JP2013149865A - プラズマ処理装置 - Google Patents
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- 238000012545 processing Methods 0.000 title claims abstract description 96
- 238000009792 diffusion process Methods 0.000 claims abstract description 34
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000005452 bending Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 167
- 238000005530 etching Methods 0.000 description 24
- 150000002500 ions Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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Abstract
【解決手段】上部電極42と下部電極との間に高周波電力を印加して被処理体をプラズマ処理するプラズマ処理装置であって、絶縁部材60を介して上部電極42の上方に設けられた接地部材61と、上部電極42に直流電圧を印加する直流電源と、を有し、上部電極42の内部には、当該上部電極42の下面に設けられたガス供給口53に連通するガス拡散室54、55が設けられ、絶縁部材60の内部には、ガス拡散室54、55に連通するガス流通路62が形成されている。ガス流通路62には、平面視において当該ガス流通路62の一の端部から他の端部が視認できないように、当該ガス流通路内を流れるガスを少なくとも少なくとも水平成分を有する方向に流す屈曲部63が設けられている。
【選択図】図1
Description
2 マイクロ波供給部
10 ウェハチャック
11 処理容器
12 接地線
13 サセプタ
14 絶縁板
15 支持台
20 補正リング
21 円筒部材
22 伝熱ガス管
30 第1の高周波電源
31 第1の整合器
40 第2の高周波電源
41 第2の整合器
42 上部電極
50 遮蔽部材
51 電極板
52 電極支持板
53 ガス供給口
54、55 ガス拡散室
56 ガス孔
60 絶縁部材
61 接地部材
62 ガス流通路
70 ガス導入口
71 ガス供給管
72 処理ガス供給源
73 流量調整機構
80 ローパスフィルタ
81 直流電源
90 排気口
91 排気管
92 排気装置
93 ライナ
100 制御部
110 整流部材
120 抵抗部
W ウェハ
Claims (7)
- 処理容器内に設けられた上部電極と下部電極との間に高周波電力を印加して処理ガスをプラズマ化し、当該プラズマにより被処理体をプラズマ処理するプラズマ処理装置であって、
絶縁部材を介して前記上部電極の上方に設けられた接地部材と、
前記上部電極に負の直流電圧を印加する直流電源と、を有し、
前記上部電極の内部には、上部電極の下面に設けられたガス供給口に連通するガス拡散室が設けられ、
前記絶縁部材の内部には、前記ガス拡散室に連通するガス流通路が形成され、
前記ガス流通路には、平面視において当該ガス流通路の一の端部から他の端部が視認できないように、当該ガス流通路内を流れるガスを少なくとも水平成分を有する方向に流す屈曲部が設けられていることを特徴とする、プラズマ処理装置。 - 前記ガス流通路の屈曲部は、当該ガス流通路の一の端部から他の端部に向かって螺旋状に形成されていることを特徴とする、請求項1に記載のプラズマ処理装置。
- 前記ガス流通路の屈曲部は、処理ガスが前記ガス流通路内を直進するのを妨げる整流部材を、当該ガス流通路の内部に設けることにより形成されていることを特徴とする、請求項1に記載のプラズマ処理装置。
- 前記ガス流通路の内部において前記整流部材を移動させる駆動機構を有することを特徴とする、請求項3に記載のプラズマ処理装置。
- 前記ガス供給口と前記ガス拡散室の間には、当該ガス供給口とガス拡散室との間の管路抵抗を増加させる抵抗部が設けられていることを特徴とする、請求項1〜4のいずれかに記載のプラズマ処理装置。
- 前記上部電極は、被処理体と対向する電極板と、当該電極板の上面に設けられた電極支持板により構成され、前記抵抗部は、前記電極支持板に設けられていることを特徴とする、請求項5に記載のプラズマ処理装置。
- 前記上部電極は、被処理体と対向する電極板と、当該電極板の上面に設けられた電極支持板により構成され、前記抵抗部は、前記電極板側に設けられていることを特徴とする、請求項5に記載のプラズマ処理装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2012010445A JP5848140B2 (ja) | 2012-01-20 | 2012-01-20 | プラズマ処理装置 |
TW102101532A TWI576911B (zh) | 2012-01-20 | 2013-01-15 | 電漿處理裝置 |
CN201711079374.7A CN107833819B (zh) | 2012-01-20 | 2013-01-16 | 等离子体处理装置 |
CN201310015601.5A CN103219216B (zh) | 2012-01-20 | 2013-01-16 | 等离子体处理装置 |
US13/743,586 US9055661B2 (en) | 2012-01-20 | 2013-01-17 | Plasma processing apparatus |
KR1020130005717A KR101997823B1 (ko) | 2012-01-20 | 2013-01-18 | 플라즈마 처리 장치 |
KR1020190079482A KR102098698B1 (ko) | 2012-01-20 | 2019-07-02 | 플라즈마 처리 장치 |
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JP2012010445A JP5848140B2 (ja) | 2012-01-20 | 2012-01-20 | プラズマ処理装置 |
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JP2015230378A Division JP2016096342A (ja) | 2015-11-26 | 2015-11-26 | プラズマ処理装置 |
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JP2013149865A true JP2013149865A (ja) | 2013-08-01 |
JP5848140B2 JP5848140B2 (ja) | 2016-01-27 |
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US (1) | US9055661B2 (ja) |
JP (1) | JP5848140B2 (ja) |
KR (2) | KR101997823B1 (ja) |
CN (2) | CN103219216B (ja) |
TW (1) | TWI576911B (ja) |
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JP2016219729A (ja) * | 2015-05-26 | 2016-12-22 | サムコ株式会社 | プラズマ処理装置用基板温度調整機構 |
JPWO2017149738A1 (ja) * | 2016-03-03 | 2018-12-06 | コアテクノロジー株式会社 | プラズマ処理装置及びプラズマ処理用反応容器の構造 |
JP2019067503A (ja) * | 2017-09-28 | 2019-04-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN111383892A (zh) * | 2018-12-29 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置中气体喷淋头的接地连接结构 |
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JP7002268B2 (ja) | 2017-09-28 | 2022-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN111383892A (zh) * | 2018-12-29 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置中气体喷淋头的接地连接结构 |
KR20220121721A (ko) | 2021-02-25 | 2022-09-01 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 및 기판 지지부 |
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CN103219216B (zh) | 2017-11-28 |
US20130206338A1 (en) | 2013-08-15 |
TW201349337A (zh) | 2013-12-01 |
CN107833819B (zh) | 2020-05-08 |
TWI576911B (zh) | 2017-04-01 |
US9055661B2 (en) | 2015-06-09 |
CN103219216A (zh) | 2013-07-24 |
JP5848140B2 (ja) | 2016-01-27 |
CN107833819A (zh) | 2018-03-23 |
KR20190082721A (ko) | 2019-07-10 |
KR101997823B1 (ko) | 2019-07-08 |
KR102098698B1 (ko) | 2020-04-08 |
KR20130085984A (ko) | 2013-07-30 |
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