which green pixels each having a green color filter are arranged in two horizontal and vertical directions, and a blue color filter A second pixel set having four pixels in which two blue pixels are arranged in the horizontal direction and in the vertical direction, and four pixels in which red pixels having a red color filter are arranged in two pixels in the horizontal and vertical directions A fourth pixel set having a configuration in which the first pixel set and the second pixel set are alternately arranged in the horizontal direction, and the first pixel set and the third pixel set are in a horizontal high school. The fifth pixel set having the alternately arranged configuration is laid out so as to be alternately arranged in the vertical direction so as to be shifted in the horizontal direction by the first pixel set.
In the step of forming the on-chip lens, one on-chip lens is formed as the on-chip lens for each of the first pixel group, the second pixel group, and the third pixel group.

  The camera according to the present invention includes a solid-state imaging device in which a plurality of pixels are integrated on a light-receiving surface, an optical system that guides incident light to an imaging unit of the solid-state imaging device, and signal processing that processes an output signal of the solid-state imaging device The solid-state imaging device includes a photodiode formed by dividing the pixels arranged in a matrix on the light receiving surface of the semiconductor substrate, and a photodiode formed on the semiconductor substrate and generated in the photodiode. A signal reading unit for reading the signal charge to be accumulated or a voltage corresponding to the signal charge, an insulating film including an optical waveguide formed on the semiconductor substrate so as to cover the photodiode, and formed on the insulating film A color filter and an on-chip lens formed on the color filter, and a green pixel having a green color filter is horizontally disposed as the color filter. A first pixel group having four pixels arranged in two directions and two pixels in the vertical direction and a second pixel group having four pixels arranged in two pixels in the horizontal direction and the vertical direction, each having a red color filter A second pixel set in which red pixels and blue pixels having a blue color filter are arranged with two pixels arranged diagonally is arranged so as to be arranged alternately in the horizontal direction and the vertical direction. ing.

  The camera of the present invention processes a solid-state imaging device in which a plurality of pixels are integrated on a light receiving surface, an optical system that guides incident light to an imaging unit of the solid-state imaging device, and an output signal of the solid-state imaging device. A signal processing circuit, and the solid-state imaging device is formed on the light-receiving surface of the semiconductor substrate in a matrix and is divided into pixels, and the photodiode is formed on the semiconductor substrate. A signal reading unit that reads a signal charge that is generated and accumulated or a voltage corresponding to the signal charge, an insulating film that is formed on the semiconductor substrate so as to cover the photodiode, and includes an optical waveguide; and on the insulating film A green pixel having a formed color filter and an on-chip lens formed on the color filter, and having a green color filter as the color filter A first pixel group having four pixels arranged in two pixels in the horizontal direction and the vertical direction, and a second pixel having four pixels in which blue pixels having a blue color filter are arranged in two pixels in the horizontal direction and the vertical direction And a third pixel group having four pixels in which red pixels each having a red color filter are arranged in two horizontal and vertical directions, and the first pixel group and the second pixel group are horizontal. A fourth pixel set having a configuration alternately arranged in a direction and a fifth pixel set having a configuration in which the first pixel set and the third pixel set are alternately arranged in a horizontal high school are equivalent to the first pixel set. The on-chip lens is laid out such that the first pixel group, the second pixel group, and the third pixel group are alternately arranged in the vertical direction so as to be shifted in the horizontal direction. One on-chip for each Lens is formed.

  The camera according to the present invention includes a solid-state imaging device in which a plurality of pixels are integrated on a light receiving surface, an optical system that guides incident light to an imaging unit of the solid-state imaging device, and signal processing that processes an output signal of the solid-state imaging device. Circuit. Here, the solid-state imaging device is a solid-state imaging device according to the present invention having the above-described configuration.

  In the solid-state imaging device according to the present invention, the overlap of the color filters at the pixel boundary in the first pixel group composed of at least green pixels can be reduced, the invalid area can be reduced, and the sensitivity can be increased.

  According to the method for manufacturing a solid-state imaging device of the present invention, there is provided a solid-state imaging device which can reduce the ineffective area by reducing the overlap of the color filters at the pixel boundary in the first pixel group composed of at least green pixels, thereby reducing the ineffective area. Can be manufactured.

  According to the camera of the present invention, in the solid-state imaging device to be configured, the overlap of the color filters at the pixel boundary in the first pixel group composed of at least green pixels is reduced, the invalid area can be reduced, and the sensitivity can be increased. .

1A and 1B are plan views showing the layout of pixels and on-chip lenses of the solid-state imaging device according to the first embodiment of the present invention. 2A and 2B are schematic cross-sectional views of the solid-state imaging device according to the first embodiment of the present invention. 3A and 3B are cross-sectional views illustrating the configuration of the color filter according to the first embodiment of the present invention. 4A and 4B are plan views showing the layout of pixels and on-chip lenses of the solid-state imaging device according to the first modification of the present invention. FIGS. 5A and 5B are plan views showing the layout of pixels and on-chip lenses of a solid-state imaging device according to the second modification of the present invention. FIGS. 6A and 6B are plan views showing the layout of pixels and on-chip lenses of the solid-state imaging device according to the second embodiment of the present invention. FIG. 7A is a plan view showing a layout of pixels and on-chip lenses of a solid-state imaging device according to the third embodiment of the present invention, and FIG. 7B is an equivalent circuit diagram of the pixels. FIG. 8 is a plan view showing a layout of pixels and on-chip lenses according to the third embodiment of the present invention. FIG. 9 is a plan view showing a layout of pixels and on-chip lenses of a solid-state imaging device according to the fourth embodiment of the present invention. FIG. 10 is a plan view showing a layout of pixels of a solid-state imaging device according to the fifth embodiment of the present invention. FIG. 11 is a plan view showing a layout of pixels according to the first embodiment of the present invention. FIG. 12 is a plan view showing a layout of pixels according to the second embodiment of the present invention. FIG. 13 is a plan view showing a layout of pixels according to the third embodiment of the present invention. FIG. 14 is a plan view showing a layout of pixels according to the fourth embodiment of the present invention. FIG. 15 is a schematic configuration diagram of a camera according to the sixth embodiment of the present invention.

  Embodiments of a solid-state imaging device, a manufacturing method thereof, and a camera including the solid-state imaging device according to the present invention will be described below with reference to the drawings.

The description will be given in the following order.
1. First Embodiment (a configuration having four pixels in which green pixels are arranged two by two in the horizontal and vertical directions)
2. First modification example3. Second Modification Example 4. Second Embodiment (a configuration having four pixels in which two pixels are arranged in the horizontal direction and the vertical direction, respectively)
5. Third Embodiment (configuration in which floating diffusion is shared between pixels)
6). Fourth embodiment (configuration of upper layer wiring)
7). Fifth embodiment (a configuration in which a plurality of green pixels are arranged in the first direction and the second direction)
8). First Example 9 Second Embodiment 10. Third embodiment 11. Fourth embodiment 12. Sixth embodiment (camera using a solid-state imaging device)

<First Embodiment>
[Overall configuration of solid-state imaging device]
FIG. 1A is a plan view showing a pixel layout of the solid-state imaging device according to the present embodiment.
In the solid-state imaging device according to the present embodiment, photodiodes are formed separately for each pixel arranged in a matrix on the light receiving surface of a semiconductor substrate. In addition, a signal reading unit that reads a signal charge generated or accumulated in the photodiode or a voltage corresponding to the signal charge is formed on the semiconductor substrate. In addition, an insulating film including an optical waveguide is formed on the semiconductor substrate so as to cover the photodiode, a color filter is formed on the insulating film, and an on-chip lens is formed on the color filter.

[Color filter and on-chip lens layout]
For example, the color filter has a layout shown in FIG.
That is, the first pixel group 1 and the second pixel group 2 are provided. The first pixel set 1 has four pixels in which two green pixels (G) each having a green color filter are arranged in the horizontal direction and the vertical direction. The second pixel set 2 has four pixels arranged in two horizontal and vertical directions, and a red pixel (R) having a red color filter and a blue pixel (B) having a blue color filter are paired. Two pixels are arranged and arranged at the corner. The first pixel group 1 and the second pixel group 2 are laid out so as to be alternately arranged in the horizontal direction and the vertical direction.
The layout shown in FIG. 1A can also be referred to as a configuration in which the pixel layout indicated by the broken line A is repeatedly arranged in the horizontal direction and the vertical direction.

FIG. 1B is a plan view showing a pixel layout and an on-chip lens layout of the solid-state imaging device according to the present embodiment. As described above, in the solid-state imaging device according to this embodiment, the on-chip lens is formed on the color filter.
As the on-chip lens, for example, as shown in FIG. 1B, one on-chip lens OCL _G is formed for the first pixel set 1 as an on-chip lens.
Further, as an on-chip lens, one on-chip lens (OCL _B , OCL _R ) is formed for each pixel with respect to the second pixel set 2. The diameter of one on-chip lens (OCL _B , OCL _R ) for the pixels in the second pixel set 2 is different from the diameter of one on-chip lens OCL _G for the first pixel set 1.
Alternatively, as the above-described on-chip lens, for example, in the first pixel group 1 as well, as in the second pixel group 2, one on-chip lens may be formed for each pixel.

[Layer structure of solid-state imaging device]
2A and 2B are schematic cross-sectional views of the solid-state imaging device according to the present embodiment. Here, a cross section crossing two green pixels (G1, G2) and one blue pixel B and red pixel R is shown.
FIG. 2A shows a case where one on-chip lens is formed for the first pixel group 1.
In the solid-state imaging device according to the present embodiment, for example, an element isolation insulating film 11 that separates pixels is formed on a semiconductor substrate 10, and a semiconductor region 12 that includes a photodiode is formed in a region partitioned by the element isolation insulating film 11. Is formed. In this manner, pixels are formed in a matrix on the light receiving surface of the semiconductor substrate.
In addition, a signal reading unit (not shown) that reads a signal charge generated and accumulated in the photodiode or a voltage corresponding to the signal charge is formed on the semiconductor substrate. For example, in a CMOS image sensor, this is composed of a MOS transistor called a floating diffusion and a source follower. The CCD image sensor is composed of a CCD transfer path and the like.

A first insulating film 13 is formed on the semiconductor substrate so as to cover the photodiode. Above the region where the element isolation insulating film 11 is formed, a conductive layer 14 constituting an upper wiring is embedded in the first insulating film 13.
An opening 15 is formed in the first insulating film 13 above the photodiode. A second insulating film 16 is formed so as to fill the opening 15.
The second insulating film 16 is made of a material having a higher refractive index than that of the first insulating film 13. For example, the first insulating film 13 is made of silicon oxide, silicon nitride, silicon carbide, a stacked body thereof, or the like. The second insulating film 16 is made of a high refractive index resin such as a siloxane resin or polyimide, and a siloxane resin is particularly preferable.
Further, the above-mentioned resin contains metal oxide fine particles such as titanium oxide, tantalum oxide, niobium oxide, tungsten oxide, zirconium oxide, zinc oxide, indium oxide, hafnium oxide, and the refractive index is increased. .
With the configuration in which the insulating film (second insulating film 16) having a high refractive index is embedded in the opening 14 of the insulating film (first insulating film 12) having a low refractive index as described above, light incident from above is applied to the photodiode. A guiding optical waveguide is formed.

Further, color filters (17B, 17G, 17R) are formed on the insulating films (12, 16), and an on-chip lens 18 is formed on the color filters (17B, 17G, 17R). As shown in FIG. 2A, one on-chip lens 18 is formed for each group of the first pixel group 1 including green pixels (G1, G2).
Here, as shown in FIG. 2A, one optical waveguide is formed for each group of the first pixel group 1 as an optical waveguide of the green pixels (G1, G2).
For example, as the optical waveguide, one optical waveguide is formed for each pixel with respect to the second pixel set, and one aperture of the optical waveguide for the pixels of the second pixel set 2 is an optical waveguide for the first pixel set 1. This is different from the one opening diameter.

On the other hand, FIG. 2B shows a case where one on-chip lens is formed for each pixel in the first pixel set 1 as well.
The difference from FIG. 2A is that one on-chip lens in each of the green pixels (G1, G2) is formed for each pixel. The rest is substantially the same as FIG.

[Color filter configuration]
3A and 3B are cross-sectional views illustrating the configuration of the color filter according to this embodiment.
FIG. 3A shows a cross section of a color filter of a solid-state imaging device according to a conventional example, and includes two blue pixels (B1, B2), two red pixels (R1, R2), and one green pixel G1. A cross section is shown.
Overlap of the color filter of the green pixel G1 and the blue pixel B2 and overlap of the color filter of the green pixel G1 and the red pixel R1 occur, resulting in an invalid area. Here, the vertical relationship of the overlap varies depending on the order in which the color filters are formed. Since the color filter is formed so that part of the color filter overlaps at the boundary of the pixels, the above-described configuration is employed.

On the other hand, FIG. 3B shows a cross section of the color filter of the solid-state imaging device according to the present embodiment, two blue pixels (B1, B2), two green pixels (G1, G2), and one red. A cross section across the pixel R1 is shown.
As described above, in the color filter of this embodiment, four green pixels are adjacent to each other to form the first pixel set. Therefore, there is no overlap of the color filters in the first pixel set, and the area of the invalid region is reduced. Can be reduced to improve sensitivity.
In particular, green light is light in a region having high sensitivity to human eyes, and luminance data of obtained image data can be improved by increasing the sensitivity of green pixels, for example.

  Further, as described above, one optical waveguide is formed for each group of the first pixel group 1 as the optical waveguide of the green pixel. Thereby, a large opening diameter of the optical waveguide can be secured, and the light collecting effect can be enhanced.

[Method for Manufacturing Solid-State Imaging Device]
First, a photodiode divided for each pixel arranged in a matrix on a light receiving surface of a semiconductor substrate and a signal reading unit that reads a signal charge generated and accumulated in the photodiode or a voltage corresponding to the signal charge are formed. Next, an insulating film including an optical waveguide is formed on the semiconductor substrate so as to cover the photodiode. Next, a color filter is formed on the insulating film, and an on-chip lens is formed on the color filter.
Here, in the step of forming the color filter, a layout having a first pixel group and a second pixel group is used. The first pixel group has four pixels in which two green pixels each having a green color filter are arranged in the horizontal direction and the vertical direction. The second pixel group is a second pixel group having four pixels arranged in two pixels in the horizontal direction and the vertical direction, and a red pixel having a red color filter and a blue pixel having a blue color filter are diagonally arranged. Two pixels are arranged and arranged. The first pixel group and the second pixel group are laid out so as to be alternately arranged in the horizontal direction and the vertical direction.
As described above, four green pixels are adjacent to each other to form a first pixel group, and color filters in the first pixel group are not overlapped, and the area of the invalid region is reduced to improve sensitivity. Can be manufactured.

  In particular, as an optical waveguide for a green pixel, one optical waveguide is formed for each set of the first pixel group 1, so that a large aperture diameter of the optical waveguide can be secured, and a light collecting effect is enhanced. Can do.

<First Modification>
[Color filter and on-chip lens layout]
FIG. 4A is a plan view showing a pixel layout of the solid-state imaging device according to this modification.
The solid-state imaging device according to this embodiment is substantially the same as the first embodiment except that the positions of the red pixel (R) having a red color filter and the blue pixel (B) having a blue color filter are interchanged. It is the same as the form.
That is, the first pixel group 1 and the second pixel group 2 are provided. The first pixel set 1 has four pixels in which two green pixels (G) each having a green color filter are arranged in the horizontal direction and the vertical direction. The second pixel set 2 has four pixels arranged in two horizontal and vertical directions, and a red pixel (R) having a red color filter and a blue pixel (B) having a blue color filter are paired. Two pixels are arranged and arranged at the corner. The first pixel group 1 and the second pixel group 2 are laid out so as to be alternately arranged in the horizontal direction and the vertical direction.
The layout shown in FIG. 4A can also be referred to as a configuration in which the pixel layout indicated by the broken line A is repeatedly arranged in the horizontal direction and the vertical direction.

FIG. 4B is a plan view showing a pixel layout and an on-chip lens layout of the solid-state imaging device according to this modification. In the solid-state imaging device according to this modification, an on-chip lens is formed on the color filter.
As the on-chip lens, for example, as shown in FIG. 4B, one on-chip lens OCL _G is formed for the first pixel set 1 as an on-chip lens.
Further, as an on-chip lens, one on-chip lens (OCL _B , OCL _R ) is formed for each pixel with respect to the second pixel set 2. The diameter of one on-chip lens (OCL _B , OCL _R ) for the pixels in the second pixel set 2 is different from the diameter of one on-chip lens OCL _G for the first pixel set 1.

For example, as an optical waveguide of the green pixel (G), one optical waveguide is formed for each group of the first pixel group 1.
On the other hand, for example, as an optical waveguide, one optical waveguide is formed for each pixel with respect to the second pixel set, and one aperture of the optical waveguide with respect to the pixels of the second pixel set 2 has a light guide for the first pixel set. It is different from one opening diameter of the waveguide.

As described above, in the color filter of the present modification, the first pixel set is configured with four green pixels adjacent to each other, so that there is no overlap of the color filters in the first pixel set, and the area of the invalid region Can be reduced to improve sensitivity.
In particular, green light is light in a region having high sensitivity to human eyes, and luminance data of obtained image data can be improved by increasing the sensitivity of green pixels, for example.
In addition, one optical waveguide is formed for each group of the first pixel group 1 as an optical waveguide of the green pixel. Thereby, a large opening diameter of the optical waveguide can be secured, and the light collecting effect can be enhanced.

<Second Modification>
[Color filter and on-chip lens layout]
FIG. 5A is a plan view showing a pixel layout of the solid-state imaging device according to this modification.
The solid-state imaging device according to this embodiment is substantially the same except that the positions of red pixels (R) having some red color filters and blue pixels (B) having blue color filters are interchanged. This is the same as in the first embodiment.
That is, the first pixel group 1 and the second pixel group 2 are provided. The first pixel set 1 has four pixels in which two green pixels (G) each having a green color filter are arranged in the horizontal direction and the vertical direction. The second pixel set 2 has four pixels arranged in two horizontal and vertical directions, and a red pixel (R) having a red color filter and a blue pixel (B) having a blue color filter are paired. Two pixels are arranged and arranged at the corner. The first pixel group 1 and the second pixel group 2 are laid out so as to be alternately arranged in the horizontal direction and the vertical direction.

As described above, the positions of the red pixel (R) and the blue pixel (B) are partially different from those of the first embodiment. As shown in FIG. 5A, the red pixel (R) And blue pixels (B) are arranged obliquely.
The layout shown in FIG. 5A can also be referred to as a configuration in which the pixel layout indicated by the broken line A is repeatedly arranged in the horizontal direction and the vertical direction.

FIG. 5B is a plan view showing a pixel layout and an on-chip lens layout of the solid-state imaging device according to this modification. In the solid-state imaging device according to this modification, an on-chip lens is formed on the color filter.
As the on-chip lens, for example, as shown in FIG. 5B, one on-chip lens OCL _G is formed for the first pixel group 1 as an on-chip lens.
Further, as an on-chip lens, one on-chip lens (OCL _B , OCL _R ) is formed for each pixel with respect to the second pixel set 2. The diameter of one on-chip lens (OCL _B , OCL _R ) for the pixels in the second pixel set 2 is different from the diameter of one on-chip lens OCL _G for the first pixel set 1.

For example, as an optical waveguide of the green pixel (G), one optical waveguide is formed for each group of the first pixel group 1.
On the other hand, for example, as an optical waveguide, one optical waveguide is formed for each pixel with respect to the second pixel set, and one aperture of the optical waveguide with respect to the pixels of the second pixel set 2 has a light guide for the first pixel set. It is different from one opening diameter of the waveguide.

As described above, in the color filter of the present modification, the first pixel set is configured with four green pixels adjacent to each other, so that there is no overlap of the color filters in the first pixel set, and the area of the invalid region Can be reduced to improve sensitivity.
In particular, green light is light in a region having high sensitivity to human eyes, and luminance data of obtained image data can be improved by increasing the sensitivity of green pixels, for example.
In addition, one optical waveguide is formed for each group of the first pixel group 1 as an optical waveguide of the green pixel. Thereby, a large opening diameter of the optical waveguide can be secured, and the light collecting effect can be enhanced.

Second Embodiment
[Color filter and on-chip lens layout]
FIG. 6A is a plan view showing a pixel layout of the solid-state imaging device according to the present embodiment.
The solid-state imaging device according to this embodiment is substantially the same as that of the first embodiment except for the configuration of a color filter, an on-chip lens, and an optical waveguide.
As a color filter, the first pixel group 1, the second pixel group 2, and the third pixel group 3 are provided. The first pixel set 1 has four pixels in which two green pixels each having a green color filter are arranged in the horizontal direction and the vertical direction. The second pixel set 2 has four pixels in which two blue pixels having a blue color filter are arranged in a horizontal direction and a vertical direction. The third pixel group 3 has four pixels in which red pixels having a red color filter are arranged in two horizontal and vertical directions. Here, a fourth pixel group in which the first pixel group and the second pixel group are alternately arranged in the horizontal direction is configured, and the first pixel group and the third pixel group are alternately arranged in the horizontal direction to form the fifth pixel. A set is made up. The fourth pixel group and the fifth pixel group are laid out so as to be alternately arranged in the vertical direction so as to be shifted in the horizontal direction by the first pixel group.
The layout shown in FIG. 6A can also be referred to as a configuration in which the pixel layout indicated by the broken line A is repeatedly arranged in the horizontal direction and the vertical direction.

FIG. 6B is a plan view showing a pixel layout and an on-chip lens layout of the solid-state imaging device according to the present embodiment. In the solid-state imaging device according to the present embodiment, an on-chip lens is formed on the color filter.
As the on-chip lens, for example, as shown in FIG. 6B, one on-chip lens OCL _G is formed for the first pixel set 1 as an on-chip lens.
As the on-chip lens, one on-chip lens (OCL _B , OCL _R ) is formed for each of the second pixel group 2 and the third pixel group 3. The diameter of one on-chip lens (OCL _B , OCL _R ) for the pixels of the second pixel group 2 and the third pixel group 3 is equivalent to that of the on-chip lens OCL _G for the first pixel group 1.

For example, as an optical waveguide of the green pixel (G), one optical waveguide is formed for each group of the first pixel group 1.
Further, for example, as the optical waveguide, one optical waveguide is formed for each of the second pixel group 2 and the third pixel group 3, and the light guide for each of the second pixel group 2 and the third pixel group 3 is performed. One opening diameter of the waveguide is equal to one opening diameter of the optical waveguide for the first pixel set 1.

As described above, in the color filter of this embodiment, four green pixels are adjacent to each other to form the first pixel set. Therefore, there is no overlap of the color filters in the first pixel set, and the area of the invalid region is reduced. Can be reduced to improve sensitivity. Similarly, the blue pixel and the red pixel are adjacent to each other so that the second pixel group and the third pixel group are formed, so that there is no overlap of the color filters in the second pixel group and the third pixel group. The area can be reduced and the sensitivity can be improved.
In particular, green light is light in a region having high sensitivity to human eyes, and luminance data of obtained image data can be improved by increasing the sensitivity of green pixels, for example.
In addition, one optical waveguide is formed for each of the first pixel group, the second pixel group 2, and the third pixel group 3 as the optical waveguides of the green pixel, the blue pixel, and the red pixel. Thereby, a large opening diameter of the optical waveguide can be secured, and the light collecting effect can be enhanced.

[Method for Manufacturing Solid-State Imaging Device]
First, a photodiode divided for each pixel arranged in a matrix on a light receiving surface of a semiconductor substrate and a signal reading unit that reads a signal charge generated and accumulated in the photodiode or a voltage corresponding to the signal charge are formed. Next, an insulating film including an optical waveguide is formed on the semiconductor substrate so as to cover the photodiode. Next, a color filter is formed on the insulating film, and an on-chip lens is formed on the color filter.
Here, in the step of forming the color filter, a layout having the first pixel group, the second pixel group, and the third pixel group is used. The first pixel group has four pixels in which two green pixels each having a green color filter are arranged in the horizontal direction and the vertical direction as color filters. The second pixel group includes four pixels in which two blue pixels having a blue color filter are arranged in a horizontal direction and a vertical direction. The third pixel set has four pixels in which red pixels having a red color filter are arranged in two pixels in the horizontal direction and the vertical direction. A fourth pixel group having a configuration in which the first pixel group and the second pixel group are alternately arranged in the horizontal direction, and a fifth pixel group having a configuration in which the first pixel group and the third pixel group are alternately arranged in the horizontal direction. However, they are laid out so as to be alternately arranged in the vertical direction so as to be shifted in the horizontal direction by the first pixel group.
In the step of forming the on-chip lens, one on-chip lens is formed as the on-chip lens for each of the first pixel group, the second pixel group, and the third pixel group.
As described above, since the first pixel set is formed by adjoining four green pixels, there is no overlap of color filters in the first pixel set, and the area of the ineffective region is reduced to improve sensitivity. A solid-state imaging device can be manufactured. In particular, the blue pixel and the red pixel are similarly adjacent to each other to form the second pixel group and the third pixel group, so that there is no overlap of the color filters in the second pixel group and the third pixel group, and the area of the ineffective region is reduced. It can be reduced to improve sensitivity.

  In addition, by forming one optical waveguide for each of the first pixel group 1 as the optical waveguide of the green pixel, a large aperture diameter of the optical waveguide can be secured, and the light collection effect is enhanced. Can do. Similarly, in the blue pixel and the red pixel, by forming the optical waveguide shared by the four pixels, it is possible to secure a large aperture diameter of the optical waveguide and enhance the light collecting effect.

<Third Embodiment>
[Configuration to share floating diffusion]
FIG. 7A is a plan view showing a pixel layout of the solid-state imaging device according to the present embodiment.
The solid-state imaging device according to the present embodiment is a CMOS image sensor.
The layout of the pixels and the on-chip lens is the same as in the first embodiment, but this may be the same as in the first modification, the second modification, or the second embodiment.
In the CMOS image sensor, for example, a MOS transistor called a floating diffusion and a source follower is provided in each pixel as described later. Here, in the present embodiment, the circuit after the floating diffusion is shared among a plurality of pixels.
As shown in FIG. 7A, for example, a floating diffusion FD is formed between four pixels of two green pixels G, one blue pixel B, and one red pixel R. The above four pixels are connected to the floating diffusion through the respective transfer transistors. That is, one floating diffusion is shared by four pixels.

FIG. 7B is an equivalent circuit diagram of a pixel when a plurality of pixels share a floating diffusion in the solid-state imaging device according to the present embodiment. FIG. 7B shows a case in which one floating diffusion is shared by two pixels.
For example, a photodiode 33 is formed in one pixel 31 and is connected to the floating diffusion FD via the transfer transistor 35.
Similarly, in the other pixel 32, a photodiode 34 is formed and connected to the floating diffusion FD via the transfer transistor 36.
On / off of each transfer transistor (35, 36) is controlled by the control line (42, 43) connected to the gate of the transfer transistor (35, 36), and the signal charge accumulated in the photodiode (33, 34). Is transferred to the floating diffusion FD.
A gate electrode of an amplification transistor 38 called a source follower is connected to the floating diffusion FD, and an output corresponding to the amount of charge in the floating diffusion FD is output from the output line 40.
In addition, a reset transistor 37 is connected to the floating diffusion FD, and signal charges in the floating diffusion after the reading is completed by turning on / off the reset transistor 37 can be reset.
In the above, by performing the transfer by the transfer transistor, the signal reading, and the reset operation in order for each pixel, the signal of each pixel can be obtained even if the floating diffusion is shared.

[Photodiode layout according to on-chip lens size]
FIG. 8 is an enlarged view of four pixels in which floating diffusion FD is formed between four pixels of two green pixels G, one blue pixel B, and one red pixel R in FIG. It is a top view. Each pixel is provided with a photodiode (PD _G , PD _B , PD _R ).
The photodiodes (PD _G , PD _B , PD _R ) are connected to the floating diffusion FD via transfer transistors having transfer gates (G _G , G _B , G _R ). One floating diffusion is shared by four pixels.

In the above configuration, on-chip lenses (OCL _B , OCL _R ) are formed for each pixel in the blue pixel B and the red pixel R. On the other hand, in the green pixel G, one on-chip lens OCL _G shared by a pixel group composed of four green pixels _G is formed. The on-chip lens has a higher light collection efficiency at the center, and the light collection efficiency decreases as the distance from the periphery increases.
The photodiodes (PD _B , PD _R ) in the blue pixel B and the red pixel R are preferably provided at the center of the blue pixel B and the red pixel R.
On the other hand, for example, as shown in FIG. 8, inboard photodiode PD _G is a blue pixel B and a photodiode _(PD B, PD _R) in the red pixel R on the center of the pixel than the chip lens OCL _G in the green pixel G It is preferable to provide at the position.
If you are misaligned photodiode by pixel as described above, it is preferable that the layout of the shape which is stretched in the photodiode PD _G in the green pixel G of the floating diffusion FD as shown in FIG. Transfer gates (G _G , G _B , G _R ) are formed in a region between the floating diffusion FD having the above shape and the photodiodes (PD _G , PD _B , PD _R ), and transfer transistors are configured. .

  Other than the above, the second embodiment is the same as the first embodiment, but this can be the same as the first modification, the second modification, or the second embodiment.

As described above, in the color filter of this embodiment, four green pixels are adjacent to each other to form the first pixel set. Therefore, there is no overlap of the color filters in the first pixel set, and the area of the invalid region is reduced. Can be reduced to improve sensitivity. In particular, green light is light in a region having high sensitivity to human eyes, and luminance data of obtained image data can be improved by increasing the sensitivity of green pixels, for example.
Further, when one optical waveguide is formed for the first pixel group as the optical waveguide of the green pixel, a large aperture diameter of the optical waveguide can be ensured, and the light condensing effect can be enhanced.

<Fourth embodiment>
[Configuration of upper layer wiring]
FIG. 9 is a plan view showing a pixel layout of the solid-state imaging device according to the present embodiment.
The layout of the pixels and the on-chip lens is the same as in the first embodiment, but this may be the same as in the first modification, the second modification, or the second embodiment. In the case of a CMOS image sensor, the configuration of the third embodiment may be used.
For example, as shown in FIG. 2A of the first embodiment, a first insulating film 13 is formed on a semiconductor substrate so as to cover a photodiode. Above the region where the element isolation insulating film 11 is formed, a conductive layer 14 constituting an upper wiring is embedded in the first insulating film 13.
The conductive layer 14 is made of a metal that does not transmit light or polysilicon that has low light transmittance. Therefore, conventionally, if it is a boundary part of a pixel, it does not disturb the incidence of light on the photodiode of the pixel. However, in this embodiment, four green pixels are adjacent to each other to form the first pixel set, and the conductive layer is incident on the light even if the position penetrating the first pixel set is a pixel boundary. There is a possibility of disturbing.
Therefore, in the present embodiment, as shown in FIG. 9, the conductive layer W serving as the upper wiring is disposed at a position that does not penetrate the first pixel group. Specifically, it is arranged at the boundary of each of the first pixel group and the second pixel group.
With the above configuration, it is possible to reduce the possibility that the light incident on the photodiode is hindered by the conductive layer W serving as the upper wiring.
About the thing except the above, it can be the same as that of said each embodiment or modification.

<Fifth Embodiment>
[Configuration in which a plurality of green pixels are arranged in the first direction and the second direction]
FIG. 10 is a plan view showing a pixel layout of the solid-state imaging device according to the present embodiment.
The green pixel G, blue pixel B, and red pixel R are arranged as shown in FIG. Each pixel is arranged in an oblique first direction and second direction inclined 45 degrees from a general horizontal direction and a vertical direction.
Here, as the color filter, a plurality of pixels are arranged in the first direction and the second direction in the green pixel G having a green color filter. The blue pixel B and the red pixel R are surrounded by the green pixel G in all directions.
In addition, an on-chip lens shared by a plurality of green pixels is formed as the on-chip lens. Any number of pixels may be used as long as they are a plurality of pixels, and they may be separated at an appropriate location.
The optical waveguide of the green pixel may be formed so as to communicate with a plurality of pixels.

  The solid-state imaging device having the above-described layout can increase the size of each pixel without degrading the quality of the obtained image data, and can realize an improvement in sensitivity.

<First embodiment>
According to the first embodiment, a solid-state imaging device having pixels with a layout as shown in FIG. 11 is assumed.
As shown in FIG. 11, green pixels G, blue pixels B, and red pixels R are laid out from B11 to G68.
In the above configuration, the blue signal and the red signal in the green pixels G35, G36, G45, and G46 can be obtained by calculation from the blue signal and red signal data of the pixels existing around each pixel as follows. .

[Equation 1]
R36 = (R16 + R56) / 2, R46 = (R44 + R48) / 2
B36 = (B34 + B38) / 2, B46 = (B26 + B66) / 2
R35 = (R33 + R37) / 2, R45 = (R25 + R65) / 2
B35 = (B15 + B55) / 2, B45 = (B43 + B47) / 2

  Further, the green signals in the red pixels R33 and R44 and the blue pixels B34 and B43 can be obtained by calculation from the green signal data of the pixels existing around each pixel as follows.

[Equation 2]
G34 = (G14 + G54 + G32 + G36) / 4, G44 = (G24 + G64 + G42 + G46) / 4
G33 = (G13 + G53 + G31 + G35) / 4, G43 = (G23 + G63 + G41 + G45) / 4

<Second embodiment>
According to the first modification, a solid-state imaging device having pixels with a layout as shown in FIG. 12 is assumed.
As shown in FIG. 12, green pixels G, blue pixels B, and red pixels R are laid out from R11 to G68.
In the above configuration, the blue signal and the red signal in the green pixels G35, G36, G45, and G46 can be obtained by calculation from the blue signal and red signal data of the pixels existing around each pixel as follows. .

[Equation 3]
R36 = (R34 + R38) / 2, R46 = (R26 + R66) / 2
B36 = (B16 + B56) / 2, B46 = (B44 + B48) / 2
R35 = (R15 + R55) / 2, R45 = (R43 + R47) / 2
B35 = (B33 + B37) / 2, B45 = (B25 + B65) / 2

  Further, the green signals in the blue pixels B33 and B44 and the red pixels R34 and R43 can be obtained by calculation from the green signal data of the pixels existing around each pixel as follows.

[Equation 4]
G34 = (G14 + G54 + G32 + G36) / 4, G44 = (G24 + G64 + G42 + G46) / 4
G33 = (G13 + G53 + G31 + G35) / 4, G43 = (G23 + G63 + G41 + G45) / 4

<Third embodiment>
According to the second modification, a solid-state imaging device having pixels with a layout as shown in FIG. 13 is assumed.
As shown in FIG. 13, green pixels G, blue pixels B, and red pixels R are laid out from R11 to G68.
In the above configuration, the blue signal and the red signal in the green pixels G35, G36, G45, and G46 can be obtained by calculation from the blue signal and red signal data of the pixels existing around each pixel as follows. .

[Equation 5]
B36 = (B25 + B47) / 2, R46 = (R37 + R55) / 2
R35 = (R26 + R44) / 2, B45 = (B34 + B56) / 2

  Further, the green signals in the red pixels R33 and R44 and the blue pixels B34 and B43 can be obtained by calculation from the green signal data of the pixels existing around each pixel as follows.

[Equation 6]
G34 = (G14 + G54 + G32 + G36) / 4, G44 = (G24 + G64 + G42 + G46) / 4
G33 = (G13 + G53 + G31 + G35) / 4, G43 = (G23 + G63 + G41 + G45) / 4

<Fourth embodiment>
According to the second embodiment, a solid-state imaging device having pixels with a layout as shown in FIG. 14 is assumed.
As shown in FIG. 14, green pixels G, blue pixels B, and red pixels R are laid out from R11 to G68.
In the above configuration, the blue signal and the red signal in the green pixels G35, G36, G45, and G46 can be obtained by calculation from the blue signal and red signal data of the pixels existing around each pixel as follows. .

[Equation 7]
R36 = (R16 + R56) / 2, R46 = (R44 + R48) / 2
B36 = (B34 + B38) / 2, B46 = (B26 + B66) / 2
R35 = (R33 + R37) / 2, R45 = (R25 + R65) / 2
B35 = (B15 + B55) / 2, B45 = (B43 + B47) / 2

  In addition, the green signals in the blue pixels B33, B34, B43, and B44 can be obtained by calculation from the green signal data of the pixels existing around each pixel as follows.

[Equation 6]
G34 = (G14 + G54 + G32 + G36) / 4, G44 = (G24 + G64 + G42 + G46) / 4
G33 = (G13 + G53 + G31 + G35) / 4, G43 = (G23 + G63 + G41 + G45) / 4

<Sixth Embodiment>
[Camera using solid-state imaging device]
FIG. 15 is a schematic configuration diagram of a camera according to the present embodiment.
A solid-state imaging device 50 in which a plurality of pixels are integrated, an optical system 51, and a signal processing circuit 53 are provided.
In the present embodiment, the solid-state imaging device 50 includes the solid-state imaging device according to any one of the first to fifth embodiments and the first to second modifications.

The optical system 51 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 50. Thereby, in the photodiode which comprises each pixel on the imaging surface of the solid-state imaging device 50, it converts into a signal charge according to incident light quantity, and the corresponding signal charge is accumulate | stored for a fixed period.
The accumulated signal charge is taken out as an output signal Vout through, for example, a CCD charge transfer path.
The signal processing circuit 53 performs various signal processing on the output signal Vout of the solid-state imaging device 50 and outputs it as a video signal.
According to the camera of the present embodiment, color shading characteristics and spectral characteristics can be improved without causing a decrease in light collection rate and sensitivity of oblique incident light, and a microlens is formed by a simple method and process. It is possible.

The present invention is not limited to the above description.
For example, in the embodiment, the present invention can be applied to both a CMOS sensor and a CCD element.
In addition, various modifications can be made without departing from the scope of the present invention.

The solid-state imaging device of the present invention can be applied to a solid-state imaging device mounted on a CMOS camera or a CCD camera.
The camera of the present invention can be applied to a camera equipped with a solid-state imaging device such as a CMOS camera or a CCD camera.

DESCRIPTION OF SYMBOLS 1 ... 1st pixel group, 2 ... 2nd pixel group, 3 ... 3rd pixel group, 10 ... Semiconductor substrate, 11 ... Element isolation insulating film, 12 ... Semiconductor region, 13 ... 1st insulating film, 14 ... Conductive layer, DESCRIPTION OF SYMBOLS 15 ... Opening part, 16 ... 2nd insulating film, 17B, 17G, 17R ... Color filter, 18 ... On-chip lens, 31, 32 ... Pixel, 33, 34 photodiode, 35, 36 ... Transfer transistor, 37 ... Reset transistor 38 ... amplifying transistor, 39 ... front selection signal wiring, 40 ... output line, 41, 42, 43 ... control line, 50 ... solid-state imaging device, 51 ... optical system, 53 ... signal processing circuit, B ... blue pixel, G ... Green pixel, R ... Red pixel, OCL _B , OCL _G , OCL _R ... On-chip lens, W ... Conductive layer

Claims (10)

A semiconductor substrate;
A pixel portion in which a plurality of pixels are formed on the semiconductor substrate;
Have
The pixel unit includes a first pixel group including a plurality of pixels and another pixel group.
At least a lens portion in which an on-chip lens is formed for each first pixel group;
A solid-state imaging device in which some of the pixels of the first pixel group and the other pixel group share a floating diffusion. The solid-state imaging device according to claim 1, wherein some of the pixels of the first pixel group and the other pixel group further share an amplifier transistor. The solid-state imaging device according to claim 1, wherein some of the pixels of the first pixel group and the other pixel group further share a reset transistor. The solid-state imaging device according to claim 1, wherein some of the pixels of the first pixel group and the other pixel group further share a selection transistor. The solid-state image sensing device according to claim 1. Each pixel of the pixel part has a photoelectric conversion part which changes light into an electric charge at least. 6. The solid-state imaging device according to claim 5, wherein each pixel of the pixel unit further includes a transfer transistor that transfers charges generated by the photoelectric conversion unit to the floating diffusion. The solid-state imaging device according to claim 1, wherein the on-chip lens is formed on each pixel of the other pixel group. 2. The solid-state imaging device according to claim 1, wherein two or more groups are further formed in the other pixel group, and the on-chip lens is formed on each group. 9. The solid-state imaging device according to claim 7, wherein an optical waveguide or an insulating film is formed between the first pixel group and other pixel group and the on-chip lens. A solid-state imaging device in which a plurality of pixels are integrated on a light receiving surface;
An optical system for guiding incident light to the imaging unit of the solid-state imaging device;
A signal processing circuit for processing an output signal of the solid-state imaging device,
The solid-state imaging device is
A semiconductor substrate;
A pixel portion in which a plurality of pixels are formed on the semiconductor substrate;
Have
The pixel unit includes a first pixel group including a plurality of pixels and another pixel group.
At least a lens portion in which an on-chip lens is formed for each first pixel group;
A camera in which some of the pixels of the first pixel group and the other pixel group share a floating diffusion.

Images