JP2014053555A - Semiconductor device manufacturing method, semiconductor device and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, a semiconductor device and an electronic apparatus equipped with the semiconductor device, which can expand the scope of material selection to form an insulation layer having high functionality on an organic semiconductor layer.SOLUTION: A semiconductor device manufacturing method comprises: a process of coating a mixed solution of an organic semiconductor material and an insulation layer material; and a process of forming an organic semiconductor layer and an insulation layer which contacts a top face of the organic semiconductor layer by utilizing phase separation.

Description

  The present disclosure relates to a method of manufacturing a semiconductor device such as an organic thin film transistor (organic TFT (Thin Film Transistor)), a semiconductor device, and an electronic apparatus using the semiconductor device.

  Organic semiconductor materials are soluble in solvents, so they can be converted into inks and thin films can be formed by coating and printing, and attention is paid to the fact that vacuum technology is not used and low environmental impact manufacturing technology with high material use efficiency is applicable. (See, for example, Non-Patent Document 1).

C. D. CD Dimitrakopoulos, 1 other, “Organic Thin Film Transistors for Large Area Electronics”, Advanced Materials, January 16, 2002, No. 1 Vol. 14, No. 2, p. 99-117

  On the other hand, because of the characteristics of such an organic semiconductor, it is difficult to carry out the process directly above the organic semiconductor layer because it is damaged by the solvent used in the semiconductor process, and the coating that can be formed on the organic semiconductor layer. In general, the materials are limited to water-soluble or fluorinated solvents. Such materials often have poor material properties and process properties, and in some cases, desired properties cannot always be obtained.

  The present disclosure has been made in view of such a problem, and an object of the present disclosure is to expand a selection range of materials and to manufacture a semiconductor device capable of forming a highly functional insulating layer on an organic semiconductor layer. Another object is to provide a semiconductor device and an electronic device including the semiconductor device.

  A method of manufacturing a semiconductor device according to the present disclosure includes a step of applying a solution in which an organic semiconductor material and an insulating layer material are mixed, an organic semiconductor layer using phase separation, and an insulating layer in contact with the upper surface of the organic semiconductor layer. Forming the step.

  In the method of manufacturing a semiconductor device according to the present disclosure, the organic semiconductor layer and the insulating layer in contact with the upper surface thereof are formed using phase separation. Therefore, after forming the organic semiconductor layer, the insulating layer is formed on the upper surface of the organic semiconductor layer. There is no need to apply a solution of the material. Therefore, it is possible to select a wide range of insulating layer materials having good material properties and processability without being limited to water-soluble or fluorine-based solvents.

  The semiconductor device according to the present disclosure includes an organic semiconductor layer and an insulating layer provided in contact with the upper surface of the organic semiconductor layer, and the organic semiconductor layer and the insulating layer are formed using phase separation.

  In the semiconductor device of the present disclosure, the organic semiconductor layer and the insulating layer in contact with the upper surface thereof are formed by utilizing phase separation. Therefore, the insulating layer is not limited to a water-soluble or fluorinated solvent, and is a good material. It is composed of materials with physical properties and process properties and has high functionality.

  An electronic apparatus according to the present disclosure includes the semiconductor device according to the present disclosure.

  In the electronic device of the present disclosure, an expected operation is performed by the semiconductor device of the present disclosure.

  According to the semiconductor device manufacturing method of the present disclosure, the semiconductor device of the present disclosure, or the electronic apparatus of the present disclosure, the organic semiconductor layer and the insulating layer in contact with the upper surface thereof are formed using phase separation. It is possible to expand the selection range of the insulating layer material and form an insulating layer having high functionality on the organic semiconductor layer.

It is sectional drawing showing the structure of the thin-film transistor which concerns on 1st Embodiment of this indication. FIG. 2 is a cross-sectional view illustrating a method of manufacturing the thin film transistor illustrated in FIG. 1 in order of steps. FIG. 3 is a cross-sectional view illustrating a process following FIG. 2. FIG. 4 is a cross-sectional view illustrating a process following FIG. 3. FIG. 5 is a cross-sectional view illustrating a process following FIG. 4. FIG. 6 is a cross-sectional view illustrating a process following FIG. 5. It is sectional drawing showing the structure of the thin-film transistor which concerns on Example 1 of this indication. FIG. 8 is a cross-sectional view illustrating a method of manufacturing the thin film transistor illustrated in FIG. 7 in order of steps. FIG. 9 is a cross-sectional diagram illustrating a process following the process in FIG. 8. FIG. 10 is a cross-sectional diagram illustrating a process following the process in FIG. 9. FIG. 11 is a cross-sectional diagram illustrating a process following the process in FIG. 10. FIG. 12 is a cross-sectional diagram illustrating a process following the process in FIG. 11. FIG. 13 is a cross-sectional diagram illustrating a process following the process in FIG. 12. FIG. 14 is a cross-sectional diagram illustrating a process following the process in FIG. 13. FIG. 15 is a cross-sectional view illustrating a process following FIG. 14. It is sectional drawing showing the structure of the thin-film transistor which concerns on Example 2 of this indication. FIG. 17 is a cross-sectional view illustrating a method of manufacturing the thin film transistor illustrated in FIG. 16 in order of processes. FIG. 18 is a cross-sectional diagram illustrating a process following the process in FIG. 17. FIG. 19 is a cross-sectional diagram illustrating a process following the process in FIG. 18. FIG. 20 is a cross-sectional diagram illustrating a process following the process in FIG. 19. FIG. 21 is a cross-sectional diagram illustrating a process following the process in FIG. 20. FIG. 22 is a cross-sectional diagram illustrating a process following the process in FIG. 21. FIG. 23 is a cross-sectional diagram illustrating a process following the process in FIG. 22. It is sectional drawing showing the structure of the thin-film transistor which concerns on the modification 1 of this indication. FIG. 25 is a cross-sectional view illustrating a method of manufacturing the thin film transistor illustrated in FIG. 24 in order of steps. FIG. 26 is a cross-sectional diagram illustrating a process following the process in FIG. 25. FIG. 27 is a cross-sectional diagram illustrating a process following the process in FIG. 26. FIG. 28 is a cross-sectional diagram illustrating a process following the process in FIG. 27. FIG. 29 is a cross-sectional diagram illustrating a process following the process in FIG. 28. FIG. 25 is a cross-sectional view illustrating another manufacturing method of the thin film transistor illustrated in FIG. 24 in order of steps. FIG. 31 is a cross-sectional diagram illustrating a process following the process in FIG. 30. FIG. 32 is a cross-sectional diagram illustrating a process following the process in FIG. 31. FIG. 33 is a cross-sectional diagram illustrating a process following the process in FIG. 32. FIG. 34 is a cross-sectional diagram illustrating a process following the process in FIG. 33. It is sectional drawing showing the structure of the thin-film transistor which concerns on the modification 2 of this indication. FIG. 36 is a cross-sectional view illustrating a method of manufacturing the thin film transistor illustrated in FIG. 35 in order of processes. FIG. 37 is a cross-sectional diagram illustrating a process following the process in FIG. 36. FIG. 38 is a cross-sectional diagram illustrating a process following the process in FIG. 37. FIG. 39 is a cross-sectional diagram illustrating a process following the process in FIG. 38. FIG. 40 is a cross-sectional diagram illustrating a process following the process in FIG. 39. FIG. 41 is a cross-sectional diagram illustrating a process following the process in FIG. 40. FIG. 42 is a cross-sectional diagram illustrating a process following the process in FIG. 41. FIG. 43 is a cross-sectional diagram illustrating a process following the process in FIG. 42. FIG. 36 is a cross-sectional view illustrating another method for manufacturing the thin film transistor illustrated in FIG. 35 in order of processes. FIG. 45 is a cross-sectional diagram illustrating a process following the process in FIG. 44. FIG. 46 is a cross-sectional diagram illustrating a process following the process in FIG. 45. FIG. 47 is a cross-sectional diagram illustrating a process following the process in FIG. 46. It is sectional drawing showing the structure of the thin-film transistor which concerns on the modification 3 of this indication. FIG. 49 is a cross-sectional view illustrating a process of a method for manufacturing the thin film transistor illustrated in FIG. 48. It is sectional drawing showing the structure of the thin-film transistor which concerns on the modification 4 of this indication. It is sectional drawing showing the structure of the electronic paper display apparatus which concerns on 2nd Embodiment of this indication. It is sectional drawing showing the structure of the organic electroluminescence display which concerns on 3rd Embodiment of this indication. It is sectional drawing showing the structure of the liquid crystal display device which concerns on 4th Embodiment of this indication. It is a top view showing schematic structure of the module containing the display apparatus of the said embodiment. It is a perspective view showing the external appearance seen from the front side of the application example 1 of the display apparatus of the said embodiment. 10 is a perspective view illustrating an appearance of Application Example 1 viewed from the back side. FIG. 10 is a perspective view illustrating an appearance of Application Example 2 viewed from the front side. FIG. 12 is a perspective view illustrating an appearance of Application Example 2 viewed from the back side. FIG. 12 is a perspective view illustrating an appearance of application example 3. FIG. 14 is a perspective view illustrating an appearance of Application Example 4 viewed from the front side. FIG. 14 is a perspective view illustrating an appearance viewed from the back side of application example 4. FIG. 14 is a perspective view illustrating an appearance of application example 5. FIG. 16 is a perspective view illustrating an appearance of application example 6. FIG. 16 is a front view illustrating an appearance of Application Example 7 in a closed state. FIG. It is a front view showing the appearance of the open state of application example 7.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be given in the following order.
1. First embodiment (thin film transistor; example of forming a two-layer structure including an organic semiconductor layer and an insulating layer in order by phase separation)
2. Example 1 (Thin film transistor; an example of forming a three-layer structure including a lower organic semiconductor layer, an insulating layer, and an upper organic semiconductor layer in this order by phase separation)
3. Example 2 (thin film transistor; an example in which a reverse bilayer structure having an insulating layer and an organic semiconductor layer in order on a blanket is formed by phase separation, and the reverse bilayer structure is transferred to a substrate)
4). Modification 1-4
5. Second embodiment (electronic paper display device)
6). Third embodiment (organic EL display device)
7). Fourth embodiment (liquid crystal display device)
8). Application examples

(First embodiment)
FIG. 1 illustrates a cross-sectional configuration and a planar configuration of a thin film transistor (organic TFT) 100 according to the first embodiment of the present disclosure. The organic TFT 100 is an organic field effect transistor having a bottom gate / top contact structure used for an active matrix circuit, a sensor array, etc. of a display device, for example. The organic TFT 100 has, for example, a gate electrode 20, a gate insulating film 30, and an organic semiconductor layer 40 in this order on a substrate 11. On the channel layer 41 at the center of the organic semiconductor layer 40, a channel protective film 50 is provided in contact with the upper surface of the organic semiconductor layer 40. Both end portions of the organic semiconductor layer 40 are contact portions 42 exposed from the channel protective film 50, and the source electrode 60 </ b> S and the drain electrode 60 </ b> D are connected to the contact portions 42.

  In addition to glass, the substrate 11 is made of polyethersulfone, polycarbonate, polyimides, polyamides, polyacetals, polyethylene terephthalate, polyethylene naphthalate, polyethyl ether ketone, polyolefins and other plastic substrates, aluminum (Al), nickel ( Ni), a metal foil substrate such as stainless steel, and paper. In addition, a functional film such as a buffer layer for improving adhesion and flatness and a barrier film for improving gas barrier properties may be provided on these substrates 11.

  The gate electrode 20 includes gold (Au), platinum (Pt), palladium (Pd), silver (Ag), tungsten (W), tantalum (Ta), molybdenum (Mo), aluminum (Al), chromium (Cr), Titanium (Ti), copper (Cu), nickel (Ni), indium (In), tin (Sn), manganese (Mn), ruthenium (Rh), rubidium (Rb) and their compounds, or PEDOT-PSS (polyethylene) Dioxythiophene-polystyrene sulfonic acid), TTF-TCNQ (tetrathiafulvalene-tetracyano-quinodimethane) and other organic metal materials are used. The gate electrode 20 may be formed by stacking two or more layers of the various materials described above.

  The gate insulating film 30 is composed of an inorganic or organic insulating film. Examples of the inorganic insulating film include inorganic materials such as silicon oxide, silicon nitride, aluminum oxide, titanium oxide, and hafnium oxide. Examples of the organic insulating film include polymer materials such as polyvinylphenol, polyimide resin, novolac resin, cinnamate resin, acrylic resin, epoxy resin, styrene resin, and polyparaxylylene. The gate insulating film 30 may be one in which two or more layers of the above-described inorganic or organic insulating films are stacked.

  Examples of the organic semiconductor layer 40 include the following materials.

  Polypyrrole and polypyrrole-substituted products, polythiophene and polythiophene-substituted products, isothianaphthenes such as polyisothianaphthene, chainylene vinylenes such as polychenylene vinylene, and poly (p-phenylene vinylene) such as poly (p-phenylene vinylene) , Polyaniline and polyaniline-substituted products, polyacetylenes, polydiacetylenes, polyazulenes, polypyrenes, polycarbazoles, polyselenophenes, polyfurans, poly (p-phenylene) s, polyindoles, polypyridazines, polyvinyl Polymers and polycyclic condensates such as carbazole, polyphenylene sulfide, polyvinylene sulfide, oligomers having the same repeating units as the polymers in the above materials, naphthacene, pentacene, hexa Of acenes such as N, S, O Derivatives substituted with functional groups such as atoms and carbonyl groups (triphenodioxazine, triphenodithiazine, hexacene-6,15-quinone, perixanthenoxanthene, etc.) and derivatives obtained by substituting these hydrogens with other functional groups. Metal phthalocyanines, tetrathiafulvalene and tetrathiafulvalene derivatives, tetrathiapentalene and tetrathiapentalene derivatives, naphthalene 1,4,5,8-tetracarboxylic acid diimide, N, N′-bis (4-trifluoromethyl) Benzyl) naphthalene 1,4,5,8-tetracarboxylic acid diimide, N, N′-bis (1H, 1H-perfluorooctyl), N, N′-bis (1H, 1H-perfluorobutyl) and N, N ′ -Dioctylnaphthalene 1,4,5,8-tetracarboxylic acid diimide derivatives, naphthalene tetracarboxylic acid diimides such as naphthalene 2,3,6,7 tetracarboxylic acid diimide, anthracene 2,3,6,7-tetracarboxylic acid Fused ring teates such as anthracene tetracarboxylic acid diimides such as diimide Carboxylic acid diimides, C60, C70, C76, C78, C84 etc. fullerenes and their derivatives, SWNT (single-walled nanotube) carbon such nanotubes, merocyanine dyes, dye and derivatives thereof, such as hemicyanine dyes.

  Examples of the material of the channel protective film 50 include polystyrene, polymethyl methacrylate, polyethylene, polypropylene, polybutadiene, polyisoprene, polyolefin, polycarbonate, polyimide, polyamide, poly (α-methylstyrene), poly (α-ethylstyrene), In addition to poly (α-propylstyrene), poly (α-butylstyrene), poly (4-methylstyrene), polyacrylonitrile, polyvinylcarbazole, polyvinylidene fluoride, polyvinylbutyral, polyvinyltoluene, poly (4-vinylbiphenyl) , Halides of the above polymers such as polytetrafluoroethylene, and copolymers thereof.

  The constituent materials of the source electrode 60S and the drain electrode 60D are the same as those of the gate electrode 20.

  The organic semiconductor layer 40 and the channel protective film 50 are formed using phase separation. Thereby, in this organic TFT 100, the selection range of the material of the channel protective film 50 can be expanded, and the highly functional channel protective film 50 can be formed on the organic semiconductor layer 40.

  Here, the organic semiconductor layer 40 corresponds to a specific example of “organic semiconductor layer” in the present disclosure. The channel protective film 50 corresponds to a specific example of “insulating layer” in the present disclosure.

  The organic TFT 100 can be manufactured, for example, as follows.

  2 to 6 show the manufacturing method of the organic TFT 100 shown in FIG. 1 in the order of steps. First, as shown in FIG. 2, the substrate 11 made of the above-described material is prepared, and the base material 10 on which the gate electrode 20 and the gate insulating film 30 are formed is formed on the substrate 11.

  That is, a gate electrode material film (not shown) made of the above-described material is formed on the substrate 11. The gate electrode material film can be formed by a coating method using an ink paste in addition to a vacuum deposition method such as resistance heating deposition or sputtering. As coating methods, spin coating method, air doctor coater method, blade coater method, rod coater method, knife coater method, squeeze coater method, reverse roll coater method, transfer roll coater method, gravure coater method, kiss coater method, cast coater method , Spray coater method, slit orifice coater method, calendar coater method, dipping method and the like. Alternatively, the film may be formed by a plating method such as electroplating or electroless plating.

  Next, a mask (not shown) such as a resist pattern is formed on the gate electrode material film. Subsequently, after the gate electrode material film is etched using the mask, the mask is removed using an ashing method or an etching method. Thus, the gate electrode 20 is formed on the substrate 11 as shown in FIG.

  Subsequently, as shown in FIG. 2, a gate insulating film 30 is formed so as to cover the gate electrode 20. The formation procedure of the gate insulating film 30 differs depending on, for example, the forming material. The inorganic insulating film is formed by a vacuum process such as sputtering, resistance heating vapor deposition, physical vapor deposition (PVD), or chemical vapor deposition (CVD). The inorganic insulating film can also be formed by a sol-gel method of a solution in which a raw material is dissolved. Organic insulation film is spin coat method, air doctor coater method, blade coater method, rod coater method, knife coater method, squeeze coater method, reverse roll coater method, transfer roll coater method, gravure coater method, kiss coater method, cast coater method In addition to coating methods such as spray coater method, slit orifice coater method, calendar coater method, and dipping method, vacuum processes such as chemical vapor deposition method and vapor deposition polymerization method may be used.

  After that, as shown in FIG. 3, a solution in which an organic semiconductor material and an insulating layer material are mixed is applied to the base material 10 to form a coating film 70.

  The organic semiconductor material is the same as that mentioned as the material of the organic semiconductor layer 40 described above.

  The insulating layer material is the same as that mentioned as the material of the channel protective film 50 described above. These materials cannot be formed on the organic semiconductor layer 40 by a method of forming an organic semiconductor layer and then applying a solution of an insulating layer material on the upper surface of the organic semiconductor layer.

  The film formation method of the coating film 70 includes not only vacuum evaporation methods such as resistance heating vapor deposition and sputtering, but also spin coating method, air doctor coater method, blade coater method, rod coater method, knife coater method, squeeze coater method, reverse roll coater. The film can also be formed by a coating method such as a coating method, a transfer roll coater method, a gravure coater method, a kiss coater method, a cast coater method, a spray coater method, a slit orifice coater method, a calendar coater method, or an immersion method.

  When the coating film 70 is dried, as shown in FIG. 4, a two-layer structure 71 having the organic semiconductor layer 40 on the substrate 10 side and the channel protective film 50 thereon is generated by spontaneous phase separation. A clean interface P with few traps is formed between the organic semiconductor layer 40 and the channel protective film 50 by phase separation.

  Here, since the organic semiconductor layer 40 and the channel protective film 50 in contact with the upper surface of the organic semiconductor layer 40 are formed using phase separation, a solution of an insulating layer material is formed on the upper surface of the organic semiconductor layer after the organic semiconductor layer is formed. There is no need to apply. Therefore, it is possible to select a wide range of insulating layer materials having good material properties and processability as materials for the channel protective film 50 without being limited to water-soluble or fluorine-based solvents.

  Subsequently, as shown in FIG. 5, the organic semiconductor film 40 is singulated as necessary. Further, the channel protective film 50 in the unnecessary part (upper part of the contact part 42) is removed.

  After that, a source / drain electrode material film (not shown) made of the above-described material is formed on the surfaces of the organic semiconductor layer 40, the channel protective film 50 and the base material 10. The method of forming the source / drain electrode material film is the same as that of the gate electrode material film described above.

  Subsequently, the source / drain electrode material film (not shown) is patterned by photolithography to form the source electrode 60S and the drain electrode 60D as shown in FIG.

  In the steps so far, a clean interface P with few traps formed by phase separation is maintained between the organic semiconductor layer 40 and the channel protective film 50. Therefore, the upper end portion 41A of the channel layer 41 of the organic semiconductor layer 40 is protected from the solvent or chemical used in the process, and unnecessary carrier induction does not occur, so that the reliability is improved.

  Thus, the organic TFT 100 shown in FIG. 1 is completed.

  In this organic TFT 100, since the organic semiconductor layer 40 and the channel protective film 50 are formed by utilizing phase separation, the channel protective film 50 is not limited to a water-soluble or fluorinated solvent, and has good material properties. It is made of a material with processability and has high functionality. Therefore, desired TFT characteristics can be obtained. In addition, a clean interface P with few traps formed by phase separation is held between the organic semiconductor layer 40 and the channel protective film 50. Therefore, the upper end portion 41A of the channel layer 41 of the organic semiconductor layer 40 is protected from the solvent or chemical used in the process, and unnecessary carrier induction does not occur, so that the reliability is improved.

  Thus, in this embodiment, since the organic semiconductor layer 40 and the channel protective film 50 are formed using phase separation, the selection range of the material of the channel protective film 50 is expanded, and the organic semiconductor layer 40 It is possible to form a channel protective film 50 with high functionality on the substrate.

  Further, specific examples of the present disclosure will be described.

Example 1
An organic TFT 100A having a bottom gate / top contact structure as shown in FIG. 7 was produced. At that time, the gate electrode 20, the gate insulating film 30, and the organic semiconductor layer 40 were sequentially formed on the substrate 11 from the substrate 11 side. On the channel layer 41 of the organic semiconductor layer 40, the channel protective film 50 is provided in contact with the upper surface of the organic semiconductor layer 40. On the channel protective film 50, an etching mask 80 made of a photoresist was laminated. Both end portions of the organic semiconductor layer 40 were contact portions 42 exposed from the channel protective film 50, and the source electrode 60S and the drain electrode 60D were connected to the contact portions 42. An injection layer 61 made of a conductive polymer was provided between the contact portion 42 and the source electrode 60S and the drain electrode 60D. The gate electrode 20 has a laminated structure of an aluminum layer and a titanium layer, the gate insulating film 30 is an organic insulating film mainly composed of PVP, the organic semiconductor layer 40 is made of TIPS pentacene, and the channel protective film 50 is made of poly α methyl. Styrene (PaMS) (0.5 wt%) was used, and the source electrode 60S and the drain electrode 60D were made of copper (Cu).

  In the present embodiment, the organic semiconductor layer 40 corresponds to a specific example of “organic semiconductor layer” in the present disclosure. The channel protective film 50 corresponds to a specific example of “insulating layer” in the present disclosure.

  First, as shown in FIG. 8, the base material 10 on which the gate electrode 20 and the gate insulating film 30 were formed was formed on the substrate 11.

  That is, a gate electrode material film (not shown) having a laminated structure of an aluminum layer having a thickness of 50 nm and a titanium layer having a thickness of 10 nm was formed on the substrate 11 by sputtering. The gate electrode material film was patterned by photolithography to form the gate electrode 20. Next, a gate insulating film 30 made of an organic insulating film containing PVP as a main component was applied and formed on the substrate 11 on which the gate electrode 20 was formed by spin coating.

  Subsequently, as shown in FIG. 9, a solution in which TIPS pentacene (0.5 wt%) as an organic semiconductor material and PaMS (0.5 wt%) as an insulating layer material are mixed with xylene as a solvent in the base material 10. Was applied by a slit coating method to form a coating film 70.

  Thereafter, when the coating film 70 is dried at 140 ° C., as shown in FIG. 10, the lower organic semiconductor layer 40A, the channel protective film 50, and the upper organic semiconductor layer 40B are formed as a base material by spontaneous phase separation. A three-layer structure 72 including this order from the 10 side was obtained. The lower organic semiconductor layer 40A and the upper organic semiconductor layer 40B were made of TIPS pentacene. The central channel protective film was made of PaMS. A clean interface P with few traps was formed between the lower organic semiconductor layer 40A and the channel protective film 50 and between the upper organic semiconductor layer 40B and the channel protective film 50 by phase separation.

  Note that the laminated structure formed by spontaneous phase separation differs depending on the specific gravity of the material or affinity with the base. Therefore, the two-layer structure 71 having the organic semiconductor layer 40 on the substrate 10 side and the first gate insulating film 50 thereon is formed by selecting the material and the combination with the base, similarly to the first embodiment. Is also possible.

  After forming the three-layer structure 72, as shown in FIG. 11, the upper organic semiconductor layer 40B as the outermost layer was removed by etching using a γ-butyllactone solution. As a result, the organic semiconductor layer 40 was left on the substrate 10 side, and the channel protective film 50 was left thereon.

  Subsequently, as shown in FIG. 12, an etching mask 80 was formed on the channel protective film 50 using a photoresist mainly composed of γ-butyllactone. After that, as shown in FIG. 12, the unnecessary portion of the channel protective film 50 was removed by dry etching using the etching mask 80.

  After that, as shown in FIG. 13, an injection layer 61 made of a conductive polymer was formed by coating.

  After the injection layer 61 was formed, a source / drain electrode material film (not shown) made of copper was formed to a thickness of 100 nm on the injection layer 61 by sputtering. Subsequently, the source / drain electrode material film was patterned by photolithography to form the source electrode 60S and the drain electrode 60D as shown in FIG.

  After forming the source electrode 60S and the drain electrode 60D, as shown in FIG. 15, the unnecessary injection layer 61 was removed by dry etching using the source electrode 60S and the drain electrode 60D as a mask. Thus, the organic TFT 100A having the bottom gate / top contact structure shown in FIG. 7 was completed.

  In the steps so far, a clean interface P with few traps formed by phase separation has been maintained between the organic semiconductor layer 40 and the channel protective film 50. Therefore, the upper end portion 41A of the channel layer 41 of the organic semiconductor layer 40 is protected from the solvent or chemical used in the process, and unnecessary carrier induction does not occur, so that the reliability is improved.

(Example 2)
An organic TFT 100B having a top gate / bottom contact structure as shown in FIG. 16 was produced. At that time, the source electrode 60S and the drain electrode 60D, the organic semiconductor layer 40, the first gate insulating film 50, the second gate insulating film 30, and the gate electrode 20 were formed on the substrate 11 in this order from the substrate 11 side. The source electrode 60S and the drain electrode 60D are composed of gold (Au), the organic semiconductor layer 40 is composed of a PXX derivative, the first gate insulating film 50 is composed of cycloolefin copolymer (TOPAS) (0.5 wt%), The second gate insulating film 30 is an organic insulating film mainly composed of PVP, and the gate electrode 20 has a laminated structure of an aluminum layer and a titanium layer.

  In the present embodiment, the organic semiconductor layer 40 corresponds to a specific example of “organic semiconductor layer” in the present disclosure. The first gate insulating film 50 corresponds to a specific example of “insulating layer” in the present disclosure.

  First, as shown in FIG. 17, a blanket 90 is prepared, and xylene with a PXX derivative (0.5 wt%) as an organic semiconductor material and TOPAS (0.5 wt%) as an insulating layer material is used as the blanket 90. The mixed solution was applied by a slit coating method to form a coating film 70.

  After that, when the coating film 70 is dried at room temperature, as shown in FIG. 18, the first gate insulating film 50 and the organic semiconductor layer 40 are reversely included in this order from the substrate 10 side by spontaneous phase separation. A two-layer structure 73 was obtained. The first gate insulating film 50 is made of TOPAS. The organic semiconductor layer 40 was composed of a PXX derivative. A clean interface P with few traps was formed between the organic semiconductor layer 40 and the first gate insulating film 50 by phase separation.

  Note that the laminated structure formed by spontaneous phase separation differs depending on the specific gravity of the material or affinity with the base. Therefore, it is possible to form a laminated structure different from the above depending on the selection of materials or the combination with the base.

  After forming the inverted two-layer structure 73, as shown in FIG. 19, an unnecessary portion of the film was removed from the blanket 90 with a removal plate (not shown).

  On the other hand, as shown in FIG. 20, the base material 10 having the source electrode 60 </ b> S and the drain electrode 60 </ b> D was formed on the substrate 11.

  Subsequently, as shown in FIG. 21, the inverted two-layer structure 73 was transferred from the blanket 90 to the substrate 10. In this step, the organic semiconductor layer 40 was inverted to the lower layer and the first gate insulating film 50 was inverted to the upper layer on the substrate 10. As a result, a sequential two-layer structure 74 including the organic semiconductor layer 40 and the first gate insulating film 50 in this order from the base 10 side was formed on the base 10.

  After forming the sequential two-layer structure 74, as shown in FIG. 22, the second gate insulating film 30 containing PVP as a main component was formed by a slit coating method.

  Subsequently, as shown in FIG. 23, a gate electrode material film (not shown) having a laminated structure (total thickness 70 nm) of an aluminum layer and a titanium layer was formed on the second gate insulating film 30. The gate electrode material film was patterned by photolithography to form the gate electrode 20. Thus, the organic TFT 100B having the top gate / bottom contact structure shown in FIG. 16 was completed.

  In the steps so far, the interface P between the organic semiconductor layer 40 and the channel protective film 50 is formed by phase separation, and is protected from the solvent and chemicals used in the process and kept clean. Improved.

  Hereinafter, modifications of the first embodiment will be described.

(Modification 1)
In the first embodiment, as illustrated in FIG. 1, the organic TFT 100 having the bottom gate / top contact structure has been described as an example. However, the present disclosure can also be applied to an organic TFT 100C having a bottom gate / bottom contact structure as shown in FIG. This organic TFT 100C has a gate electrode 20, a gate insulating film 30, a source electrode 60S and a drain electrode 60D, an organic semiconductor layer 40, and a channel protective film 50 on the substrate 11 in this order from the substrate 11 side. The source electrode 60S and the drain electrode 60D are connected to the lower surface of the organic semiconductor layer 40. The channel protective film 50 is provided in contact with the upper surface of the organic semiconductor layer 40.

  In the present modification, the organic semiconductor layer 40 corresponds to a specific example of “organic semiconductor layer” in the present disclosure. The channel protective film 50 corresponds to a specific example of “insulating layer” in the present disclosure.

  The organic TFT 100C can be manufactured as follows, for example.

  25 to 29 show the manufacturing method of the organic TFT 100C in the order of steps. In this manufacturing method, for example, in the same manner as in Example 1, after forming the coating film 70, the three-layer structure 72 is formed by spontaneous phase separation, and the outermost layer is removed.

  First, as shown in FIG. 25, the base material 10 on which the gate electrode 20, the gate insulating film 30, the source electrode 60S, and the drain electrode 60D are formed is formed on the substrate 11.

  That is, the gate electrode 20 and the gate insulating film 30 are sequentially formed on the substrate 11 in the same manner as in Example 1 or the first embodiment. Next, the source electrode 60S and the drain electrode 60D are formed on the gate insulating film 30 in the same manner as in Example 1 or the first embodiment.

  Subsequently, as shown in FIG. 26, in the same manner as in Example 1, TIPS pentacene (0.5 wt%) as the organic semiconductor material and PaMS (0.5 wt%) as the insulating layer material were formed on the base material 10. A solution mixed with xylene as a solvent is applied by a slit coating method to form a coating film 70.

  After that, when the coating film 70 is dried at 140 ° C., as shown in FIG. 27, the lower organic semiconductor layer 40A, the channel protective film 50, and the upper organic semiconductor layer 40B are formed as a base material by spontaneous phase separation. A three-layer structure 72 including this order from the 10 side is obtained. The lower organic semiconductor layer 40A and the upper organic semiconductor layer 40B are made of TIPS pentacene. The central channel protective film is made of PaMS. A clean interface P with few traps is formed between the lower organic semiconductor layer 40A and the channel protective film 50 and between the upper organic semiconductor layer 40B and the channel protective film 50 by phase separation.

  Note that the laminated structure formed by spontaneous phase separation differs depending on the specific gravity of the material or affinity with the base. Therefore, the two-layer structure 71 having the organic semiconductor layer 40 on the substrate 10 side and the first gate insulating film 50 thereon can be formed in the same manner as in the first embodiment by selecting a material or in combination with the base. Is possible.

  After forming the three-layer structure 72, as shown in FIG. 28, the upper organic semiconductor layer 40B, which is the outermost layer, is removed by etching using a γ-butyllactone solution. Thereby, the organic semiconductor layer 40 is left on the substrate 10 side, and the channel protective film 50 is left thereon.

  Subsequently, as shown in FIG. 29, unnecessary portions of the channel protective film 50 and the organic semiconductor layer 40 are removed by dry etching or wet etching. Thus, the organic TFT 100C having the bottom gate / bottom contact structure shown in FIG. 24 is completed.

  In the steps so far, the interface P between the organic semiconductor layer 40 and the channel protective film 50 is formed by phase separation, and is protected from the solvent and chemicals used in the process and kept clean. Will improve.

  Moreover, this organic TFT 100C can also be manufactured as follows.

  30 to 34 show another manufacturing method of the organic TFT 100C in the order of steps. In this manufacturing method, for example, as in the second embodiment, an inverted two-layer structure 73 is formed on the blanket 90 by spontaneous phase separation, and the inverted two-layer structure 73 is transferred to the substrate 10 to form a forward two-layer structure 74. Is formed.

  First, as shown in FIG. 30, a blanket 90 is slit into a solution in which PXX derivative (0.5 wt%) as an organic semiconductor material and TOPAS (0.5 wt%) as an insulating layer material are mixed with xylene as a solvent. Coating is performed by a coating method to form a coating film 70.

  After that, when the coating film 70 is dried at room temperature, the first gate insulating film 50 and the organic semiconductor layer 40 are included in this order from the blanket 90 side by spontaneous phase separation as shown in FIG. A layer structure 73 is obtained. The first gate insulating film 50 is made of TOPAS. The organic semiconductor layer 40 is composed of a PXX derivative. A clean interface P with few traps is formed between the organic semiconductor layer 40 and the first gate insulating film 50 by phase separation.

  Note that the laminated structure formed by spontaneous phase separation differs depending on the specific gravity of the material or affinity with the base. Therefore, it is possible to form a laminated structure different from the above by selecting the material and combining with the base.

  After the reverse two-layer structure 73 is formed, unnecessary portions of the film are removed from the blanket 90 with a removal plate (not shown) as shown in FIG.

  On the other hand, as shown in FIG. 33, the base material 10 having the gate electrode 20, the gate insulating film 30, the source electrode 60S and the drain electrode 60D is formed on the substrate 11.

  Subsequently, as shown in FIG. 34, the inverted two-layer structure 73 is transferred from the blanket 90 to the substrate 10. In this step, the organic semiconductor layer 40 is inverted to the lower layer and the first gate insulating film 50 is inverted to the upper layer on the substrate 10. As a result, a sequential two-layer structure 74 including the organic semiconductor layer 40 and the first gate insulating film 50 in this order from the base 10 side is formed on the base 10. Thus, the organic TFT 100C having the bottom gate / bottom contact structure shown in FIG. 24 is completed.

  In the steps so far, the interface P between the organic semiconductor layer 40 and the channel protective film 50 is formed by phase separation, and is protected from the solvent and chemicals used in the process and kept clean. Will improve.

(Modification 2)
The present disclosure is also applicable to an organic TFT 100D having a top gate / top contact structure as shown in FIG. This organic TFT 100D has an organic semiconductor layer 40, a first gate insulating film 30, a source electrode 60S and a drain electrode 60D, a second gate insulating film 30, and a gate electrode 20 on the substrate 11 in this order from the substrate 11 side. ing.

  In the present modification, the organic semiconductor layer 40 corresponds to a specific example of “organic semiconductor layer” in the present disclosure. The first gate insulating film 50 corresponds to a specific example of “insulating layer” in the present disclosure.

  This organic TFT 100D can be manufactured as follows, for example.

  36 to 43 show the manufacturing method of the organic TFT 100D in the order of steps. In this manufacturing method, for example, in the same manner as in Example 1, after forming the coating film 70, the three-layer structure 72 is formed by spontaneous phase separation, and the outermost layer is removed.

  First, as shown in FIG. 36, a substrate 11 is prepared as a base material 10, and as shown in FIG. 37, TIPS pentacene (0. 5 wt%) and a solution prepared by mixing PaMS (0.5 wt%) as an insulating layer material with xylene as a solvent is applied by a slit coating method to form a coating film 70.

  After that, when the coating film 70 is dried at 140 ° C., as shown in FIG. 38, the lower organic semiconductor layer 40A, the first gate insulating film 50, and the upper organic semiconductor layer 40B are separated by spontaneous phase separation. A three-layer structure 72 including this order from the substrate 10 side is obtained. The lower organic semiconductor layer 40A and the upper organic semiconductor layer 40B are made of TIPS pentacene. The central first gate insulating film 50 is made of PaMS. A clean interface P with few traps is formed between the lower organic semiconductor layer 40A and the first gate insulating film 50 and between the upper organic semiconductor layer 40B and the first gate insulating film 50 by phase separation. The

  Note that the laminated structure formed by spontaneous phase separation differs depending on the specific gravity of the material or affinity with the base. Therefore, the two-layer structure 71 having the organic semiconductor layer 40 on the substrate 10 side and the first gate insulating film 50 thereon can be formed in the same manner as in the first embodiment by selecting a material or in combination with the base. Is possible.

  After forming the three-layer structure 72, as shown in FIG. 39, the upper organic semiconductor layer 40B, which is the outermost layer, is removed by etching using a γ-butyllactone solution. Thereby, the organic semiconductor layer 40 and the first gate insulating film 50 remain on the base material 10 side.

  Subsequently, an etching mask (not shown) is formed on the first gate insulating film 50 using a photoresist whose main component is γ-butyllactone. Thereafter, as shown in FIG. 40, the unnecessary first gate insulating film 50 is removed by dry etching using this etching mask.

  After the unnecessary first gate insulating film 50 is removed, a source / drain electrode material film (not shown) made of copper is formed to a thickness of 100 nm on the surfaces of the organic semiconductor layer 40 and the first gate insulating film 50 by sputtering. The film is formed. Subsequently, the source / drain electrode material film is patterned by photolithography to form the source electrode 60S and the drain electrode 60D as shown in FIG.

  After forming the source electrode 60S and the drain electrode 60D, as shown in FIG. 42, the second gate insulating film 30 is formed in the same manner as in Example 1 or the first embodiment.

  Subsequently, as shown in FIG. 43, the gate electrode 20 is formed on the gate insulating film 30 in the same manner as in Example 1 or the first embodiment. Thus, the organic TFT 100D having the top gate / top contact structure shown in FIG. 35 is completed.

  In the steps so far, the interface P between the organic semiconductor layer 40 and the channel protective film 50 is formed by phase separation, and is protected from the solvent and chemicals used in the process and kept clean. Will improve.

  Moreover, this organic TFT 100D can also be manufactured as follows.

  44 to 47 show another manufacturing method of the organic TFT 100D in the order of steps. In this manufacturing method, for example, as in the second embodiment, an inverted two-layer structure 73 is formed on the blanket 90 by spontaneous phase separation, and the inverted two-layer structure 73 is transferred to the substrate 10 to form a forward two-layer structure 74. Is formed.

  First, as shown in FIG. 44, a blanket 90 is prepared, and xylene with a PXX derivative (0.5 wt%) as an organic semiconductor material and TOPAS (0.5 wt%) as an insulating layer material is used as the solvent. The mixed solution is applied by a slit coating method to form a coating film 70.

  After that, when the coating film 70 is dried at room temperature, the first gate insulating film 50 made of TOPAS and the organic semiconductor layer 40 made of PXX derivative are formed on the blanket 90 by spontaneous phase separation as shown in FIG. An inverted two-layer structure 73 including this order from the side is obtained. A clean interface P with few traps is formed between the organic semiconductor layer 40 and the first gate insulating film 50 by phase separation.

  Note that the laminated structure formed by spontaneous phase separation differs depending on the specific gravity of the material or affinity with the base. Therefore, it is possible to form a laminated structure different from the above by selecting the material and combining with the base.

On the other hand, as shown in FIG. 46, the substrate 11 is prepared as the base material 10, and as shown in FIG. 47, the inverted two-layer structure 73 is transferred from the blanket 90 to the base material 10. In this step, the organic semiconductor layer 40 is inverted to the lower layer and the first gate insulating film 50 is inverted to the upper layer on the substrate 10. As a result, a sequential two-layer structure 74 including the organic semiconductor layer 40 and the first gate insulating film 50 in this order from the base 10 side is formed on the base 10.

  After transferring the sequential two-layer structure 74 to the base material 10, unnecessary portions of the first gate insulating film 50 are removed by the steps shown in FIGS. 40 and 41 in the same manner as the manufacturing method described above, and the source electrode 60S. Then, the drain electrode 60D is formed. Subsequently, similarly to the above manufacturing method, the second gate insulating film 30 and the gate electrode 20 are formed by the steps shown in FIGS. Thus, the organic TFT 100D having the top gate / top contact structure shown in FIG. 35 is completed.

  In the steps so far, the interface P between the organic semiconductor layer 40 and the channel protective film 50 is formed by phase separation, and is protected from the solvent and chemicals used in the process and kept clean. Will improve.

(Modification 3)
FIG. 48 illustrates a cross-sectional configuration of an organic TFT 100E having a bottom gate / top contact structure according to Modification 3 of the present disclosure. This modification has the same configuration, operation, and effects as those of the first embodiment except that the doping region 42A is provided in a part in the thickness direction from the upper surface of the contact portion 42 of the organic semiconductor layer 40. doing.

  As the doping material, an acceptor material is used when the organic semiconductor layer 40 is p-type, and a donor material is used when the organic semiconductor layer 40 is n-type.

  Specific examples of the acceptor material are as follows.

Metal oxides such as MoOx, ReO ₃ , V ₂ O ₅ , WO ₃ , TiO ₂ , AuO, Al ₂ O 3, CuO, SO ₃ . Metal halides such as CuI, SbCl ₅ , SbF ₅ , FeCl ₃ , LiF, BaF ₂ , CaF ₂ , MgF ₂ . AsF _5, BF3, BCl _3, halides such as BBr _3, PF _5. Carbonates such as CaCO ₃ , BaCO ₃ and Li ₂ CO ₃ .

  Further, organic molecules / complexes such as those listed below can also be used.

  As p-benzoquinones, 2,3,5,6-tetracyano- (p-cyanyl), 2,3-dibromo-5,6-dicyano-p-benzoquinone, 2,3-dichloro-5,6-dicyano -p-benzoquinone, 2,3-diiodo-5,6-dicyano-p-benzoquinone, 2,3-dicyano-p-benzoquinone, p-bromanyl, p-chloranil, p-iodenyl, p-floranyl, 2,5 -Dichloro-p-benzoquinone, 2,6-dichloro-p-benzoquinone, chloranilic acid, bromanylic acid, 2,5-dihydroxy-p-benzoquinone, 2,5-dichloro-3,6-dimethyl-p-benzoquinone, 2 , 5-Dibromo-3,6-dimethyl-p-benzoquinone, BTDAQ, p-benzoquinone, 2,5-dimethyl-p-benzoquinone, 2,6-dimethyl-p-benzoquinone, juro- (tetramethyl), o- Benzoquinones, o-bromanyl, o-chloranil, 1,4-naphthoquinones, 2,3-dicyano-5-nitro-1,4-naphthoquinone, 2,3-dicyano-1,4-naphthoquinone 2,3-dichloro-5-nitro-1,4-naphthoquinone, 2,3-dichloro-1,4-naphthoquinone, 1,4-naphthoquinone can be exemplified. Examples of diphenoquinones include 3,3 ', 5,5'-tetrabromo-diphenoquinone, 3,3', 5,5'-tetrachloro-diphenoquinone, and diphenoquinone. TCNQs and analogs include tetracyano-quinodimethane (TCNQ), Tetrafluoro-tetracyano-quinodimethane (F4-TCNQ), trifluoromethyl-TCNQ, 2,5-difluoro-TCNQ, monofluoro-TCNQ, TNAP, decyl -TCNQ, methyl-TCNQ, dihydrovalereno-TCNQ, tetrahydrovalereno-TCNQ, dimethyl-TCNQ, diethyl-TCNQ, benzo-TCNQ, dimethoxy-TCNQ, BTDA-TCNQ, diethoxy-TCNQ, tetramethyl-TCNQ, tetracyano Examples include anthraquinodimethane, polynitro compounds, tetranitrobiphenol, dinitrobiphenyl, picric acid, trinitrobenzene, 2,6-dinitrophenol, and 2,4-dinitrophenol. Fluorenes include 9-dicyanomethylene-2,4,5,7-tetranitro-fluorene, 9-dicyanomethylene-2,4,7-trinitro-fluorene, 2,4,5,7-tetranitro-fluorenone, 2 4,7-trinitro-fluorenone. Benzocyanos and analogs include (TBA) 2H CTM, (TBA) 2HCDAHD, K · CF, TBA · PCA, TBA · MeOTCA, TBA · EtOTCA, TBA · PrOTCA, (TBA) 2HCP, hexacyanobutadiene tetracyanoethylene, 1 2,4,5-tetracyanobenzene. Transition metal complexes include (TPP) 2Pd (dto) 2, (TPP) 2Pt (dto) 2, (TPP) 2Ni (dto) 2, (TPP) 2Cu (dto) 2, (TBA) 2Cu (ox) 2 is exemplified.

  Specific examples of the donor material include the following.

In addition to alkali metals such as Li, Na and Cs, metal carbonates such as Cs ₂ O ₃ and Rb ₂ CO ₃ . Examples of aromatic hydrocarbons and analogs include organic materials such as tetracene, perylene, anthracene, coronene, pentacene, chrysene, phenanthrene, naphthalene, p-dimethoxybenzene, rubrene, and hexamethoxytriphenylene. Further, TTFs and analogs include HMTTF, OMTTF, TMTTF, BEDO-TTF, TTeCn-TTF, TMTSF, EDO-TTF, HMTSF, TTF, EOET-TTF, EDT-TTF, (EDO) 2DBTTF, TSCn-TT , HMTTeF, BEDT-TTF, CnTET-TTF, TTCn-TTF, TSF, DBTTF. Other examples of TTTs include tetrathiotetracene, tetraselenotetracene, and tetratellurotetracene. Examples of azines include dibenzo [c, d] -fetinoazine, benzo [c] -phenothiazine, phenothiazine, N-methyl-phenothiazine, dibenzo [c, d] -phenoselenazine, N, N-dimethylphenazine, and phenazine Is done. Monoamines include N, N-diethyl-m-toluidine, N, N-diethylaniline, N-ethyl-o-toluidine, diphenylamine, skatole, indole, N, N-dimethyl-o-toluidine, o-toluidine, Examples include m-toluidine, aniline, o-chloroaniline, o-bromoaniline, and p-nitroaniline. Diamines include N, N, N ', N'-tetramethyl-p-phenylenediamine, 2,3,5,6-tetramethyl- (dylenediamine), p-phenyldiamine, N, N, N ', N'-tetramethylbenzidine, 3,3', 5,5'-tetramethylbenzidine, 3,3'-dimethylbenzidine, 3,3'-dimethoxybenzidine, benzidine, 3,3'-dibromo-5, Examples include 5'-dimethylbenzidine, 3,3'-dichloro-5,5'-dimethylbenzidine, and 1,6-diaminopyrene. Others include 4,4 ', 4''-tris (N-3-methylphenyl-N-phenylamino) -triphenylamine (m-MTDATA), 4,4', 4 ''-tris (N- (2-Naphtyl) -N-phenylamino) -triphenylamine (2TNATA), α-NDP, copper phthalocyanine, 1,4,6,8-tetrakisdimethylaminopyrene, 1,6-dithiopyrene, decamethylferrocene, ferrocene

  As shown in FIG. 49, the organic TFT 100E has a first DP when doping the contact portion 42 using the channel protective film 50 or an etching mask (not shown) provided thereon. It can be manufactured in the same manner as in the embodiment. As a doping method, for example, a MoOx film is formed with a thickness of 2 nm by resistance heating vapor deposition.

(Modification 4)
FIG. 50 illustrates a cross-sectional configuration of an organic TFT 100 </ b> F having a top gate / top contact structure according to Modification 4 of the present disclosure. This modified example has the same configuration, operation, and effect as the modified example 2 except that the doping region 42A is provided in a part in the thickness direction from the upper surface of the contact portion 42 of the organic semiconductor layer 40. ing.

  This organic TFT 100F is doped with DP in the contact portion 42 using the first gate insulating film 50 or an etching mask (not shown) provided thereon by the process shown in FIG. In view of what to do, it can be manufactured in the same manner as in the second modification. As a doping method, for example, a MoOx film is formed with a thickness of 2 nm by resistance heating vapor deposition.

  Hereinafter, an embodiment of an electronic device (display device) using the organic TFT 100 will be described.

(Second Embodiment)
FIG. 51 illustrates a cross-sectional configuration of a display device (electronic paper display device 1) according to the second embodiment of the present disclosure. The electronic paper display device 1 has an organic TFT 100 according to the first embodiment shown in FIG. 1 on a substrate 11, and an electrophoretic display element 110 is provided as a display element on the upper layer.

  51 shows the case where the electronic paper display device 1 has the organic TFT 100 according to the first embodiment shown in FIG. 1, the electronic paper display device 1 is the first embodiment. It goes without saying that organic TFTs 100A to 100F according to Examples 1 and 2 or Modifications 1-4 may be provided instead of the organic TFT 100 according to the embodiment.

  The substrate 11 and the organic TFT 100 are configured in the same manner as in the first embodiment, for example. The source electrode 60S of the organic TFT 100 is connected to the wiring layer 63 via a connection hole H1 provided in the interlayer insulating film 62, for example.

  In the electrophoretic display element 110, for example, a display layer 113 made of an electrophoretic display body is sealed between the pixel electrode 111 and the common electrode 112. The pixel electrode 111 is provided for each pixel, and is connected to the wiring layer 63 via a connection hole H2 provided in the planarization film 114, for example. The common electrode 112 is provided on the counter substrate 115 as an electrode common to a plurality of pixels.

(Third embodiment)
FIG. 52 illustrates a cross-sectional structure of a display device (organic EL display device 2) according to the third embodiment of the present disclosure. The organic EL display device 2 has an organic TFT 100 according to the first embodiment shown in FIG. 1 on a substrate 11, and an organic EL element 120 is provided as a display element on the upper layer. The light emission method of the organic EL display device 2 may be a so-called top emission method (upper surface light emission method) or a bottom emission method (lower surface light emission method).

  52 shows the case where the organic EL display device 2 has the organic TFT 100 according to the first embodiment shown in FIG. 1, the organic EL display device 2 is the first embodiment. It goes without saying that organic TFTs 100A to 100F according to Examples 1 and 2 or Modifications 1-4 may be provided instead of the organic TFT 100 according to the embodiment.

  The substrate 11 and the organic TFT 100 are configured in the same manner as in the first embodiment. The source electrode 60S of the organic TFT 100 is connected to the wiring layer 63 via a connection hole H1 provided in the interlayer insulating film 62, for example.

  The organic EL element 120 includes, for example, a pixel separation film 122 having an opening for each pixel on the first electrode 121, and the organic layer 123 and the second electrode 124 are formed in the opening portion of the pixel separation film 122. Are stacked. For example, the first electrode 121 is connected to the wiring layer 63 via a connection hole H <b> 2 provided in the planarizing film 125. The organic EL element 120 is sealed with a protective insulating film 126, for example. A sealing substrate 128 is bonded onto the protective insulating film 126 with an adhesive layer 127 such as a thermosetting resin or an ultraviolet curable resin interposed therebetween.

(Fourth embodiment)
FIG. 53 illustrates a cross-sectional configuration of a display device (liquid crystal display device 3) according to the fourth embodiment of the present disclosure. The liquid crystal display device 3 has the organic TFT 100 according to the first embodiment shown in FIG. 1 on a substrate 11, and a liquid crystal display element 130 is provided as a display element on the upper layer.

  FIG. 53 shows the case where the liquid crystal display device 3 includes the organic TFT 100 according to the first embodiment shown in FIG. 1, but the liquid crystal display device 3 is the first embodiment. It goes without saying that the organic TFTs 100A to 100F according to Examples 1 and 2 or Modification 1-4 may be provided instead of the organic TFT 100 according to the above.

  The substrate 11 and the organic TFT 100 are configured in the same manner as in the first embodiment. The source electrode 60S of the organic TFT 100 is connected to the wiring layer 63 via a connection hole H1 provided in the interlayer insulating film 62, for example.

  In the liquid crystal display element 130, for example, a liquid crystal layer 133 is sealed between the pixel electrode 131 and the counter electrode 132, and an alignment film is formed on each surface of the pixel electrode 131 and the counter electrode 132 on the liquid crystal layer 133 side. 134A and 134B are formed. The pixel electrode 131 is provided for each pixel, and is connected to the wiring layer 63 via a connection hole H2 provided in the planarization film 135, for example. The counter electrode 132 is provided on the counter substrate 136 as a common electrode for a plurality of pixels, and is held at a common potential, for example. The liquid crystal layer 133 is composed of, for example, liquid crystal driven in a VA (Vertical Alignment) mode, a TN (Twisted Nematic) mode, an IPS (In Plane Switching) mode, or the like.

  Further, a backlight 137 is provided below the drive side substrate 10, and polarizing plates 138 A and 138 B are bonded to the backlight 137 side of the substrate 11 and the counter substrate 136.

(Application example)
Next, with reference to FIGS. 54 to 65, application examples of the display device according to the above embodiment will be described. The display device in the above embodiment can be applied to electronic devices in various fields such as a television device, a digital camera, a laptop personal computer, a mobile terminal device such as a mobile phone or a smartphone, or a video camera. In other words, this display device can be applied to electronic devices in various fields that display a video signal input from the outside or a video signal generated inside as an image or video.

(module)
The display device according to the above-described embodiment is incorporated into various electronic devices such as application examples 1 to 7 described later, for example, as a module illustrated in FIG. In this module, for example, an external connection terminal (not shown) is formed by extending a wiring in a frame region 11B around the display region 11A of the substrate 11. The external connection terminal may be provided with a flexible printed circuit (FPC) 150 for signal input / output.

(Application example 1)
FIG. 55 and FIG. 56 each show the appearance of the electronic book 210 to which the display device of the above embodiment is applied. The electronic book 210 includes, for example, a display unit 211 and a non-display unit 212, and the display unit 211 is configured by the display device of the above embodiment.

(Application example 2)
57 and 58 show the appearance of a smartphone 220 to which the display device of the above embodiment is applied. The smartphone 220 has, for example, a display unit 221 and an operation unit 222 on the front side and a camera 223 on the back side, and the display unit 221 is configured by the display device of the above embodiment.

(Application example 3)
FIG. 59 illustrates an appearance of a television device 230 to which the display device of the above embodiment is applied. The television device 230 includes, for example, a video display screen unit 233 including a front panel 231 and a filter glass 232, and the video display screen unit 233 is configured by the display device of the above embodiment.

(Application example 4)
60 and 61 show the appearance of a digital camera 240 to which the display device of the above embodiment is applied. The digital camera 240 includes, for example, a flash light emitting unit 241, a display unit 242, a menu switch 243, and a shutter button 244, and the display unit 242 includes the display device of the above embodiment.

(Application example 5)
FIG. 62 shows the appearance of a notebook personal computer 250 to which the display device of the above embodiment is applied. The notebook personal computer 250 includes, for example, a main body 251, a keyboard 252 for inputting characters and the like, and a display unit 253 for displaying an image. The display unit 253 is provided by the display device of the above embodiment. It is configured.

(Application example 6)
FIG. 63 shows the appearance of a video camera 260 to which the display device of the above embodiment is applied. The video camera includes, for example, a main body 261, a subject shooting lens 262 provided on the front side surface of the main body 261, a start / stop switch 263 at the time of shooting, and a display unit 264. And this display part 264 is comprised by the display apparatus of the said embodiment.

(Application example 7)
64 and 65 show the appearance of a mobile phone 270 to which the display device of the above embodiment is applied. The mobile phone 270 is formed by connecting an upper housing 271 and a lower housing 272 with a connecting portion (hinge portion) 273, and has a display 274, a sub-display 275, a picture light 276, and a camera 277, for example. ing. The display 274 or the sub display 275 is configured by the display device of the above embodiment.

  While the present disclosure has been described with reference to the embodiments and examples, the present disclosure is not limited to the above embodiments, and various modifications can be made.

  For example, the material and thickness of each layer, the film formation method, and the film formation conditions described in the above embodiment are not limited, and other materials and thicknesses may be used. It is good also as conditions.

  Moreover, in the said embodiment and Example, although the structure of organic TFT100,100A-100F was mentioned concretely and demonstrated, it is not necessary to provide all the layers and you may further provide other layers. .

  Furthermore, the present disclosure can be applied to other electronic devices such as a sensor array in addition to the display device.

In addition, this indication can also take the following structures.
(1)
Applying a solution in which an organic semiconductor material and an insulating layer material are mixed;
Forming an organic semiconductor layer and an insulating layer in contact with an upper surface of the organic semiconductor layer by utilizing phase separation.
(2)
Applying the solution to a substrate;
The method for manufacturing a semiconductor device according to (1), wherein a two-layer structure including the organic semiconductor layer and the insulating layer in this order from the base material side is formed by phase separation.
(3)
Applying the solution to a substrate;
The upper organic semiconductor layer is removed after forming a three-layer structure including the lower organic semiconductor layer, the insulating layer, and the upper organic semiconductor layer in this order from the base material side by phase separation. Semiconductor device manufacturing method.
(4)
Applying the solution to a blanket;
Forming an inverted two-layer structure including the insulating layer and the organic semiconductor layer in this order from the blanket side by phase separation;
By transferring the reverse two-layer structure from the blanket to the base material, a forward two-layer structure including the organic semiconductor layer and the insulating layer in this order from the base material side is formed on the base material. The manufacturing method of the semiconductor device of description.
(5)
The method for manufacturing a semiconductor device according to any one of (1) to (4), wherein a bottom-gate thin film transistor having the insulating layer as a channel protective film is formed.
(6)
The method for manufacturing a semiconductor device according to any one of (1) to (4), wherein a top gate thin film transistor having the insulating layer as a gate insulating film or a part of the gate insulating film is formed.
(7)
The method for manufacturing a semiconductor device according to (5) or (6), wherein a top contact thin film transistor is formed by doping the organic semiconductor layer using the insulating layer as a mask.
(8)
As the insulating layer material, polystyrene, polymethyl methacrylate, polyethylene, polypropylene, polybutadiene, polyisoprene, polyolefin, polycarbonate, polyimide, polyamide, poly (α-methylstyrene), poly (α-ethylstyrene), poly (α-propyl) Styrene), poly (α-butylstyrene), poly (4-methylstyrene), polyacrylonitrile, polyvinylcarbazole, polyvinylidene fluoride, polyvinyl butyral, polyvinyltoluene, poly (4-vinylbiphenyl), halides of the above polymers, The method for manufacturing a semiconductor device according to any one of (1) to (7), wherein the copolymer is used.
(9)
An organic semiconductor layer;
An insulating layer provided in contact with the upper surface of the organic semiconductor layer,
The organic semiconductor layer and the insulating layer are formed by utilizing phase separation.
(10)
The semiconductor device according to (9), wherein the semiconductor device is a bottom-gate thin film transistor having the insulating layer as a channel protective film.
(11)
The semiconductor device according to (9), wherein the semiconductor device is a top-gate thin film transistor having the insulating layer as a gate insulating film or a part of the gate insulating film.
(12)
The semiconductor device according to (10) or (11), wherein the semiconductor device is a top contact thin film transistor doped in a region exposed from the insulating layer in the organic semiconductor layer.
(13)
A semiconductor device,
The semiconductor device includes:
An organic semiconductor layer;
An insulating layer provided in contact with the upper surface of the organic semiconductor layer,
The organic semiconductor layer and the insulating layer are formed using phase separation. Electronic equipment.

  DESCRIPTION OF SYMBOLS 10 ... Base material, 11 ... Board | substrate, 20 ... Gate electrode, 30 ... Gate insulating film (2nd gate insulating film), 40 ... Organic-semiconductor layer, 41 ... Channel layer, 41A ... Upper end part of a channel layer, 42 ... Contact part 50 ... Channel protective film (first gate insulating film), 60S ... Source electrode, 60D ... Drain electrode, 61 ... Injection layer, 62 ... Interlayer insulating film, 63 ... Wiring layer, 70 ... Coating film, 71 ... Two-layer structure 72 ... Three-layer structure 73 ... Reverse two-layer structure 74 ... Forward two-layer structure 80 ... Etching mask 90 ... Blanket P ... Interface

Claims (13)

Applying a solution in which an organic semiconductor material and an insulating layer material are mixed;
Forming an organic semiconductor layer and an insulating layer in contact with an upper surface of the organic semiconductor layer by utilizing phase separation. Applying the solution to a substrate;
The method for manufacturing a semiconductor device according to claim 1, wherein a two-layer structure including the organic semiconductor layer and the insulating layer in this order from the base material side is formed by phase separation. Applying the solution to a substrate;
The upper organic semiconductor layer is removed after forming a three-layer structure including the lower organic semiconductor layer, the insulating layer, and the upper organic semiconductor layer in this order from the substrate side by phase separation. A method for manufacturing a semiconductor device. Applying the solution to a blanket;
Forming an inverted two-layer structure including the insulating layer and the organic semiconductor layer in this order from the blanket side by phase separation;
The forward two-layer structure including the organic semiconductor layer and the insulating layer in this order from the base material side is formed on the base material by transferring the reverse two-layer structure from the blanket to the base material. The manufacturing method of the semiconductor device of description. The method for manufacturing a semiconductor device according to claim 1, wherein a bottom-gate thin film transistor having the insulating layer as a channel protective film is formed. The method for manufacturing a semiconductor device according to claim 1, wherein a top gate thin film transistor having the insulating layer as a gate insulating film or a part of the gate insulating film is formed. The method for manufacturing a semiconductor device according to claim 5, wherein a top contact thin film transistor is formed by doping the organic semiconductor layer using the insulating layer as a mask. As the insulating layer material, polystyrene, polymethyl methacrylate, polyethylene, polypropylene, polybutadiene, polyisoprene, polyolefin, polycarbonate, polyimide, polyamide, poly (α-methylstyrene), poly (α-ethylstyrene), poly (α-propyl) Styrene), poly (α-butylstyrene), poly (4-methylstyrene), polyacrylonitrile, polyvinylcarbazole, polyvinylidene fluoride, polyvinyl butyral, polyvinyltoluene, poly (4-vinylbiphenyl), halides of the above polymers, The method for manufacturing a semiconductor device according to claim 1, wherein a copolymer thereof is used. An organic semiconductor layer;
An insulating layer provided in contact with the upper surface of the organic semiconductor layer,
The organic semiconductor layer and the insulating layer are formed by utilizing phase separation. The semiconductor device according to claim 9, wherein the semiconductor device is a bottom-gate thin film transistor having the insulating layer as a channel protective film. The semiconductor device according to claim 9, wherein the semiconductor device is a top-gate thin film transistor having the insulating layer as a gate insulating film or a part of the gate insulating film. The semiconductor device according to claim 10, wherein the organic semiconductor layer is a top contact thin film transistor doped in a region exposed from the insulating layer. A semiconductor device,
The semiconductor device includes:
An organic semiconductor layer;
An insulating layer provided in contact with the upper surface of the organic semiconductor layer,
The organic semiconductor layer and the insulating layer are formed using phase separation. Electronic equipment.

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