JP2013545273A - 酸化物薄膜トランジスタアレイの製造方法及び酸化物薄膜トランジスタアレイを組み込んだ装置 - Google Patents
酸化物薄膜トランジスタアレイの製造方法及び酸化物薄膜トランジスタアレイを組み込んだ装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 48
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000004544 sputter deposition Methods 0.000 claims abstract description 37
- 230000008569 process Effects 0.000 claims abstract description 30
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- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 claims abstract description 5
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- 239000011521 glass Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 23
- 238000000059 patterning Methods 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
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- 238000000151 deposition Methods 0.000 claims description 10
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- 239000010703 silicon Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 239000005361 soda-lime glass Substances 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 238000001994 activation Methods 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
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- 238000003491 array Methods 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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Abstract
【解決手段】 発明の一実施形態は酸化物薄膜トランジスタアレイの製造方法と、この酸化物薄膜トランジスタアレイアレイを組み込んだ装置に関する。任意のバリア層、半導体、ゲート絶縁体、及び/又はゲート金属のブランケット層が基板上に成膜される。これら及び/又はその他の層はソーダ石灰又はホウケイ酸基板上に低温又は室温でスパッタリングにより成膜することができる。これら層はその後、発明の一実施形態により、TFTアレイ製造時にパターニングされ、及び/又は更なる処理を施される。発明の一実施形態では、全ての又は実質全てのTFT工程はアニール処理後の活性化処理まで、例えば、150℃以下のような低温で実行することができ、アニール処理後の処理は比較的低温(例えば、200〜250℃)で実行することができる。
【選択図】図3B
Description
これら及びその他の特徴及び長所は、図面とともに、発明の代表的な例示的実施形態の以下の詳細な記載を参照することにより、より良く、より完全に理解されるであろう。
移動度: >5cm2/Vsec
閾値電圧: 0から5∨
サブスレショルドスロープ: <0.5∨/decade
オフ電流: <0.1pA/μm@∨ds=1∨
安定度: アモルファスシリコンTFTよりも優れる
Claims (23)
- 電子装置向けのTFT基板の製造方法において、
ガラス基板を提供し、
前記ガラス基板上に直接又は間接的に、酸化物半導体層を低温又は室温でスパッタリングによって成膜し、
前記酸化物半導体ブランケット層上に直接又は間接的に、ゲート絶縁体ブランケット層を成膜し、
前記ゲート絶縁体ブランケット層上に直接又は間接的に、ゲート金属ブランケット層を成膜し、
前記ゲート金属ブランケット層上の1つ又は複数の部分にマスクを使用し、1つ又は複数の対応するマスク領域と1つ又は複数の対応する非マスク領域との境界を定め、
前記1つ又は複数の非マスク領域において、又はその領域に隣接する領域において、前記ゲート金属ブランケット層の部分と前記ゲート絶縁体ブランケット層の部分とを除去し、
前記1つ又は複数の非マスク領域の、又はその領域に隣接する領域の前記酸化物半導体層の導電性を向上させ、
実質的に前記基板全体を覆うパッシベーション層を成膜し、
前記パッシベーション層をパターニングし、ソース及びドレインのコンタクトホールの境界を定め、
ソース及びドレインの接続層を成膜する、
ことを含むTFT基板の製造方法。 - 前記酸化物半導体材料が酸化インジウム・ガリウム・亜鉛酸化物(IGZO)を含む、
請求項1に記載のTFT基板の製造方法。 - 前記ガラス基板がソーダ石灰基板である、
請求項2に記載の方法。 - 更に、前記ガラス基板上に直接接触するようにシリコン含有バリア層を成膜することを含む、
請求項3に記載のTFT基板の製造方法。 - 前記マスクがフォトレジストである、
請求項2に記載のTFT基板の製造方法。 - 前記半導体層の導電性向上がプラズマ処理により達成される、
請求項2に記載のTFT基板の製造方法。 - 前記プラズマ処理が水素又はアルゴンプラズマ処理である、
請求項6に記載のTFT基板の製造方法。 - 更に、ソース及びドレインの接続のための成膜に続いて、前記基板とその上に形成される層のアニール処理を含む、
請求項2に記載のTFT基板の製造方法。 - 前記アニール処理が約250℃以下の温度で実行される、
請求項8に記載のTFT基板の製造方法。 - 工程温度が前記アニール処理前に150℃を超えない、
請求項9に記載のTFT基板の製造方法。 - 電子ディスプレイ装置の製造方法において、
請求項1に記載のTFT基板製造方法を含む、
電子ディスプレイ装置の製造方法。 - 更に、
カラーフィルタ基板を提供し、
前記カラーフィルタ基板と前記TFT基板の間に液晶材料層を成膜することを含む、
請求項11に記載の電子ディスプレイ装置の製造方法。 - 電子装置向けのTFT基板製造で使用される被覆物の製造方法において、
ガラス基板を提供し、
前記ガラス基板上に直接又は間接的に、酸化物半導体層を低温又は室温でスパッタリングにより成膜し、
前記酸化物半導体ブランケット層上に直接又は間接的に、ゲート絶縁体ブランケット層を成膜し、
前記ゲート絶縁体ブランケット層上に直接又は間接的に、ゲート金属ブランケット層を成膜する、
ことを含み、
マスクが、前記ゲート金属ブランケット層上の1つ又は複数の部分に使用され、1つ又は複数の対応するマスク領域と1つ又は複数の対応する非マスク領域の境界を定め、
前記ゲート金属ブランケット層の部分と前記ゲート絶縁体ブランケット層の部分が、前記1つ又は複数の非マスク領域において、又はその領域に隣接する領域において、除去され、
前記酸化物半導体層の導電性が、前記1つ又は複数の非マスク領域において、又はその領域に隣接する領域において向上させられ、
パッシベーション層が、実質前記基板全体を覆うように成膜され、
前記パッシベーション層が、パターニングされ、ソース及びドレインのコンタクトホールの境界を定め、
ソース及びドレインの接続層が成膜される、
被覆物の製造方法。 - 前記酸化物半導体材料が酸化インジウム・ガリウム・亜鉛酸化物(IGZO)である、
請求項13に記載の被覆物の製造方法。 - 前記ガラス基板がソーダ石灰基板である、
請求項13又は14に記載の被覆物の製造方法。 - 更に、前記ガラス基板上に直接接触するようにシリコン含有バリア層を成膜することを含む、
請求項15に記載の被覆物の製造方法。 - 前記半導体層の導電性を水素又はアルゴンプラズマ処理により向上させる、
請求項13に記載の被覆物の製造方法。 - 前記基板とその上に形成された層が、前記ソースとドレインの接続成膜に続いて約250℃以下の温度でアニール処理される、
請求項13に記載の被覆物の製造方法。 - 工程温度が前記アニール処理前に150℃を超えない、
請求項18に記載の被覆物の製造方法。 - 電子装置用のTFT基板の製造方法において、
ソーダ石灰ガラス基板を提供し、
実質的に前記ガラス基板の主面全体上に直接又は間接的に、酸化物半導体層を低温又は室温でスパッタリングにより成膜し、
前記酸化物半導体層の少なくとも複数部分の上から、実質的にガラス基板の主面全面にゲート絶縁体層を成膜し、
前記ゲート絶縁体層の少なくとも複数の部分上に直接又は間接的に、ゲート金属層を成膜し、
前記ゲート金属層の成膜前に前記酸化物半導体層をパターニングし、
前記酸化物半導体層の複数の部分の導電性を向上させ、
実質的に前記基板全体上にパッシベーション層を成膜し、
前記パッシベーション層をパターニングし、ソース及びドレインのコンタクトホールの境界を定め、
ソース及びドレインの接続層を成膜する、
ことを含むTFT基板の製造方法。 - 前記酸化物半導体層のパターニングが前記ゲート絶縁体層の成膜前に実行される、
請求項20に記載のTFT基板の製造方法。 - 前記酸化物半導体層と前記ゲート絶縁体層とが一緒にパターニングされる、
請求項20に記載のTFT基板の製造方法。 - TFT基板を含む電子装置において、
ソーダ石灰ガラス基板と、
前記ソーダ石灰ガラス基板上に直接又は間接的に、低温又は室温でスパッタリングにより成膜されたシリコン含有バリア層と、
前記バリア層上に直接又は間接的に、低温又は室温でスパッタリングにより成膜された、IGZO、アモルファス又は多結晶の酸化亜鉛(ZnO)、酸化亜鉛スズ(ZnSnO)、又は酸化インジウム亜鉛(InZnO)を含む酸化物半導体層と、
前記酸化物半導体層上に直接又は間接的に、低温又は室温でスパッタリングにより成膜されたゲート絶縁体層と、
前記ゲート絶縁体層上に直接又は間接的に、低温又は室温でスパッタリングにより成膜されたゲート金属層と、
を含み、
前記ゲート絶縁体層と前記ゲート金属層の1つ又は複数部分が、その下にある前記酸化物半導体層を露出させるため除去され、
前記酸化物半導体層の1つ又は複数部分が、少なくとも1つの島状構造を形成するために除去され、前記の少なくとも1つの島状構造がその導電性向上のためプラズマ処理され、
パッシベーション層が、前記バリア層、前記の少なくとも1つの島状構造、及び前記ゲート絶縁体層の上に成膜され、前記パッシベーション層が、ソースのコンタクトホール及びドレインのコンタクトホールを形成するためにパターニングされ、
前記パッシベーション層の少なくとも1つの部分上において、ソースのコンタクト及びドレインのコンタクトホールの中に、ソースとドレインの配線が成膜されている、
電子装置。
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JP2019165230A (ja) * | 2014-02-05 | 2019-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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US11942555B2 (en) | 2014-02-05 | 2024-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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WO2012044344A1 (en) | 2012-04-05 |
US8530273B2 (en) | 2013-09-10 |
KR20130126900A (ko) | 2013-11-21 |
CN103314431B (zh) | 2016-08-31 |
EP2622632A1 (en) | 2013-08-07 |
TWI575087B (zh) | 2017-03-21 |
CN103314431A (zh) | 2013-09-18 |
KR20190086587A (ko) | 2019-07-22 |
JP5969995B2 (ja) | 2016-08-17 |
US20120074399A1 (en) | 2012-03-29 |
TW201723206A (zh) | 2017-07-01 |
EP2622632B1 (en) | 2018-04-18 |
TW201231696A (en) | 2012-08-01 |
TWI639717B (zh) | 2018-11-01 |
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