JP2014072350A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2014072350A JP2014072350A JP2012216843A JP2012216843A JP2014072350A JP 2014072350 A JP2014072350 A JP 2014072350A JP 2012216843 A JP2012216843 A JP 2012216843A JP 2012216843 A JP2012216843 A JP 2012216843A JP 2014072350 A JP2014072350 A JP 2014072350A
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- Prior art keywords
- inductor
- lead frame
- semiconductor device
- resin
- mic
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Dc-Dc Converters (AREA)
Abstract
【解決手段】半導体装置10は、リードフレームRMと、リードフレームRMの主面側MFに搭載されたMIC18と、リードフレームRMの裏面側BFに搭載されたインダクタ12と、リードフレームRM、MIC18、およびインダクタ12を樹脂封止する樹脂体14と、を備える。インダクタ12は強磁性体の八角柱状コアであり、インダクタ12の軸Pに対応する位置にMIC18を配置している。
【選択図】図1
Description
図3(a)〜(d)は、本実施形態に係る半導体装置10の製造工程を説明する説明図である。以下、半導体装置10の製造方法について、図3を参照しつつ説明する。なお、以下の製造手順は一例であり、手順を適宜入れ替えてもよい。
12 インダクタ
12i 内周側
12m 本体
14 樹脂体
18 MIC(IC素子)
P 軸(中心軸)
RM リードフレーム
Claims (4)
- リードフレームと、
前記リードフレームの主面側に搭載されたIC素子と、
前記リードフレームの裏面側に搭載されたインダクタと、
前記リードフレーム、前記IC素子、および前記インダクタを樹脂封止する樹脂体と、
を備え、
前記インダクタが強磁性体の八角柱状コアまたは円柱状コアであり、
前記インダクタの軸に対応する位置に前記IC素子を配置したことを特徴とする半導体装置。 - 前記インダクタの中心軸方向から見て、前記インダクタの本体の内周側に前記IC素子を配置したことを特徴とする請求項1記載の半導体装置。
- 前記リードフレームは前記IC素子よりも電気伝導度が大きいことを特徴とする請求項1または2記載の半導体装置。
- 前記IC素子がスイッチング素子であり、
前記スイッチング素子が搭載される前記リードフレームのタブ部を、GNDまたは+Vcc電源電圧に接続したことを特徴とする請求項1〜3のうちいずれか1項記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012216843A JP6065501B2 (ja) | 2012-09-28 | 2012-09-28 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012216843A JP6065501B2 (ja) | 2012-09-28 | 2012-09-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014072350A true JP2014072350A (ja) | 2014-04-21 |
JP6065501B2 JP6065501B2 (ja) | 2017-01-25 |
Family
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JP2012216843A Active JP6065501B2 (ja) | 2012-09-28 | 2012-09-28 | 半導体装置 |
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JP (1) | JP6065501B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015019519A1 (ja) * | 2013-08-07 | 2015-02-12 | パナソニックIpマネジメント株式会社 | Dc-dcコンバータモジュール |
JP2018007414A (ja) * | 2016-07-01 | 2018-01-11 | 株式会社デンソー | Dc−dcコンバータ用半導体モジュール及びパワーコントロールユニット |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6161847U (ja) * | 1984-09-28 | 1986-04-25 | ||
JP2004095751A (ja) * | 2002-08-30 | 2004-03-25 | Toko Inc | 電子回路モジュール |
JP2007173712A (ja) * | 2005-12-26 | 2007-07-05 | Hitachi Metals Ltd | Dc−dcコンバータ |
-
2012
- 2012-09-28 JP JP2012216843A patent/JP6065501B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6161847U (ja) * | 1984-09-28 | 1986-04-25 | ||
JP2004095751A (ja) * | 2002-08-30 | 2004-03-25 | Toko Inc | 電子回路モジュール |
JP2007173712A (ja) * | 2005-12-26 | 2007-07-05 | Hitachi Metals Ltd | Dc−dcコンバータ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015019519A1 (ja) * | 2013-08-07 | 2015-02-12 | パナソニックIpマネジメント株式会社 | Dc-dcコンバータモジュール |
JPWO2015019519A1 (ja) * | 2013-08-07 | 2017-03-02 | パナソニックIpマネジメント株式会社 | Dc−dcコンバータモジュール |
US10033275B2 (en) | 2013-08-07 | 2018-07-24 | Panasonic Intellectual Property Management Co., Ltd. | DC-DC converter with a switching transistor arranged in an area where an inductor overlaps a substrate |
JP2018007414A (ja) * | 2016-07-01 | 2018-01-11 | 株式会社デンソー | Dc−dcコンバータ用半導体モジュール及びパワーコントロールユニット |
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JP6065501B2 (ja) | 2017-01-25 |
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