JP2013258136A - Conductive particle material, conductive material, connection structure and method for producing connection structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: a conductive particle material capable of uniformly disposing a plurality of conductive particles in a wide range when used for the connection between electrodes; and a conductive material.SOLUTION: A conductive particle material according to the present invention includes a plurality of conductive particles 1 each of which includes a base material particle 2 and a first conductive layer 3 disposed on the surface of the base material particle 2. The first conductive layer 3 has a melting point of 450°C or below. The CV value of the particle size of each conductive particle 1 is larger than that of the particle size of the base material particle 2. A conductive material according to the present invention includes the conductive particle material and a binder resin.

Description

  The present invention relates to a conductive particle material including a plurality of conductive particles in which a conductive layer is disposed on the surface of a base particle, and more specifically, for example, conductive particles used for electrical connection between electrodes. Regarding materials. The present invention also relates to a conductive material, a connection structure, and a method for manufacturing the connection structure using the conductive particle material.

  Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder resin.

  In order to obtain various connection structures, the anisotropic conductive material is, for example, a connection between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)) or a connection between a semiconductor chip and a flexible printed circuit board (COF ( Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.

  For example, when the electrode of the semiconductor chip and the electrode of the glass substrate are electrically connected by the anisotropic conductive material, an anisotropic conductive material containing conductive particles is disposed on the glass substrate. Next, the semiconductor chips are stacked, and heated and pressurized. Accordingly, the anisotropic conductive material is cured, and the electrodes are electrically connected through the conductive particles to obtain a connection structure.

  As an example of the anisotropic conductive material, the following Patent Document 1 discloses an anisotropic conductive material including an adhesive composition that flows by heating, first particles, and second particles. Yes. The first particle has a core mainly composed of a low melting point metal having a melting point of 130 to 250 ° C., and a resin composition that covers the surface of the core and has a softening point lower than the melting point of the low melting point metal. And an insulating layer formed by. The second particles have an average particle diameter smaller than that of the core in the first particles. The main component of the second particle is a material having a melting point or a softening point higher than the melting point of the low melting point metal.

JP 2009-277852 A

  When an anisotropic conductive material containing conventional conductive particles as described in Patent Document 1 is used for connection between electrodes, it is difficult to efficiently arrange a plurality of conductive particles between the electrodes. Sometimes. Further, there is a problem that it is difficult to uniformly dispose a plurality of conductive particles in a wide range.

  An object of the present invention is to provide a conductive particle material capable of uniformly arranging a plurality of conductive particles in a wide range when used for connection between electrodes, and a conductive material and a connection structure using the conductive particle material. It is providing the manufacturing method of a body and a connection structure.

  According to a wide aspect of the present invention, there is provided a conductive particle material including a plurality of conductive particles each including a base particle and a first conductive layer disposed on a surface of the base particle, wherein the first A conductive particle material is provided in which the conductive layer has a melting point of 450 ° C. or less, and the CV value of the particle diameter of the conductive particles is larger than the CV value of the particle diameter of the base particles.

  In a specific aspect of the conductive particle material according to the present invention, the base particle has a base particle main body and a second conductive layer disposed on the surface of the base particle main body, The melting point of the second conductive layer is higher than the melting point of the first conductive layer.

  On the specific situation with the electroconductive particle material which concerns on this invention, melting | fusing point of a said 2nd conductive layer exceeds 450 degreeC.

  In a specific aspect of the conductive particle material according to the present invention, the absolute value of the difference between the CV value of the particle diameter of the conductive particle and the CV value of the particle diameter of the base particle is 1% or more and 10%. It is as follows.

  The conductive particle material according to the present invention is preferably dispersed in a binder resin and used as a conductive material.

  According to a wide aspect of the present invention, there is provided a conductive material including the conductive particle material described above and a binder resin.

  According to a wide aspect of the present invention, a first connection target member having a first electrode on the surface, a second connection target member having a second electrode on the surface, the first connection target member, and the A connection portion connecting the second connection target member, the connection portion is formed of a conductive material containing the conductive particle material and the binder resin described above, the first electrode and the A connection structure is provided in which a second electrode is electrically connected by the conductive particles contained in the conductive particle material.

  In a specific aspect of the connection structure according to the present invention, the conductive material is disposed in a first region which is a partial region on the first electrode to form a conductive material layer, and the first The connection part is formed by wetting and spreading the conductive material layer in a second region around the region, and the amount of the first conductive layer in the conductive particles located in the first region Is larger than the amount of the first conductive layer in the conductive particles located in the second region.

  According to a wide aspect of the present invention, a conductive material including the above-described conductive particle material and a binder resin is disposed on a first connection target member having a first electrode on the surface to form a conductive material layer. A step of laminating a second connection target member having a second electrode on the surface thereof on a surface opposite to the first connection target member side of the conductive material layer, and the conductive material layer. Heating and curing to form a connection portion, and connecting the first connection target member and the second connection target member by the connection portion, the first electrode and the second Provided is a connection structure manufacturing method for obtaining a connection structure in which an electrode is electrically connected by the conductive particles contained in the conductive particle material.

  In a specific aspect of the manufacturing method of the connection structure according to the present invention, the conductive material layer is formed in a first region which is a partial region on the first electrode, and the first region The conductive material layer is wet-spread in a surrounding second region to form the connection portion, and the amount of the first conductive layer in the conductive particles located in the first region is the second region. A connection structure larger than the amount of the first conductive layer in the conductive particles located in the region is obtained.

  The conductive particle material according to the present invention includes a plurality of conductive particles including base particles and a first conductive layer disposed on the surface of the base particles, and the melting point of the first conductive layer is 450. When the conductive particle material according to the present invention is used for the connection between the electrodes because the CV value of the particle diameter of the conductive particles is larger than the CV value of the particle diameter of the base particles. A plurality of conductive particles can be uniformly arranged in a wide range.

FIG. 1 is a cross-sectional view showing conductive particles contained in a conductive particle material according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing conductive particles contained in the conductive particle material according to the second embodiment of the present invention. FIG. 3 is a front sectional view schematically showing a connection structure using the conductive particle material according to the first embodiment of the present invention. 4A to 4C are schematic front cross-sectional views for explaining each step of obtaining a connection structure using the conductive particle material according to the first embodiment of the present invention. 5 (a) and 5 (b) are schematic plan views when a connection structure is obtained using the conductive particle material according to the first embodiment of the present invention, and FIG. It is a top view which shows the state immediately after arrange | positioning a conductive material layer, FIG.5 (b) is a top view which shows the obtained connection structure. FIGS. 6A and 6B are schematic plan views for explaining a connection structure obtained by using a plurality of conventional conductive particles.

  Details of the present invention will be described below.

  The conductive particle material according to the present invention includes a plurality of conductive particles including base particles and a first conductive layer disposed on the surface of the base particles. The conductive particle material according to the present invention is an aggregate of the conductive particles. The melting point of the first conductive layer is 450 ° C. or lower. In the conductive particle material, the CV value of the particle diameter of the conductive particles is larger than the CV value of the particle diameter of the base particles. Therefore, in the conductive particle material, the particle diameters of the base particles are relatively uniform. In the conductive particle material, the particle diameter of the conductive particles varies relatively.

  By adopting the above-described configuration in the conductive particle material according to the present invention, when the conductive particle material is used for connection between electrodes, a plurality of conductive particles can be efficiently arranged between the electrodes. For example, it is difficult to arrange a plurality of conductive particles in a specific region, and the plurality of conductive particles are easily arranged uniformly over a wide range. As a result of the difficulty in arranging a plurality of conductive particles in a specific region, the proportion of conductive particles arranged in a space where there is no electrode is reduced, and the conductive particles arranged between the first and second electrodes The ratio of can be increased. Furthermore, in the connection structure obtained by using the conductive particle material according to the present invention, the variation in the distance between the first and second electrodes is reduced, and the connection target member connected by the conductive particles is curved. It becomes difficult.

  The CV value (coefficient of variation) of the particle diameter is represented by the following formula.

  CV value (%) = (σn / Dn) × 100

For substrate particles:
σn: standard deviation of particle diameter of substrate particles Dn: number average particle diameter of substrate particles

For conductive particles:
σn: standard deviation of particle diameter of conductive particles Dn: number average particle diameter of conductive particles

  The conductive particle material according to the present invention is dispersed in a binder resin and is suitably used as a conductive material.

  From the viewpoint of efficiently arranging a plurality of conductive particles between the electrodes and uniformly arranging the plurality of conductive particles over a wide range, the CV value of the substrate particles is preferably 1% or more, more preferably. Is 2% or more, preferably 10% or less, more preferably 5% or less, and still more preferably 4% or less. Further, when the CV value of the substrate particles is not less than the above lower limit and not more than the above upper limit, in the obtained connection structure, the variation in the interval between the first and second electrodes is further reduced, and the conductive particles The connection target member to be connected is more difficult to bend.

  From the viewpoint of efficiently arranging a plurality of conductive particles between the electrodes and uniformly arranging the plurality of conductive particles over a wide range, the CV value of the particle diameter of the conductive particles and the base particle The absolute value of the difference between the particle size and the CV value is preferably 1% or more, more preferably 3% or more, preferably 15% or less, more preferably 10% or less, still more preferably 8% or less, and particularly preferably 5%. % Or less.

  The CV value of the conductive particles can be appropriately controlled by a conventionally known method. Also, the CV value of the substrate particles can be appropriately controlled by a conventionally known method. However, in the present invention, the conductive particles and the base particles are selected and used so that the CV value of the particle diameter of the conductive particles is larger than the CV value of the particle diameter of the base particles.

  In the above conductive particle material, as a method for controlling the CV value of the conductive particles and the CV value of the particle diameter of the base material particles, the conductive particles selected (classified, etc.) to have a predetermined particle diameter using a sieve or the like. A method using conductive particles, a method using base particles selected (classified, etc.) so as to have a predetermined particle diameter using a sieve, and the like, and controlling the thickness of the first conductive layer formed on the surface of the base particles And the like. As a method of controlling the thickness of the first conductive layer, a method of controlling the thickness of the first conductive layer by a theta composer and a step of forming the first conductive layer by inorganic electrolytic plating are performed at the plating stage. A method of taking out the conductive particles on which the first conductive layer is formed by dividing into a plurality of times (for example, an initial stage, a middle stage, and a late stage of plating) can be mentioned. For example, when the first conductive layer is a solder layer, a method of putting solder powder having a small particle diameter in the initial stage and putting solder powder having a large particle diameter in the latter stage when the raw material solder powder is put into the theta composer Etc. Moreover, you may obtain the electroconductive particle material by mixing several electroconductive particle which formed the 1st electroconductive layer separately.

  Hereinafter, the present invention will be clarified by giving specific embodiments and examples of the present invention with reference to the drawings.

(Conductive particle material)
In FIG. 1, the electroconductive particle contained in the electroconductive particle material which concerns on the 1st Embodiment of this invention is shown with sectional drawing.

  A conductive particle 1 shown in FIG. 1 includes a base particle 2 and a first conductive layer 3 disposed on the surface of the base particle 2. The conductive particle 1 is a coated particle in which the surface of the base particle 2 is coated with the first conductive layer 3. The melting point of the first conductive layer 3 is 450 ° C. or less.

  The base particle 2 includes a base particle body 6 and a second conductive layer 7 disposed on the surface of the base particle body 6. Therefore, the conductive particles 1 include the base particle main body 6, the second conductive layer 7 disposed on the surface of the base particle main body 6, and the first disposed on the surface of the second conductive layer 7. Conductive layer 3. The melting point of the second conductive layer 7 is higher than the melting point of the first conductive layer 3.

  In FIG. 2, the electroconductive particle contained in the electroconductive particle material which concerns on the 2nd Embodiment of this invention is shown with sectional drawing.

  The electroconductive particle 11 shown in FIG. 2 is provided with the base particle 12 and the 1st electroconductive layer 13 arrange | positioned on the surface of the base particle 12. FIG. The conductive particles 11 are coated particles in which the surface of the base particle 12 is coated with the first conductive layer 13. The melting point of the first conductive layer 13 is 450 ° C. or less.

  The base particle is a base particle having no conductive layer, or a base particle having a base particle main body and a second conductive layer disposed on the surface of the base particle main body. It is preferable. The base particle may be a base particle having no conductive layer, and is a base particle having a base particle body and a second conductive layer disposed on the surface of the base particle body. There may be.

  Examples of the base particle and the base particle body that do not have the conductive layer include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles. The base material particles not having the conductive layer and the base material particle main body may be inorganic particles or organic-inorganic hybrid particles excluding resin particles and metal particles, or may be metal particles. The substrate particles not having the conductive layer and the substrate particle main body are preferably substrate particles excluding metal particles, respectively, and may be resin particles, inorganic particles excluding metal particles, or organic-inorganic hybrid particles. preferable.

  The base particles not having the conductive layer and the base particle main body are preferably resin particles formed of a resin. When connecting between electrodes using electroconductive particle, after arrange | positioning electroconductive particle between electrodes, electroconductive particle is compressed by crimping | bonding. When the base material particle not having the conductive layer and the base material particle main body are resin particles, the conductive particles are easily deformed during the pressure bonding, and the contact area between the conductive particles and the electrode is increased. For this reason, the conduction | electrical_connection reliability between electrodes becomes still higher.

  Examples of the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; Alkylene terephthalate, polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, Polysulfone, polyphenylene oxide, polyacetal, polyimide, polyamide Bromide, polyether ether ketone, polyether sulfone, divinyl benzene polymer, and divinylbenzene copolymer, and the like. Examples of the divinylbenzene copolymer include divinylbenzene-styrene copolymer and divinylbenzene- (meth) acrylic acid ester copolymer. Since the hardness of the resin particles can be easily controlled within a suitable range, the resin for forming the resin particles is a polymer obtained by polymerizing one or more polymerizable monomers having an ethylenically unsaturated group. It is preferably a coalescence.

  When the resin particles are obtained by polymerizing a monomer having an ethylenically unsaturated group, the monomer having the ethylenically unsaturated group may be a non-crosslinkable monomer or a crosslinkable monomer. And a polymer.

  Examples of the non-crosslinkable monomer include styrene monomers such as styrene and α-methylstyrene; carboxyl group-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride; (Meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl ( Alkyl (meth) acrylates such as meth) acrylate and isobornyl (meth) acrylate; oxygen such as 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate and glycidyl (meth) acrylate (Meth) acrylates; nitrile-containing monomers such as (meth) acrylonitrile; vinyl ethers such as methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether; vinyl acids such as vinyl acetate, vinyl butyrate, vinyl laurate, vinyl stearate Esters; Unsaturated hydrocarbons such as ethylene, propylene, isoprene and butadiene; Halogen-containing monomers such as trifluoromethyl (meth) acrylate, pentafluoroethyl (meth) acrylate, vinyl chloride, vinyl fluoride and chlorostyrene Is mentioned.

  Examples of the crosslinkable monomer include tetramethylolmethane tetra (meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, and dipenta Erythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) Polyfunctional (meth) acrylates such as acrylate, (poly) tetramethylene di (meth) acrylate, 1,4-butanediol di (meth) acrylate; triallyl (iso) cyanurate, tria Rutorimeriteto, divinylbenzene, diallyl phthalate, diallyl acrylamide, diallyl ether, .gamma. (meth) acryloxy propyl trimethoxy silane, trimethoxy silyl styrene, include silane-containing monomers such as vinyltrimethoxysilane.

  The resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include a method of suspension polymerization in the presence of a radical polymerization initiator, and a method of polymerizing by swelling a monomer together with a radical polymerization initiator using non-crosslinked seed particles.

  In the case where the substrate particles are inorganic particles or organic-inorganic hybrid particles excluding metal, examples of the inorganic material for forming the substrate particles include silica and carbon black. Although it does not specifically limit as the particle | grains formed with the said silica, For example, after hydrolyzing the silicon compound which has two or more hydrolysable alkoxysil groups, and forming a crosslinked polymer particle, it calcinates as needed. The particle | grains obtained by performing are mentioned. Examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.

  When the substrate particles are metal particles, examples of the metal for forming the metal particles include silver, copper, nickel, silicon, gold, and titanium. When the base material particles are metal particles, the metal particles are preferably copper particles. However, the substrate particles are preferably not metal particles.

  The conductive particles may have a single conductive layer (first conductive layer). The conductive particles may have a plurality of conductive layers (first and second conductive layers). That is, in the conductive particles, two or more conductive layers may be stacked. The second conductive layer having a melting point higher than that of the first conductive layer may be a plurality of layers.

  The first conductive layer is a low melting point metal layer having a melting point of 450 ° C. or lower. The low melting point metal layer is a layer containing a low melting point metal. The low melting point metal is a metal having a melting point of 450 ° C. or lower. The melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower. The low melting point metal layer preferably contains tin. In 100% by weight of the metal contained in the low melting point metal layer, the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more. . When the content of tin in the low melting point metal layer is not less than the above lower limit, the connection reliability between the low melting point metal layer and the electrode is further enhanced. The tin content is determined using a high frequency inductively coupled plasma optical emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.

  When the low melting point metal layer is present, the low melting point metal layer is melted and joined to the electrodes, and the low melting point metal layer conducts between the electrodes. For example, since the low-melting point metal layer and the electrode are not in point contact but in surface contact, the connection resistance is lowered. In addition, the use of conductive particles having a low-melting point metal layer increases the bonding strength between the low-melting point metal layer and the electrode. As a result, peeling between the low-melting point metal layer and the electrode is less likely to occur, and conduction reliability is improved. Effectively high.

  The low melting point metal which comprises the said low melting metal layer is not specifically limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. Especially, since it is excellent in the wettability with respect to an electrode, it is preferable that the said low melting metal is a tin, a tin-silver alloy, a tin-silver-copper alloy, a tin-bismuth alloy, and a tin-indium alloy. More preferred are a tin-bismuth alloy and a tin-indium alloy.

  The low melting point metal layer (the first conductive layer) is preferably a solder layer. Although the material which comprises the said solder layer is not specifically limited, Based on JISZ3001: welding term, it is preferable that it is a filler material whose liquidus is 450 degrees C or less. As a composition of the said solder layer, the metal composition containing zinc, gold | metal | money, lead, copper, tin, bismuth, indium etc. is mentioned, for example. Among them, a tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic) which is low-melting and lead-free is preferable. That is, the solder layer preferably does not contain lead, and is preferably a solder layer containing tin and indium or a solder layer containing tin and bismuth.

  In order to further increase the bonding strength between the low melting point metal layer and the electrode, the low melting point metal layer is made of nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth. Further, it may contain a metal such as manganese, chromium, molybdenum and palladium. From the viewpoint of further increasing the bonding strength between the low melting point metal layer and the electrode, the low melting point metal preferably contains nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the low melting point metal layer and the electrode, the content of these metals for increasing the bonding strength is 100 wt% of the low melting point metal layer, preferably 0.0001 wt% or more, Preferably it is 1 weight% or less.

  The melting point of the second conductive layer is higher than the melting point of the first conductive layer. The melting point of the second conductive layer is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, still more preferably more than 450 ° C, particularly preferably more than 500 ° C, Most preferably above 600 ° C. Since the first conductive layer has a low melting point, it melts during conductive connection. The second conductive layer is preferably not melted at the time of conductive connection. The conductive particles are preferably used by melting the first conductive layer, and preferably used by melting the first conductive layer and without melting the second conductive layer. Since the melting point of the second conductive layer is higher than the melting point of the first conductive layer, only the first conductive layer is melted without melting the second conductive layer during conductive connection. be able to.

  The absolute value of the difference between the melting point of the first conductive layer and the melting point of the second conductive layer exceeds 0 ° C., preferably 5 ° C. or higher, more preferably 10 ° C. or higher, still more preferably 30 ° C. or higher. Particularly preferably, it is 50 ° C. or higher, and most preferably 100 ° C. or higher.

  The second conductive layer preferably contains a metal. The metal constituting the second conductive layer is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. As for the said metal, only 1 type may be used and 2 or more types may be used together.

  The second conductive layer is preferably a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably a nickel layer or a gold layer, and even more preferably a copper layer. The conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and still more preferably have a copper layer. By using the conductive particles having these preferable conductive layers for the connection between the electrodes, the connection resistance between the electrodes is further reduced. In addition, a low melting point metal layer can be more easily formed on the surface of these preferable conductive layers.

  In the conductive particle material, the average particle size of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, preferably 100 μm or less, more preferably 20 μm or less, still more preferably 15 μm or less, particularly preferably. 10 μm or less. From the viewpoint of further improving the connection reliability of the connection structure when receiving a thermal history, the average particle diameter of the conductive particles is particularly preferably 1 μm or more and 10 μm or less, and is 1 μm or more and 4 μm or less. Most preferably it is.

  The “average particle size” of the conductive particles indicates a number average particle size. The average particle diameter of the conductive particles can be obtained by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.

  The average thickness of the first conductive layer is preferably 0.05 μm or more, more preferably 0.5 μm or more, preferably 10 μm or less, more preferably 5 μm or less. When the thickness of the first conductive layer is not less than the above lower limit and not more than the above upper limit, the first conductive layer is sufficiently wetted and spreads on the electrode at the time of pressure bonding, so that sufficient conductivity can be obtained. The average thickness of the first conductive layer is an average of the thickness of the first conductive layer in the plurality of conductive particles included in the conductive particle material.

  The average thickness of the second conductive layer is preferably 0.005 μm or more, more preferably 0.01 μm or more, preferably 10 μm or less, more preferably 1 μm or less, and still more preferably 0.3 μm or less. When the thickness of the second conductive layer is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes is further reduced. The average thickness of the second conductive layer is the average thickness of the second conductive layer in the plurality of conductive particles contained in the conductive particle material.

(Conductive material)
The conductive material according to the present invention includes the conductive particle material described above and a binder resin. Therefore, the conductive material according to the present invention includes a plurality of conductive particles. The conductive material is preferably an anisotropic conductive material.

  The binder resin is not particularly limited. In general, an insulating resin is used as the binder resin. Examples of the binder resin include vinyl resins, thermoplastic resins, curable resins, thermoplastic block copolymers, and elastomers. The binder resin preferably contains a thermosetting component, and more preferably contains a thermosetting compound and a thermosetting agent. As for the said binder resin, only 1 type may be used and 2 or more types may be used together.

  Examples of the vinyl resin include vinyl acetate resin, acrylic resin, and styrene resin. Examples of the thermoplastic resin include polyolefin resins, ethylene-vinyl acetate copolymers, and polyamide resins. Examples of the curable resin include an epoxy resin, a urethane resin, a polyimide resin, and an unsaturated polyester resin. The curable resin may be a room temperature curable resin, a thermosetting resin, a photocurable resin, or a moisture curable resin. The curable resin may be used in combination with a curing agent. Examples of the thermoplastic block copolymer include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-styrene block copolymer, a hydrogenated product of a styrene-butadiene-styrene block copolymer, and a styrene-isoprene. -Hydrogenated product of a styrene block copolymer. Examples of the elastomer include styrene-butadiene copolymer rubber and acrylonitrile-styrene block copolymer rubber.

  In addition to the conductive particles with insulating particles and the binder resin, the conductive material includes, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, and heat stability. Various additives such as an agent, a light stabilizer, an ultraviolet absorber, a lubricant, an antistatic agent and a flame retardant may be contained.

  The method for dispersing the conductive particles in the binder resin is not particularly limited, and a conventionally known dispersion method can be used. Examples of a method for dispersing the conductive particles in the binder resin include a method in which the conductive particles are added to the binder resin and then kneaded and dispersed with a planetary mixer or the like. The conductive particles are dispersed in water. Alternatively, after uniformly dispersing in an organic solvent using a homogenizer or the like, it is added to the binder resin and kneaded with a planetary mixer or the like, and the binder resin is diluted with water or an organic solvent. Then, the method of adding the said electroconductive particle, kneading with a planetary mixer etc. and disperse | distributing is mentioned.

  The conductive material according to the present invention can be used as a conductive paste and a conductive film. When the conductive material according to the present invention is a conductive film, a film that does not include the conductive particle material may be laminated on the conductive film that includes the conductive particle material. The conductive paste is preferably an anisotropic conductive paste. The conductive film is preferably an anisotropic conductive film.

  In 100% by weight of the conductive material, the content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, still more preferably 50% by weight or more, particularly preferably 70% by weight or more, preferably 99.99. % By weight or less, more preferably 99.9% by weight or less. When the content of the binder resin is not less than the above lower limit and not more than the above upper limit, the conductive particles are more efficiently arranged between the electrodes, and the connection reliability of the connection target member connected by the conductive material is further increased. Become.

  In 100% by weight of the conductive material, the content of the conductive particles (that is, the content of the conductive particle material) is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, and still more preferably 1% by weight. % Or more, preferably 40% by weight or less, more preferably 30% by weight or less, still more preferably 20% by weight or less, and particularly preferably 15% by weight or less. In 100% by weight of the conductive material, the content of the conductive particles is particularly preferably 1% by weight or more and 20% by weight or less. A conductive particle can be easily arrange | positioned between the upper and lower electrodes which should be connected as content of the said electroconductive particle is more than the said minimum and below the said upper limit. Furthermore, it becomes difficult to electrically connect adjacent electrodes that should not be connected via a plurality of conductive particles. That is, a short circuit between adjacent electrodes can be further prevented.

(Connection structure)
A connection structure can be obtained by connecting the connection target member using a conductive material (an anisotropic conductive material or the like) including the conductive particle material and the binder resin described above.

  The connection structure includes a first connection target member, a second connection target member, and a connection portion connecting the first connection target member and the second connection target member, and the connection portion. Is preferably a connection structure formed of a conductive material containing the conductive particle material and the binder resin described above.

  FIG. 3 is a front sectional view schematically showing a connection structure using the conductive particles 1 shown in FIG.

  The connection structure 51 shown in FIG. 3 is a connection that connects the first connection target member 52, the second connection target member 53, and the first connection target member 52 and the second connection target member 53. Part 54. The connecting portion 54 is formed of a conductive material including a conductive particle material containing a plurality of conductive particles 1 and a binder resin. Instead of the conductive particles 1, other conductive particles such as the conductive particles 11 may be used.

  The first connection target member 52 has a plurality of first electrodes 52a on the surface (upper surface). The second connection target member 53 has a plurality of second electrodes 53a on the surface (lower surface). The first electrode 52 a and the second electrode 53 a are electrically connected by one or a plurality of conductive particles 1. Therefore, the first and second connection target members 52 and 53 are electrically connected by the conductive particles 1. The first and second electrodes 52a and 53a each have a length direction and a width direction, and FIG. 3 shows a cross section in the length direction of the first and second electrodes 52a and 53a. .

  The connection structure 51 shown in FIG. 3 can be obtained, for example, through the steps shown in FIGS. 4A to 4C as follows.

  First, a first connection target member 52 having a plurality of first electrodes 52a on the surface is prepared. Next, as shown in FIG. 4A, the conductive material (an anisotropic conductive material or the like) is disposed on the surface of the first connection target member 52, and the surface of the first connection target member 52 is Then, a conductive material layer 54A (an anisotropic conductive material layer or the like) is formed. At this time, a conductive material is disposed in the first region R1, which is a partial region on the first electrode 52a, to form a conductive material layer 54A. The region where the conductive material layer 54A is initially disposed is the first region R1.

  Next, a second connection target member 53 having a plurality of second electrodes 53a on the surface is prepared. As shown in FIG. 4B, the second connection target member 53 is laminated on the surface of the conductive material layer 54A opposite to the first connection target member 52 side. The second connection target member 53 is laminated so that the first electrode 52a and the second electrode 53a face each other. When the second connection target member 53 is stacked, the conductive material layer 54A is wet-spread in the direction indicated by the arrows Y1 and Y2 in the second region R2 around the first region R1. That is, the conductive material layer 54A is caused to flow to the second region R2 around the first region. At this time, relatively large conductive particles 1 are likely to be sandwiched between the first electrode 52a and the second electrode 53a in the first region R1 or in the vicinity of the first region R1.

  Thereafter, as shown in FIG. 4C, the conductive material layer 54A is heated and cured in the laminate in which the first connection target member 52, the conductive material layer 54A, and the second connection target member 53 are stacked. Let When the conductive material layer 54A is heated, the first conductive layer 3 is melted. It is preferable to apply pressure when heating the conductive material layer 54A. The first conductive layer 3 of the relatively large conductive particles 1 in which the first electrode 52a and the second electrode 53a are sandwiched is melted so that the distance between the first and second electrodes 52a and 53a is melted. Becomes narrower. For example, the distance between the first and second electrodes 52 a and 53 a is reduced by the thickness of the first conductive layer 3. Further, as the distance between the first and second electrodes 52a and 53a becomes narrower, the conductive material layer 54A moves in the direction indicated by the arrows Y1 and Y2. That is, the conductive material layer 54A flows to the second region R2 around the first region R1. The larger the particle size of the conductive particles 1, the easier it is for the conductive particles 1 to be sandwiched between the first and second electrodes 52a and 53a in the first region R1 or in the vicinity of the first region R1. As the particle diameter of the conductive particles 1 is smaller, the conductive particles 1 are more likely to be sandwiched between the first and second electrodes 52a and 53a in the second region R2.

  In addition, the more uniform the particle diameter of the base particles 2 is, the more easily the plurality of base particles 2 are in contact with the first and second electrodes 52a and 53a, and the connection resistance between the electrodes is further reduced. The spacing between the electrodes is uniform. On the other hand, the more non-uniform the particle size of the base particles, the more base particles that do not contact the first and second electrodes, the higher the connection resistance between the electrodes, and the non-uniform spacing between the electrodes. become.

  Further, by using the conductive particles having the second conductive layer 7, the second conductive layer 7 in the plurality of base material particles 2 can easily come into contact with the first and second electrodes 52a and 53a. On the other hand, when the melting point of the first conductive layer is high and the first conductive layer does not melt, the distance between the first and second electrodes is regulated by relatively large conductive particles, and is relatively small. The conductive particles do not contact the electrode, or the portion where the first and second electrodes are connected by relatively large conductive particles and the first and second electrodes are connected by relatively small conductive particles The distance between the electrodes differs between the formed portions and the connection target member may be bent.

  As described above, the connection portion 54 is formed by heating and curing the conductive material layer 54A using a conductive material. The connection part 54 connects the first connection target member 52 and the second connection target member 53. Further, the first electrode 52 a and the second electrode 53 a are electrically connected by the conductive particles 1. In this way, the connection structure 51 can be obtained.

  As shown in FIG. 3, in the connection structure 51, the first conductive layer portion melted after the first conductive layer 3 in the conductive particles 1 is melted by heating and pressurizing the laminate. Is sufficiently in contact with the first and second electrodes 52a and 53a. That is, by using the conductive particles 1 including the first conductive layer 3 having a low melting point, the first conductive layer 3 is melted and the surfaces of the first and second electrodes 52a and 53a are wetted and spread. The contact area between the first conductive layer 3 and the first and second electrodes 52a and 53a can be increased. When the conductive particles 1 are used, the second conductive layer 7 can be brought into contact with the first electrode 52a and the second electrode 53a. When the conductivity of the second conductive layer 7 is higher than the conductivity of the first conductive layer 3, the connection resistance can be further reduced. In the case of using conductive particles including the second conductive layer, in the connection structure, it is preferable that the second conductive layer is in contact with the first electrode and the second electrode.

  The heating temperature for curing the conductive material layer 54A by heating is preferably 140 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and further preferably 200 ° C. or lower. Note that before the conductive material layer 54A is fully cured by heating, the conductive material layer 54A may be cured so that the conductive material layer 54A is not completely cured. For example, the conductive material layer 54A may be in a B stage state.

  The heating temperature for curing (main curing) the conductive material layer 54A by heating is preferably a temperature at which the first conductive layer 3 melts. The heating temperature at which the conductive material layer 54A is cured by heating is preferably a temperature at which the base particle, the base particle body, and the second conductive layer do not melt.

  In the connection structure 51 shown in FIG. 3, after a conductive material is disposed in the first region R1, which is a partial region on the first electrode 52a, to form a conductive material layer 54A, The connection material 54 is formed by wetting and spreading the conductive material layer 54A in the surrounding second region R2. The amount of the first conductive layer 3 in the conductive particles 1 located in the first region R1 is larger than the amount of the first conductive layer 3 in the conductive particles 1 located in the second region R2. In other words, in the connection structure 51, the amount of the first conductive layer 3 in the conductive particles 1 in the region in which the conductive material layer is initially disposed is in the region where the amount of the first conductive layer 3 is wet from the region in which the conductive material layer is initially disposed. More than the amount of the first conductive layer 3 in the conductive particles 1.

  Further, after a conductive material layer 54A is formed by disposing a conductive material containing a plurality of conductive particles 1 in the first region R1, which is a partial region on the first electrode 52a (for example, FIG. 5 ( The state shown in a)), the conductive material layer 54A is wet spread in the second region R2 around the first region R1 to form the connection portion 54, so that the unit area per unit area in the first region R1 It is possible to make the number of the conductive particles 1 present equal to the number of the conductive particles 1 per unit area in the second region R2 (for example, the state shown in FIG. 5B).

  On the other hand, when conventional conductive particles are used, a large number of conductive particles are arranged in the first region as shown in FIG. 6A, or as shown in FIG. Many conductive particles are arranged in the region 2. 6 (a) and 6 (b) are plan views after obtaining a connection structure using conventional conductive particles in place of the conductive particles 1, corresponding to FIG. 5 (b). It is.

The average number A of conductive particles existing in a region having a size of 0.1 mm ² in the first region R1 and the conductive particles existing in a region having a size of 0.2 mm ² in the second region R2. The ratio of A to the average number B (average number A / average number B) is preferably 0.25 or more, more preferably 0.3 or more, preferably 0.65 or less, more preferably 0.6 or less.

  The first connection target member preferably has a plurality of first electrodes on the surface. The second connection target member preferably has a plurality of second electrodes on the surface. The plurality of first electrodes and the plurality of second electrodes are preferably electrically connected by the conductive particles.

  The first electrode preferably has a length direction and a width direction. The second electrode preferably has a length direction and a width direction. The aspect ratio of the first electrode and the second electrode is preferably 5 or more, more preferably 10 or more, preferably 100 or less, more preferably 50 or less. It is preferable that the first electrode and the second electrode are electrically connected by the conductive particles contained in the conductive particle material so that their lengthwise directions are aligned. The aspect ratio is “aspect ratio = dimension in the length direction / dimension in the width direction”.

  The said 1st, 2nd connection object member is not specifically limited. Specific examples of the first and second connection target members include electronic components such as semiconductor chips, capacitors, and diodes, and electronic components such as circuit boards such as printed boards, flexible printed boards, and glass boards. It is done. The conductive material is preferably a conductive material used for connecting electronic components. The conductive material is preferably a liquid and is a conductive material that is applied to the upper surface of the connection target member in a liquid state. The connection target member is preferably an electronic component.

  Examples of the electrode provided on the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, and a tungsten electrode. When the connection object member is a flexible printed board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, or a copper electrode. When the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, or a tungsten electrode. In addition, when the said electrode is an aluminum electrode, the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated | stacked on the surface of the metal oxide layer may be sufficient. Examples of the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, and Ga.

  Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples. The present invention is not limited only to the following examples.

Example 1
Divinylbenzene resin particles (“Micropearl SP-210” manufactured by Sekisui Chemical Co., Ltd., average particle size 10 μm, softening point 330 ° C.) are electroless nickel-plated, and the base nickel plating is 0.1 μm thick on the surface of the resin particles. A layer was formed. Next, the resin particles on which the base nickel plating layer was formed were subjected to electrolytic copper plating to form a copper layer having an average thickness of 2 μm to obtain base particles. The substrate particles have resin particles and a copper layer. The average particle diameter of the obtained base particles was 14 μm, and the CV value was 5%.

  Next, using an electroplating solution containing tin and bismuth, electroplating, and taking out the conductive particles obtained by dividing into an electroplating initial stage, an intermediate stage, and a late stage multiple times, A solder layer having an average thickness of 2 μm was formed. Thus, a copper layer is formed on the surface of the resin particles, and a solder layer (tin: bismuth = 43 wt%: 57 wt%, melting point: 139 ° C.) is formed on the surface of the copper layer. A conductive particle material containing conductive particles (resin core solder-coated particles) was prepared. The obtained conductive particles had an average particle size of 20 μm and a CV value of 12%.

  The obtained conductive particles have resin particles as the base particle body, have a copper layer as the second conductive layer, and have a solder layer as the first conductive layer.

(Examples 2 to 4 and Comparative Example 1)
Example 1 except that the average particle size and CV value of the base particles (having the resin particles and the copper layer) and the average particle size and CV value of the conductive particles were set as shown in Table 1 below. Similarly, a conductive particle material was obtained.

  The CV value of the substrate particles was adjusted by changing the CV value of the resin particles. The CV value of the conductive particles was adjusted by selecting conductive particles having a predetermined size.

(Comparative Example 2)
The average particle diameter and CV value of the base particles (including resin particles and copper layer), and the CV value of the conductive particles were set as shown in Table 1 below, and the solder layer in the conductive particles was nickel A conductive particle material was obtained in the same manner as in Example 1 except that the layer (melting point: 1455 ° C.) was changed.

(Example 5)
As the base particles obtained in Example 1, base particles having an average particle diameter of 14 μm and a CV value of 5% were prepared.

  Next, electroplating using an electroplating solution containing tin and bismuth, conductive particles having an average solder layer thickness of 2 μm, conductive particles having a solder layer thickness of 3 μm, and solder Conductive particles having a layer thickness of 4 μm were prepared and mixed. Thus, a copper layer is formed on the surface of the resin particles, and a solder layer (tin: bismuth = 43 wt%: 57 wt%, melting point: 139 ° C.) is formed on the surface of the copper layer. A conductive particle material containing conductive particles (resin core solder-coated particles) was prepared. The obtained conductive particles had an average particle size of 20 μm and a CV value of 12%.

(Example 6)
As the base particles obtained in Example 1, base particles having an average particle diameter of 14 μm and a CV value of 5% were prepared.

  In the theta composer, solder particles having a particle diameter of 1 μm are added in order to form a solder layer at the initial stage of manufacturing, and solder particles having a particle diameter of 3 μm are added in the latter stage of manufacturing to form a solder layer. By adding, the solder layer was formed so as to have a non-uniform thickness, and a solder layer having an average thickness of 2 μm was formed. Thus, a copper layer is formed on the surface of the resin particles, and a solder layer (tin: bismuth = 43 wt%: 57 wt%, melting point: 139 ° C.) is formed on the surface of the copper layer. A conductive particle material containing conductive particles (resin core solder-coated particles) was prepared. The obtained conductive particles had an average particle size of 21 μm and a CV value of 15%.

(Example 7)
The surface of divinylbenzene copolymer resin particles (“Micropearl SP-203” manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 3.0 μm was coated with an inorganic shell (thickness 250 nm) using a condensation reaction by sol-gel reaction. Core-shell type organic-inorganic hybrid particles (base material particles) were prepared. The obtained organic / inorganic hybrid particles had an average particle size of 14 μm and a CV value of 5%.

  A copper layer is formed on the surface of the resin particle in the same manner as in Example 1 except that the resin particle is changed to the organic-inorganic hybrid particle, and a solder layer (tin: bismuth) is formed on the surface of the copper layer. = 43 wt%: 57 wt%, melting point: 139 ° C.) conductive particle material including conductive particles (resin core solder-coated particles) was produced. The obtained conductive particles had an average particle size of 20 μm and a CV value of 12%.

(Evaluation)
(1) Preparation of anisotropic conductive material 30 parts by weight of an epoxy compound ("YL980" manufactured by Mitsubishi Chemical Corporation) and 10 parts by weight of an imidazole compound ("2P-4MZ" manufactured by Shikoku Kasei Kogyo Co., Ltd.) as a thermosetting agent, 15 parts by weight of epoxy acrylate which is a photocurable compound (“EBECRYL 3702” manufactured by Daicel-Cytec) and 0.3 parts by weight of acylphosphine oxide compound which is a photopolymerization initiator (“DAROCUR TPO” manufactured by Ciba Japan) And 1 part by weight of a silane coupling agent as an adhesion-imparting agent (“KBE-403” manufactured by Shin-Etsu Chemical Co., Ltd.), 20 parts by weight of silica with an average particle diameter of 0.25 μm as filler, and 2 parts of glutaric acid as flux. The content in 100% by weight of the anisotropic conductive paste from which the obtained conductive particles can be obtained is 30% by weight. After the addition, the anisotropic conductive paste was obtained by stirring for 5 minutes at 2000 rpm using a planetary stirrer.

(2) Production of connection structure Glass epoxy substrate having a plurality of first electrodes (L / S of 100 μm / 100 μm, aspect ratio of 20 for one electrode, thickness of 20 μm, Cu electrode plated with gold) on the surface ( A first connection target member) was prepared.

  In addition, a flexible printed circuit board (second connection target member) having a plurality of second electrodes (L / S of 100 μm / 100 μm, aspect ratio of 20 for one electrode, thickness of 20 μm, Cu electrode plated with gold) on the surface Prepared.

  While the dispenser is moved linearly in the direction perpendicular to the length direction of the first electrode at the central portion in the length direction of the first electrode (the length direction of one electrode), the glass epoxy On the substrate, the obtained anisotropic conductive paste was applied to form an anisotropic conductive material layer. That is, the anisotropic conductive material layer was formed on the plurality of first electrodes by moving the dispenser from one edge of the electrode pattern to the other edge.

Next, the anisotropic conductive material layer was irradiated with ultraviolet light of 420 nm so that the light irradiation energy was 70 mJ / cm ² using an ultraviolet irradiation lamp.

  Next, the flexible printed circuit board was laminated on the surface opposite to the glass epoxy substrate side of the anisotropic conductive material layer with the first electrode and the second electrode facing each other. After that, while adjusting the temperature of the head so that the temperature of the anisotropic conductive material layer becomes 185 ° C., a pressure heating head is placed on the surface of the glass substrate and a pressure of 1 MPa is applied to apply the anisotropic conductive material layer. Was cured at 185 ° C. to obtain a connection structure.

(3) Evaluation of the state of the conductive connection The region where the anisotropic conductive material layer is initially arranged is defined as a first region which is a partial region on the first electrode, and the surroundings of the first region are different. A region where the isotropic conductive material layer is wetted and spread is defined as a second region.

When the flexible printed circuit board of the connection structure is peeled off and observed from above the glass epoxy substrate, the average number A of conductive particles existing in a region having a size of 0.1 mm ² in the first region, and the first The average number B of conductive particles existing in a region having a size of 0.2 mm ² in the region ² was measured. The state of the conductive connection was determined according to the following criteria.

[Criteria for determining the state of conductive connection]
○: Ratio of average number A to average number B is 0.3 or more and 0.6 or less Δ: Ratio of average number A to average number B is 0.2 or more, less than 0.3 or more than 0.6, 0 .65 or less x: Ratio of average number A to average number B is less than 0.2 or exceeds 0.65

  The results are shown in Table 1 below.

  In the evaluation of the state of the conductive connection (3) in Examples and Comparative Examples, the evaluation results were shown when the anisotropic conductive material layer was photocured and then thermally cured. Even when the material was cured in one step, the evaluation result of the state of the conductive connection showed the same tendency.

DESCRIPTION OF SYMBOLS 1 ... Conductive particle 2 ... Base material particle 3 ... 1st conductive layer 6 ... Base particle body 7 ... 2nd conductive layer 11 ... Conductive particle 12 ... Base particle 13 ... 1st conductive layer 51 ... Connection Structure 52 ... first connection target member 52a ... first electrode 53 ... second connection target member 53a ... second electrode 54 ... connection portion 54A ... conductive material layer R1 ... first region R2 ... second region

Claims (10)

A conductive particle material comprising a plurality of conductive particles comprising base particles and a first conductive layer disposed on the surface of the base particles,
The melting point of the first conductive layer is 450 ° C. or less;
A conductive particle material, wherein a CV value of a particle diameter of the conductive particles is larger than a CV value of a particle diameter of the base particles. The base particle has a base particle body and a second conductive layer disposed on the surface of the base particle body,
The conductive particle material according to claim 1, wherein a melting point of the second conductive layer is higher than a melting point of the first conductive layer.   The conductive particle material according to claim 2, wherein the melting point of the second conductive layer exceeds 450 ° C.   The absolute value of the difference between the CV value of the particle diameter of the conductive particles and the CV value of the particle diameter of the substrate particles is 1% or more and 10% or less, according to any one of claims 1 to 3. The electroconductive particle material as described.   The conductive particle material according to any one of claims 1 to 4, which is dispersed in a binder resin and used as a conductive material.   The electroconductive material containing the electroconductive particle material of any one of Claims 1-5, and binder resin. A first connection object member having a first electrode on its surface;
A second connection target member having a second electrode on its surface;
A connection portion connecting the first connection target member and the second connection target member;
The connection part is formed of a conductive material containing the conductive particle material according to any one of claims 1 to 5 and a binder resin,
A connection structure in which the first electrode and the second electrode are electrically connected by the conductive particles contained in the conductive particle material. A conductive material layer is formed by disposing the conductive material in a first region that is a partial region on the first electrode, and the conductive material layer is formed in a second region around the first region. The connection part is formed by spreading
The amount of the first conductive layer in the conductive particles located in the first region is greater than the amount of the first conductive layer in the conductive particles located in the second region. 8. The connection structure according to 7. A conductive material layer comprising: a conductive material comprising the conductive particle material according to claim 1 and a binder resin disposed on a first connection target member having a first electrode on a surface thereof. Forming a step;
Laminating a second connection target member having a second electrode on the surface of the conductive material layer opposite to the first connection target member side;
Heating and curing the conductive material layer to form a connection portion, and connecting the first connection target member and the second connection target member by the connection portion,
A method for manufacturing a connection structure, wherein a connection structure is obtained in which the first electrode and the second electrode are electrically connected by the conductive particles contained in the conductive particle material. Forming the conductive material layer in a first region, which is a partial region on the first electrode, and spreading the conductive material layer in a second region around the first region; Forming the connecting portion;
The connection structure in which the amount of the first conductive layer in the conductive particles located in the first region is larger than the amount of the first conductive layer in the conductive particles located in the second region. The manufacturing method of the connection structure of Claim 9 which obtains.

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