JP2013140870A5 - - Google Patents
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- JP2013140870A5 JP2013140870A5 JP2012000335A JP2012000335A JP2013140870A5 JP 2013140870 A5 JP2013140870 A5 JP 2013140870A5 JP 2012000335 A JP2012000335 A JP 2012000335A JP 2012000335 A JP2012000335 A JP 2012000335A JP 2013140870 A5 JP2013140870 A5 JP 2013140870A5
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- JP
- Japan
- Prior art keywords
- power semiconductor
- power
- control
- semiconductor device
- die pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (7)
それぞれの面が略平行になるように形成されたリードフレーム内のパターンのうちの、前記電力用端子に延在する電力リードパターンと、前記制御用端子に延在する制御リードパターンと、少なくとも前記制御リードパターンの面に対して垂直な方向に段差付されるとともに前記制御リードパターンに近い方の面に前記電力用半導体素子の裏面電極が接合されたダイパッドと、
絶縁基板に配線パターンを積層して構成され、前記制御素子が搭載されるとともに、少なくとも一方の面に、前記電力用半導体素子の表面電極と接続するための電力配線パターンと、前記制御素子の電極と電気接続される制御配線パターンとが形成されたインターポーザ基板と、を備え、
前記リードフレームに対して前記インターポーザ基板が平行に位置するように、前記電力用半導体素子の表面電極に対して前記電力配線パターンを、前記制御リードパターンに対して前記制御配線パターンを対向させて接合するとともに、前記ダイパッドの少なくとも周縁部には、前記ダイパッドと前記インターポーザ基板との間隔を維持する間隔維持部材が配置されていることを特徴とする電力用半導体装置。 The power semiconductor element for controlling the main power and the control element for controlling the power semiconductor element are encapsulated in a rectangular plate-shaped sealing body, and the power is applied from one of the opposing side surfaces of the sealing body. A power semiconductor device in which a power terminal for connecting to a semiconductor element for use projects from a control terminal for connecting to the control element from the other,
Of the patterns in the lead frame formed so that each surface is substantially parallel, the power lead pattern extending to the power terminal, the control lead pattern extending to the control terminal, and at least the A die pad having a step in a direction perpendicular to the surface of the control lead pattern and having a back electrode of the power semiconductor element bonded to a surface closer to the control lead pattern;
The control element is mounted by laminating a wiring pattern on an insulating substrate, and a power wiring pattern for connecting to a surface electrode of the power semiconductor element on at least one surface, and an electrode of the control element And an interposer substrate on which a control wiring pattern to be electrically connected is formed,
The power wiring pattern is bonded to the surface electrode of the power semiconductor element, and the control wiring pattern is bonded to the control lead pattern so that the interposer substrate is positioned in parallel to the lead frame. In addition, a power semiconductor device is characterized in that an interval maintaining member for maintaining an interval between the die pad and the interposer substrate is disposed at least at a peripheral portion of the die pad.
はんだ材と、前記はんだ材よりも融点が高く、所定の代表径を有して前記はんだ材に内包され、前記間隔維持部材として機能する核体と、で構成されたはんだバンプが用いられていることを特徴とする請求項１に記載の電力用半導体装置。 At least one of the bonding between the surface electrode of the power semiconductor element and the power wiring pattern, and the bonding between the die pad and the interposer substrate,
A solder bump composed of a solder material and a core that has a higher melting point than the solder material, has a predetermined representative diameter, is included in the solder material, and functions as the gap maintaining member is used. The power semiconductor device according to claim 1.
前記ダイパッドから延在するとともに前記インターポーザ基板を支え、前記間隔維持部材として機能する支柱部が形成されていることを特徴とする請求項１または２に記載の電力用半導体装置。 In the die pad,
3. The power semiconductor device according to claim 1, wherein a post portion extending from the die pad and supporting the interposer substrate and functioning as the spacing maintaining member is formed. 4.
所定厚みを有して前記制御素子を封止するとともに、前記ダイパッドに対向して前記間隔維持部材として機能する封止樹脂を設けたことを特徴とする請求項１ないし４のいずれか１項に記載の電力用半導体装置。 The control element is mounted on the one surface side of the interposer substrate,
5. The sealing resin according to claim 1, wherein the control element is sealed with a predetermined thickness, and a sealing resin that functions as the gap maintaining member is provided opposite to the die pad. The power semiconductor device described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012000335A JP5800716B2 (en) | 2012-01-05 | 2012-01-05 | Power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012000335A JP5800716B2 (en) | 2012-01-05 | 2012-01-05 | Power semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013140870A JP2013140870A (en) | 2013-07-18 |
| JP2013140870A5 true JP2013140870A5 (en) | 2014-01-09 |
| JP5800716B2 JP5800716B2 (en) | 2015-10-28 |
Family
ID=49038075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012000335A Active JP5800716B2 (en) | 2012-01-05 | 2012-01-05 | Power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5800716B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6274986B2 (en) * | 2014-06-26 | 2018-02-07 | 三菱電機株式会社 | Power semiconductor module and manufacturing method thereof |
| JP6269573B2 (en) | 2015-05-18 | 2018-01-31 | 株式会社デンソー | Semiconductor device |
| WO2024013998A1 (en) * | 2022-07-15 | 2024-01-18 | 日立Astemo株式会社 | Semiconductor device |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07226422A (en) * | 1994-02-14 | 1995-08-22 | Sumitomo Electric Ind Ltd | Package of electronic component |
| JP3080049B2 (en) * | 1997-11-17 | 2000-08-21 | 日本電気株式会社 | Integrated circuit chip mounting structure and method |
| JP3674333B2 (en) * | 1998-09-11 | 2005-07-20 | 株式会社日立製作所 | Power semiconductor module and electric motor drive system using the same |
| JP2003100924A (en) * | 2001-09-21 | 2003-04-04 | Kyocera Corp | Semiconductor device |
| JP2004172211A (en) * | 2002-11-18 | 2004-06-17 | Yaskawa Electric Corp | Power module |
| JP4022758B2 (en) * | 2003-03-31 | 2007-12-19 | 株式会社デンソー | Semiconductor device |
| TWI226110B (en) * | 2004-03-17 | 2005-01-01 | Cyntec Co Ltd | Package with stacked substrates |
| JP2008066026A (en) * | 2006-09-05 | 2008-03-21 | Fuji Electric Holdings Co Ltd | Method for manufacturing organic el display panel |
| JP5193777B2 (en) * | 2008-09-26 | 2013-05-08 | 株式会社東芝 | Power semiconductor module and inverter system using it |
| JP2011044452A (en) * | 2009-08-19 | 2011-03-03 | Denso Corp | Electronic device and method of manufacturing the same |
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2012
- 2012-01-05 JP JP2012000335A patent/JP5800716B2/en active Active
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