JP2014036054A - Single side polishing method of wafer - Google Patents
Single side polishing method of wafer Download PDFInfo
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- JP2014036054A JP2014036054A JP2012175255A JP2012175255A JP2014036054A JP 2014036054 A JP2014036054 A JP 2014036054A JP 2012175255 A JP2012175255 A JP 2012175255A JP 2012175255 A JP2012175255 A JP 2012175255A JP 2014036054 A JP2014036054 A JP 2014036054A
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Abstract
Description
本発明は、接着剤によってプレートに固定したシリコン等の半導体ウェーハの片面を鏡面研磨するウェーハの片面研磨方法に関する。 The present invention relates to a wafer single-side polishing method for mirror-polishing one side of a semiconductor wafer such as silicon fixed to a plate with an adhesive.
単結晶インゴットをスライスしたシリコン等の半導体ウェーハは、平面研削（ラッピング）工程、エッチング工程、鏡面研磨（ポリッシング）工程を経て、最終洗浄されることにより、ポリッシュドウェーハに加工される。このうち、エッチング工程後の鏡面研磨工程の一態様として、接着剤によってプレートに固定したウェーハの片面を、定盤に設けられた研磨布に接触させて、プレートおよび定盤を回転させることによってウェーハの片面を研磨する方法がある。 A semiconductor wafer such as silicon obtained by slicing a single crystal ingot is processed into a polished wafer by final cleaning through a surface grinding (lapping) process, an etching process, and a mirror polishing (polishing) process. Among these, as one aspect of the mirror polishing process after the etching process, one surface of the wafer fixed to the plate with an adhesive is brought into contact with the polishing cloth provided on the surface plate, and the wafer is rotated by rotating the plate and the surface plate. There is a method of polishing one side.
この際用いられる接着剤には、グリコールフタレート系樹脂、エポキシ系樹脂、ケトン系樹脂などの非パラフィン系樹脂が知られており、中でもビスフェノールＡ型エポキシ樹脂が多く用いられている。また、特許文献１には、軟化点が６５〜９５℃の範囲にあるノボラック型エポキシ樹脂および溶剤からなる接着剤を用いることにより、片面研磨後にウェーハをプレートから容易に剥離でき、かつ、剥離後のプレートの洗浄（接着剤の除去）を容易に行なうことができることが記載されている。 Non-paraffinic resins such as glycol phthalate resins, epoxy resins, and ketone resins are known as adhesives used at this time, and among them, bisphenol A type epoxy resins are often used. Further, in Patent Document 1, by using an adhesive composed of a novolac type epoxy resin having a softening point in the range of 65 to 95 ° C. and a solvent, the wafer can be easily peeled off from the plate after single-side polishing, and after peeling. It is described that the plate can be easily washed (removal of the adhesive).
一般に片面研磨を行うと、ウェーハの面内中心部に比べて外周部の研磨量が大きくなる、いわゆる外周ダレが生じる傾向にある。しかし、一枚のウェーハからより多くのデバイスを作製する観点から、この外周ダレを抑制し、ウェーハ外周部でも高い平坦度を維持するように研磨することが求められている。 In general, when single-side polishing is performed, the amount of polishing at the outer peripheral portion tends to be larger than the central portion in the surface of the wafer, so-called peripheral sagging tends to occur. However, from the viewpoint of manufacturing more devices from a single wafer, it is required to polish the outer peripheral sagging and suppress the outer peripheral sagging so as to maintain high flatness.
しかしながら、本発明者らは、従来の接着剤を用いてウェーハをプレートに固定して片面研磨を行った場合、片面研磨後のウェーハ外周部の平坦度は十分ではなく、これを改善できる余地があるとの認識を持つに至った。 However, when the present inventors fixed a wafer to a plate using a conventional adhesive and performed single-side polishing, the flatness of the outer peripheral portion of the wafer after single-side polishing is not sufficient, and there is room for improvement. I came to realize that there was.
そこで本発明は、上記課題に鑑み、ウェーハ外周部の平坦度を改善することが可能なウェーハの片面研磨方法を提供することを目的とする。 In view of the above problems, an object of the present invention is to provide a single-side polishing method for a wafer that can improve the flatness of the outer peripheral portion of the wafer.
従来、ウェーハをプレートに固定する接着剤の物性と、研磨後のウェーハ外周部の平坦度との関係は知られておらず、ウェーハ外周部の平坦度を改善するという観点からの接着剤の選定は行なわれてこなかった。特許文献１でも、片面研磨後の剥離性および洗浄性に着目しているに過ぎない。そこで、本発明者らは、接着剤の物性に着目して、上記目的を達成すべく鋭意検討した検討したところ、軟化点および１００℃における流動粘度がそれぞれ所定の条件を満たす固形分を有する接着剤を用いてウェーハをプレートに固定して片面研磨を行った場合に、ウェーハ外周部の平坦度が特に改善されることを見出した。 Conventionally, the relationship between the physical properties of the adhesive that fixes the wafer to the plate and the flatness of the outer periphery of the wafer after polishing is not known, and the selection of the adhesive from the viewpoint of improving the flatness of the outer periphery of the wafer Has not been done. Even Patent Document 1 focuses only on the peelability and cleanability after single-side polishing. Accordingly, the present inventors focused on the physical properties of the adhesive, and conducted an intensive study to achieve the above object. As a result, the softening point and the flow viscosity at 100 ° C. have a solid content that satisfies a predetermined condition. It has been found that the flatness of the outer peripheral portion of the wafer is particularly improved when single-side polishing is performed by fixing the wafer to the plate using an agent.
以上の知見に基づき完成した本発明の要旨構成は以下のとおりである。
本発明のウェーハの片面研磨方法は、接着剤によってプレートに固定したウェーハの片面を、定盤に設けられた研磨布に接触させて、前記プレートおよび前記定盤を回転させることによって前記ウェーハの片面を研磨するウェーハの片面研磨方法であって、前記接着剤の固形分は、軟化点が７０〜７６℃の範囲内であり、１００℃における流動粘度が２００００〜３５０００ｃＰの範囲内であることを特徴とする。
The gist configuration of the present invention completed based on the above findings is as follows.
In the wafer single-side polishing method of the present invention, one side of the wafer is rotated by bringing the one side of the wafer fixed to the plate with an adhesive into contact with a polishing cloth provided on the surface plate and rotating the plate and the surface plate. The solid content of the adhesive is characterized in that the softening point is in the range of 70 to 76 ° C. and the flow viscosity at 100 ° C. is in the range of 20000 to 35000 cP. And
また本発明では、前記ウェーハの他面に前記接着剤を塗布し、加熱した前記プレートに前記接着剤を接触させて、前記接着剤を溶融させることにより前記ウェーハを前記プレートに固定することが好ましい。 In the present invention, it is preferable that the adhesive is applied to the other surface of the wafer, the adhesive is brought into contact with the heated plate, and the adhesive is melted to fix the wafer to the plate. .
本発明のウェーハの片面研磨方法によれば、ウェーハをプレートに固定する接着剤として、所定の軟化点および流動粘度の固形分を有する接着剤を用いたので、ウェーハ外周部の平坦度を改善することができる。 According to the wafer single-side polishing method of the present invention, since the adhesive having a predetermined softening point and a solid content having a fluid viscosity is used as an adhesive for fixing the wafer to the plate, the flatness of the wafer outer peripheral portion is improved. be able to.
以下、図面を参照しつつ本発明の実施形態を説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
図１は、本発明に従うウェーハの片面研磨方法を実施する片面研磨装置の模式斜視図である。片面研磨装置は、ウェーハを固定する例えばセラミック製のプレート１２と、このプレート１２を保持するヘッド２０とを有する。図１では見えないが、各プレート１２には、例えば５枚といった複数枚のウェーハが固定される。また、片面研磨装置は、プレート１２と対向して、表面に研磨布１８を設けた定盤１６を有する。プレート１２に固定したウェーハを研磨布１８に接触させて、ヘッド２０およびプレート１２と、定盤１６とをともに回転させ、研磨布上に研磨液を供給しながら、ウェーハの片面を研磨する。１つの定盤２０内に複数（図１では４つ）のプレート１２を配することにより、一度に多数のウェーハを同時に片面研磨することができる。 FIG. 1 is a schematic perspective view of a single-side polishing apparatus for carrying out a single-side polishing method for a wafer according to the present invention. The single-side polishing apparatus includes, for example, a ceramic plate 12 that fixes a wafer, and a head 20 that holds the plate 12. Although not visible in FIG. 1, a plurality of wafers such as five are fixed to each plate 12. Further, the single-side polishing apparatus has a surface plate 16 having a polishing cloth 18 on the surface thereof, facing the plate 12. The wafer fixed on the plate 12 is brought into contact with the polishing cloth 18, and the head 20, the plate 12, and the surface plate 16 are rotated together to polish one surface of the wafer while supplying a polishing liquid onto the polishing cloth. By disposing a plurality (four in FIG. 1) of plates 12 in one surface plate 20, a large number of wafers can be polished on one side at a time.
図２を用いて、本発明に従うウェーハの片面研磨方法の工程を説明する。図２では、ウェーハ１０の両面のうち、研磨面を片面（おもて面）１０Ａ、接着剤塗布面を他面（裏面）１０Ｂとする。まず、図２（Ａ）右図に示すように、スピンコーティング法により、ウェーハの他面１０Ｂに接着剤を塗布する。塗布する段階での接着剤は、固形成分となる樹脂と、溶剤とを少なくとも含む。一方で、図２（Ａ）左図に示すように、プレート１２は例えばホットプレートによって約１００℃に加熱される。そして、図２（Ａ）中央図に示すように、加熱したプレート１２に接着剤１４を接触させる。すると、プレート１２から接着剤１４に伝わる熱によって、溶剤が蒸発するとともに樹脂は溶融する。その後、プレート１２を冷却することにより、樹脂が固化し、ウェーハ１０がプレート１２に固定される。接着剤１４の厚さは特に限定されないが、０．５〜２μｍ程度とすることができる。 With reference to FIG. 2, the steps of the wafer single-side polishing method according to the present invention will be described. In FIG. 2, of both surfaces of the wafer 10, the polishing surface is one surface (front surface) 10 </ b> A, and the adhesive application surface is the other surface (back surface) 10 </ b> B. First, as shown in the right diagram of FIG. 2A, an adhesive is applied to the other surface 10B of the wafer by spin coating. The adhesive in the application step includes at least a resin that becomes a solid component and a solvent. On the other hand, as shown in the left figure of FIG. 2 (A), the plate 12 is heated to about 100 ° C. by a hot plate, for example. Then, as shown in the center view of FIG. 2A, the adhesive 14 is brought into contact with the heated plate 12. Then, the solvent is evaporated and the resin is melted by the heat transferred from the plate 12 to the adhesive 14. Thereafter, the plate 12 is cooled to solidify the resin, and the wafer 10 is fixed to the plate 12. The thickness of the adhesive 14 is not particularly limited, but can be about 0.5 to 2 μm.
なお、ウェーハの他面１０Ｂに接着剤を塗布後、ウェーハ１０を加熱することにより接着剤の溶媒を蒸発させ、その後、加熱したプレート１２に接着剤１４を接触させて、樹脂（固形分）を溶融させてもよい。 In addition, after apply | coating an adhesive agent to the other surface 10B of a wafer, the solvent of an adhesive agent is evaporated by heating the wafer 10, Then, the adhesive agent 14 is made to contact the heated plate 12, resin (solid content) is contacted. It may be melted.
続いて図２（Ｂ）に示すように、接着剤１４によってプレート１２に固定したウェーハの片面１０Ａを、定盤１６に設けられた研磨布１８に接触させて、プレート１２および定盤１６を回転させることによって、ウェーハの片面１０Ａを研磨する。その後、図２（Ｃ）に示すように、プレート１２をヘッド２０から取り外し、水洗、水切りを行なう。その後は図示しないが、剃刀などによってプレート１２からウェーハ１０を剥離し、ウェーハ１０は洗浄後、平坦度測定に供される。プレート１２には接着剤を除去する洗浄を行い、プレート１２は乾燥後、再度ウェーハの片面研磨に用いられる。 Subsequently, as shown in FIG. 2 (B), one side 10A of the wafer fixed to the plate 12 by the adhesive 14 is brought into contact with the polishing cloth 18 provided on the surface plate 16, and the plate 12 and the surface plate 16 are rotated. By doing so, one side 10A of the wafer is polished. Thereafter, as shown in FIG. 2C, the plate 12 is removed from the head 20, and washed with water and drained. Thereafter, although not shown, the wafer 10 is peeled from the plate 12 with a razor or the like, and the wafer 10 is subjected to flatness measurement after cleaning. The plate 12 is cleaned to remove the adhesive, and the plate 12 is dried and used again for single-side polishing of the wafer.
ここで、本発明に従う片面研磨方法の特徴は、固形分の軟化点が７０〜７６℃の範囲内であり、固形分の１００℃における流動粘度が２００００〜３５０００ｃＰの範囲内である接着剤を用いることである。本発明者らは、このような接着剤を用いてウェーハ１０をプレート１２に固定して片面研磨を行った場合に、ウェーハ外周部の平坦度が特に改善されることを見出した。このような顕著な効果が奏される作用は必ずしも明らかではないが、固形分となる樹脂がプレート１２の熱により溶融する際の流動性が適正化されて、ウェーハの他面１０Ｂの外周部への接着剤の局在が抑制され、ウェーハの他面１０Ｂに均一な厚さの接着剤の層を形成できるためと考えられる。すなわち、本発明は、単に軟化点のみに着目するのではなく、固形分の１００℃における流動粘度にも着目し、その両者を最適化するという新たな着想に基づき完成された発明である。固形分の軟化点または固形分の１００℃における流動粘度が上記範囲を外れた接着剤を用いた場合、接着剤の固形分となる樹脂が溶融する際の流動性が適正でないため、ウェーハ外周部の平坦度が劣る。なお、本発明は固形分の１００℃における流動粘度を特徴とするものであり、プレート１２が必ずしも１００℃に加熱されることに限定されず、例えば１２０℃に加熱してもよい。 Here, the single-side polishing method according to the present invention is characterized by using an adhesive having a softening point of solid content in the range of 70 to 76 ° C. and a fluid viscosity at 100 ° C. of solid content in the range of 20000 to 35000 cP. That is. The present inventors have found that when the wafer 10 is fixed to the plate 12 using such an adhesive and single-side polishing is performed, the flatness of the outer peripheral portion of the wafer is particularly improved. Although the action that exhibits such a remarkable effect is not necessarily clear, the fluidity when the resin that is a solid content is melted by the heat of the plate 12 is optimized, and the outer surface 10B of the other surface is moved to the outer peripheral portion. This is considered to be because the localization of the adhesive is suppressed and an adhesive layer having a uniform thickness can be formed on the other surface 10B of the wafer. That is, the present invention has been completed based on a new idea of not only focusing on the softening point but also focusing on the flow viscosity at 100 ° C. of the solid content and optimizing both. When using an adhesive whose softening point of solid content or flow viscosity at 100 ° C. of solid content is out of the above range, the fluidity when the resin that becomes the solid content of the adhesive melts is not appropriate. The flatness of is poor. In addition, this invention is characterized by the fluid viscosity in 100 degreeC of solid content, and is not limited to the plate 12 being necessarily heated to 100 degreeC, For example, you may heat to 120 degreeC.
本明細書において、接着剤の固形分の「軟化点」とは、ＪＩＳ Ｋ２２０７（環球法）に従い試料を規定条件下で加熱したとき、試料が規定距離まで垂れ下がるときの温度を意味する。また、接着剤の固形分の「流動粘度」とは、フローテスター定温法にて設定温度（例えば１００℃）・設定圧力下（例えば大気圧）で試料がノズルを通過する速度から算出した粘度を意味する。そして、例えば、島津製作所の流動特性評価装置（フローテスター）により求めることができる。これらの軟化点および流動粘度は、塗布する段階での接着剤から溶剤を蒸発・除去し、固形分のみとした状態で測定する。 In this specification, the “softening point” of the solid content of the adhesive means the temperature at which the sample hangs down to a specified distance when the sample is heated under specified conditions according to JIS K2207 (ring and ball method). The “flow viscosity” of the solid content of the adhesive is the viscosity calculated from the speed at which the sample passes through the nozzle at a set temperature (for example, 100 ° C.) and a set pressure (for example, atmospheric pressure) by the flow tester constant temperature method. means. Then, for example, it can be obtained by a flow characteristic evaluation apparatus (flow tester) of Shimadzu Corporation. These softening points and flow viscosities are measured in a state where only the solid content is obtained by evaporating and removing the solvent from the adhesive at the coating stage.
本発明の片面研磨方法の結果、ウェーハ外周部の平坦度はＳＦＱＲで０．１００μｍ以下、さらには０．０８０μｍ以下とすることができる。ここで、ＳＦＱＲ（Site Front least sQuares Range）とは、ＳＥＭＩ規格にかかる、ウェーハ外周部の平坦度を示す指標である。このＳＦＱＲは、具体的にはウェーハから所定寸法の矩形状のサンプルを複数取得し、取得した各サンプルについて最小二乗法により求められた基準面からの＋側および−側のそれぞれの最大変位量の絶対値の和を算出することにより求めるものである。本明細書におけるＳＦＱＲは、ウェーハ外周端から２ｍｍの領域内において、２２ｍｍ×２２ｍｍのサイトを、ＡＤＥ社製平坦度測定器（UltraScan9800）により測定した値とする。 As a result of the single-side polishing method of the present invention, the flatness of the outer peripheral portion of the wafer can be set to 0.100 μm or less, further 0.080 μm or less in terms of SFQR. Here, the SFQR (Site Front least Quares Range) is an index indicating the flatness of the outer periphery of the wafer according to the SEMI standard. Specifically, the SFQR acquires a plurality of rectangular samples of a predetermined size from a wafer, and obtains the maximum displacement amount of each of the + side and − side from the reference plane obtained by the least square method for each acquired sample. It is obtained by calculating the sum of absolute values. The SFQR in this specification is a value obtained by measuring a site of 22 mm × 22 mm with an ADE flatness measuring instrument (UltraScan 9800) within an area of 2 mm from the outer peripheral edge of the wafer.
接着剤の固形成分となる樹脂は特に限定されないが、天然樹脂のロジン系（例えばアクリル化ロジン）や、合成樹脂のウレタン系やエポキシ系などの１種または複数種を挙げることができる。また、これらの樹脂は周知の任意の合成法により得ることができる。 The resin that becomes the solid component of the adhesive is not particularly limited, and examples thereof include one or more of rosin (for example, acrylated rosin) of natural resin and urethane or epoxy of synthetic resin. These resins can be obtained by any known synthesis method.
また、使用する樹脂の数平均分子量が大きい樹脂ほど、軟化点および流動粘度が高くなる傾向もあるため、各樹脂の配合割合を変えるだけでなく、数平均分子量を調整することによって、接着剤の固形分の軟化点や流動粘度を適宜調整することができる。 In addition, since the resin having a larger number average molecular weight tends to have a higher softening point and flow viscosity, not only changing the blending ratio of each resin but also adjusting the number average molecular weight, The softening point and flow viscosity of the solid content can be adjusted as appropriate.
塗布する段階での接着剤に含まれる溶剤の種類は特に限定されず、例えばアセトン、エタノール、メタノール、イソプロピルアルコール、メチルイソブチルケトン、トルエンなどの有機溶媒、あるいは、これらとエチレングリコールモノエチルエーテル、エチレングリコールモノエチルエーテルアセテート、ジエチレングリコールジメチルエーテルなどのエーテル系溶媒との混合溶媒とすることができる。 The type of solvent contained in the adhesive at the application stage is not particularly limited. For example, organic solvents such as acetone, ethanol, methanol, isopropyl alcohol, methyl isobutyl ketone, and toluene, or these and ethylene glycol monoethyl ether, ethylene A mixed solvent with an ether solvent such as glycol monoethyl ether acetate or diethylene glycol dimethyl ether can be used.
塗布する段階での接着剤に占める固形成分となる樹脂の割合は、１０〜３５％とすることが好ましい。１０％未満の場合、ウェーハへの塗布時に膜厚が薄く、膜切れが発生するおそれがあり、３５％超えの場合、固形分が結晶化したり、ウェーハへの塗布時に膜厚が大きくなり、膜厚むらが発生しやすくなるおそれがあるからである。 The ratio of the resin serving as a solid component in the adhesive at the application stage is preferably 10 to 35%. If it is less than 10%, the film thickness may be thin when applied to the wafer and the film may break. If it exceeds 35%, the solid content may crystallize or the film thickness may increase when applied to the wafer. This is because uneven thickness is likely to occur.
接着剤は、樹脂および溶剤に加えて、随意に他の添加剤を含んでもよい。添加剤としては、変性ロジン、ノニオン界面活性剤などが挙げられる。その場合、塗布する段階での接着剤に占める添加剤の合計含有量は、接着剤としての機能を阻害しない範囲であればよく、例えば１％以内とすることが好ましい。 The adhesive may optionally contain other additives in addition to the resin and solvent. Examples of the additive include modified rosin and nonionic surfactant. In that case, the total content of additives in the adhesive at the stage of application may be in a range that does not hinder the function as an adhesive, and is preferably within 1%, for example.
本発明で用いる塗布する段階での接着剤は、上記の溶剤に各種樹脂および添加剤を加え、加熱することにより樹脂を溶剤に溶解させて、得ることができる。 The adhesive at the coating stage used in the present invention can be obtained by adding various resins and additives to the above solvent and heating to dissolve the resin in the solvent.
本発明においては、図２（Ａ）でウェーハ１０をプレート１２に固定するに先立ち、ウェーハの他面１０Ｂ、すなわち図２（Ａ）右図に示す接着剤塗布面を研磨することが好ましい。研磨によりウェーハの他面１０Ｂの表面粗さを低減することで、接着剤の固形分となる樹脂がプレート１２の熱により溶融する際の流動性がより適正化されて、ウェーハ外周部の平坦度をより改善することができるからである。 In the present invention, prior to fixing the wafer 10 to the plate 12 in FIG. 2A, it is preferable to polish the other surface 10B of the wafer, that is, the adhesive-coated surface shown in the right view of FIG. By reducing the surface roughness of the other surface 10B of the wafer by polishing, the fluidity when the resin that is the solid content of the adhesive is melted by the heat of the plate 12 is made more appropriate, and the flatness of the outer peripheral portion of the wafer It is because it can improve more.
通常、エッチング工程後のウェーハの他面１０Ｂの表面粗さ（二乗平均平方根Ｒｑ）は、４０００〜４５００Å程度となる。そのため、ウェーハの他面１０Ｂを鏡面研磨することにより、その表面粗さ（Ｒｑ）を、好ましくは２０００Å以下、より好ましくは１５００Å以下とする。 Usually, the surface roughness (root mean square Rq) of the other surface 10B of the wafer after the etching step is about 4000 to 4500 mm. Therefore, the other surface 10B of the wafer is mirror-polished so that the surface roughness (Rq) is preferably 2000 mm or less, more preferably 1500 mm or less.
プレート１２の材質や寸法は特に限定されないが、材質は、例えばセラミック、などとすることができ、寸法は、例えば直径５７６ｍｍの円盤状とすることができる。また、研磨布１８の種類は限定されない。例えば、単層式の研磨布でもよいし、研磨布層の裏面にスポンジ層が形成された２層式の研磨布でもよい。単層式における研磨布および２層式における研磨布層としては、例えば、ウレタンフォームなどの合成樹脂発泡体からなる研磨布、ポリエステル繊維製の不織布にウレタン樹脂を含浸させた硬質なベロアタイプの研磨布、不織布の基布の上にウレタン樹脂を発泡させたスエードパッドなどを採用することができる。研磨圧力、定盤およびプレートの回転速度、研磨液の種類などの、その他の研磨条件も特に限定されず、任意の条件とすることができる。 The material and dimensions of the plate 12 are not particularly limited, but the material can be ceramic, for example, and the dimensions can be a disk shape having a diameter of 576 mm, for example. Moreover, the kind of polishing cloth 18 is not limited. For example, a single-layer type polishing cloth or a two-layer type polishing cloth in which a sponge layer is formed on the back surface of the polishing cloth layer may be used. As the polishing cloth in the single layer type and the polishing cloth layer in the two layer type, for example, a polishing cloth made of a synthetic resin foam such as urethane foam, a hard velor type polishing in which a polyester fiber nonwoven fabric is impregnated with a urethane resin A suede pad in which a urethane resin is foamed on a cloth or non-woven cloth base cloth can be employed. Other polishing conditions such as the polishing pressure, the rotation speed of the surface plate and the plate, and the type of the polishing liquid are not particularly limited, and can be set to arbitrary conditions.
（実験例１）
エッチング工程後のＲｑが４５００Å程度のシリコンウェーハ（直径：２００ｍｍ）を用意し、ウェーハの裏面を研磨してＲｑを１５００Åとした。シリコンウェーハの裏面に後述の接着剤を塗布した。１００℃に加熱したセラミック製のプレートにシリコンウェーハを押しつけ、その後冷却し、接着剤によりシリコンウェーハをプレートに固定した。その後、不織布の研磨布を定盤の表面に設置した、図１に示す片面研磨装置によりシリコンウェーハのおもて面に対して鏡面研磨を行った。なお、１枚のプレートには５枚のシリコンウェーハを固定し、１回の片面研磨により５枚×４プレートのシリコンウェーハを加工した。研磨条件は以下のとおりとした。
研磨圧力：３００ｇ／ｃｍ２
研磨時間：３００秒
研磨液：アルカリ研磨液（コロイダルシリカ含有）
(Experimental example 1)
A silicon wafer (diameter: 200 mm) having an Rq of about 4500 mm after the etching process was prepared, and the back surface of the wafer was polished to give Rq of 1500 mm. The adhesive described below was applied to the back surface of the silicon wafer. The silicon wafer was pressed against a ceramic plate heated to 100 ° C., then cooled, and the silicon wafer was fixed to the plate with an adhesive. Thereafter, the front surface of the silicon wafer was mirror-polished by a single-side polishing apparatus shown in FIG. 1 in which a non-woven polishing cloth was placed on the surface of the surface plate. Five silicon wafers were fixed to one plate, and a silicon wafer of 5 × 4 plates was processed by one-side polishing. The polishing conditions were as follows.
Polishing pressure: 300 g / cm 2
Polishing time: 300 seconds Polishing liquid: Alkaline polishing liquid (containing colloidal silica)
用いた接着剤について説明する。接着剤の固形分としては、天然樹脂であるロジン係剤を用い、添加する誘導体割合や樹脂の数平均分子量などを調整して、表１に示すような固形分の軟化点および流動粘度が異なる接着剤を用意した。なお、いずれの接着剤も溶剤（メタノール、メチルイソブチルケトン、トルエンの混合液）に溶解し、接着剤に占める樹脂の割合は２０％としたものである。 The used adhesive will be described. The solid content of the adhesive is a natural resin rosin agent, and the ratio of the added derivative and the number average molecular weight of the resin are adjusted, so that the softening point and flow viscosity of the solid content shown in Table 1 are different. An adhesive was prepared. Each adhesive was dissolved in a solvent (mixed solution of methanol, methyl isobutyl ketone and toluene), and the ratio of the resin in the adhesive was 20%.
それぞれの接着剤を用いた場合について、シリコンウェーハのおもて面の外周部のＳＦＱＲを既述の方法により測定した。５枚×４プレートの平均値を表１に示す。 When each adhesive was used, SFQR of the outer peripheral portion of the front surface of the silicon wafer was measured by the method described above. Table 1 shows the average value of 5 sheets × 4 plates.
表１から明らかなように、軟化点および１００℃における流動粘度がともに本発明の規定する範囲内の場合には、ＳＦＱＲが０．１００μｍ以下という高平坦度を得ることができ、ＳＦＱＲが０．０９０μｍ以下となる特に好ましい場合もあった。一方、軟化点および１００℃における流動粘度の少なくとも片方が本発明の規定する範囲を外れる場合、ＳＦＱＲが０．１００μｍ超えとなり平坦度に劣った。 As is apparent from Table 1, when both the softening point and the flow viscosity at 100 ° C. are within the range defined by the present invention, a high flatness with an SFQR of 0.100 μm or less can be obtained, and the SFQR is 0.00. In some cases, it was particularly preferable to be 090 μm or less. On the other hand, when at least one of the softening point and the flow viscosity at 100 ° C. is outside the range defined by the present invention, the SFQR exceeds 0.100 μm and the flatness is poor.
本発明によれば、ウェーハ外周部の平坦度を改善することが可能なウェーハの片面研磨方法を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the single-sided grinding | polishing method of the wafer which can improve the flatness of a wafer outer peripheral part can be provided.
１０ ウェーハ
１０Ａ ウェーハの片面（研磨面）
１０Ｂ ウェーハの他面（接着剤塗布面）
１２ プレート
１４ 接着剤
１６ 定盤
１８ 研磨布
２０ ヘッド
10 Wafer 10A One side of wafer (Polished surface)
10B Wafer other side (adhesive coated side)
12 Plate 14 Adhesive 16 Surface plate 18 Abrasive cloth 20 Head
Claims (2)
前記接着剤の固形分は、軟化点が７０〜７６℃の範囲内であり、１００℃における流動粘度が２００００〜３５０００ｃＰの範囲内であることを特徴とするウェーハの片面研磨方法。 A wafer single-side polishing method in which one side of a wafer fixed on a plate with an adhesive is brought into contact with a polishing cloth provided on a surface plate and the surface of the wafer is polished by rotating the plate and the surface plate. And
The single-side polishing method for a wafer, wherein the solid content of the adhesive has a softening point in the range of 70 to 76 ° C and a flow viscosity at 100 ° C in the range of 20000 to 35000 cP.
The wafer according to claim 1, wherein the adhesive is applied to the other surface of the wafer, the adhesive solution is brought into contact with the heated plate, and the adhesive is melted to fix the wafer to the plate. One side polishing method.
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|---|---|---|---|---|
| JPH04111314A (en) * | 1990-08-31 | 1992-04-13 | Nippon Steel Chem Co Ltd | Wafer polishing adhesive |
| JP2000212540A (en) * | 1999-01-28 | 2000-08-02 | Sekisui Chem Co Ltd | Reactive hot melt adhesive composition and adhesion |
| JP2000265151A (en) * | 1999-03-17 | 2000-09-26 | The Inctec Inc | Temporary liquid adhesive |
| JP2001122942A (en) * | 1999-10-26 | 2001-05-08 | The Inctec Inc | Alkali-soluble resin, method for producing the same and alkali-soluble adhesive |
| US20040121618A1 (en) * | 2002-12-20 | 2004-06-24 | Moore John C. | Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing |
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2012
- 2012-08-07 JP JP2012175255A patent/JP6089484B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04111314A (en) * | 1990-08-31 | 1992-04-13 | Nippon Steel Chem Co Ltd | Wafer polishing adhesive |
| JP2000212540A (en) * | 1999-01-28 | 2000-08-02 | Sekisui Chem Co Ltd | Reactive hot melt adhesive composition and adhesion |
| JP2000265151A (en) * | 1999-03-17 | 2000-09-26 | The Inctec Inc | Temporary liquid adhesive |
| JP2001122942A (en) * | 1999-10-26 | 2001-05-08 | The Inctec Inc | Alkali-soluble resin, method for producing the same and alkali-soluble adhesive |
| US20040121618A1 (en) * | 2002-12-20 | 2004-06-24 | Moore John C. | Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing |
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