JP2013149698A - Integrated soar cell manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film solar cell manufacturing method with more excellent production efficiency.SOLUTION: A first electrode layer 12 is formed on a substrate 10 that has an insulation property at least on its surface, and an electrode layer separation groove 21 for separating the first electrode layer 12 into plural regions is formed. After a photoelectric conversion layer 13 is laminated thereon, a first element separation groove 22 and a conducting groove 23 are formed from its lamination face side. The first element separation groove 22 is filled with an insulation material 30, so as to form a second electrode layer 16 including a surface of the insulation material 30, and embed a second electrode material in the conducting groove 23. Furthermore, a second element separation groove 24 of a depth for exposing the first electrode layer 12 from a surface of the second electrode layer 16 is formed opposite to the first element separation groove 22 with respect to the conducting groove 23, and is filled with an insulation material 34, so as to manufacture an integrated solar cell.

Description

  The present invention relates to a method for manufacturing a thin film solar cell having an integrated structure, and particularly to a method for manufacturing an integrated solar cell having high power generation efficiency.

  BACKGROUND ART A photoelectric conversion element having a stacked structure of two electrode layers and a photoelectric conversion semiconductor layer that generates charges by light absorption sandwiched between the two electrode layers is used for applications such as solar cells.

  Conventionally, Si-based solar cells using bulk single-crystal Si or polycrystalline Si, or thin-film amorphous Si have been mainstream, but research and development of compound semiconductor-based solar cells that do not depend on Si have been made. As a compound semiconductor solar cell, CIS (Cu-In-Se) system or CIGS (Cu-In-Ga-Se) composed of a bulk system such as a GaAs system, an IB group element, an IIIB group element, and a VIB group element is used. And other thin film systems are known. The CIS system or CIGS system is reported to have a high light absorption rate and high energy conversion efficiency.

  In order to increase the output of a solar cell, it is necessary to integrate a plurality of photoelectric conversion elements (solar cell) connected in series on a single substrate. Various forms have been proposed for the (integration) method.

  Conventionally, a first electrode layer, a photoelectric conversion layer, and a second electrode layer are formed, and a second electrode layer is formed in a groove from which a part of the electrode layer has been removed. A configuration in which the electrode layer is electrically connected is known. A first electrode layer is formed on a substrate, an electrode layer separation groove for dividing the first electrode layer is formed, a photoelectric conversion layer is stacked, a conduction groove is provided in the photoelectric conversion layer, and a conduction groove is provided on the photoelectric conversion layer. In general, a transparent electrode layer is formed so as to fill a gap, and a separation groove for separating the transparent electrode layer between cells is generally used. Each groove is formed by removing a part of the photoelectric conversion layer using laser light irradiation, a metal needle, or the like. At this time, the residue of the photoelectric conversion layer may adhere in the conductive groove, and the resistance of the residue itself is high, so that the electrical resistance of the electrical connection portion between the first electrode layer and the second electrode layer is high. There is a problem that becomes large.

  Patent Document 1 proposes that the electrical resistance at the electrical connection portion is suppressed by forming a contact layer having a resistivity lower than that of the transparent electrode layer in the above-described conductive groove.

  In Patent Document 2, a contact electrode region for forming a contact electrode for serially connecting between cells by modifying a part of a photoelectric conversion layer to improve conductivity and forming a dead space that cannot contribute to power generation is provided. In order to reduce this, it has been proposed to form a separation groove adjacent to the contact electrode for separating the cells.

  Patent Document 3 proposes forming an insulating thin film in the separation groove in order to reduce the leakage current between the cells in the separation groove that separates the cells.

  In Patent Document 4, a first electrode layer partitioned for each cell is formed on a substrate, a photoelectric conversion layer and a second electrode layer are formed, and then a conduction groove and an element separation groove are formed. A method of connecting cells in series by filling conductive grooves in conductive grooves has been proposed.

  In Patent Document 5, after laminating a first electrode layer and a photoelectric conversion layer on a substrate, two grooves that penetrate both layers are formed, an insulating material is embedded in one of the grooves, and the other is A method is disclosed in which a second electrode layer material is embedded and a groove for separating the second electrode layer between cells is formed adjacent to the other one embedded with the second electrode layer material. Here, the second electrode layer material embedded in one of the two grooves serves as an electrical connection between adjacent cells.

  In Patent Document 6, after forming a first electrode layer on a substrate and forming an electrode layer separation groove for separating the first electrode layer, a photoelectric conversion layer is stacked, and the first conversion layer is formed on a part of the photoelectric conversion layer. The element isolation groove is formed, and one wall surface thereof is covered with an insulating material, and then the second electrode layer is formed over the entire surface of the photoelectric conversion layer and the insulating material, and then the first element isolation groove is formed. A method of forming a second element isolation groove for separating the second electrode layer and the photoelectric conversion layer in parallel is disclosed.

JP 2010-2829098 A JP 2007-317868 A JP 7-2111928 A JP 61-50381 A JP-A-5-183177 Japanese Patent Laid-Open No. 08-139351

  However, in Patent Document 1, the separation groove provided for element separation is a gap, and in this gap portion, residues of the transparent electrode layer and the photoelectric conversion layer generated at the time of groove formation adhere to each other, and between the cells. There is a risk of leakage or short circuit.

  In Patent Document 2, a contact layer having a low resistance is formed by laser irradiation as compared with a portion where a portion of the photoelectric conversion layer is not irradiated with laser, but the contact layer thus formed has a resistivity higher than that of metal or the like. Is high, resulting in a loss of power at the connecting portion, and as a result, the power generation efficiency cannot be sufficiently improved. Further, in Patent Document 2, the separation groove provided by scribing for element separation is a gap, and the transparent electrode layer and the photoelectric conversion layer residue generated at the time of groove formation adhere to this gap portion, and the gap between cells There is a risk of leakage or short circuit.

  In Patent Document 3, there is a problem that the conductive groove is buried with the second electrode layer, and the conductivity at the connection portion is low.

  In Patent Document 4, the separation groove provided by scribing for element separation is a gap, and a residue of the transparent electrode layer and the photoelectric conversion layer generated when the groove is formed adheres to the gap portion, and leaks between cells. Or short circuit may occur.

  In Patent Document 5, since one wall surface of the groove embedded with the second electrode layer material for conduction is the wall surface of the cell, the second electrode layer material is applied to the photoelectric conversion layer of the cell having the wall surface. There is a problem in that the power generation efficiency is lowered due to the contact, which causes current leakage in the photoelectric conversion layer.

  In Patent Document 6, when laser or mechanical scribe is used in element isolation by the second element isolation groove, residues of the second electrode layer and photoelectric conversion layer remain, and current leakage between cells or in cells due to these residues. Therefore, there is a problem that power generation efficiency decreases.

  It is an object of the present invention to provide a method for manufacturing an integrated solar cell having an integrated structure that can further improve power generation efficiency.

In the first method for manufacturing an integrated solar cell according to the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer are arranged in series on a substrate. An integrated solar cell manufacturing method comprising:
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
After laminating at least the photoelectric conversion layer so as to embed the electrode layer separation groove on the first electrode layer, the first element separation groove having a depth from the lamination surface to the surface position of the first electrode layer and the lamination surface Forming a conduction groove having a depth exposing the first electrode layer from
Filling the first element isolation groove with an insulating material;
Forming a second electrode layer on the laminated surface including the surface of the insulating material filled in the first element isolation groove and embedding the second electrode layer material in the conduction groove;
Forming a second element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer on the side opposite to the first element isolation groove of the conduction groove; and second element The method further includes a step of filling the separation groove with an insulating material.

In the second integrated solar cell manufacturing method of the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
After laminating at least the photoelectric conversion layer so as to embed the electrode layer separation groove on the first electrode layer, the first element separation groove and depth from the lamination surface to the first electrode layer surface position Forming a conductive groove having a depth exposing one of the electrode layers;
Filling the first element isolation groove with an insulating material;
Filling a conductive groove into the conductive groove;
A step of forming a second electrode layer on the laminated surface including the surfaces of the insulating material and the conductive material filled in each groove, and a second depth that exposes the first electrode layer from the surface of the second electrode layer And a step of filling the second element isolation groove with an insulating material, and a step of forming the element isolation groove on the side opposite to the first element isolation groove.

In the third integrated solar cell manufacturing method of the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
Forming at least a photoelectric conversion layer so as to embed an electrode layer separation groove on the first electrode layer, and then forming a conduction groove having a depth exposing the first electrode layer from the lamination surface;
Filling a conductive groove into the conductive groove;
Forming a second electrode layer on the laminated surface including the surface of the conductive material filled in the conductive groove;
Forming an element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer on a side opposite to the electrode layer isolation groove of the conducting groove; and filling the element isolation groove with an insulating material Including a process.

In the fourth method for manufacturing an integrated solar cell according to the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
Forming at least a photoelectric conversion layer so as to embed an electrode layer separation groove on the first electrode layer, and then forming a first element separation groove having a depth exposing the first electrode layer from the laminated surface;
Forming a conductive portion that covers one wall surface of the first element isolation groove and that is exposed to the first element isolation groove and that contacts the first electrode layer extending toward the other wall surface;
Forming a second electrode layer on the laminated surface and on the surface of the conductive portion and filling the first element isolation groove; and exposing the first electrode layer from the surface of the second electrode layer Forming a second element isolation groove having a depth to be formed at an end portion on the other wall surface side of the first element isolation groove or a portion on the other wall surface side outside the first element isolation groove. It is characterized by.

  Here, it is preferable to further include a step of filling the second element isolation groove with an insulating material.

In the fifth integrated solar cell manufacturing method of the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
A laminated body is formed by laminating at least a photoelectric conversion layer so as to embed an electrode layer separation groove on the first electrode layer, and an opening groove having a depth exposing the first electrode layer from the surface of the laminated body, An opening groove part in which a part of the laminate is left in a position spaced from both walls of the opening groove part in the groove width direction of the opening groove part is interposed between one wall surface of the opening groove part and a part of the laminate. Forming the first electrode layer extending toward the other wall surface so as to be at least partially exposed;
A conductive ink is dropped from the part of the laminated body onto one wall surface side of the opening groove to cover the one wall surface, and is exposed between the one wall surface and the part of the laminated body. Forming a conductive portion in contact with the electrode layer of
A step of forming the second electrode layer on the surface of the laminated body and the surface of the conductive portion and filling the opening groove, and a second depth that exposes the first electrode layer from the surface of the second electrode layer. A step of forming the element isolation groove on the other wall surface side of the opening groove portion with respect to the part of the stacked body.

  Here, it is preferable to further include a step of filling the second element isolation groove with an insulating material.

  Further, it is preferable that the opening groove is formed by forming two grooves using a mechanical scribing method at a predetermined interval so that a part of the stacked body remains in a region to be the opening groove.

In the sixth integrated solar cell manufacturing method of the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
After stacking at least the first electrode layer and the photoelectric conversion layer on a substrate having at least a surface insulating property, the first electrode having a depth that exposes the surface of the substrate through the first electrode layer from the stacking surface. Forming a conductive groove having a depth exposing the first electrode layer from the element isolation groove and the laminated surface;
Filling the first element isolation groove with an insulating material;
Filling a conductive groove into the conductive groove;
Forming a second electrode layer on the laminated surface including the surfaces of the insulating material and the conductive material filled in each groove;
Forming a second element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer on the side opposite to the first element isolation groove of the conduction groove; and second element The method includes a step of filling the separation groove with an insulating material.

In the seventh integrated solar cell manufacturing method of the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
At least a first electrode layer and a photoelectric conversion layer are sequentially laminated on a substrate having an insulating surface at least, and then a first element isolation groove having a depth exposing the first electrode layer from the laminated surface is formed. Process,
Forming an electrode layer separation groove for separating the first electrode layer in a part of the first electrode layer exposed on the bottom surface of the first element separation groove;
Forming an insulating portion covering one wall surface of the first element isolation trench and embedding the electrode layer isolation trench;
A step of forming a conductive layer from the laminated surface on one wall surface to the first electrode layer exposed on the bottom surface of the first element isolation groove via the surface of the insulating portion;
A step of forming a second electrode layer on the surface of the conductive layer and the laminated surface, and a second element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer. The method includes a step of forming at an end portion on the other wall surface side of the separation groove or a portion on the other wall surface side outside the first element separation groove.

  Here, it is preferable to further include a step of filling the second element isolation groove with an insulating material.

According to the eighth integrated solar cell manufacturing method of the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
At least a first electrode layer and a photoelectric conversion layer are stacked on a substrate whose surface is insulative to form a stacked body, and an opening groove having a depth exposing the first electrode layer from the surface of the stacked body A step of forming an opening groove part in which a part of the laminate is left at a position separated from both walls of the opening groove part in the groove width direction of the opening groove part;
Forming an electrode layer separation groove for separating the first electrode layer in the first electrode layer exposed between one wall surface of the opening groove and the part of the laminate;
A step of dropping an insulating ink from the part of the laminated body onto one wall surface of the opening groove to form an insulating portion that covers the one wall and embeds the electrode layer separation groove;
A step of forming a second electrode layer on the surface of the laminated body and the surface of the insulating portion, and filling the opening groove, and a second depth that exposes the first electrode layer from the surface of the second electrode layer. And a step of forming the element isolation groove on the other wall surface side of the opening groove part rather than a part of the stacked body.

  Here, it is preferable to further include a step of filling the second element isolation groove with an insulating material.

  Further, it is preferable that the opening groove is formed by forming two grooves using a mechanical scribing method at a predetermined interval so that a part of the stacked body remains in a region to be the opening groove.

In the ninth integrated solar cell manufacturing method of the present invention, a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged on a substrate and connected in series. An integrated solar cell manufacturing method comprising:
At least a first electrode layer and a photoelectric conversion layer are stacked on a substrate whose surface is insulative to form a stacked body, and an opening groove having a depth exposing the first electrode layer from the surface of the stacked body A step of forming an opening groove part in which a part of the laminate is left at a position separated from both walls of the opening groove part in the groove width direction of the opening groove part;
Forming an electrode layer separation groove for separating the first electrode layer in the first electrode layer exposed between one wall surface of the opening groove and the part of the laminate;
A step of dropping an insulating ink from the part of the laminated body onto one wall surface of the opening groove to form an insulating portion that covers the one wall and embeds the electrode layer separation groove;
A step of forming a conductive layer from the surface of the laminate on one wall surface to the first electrode layer exposed between the one wall surface and the part of the laminate via the surface of the insulating portion;
A step of forming the second electrode layer on the surface of the laminate and the surface of the conductive layer, and filling the opening groove, and a second depth that exposes the first electrode layer from the surface of the second electrode layer. A step of forming the element isolation groove on the other wall surface side of the opening groove portion with respect to the part of the stacked body.

  Here, it is preferable to further include a step of filling the second element isolation groove with an insulating material.

  Further, it is preferable that the opening groove is formed by forming two grooves using a mechanical scribing method at a predetermined interval so that a part of the stacked body remains in a region to be the opening groove.

  According to the integrated solar cell manufacturing method of the present invention, an integrated solar cell with high power generation efficiency can be manufactured.

It is a schematic plan view of the integrated solar cell manufactured with the manufacturing method of embodiment of this invention. It is a typical expansion perspective view which shows the principal part of the integrated solar cell 1 manufactured with the manufacturing method of the 1st Embodiment of this invention. It is typical sectional drawing which shows process ad of the manufacturing method of 1st Embodiment. It is typical sectional drawing which shows process eg of the manufacturing method of 1st Embodiment. It is a typical expansion perspective view which shows the principal part of the integrated solar cell 2 manufactured with the manufacturing method of the 2nd Embodiment of this invention. It is typical sectional drawing which shows process eh of the manufacturing method of 2nd Embodiment. It is a typical expansion perspective view which shows the principal part of the integrated solar cell 3 manufactured with the manufacturing method of the 3rd Embodiment of this invention. It is typical sectional drawing which shows process ac of the manufacturing method of 3rd Embodiment. It is typical sectional drawing which shows process df of the manufacturing method of 3rd Embodiment. It is a typical expansion perspective view which shows the principal part of the integrated solar cell 4 manufactured with the manufacturing method of the 4th Embodiment of this invention. It is a typical expansion perspective view which shows the principal part of the integration solar cell 4 'of the example of a change of 4th Embodiment. It is typical sectional drawing which shows process ad of the manufacturing method of 4th Embodiment. It is typical sectional drawing which shows process ef of the manufacturing method of 4th Embodiment. It is typical sectional drawing which shows process e'-f 'of the manufacturing method change example of 4th Embodiment. It is a typical expansion perspective view which shows the principal part of the integrated solar cell 5 manufactured with the manufacturing method of the 5th Embodiment of this invention. It is a typical expansion perspective view which shows the principal part of the integration solar cell 5 'of the example of a change of 5th Embodiment. It is typical sectional drawing which shows process ad of the manufacturing method of 5th Embodiment. It is typical sectional drawing which shows process ef of the manufacturing method of 5th Embodiment. It is typical sectional drawing which shows process e'-f 'of the manufacturing method change example of 5th Embodiment. It is a typical expansion perspective view which shows the principal part of the integrated solar cell 6 manufactured with the manufacturing method of the 6th Embodiment of this invention. It is typical sectional drawing which shows process ac of the manufacturing method of 6th Embodiment. It is typical sectional drawing which shows process df of the manufacturing method of 6th Embodiment. It is a typical expansion perspective view which shows the integrated solar cell 7 principal part manufactured with the manufacturing method of the 7th Embodiment of this invention. It is a typical expansion perspective view which shows the principal part of the integration solar cell 7 'of the example of a change of 7th Embodiment. It is typical sectional drawing which shows process ac of the manufacturing method of 7th Embodiment. It is typical sectional drawing which shows process de of the manufacturing method of 7th Embodiment. It is typical sectional drawing which shows process fg of the manufacturing method of 7th Embodiment. It is typical sectional drawing which shows process f'-g 'of the manufacturing method change example of 7th Embodiment. It is a typical expansion perspective view which shows the integrated solar cell 8 principal part manufactured with the manufacturing method of the 8th Embodiment of this invention. It is a typical expansion perspective view which shows the principal part of the integration solar cell 8 'of the example of a change of 8th Embodiment. It is typical sectional drawing which shows process ac of the manufacturing method of 8th Embodiment. It is typical sectional drawing which shows process de of the manufacturing method of 8th Embodiment. It is typical sectional drawing which shows process d'-e 'of the other modification of the manufacturing method of 8th Embodiment. It is a typical expansion perspective view which shows the principal part of the integrated solar cell 9 manufactured with the manufacturing method of the 9th Embodiment of this invention. It is a typical expansion perspective view which shows the principal part of the integration solar cell 9 'of the modification of 9th Embodiment. It is typical sectional drawing which shows process df of the manufacturing method of 9th Embodiment. It is typical sectional drawing which shows process e'-f 'of the modification of the manufacturing method other than 9th Embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. In each figure, the scale of each component is appropriately changed from the actual one.

FIG. 1 is a schematic plan view of an integrated solar cell common to each embodiment described below.
As shown in FIG. 1, an integrated solar cell 1 (2, 3, 4, 5, 6, 7, 8, and 9) manufactured by the manufacturing method of the present invention is, for example, a strip on a rectangular substrate 10. A plurality of photoelectric conversion elements (solar cells) 20a, 20b, 20c... Are connected in series. The solar cells 20a, 20b, 20c, ... are formed in a strip shape extending long in the width direction W (extending direction) perpendicular to the longitudinal direction L (arrangement direction) on the substrate 10 and provided between the cells. In the connected region 50, the cells are connected in series. Note that electrodes (not shown) for extracting power are formed at both ends in the cell arrangement direction. Here, the connection portion region 50 is a region where a structure that functions as a separation function for separating cells and a connection function for electrically connecting cells in series is formed.

  Each cell is basically formed by laminating a first electrode layer, a photoelectric conversion layer, and a second electrode layer, but may include other layers. In the following embodiments, a compound semiconductor is provided as the photoelectric conversion layer 13, the first electrode layer is the back electrode layer 12 made of metal, the second electrode layer is the transparent electrode layer 16, and the photoelectric conversion layer 13. A substrate type structure having a buffer layer 14 between the transparent electrode layer 16 and the transparent electrode layer 16 will be described as an example.

In the integrated solar cell 1 having this configuration, when light is incident on the solar cells 20a, 20b, 20c,... From the transparent electrode layer 16 side, the light passes through the transparent electrode layer 16 and the buffer layer 14, An electromotive force is generated in the conversion layer 13 and, for example, a current from the transparent electrode layer 16 toward the back electrode layer 12 is generated. The electric power generated in the integrated solar cell 1 can be taken out of the solar cell 1 from power extraction electrodes (not shown) provided at both ends in the cell arrangement direction. In the integrated solar cell 1, the buffer layer 14 is not necessarily provided depending on the configuration of the photoelectric conversion layer 13. Further, a window layer (insulating layer) may be provided between the buffer layer 14 and the transparent electrode layer 16.
Each embodiment described below has a different structure and a method for forming the connection region 50 between cells. Each embodiment will be described below.

“First Embodiment”
FIG. 2 is a schematic perspective view showing a main part of the integrated solar cell 1 manufactured by the manufacturing method of the first embodiment, and is a perspective view of a broken line part II in the plan view of FIG.

  As shown in FIG. 2, the integrated solar cell 1 has a cell in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Adjacent to each other via the connection area 50 and connected in series in the connection area 50.

In the connection portion region 50, an electrode layer separation groove 21 provided in the back electrode layer 12 and a buffer layer in order from one cell (here, cell 20a) side to the other cell (here, cell 20b). First element isolation groove 22 and conduction groove 23 having a depth from 14 to the surface position of back electrode layer 12, and second element isolation having a depth from transparent electrode layer 16 to the surface position of back electrode layer 12 A groove 24 is provided. As for the width of each groove, for example, the width of each groove is 10 μm, and the width of the connection region 50 is about 70 μm.
The photoelectric conversion layer 13 is embedded in the electrode layer separation groove 21, and the first element separation groove 22 and the second element separation groove 24 are filled with insulating materials 30 and 34. 23 is filled with the material of the transparent electrode layer 16.

  The cells are separated by the electrode layer separation groove 21 and the first and second element separation grooves 22 and 24 filled with the insulating materials 30 and 34, and the transparent electrode layer material filled in the conduction groove 23 is separated. Thus, the transparent electrode layer 16 of one cell 20a and the back electrode layer 12 of the other cell 20b that are adjacent to each other with the connection portion region 50 interposed therebetween are electrically connected.

  Since the first element isolation groove 22 is provided and the insulating material 30 is further filled, current leakage in the photoelectric conversion layer of one cell 20a can be prevented, and the second element isolation groove 24 is further filled with the insulating material 34, whereby current leakage in the photoelectric conversion layer of the other cell 20b can be prevented. Photoelectric conversion efficiency can be improved because the wall of each cell is insulated and leakage is prevented. In addition, the element isolation grooves 22 and 24 filled with these insulating materials 30 and 34 can effectively prevent a short circuit between the cells 20a and 20b.

  In the present embodiment, as shown in part of FIG. 2, the conduction groove 23 is formed across the entire width direction W of the substrate 10 in the connection region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

  Below, the manufacturing method of 1st Embodiment is demonstrated based on FIG. 3, FIG. FIG. 3 and FIG. 4 are schematic cross-sectional views showing the manufacturing process of the first embodiment, and show the main part of the integrated structure including the partial cells 20a and 20b and the connection region 50 therebetween.

  First, a substrate 10 having a predetermined size with at least a surface being insulative is prepared. For example, the board | substrate 10 provided with the insulating layer 10a on the metal base material surface is used.

  As shown in FIG. 3 a, after the back electrode layer 12 is formed on the surface of the substrate 10, an electrode layer separation groove 21 in which the surface of the substrate 10 is exposed at the bottom is formed in the back electrode layer 12. Is divided into a plurality of regions. The electrode layer separation groove 21 is preferably formed by laser scribing.

  In this embodiment, since the electrode layer separation groove 21 is formed before the back electrode layer 12 receives a thermal history when forming the photoelectric conversion layer or the like, the back electrode layer is made of a material that is cured by a thermal history such as Mo. Even so, scribing can be performed with relatively low power. After the back electrode layer is cured, a relatively high power is required, so that an expensive laser scribing device is required. Further, when a relatively large power is used, the substrate may be damaged. Normally, cleaning is performed after the scribing process, but when the electrode layer separation groove is scribed on the back electrode layer after laminating up to the transparent electrode layer, burrs and dust generated during the scribe formation cannot be removed sufficiently, There is a risk of quality degradation. According to the manufacturing method of this embodiment, these problems do not occur, and an integrated solar cell with good quality can be manufactured at low cost.

  Next, as shown in FIG. 3 b, the photoelectric conversion layer 13 and the buffer layer 14 are sequentially laminated so as to cover the surface of the substrate 10 exposed at the bottoms of the back electrode layer 12 and the electrode layer separation groove 21.

  Next, as shown in FIG. 3c, a first element isolation groove 22 and a conduction groove 23 having a depth substantially parallel to the electrode layer isolation groove 21 and exposing the back electrode layer 12 are formed from the laminated surface side. . The first element isolation groove 22 and the conduction groove 23 are preferably formed by a mechanical scribing method. In this step, the first element isolation groove 22 is formed so as to overlap the electrode layer isolation groove 21 in a partial region thereof, and the conduction groove 23 is formed on the back electrode layer 12 continuous with the other cell 20b. To do. That is, the photoelectric conversion layer and the back electrode layer 12 embedded in the electrode layer separation groove 21 are exposed on the bottom surface of the first element isolation groove 22 formed here, and the other surface is exposed on the bottom surface of the conduction groove 23. The back electrode layer 12 continuous to the cell 20b is exposed.

  Next, as shown in FIG. 3 d, an insulating ink (insulating material) 30 is injected and filled into the first element isolation groove 22.

  Thereafter, as shown in e of FIG. 4, the transparent electrode layer 16 is formed so as to cover the entire surface including the buffer layer 14 and the insulating material 30 filled in the first element isolation trench 22. At this time, the transparent conductive layer material is also filled in the conduction groove 23 to form a connection portion 41 that electrically connects the transparent electrode layer 16 of one cell 20a and the back electrode layer 12 of the other cell 20b. .

  Further, a second element isolation groove 24 is formed closer to the cell 20b than the conduction groove 23 as shown in FIG. 4f, and insulation is provided in the second element isolation groove 24 as shown in FIG. 4g. Insulating ink (insulating material) 34 is injected and filled.

  The integrated solar cell 1 shown in FIG. 2 can be manufactured as described above.

  Although it has a cell isolation function even if an insulating material is not put in the second element isolation groove 24, when the second element isolation groove 24 is formed, a residue generated when the transparent conductive layer is scribed is the second element isolation groove 24. If it is inside, current insulation in the cell 20b or a short circuit between the cells may occur, and the insulation is not necessarily sufficient. However, by filling the second element isolation trench 24 with the insulating material 34 as in the present embodiment, the insulation can be improved, and current leakage and short-circuiting can be prevented and integration with higher photoelectric conversion efficiency can be achieved. A solar cell can be obtained.

“Second Embodiment”
FIG. 5 is a schematic perspective view showing a main part of the integrated solar cell 2 manufactured by the manufacturing method of the second embodiment, and is a perspective view of a broken line part II in the plan view of FIG.

  As shown in FIG. 5, the integrated solar cell 2 includes a cell in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Adjacent to each other via the connection area 50 and connected in series in the connection area 50.

In the connection portion region 50, an electrode layer separation groove 21 provided in the back electrode layer 12 and a buffer layer in order from one cell (here, cell 20a) side to the other cell (here, cell 20b). First element isolation groove 22 and conduction groove 23 having a depth from 14 to the surface position of back electrode layer 12, and second element isolation having a depth from transparent electrode layer 16 to the surface position of back electrode layer 12 A groove 24 is provided. The width of each groove is, for example, about 10 μm, and the width of the connection region 50 is about 70 μm.
The photoelectric conversion layer 13 is embedded in the electrode layer separation groove 21, and the first element separation groove 22 and the second element separation groove 24 are filled with insulating materials 30 and 34. 23 is filled with a conductive material 40.

  The cells are separated by the first and second element isolation grooves 22 and 24 filled with the electrode layer separation groove 21 and the insulating materials 30 and 34, and the conductive material 40 filled in the conduction groove 23 The transparent electrode layer 16 of one cell 20a adjacent to the connection part region 50 is electrically connected to the back electrode layer 12 of the other cell 20b.

  Since the first element isolation groove 22 is provided and the insulating material 30 is further filled, current leakage in the photoelectric conversion layer of one cell 20a can be prevented, and the second element isolation groove 24 is further filled with the insulating material 34, whereby current leakage in the photoelectric conversion layer of the other cell 20b can be prevented. Photoelectric conversion efficiency can be improved because the wall of each cell is insulated and leakage is prevented. In addition, the element isolation grooves 22 and 24 filled with these insulating materials 30 and 34 can effectively prevent a short circuit between the cells 20a and 20b. Further, the conductive material 40 is made of a material having a resistance lower than that of the transparent electrode layer material, and electrical loss at the connecting portion in series connection can be kept low.

  In the present embodiment, as shown in part of FIG. 5, the conduction groove 23 is formed over the entire width direction W of the substrate 10 in the connection portion region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

Below, the manufacturing method of 2nd Embodiment is demonstrated based on FIG. 3, FIG. FIG. 3 and FIG. 6 are schematic cross-sectional views showing the manufacturing process of the second embodiment, and show the main part of the integrated structure including the partial cells 20a, 20b and the connection region 50 therebetween.
The manufacturing method of the second embodiment is the same as the manufacturing method of the first embodiment with respect to steps a to d shown in FIG. 3, and the description of the manufacturing method of the first embodiment is incorporated. Here, the manufacturing process after e in FIG. 6 will be described.

  After steps a to d in FIG. 3, as shown in e in FIG. 6, conductive ink (conductive material) 40 is injected and filled into the conductive groove 23.

  After that, as shown in FIG. 6 f, the entire surface including the buffer layer 14, the insulating material 30 filled in the first element isolation groove 22, and the conductive material 40 filled in the conduction groove 23 is covered. Thus, the transparent electrode layer 16 is formed.

  Further, as shown in FIG. 6g, a second element isolation groove 24 is formed on the cell 20b side of the conduction groove 23, and insulation is provided in the second element isolation groove 24 as shown in FIG. 6h. Insulating ink (insulating material) 34 is injected and filled.

  As described above, the integrated solar cell 2 shown in FIG. 5 can be manufactured.

Although it has a cell isolation function even if an insulating material is not put in the second element isolation groove 24, when the second element isolation groove 24 is formed, a residue generated when the transparent conductive layer is scribed is the second element isolation groove 24. If it is inside, current insulation in the cell 20b or a short circuit between the cells may occur, and the insulation is not necessarily sufficient. However, by filling the second element isolation trench 24 with the insulating material 34 as in the present embodiment, the insulation can be improved, and current leakage and short-circuiting can be prevented and integration with higher photoelectric conversion efficiency can be achieved. A solar cell can be obtained.
Further, since the conductive groove 23 is filled with the conductive material 40 having a resistance lower than that of the transparent electrode layer material, there is little electrical loss at the connection portion, and a further improvement effect of photoelectric conversion efficiency can be obtained.

“Third Embodiment”
FIG. 7 is a schematic perspective view showing a main part of the integrated solar cell 3 manufactured by the manufacturing method of the third embodiment, and is a perspective view of a broken line part II in the plan view of FIG.

  As shown in FIG. 7, the integrated solar cell 3 has a cell in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially laminated on a substrate 10 whose surface layer is an insulating layer 10 a. Adjacent to each other via the connection area 50 and connected in series in the connection area 50.

In the connection region 50, the electrode layer separation groove 21 and the buffer layer 14 provided in the back electrode layer 12 in this order from one cell (here, the cell 20a) side to the other cell (here, the cell 20b). To the surface position of the back electrode layer 12, and an element isolation groove 24 having a depth from the transparent electrode layer 16 to the surface position of the back electrode layer 12. The width of each groove is, for example, about 10 μm.
The photoelectric conversion layer 13 is embedded in the electrode layer separation groove 21, the element separation groove 24 is filled with an insulating material 34, and the conduction groove 23 is filled with a conductive material 40.

  The cells are separated from each other by the electrode layer separation groove 21 and the element separation groove 24 filled with the insulating material 34, and the conductive material 40 filled in the conduction groove 23 allows one of the adjacent ones with the connection region 50 interposed therebetween. The transparent electrode layer 16 of the cell 20a and the back electrode layer 12 of the other cell 20b are electrically connected.

  By providing the element isolation groove 24 and further being filled with the insulating material 34, current leakage in the photoelectric conversion layer of the other cell 20b can be prevented, and the photoelectric conversion efficiency can be improved. . Moreover, the short circuit between the cells 20a and 20b can be effectively prevented by the element isolation groove 24 filled with these insulating materials 34. Further, the resistivity of the conductive material 40 is lower than that of the transparent electrode layer material, and the conductivity is high. Therefore, the electrical loss at the connection part connected in series can be suppressed low.

  In the present embodiment, as shown in part of FIG. 7, the conduction groove 23 is formed over the entire width direction W of the substrate 10 in the connection portion region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

  Below, the manufacturing method of 3rd Embodiment is demonstrated based on FIG. 8 and FIG. FIGS. 8 and 9 are schematic cross-sectional views showing the manufacturing process of the third embodiment, and show the main part of the integrated structure including the partial cells 20a and 20b and the connection region 50 therebetween.

  First, a substrate 10 having a predetermined size with at least a surface being insulative is prepared. For example, the board | substrate 10 provided with the insulating layer 10a on the metal base material surface is used.

  As shown to a of FIG. 8, after forming the back surface electrode layer 12 in the surface of the board | substrate 10, the electrode layer isolation | separation groove | channel 21 which the surface of the board | substrate 10 exposes to the bottom part is formed in the back surface electrode layer 12, and the back surface electrode layer 12 is formed. Is divided into a plurality of regions. The electrode layer separation groove 21 is preferably formed by laser scribing.

  In this embodiment, since the electrode layer separation groove 21 is formed before the back electrode layer 12 receives a thermal history when forming the photoelectric conversion layer or the like, the back electrode layer is made of a material that is cured by a thermal history such as Mo. Even so, scribing can be performed with relatively low power. After the back electrode layer is cured, a relatively high power is required, so that an expensive laser scribing device is required. Further, when a relatively large power is used, the substrate may be damaged. Usually, cleaning is performed after the scribing process, but when the electrode layer separation groove is scribed after laminating up to the transparent electrode layer, burrs and dust generated during the scribe formation cannot be removed sufficiently, and the quality of the apparatus is deteriorated. There is a fear. According to the manufacturing method of this embodiment, these problems do not occur, and an integrated solar cell with good quality can be manufactured at low cost.

  Next, as shown in FIG. 8 b, the photoelectric conversion layer 13 and the buffer layer 14 are sequentially laminated so as to cover the surface of the substrate 10 exposed at the bottoms of the back electrode layer 12 and the electrode layer separation groove 21.

  Next, as shown in FIG. 8 c, a conduction groove 23 is formed having a depth substantially parallel to the electrode layer separation groove 21 and exposing the back electrode layer 12 from the laminated surface side. The conducting groove 23 is preferably formed by a mechanical scribing method. In this step, the conductive groove 23 is formed on the back electrode layer 12 continuous with the other cell 20b. That is, the back electrode layer 12 continuous to the other cell 20b is exposed on the bottom surface of the conductive groove 23 formed here.

Next, as shown in FIG. 9d, a conductive ink (conductive material) 40 is injected and filled into the conductive groove 23, and the surface including the buffer layer 14 and the conductive material 40 filled in the conductive groove 22 is filled. The transparent electrode layer 16 is formed so as to follow the entire area.
Further, as shown in FIG. 9e, an element isolation groove 24 is formed on the cell 20b side of the conduction groove 23, and as shown in FIG. 9f, an insulating ink (insulating material) is formed in the element isolation groove 24. 34 is injected and filled.

  As described above, the integrated solar cell 2 shown in FIG. 7 can be manufactured.

Even if an insulating material is not put in the element isolation groove 24, it has a cell isolation function. However, when the second element isolation groove 24 is formed, a residue generated when the transparent conductive layer is scribed is in the second element isolation groove 24. Insulation is not always sufficient, such as current leakage in the cell 20b or short circuit between the cells. However, by filling the second element isolation trench 24 with the insulating material 34 as in the present embodiment, the insulation can be improved, and current leakage and short-circuiting can be prevented and integration with higher photoelectric conversion efficiency can be achieved. A solar cell can be obtained.
Further, since the conductive groove 23 is filled with the conductive material 40 having a lower resistance than that of the transparent electrode layer material, that is, a high conductivity, there is little electrical loss at the connection portion.

“Fourth Embodiment”
FIG. 10A is a schematic perspective view showing the main part of the integrated solar cell 4 manufactured by the manufacturing method of the fourth embodiment, and is a perspective view of a broken line part II in the plan view of FIG. FIG. 10B is a schematic perspective view of a position corresponding to FIG. 10A for the integrated solar cell 4 ′ of the design modification example of the present embodiment.

  As shown in FIG. 10A, the integrated solar cell 4 includes a cell in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Adjacent to each other via the connection area 50 and connected in series in the connection area 50.

  In the connection portion region 50, the adjacent back surface electrode layers 12 are separated from each other by a plurality of electrode layer separation grooves 21 provided at predetermined intervals in the longitudinal direction L of the substrate 10. The electrode layer separation groove 21 is a groove reaching the surface of the substrate 10 (insulating layer 10a), and its width is, for example, 10 μm. The photoelectric conversion layer 13 is embedded in the electrode layer separation groove 21. Adjacent cells are separated from each other by an opening groove 52 provided in the connection region 50 and an element isolation groove 54 provided at one end thereof.

  The opening groove 52 has a depth from the buffer layer 14 to the surface position of the back electrode layer 12, and the groove width is, for example, about 50 to 100 μm. The opening groove portion 52 is arranged and formed substantially parallel to the electrode layer separation groove 21 so that the electrode layer separation groove 21 is located in the vicinity of one wall surface α thereof. In the present embodiment, the photoelectric conversion layer embedded in the electrode layer separation groove 21 is disposed on the bottom surface of the opening groove 52 so that the opening groove 52 partially overlaps the wall surface α or the wall surface α. You may be located in the cell 20a side to have. However, the back electrode is not exposed in the opening groove 52 in order to prevent a short circuit in the cell 20a on the one wall surface α side.

  The opening groove 52 is formed with a conductive portion 42 that covers one wall surface α and gradually decreases in the groove width direction. By the conductive portion 42 formed in the opening groove 52, an adjacent cell (here) Then, the transparent electrode layer 16 of one cell (here, cell 20a) of the cells 20a and 20b and the back electrode layer 12 of the other cell (here, cell 20b) are electrically connected in series. In addition, the conductive portion 42 is made of a material having a lower resistance than the transparent electrode layer material as its constituent material, and electrical loss at the connection portion connected in series can be kept low.

  The buffer layer 14 and the conductive portion 42 are covered with the transparent electrode layer 16, and an element isolation groove 54 having a depth from the transparent electrode layer 16 to the back electrode surface is formed at the other wall β side end of the opening groove 52. Is formed. The width of the element isolation groove 54 is, for example, about 10 to 30 μm.

  Note that an insulating material 34 may be embedded in the element isolation groove 54 of the above-described integrated solar cell 4 as in the integrated solar cell 4 ′ shown in FIG. 10B as a design modification example of this embodiment. By filling the element isolation groove 54 with the insulating material 34, current leakage in the photoelectric conversion layer of the cell 20b and a short circuit between the cells can be effectively suppressed.

  In this embodiment, as shown in part of FIG. 10A, the conductive portion 42 is formed over the entire width direction W of the substrate 10 in the connection portion region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

  Below, the manufacturing method of 4th Embodiment is demonstrated based on FIGS. 11 and 12 are schematic cross-sectional views illustrating the manufacturing process of the fourth embodiment, and FIG. 13 is a schematic cross-sectional view illustrating the manufacturing process of the partial design change example of the present embodiment. The main part of the integrated structure including the connection region 50 is shown.

  First, a substrate 10 having a predetermined size with at least a surface being insulative is prepared. For example, the board | substrate 10 provided with the insulating layer 10a on the metal base material surface is used.

  As shown to a of FIG. 11, the back surface electrode layer 12 is formed in the surface of the board | substrate 10, the electrode layer isolation | separation groove | channel 21 which the surface of the board | substrate 10 exposes to the bottom part is formed in the back surface electrode layer 12, and the back surface electrode layer 12 is formed. Separate into multiple areas. The electrode layer separation groove 21 is preferably formed by laser scribing.

  In the present embodiment, since the electrode layer separation groove 21 is formed before the back electrode layer 12 receives the thermal history when the photoelectric conversion layer or the like is formed, the back electrode layer is made of a material that is cured by a thermal history such as Mo. Even in this case, scribing can be performed with relatively low power. After the back electrode layer is cured, a relatively high power is required, so that an expensive laser scribing device is required. Further, when a relatively large power is used, the substrate may be damaged. Usually, cleaning is performed after the scribing process, but when the electrode layer separation groove is scribed after laminating up to the transparent electrode layer, burrs and dust generated during the scribe formation cannot be removed sufficiently, and the quality of the apparatus is deteriorated. There is a fear. According to the manufacturing method of this embodiment, these problems do not occur, and an integrated solar cell with good quality can be manufactured at low cost.

  Next, as illustrated in FIG. 11 b, the photoelectric conversion layer 13 and the buffer layer 14 are sequentially stacked so as to cover the surface of the substrate 10 exposed at the bottoms of the back electrode layer 12 and the electrode layer separation groove 21.

  After that, as shown in FIG. 11 c, an opening groove 52 having a width that is substantially parallel to the electrode layer separation groove 21 and exposes the back electrode layer 12 from the laminated surface side is formed. The opening groove 52 is preferably formed by a mechanical scribing method. In this step, the opening groove 52 is formed so that the electrode layer separation groove 21 is located in the vicinity of one wall surface α thereof. On the bottom surface of the opening groove 52 formed here, the back electrode layer 12 continuous to the photoelectric conversion layer embedded in the electrode layer separation groove 21 and the cell 20b on the wall surface β side is exposed.

  Next, as shown in FIG. 11 d, a conductive material is applied and cured so as to cover one wall surface α of the opening groove 52, thereby forming a conductive portion 42. For example, a photocurable or thermosetting conductive ink may be used as the conductive material, the conductive ink may be deposited near the wall surface α by an ink jet method, and cured by light irradiation or heating according to the ink.

  Next, the transparent electrode layer 16 is formed over the entire surface. As a result, the transparent electrode layer 16 is formed on the buffer layer 14, the conductive portion 42 is covered, and the transparent conductive layer material is filled in the opening groove 52. Thereafter, as shown in FIG. 12e, an element isolation groove 54 for separating the transparent electrode layer 16 from one element to another is formed. At this time, the element isolation groove 54 having a depth exposing the back electrode layer 12 from the surface of the transparent electrode layer 16 is formed at a position closer to the other cell 20b than the conductive portion 42. Thereby, the short circuit between both cells can be prevented. In the present embodiment, the element isolation groove 54 is further formed in a region including or adjacent to the other wall surface β of the opening groove portion 52 so that the wall surface of the other cell 20b is not covered with the transparent conductive layer material. . By forming the element isolation groove 54 in this way, it is possible to prevent the generated current from leaking in the other cell 20b and to improve the power generation efficiency.

  As described above, the integrated solar cell 4 shown in FIG. 10A can be manufactured.

  As shown by e ′ in FIG. 13, an element isolation groove 54 ′ may be formed outside the opening groove 52 and in a portion closer to the cell 20 b than the other wall surface β.

  Further, as shown in f of FIG. 12 and f ′ of FIG. 13, the insulating material 34 may be embedded in the element isolation grooves 54 and 54 ′. As shown in FIG. 12 f, the integrated solar cell 4 ′ shown in FIG. 10B can be manufactured by filling the element isolation groove 54 with the insulating material 34. Thus, by filling the element isolation groove 54 with the insulating material 34, a short circuit between cells can be prevented more effectively.

“Fifth Embodiment”
FIG. 14A is a schematic perspective view showing a main part of the integrated solar cell 5 manufactured by the manufacturing method of the fifth embodiment, and is a perspective view of a broken line part II in the plan view of FIG. FIG. 14B is a schematic perspective view of a position corresponding to FIG. 14A for the integrated solar cell 5 ′ of the design modification example of the present embodiment.

  As shown in FIG. 14A, the integrated solar cell 5 has a cell in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Adjacent to each other via the connection area 50 and connected in series in the connection area 50.

  In the connection portion region 50, the back electrode layer 12 is separated from the adjacent back electrode layer 12 by a plurality of electrode layer separation grooves 21 provided at a predetermined interval in the longitudinal direction L of the substrate 10. The electrode layer separation groove 21 is a groove reaching the surface of the substrate 10 (insulating layer 10a), and its width is, for example, 10 μm. The photoelectric conversion layer 13 is embedded in the separation groove 21.

  Further, the connection region 50 has a depth from the buffer layer 14 to the surface of the back electrode layer in order from one cell 20a adjacent to the other through the connection region 50 toward the other cell 20b. 1 groove 55a, a second groove 55b parallel to the first groove 55a, and a depth at which the back electrode layer 12 formed at the end of the second groove 55b on the other cell 20b side is exposed to the bottom surface. An element isolation groove 56 is formed.

  The first groove 55a and the second groove 55b are stopper portions that will be described later with a part of the laminate between the grooves 55a and 55b after the back electrode layer 12 to the buffer layer 14 are formed on the substrate 10. 33 are formed substantially in parallel at predetermined intervals so as to remain as 33.

  The first groove 55a is formed with a conductive portion 42 so as to cover one wall surface α of the first groove 55a. The conductive portion 42 is regulated by the stopper portion 33 so as not to spread toward the first groove 55b. Is formed. A portion of the second groove 55b adjacent to the stopper portion 33 is filled with a transparent conductive material, and an element isolation groove 56 is provided on the other cell 20b side.

  The conductive portion 42 allows the transparent electrode layer 16 of one cell (here, cell 20a) of adjacent cells (here, cells 20a and 20b) and the back electrode layer 12 of the other cell (here, cell 20b) to be connected. They are electrically connected in series, and the element isolation groove 56 prevents a short circuit between the cells. In addition, the conductive portion 42 is made of a material having a lower resistance than the transparent electrode layer material as its constituent material, and electrical loss at the connection portion connected in series can be kept low.

  14B, an insulating material 34 may be embedded in the element isolation groove 56 of the integrated solar cell 5 as an integrated solar cell 5 'shown as a design modification example of the present embodiment. Filling the element isolation trench 56 with the insulating material 34 is preferable because the effect of suppressing the short circuit between the cells and the current leakage in the cell 20b becomes higher.

  In this embodiment, as shown in part of FIG. 14A, the conductive portion 42 is formed across the entire width direction W of the substrate 10 in the connection portion region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

  Below, the manufacturing method of 5th Embodiment is demonstrated based on FIGS. FIGS. 15 and 16 are schematic cross-sectional views showing the manufacturing process of the fifth embodiment, and FIG. 17 is a schematic cross-sectional view showing the manufacturing process of the partial design modification example of the present embodiment. The main part of the integrated structure including the connection region 50 is shown.

  First, a substrate 10 having a predetermined size with at least a surface being insulative is prepared. For example, the board | substrate 10 provided with the insulating layer 10a on the metal base material surface is used.

  As shown in FIG. 15 a, the back electrode layer 12 is formed on the surface of the substrate 10, the electrode layer separation groove 21 in which the surface of the substrate 10 is exposed at the bottom is formed in the back electrode layer 12, and the back electrode layer 12 is formed. Separate into multiple areas. The electrode layer separation groove 21 is preferably formed by laser scribing.

  In the present embodiment, since the electrode layer separation groove 21 is formed before the back electrode layer 12 receives the thermal history when the photoelectric conversion layer or the like is formed, the back electrode layer is made of a material that is cured by a thermal history such as Mo. Even in this case, scribing can be performed with relatively low power. After the back electrode layer is cured, a relatively high power is required, so that an expensive laser scribing device is required. Further, when a relatively large power is used, the substrate may be damaged. Usually, cleaning is performed after the scribing process, but when the electrode layer separation groove is scribed after laminating up to the transparent electrode layer, burrs and dust generated during the scribe formation cannot be removed sufficiently, and the quality of the apparatus is deteriorated. There is a fear. According to the manufacturing method of this embodiment, these problems do not occur, and an integrated solar cell with good quality can be manufactured at low cost.

  Next, as illustrated in FIG. 15 b, the photoelectric conversion layer 13 and the buffer layer 14 are sequentially stacked so as to cover the surface of the substrate 10 exposed at the bottoms of the back electrode layer 12 and the electrode layer separation groove 21.

  Next, as shown in FIG. 15 c, an opening groove 55 having a depth parallel to the electrode layer separation groove 21 and reaching the surface position of the back electrode layer 12 is formed. At this time, the opening groove portion 55 is formed so as to leave a part 33 of the laminated body at a position separated from both the walls α and β of the opening groove portion 55 in the groove width direction of the opening groove portion 55. For example, by forming the first and second grooves 55a and 55b having a depth reaching the surface position of the back electrode layer 12 from above the stacked body at a predetermined interval at a desired opening groove forming position by laser or mechanical scribing. The open groove 55 in which a part 33 of the laminate is left between the two grooves 55a and 55b can be formed. Note that the back electrode layer 12 is exposed in the first and second grooves 55a and 55b sandwiching the part 33 of the laminated body of the formed opening groove 55, and is partially embedded in the electrode layer separation groove 21. The exposed photoelectric conversion layer 13 is exposed. Here, the opening groove portion forming position is controlled so that the back electrode layer 12 of the cell 20 a having one wall surface α of the opening groove portion 55 is not exposed to the opening groove portion 55.

  In the present embodiment, the photoelectric conversion layer 13 is left as a part 33 of the stacked body in the opening groove 55. The part 33 includes the buffer layer 14 and the transparent electrode layer. 16 may remain.

Next, as shown in FIG. 15d, a conductive part 42 is formed by applying and curing a conductive material so as to cover one wall surface α. For example, conductive ink is used as the conductive material, and the ink is ejected from the one wall surface α to the back electrode layer 12 exposed in the first groove 55a by an inkjet method. In this case, since the conductive ink is ejected into the first groove 55a, the conductive ink is blocked by the stopper portion 33 and is prevented from spreading toward the second groove 55b. That is, the stopper portion 33 prevents the conductive ink from coming into contact with the other wall surface β. Further, since the back electrode layer 12 of one cell 20a is not exposed in the first groove 55a, a short circuit between the adjacent cells 20a and 20b is prevented.
After the conductive ink is ejected, the conductive portion 42 is formed by performing a thermosetting process and a photocuring process according to the conductive ink.

  Next, the transparent electrode layer 16 is formed on the entire surface of the buffer layer 14 and the surface of the conductive portion 42 so as to fill the opening groove 55. Then, as shown in FIG. 16e, an element isolation groove 56 for separating the transparent electrode layer 16 from one element to another is formed. At this time, an element isolation groove 56 having a depth exposing the back electrode layer 12 from the surface of the transparent electrode layer 16 is formed at a position closer to the other cell 20b than the stopper portion 33 is. Thereby, the short circuit between both cells can be prevented. In the present embodiment, the element isolation groove 56 is further formed in a region including the other wall surface β of the opening groove portion 55 so that the wall surface of the other cell 20b is not covered with the transparent conductive layer material. By forming the element isolation groove 56 in this way, it is possible to prevent the generated current from leaking in the other cell 20b and to improve the power generation efficiency. The element isolation groove 56 is preferably formed by a mechanical scribe method.

  As described above, the integrated solar cell 5 shown in FIG. 14A can be manufactured.

  Note that the element isolation groove 56 may be formed closer to the cell 20b than the other wall surface β outside the opening groove portion 55, as shown by e 'in FIG.

  Further, as shown by f in FIG. 16 and f ′ in FIG. 17, the insulating material 34 may be embedded in the element isolation grooves 56 and 56 ′. As shown in FIG. 16 f, the integrated solar cell 5 ′ shown in FIG. 14B can be manufactured by filling the element isolation trench 56 with the insulating material 34. Thus, by filling the element isolation trench 56 with the insulating material 34, a short circuit between cells can be prevented more effectively.

“Sixth Embodiment”
FIG. 18 is a schematic perspective view showing a main part of the integrated solar cell 6 manufactured by the manufacturing method of the sixth embodiment, and is a perspective view of a broken line part II in the plan view of FIG.

  As shown in FIG. 18, the integrated solar cell 6 includes a cell in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Adjacent to each other via the connection area 50 and connected in series in the connection area 50.

In the connection region 50, the depth from the buffer layer 14 through the back electrode layer 12 to the substrate surface in order from one cell (here, cell 20a) to the other cell (here, cell 20b). The first element isolation groove 122, the conduction groove 123 having a depth from the buffer layer 14 to the surface of the back electrode layer 12, and the second element having a depth from the transparent electrode layer 16 to the surface position of the back electrode layer 12. A separation groove 124 is provided. The width of each groove is, for example, about 10 μm.
The first element isolation groove 122 and the second element isolation groove 124 are filled with the insulating materials 30 and 34, and the conduction groove 123 is filled with the conductive material 40.

  The cells are separated by the first and second element isolation grooves 122 and 124 filled with the insulating materials 30 and 34, and the connecting portion region 50 is sandwiched between the conductive materials 40 filled in the conduction grooves 123. The transparent electrode layer 16 of one adjacent cell 20a and the back electrode layer 12 of the other cell 20b are electrically connected.

  Since the first element isolation groove 122 is provided and the insulating material 30 is further filled, current leakage in the photoelectric conversion layer of one cell 20a can be prevented, and the second element isolation groove Since 124 is provided and the insulating material 34 is further filled, current leakage in the photoelectric conversion layer of the other cell 20b can be prevented. Photoelectric conversion efficiency can be improved because the wall of each cell is insulated and leakage is prevented. Further, the element isolation grooves 122 and 124 filled with these insulating materials 30 and 34 can effectively prevent a short circuit between the cells 20a and 20b. Further, the conductive material 40 is made of a material having a resistance lower than that of the transparent electrode layer material, and electrical loss at the connecting portion in series connection can be kept low.

  In the present embodiment, as shown in part of FIG. 18, the conduction groove 123 is formed across the entire width direction W of the substrate 10 in the connection region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

  Below, the manufacturing method of 6th Embodiment is demonstrated based on FIG. 19, FIG. FIGS. 19 and 20 are schematic cross-sectional views showing the manufacturing process of the sixth embodiment, and show the main part of the integrated structure including the partial cells 20a and 20b and the connection region 50 therebetween.

  First, a substrate 10 having a predetermined size with at least a surface being insulative is prepared. For example, the board | substrate 10 provided with the insulating layer 10a on the metal base material surface is used.

As shown in FIG. 19 a, the back electrode layer 12, the photoelectric conversion layer 13, and the buffer layer 14 are sequentially stacked on the surface of the substrate 10.
Thus, in this embodiment, since a scribe process is unnecessary during the lamination | stacking process of the back surface electrode layer 12 to the buffer layer 14, production efficiency can be improved, without complicating a manufacturing process.

  Next, as shown in FIG. 19B, a first element isolation groove 122 having a depth at which the substrate surface is exposed from the laminated surface side and a conductive groove 123 having a depth at which the back electrode layer 12 is exposed from the laminated surface side. Form. It is preferable to use a mechanical scribe method and a laser scribe method for forming the first element isolation groove 122. Specifically, it is preferable to scribe from the laminated surface side to the back electrode surface by a mechanical scribe method, and then scribe the back electrode layer by a laser scribe method. Further, it is preferable to use a mechanical scribing method for forming the conductive groove 123.

  Thereafter, as shown in FIG. 19 c, the first element isolation groove 122 is filled with an insulating ink (insulating material) 30. Further, the conductive ink (conductive material) 40 is injected and filled into the conductive groove 123.

  Next, as shown in FIG. 20 d, the entire surface including the buffer layer 14, the insulating material 30 filled in the first element isolation groove 122, and the conductive material 40 filled in the conduction groove 123 is covered. The transparent electrode layer 16 is formed so as to cover it.

  Further, as shown in FIG. 20e, a second element isolation groove 124 is formed closer to the cell 20b than the conducting groove 123, and as shown in FIG. 20f, the second element isolation groove 124 is insulated. Ink (insulating material) 34 is injected and filled.

  As described above, the integrated solar cell 6 shown in FIG. 18 can be manufactured.

Although it has a cell isolation function even if an insulating material is not put in the second element isolation groove 124, a residue generated when the transparent conductive layer is scribed is formed in the second element isolation groove 124 when the second element isolation groove 124 is formed. If it is inside, current insulation in the cell 20b or a short circuit between the cells may occur, and the insulation is not necessarily sufficient. However, by filling the second element isolation groove 124 with the insulating material 134 as in the present embodiment, the insulating property can be improved, and current leakage and short circuit can be prevented and integration with higher photoelectric conversion efficiency can be achieved. A solar cell can be obtained.
Further, since the conductive groove 123 is filled with the conductive material 40 having a resistance lower than that of the transparent electrode layer material, there is little electrical loss at the connection portion, and a further improvement effect of the photoelectric conversion efficiency can be obtained.

“Seventh Embodiment”
FIG. 21A is a schematic perspective view showing a main part of the integrated solar cell 7 manufactured by the manufacturing method of the seventh embodiment, and is a perspective view of a broken line part II in the plan view of FIG. FIG. 21B is a schematic perspective view of a position corresponding to FIG. 21A for the integrated solar cell 7 of the design modification example of the present embodiment.

  As shown in FIG. 21A, the integrated solar cell 7 has a cell in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Adjacent to each other via the connection area 50 and connected in series in the connection area 50.

  In the connection portion region, a line-shaped slightly wide opening groove portion 152 provided between the cells and an element isolation groove 154 parallel to the opening groove portion 152 are provided, and the bottom surface of the opening groove portion 152 on the one wall surface α side. An electrode layer separation groove 151 that separates the back electrode layer between cells is provided in a part of the electrode. The electrode layer separation groove 151 has a depth reaching the surface of the substrate, and is disposed substantially in parallel with the opening groove 152. The groove width is, for example, about 10 μm.

The opening groove 152 has a depth reaching the surface position of the back electrode layer 12, and the groove width is, for example, about 50 to 100 μm.
The opening groove 152 is formed with an insulating portion 130 that covers one wall surface α and gradually decreases in the groove width direction. Furthermore, a conductive layer 140 is formed so as to cover the insulating portion 130, and the buffer layer 14 and the conductive layer 140 are covered with the transparent electrode layer 16. By the conductive layer 140, the transparent electrode layer 16 of one cell (here, cell 20a) of the adjacent cells (here, cells 20a and 20b) and the back electrode layer 12 of the other cell (here, cell 20b) are formed. Electrically connected in series. The conductive layer 140 is formed by the insulating portion 130 so as to contact the transparent electrode layer 16 on the cell side having the wall surface α without contacting the wall surface α. Since the conductive layer 140 does not contact the wall surface α, generation of internal leakage current of the cell 20a having the wall surface is prevented. In addition, the conductive layer 140 is made of a material having a lower resistance than the transparent electrode layer material, and the loss at the connecting portion in series connection can be kept low.

  The element isolation groove 154 is formed on the other cell 20b side of the opening groove 152, and separates the transparent electrode layer 16 between adjacent cells. The width of the element isolation groove 154 is, for example, about 10 μm.

  Note that an insulating material 34 may be embedded in the element isolation groove 154 of the integrated solar cell 7 as in the integrated solar cell 7 ′ shown in FIG. 21B as a design modification example of this embodiment. By filling the element isolation groove 54 with the insulating material 34, current leakage in the photoelectric conversion layer of the cell 20b and a short circuit between the cells can be effectively suppressed.

  In this embodiment, as shown in part of FIG. 21A, the conductive layer 140 is formed over the entire width direction W of the substrate 10 in the connection region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

  Below, the manufacturing method of 7th Embodiment is demonstrated based on FIGS. 22 to 24 are schematic cross-sectional views illustrating the manufacturing process of the seventh embodiment, and FIG. 25 is a schematic cross-sectional view illustrating the manufacturing process of the partial design change example of the present embodiment. The main part of the integrated structure including the connection region 50 is shown.

  First, a substrate 10 having a predetermined size with at least a surface being insulative is prepared. For example, the board | substrate 10 provided with the insulating layer 10a on the metal base material surface is used.

As shown in FIG. 22 a, the back electrode layer 12, the photoelectric conversion layer 13, and the buffer layer 14 are sequentially stacked on the surface of the substrate 10.
Thus, in this embodiment, since a scribe process is unnecessary during the lamination | stacking process of the back surface electrode layer 12 to the buffer layer 14, production efficiency can be improved, without complicating a manufacturing process.

  Next, as shown in FIG. 22b, an opening groove 152 having a slightly wider depth from which the back electrode surface is exposed from the laminated surface side is formed. It is preferable to use a mechanical scribing method for forming the opening groove 152.

  Further, as shown in FIG. 22c, an electrode layer separation groove 151 for separating the back electrode layer 12 between cells is formed in a part of the back electrode layer 12 exposed on the bottom surface of the opening groove 152. At this time, the electrode layer separation groove 151 is formed near one cell (here, the cell 20a) of the adjacent cells across the opening groove 152. The electrode layer separation groove 151 is preferably formed by a laser scribing method.

  Next, as shown in d of FIG. 23, an insulating material is applied and cured so as to cover one wall surface α of the opening groove portion 152 and to fill the electrode layer separation groove 151, thereby forming the insulating portion 130. For example, if a photo-curing or thermosetting insulating ink is used as the insulating material and the insulating ink is deposited near the wall surface α by the ink jet method, the ink covers the wall surface α and the other wall surface in the groove width direction. Spread to the β side. Thereafter, curing may be performed by light irradiation or heating according to the ink. Although the size of the insulating portion can be adjusted by adjusting the width of the opening groove portion 152 and the ink discharge amount, the insulating portion 130 and the other wall surface β need to be separated to some extent.

  Next, as shown in FIG. 23e, the cell 20a having the wall surface α covered with the insulating portion 130 passes from the buffer layer 14 to the back surface electrode layer 12 exposed on the bottom surface of the opening groove 152 through the insulating portion 30. The conductive layer 140 is formed by applying a conductive material to the area and curing it. For example, if a photo-curing type or thermosetting type conductive ink is used as the conductive material, and droplets are applied to the area covering the insulating part 130 from the upper position of the wall surface α by the ink-jet method, then it is cured by light irradiation or heating. Good.

Thereafter, as shown in FIG. 24 f, the transparent electrode layer 16 is formed over the entire surface so as to embed the opening groove 152 on the buffer layer 14, the conductive layer 140, and then the wall surface β of the opening groove 152. An element isolation groove 154 having a depth from the transparent electrode layer 16 to the surface of the back electrode layer is formed on the side. The element isolation groove 154 is preferably formed by a mechanical scribing method, and it may be possible to form a groove having a depth for separating only the transparent electrode layer 16, but the buffer layer 14 and the photoelectric conversion layer 13 are also formed. By separating, internal leakage of the other cell 20b can be prevented. Further, even when the conductive material spreads until it contacts the other wall surface β in the conductive layer 140 forming step, the element isolation groove 154 is formed at a depth to the back electrode surface, so that between the cells. Can be prevented.
Moreover, since the conductive layer 140 is formed of a material having a lower resistance than that of the transparent electrode layer 16, electrical loss can be suppressed by providing the conductive layer 140 at the connection portion.

  As described above, the integrated solar cell 7 shown in FIG. 21A can be manufactured.

As shown in f ′ of FIG. 25, the element isolation groove 154 ′ may be formed in a region including the other wall surface β of the opening groove 152.
Furthermore, as shown in g of FIG. 24 and g ′ of FIG. 25, the insulating material 34 may be embedded in the element isolation grooves 154 and 154 ′. By filling the element isolation groove 154 with the insulating material 34, a short circuit between cells can be more effectively prevented.

“Eighth Embodiment”
FIG. 26A is a schematic perspective view showing a main part of the integrated solar cell 8 manufactured by the manufacturing method of the eighth embodiment, and is a perspective view of a broken line part II in the plan view of FIG. FIG. 26B is a schematic perspective view of a position corresponding to FIG. 26A for the integrated solar cell 8 ′ of the design change example of the present embodiment.

  As shown in FIG. 26A, the integrated solar cell 8 includes a plurality of layers in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Are adjacent to each other through the connection region 50 and are connected in series in the connection region 50.

  In the connection part region 50, an electrode layer separation groove 151 penetrating the back electrode layer 12 is formed in a part of the bottom surface in order from one cell 20 a side adjacent to the connection part region 50 toward the other cell 20 b side. The first groove 155a, the second groove 155b having a depth that exposes the back electrode layer 12 parallel to the first groove 155a, and the end of the second groove 155b on the other cell 20b side. An element isolation groove 156 having a depth that exposes the back electrode layer 12 formed on the bottom surface is formed.

The first groove 155a and the second groove 155b are stopper portions which will be described later with a part of the laminate between the grooves 155a and 155b after the back electrode layer 12 to the buffer layer 14 are formed on the substrate 10. 33 are formed substantially in parallel at predetermined intervals so as to remain as 33.
An insulating part 130 is formed in the first groove 155a so as to cover one wall surface α, and the insulating part 130 is formed by being restricted by the stopper part 33 so as not to spread toward the second groove 155b. ing. A transparent conductive material is embedded in a portion adjacent to the stopper portion 33 of the second groove 155b, and an element isolation groove 156 is provided on the other cell 20b side.

  In the present embodiment, the transparent electrode layer 16 of one cell (here, the cell 20a) of the adjacent cells (here, the cells 20a and 20b) by a transparent conductive material embedded in a portion adjacent to the stopper portion 33, A connecting portion 141 that electrically connects the back electrode layer 12 of the other cell (here, the cell 20b) is configured. The element isolation groove 156 prevents a short circuit between cells.

  Note that an insulating material 34 may be embedded in the element isolation groove 156 of the integrated solar cell 8 as in the integrated solar cell 8 ′ shown in FIG. 26B as a design modification example of the present embodiment. Filling the element isolation groove 156 with the insulating material 34 is preferable because the effect of suppressing the short circuit between the cells and the current leakage in the cell 20b becomes higher.

  In the present embodiment, as shown in part of FIG. 26A, the connection portion 141 is formed across the entire width direction W of the substrate 10 in the connection portion region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

  Below, the manufacturing method of 8th Embodiment is demonstrated based on FIGS. 27 and 28 are schematic cross-sectional views showing the manufacturing process of the eighth embodiment, and FIG. 29 is a schematic cross-sectional view showing the manufacturing process of the partial design change example of the present embodiment, with the partial cells 20a and 20b and between them, respectively. The main part of the integrated structure including the connection region 50 is shown.

As shown in FIG. 27 a, the back electrode layer 12, the photoelectric conversion layer 13, and the buffer layer 14 are sequentially stacked on the surface of the substrate 10.
Thus, in this embodiment, since a scribe process is unnecessary during the lamination | stacking process of the back surface electrode layer 12 to the buffer layer 14, production efficiency can be improved, without complicating a manufacturing process.

Next, as shown in FIG. 27 b, an opening groove 155 having a depth reaching the surface position of the back electrode layer 12 is formed. At this time, the opening groove portion 155 is formed so as to leave a part 33 of the laminate at a position spaced from both walls α and β of the opening groove portion 155 in the groove width direction of the opening groove portion 155. For example, by forming the first and second grooves 155a and 155b having a depth reaching the surface position of the back electrode layer 12 at a predetermined interval from above the stacked body at a desired opening groove forming position by laser or mechanical scribing. The open groove 155 in which a part 33 of the laminate is left between the two grooves 155a and 155b can be formed. Note that the back electrode layer 12 is exposed in the first and second grooves 155a and 155b that sandwich the part 33 of the stacked body of the formed opening groove portions 155.
In the present embodiment, the photoelectric conversion layer 13 is left as a part 33 of the stacked body in the opening groove 55. The part 33 includes the buffer layer 14 and the transparent electrode layer. 16 may remain.

An electrode layer separation groove 151 for separating the electrode layer 12 between cells is formed in the back electrode layer 12 exposed on the bottom surface of the first groove 155a. The electrode layer separation groove 151 is preferably formed by laser scribing. Then, as shown in FIG. 27 c, an insulating material 130 is formed by applying and curing an insulating material so as to cover one wall surface α. For example, an insulating ink is used as an insulating material, and ink is ejected in the vicinity of one wall surface α by an inkjet method. In this case, since the insulating ink is ejected into the first groove 55a, the insulating ink is blocked by the stopper 33 and is prevented from spreading toward the second groove 155b.
After the insulating ink is deposited, the insulating portion 130 is formed by performing a thermosetting process and a photocuring process according to the ink.

  Next, the transparent electrode layer 16 is formed on the buffer layer 14 and the entire surface including the opening groove 155. At this time, the insulating portion 130 is covered with the transparent electrode layer 16, and the second groove 155b is filled with the transparent conductive layer material. Then, as shown in FIG. 28 d, the element isolation groove 156 is formed in a partial region including the other wall surface β of the opening groove portion 155. The element isolation groove 156 is preferably formed by a mechanical scribe method.

  As described above, the integrated solar cell 8 shown in FIG. 26A can be manufactured.

  Note that the element isolation groove 156 may be formed closer to the cell 20b than the other wall surface β outside the opening groove portion 55, as shown by d 'in FIG.

  Further, as shown in e of FIG. 28 and e ′ of FIG. 29, an insulating material 34 may be embedded in the element isolation grooves 156 and 156 ′. As shown in e of FIG. 28, the integrated solar cell 8 ′ shown in FIG. 26B can be manufactured by filling the element isolation groove 156 with the insulating material 34. Thus, by filling the element isolation groove 156 with the insulating material 34, a short circuit between cells can be more effectively prevented.

“Ninth Embodiment”
FIG. 30A is a schematic perspective view showing a main part of the integrated solar cell 9 manufactured by the manufacturing method of the ninth embodiment, and is a perspective view of a broken line part II in the plan view of FIG. FIG. 30B is a schematic perspective view of a position corresponding to FIG. 30A for the integrated solar cell 9 ′ of the design change example of the present embodiment.

  As shown in FIG. 30A, the integrated solar cell 9 has a plurality of layers in which a back electrode layer 12, a photoelectric conversion layer 13, a buffer layer 14, and a transparent electrode layer 16 are sequentially stacked on a substrate 10 whose surface layer is an insulating layer 10 a. Are adjacent to each other through the connection region 50 and are connected in series in the connection region 50.

  In the connection part region 50, an electrode layer separation groove 151 penetrating the back electrode layer 12 is formed in a part of the bottom surface in order from one cell 20 a side adjacent to the connection part region 50 toward the other cell 20 b side. And a device isolation groove 156 having a depth exposing the back electrode layer 12 parallel to the first groove 155a.

A part of the stacked body is left as a stopper portion 33 described later between the first groove 155a and the element isolation groove 156.
An insulating part 130 is formed in the first groove 155a so as to cover one wall surface α, and a conductive layer 140 is further formed so as to cover the insulating part 130. The insulating portion 130 and the conductive layer 140 are formed by being restricted by the stopper portion 33 so as not to spread toward the element isolation groove 156 side.

  In the present embodiment, the transparent electrode layer 16 of one cell (here, cell 20a) of the cells (here, cells 20a and 20b) adjacent to each other by the conductive layer 140 and the back surface of the other cell (here, cell 20b). The electrode layer 12 is electrically connected. The element isolation groove 156 prevents a short circuit between cells.

  Note that an insulating material 34 may be embedded in the element isolation groove 156 of the above-described integrated solar cell 9 as in the integrated solar cell 9 ′ shown in FIG. 30B as a design modification example of this embodiment. Filling the element isolation groove 156 with the insulating material 34 is preferable because the effect of suppressing the short circuit between the cells and the current leakage in the cell 20b becomes higher.

  In this embodiment, as shown in part of FIG. 30A, the conductive layer 140 is formed over the entire width direction W of the substrate 10 in the connection region 50. However, in the connection region 50, the cells need only be electrically connected in series, and the conduction groove does not necessarily have to be formed across the entire width direction W of the substrate 10. In order to electrically connect cells in series, it is sufficient that a conductive portion is formed at least in part in the cell length direction (substrate width direction W). In the width direction W), for example, conductive portions may be intermittently provided at about three places.

Below, the manufacturing method of 9th Embodiment is demonstrated based on FIG.27, FIG31 and FIG32. 27 and 31 are schematic cross-sectional views showing the manufacturing process of the ninth embodiment, and FIG. 32 is a schematic cross-sectional view showing the manufacturing process of the partial design change example of the present embodiment, where the partial cells 20a and 20b are respectively shown. The main part of the integrated structure including the connection region 50 between them is shown.
The manufacturing method of the ninth embodiment is the same as the manufacturing method of the eighth embodiment for steps a and b shown in FIG. 27, and the description of the manufacturing method of the eighth embodiment is incorporated. Here, the manufacturing process after c in FIG. 31 will be described.

  After steps a and b in FIG. 27, as shown in FIG. 31 c, an insulating material is applied and cured so as to cover one wall surface α to form the insulating portion 130, and further to cover the insulating portion 130. The conductive layer 140 is formed by applying and curing a conductive material. For example, the insulating part 130 is formed by using an insulating ink as an insulating material, ejecting ink near one wall surface α by an ink jet method, and performing a thermosetting process or a photocuring process according to the ink. . Similarly, the conductive layer 140 is formed by using conductive ink as a conductive material, ejecting ink onto the insulating portion 130 by an ink jet method, and performing heat curing treatment and photocuring treatment according to the ink. . At this time, the ink spreads but is blocked by the stopper portion 33 and is regulated so as not to spread toward the second groove 155b.

  Next, the transparent electrode layer 16 is formed on the buffer layer 14 and the entire surface including the opening groove 155. At this time, the conductive layer 140 is covered with the transparent electrode layer 16, and the second groove 155b is filled with the transparent conductive layer material. Then, as shown in FIG. 31d, an element isolation groove 156 is formed in a portion substantially coinciding with the second groove 155b. The element isolation groove 156 is preferably formed by a mechanical scribe method.

  As described above, the integrated solar cell 8 shown in FIG. 30A can be manufactured.

  Note that the element isolation groove 156 may be formed closer to the cell 20b than the other wall surface β outside the opening groove 155, as shown by d 'in FIG.

  Further, as shown in e of FIG. 31 and e ′ of FIG. 32, the insulating material 34 may be embedded in the element isolation grooves 156 and 156 ′. As shown in e of FIG. 31, the integrated solar cell 9 ′ shown in FIG. 30B can be manufactured by filling the element isolation groove 156 with the insulating material 34. Thus, by filling the element isolation groove 156 with the insulating material 34, a short circuit between cells can be more effectively prevented.

  In the manufacturing method of each embodiment described above, when a flexible substrate is used as the substrate 10, it can be formed by combining a roll-to-roll method and a single wafer method. When a flexible substrate is not used as the substrate 10, all processes are performed by a single wafer method.

  In each embodiment, a laser scribe method or a mechanical scribe method can be appropriately used for forming the groove, and a scribe groove having a width of 10 to 30 μm by laser scribe and a scribe groove having a width of 30 to 100 μm by mechanical scribe are suitably used. Can be formed.

  Specific examples of the substrate and each layer suitable for each of the above embodiments will be described below.

(substrate)
The shape, size, etc. of the substrate 10 are appropriately determined according to the size of the integrated solar cell to be applied. For example, the substrate 10 has a rectangular shape or a rectangular shape with a side length exceeding 1 m. .
The substrate 10 is not particularly limited as long as the surface is an insulating layer, such as an insulating substrate such as glass or polyimide, or a metal substrate such as stainless steel having an insulating layer formed on the surface.
As the flexible substrate, an anodized substrate in which an anodized film (insulating film) mainly composed of Al ₂ O ₃ is formed on at least one surface side of an Al base material mainly composed of Al, Fe is mainly used. An anodic oxide film mainly composed of Al ₂ O ₃ was formed on at least one surface side of a composite base material in which an Al material composed mainly of Al was composited on at least one surface side of the Fe material as a component. Anodized substrate, Al ₂ O ₃ as a main component on at least one surface side of a base material on which an Al film whose main component is Al is formed on at least one surface side of an Fe material containing Fe as a main component An anodized substrate on which an anodized film is formed is preferable. Further, a soda lime glass (SLG) layer may be provided on the anodized film. By providing the soda lime glass layer, Na can be diffused in the photoelectric conversion layer. When the photoelectric conversion layer contains Na, the photoelectric conversion efficiency can be further improved.

(Back electrode layer)
The back electrode layer 12 is preferably composed of, for example, Mo, Cr, or W, and a combination thereof, and particularly preferably composed of Mo. The back electrode layer 12 may have a single-layer structure or a laminated structure such as a two-layer structure.
Moreover, the formation method in particular of the back surface electrode layer 12 is not restrict | limited, For example, it can form by vapor phase film-forming methods, such as an electron beam vapor deposition method and a sputtering method.

  The back electrode layer 12 generally has a thickness of about 800 nm, but the back electrode layer 12 preferably has a thickness of 200 nm to 1000 nm (1 μm). Thus, by making the film thickness of the back electrode layer 12 thinner than a general film, the material cost of the back electrode layer 12 can be reduced, and further, the formation speed of the back electrode layer 12 can be increased.

(Photoelectric conversion layer)
The main component of the photoelectric conversion layer 13 is not particularly limited and is preferably a compound semiconductor having at least one chalcopyrite structure because high photoelectric conversion efficiency can be obtained. The Ib group element, the IIIb group element, and the VIb group More preferably, it is at least one compound semiconductor composed of an element.

  As the main component of the photoelectric conversion layer 13, at least one type Ib group element selected from the group consisting of Cu and Ag, and at least one type IIIb group element selected from the group consisting of Al, Ga, and In, It is preferably at least one compound semiconductor comprising at least one VIb group element selected from the group consisting of S, Se, and Te.

Examples of the compound _{semiconductor, CuAlS 2, CuGaS 2, CuInS} 2, CuAlSe 2, CuGaSe 2, AgAlS 2, AgGaS 2, AgInS 2, AgAlSe 2, AgGaSe 2, AgInSe 2, AgAlTe 2, AgGaTe 2, AgInTe 2, Cu ( _{in, Al) Se 2, Cu} (in, Ga) (S, Se) 2, Cu in _{1-z in 1-x Ga} x Se 2-y S y ( wherein, 0 ≦ x ≦ 1,0 ≦ y ≦ 2, 0 ≦ z ≦ 1) (CI (G) S), Ag (In, Ga) Se ₂ , Ag (In, Ga) (S, Se) _{2 and the} like.

_{Further, Cu 2 ZnSnS 4, Cu 2} ZnSnSe 4, Cu 2 ZnSn (S, Se) 4, may be.
Semiconductors other than the I-III-VI group semiconductors include semiconductors consisting of IIIb group elements and Vb group elements such as GaAs (III-V group semiconductors), IIb group elements such as CdTe, (Cd, Zn) Te, and VIb. Examples thereof include semiconductors composed of group elements (II-VI group semiconductors).

  The method for forming the photoelectric conversion layer 13 is not particularly limited, and the photoelectric conversion layer 13 can be formed by a vacuum deposition method, a sputtering method, an MOCVD method, or the like. As film formation methods for CIGS semiconductor layers, multi-source simultaneous vapor deposition, selenization, sputtering, hybrid sputtering, canochemical process, and the like are known. Examples of other CIGS film formation methods include screen printing, proximity sublimation, MOCVD, and spray (wet film formation). Any film forming method may be used.

(Buffer layer)
The buffer layer 14 is formed to protect the photoelectric conversion layer 13 when the transparent electrode layer 16 is formed and to transmit light incident on the transparent electrode layer 16 to the photoelectric conversion layer 13.
The buffer layer 14 is made of, for example, CdS, ZnS, ZnO, ZnMgO, ZnS (O, OH), or a combination thereof.
The buffer layer 14 preferably has a thickness of 10 nm to 2 μm, and more preferably 15 to 200 nm. The buffer layer 14 is formed by, for example, a CBD (chemical bath deposition) method, a solution growth method, or the like.

(Insulating Layer (Window Layer)) As described above, in the above-described embodiment, an insulating layer (so-called window layer) may be provided between the buffer layer 14 and the transparent conductive layer 16. This insulating layer inhibits recombination of photoexcited electrons and holes, and contributes to improvement in power generation efficiency. The composition of the insulating layer is not particularly limited, but i-ZnO, i-AlZnO (AZO), and the like are preferable. The film thickness is not particularly limited, preferably 10 nm to 2 μm, and more preferably 15 to 200 nm. The film forming method is not particularly limited, but a sputtering method or an MOCVD method is suitable. On the other hand, when the buffer layer 14 is manufactured by the liquid phase method, it is also preferable to use the liquid phase method in order to simplify the manufacturing process.

(Transparent electrode layer)
The transparent electrode layer 16 can be composed of, for example, ZnO doped with Al, B, Ga, In or the like, ITO (indium tin oxide) or SnO ₂ and a combination thereof. The transparent electrode layer 16 may have a single layer structure or a laminated structure such as a two-layer structure. The thickness of the transparent electrode layer 16 is not particularly limited, and is preferably 50 nm to 2 μm, and more preferably 0.3 to 1 μm.
The method for forming the transparent electrode layer 16 is not particularly limited, and can be formed by a vapor deposition method such as an electron beam evaporation method or a sputtering method.
An antireflection film such as MgF ₂ may be formed on the transparent electrode layer 16.

(Insulating material)
Examples of the insulating material for forming the insulating portions 30 and 130 include insulating ink IJPR (solar ink), inkjet compatible polyimide ink Rixon coat (JNC), inkjet compatible UV curable ink Rixon coat (JNC), and insulating ink DPEI ( Daicel Chemical Industries) can be used. The same applies to the insulating material 34.

(Conductive material)
Examples of the conductive material constituting the conductive layer include silver paste (NPS-J (product number, manufactured by Harima Chemicals Co., Ltd.)), transparent conductive ink (ClearOhm (registered trademark) (JNC), silver nano ink (Daicel Chemical Industries), Cabot. Conductive Ink CCI-300 can be used, and the same applies to the conductive portions 42, 142, and the like.

The above has mainly described materials and layer configurations suitable for the case where a compound semiconductor is used as a photoelectric conversion layer of a solar battery cell.
The present invention may use other than the compound semiconductor system as described above as the photoelectric conversion layer of the solar battery cell. For example, as a photoelectric conversion layer, an amorphous silicon (a-Si) thin film type photoelectric conversion layer, a tandem structure type thin film photoelectric conversion layer (a-Si / a-SiGe tandem structure photoelectric conversion layer), a series connection structure (SCAF) A thin film photoelectric conversion layer (a-Si series connection structure photoelectric conversion layer), a thin film silicon thin film photoelectric conversion layer, a dye-sensitized thin film photoelectric conversion layer, or an organic thin film photoelectric conversion layer may be used. . And what is necessary is just to comprise the photovoltaic cell of the layer structure according to the kind of photoelectric converting layer.

  In the above embodiment, the first electrode layer provided on the substrate is made of an opaque material as a back electrode, and the second electrode formed on the photoelectric conversion layer is called a substrate type having a transparent structure. Although the solar cell having the structure has been described, the present invention can be applied to a super straight type solar cell in which the first electrode layer is a transparent electrode and the second electrode layer is an opaque electrode.

1, 2, 3, 4, 5, 6, 7, 8, 9 Integrated solar cell 10 Substrate 10a Insulating layer 12 Back electrode layer (first electrode layer)
13 Photoelectric conversion layer 14 Buffer layer 16 Transparent electrode layer (second electrode layer)
20a, 20b, 20c ... Solar cell (photoelectric conversion element)
21 Electrode layer isolation groove 22 First element isolation groove 23 Conductive groove 24 Second element isolation grooves 30 and 34 Insulating material 40 Conductive material 50 Connection region

Claims (17)

A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
After laminating at least the photoelectric conversion layer so as to embed the electrode layer separation groove on the first electrode layer, the first element separation groove having a depth from the laminated surface to the surface position of the first electrode layer, and the Forming a conduction groove having a depth exposing the first electrode layer from the laminated surface;
Filling the first element isolation trench with an insulating material;
Forming a second electrode layer on the laminated surface including the surface of the insulating material filled in the first element isolation groove and embedding the second electrode layer material in the conduction groove;
Forming a second element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer on a side opposite to the first element isolation groove of the conduction groove; and A method of manufacturing an integrated solar cell, comprising a step of filling the second element isolation groove with an insulating material. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
After laminating at least the photoelectric conversion layer so as to embed the electrode layer separation groove on the first electrode layer, the first element separation groove having a depth from the laminated surface to the surface position of the first electrode layer, and the Forming a conduction groove having a depth exposing the first electrode layer from the laminated surface;
Filling the first element isolation trench with an insulating material;
Filling the conductive groove with a conductive material;
Forming a second electrode layer on the laminated surface including the surfaces of the insulating material and the conductive material filled in the grooves; and exposing the first electrode layer from the surface of the second electrode layer Forming a second element isolation groove having a depth to be formed on a side opposite to the first element isolation groove of the conduction groove, and filling the second element isolation groove with an insulating material. The manufacturing method of the integrated solar cell characterized by the above-mentioned. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
Forming a conductive groove having a depth exposing the first electrode layer from the laminated surface after laminating at least the photoelectric conversion layer so as to embed the electrode layer separation groove on the first electrode layer;
Filling the conductive groove with a conductive material;
Forming a second electrode layer on the laminated surface including the surface of the conductive material filled in the conductive groove;
Forming an element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer on a side opposite to the electrode layer isolation groove of the conduction groove; and The manufacturing method of the integrated solar cell characterized by including the process of filling with an insulating material. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
Forming at least a photoelectric conversion layer so as to embed the electrode layer separation groove on the first electrode layer, and then forming an opening groove having a depth exposing the first electrode layer from the laminated surface;
Forming a conductive portion that covers one wall surface of the opening groove and is exposed to the opening groove and that contacts the first electrode layer extending toward the other wall;
Forming a second electrode layer on the laminated surface and on the surface of the conductive portion and filling the opening groove, and exposing the first electrode layer from the surface of the second electrode layer A method of manufacturing an integrated solar cell, comprising: forming an element isolation groove having a depth at an end portion on the other wall surface side of the opening groove portion or a portion on the other wall surface side outside the opening groove portion. .   The method for manufacturing an integrated solar cell according to claim 4, further comprising a step of filling the second element isolation groove with an insulating material. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
Forming a first electrode layer on a substrate having at least an insulating surface, and forming an electrode layer separation groove for separating the first electrode layer into a plurality of regions;
A laminated body is formed by laminating at least a photoelectric conversion layer so as to embed the electrode layer separation groove on the first electrode layer, and an opening groove having a depth exposing the first electrode layer from the surface of the laminated body An opening groove in which a part of the laminated body is left at a position spaced apart from both walls of the opening groove in the groove width direction of the opening groove. A step of forming the first electrode layer extending toward the other wall surface between the first and second walls so as to be at least partially exposed;
Conductive ink is dropped from the part of the laminated body onto the one wall surface side of the opening groove to cover the one wall surface, and between the one wall surface and the part of the laminated body. Forming a conductive portion in contact with the exposed first electrode layer;
Forming a second electrode layer on the surface of the laminate and on the surface of the conductive portion and filling the opening groove, and exposing the first electrode layer from the surface of the second electrode layer A method of manufacturing an integrated solar cell, comprising a step of forming a second element isolation groove having a depth closer to the other wall surface of the opening groove than the part of the stacked body.   The method for manufacturing an integrated solar cell according to claim 6, further comprising a step of filling the second element isolation groove with an insulating material.   The opening groove is formed by forming two grooves using a mechanical scribing method at a predetermined interval so that a part of the stacked body remains in a region to be the opening groove. The manufacturing method of the integrated solar cell of Claim 6 or 7. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
After stacking at least the first electrode layer and the photoelectric conversion layer on a substrate having at least an insulating surface, the first electrode layer has a depth that exposes the surface of the substrate through the first electrode layer from the stacking surface. Forming an element isolation groove and a conduction groove having a depth exposing the first electrode layer from the laminated surface;
Filling the first element isolation trench with an insulating material;
Filling the conductive groove with a conductive material;
Forming a second electrode layer on the laminated surface including the surfaces of the insulating material and the conductive material filled in the grooves;
Forming a second element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer on a side opposite to the first element isolation groove of the conduction groove; and A method of manufacturing an integrated solar cell, comprising a step of filling the second element isolation groove with an insulating material. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
Forming at least a first electrode layer and a photoelectric conversion layer in order on a substrate having an insulating surface at least, and then forming an opening groove having a depth exposing the first electrode layer from the laminated surface;
Forming an electrode layer separation groove for separating the first electrode layer in a part of the first electrode layer exposed on the bottom surface of the opening groove,
Forming an insulating portion that covers one wall surface of the opening groove and embeds the electrode layer separation groove;
Forming a conductive layer from the laminated surface on the one wall surface side to the first electrode layer exposed on the bottom surface of the opening groove through the surface of the insulating portion;
A step of forming a second electrode layer on the surface of the conductive layer and the laminated surface; and an element isolation groove having a depth exposing the first electrode layer from the surface of the second electrode layer. A method of manufacturing an integrated solar cell, comprising a step of forming the other wall surface side end portion or the other wall surface side portion outside the opening groove.   The method of manufacturing an integrated solar cell according to claim 10, further comprising a step of filling the element isolation groove with an insulating material. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
At least a first electrode layer and a photoelectric conversion layer are stacked on a substrate having an insulating surface at least to form a stacked body, and an opening groove having a depth exposing the first electrode layer from the surface of the stacked body And forming an opening groove part in which a part of the laminate is left in a position spaced from both walls of the opening groove part in the groove width direction of the opening groove part,
Forming an electrode layer separation groove for separating the first electrode layer in the first electrode layer exposed between one wall surface of the opening groove and the part of the laminate;
Dropping an insulating ink from the part of the laminated body to the one wall surface of the opening groove to form an insulating portion that covers the one wall and fills the electrode layer separation groove;
Forming a second electrode layer on the surface of the stacked body and on the surface of the insulating portion and filling the opening groove, and exposing the first electrode layer from the surface of the second electrode layer A method of manufacturing an integrated solar cell, comprising a step of forming a second element isolation groove having a depth closer to the other wall surface of the opening groove than the part of the stacked body.   The method for manufacturing an integrated solar cell according to claim 12, further comprising a step of filling the second element isolation groove with an insulating material.   The opening groove is formed by forming two grooves using a mechanical scribing method at a predetermined interval so that a part of the stacked body remains in a region to be the opening groove. The method for producing an integrated solar cell according to claim 12 or 13. A method of manufacturing an integrated solar cell in which a plurality of photoelectric conversion elements each including a first electrode layer, a photoelectric conversion layer, and a second electrode layer in this order are arranged and connected in series on a substrate,
At least a first electrode layer and a photoelectric conversion layer are stacked on a substrate having an insulating surface at least to form a stacked body, and an opening groove having a depth exposing the first electrode layer from the surface of the stacked body And forming an opening groove part in which a part of the laminate is left in a position spaced from both walls of the opening groove part in the groove width direction of the opening groove part,
Forming an electrode layer separation groove for separating the first electrode layer in the first electrode layer exposed between one wall surface of the opening groove and the part of the laminate;
Dropping an insulating ink from the part of the laminated body to the one wall surface of the opening groove to form an insulating portion that covers the one wall and fills the electrode layer separation groove;
A conductive layer extending from the surface of the laminate on the one wall surface side to the first electrode layer exposed between the one wall surface and the part of the laminate via the surface of the insulating portion Forming a process,
Forming a second electrode layer on the surface of the stacked body and on the surface of the conductive layer and filling the opening groove, and exposing the first electrode layer from the surface of the second electrode layer A method of manufacturing an integrated solar cell, comprising a step of forming a second element isolation groove having a depth closer to the other wall surface of the opening groove than the part of the stacked body.   The method for manufacturing an integrated solar cell according to claim 15, further comprising a step of filling the second element isolation groove with an insulating material.   The opening groove is formed by forming two grooves using a mechanical scribing method at a predetermined interval so that a part of the stacked body remains in a region to be the opening groove. The method for producing an integrated solar cell according to claim 15 or 16.

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