JP2013140983A5 - - Google Patents

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Publication number
JP2013140983A5
JP2013140983A5 JP2012287333A JP2012287333A JP2013140983A5 JP 2013140983 A5 JP2013140983 A5 JP 2013140983A5 JP 2012287333 A JP2012287333 A JP 2012287333A JP 2012287333 A JP2012287333 A JP 2012287333A JP 2013140983 A5 JP2013140983 A5 JP 2013140983A5
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JP
Japan
Prior art keywords
semiconductor layer
nitride semiconductor
light emitting
emitting device
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012287333A
Other languages
English (en)
Japanese (ja)
Other versions
JP6087142B2 (ja
JP2013140983A (ja
Filing date
Publication date
Priority claimed from KR20120000622A external-priority patent/KR20130079873A/ko
Application filed filed Critical
Publication of JP2013140983A publication Critical patent/JP2013140983A/ja
Publication of JP2013140983A5 publication Critical patent/JP2013140983A5/ja
Application granted granted Critical
Publication of JP6087142B2 publication Critical patent/JP6087142B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2012287333A 2012-01-03 2012-12-28 発光素子 Expired - Fee Related JP6087142B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20120000622A KR20130079873A (ko) 2012-01-03 2012-01-03 발광소자 및 이를 포함하는 조명시스템
KR10-2012-0000622 2012-01-03

Publications (3)

Publication Number Publication Date
JP2013140983A JP2013140983A (ja) 2013-07-18
JP2013140983A5 true JP2013140983A5 (https=) 2016-02-04
JP6087142B2 JP6087142B2 (ja) 2017-03-01

Family

ID=47428533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012287333A Expired - Fee Related JP6087142B2 (ja) 2012-01-03 2012-12-28 発光素子

Country Status (6)

Country Link
US (1) US9018652B2 (https=)
EP (1) EP2613368B1 (https=)
JP (1) JP6087142B2 (https=)
KR (1) KR20130079873A (https=)
CN (1) CN103187496B (https=)
TW (1) TWI596798B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758603B (zh) * 2014-07-03 2022-03-21 晶元光電股份有限公司 光電元件及其製造方法
CN105224120B (zh) * 2014-07-03 2018-07-31 宸鸿科技(厦门)有限公司 基板结构
TWI759602B (zh) * 2019-05-24 2022-04-01 晶元光電股份有限公司 半導體元件

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116192A (ja) * 1995-10-16 1997-05-02 Toshiba Corp 発光ダイオード
CN100446289C (zh) * 1998-03-12 2008-12-24 日亚化学工业株式会社 氮化物半导体元件
JP4356555B2 (ja) * 1998-03-12 2009-11-04 日亜化学工業株式会社 窒化物半導体素子
KR100589621B1 (ko) * 1998-03-12 2006-06-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
JP3804335B2 (ja) * 1998-11-26 2006-08-02 ソニー株式会社 半導体レーザ
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
US7692182B2 (en) * 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
TW493287B (en) * 2001-05-30 2002-07-01 Epistar Corp Light emitting diode structure with non-conductive substrate
JP2003168822A (ja) * 2001-11-30 2003-06-13 Shin Etsu Handotai Co Ltd 発光素子及びその製造方法
JP4254373B2 (ja) * 2003-06-24 2009-04-15 日亜化学工業株式会社 窒化物半導体素子
US7751455B2 (en) * 2004-12-14 2010-07-06 Palo Alto Research Center Incorporated Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
JP2007096116A (ja) * 2005-09-29 2007-04-12 Toyoda Gosei Co Ltd 発光素子
JP2007134388A (ja) * 2005-11-08 2007-05-31 Sharp Corp 窒化物系半導体素子とその製造方法
JP2007220973A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
US20070228385A1 (en) * 2006-04-03 2007-10-04 General Electric Company Edge-emitting light emitting diodes and methods of making the same
TW200812113A (en) * 2006-05-23 2008-03-01 Alps Electric Co Ltd Semiconductor light emitting element and method for manufacturing the same
EP1883141B1 (de) * 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
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KR101072200B1 (ko) * 2009-03-16 2011-10-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101028286B1 (ko) * 2009-12-28 2011-04-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5994420B2 (ja) * 2012-06-21 2016-09-21 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US20140097442A1 (en) * 2012-10-09 2014-04-10 Industrial Technology Research Institute Nitride semiconductor device

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