JP2013137532A - 半導体表示装置 - Google Patents
半導体表示装置 Download PDFInfo
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- JP2013137532A JP2013137532A JP2012258074A JP2012258074A JP2013137532A JP 2013137532 A JP2013137532 A JP 2013137532A JP 2012258074 A JP2012258074 A JP 2012258074A JP 2012258074 A JP2012258074 A JP 2012258074A JP 2013137532 A JP2013137532 A JP 2013137532A
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- Prior art keywords
- transistor
- power supply
- supply voltage
- signal
- potential
- Prior art date
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Abstract
【解決手段】画素を有する画素部と、画像情報を有する画像信号の画素部への書き込みを制御する駆動回路と、駆動回路の動作を制御するパネルコントローラと、画像情報が記憶される画像メモリと、半導体表示装置における各種回路への電源電圧の供給を制御する電源コントローラと、パネルコントローラ、画像メモリ、及び電源コントローラの動作を統括的に制御するCPUとを有する。そして、画素部において静止画を表示する場合などに、駆動回路への電源電圧の供給を停止することで駆動回路を停止状態にし、画像信号の画素部への書き込みを停止する。さらに、駆動回路を停止状態にした後、パネルコントローラ及び画像メモリへの電源電圧の供給を停止し、CPUへの電源電圧の供給を停止する。
【選択図】図1
Description
図1に、本発明の一態様に係る半導体表示装置のブロック図を、一例として示す。なお、本明細書では、ブロック図において、回路を機能ごとに分類し、互いに独立したブロックとして示しているが、実際の回路は機能ごとに完全に切り分けることが難しく、一つの回路が複数の機能に係わることもあり得る。
図9の、期間1の動作について説明する。期間1では、電源電圧が記憶素子200に供給されている。期間1において、電位V2は電源電位VDDである。記憶素子200へ電源電圧が供給されている間は、第1記憶回路201がデータ(図9中、dataXと表記)を保持する。この際、制御信号S3の電位をローレベルとして、スイッチ205の第1の端子と第2の端子の間は非導通状態とする。なお、スイッチ203及びスイッチ204の第1の端子と第2の端子の間の状態(導通状態、非導通状態)はどちらの状態であってもよい。即ち、制御信号S2の電位は、ハイレベルであってもローレベルであってもよい(図9中、Aと表記)。また、トランジスタ209の状態(オン、オフ)はどちらの状態であってもよい。即ち、制御信号S1の電位は、ハイレベルであってもローレベルであってもよい(図9中、Aと表記)。期間1において、ノードM1の電位は、ハイレベルであってもローレベルであってもよい(図9中、Aと表記)。期間1において、ノードM2の電位は、ハイレベルであってもローレベルであってもよい(図9中、Aと表記)。期間1の動作を通常動作と呼ぶ。
図9の、期間2の動作について説明する。記憶素子200への電源電圧の供給を停止する前に、制御信号S1の電位をハイレベルとして、トランジスタ209をオンとする。上記動作により、第1記憶回路201に保持されたデータ(dataX)に対応する信号が、トランジスタ209を介してトランジスタ210のゲート電極に入力される。トランジスタ210のゲート電極に入力された信号は、容量素子208またはトランジスタ210のゲート容量によって保持される。よって、ノードM2の電位は、第1記憶回路201に保持されたデータに対応する信号電位(図9中、VXと表記)となる。その後、制御信号S1の電位をローレベルとしてトランジスタ209をオフとする。上記動作により、第1記憶回路201に保持されたデータに対応する信号が第2記憶回路202に保持される。期間2の間も、制御信号S3によって、スイッチ205の第1の端子と第2の端子の間は非導通状態となる。スイッチ203及びスイッチ204の第1の端子と第2の端子の間の状態(導通状態、非導通状態)はどちらであってもよい。即ち、制御信号S2の電位はハイレベルであってもローレベルであってもよい(図9中、Aと表記)。期間2において、ノードM1はハイレベルであってもローレベルであってもよい(図9中、Aと表記)。期間2の動作を電源電圧供給停止前の動作と呼ぶ。
図9の、期間4の動作について説明する。電位V2を電源電位VDDにすることで、記憶素子200への電源電圧の供給を再開した後、制御信号S2の電位をローレベルとして、スイッチ204の第1の端子と第2の端子の間を導通状態とし、スイッチ203の第1の端子と第2の端子の間を非導通状態とする。この際、制御信号S1の電位はローレベルであり、トランジスタ209はオフのままである。また、制御信号S3の電位はローレベルであり、スイッチ205の第1の端子と第2の端子の間は非導通状態である。よって、スイッチ203の第2の端子及びスイッチ204の第1の端子(ノードM1)に、一定の電位である電源電位VDDを与える(以下、プリチャージ動作と呼ぶ)ことができる。ノードM1の電位は、容量素子207によって保持される。
本実施の形態では、上記実施の形態に示す半導体表示装置100における、走査線駆動回路109及び信号線駆動回路108に適用可能なシフトレジスタの一例について説明する。
本実施の形態では、CPUの具体的な一形態について説明する。図13に、CPUの構成をブロックで一例として示す。
本実施の形態では、図5(B)に示した画素130を例に挙げて、本発明の一態様に係る半導体表示装置の、画素の構成について説明する。
本発明の一態様に係る半導体表示装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体表示装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯情報端末、電子書籍、ビデオカメラ、デジタルスチルカメラなどのカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンター、プリンター複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図15に示す。
本実施の形態では、画像メモリとして用いるのに適している、記憶装置の構成について説明する。図7に、記憶装置が有するメモリセル701の具体的な構成例を示す。
31 トランジスタ
32 トランジスタ
33 トランジスタ
34 トランジスタ
35 トランジスタ
36 トランジスタ
37 トランジスタ
38 トランジスタ
39 トランジスタ
40 トランジスタ
41 トランジスタ
61 選択期間
62 非選択期間
100 半導体表示装置
101 CPU
102 電源コントローラ
103 パネルコントローラ
104 画像メモリ
105 パネル
106 画素部
107 駆動回路
108 信号線駆動回路
109 走査線駆動回路
110 記憶装置
120 消費電力
121 消費電力
122 消費電力
130 画素
131 トランジスタ
132 液晶素子
133 容量素子
200 記憶素子
201 記憶回路
202 記憶回路
203 スイッチ
204 スイッチ
205 スイッチ
206 論理素子
207 容量素子
208 容量素子
209 トランジスタ
210 トランジスタ
213 トランジスタ
214 トランジスタ
221 スイッチング素子
222 記憶素子群
250 記憶素子
251 記憶回路
252 記憶回路
253a 論理素子
253b 論理素子
254 トランジスタ
255 トランジスタ
256 容量素子
257 トランジスタ
258 pチャネル型トランジスタ
259 nチャネル型トランジスタ
260 pチャネル型トランジスタ
261 nチャネル型トランジスタ
500 基板
501 導電膜
502 導電膜
503 導電膜
504 導電膜
505 画素電極
506 ゲート絶縁膜
507 活性層
508 絶縁膜
509 絶縁膜
510 スペーサ
512 絶縁膜
513 絶縁膜
514 基板
515 共通電極
516 液晶層
517 遮蔽膜
600 CPU
601 制御装置
602 ALU
603 データキャッシュ
604 命令キャッシュ
605 プログラムカウンタ
606 命令レジスタ
607 主記憶装置
608 レジスタファイル
701 メモリセル
703 トランジスタ
720 容量素子
721 トランジスタ
722 容量素子
723 トランジスタ
724 容量素子
5001 筐体
5002 筐体
5003 表示部
5004 表示部
5005 マイクロホン
5006 スピーカー
5007 操作キー
5008 スタイラス
5201 筐体
5202 表示部
5203 支持台
5401 筐体
5402 表示部
5403 キーボード
5404 ポインティングデバイス
5601 筐体
5602 筐体
5603 表示部
5604 表示部
5605 接続部
5606 操作キー
5801 筐体
5802 筐体
5803 表示部
5804 操作キー
5805 レンズ
5806 接続部
Claims (5)
- 画素部と、
第1電源電圧が供給されると、前記画素部への画像信号の入力を行う駆動回路と、
第2電源電圧が供給されると、記憶されている画像情報を出力する第1記憶装置と、
第3電源電圧が供給されると、前記第1記憶装置から出力された前記画像情報を用いて前記画像信号を生成し、前記画像信号と前記第1電源電圧とを前記駆動回路に供給する第1コントローラと、
第4電源電圧が供給されると、前記第1記憶装置、前記第1コントローラ、及び第2コントローラの動作を制御するCPUと、
前記第2電源電圧の前記第1記憶装置への供給の有無を選択し、前記第3電源電圧の前記第1コントローラへの供給の有無を選択し、なおかつ、前記第4電源電圧の前記CPUへの供給の有無を選択する前記第2コントローラと、を有し、
前記画素部は、前記画像信号に従って表示を行う表示素子と、前記画像信号の電位を保持する第1トランジスタとを有し、
前記CPUは第2記憶装置を有しており、
前記第2記憶装置は、前記第4電源電圧の供給によりデータが記憶される揮発性の第1記憶回路と、前記第1記憶回路に記憶されているデータを記憶する第2記憶回路と、を複数有し、
前記第2記憶回路は、前記データに従った量の電荷が蓄積される記憶部と、前記記憶部に蓄積された前記電荷を保持する第2トランジスタとを有し、
前記第1トランジスタ及び前記第2トランジスタは、チャネル形成領域に、バンドギャップがシリコンよりも広い半導体を含んでいる半導体表示装置。 - 画素部と、
第1電源電圧及び第1駆動信号が供給されると、前記画素部への画像信号の入力を行う駆動回路と、
第2電源電圧及び第2駆動信号が供給されると、記憶されている画像情報を出力する第1記憶装置と、
第3電源電圧及び第3駆動信号が供給されると、前記第1記憶装置から出力された前記画像情報を用いて前記画像信号を生成し、前記第3駆動信号を用いて前記第1駆動信号を生成し、なおかつ、前記画像信号と前記第1電源電圧と前記第1駆動信号とを、前記駆動回路に供給する第1コントローラと、
第4電源電圧及び第4駆動信号が供給されると、前記第1記憶装置、前記第1コントローラ、及び第2コントローラの動作を制御するCPUと、
前記第2電源電圧及び前記第2駆動信号の前記第1記憶装置への供給の有無を選択し、前記第3電源電圧及び前記第3駆動信号の前記第1コントローラへの供給の有無を選択し、なおかつ、前記第4電源電圧及び前記第4駆動信号の前記CPUへの供給の有無を選択する前記第2コントローラと、を有し、
前記画素部は、前記画像信号に従って表示を行う表示素子と、前記画像信号の電位を保持する第1トランジスタとを有し、
前記CPUは第2記憶装置を有しており、
前記第2記憶装置は、前記第4電源電圧の供給によりデータが記憶される揮発性の第1記憶回路と、前記第1記憶回路に記憶されているデータを記憶する第2記憶回路と、を複数有し、
前記第2記憶回路は、前記データに従った量の電荷が蓄積される記憶部と、前記記憶部に蓄積された前記電荷を保持する第2トランジスタとを有し、
前記第1トランジスタ及び前記第2トランジスタは、チャネル形成領域に、バンドギャップがシリコンよりも広い半導体を含んでいる半導体表示装置。 - 請求項1または請求項2において、
前記第1記憶回路は、互いに、他の出力端子が自らの入力端子に接続されることで、前記データを記憶する一対の論理素子を有する半導体表示装置。 - 請求項1乃至請求項3のいずれか1項において、
前記半導体は、酸化物半導体である半導体表示装置。 - 請求項4において、
前記酸化物半導体は、In、Ga、及びZnを含む半導体表示装置。
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Also Published As
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WO2013080931A1 (en) | 2013-06-06 |
KR102049126B1 (ko) | 2019-11-26 |
US9478704B2 (en) | 2016-10-25 |
TW201329947A (zh) | 2013-07-16 |
KR20140096330A (ko) | 2014-08-05 |
JP6616451B2 (ja) | 2019-12-04 |
JP6046992B2 (ja) | 2016-12-21 |
JP2018169619A (ja) | 2018-11-01 |
JP6348559B2 (ja) | 2018-06-27 |
US20130134416A1 (en) | 2013-05-30 |
TWI639150B (zh) | 2018-10-21 |
TWI591611B (zh) | 2017-07-11 |
JP2017084437A (ja) | 2017-05-18 |
US20170039970A1 (en) | 2017-02-09 |
US10002580B2 (en) | 2018-06-19 |
TW201738872A (zh) | 2017-11-01 |
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