JP2013219134A - Insulation substrate manufacturing method - Google Patents

Insulation substrate manufacturing method Download PDF

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JP2013219134A
JP2013219134A JP2012087263A JP2012087263A JP2013219134A JP 2013219134 A JP2013219134 A JP 2013219134A JP 2012087263 A JP2012087263 A JP 2012087263A JP 2012087263 A JP2012087263 A JP 2012087263A JP 2013219134 A JP2013219134 A JP 2013219134A
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layer
insulating substrate
brazing
alloy
joined
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JP6008544B2 (en
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Atsushi Otaki
篤史 大滝
Shigeru Oyama
茂 大山
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Showa Denko Kk
昭和電工株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PROBLEM TO BE SOLVED: To provide an insulation substrate manufacturing method capable of preventing cracks or exfoliation with a good solder bonding property.SOLUTION: A method for manufacturing an insulation substrate 1 includes a laminate material manufacturing step S1, a brazing joint step S4, and an annealing step S5. In the laminate material manufacturing step S1, an Ni-layer in which a semiconductor element 21 is jointed to the surface thereof, a Ti-layer 5 and a first Al-layer 4 are jointed and integrated in a lamination manner, so as to manufacture a laminate material 2. In the brazing joint step S4, a first Al-layer 6, a second Al-layer 7 and a ceramic layer 8 of the laminate material 2 are collectively jointed by brazing while they are pressurized in a lamination direction. Thereby, a jointed body 15 integrally comprising the laminate material 2, the second Al-layer 7 and the ceramic layer 8 is obtained. In the annealing step S5, the jointed body 15 is annealed while pressurization in the lamination direction is released.

Description

  The present invention relates to a method for manufacturing an insulating substrate used for heat dissipation of a semiconductor element, a method for manufacturing a semiconductor module, an insulating substrate, and a semiconductor module.

  In the present specification, the term “plate” is used to include “foil”.

  A semiconductor module such as a power semiconductor module includes an insulating substrate including a heat radiating member (for example, a heat sink and a cooler) for releasing heat generated from the semiconductor element by the operation of the semiconductor element. Furthermore, this insulating substrate is a conductor in the heat, but functions electrically as an insulator. Specifically, the heat dissipation member, a ceramic layer as an electric insulating layer, and one side thereof And a metal layer including a wiring layer (circuit layer) formed thereon (see, for example, Patent Documents 1 to 4). Then, the semiconductor element is joined to the surface of the metal layer of the insulating substrate by soldering.

  In recent years, an Al layer formed of Al or an Al alloy has been used as the wiring layer. The reason is that Al is excellent in electrical characteristics and thermal characteristics, and can reduce the manufacturing cost of the insulating substrate.

JP 2004-328012 A JP 2004-235503 A JP 2006-303346 A JP 2009-147123 A

  However, when a Ni layer such as a Ni plating layer is formed on the Al layer of the insulating substrate, an alloy layer having a low strength is formed at the bonding interface between the Al layer and the Ni layer. Therefore, the heat applied when the semiconductor element is joined to the surface of the Ni layer by soldering causes large irregularities on the surface of the Ni layer, and as a result, the semiconductor element cannot be mounted on the insulating substrate substantially. there were.

  Further, when the Ni layer is formed on the Al layer, there are the following difficulties. That is, in general, in a semiconductor module, as the semiconductor element operates, the temperature of the semiconductor element rises from room temperature to 150 to 300 ° C. Therefore, every time the semiconductor element operates, a temperature change from room temperature to the operating temperature of the semiconductor element occurs in the insulating substrate. Due to this temperature change and its repetition (that is, a thermal cycle), a thermal stress is generated due to a difference in thermal expansion between the Al layer and the Ni layer, and this thermal stress causes a crack at the joint interface between the Al layer and the Ni layer. Etc. may occur.

  In addition, the insulating substrate also accumulates thermal stress caused by the difference in thermal expansion between each layer constituting the insulating substrate, which is generated during the manufacturing process, and this thermal stress causes cracking of the insulating substrate during the thermal cycle. Defects such as (particularly cracking of the ceramic layer) and peeling may occur.

  The present invention has been made in view of the above-described technical background, and an object of the present invention is to provide a method for manufacturing an insulating substrate that has good solderability and can prevent cracking and peeling, and the insulating substrate. A semiconductor module manufacturing method, an insulating substrate, and a semiconductor module are provided.

  The present invention provides the following means.

[1] A Ni layer formed of Ni or a Ni alloy to which a semiconductor element is bonded to the surface, a Ti layer formed of Ti or a Ti alloy disposed on the back side of the Ni layer, and the Ti layer A laminated material production process for producing a laminated material in which a first Al layer formed of Al or an Al alloy arranged on the side opposite to the Ni layer arranged side is joined and integrated in a laminated manner;
The first Al layer of the laminated material, the second Al layer formed of Al or an Al alloy disposed on the opposite side of the Ti layer of the first Al layer, and the second Al layer. A ceramic layer disposed on the side opposite to the first Al layer arrangement side of the Al layer is collectively bonded by brazing in a state where the ceramic layer is pressed in the laminating direction, whereby the laminate material and the second layer are joined together. A brazing joint step for obtaining a joined body having the Al layer and the ceramic layer;
An insulating substrate manufacturing method comprising: annealing the bonded body in a state where pressure in the stacking direction is released.

  [2] In the laminated material manufacturing step, the Ni layer and the Ti layer are joined by diffusion bonding, whereby Ni of the Ni layer and the Ti layer are bonded to a joint interface between the Ni layer and the Ti layer. 2. The method for manufacturing an insulating substrate according to item 1, further comprising a first diffusion bonding step of forming a Ni—Ti superelastic alloy layer alloyed with Ti.

  [3] The insulation according to item 2, wherein the laminated material manufacturing step includes a second diffusion bonding step of bonding the Ti layer and the first Al layer by diffusion bonding after the first diffusion bonding step. A method for manufacturing a substrate.

[4] In the brazing and joining step,
The first Al layer, the second Al layer, the ceramic layer, and a metal stress relaxation layer disposed on the opposite side of the ceramic layer from the second Al layer disposed side; The insulation according to any one of the preceding items 1 to 3, wherein the heat dissipation member disposed on the side opposite to the ceramic layer arrangement side of the metal stress relaxation layer is collectively joined by brazing in a state of being pressed in the laminating direction. A method for manufacturing a substrate.

  [5] A method for manufacturing a semiconductor module, comprising bonding a semiconductor element to a surface of a Ni layer of an insulating substrate manufactured by the method for manufacturing an insulating substrate according to any one of items 1 to 4 by soldering.

  [6] An insulating substrate manufactured by the method for manufacturing an insulating substrate according to any one of items 1 to 4.

  [7] A semiconductor module manufactured by the method for manufacturing a semiconductor module according to [5].

[8] A Ni layer formed of Ni or Ni alloy to which a semiconductor element is bonded to the surface, a Ti layer formed of Ti or Ti alloy disposed on the back side of the Ni layer, and the Ti layer The first Al layer formed of Al or Al alloy arranged on the side opposite to the Ni layer arrangement side is joined and integrated in a laminated form,
A first Al layer; a second Al layer formed of Al or an Al alloy disposed on the opposite side of the first Al layer to the Ti layer disposition side; and A ceramic layer arranged on the side opposite to the first Al layer arrangement side, and a joined body integrally joined in a laminated form by brazing,
An insulating substrate, wherein the joined body is annealed.

  [9] A semiconductor module, wherein a semiconductor element is joined to the surface of the Ni layer of the insulating substrate according to item 8 by soldering.

  The present invention has the following effects.

  According to the method for manufacturing an insulating substrate of [1], an insulating substrate having a surface layer formed of a Ni layer is manufactured. Therefore, this insulating substrate has good solderability, and therefore, the semiconductor elements can be well joined by soldering.

  Furthermore, since the Ti layer is disposed between the Ni layer and the first Al layer in the laminated material manufacturing process, the following effects can be obtained. That is, if the Ni layer and the first Al layer are directly bonded without disposing the Ti layer between the Ni layer and the first Al layer, the bonding interface between the Ni layer and the first Al layer. As a result, an alloy layer having a low strength is formed, and as a result, the alloy layer is likely to be cracked or peeled off due to a thermal stress (thermal strain) generated with a cooling cycle or the like. On the other hand, in the method for manufacturing an insulating substrate of [1], the Ti layer is disposed between the Ni layer and the first Al layer, so that such an alloy layer having a low strength is not formed. Thereby, the generation | occurrence | production of the crack and peeling of an insulated substrate can be prevented, and also generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface of Ni layer can also be prevented.

  Furthermore, in the brazing joining step, a joined body having a laminated material (Ni layer, Ti layer, first Al layer), a second Al layer, and a ceramic layer is obtained, so the first Al layer and the second Al layer are obtained. Thus, it is possible to obtain an insulating substrate that can use the thick Al layer, which is the total of the Al layers, as the wiring layer. Further, since this thick Al layer is divided into a first Al layer and a second Al layer before the brazing and joining process, the thickness of the first Al layer is reduced in the laminated material manufacturing process. The first Al layer can be set to a thickness that can be satisfactorily bonded to the Ti layer. By doing so, the Ti layer and the first Al layer can be reliably bonded to each other reliably. Furthermore, the material of the first Al layer and the second Al layer can be selected according to the function, action, purpose, etc., respectively.

  Furthermore, in the brazing joining step, the first Al layer, the second Al layer, and the ceramic layer of the laminated material are joined together by brazing, so that the joining can be performed efficiently, and thus the insulating substrate. The manufacturing cost can be reduced. Furthermore, since these layers are bonded in a state where they are pressed in the stacking direction, a higher bonding strength can be obtained than in the case of bonding in a state where no pressure is applied in the stacking direction.

  Furthermore, in the annealing process, the bonded body thus obtained is annealed in a state where the pressurization in the stacking direction is released, so that the thermal stress (thermal strain) of the bonded body accumulated in the brazing bonding process can be removed. it can. As a result, it is possible to reliably prevent cracking of the insulating substrate (particularly cracking of the ceramic layer) and peeling, and it is also possible to reliably prevent deformation (unevenness) of the surface of the Ni layer. Therefore, it is possible to manufacture an insulating substrate having a high heat resistance.

  According to [2], the thermal stress (thermal strain) can be further relaxed by the superelastic alloy layer by forming the Ni—Ti superelastic alloy layer at the joint interface between the Ni layer and the Ti layer. it can. Therefore, it is possible to more reliably prevent the insulating substrate from being cracked or peeled off, and to further reliably prevent the deformation (unevenness) of the surface of the Ni layer.

  According to the preceding item [3], the laminated material manufacturing process includes the second diffusion bonding step of bonding the Ti layer and the first Al layer by diffusion bonding after the first diffusion bonding step. The effect is produced.

  That is, if the Ni layer and the Ti layer are joined after joining the Ti layer and the first Al layer, the Ti layer and the first Al layer are heated by the heat at the time of joining the Ni layer and the Ti layer. There is a risk that an alloy layer having a low strength (eg, Al—Ti alloy layer) may be formed at the joint interface with the. On the other hand, by joining the Ti layer and the first Al layer after joining the Ni layer and the Ti layer, such a strength is weak at the joint interface between the Ti layer and the first Al layer. It is possible to reliably prevent the alloy layer from being formed.

  Further, if the Ti layer and the first Al layer are joined by brazing instead of diffusion joining, Ti of the Ti layer and the first Al layer are formed at the joining interface between the Ti layer and the first Al layer. A TiAlSi alloy layer in which the Al and the brazing material layer Si are alloyed is formed. This alloy layer has low strength. For this reason, cracks and peeling easily occur in this alloy layer. Therefore, in order to eliminate this difficulty, the Ti layer and the first Al layer are joined not by brazing but by diffusion joining. Thereby, generation | occurrence | production of a crack and peeling of an insulated substrate can be prevented further reliably, and also generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface of Ni layer can be prevented further reliably.

  According to the preceding item [4], an insulating substrate having a laminated material (Ni layer, Ti layer, first Al layer), a second Al layer, a ceramic layer, a metal stress relaxation layer, and a heat dissipation member can be easily obtained. Can be manufactured.

  According to the semiconductor module manufacturing method of the preceding item [5], the semiconductor element can be satisfactorily bonded to the surface of the insulating substrate by soldering.

  According to the insulating substrate of the previous item [6], the same effect as any one of the previous items [1] to [4] is obtained.

  According to the semiconductor module of the preceding item [7], the same effect as the effect of the preceding item [5] is obtained.

  According to the insulating substrate of item [8], the same effect as any of items [1] to [4] is obtained.

  According to the semiconductor module of [9], the same effect as that of [5] is obtained.

FIG. 1 is a schematic front view of a semiconductor module according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of an insulating substrate used in the semiconductor module. FIG. 3 is a schematic cross-sectional view showing an example of the manufacturing process of the insulating substrate. FIG. 4 is a schematic cross-sectional view showing a first diffusion bonding step in which the Ni layer and the Ti layer are bonded by clad rolling as diffusion bonding. FIG. 5 is a schematic cross-sectional view showing a first diffusion bonding step in which a Ni layer and a Ti layer are bonded by a discharge plasma sintering method as diffusion bonding. FIG. 6 is a schematic front view showing a brazing joining process.

  Next, an embodiment of the present invention will be described below with reference to the drawings. In the following description, the top and bottom of each drawing is referred to as the top and bottom.

  In FIG. 1, reference numeral 20 denotes a semiconductor module (including a power semiconductor module) according to an embodiment of the present invention. The semiconductor module 20 includes a semiconductor element 21 and an insulating substrate 1 manufactured by the method for manufacturing an insulating substrate according to an embodiment of the present invention.

  The semiconductor module 20 is an IGBT module, a MOSFET module, a thyristor module, a diode module, or the like.

  The semiconductor element 21 is mounted on the insulating substrate 1 of the present embodiment. The semiconductor element 21 is an IGBT chip, a MOSFET chip, a thyristor chip, a diode chip, or the like.

  As shown in FIG. 2, the insulating substrate 1 includes a Ni layer 3, a Ti layer 5, a first Al layer 6, a second Al layer 7, a ceramic layer 8, a metal stress relaxation layer 9, The heat dissipating member 10 is provided, and these are joined and integrated in this order in a stacked manner.

  The heat radiating member 10 is for releasing the heat generated from the semiconductor element 21 along with the operation of the semiconductor element 21 to lower the temperature of the semiconductor element 21. Specifically, the heat radiating member 10 includes an air-cooled or water-cooled heat sink, Such as a cooler. Furthermore, the heat radiating member 10 is made of metal, and more specifically, for example, made of Al or an Al alloy. In this embodiment, the heat radiating member 10 is an air-cooled Al or Al alloy sheet sink having a plurality of heat radiating fins. The insulating substrate 1 functions as a conductor thermally so that heat generated from the semiconductor element 21 can be satisfactorily transmitted to the heat radiating member 10, and further functions as an insulator electrically. is there.

  In the insulating substrate 1, the layers are arranged horizontally and are formed in a substantially square shape in plan view.

  The Ni layer 3 is made of Ni or Ni alloy, and more specifically, is made of Ni or Ni alloy plate. Further, the Ni layer 3 is one in which the semiconductor element 21 is joined to the surface (upper surface) 3a by soldering, that is, the surface layer of the insulating substrate 1 is formed.

  The Ti layer 5 is formed of Ti or a Ti alloy. More specifically, the Ti layer 5 is formed of a Ti or Ti alloy plate. The Ti layer 5 is formed by alloying Ni, which is a constituent element of the Ni layer 3, and Ti, which is a constituent element of the Ti layer 5, so that the Ni-Ti superelastic alloy layer 4 is formed with the Ni layer 3 and the Ti layer 5. It has a role of generating at the bonding interface. And this Ti layer 5 is arrange | positioned at the back surface side (namely, lower surface side of Ni layer 3) of Ni layer 3, and Ni layer 3 and Ti layer 5 are carried out by diffusion bonding (clad rolling, a discharge plasma sintering method, etc.). It is joined in a laminated form. Further, by this bonding, a Ni-Ti superelastic alloy layer 4 in which Ni of the Ni layer 3 and Ti of the Ti layer 5 are alloyed is thinly formed at the bonding interface between the Ni layer 3 and the Ti layer 5. . The Ni—Ti superelastic alloy layer 4 is a layer including a Ni—Ti superelastic alloy phase in detail. In the present embodiment, the Ni—Ti superelastic alloy layer 4 is a layer including, for example, a NiTi superelastic alloy phase, that is, a NiTi superelastic alloy layer.

  The superelastic alloy of the superelastic alloy layer 4 desirably has superelastic characteristics over a temperature range from room temperature to the operating temperature of the semiconductor element 21 (eg, 300 ° C.), and particularly desirably room temperature. To a brazing temperature (e.g., 600 ° C.) in a brazing and joining step S4 to be described later.

  Here, the thicknesses of the Ni layer 3, the Ti layer 5, and the superelastic alloy layer 4 are not limited. However, the thermal conductivity of Ni is 90.7 W / m · K, the thermal conductivity of Ti is 21.9 W / m · K, and the thermal conductivity of the Ni-Ti superelastic alloy is 20.0 W / m · K. In addition, these thermal conductivities are remarkably low as compared with the thermal conductivity of Al 236 W / m · K. Therefore, it is desirable that the Ni layer 3, the Ti layer 5, and the superelastic alloy layer 4 are all as thin as possible because the thermal conductivity of the insulating substrate 1 can be improved. Therefore, it is desirable that the upper limit of the thickness of the Ni layer 3 is 200 μm, the upper limit of the thickness of the Ti layer 5 is 200 μm, and the upper limit of the thickness of the superelastic alloy layer 4 is 50 μm. On the other hand, if these layers 3, 5, 4 are too thin, the desired properties of each layer may not be exhibited. Therefore, it is desirable that the lower limit of the thickness of the Ni layer 3 is 5 μm, the lower limit of the thickness of the Ti layer 5 is 5 μm, and the lower limit of the thickness of the superelastic alloy layer 4 is 0.05 μm.

  The first Al layer 6 is made of Al or an Al alloy. More specifically, the first Al layer 6 is made of an Al or Al alloy plate. And this 1st Al layer 6 is arrange | positioned on the opposite side (namely, lower surface side of Ti layer 5) of Ni layer 3 arrangement | positioning of Ti layer 5, and Ti layer 5 and 1st Al layer 6 are spread | diffused. They are joined in a laminated form by joining (clad rolling, spark plasma sintering, etc.). The thickness of the first Al layer 6 is particularly preferably set in the range of 30 to 100 μm so that the first Al layer 6 can be favorably bonded to the Ti layer 5 by diffusion bonding. Furthermore, the softened or melted brazing filler metal layer 12a for joining the first Al layer 6 and the second Al layer 7 by the brazing joining heat in the brazing joining step S4 described later contacts the Ti layer 5. Then, a TiAlSi alloy layer having a low strength is formed at the contact portion, and the alloy layer is easily cracked or peeled off. Therefore, in order to eliminate this difficulty, it is particularly desirable that the thickness of the first Al layer 6 is more than the thickness of the brazing material layer 12a.

  As described above, the Ni layer 3, the Ti layer 5, and the first Al layer 6 are joined and integrated in a laminated form. In the present embodiment, a combination of these layers 3, 5, and 6 is referred to as “laminated material 2”.

  The second Al layer 7 is formed of Al or an Al alloy. More specifically, the second Al layer 7 is formed of an Al or Al alloy plate. And this 2nd Al layer 7 is arrange | positioned on the opposite side to Ti layer 5 arrangement | positioning side of 1st Al layer 6 (namely, lower surface side of 1st Al layer 6), 1st Al layer 6 and The second Al layer 7 is joined in a laminated form by brazing. The thickness of the second Al layer 7 is not limited, but in order to make the second Al layer 7 function as a wiring layer of the insulating substrate 1 reliably, it is set in the range of 100 to 1000 μm. Particularly desirable.

  At the bonding interface between the first Al layer 6 and the second Al layer 7, a brazing filler metal layer 12a in which both layers 6 and 7 are bonded is interposed. The brazing material layer 12a is preferably an Al brazing material (eg, brazing material of Al—Si based alloy), and the brazing material layer 12a has a thickness of, for example, 10 to 100 μm. In these drawings, the brazing filler metal layer 12a is illustrated by dot hatching so that it can be easily distinguished from other layers. Other brazing filler metal layers 12b to 12d to be described later are also illustrated by dot hatching for the same reason.

The ceramic layer 8 functions as an electrical insulating layer, and is one selected from the group consisting of AlN (aluminum nitride), Al 2 O 3 , Si 3 N 4 , Y 2 O 3 , CaO, BN, and BeO. Or it is formed with 2 or more types of ceramics, and when it explains in detail, it is formed from the ceramic board. And this ceramic layer 8 is arrange | positioned on the opposite side (namely, lower surface side of the 2nd Al layer 7) to the 1st Al layer 6 arrangement | positioning side of the 2nd Al layer 7, The ceramic layer 8 is joined in a laminated form by brazing. The thickness of the ceramic layer 8 is not limited and is, for example, 200 to 1000 μm. The length and width of the ceramic layer 8 are such that the Ni layer 3, the Ti layer 5, the first Al layer 6, the second Al layer 7, and the metal stress relaxation in order to ensure that the ceramic layer 8 functions as an electrical insulating layer. It is set slightly larger than the length and width of the layer 9. Incidentally, the melting point or decomposition point of the ceramic forming the ceramic layer 8 is based on the melting points of the Ni layer 3, the Ti layer 5, the first Al layer 6, the second Al layer 7, the metal stress relaxation layer 9, and the heat dissipation member 10. Is also expensive.

  At the bonding interface between the second Al layer 7 and the ceramic layer 8, a brazing filler metal layer 12b in which both layers 7 and 8 are bonded is interposed. The brazing material layer 12b is preferably a layer of Al brazing material (eg, brazing material of Al—Si based alloy), and the thickness of the brazing material layer 12b is, for example, 10 to 100 μm.

  The metal stress relaxation layer 9 is for relaxing thermal stress (thermal strain) generated in the insulating substrate 1 due to a cooling cycle or the like, and is made of metal, and in the present embodiment, a plurality of penetrations penetrating in the thickness direction. It is formed from a punching metal plate made of Al or Al alloy having holes 9a. And this metal stress relaxation layer 9 is arrange | positioned on the opposite side (namely, lower surface side of the ceramic layer 8) of the ceramic layer 8, and the ceramic layer 8 and the metal stress relaxation layer 9 are arrange | positioned. They are joined in a laminated form by brazing. The thickness of the metal stress relaxation layer 9 is not limited and is, for example, 600 to 2000 μm.

  At the bonding interface between the ceramic layer 8 and the metal stress relaxation layer 9, a brazing material layer 12c in which both layers 8 and 9 are bonded is interposed. The brazing material layer 12c is preferably an Al brazing material (eg, brazing material of Al—Si based alloy), and the brazing material layer 12c has a thickness of, for example, 10 to 100 μm.

  As described above, the heat radiating member 10 is made of metal, and in detail, for example, is made of Al or an Al alloy. And this heat radiating member 10 is arrange | positioned on the opposite side (namely, the lower surface side of the metal stress relaxation layer 9) of the ceramic stress layer 9 of the metal stress relaxation layer 9, and the metal stress relaxation layer 9 and the heat radiating member 10 will braze. They are joined in a laminated form.

  At the bonding interface between the metal stress relaxation layer 9 and the heat dissipating member 10, a brazing filler metal layer 12d in which both are bonded is interposed. The brazing material layer 12d is preferably a layer of Al brazing material (eg, brazing material of Al—Si based alloy), and the brazing material layer 12d has a thickness of 10 to 100 μm, for example.

  Next, the manufacturing method of the insulating substrate 1 of this embodiment is demonstrated below with reference to FIGS.

  As shown in FIG. 3, the method for manufacturing the insulating substrate 1 of the present embodiment includes a laminated material manufacturing step S1, a brazing joint step S4, and an annealing step S5. Brazing joining process S4 is performed after laminated material manufacturing process S1. The annealing step S5 is performed after the brazing and joining step S4.

  The laminated material manufacturing step S1 is a step of manufacturing the laminated material 2 in which the Ni layer 3, the Ti layer 5, and the first Al layer 6 are joined and integrated in a laminated shape. S2 and a second diffusion bonding step S3 are provided. The second diffusion bonding step S3 is performed after the first diffusion bonding step S2.

  In the first diffusion bonding step S2, the Ni layer 3 and the Ti layer 5 are overlapped with each other and bonded in a laminated form by diffusion bonding, whereby a Ni—Ti superstructure is formed at the bonding interface between the Ni layer 3 and the Ti layer 5. The elastic alloy layer 4 is formed. In other words, the Ni layer 3 and the Ti layer 5 are bonded by diffusion bonding so that the Ni—Ti superelastic alloy layer 4 is formed at the bonding interface between the Ni layer 3 and the Ti layer 5. For diffusion bonding, clad rolling, spark plasma sintering, or the like is used. The superelastic alloy layer 4 formed by diffusion bonding has a gradient material structure in which the Ni—Ti superelastic alloy phase is included and the composition ratio of Ni and Ti gradually changes in the thickness direction. Therefore, the superelastic alloy layer 4 can play a role of reliably relaxing and absorbing thermal stress.

  Note that, even if the Ni layer 3 and the Ti layer 5 are joined by brazing instead of diffusion joining, the superelastic alloy layer 4 is not formed at the joining interface between the both layers 3 and 5.

  Here, the spark plasma sintering (SPS) method is generally applied to sinter powder or to join members, and in this embodiment, the members ( More specifically, it is applied to join metal plates). This discharge plasma sintering method is also called “SPS bonding method”, “Pulsed Current Hot Pressing (PCHP)” or the like.

  When the Ni layer 3 and the Ti layer 5 are joined by clad rolling as diffusion bonding, in order to reliably form the superelastic alloy layer 4 between the layers 3 and 5, warm or hot cladding is used. It is desirable to join both layers 3 and 5 by rolling. That is, as shown in FIG. 4, using a clad rolling device 30 having a pair of upper and lower rolling rolls 31, 31 arranged in parallel to each other, the Ni layer 3 and the Ti layer 5 superimposed on each other are both rolled rolls 31. The Ni layer 3 and the Ti layer 5 are joined (clad) by sandwiching the Ni layer 3 and the Ti layer 5 with both rolling rolls 31 and 31. At the time of joining, Ni in the Ni layer 3 and Ti in the Ti layer 5 diffuse at the joining interface between the layers 3 and 5 due to heat at the time of joining the Ni layer 3 and the Ti layer 5 and diffused Ni And Ti are alloyed to form a Ni—Ti superelastic alloy layer 4 at the joint interface between the layers 3 and 5. As a result, the Ni—Ti-based superelastic alloy layer 4 is interposed at the bonding interface between the layers 3 and 5. The joining conditions are as long as the Ni layer 3 and the Ti layer 5 can be joined by clad rolling so that the Ni—Ti superelastic alloy layer 4 is formed at the joining interface between the layers 3 and 5. Good, not particularly limited. For example, the bonding conditions are a clad temperature of 630 to 750 ° C. and a clad rate of 40 to 60%.

  When the Ni layer 3 and the Ti layer 5 are joined by the discharge plasma sintering method as diffusion joining, first, as shown in FIG. 5, first, in the cylindrical die 41 provided in the discharge plasma sintering apparatus 40. The Ni layer 3 and the Ti layer 5 are stacked on top of each other. Thereby, the periphery of both layers 3 and 5 is surrounded by the die 41. The die 41 has conductivity, and is made of, for example, graphite. Next, both layers 3 and 5 are sandwiched between a pair of upper and lower punches 42 and 42 in the stacking direction. Each punch 42 has conductivity, and is made of, for example, graphite. An electrode 43 is electrically connected to the base of each punch 42. And, for example, in the vacuum atmosphere of 1-10 Pa or in the inert gas atmosphere such as nitrogen, argon, etc., while pressing both layers 3, 5 in the stacking direction with both punches 42, 42, both punches 42, Both layers 3 and 5 are heated by applying a pulse current between both punches 42 and 42 while energization between 42 is ensured, and thereby the Ni layer 3 and the Ti layer 5 are joined. As a result, the Ni—Ti superelastic alloy layer 4 is formed at the bonding interface between the Ni layer 3 and the Ti layer 5. In this joining, it is desirable to set joining conditions (for example, heating temperature, holding time of heating temperature, heating rate, pressurizing force) so that a Ni—Ti superelastic alloy layer 4 having a predetermined thickness is formed. . Specific examples of the bonding conditions include a heating temperature of 600 to 700 ° C., a holding time of the heating temperature of 5 to 20 min, a rate of temperature increase from room temperature to the heating temperature of 5 to 50 ° C./min, and both layers 3 and 5 The pressure applied to is 10 to 20 MPa.

  In the second diffusion bonding step S3, after the first diffusion bonding step S2, the Ti layer 5 and the first Al layer 6 are overlapped with each other and bonded in a laminated manner by diffusion bonding. As the diffusion bonding, the above-described clad rolling, a discharge plasma sintering method, or the like is used.

  When the Ti layer 5 and the first Al layer 6 are joined by clad rolling as diffusion joining, the joining is performed using the clad rolling apparatus 30 shown in FIG. This is performed by cold or warm clad rolling in which a temperature lower than the clad temperature applied to the bonding is applied as the clad temperature. The joining condition is not particularly limited as long as the Ti layer 5 and the first Al layer 6 can be joined by clad rolling. For example, the bonding conditions are a cladding temperature of 350 to 430 ° C. and a cladding ratio of 30 to 60%.

  When the Ti layer 5 and the first Al layer 6 are bonded by the discharge plasma sintering method as diffusion bonding, the bonding is performed using the above-described discharge plasma sintering apparatus 40 shown in FIG. The bonding conditions may be any conditions as long as both layers 5 and 6 can be bonded. Specifically, the heating temperature is 500 to 560 ° C., the holding time of the heating temperature is 5 to 20 min, and the temperature is changed from room temperature to the heating temperature. The heating rate is 5 to 50 ° C./min, and the pressure applied to both layers 5 and 6 is 10 to 20 MPa.

  As described above, by sequentially performing the first diffusion bonding step S2 and the second diffusion bonding step S3, a laminated material in which the Ni layer 3, the Ti layer 5, and the first Al layer 6 are bonded and integrated in a laminated shape. 2 is manufactured.

  Next, a brazing and joining step S4 is performed. In this brazing joining step S4, the first Al layer 6, the second Al layer 7, the ceramic layer 8, the metal stress relaxation layer 9, and the heat radiating member 10 of the laminated material 2 are collectively brought together by brazing. The process of joining is described in detail as follows.

  As shown in FIG. 6, the first Al layer 6, the second Al layer 7, the ceramic layer 8, and the ceramic layer 8 on the mount 55 provided in the pressure device 50 for brazing and bonding, The metal stress relaxation layer 9 and the heat radiating member 10 are overlapped and arranged in a laminated form. At this time, between the first Al layer 6 and the second Al layer 7, between the second Al layer 7 and the ceramic layer 8, between the ceramic layer 8 and the metal stress relaxation layer 9, Between the metal stress relaxation layer 9 and the heat radiating member 10, Al type brazing material plates are interposed and disposed as brazing material layers 12a to 12d, respectively. The thickness of each brazing material plate is, for example, 10 to 100 μm. Subsequently, these are pressurized collectively in the stacking direction by the pressing device 50. Then, while maintaining the pressure, they are joined together in a vacuum by brazing such as in-furnace brazing. Thereby, the joined body 15 which integrally has the laminated material 2, the 2nd Al layer 7, the ceramic layer 8, the metal stress relaxation layer 9, and the heat radiating member 10 is obtained.

The pressurizing device 50 includes a plurality of support columns 51 erected on a pedestal 55 and a lifting plate 52 erected on the support columns 51. The height position of the lifting plate 52 with respect to the pedestal 55 is adjustable and can be fixed. Further, a push plate 54 is attached to the lift plate 52 via a plurality of push springs 53. When pressing is performed by the pressing device 50, the pressing plate 54 is placed on the Ni layer 3, and the pressing plate 54 always presses the Ni layer 3 downward by the elastic restoring force of the pressing spring 53. The height position of the lift plate 52 is fixed so that Thereby, the laminated material 2, the second Al layer 7, the ceramic layer 8, the metal stress relaxation layer 9, and the heat radiating member 10 are collectively pressed in the laminating direction. The magnitude of the applied pressure at this time is not limited, but is particularly preferably 290 to 1000 Pa. Although other bonding conditions are not limited, the brazing temperature is 580 to 610 ° C., the brazing temperature holding time is 5 to 30 min, and the degree of vacuum is 1 × 10 −3 to 1 × 10 −5 Pa. It is particularly desirable to be. By performing brazing and joining under such joining conditions, it is possible to reliably obtain the joined body 15 having a good joined state.

Here, the linear thermal expansion coefficient of Ni (13.4 × 10 −6 / K), the linear thermal expansion coefficient of Ti (8.4 × 10 −6 / K), and the linear thermal expansion coefficient of ceramic are Al wires. It is much smaller than the thermal expansion coefficient (23.2 × 10 −6 / K). Therefore, when the temperature of the joined body 15 that has risen to the brazing temperature in the brazing joining step S4 is lowered to room temperature, and then the pressure in the stacking direction is released, the joined body 15 has a difference in thermal expansion between the layers. Thermal stress (thermal strain) is maintained that maintains the state in which the first Al layer 6 and the second Al layer 7 are extended due to the above. More specifically, tensile stress as thermal stress is accumulated in the first Al layer 6 and second Al layer 7, and compressive stress as thermal stress is accumulated in the Ni layer 3, Ti layer 5 and ceramic layer 8. Is done. If the bonded body 15 is used as the insulating substrate 1 with the thermal stress accumulated in this manner, the insulating substrate 1 is likely to be cracked or peeled off during use. Therefore, in order to remove this thermal stress, an annealing step S5 is performed after the brazing joining step S4.

  In the annealing step S5, the bonded body 15 is annealed using a furnace (not shown) in a state where the pressure in the stacking direction (that is, the thickness direction of the bonded body 15) is released. The annealing conditions are variously set according to the materials of the respective layers 3, 5, 6, 7, 8, 9 and the heat radiating member 10. In particular, the annealing temperature is 275 to 580 ° C., and the annealing temperature. It is desirable that the holding time of 3 min or more is that heat stress can be surely removed. The upper limit of the annealing temperature holding time is particularly preferably 120 min. The annealing atmosphere may be either air or vacuum, and it is particularly preferable that the atmosphere is air because annealing can be performed easily.

  The insulating substrate 1 of this embodiment is obtained through the above steps.

  When manufacturing the semiconductor module 20 using this insulating substrate 1, the semiconductor element 21 is joined to the surface 3a of the Ni layer 3 of the insulating substrate 1 by soldering according to a conventional method. Thereby, the semiconductor module 20 is obtained.

  The manufacturing method of the insulating substrate 1 of the present embodiment has the following advantages.

  According to the method for manufacturing the insulating substrate 1 of the present embodiment, the insulating substrate 1 having the surface layer formed of the Ni layer 3 is manufactured. Therefore, this insulating substrate 1 has good solderability, and thus the semiconductor element 21 can be well bonded by soldering.

  Furthermore, since the Ti layer 5 is disposed between the Ni layer 3 and the first Al layer 6 in the laminated material manufacturing step S1, the following effects are produced. That is, if the Ni layer 3 and the first Al layer 6 are directly joined without disposing the Ti layer 5 between the Ni layer 3 and the first Al layer 6, the Ni layer 3 and the first Al layer 6 An alloy layer having a low strength is formed at the joint interface with the Al layer 6, and as a result, the alloy layer is likely to be cracked or peeled off due to thermal stress (thermal strain) generated with a cooling cycle or the like. On the other hand, in the manufacturing method of the insulating substrate 1 of the present embodiment, since the Ti layer 5 is disposed between the Ni layer 3 and the first Al layer 6, such a weak alloy layer is Not formed. Thereby, generation | occurrence | production of the crack and peeling of the insulated substrate 1 can be prevented, and also generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface 3a of the Ni layer 3 can also be prevented.

  Furthermore, in the brazing joining step S4, since the joined body 15 having the laminated material 2 (Ni layer 3, Ti layer 5, first Al layer 6), the second Al layer 7 and the ceramic layer 8 is obtained, The insulating substrate 1 can be obtained in which the thick Al layer obtained by adding the first Al layer 6 and the second Al layer 7 can be used as a wiring layer. Furthermore, since this thick Al layer is divided into the first Al layer 6 and the second Al layer 7 before the brazing and joining step S4, the first Al layer in the laminated material manufacturing step S1. The thickness of 6 can be set to a thickness at which the first Al layer 6 can be satisfactorily bonded to the Ti layer 5. For example, when the Ti layer 5 and the first Al layer 6 are bonded by clad rolling in the laminated material manufacturing step S1 (specifically, the second diffusion bonding step S3), both layers 5, Since the range of the clad rate that can favorably bond 6 is determined, the thick first Al layer may not be favorably bonded to the Ti layer 5. Therefore, first, a thin first Al layer 6 that can be satisfactorily bonded to the Ti layer 5 by clad rolling is prepared and bonded to the Ti layer 5, and then the first Al layer 6 and the thick second layer are bonded. The thickness of the Al layer is increased by bonding to the Al layer 7. As a result, an Al layer having a thickness that can reliably function as a wiring layer can be formed. Furthermore, the materials of the first Al layer 6 and the second Al layer 7 can be selected according to the function, action, purpose, etc., respectively.

  Further, in the brazing joining step S4, the first Al layer 6, the second Al layer 7 and the ceramic layer 8 are joined together by brazing, so that the joining can be performed efficiently, and thus the insulating substrate 1 The manufacturing cost can be reduced. Furthermore, since these layers are bonded in a state where they are pressed in the stacking direction, a higher bonding strength can be obtained than in the case of bonding in a state where no pressure is applied in the stacking direction.

  Further, in the annealing step S5, the bonded body 15 obtained in this way is annealed in a state in which the pressurization in the stacking direction is released, so that the thermal stress (thermal strain) of the bonded body 15 accumulated in the brazing bonding step S4 is obtained. This can be removed. As a result, it is possible to reliably prevent the insulating substrate 1 from cracking (particularly, the ceramic layer 8) and peeling, and to reliably prevent the deformation (unevenness) of the surface 3a of the Ni layer 3. Therefore, it is possible to manufacture the insulating substrate 1 having high heat resistance.

  Furthermore, since the laminated material manufacturing step S1 includes the first diffusion bonding step S2, the Ni—Ti superelastic alloy layer 4 capable of relaxing the thermal stress is formed at the bonding interface between the Ni layer 3 and the Ti layer 5. be able to. Therefore, it is possible to further reliably prevent the insulating substrate 1 from being cracked or peeled off, and further reliably prevent the deformation (unevenness) of the surface 3a of the Ni layer 3 from occurring.

  Furthermore, since the laminated material manufacturing step S1 includes the second diffusion bonding step S3 for bonding the Ti layer 5 and the first Al layer 6 after the first diffusion bonding step S2, the following effects are obtained. Play.

  That is, if the Ni layer 3 and the Ti layer 5 are joined after joining the Ti layer 5 and the first Al layer 6, the Ti layer is heated by the heat at the time of joining the Ni layer 3 and the Ti layer 5. There is a possibility that an alloy layer having a low strength (eg, Al—Ti alloy layer) may be formed at the bonding interface between the first Al layer 6 and the first Al layer 6. On the other hand, by joining the Ni layer 3 and the Ti layer 5 and then joining the Ti layer 5 and the first Al layer 6, the Ti layer 5 and the first Al layer 6 are bonded to each other. The formation of such a weak alloy layer can be reliably prevented.

  Furthermore, if the Ti layer 5 and the first Al layer 6 are joined by brazing instead of diffusion joining, the Ti layer 5 Ti and the Ti layer 5 are bonded to the joining interface between the Ti layer 5 and the first Al layer 6. There is a possibility that a TiAlSi alloy layer in which Al of the first Al layer 6 and Si of the brazing material layer are alloyed is formed. This alloy layer has low strength. For this reason, cracks and peeling easily occur in this alloy layer. Therefore, in order to eliminate this difficulty, the Ti layer 5 and the first Al layer 6 are joined by diffusion bonding. Thereby, generation | occurrence | production of the crack and peeling of the insulated substrate 1 can be prevented further reliably, and also the generation | occurrence | production of the deformation | transformation (unevenness | corrugation) of the surface 3a of the Ni layer 3 can be prevented further reliably.

  Further, in the present embodiment, the brazing and joining step S4 includes the first Al layer 6, the second Al layer 7, the ceramic layer 8, the metal stress relaxation layer 9, and the heat dissipation member 10 of the laminated material 2. Since they are joined together, it is possible to easily manufacture the insulating substrate 1 having these integrally.

  Although one embodiment of the present invention has been described above, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the present invention.

  For example, in the above embodiment, the heat radiating member 10 is a heat sink. However, in the present invention, the heat radiating member 10 may be a cooler, for example.

  Next, specific examples of the present invention will be described below. However, the present invention is not limited to this embodiment.

<Example>
In this example, the insulating substrate 1 having the configuration shown in FIG. 2 was manufactured according to the manufacturing method of the insulating substrate of the above embodiment. The specific manufacturing method is as follows.

  As the Ni layer 3, the Ti layer 5, the first Al layer 6, the second Al layer 7, the ceramic layer 8, the metal stress relaxation layer 9, and the heat radiating member 10, the following plane-view plates were prepared.

Ni layer 3: Pure Ni plate 25 mm long x 25 mm wide x 30 μm thick Ti layer 5: Pure Ti plate 25 mm long x 25 mm wide x 20 μm thick First Al layer 6: 25 mm long Al alloy plate 25 mm wide × 80 μm thick Second Al layer 7: 25 mm long × 25 mm wide × 600 μm high purity Al plate Ceramic layer 8: 29 mm long × 29 mm wide × 0.6 mm thick AlN plate: Metal stress relaxation layer 9: punched metal plate made of high-purity Al having a length of 25 mm × width of 25 mm × thickness of 1.6 mm. Heat radiation member 10: Al alloy plate of length 50 mm × width 50 mm × thickness 5 mm.

  The purity of the pure Ni plate forming the Ni layer 3 is JIS (Japanese Industrial Standard). The purity of the pure Ti plate forming the Ti layer 5 is JIS1 type. The material of the Al alloy plate forming the first Al layer 6 is the aluminum alloy symbol A1100 defined by JIS. The purity of the high-purity Al plate forming the second Al layer 7 is 4N (that is, 99.99% by mass). The purity of the high-purity Al punching metal plate forming the metal stress relaxation layer 9 is 4N (that is, 99.99% by mass). The material of the Al alloy plate forming the heat radiating member 10 is an aluminum alloy symbol A3003 defined by JIS.

  In the first diffusion bonding step S2 of the laminated material manufacturing step S1, the Ni layer 3 and the Ti layer 5 are bonded by warm or hot clad rolling, so that the bonding interface between the Ni layer 3 and the Ti layer 5 is bonded. A NiTi superelastic alloy layer (thickness: about 1 μm) was formed as the Ni—Ti superelastic alloy layer 4. Next, in the second diffusion bonding step S3 of the laminated material manufacturing step S1, the Ti layer 5 and the first Al layer 6 were bonded by cold or warm clad rolling. Thereby, the laminated material 2 in which the Ni layer 3, the Ti layer 5, and the first Al layer 6 were joined and integrated in a laminated shape was manufactured.

Subsequently, brazing joining process S4 was performed as follows. As shown in FIG. 6, the first Al layer 6, the second Al layer 7, the ceramic layer 8, the metal stress relaxation layer 9, and the heat radiating member 10 of the laminated material 2 are laminated in a laminated form. . At this time, between the first Al layer 6 and the second Al layer 7 and between the second Al layer 7 and the ceramic layer 8, Al brazing filler metal layers 12a and 12b are respectively provided. A plate (length 25 mm × width 25 mm × thickness 20 μm) is disposed between the ceramic layer 8 and the metal stress relaxation layer 9, and between the metal stress relaxation layer 9 and the heat dissipation member 10, respectively. Al-based brazing material plates (length 25 mm × width 25 mm × thickness 50 μm) were disposed as the brazing material layers 12 c and 12 d. The material of the brazing material plate is Al-10% by mass Si. Then, these were joined together in a laminated form by brazing in a furnace in a state of being pressurized in the laminating direction by the pressurizing device 50. Thereby, the joined body 15 was obtained. The brazing joining conditions in this case are: pressure in the stacking direction: 490 Pa (5 gf / cm 2 ), brazing temperature: 600 ° C., brazing temperature holding time: 20 min, vacuum degree: 4 × 10 −4 Pa . And when this brazing joining was complete | finished, the pressurization of the lamination direction was cancelled | released.

  Next, in the annealing step S5, the bonded body 15 was annealed in the air using an annealing furnace. As a result, a desired insulating substrate 1 was obtained. The annealing conditions at this time are as follows: annealing temperature: 400 ° C., annealing temperature holding time: 10 min.

  Next, a cooling cycle test at −40 to 125 ° C. was repeated 1000 times on the obtained insulating substrate 1. As a result, cracking and peeling of the insulating substrate 1 did not occur, and deformation of the surface 3a of the Ni layer 3 of the insulating substrate 1 did not occur. Therefore, it has been confirmed that the insulating substrate 1 has high cooling durability.

<Comparative example>
In this comparative example, the insulating substrate was manufactured without performing the annealing step S5 in the above example. Other steps were performed in the same manner as in the above example.

  A cooling cycle test at −40 to 125 ° C. was repeated 1000 times for the insulating substrate obtained in this comparative example. As a result, the insulating substrate was cracked.

  The present invention is applicable to a method for manufacturing an insulating substrate for a semiconductor module on which a semiconductor element is mounted, a method for manufacturing a semiconductor module, an insulating substrate, and a semiconductor module.

1: Insulating substrate 2: Laminated material 3: Ni layer 4: Ni—Ti superelastic alloy layer 5: Ti layer 6: First Al layer 7: Second Al layer 8: Ceramic layer 9: Metal stress relaxation layer 10: Heat radiating members 12a to 12d: Brazing material layer 15: Bonded body 20: Semiconductor module 21: Semiconductor element 30: Clad rolling device 40: Spark plasma sintering device

Claims (9)

  1. Ni layer formed of Ni or Ni alloy to which a semiconductor element is bonded to the surface, Ti layer formed of Ti or Ti alloy disposed on the back side of the Ni layer, and the Ni layer arrangement of the Ti layer A first Al layer formed of Al or an Al alloy disposed on the side opposite to the side, and a laminate manufacturing process for manufacturing a laminate in which the layers are joined and integrated in a laminate,
    The first Al layer of the laminated material, the second Al layer formed of Al or an Al alloy disposed on the opposite side of the Ti layer of the first Al layer, and the second Al layer. A ceramic layer disposed on the side opposite to the first Al layer arrangement side of the Al layer is collectively bonded by brazing in a state where the ceramic layer is pressed in the laminating direction, whereby the laminate material and the second layer are joined together. A brazing joint step for obtaining a joined body having the Al layer and the ceramic layer;
    An insulating substrate manufacturing method comprising: annealing the bonded body in a state where pressure in the stacking direction is released.
  2.   In the laminated material manufacturing step, the Ni layer and the Ti layer are bonded by diffusion bonding, whereby Ni of the Ni layer and Ti of the Ti layer are bonded to the bonding interface between the Ni layer and the Ti layer. The method for manufacturing an insulating substrate according to claim 1, further comprising a first diffusion bonding step of forming an alloyed Ni-Ti superelastic alloy layer.
  3.   3. The insulating substrate according to claim 2, wherein the laminated material manufacturing step includes a second diffusion bonding step of bonding the Ti layer and the first Al layer by diffusion bonding after the first diffusion bonding step. Production method.
  4. In the brazing joint process,
    The first Al layer, the second Al layer, the ceramic layer, and a metal stress relaxation layer disposed on the opposite side of the ceramic layer from the second Al layer disposed side; The heat dissipation member disposed on the side opposite to the ceramic layer placement side of the metal stress relaxation layer is collectively joined by brazing in a state of being pressed in the stacking direction. Insulating substrate manufacturing method.
  5.   A method for manufacturing a semiconductor module, comprising: bonding a semiconductor element to a surface of a Ni layer of an insulating substrate manufactured by the method for manufacturing an insulating substrate according to claim 1 by soldering.
  6.   An insulating substrate manufactured by the method for manufacturing an insulating substrate according to claim 1.
  7.   A semiconductor module manufactured by the method for manufacturing a semiconductor module according to claim 5.
  8. Ni layer formed of Ni or Ni alloy to which a semiconductor element is bonded to the surface, Ti layer formed of Ti or Ti alloy disposed on the back side of the Ni layer, and the Ni layer arrangement of the Ti layer The first Al layer formed of Al or Al alloy disposed on the side opposite to the side is joined and integrated in a laminated manner,
    A first Al layer; a second Al layer formed of Al or an Al alloy disposed on the opposite side of the first Al layer to the Ti layer disposition side; and A ceramic layer arranged on the side opposite to the first Al layer arrangement side, and a joined body integrally joined in a laminated form by brazing,
    An insulating substrate, wherein the joined body is annealed.
  9.   9. A semiconductor module, wherein a semiconductor element is joined to the surface of the Ni layer of the insulating substrate according to claim 8 by soldering.
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KR20170016952A (en) * 2014-07-10 2017-02-14 콘티넨탈 오토모티브 게엠베하 Cooling device, method for producing a cooling device and power circuit

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JP2013235936A (en) * 2012-05-08 2013-11-21 Showa Denko Kk Manufacturing method of cooler
KR20170016952A (en) * 2014-07-10 2017-02-14 콘티넨탈 오토모티브 게엠베하 Cooling device, method for producing a cooling device and power circuit

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