JP2013120904A - Peeling device, peeling system, peeling method, program, and computer storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To equalize temperatures on surfaces of a processed substrate and a support substrate in the peeling process of the processed substrate and the support substrate, which involves heat treatment, and to properly conduct the peeling process of the processed substrate and the support substrate.SOLUTION: A peeling device 30 includes: a first holding part 110 which includes a heating mechanism 124 heating a processed wafer W and holds the processed wafer W; a second holding part 111 which includes a heating mechanism 142 heating a support wafer S and holds the support wafer S; and a moving mechanism 150 moving the second holding part 111 in the horizontal direction. A heat plate 120 of the first holding part 110 is divided into multiple heat plate regions 120a to 120e and a temperature may be set for each heat plate region 120a to 120e. A heat plate 140 of the second holding part 111 is divided into multiple heat plate regions 140a to 140e and a temperature may be set for each heat plate region 140a to 140e.

Description

  The present invention relates to a peeling device that peels a superposed substrate from a substrate to be processed and a support substrate, a peeling system including the peeling device, a peeling method using the peeling device, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have become larger in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, if a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, in order to reinforce the wafer, for example, the wafer is attached to a wafer or a glass substrate which is a support substrate. Then, after a predetermined process such as a wafer polishing process is performed in a state where the wafer and the support substrate are bonded in this way, the wafer and the support substrate are peeled off.

  The wafer and the support substrate are peeled off using, for example, a peeling device. For example, Patent Document 1 proposes a peeling apparatus that directly bonds a wafer on which a device is formed to a support substrate on which a thermal oxide film is formed, and then peels the wafer. This peeling apparatus has, for example, a first holder that holds a wafer, a second holder that holds a support substrate, and a nozzle that ejects liquid between the wafer and the support substrate. In this peeling apparatus, an injection pressure, preferably a bonding pressure, between the wafer and the support substrate bonded from the nozzle, that is, on the bonding surface between the wafer and the support substrate, is larger than the bonding strength between the wafer and the support substrate. Separation of the wafer and the support substrate is performed by ejecting the liquid with an ejection pressure that is twice or more larger than the strength.

JP-A-9-167724

  By the way, for bonding the wafer and the support substrate, for example, as disclosed in Patent Document 1, in addition to the method of directly bonding the wafer to the support substrate on which the thermal oxide film is formed, bonding between the support substrate and the wafer is performed. There is a method of joining with an agent interposed.

  When bonding is performed using an adhesive, it is necessary to soften the adhesive interposed between the wafer and the support substrate when peeling the wafer and the support substrate. For this reason, when the wafer and the support substrate are peeled off, the bonded wafer and the support substrate are subjected to heat treatment for the purpose of softening the adhesive.

  However, for example, when the wafer and the support substrate are moved relatively horizontally and separated, the exposed surface of the wafer and the support substrate is exposed to the surrounding processing atmosphere. It becomes lower than the temperature of the surface where the substrate is bonded. That is, the temperature in the surface is not uniform between the wafer and the support substrate.

  Here, when the temperature of the heat treatment is high, the adhesive is softened, and a load necessary for peeling the wafer and the support substrate may be small. On the other hand, when the temperature of the heat treatment is low, the adhesive is not softened, and a large load is required when the wafer and the support substrate are peeled off.

  Then, as described above, when the temperature in the surface becomes uneven between the wafer and the support substrate, the load acting on the wafer and the support substrate is not constant when the wafer and the support substrate are peeled off. For this reason, there exists a possibility that a wafer and a support substrate may be damaged.

  The present invention has been made in view of the above points, and in the separation process between the substrate to be processed and the support substrate accompanied by heat treatment, the surface temperature of the substrate to be processed and the support substrate is made uniform, The object is to appropriately perform the peeling treatment of the support substrate.

  In order to achieve the above object, the present invention is a peeling apparatus for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive to the substrate to be processed and the support substrate, and heating the substrate to be processed. A first holding portion that includes a heating mechanism and holds the substrate to be processed; a second holding portion that includes a heating mechanism that heats the support substrate and holds the support substrate; and at least the first holding portion A moving mechanism for moving the part or the second holding part relatively in the horizontal direction, the first holding part is partitioned into a plurality of areas, and the temperature can be set for each of the areas, The second holding unit is divided into a plurality of regions, and the temperature can be set for each region.

  According to the present invention, for example, at least the first holding while heating the substrate to be processed held by the first holding unit and the support substrate held by the second holding unit at the first temperature by the heating mechanism, respectively. The substrate or the second holding portion is moved relatively in the horizontal direction by the moving mechanism, and the substrate to be processed and the support substrate are peeled off. And when peeling a to-be-processed substrate and a support substrate, the heat processing temperature of the area | region of the 1st holding part corresponding to the to-be-processed substrate exposed by peeling is controlled to 2nd temperature higher than 1st temperature. Similarly, the heat treatment temperature of the region of the second holding portion corresponding to the support substrate exposed by peeling is controlled to a second temperature higher than the first temperature. Then, even if the surface of the exposed substrate to be processed and the support substrate is exposed to the surrounding processing atmosphere, the surface temperature of the surface of the exposed substrate to be processed and the support substrate is bonded to each other. Can be made the same temperature. That is, the temperatures in the surfaces of the substrate to be processed and the support substrate can be made uniform. Therefore, the load acting on the substrate to be processed and the support substrate in the peeling process can be made constant, and the peeling process between the substrate to be processed and the support substrate can be appropriately performed.

  The plurality of regions of the first holding unit are partitioned along at least the moving direction of the first holding unit or the second holding unit, and the plurality of regions of the second holding unit are at least the first It may be partitioned along the moving direction of the holding part or the second holding part.

  The peeling apparatus includes: a first correlation between a heat treatment temperature and a peeling treatment condition in a plurality of regions of the first holding unit; and a first correlation between a heat treatment temperature and a peeling treatment condition in a plurality of regions of the second holding unit. You may have a control part provided with 2 correlations.

  The peeling process conditions may include the type of the adhesive and the type of device formed on the substrate to be processed.

  The present invention according to another aspect is a peeling system including the peeling device, wherein the peeling device, a first cleaning device for cleaning a substrate to be processed peeled by the peeling device, and peeling by the peeling device. A second cleaning device for cleaning the supported substrate, a loading / unloading station for loading / unloading a substrate to be processed, a supporting substrate or a superposed substrate with respect to the processing station, and the processing station And a transfer device for transferring a substrate to be processed, a support substrate, or a superposed substrate to and from the loading / unloading station.

  According to another aspect of the present invention, there is provided a peeling method for peeling a polymerized substrate in which a substrate to be processed and a support substrate are bonded with an adhesive to the substrate to be processed and the support substrate, which is held by the first holding unit. The substrate to be processed is heated at the first temperature by the heating mechanism provided in the first holding unit, and the supporting substrate held in the second holding unit is heated in the second holding unit. While heating at the first temperature, at least the first holding part or the second holding part is moved in the horizontal direction relatively by a moving mechanism, the substrate to be processed and the support substrate are peeled off, and the first One holding section is divided into a plurality of areas, and the temperature can be set for each of the areas. The second holding section is divided into a plurality of areas, and the temperature can be set for each of the areas. When peeling the processing substrate and the support substrate, exposed by peeling The heat treatment temperature of the region of the first holding portion corresponding to the substrate to be processed is controlled to a second temperature higher than the first temperature, and the second holding corresponding to the support substrate exposed by peeling. The heat treatment temperature of the part region is controlled to the second temperature.

  The plurality of regions of the first holding unit are partitioned along at least the moving direction of the first holding unit or the second holding unit, and the plurality of regions of the second holding unit are at least the first It may be partitioned along the moving direction of the holding part or the second holding part.

  Control of the heat treatment temperature of the plurality of regions of the first holding unit is performed based on a first correlation between the heat treatment temperature and the stripping treatment conditions in the plurality of regions of the first holding unit, and the second The control of the heat treatment temperature in the plurality of regions of the holding unit may be performed based on a second correlation between the heat treatment temperature in the plurality of regions of the second holding unit and the peeling treatment condition.

  The peeling process conditions may include the type of the adhesive and the type of device formed on the substrate to be processed.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the peeling device in order to cause the peeling device to execute the peeling method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to the present invention, in the separation process between the substrate to be processed and the support substrate accompanied by the heat treatment, the surface temperature of the substrate to be processed and the support substrate is made uniform to appropriately perform the separation process between the substrate to be processed and the support substrate. be able to.

It is a top view which shows the outline of a structure of the peeling system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a longitudinal cross-sectional view which shows the outline of a structure of a peeling apparatus. It is a top view which shows the outline of a structure of the hot platen of a 1st holding | maintenance part. It is a top view which shows the outline of a structure of the hot platen of a 2nd holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a cross-sectional view which shows the outline of a structure of a 1st washing | cleaning apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a 2nd washing | cleaning apparatus. It is a side view which shows the outline of a structure of a 2nd conveying apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inversion apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of an inspection apparatus. It is a cross-sectional view which shows the outline of a structure of a test | inspection apparatus. It is a flowchart which shows the main processes of peeling processing. It is explanatory drawing which shows a mode that a superposition | polymerization wafer is preheated. It is explanatory drawing which shows a mode that the superposition | polymerization wafer was mounted in the 2nd holding | maintenance part. It is explanatory drawing which shows a mode that the superposition | polymerization wafer was hold | maintained with the 1st holding | maintenance part and the 2nd holding | maintenance part. It is explanatory drawing which shows a mode that a 2nd holding | maintenance part is moved to a perpendicular direction and a horizontal direction. It is explanatory drawing which shows a mode that a 2nd holding | maintenance part is moved to a perpendicular direction and a horizontal direction. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were peeled. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the 1st holding | maintenance part of a peeling apparatus to the Bernoulli chuck of a 2nd conveying apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the Bernoulli chuck of a 2nd conveying apparatus to the porous chuck | zipper of a 1st washing | cleaning apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered from the Bernoulli chuck of a 3rd conveying apparatus to the 2nd holding | maintenance part of an inversion apparatus. It is explanatory drawing which shows a mode that a to-be-processed wafer is delivered to the 1st holding | maintenance part from the 2nd holding | maintenance part of an inversion apparatus. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the 2nd holding | maintenance part of the inversion apparatus to the 1st holding | maintenance part. It is explanatory drawing which shows the state by which the to-be-processed wafer was delivered from the 1st holding | maintenance part of the inversion apparatus to the Bernoulli chuck of the 3rd conveying apparatus.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing an outline of a configuration of a peeling system 1 according to the present embodiment.

In the peeling system 1, as shown in FIG. 2, a superposed wafer T as a superposed substrate in which a target wafer W as a target substrate and a support wafer S as a support substrate are bonded with an adhesive G is used as a target wafer W. And the support wafer S is peeled off. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as “bonding surface W _J ”, and a surface opposite to the bonding surface W _J is referred to as “non-bonding surface W _N ”. That's it. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as “bonding surface S _J ”, and a surface opposite to the bonding surface S _J is referred to as “non-bonding surface S _N”. " Note that wafer W is a wafer as a product, for example, a plurality of devices having a plurality of electronic circuits and the like on the bonding surface W _J is formed. The wafer W is, for example, non-bonding surface _{W N} is polished, has been thinned (e.g., thickness 50 .mu.m to 100 .mu.m) is. The support wafer S is a wafer having a disk shape having the same diameter as the diameter of the wafer W to be processed and supporting the wafer W to be processed. In this embodiment, the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.

As shown in FIG. 1, the peeling system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. A loading / unloading station 2 for loading / unloading, a processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and a post-processing station 4 adjacent to the processing station 3 And the interface station 5 for transferring the wafer W to be processed between the two.

The carry-in / out station 2 and the processing station 3 are arranged side by side in the X direction (vertical direction in FIG. 1). A wafer transfer area 6 is formed between the carry-in / out station 2 and the processing station 3. The interface station 5 is disposed on the Y direction negative direction side (left direction side in FIG. 1) of the processing station 3. An inspection apparatus 7 for inspecting the wafer W to be processed before being transferred to the post-processing station 4 is disposed on the positive side in the X direction of the interface station 5 (upward in FIG. 1). Further, the opposite side of the inspection apparatus 7 across the interface station 5, i.e. the X-direction negative side of the interface station 5 (side downward direction in FIG. 1), the bonding surface W _J and wafer W after inspection A post-inspection cleaning station 8 that performs cleaning of the non-bonded surface W _N and inversion of the front and back surfaces of the wafer W to be processed is disposed.

The loading / unloading station 2 is provided with a cassette mounting table 10. A plurality of, for example, three cassette mounting plates 11 are provided on the cassette mounting table 10. The cassette mounting plates 11 are arranged in a line in the Y direction (left and right direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the peeling system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. Further, the plurality of superposed wafers T carried into the carry-in / out station 2 are inspected in advance, and a superposed wafer T including a normal target wafer W and a superposed wafer T including a defective target wafer W are obtained. And have been determined.

  A first transfer device 20 is disposed in the wafer transfer region 6. The first transfer device 20 includes a transfer arm that can move around, for example, a vertical direction, a horizontal direction (Y direction, X direction), and a vertical axis. The first transfer device 20 moves in the wafer transfer region 6 and can transfer the processing target wafer W, the support wafer S, and the overlapped wafer T between the transfer-in / out station 2 and the processing station 3.

  The processing station 3 includes a peeling device 30 that peels the superposed wafer T into the processing target wafer W and the supporting wafer S. A first cleaning device 31 that cleans the wafer to be processed W that has been peeled off is disposed on the negative side in the Y direction of the peeling device 30 (left side in FIG. 1). A second transfer device 32 is provided between the peeling device 30 and the first cleaning device 31. Further, a second cleaning device 33 for cleaning the peeled support wafer S is arranged on the positive side in the Y direction of the peeling device 30 (right side in FIG. 1). Thus, in the processing station 3, the first cleaning device 31, the second transfer device 32, the peeling device 30, and the second cleaning device 33 are arranged in this order from the interface station 5 side.

In the inspection apparatus 7, the presence or absence of the residue of the adhesive G on the processing target wafer W peeled by the peeling apparatus 30 is inspected. In the post-inspection cleaning station 8, the wafer W to be processed in which the residue of the adhesive G is confirmed by the inspection device 7 is cleaned. The inspection after cleaning station 8, the bonding surface cleaning device 40 for cleaning the joint surface W _J of wafer W, the non-bonding surface cleaning apparatus 41 for cleaning the non-bonding surface W _N of the wafer W, the wafer W Has a reversing device 42 for vertically reversing the front and back surfaces. The bonding surface cleaning device 40, the reversing device 42, and the non-bonding surface cleaning device 41 are arranged side by side in the Y direction from the post-processing station 4 side.

  The interface station 5 is provided with a third transport device 51 that is movable on a transport path 50 extending in the Y direction. The third transfer device 51 is also movable in the vertical direction and around the vertical axis (θ direction), and the wafer to be processed between the processing station 3, the post-processing station 4, the inspection device 7, and the post-inspection cleaning station 8. W can be conveyed.

  In the post-processing station 4, predetermined post-processing is performed on the processing target wafer W peeled off in the processing station 3. As predetermined post-processing, for example, processing for mounting the processing target wafer W, processing for inspecting electrical characteristics of devices on the processing target wafer W, processing for dicing the processing target wafer W for each chip, and the like are performed.

  Next, the structure of the peeling apparatus 30 mentioned above is demonstrated. As shown in FIG. 3, the peeling device 30 includes a processing container 100 that can seal the inside. A loading / unloading port (not shown) for the processing target wafer W, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  An exhaust port 101 for exhausting the atmosphere inside the processing container 100 is formed on the bottom surface of the processing container 100. An exhaust pipe 103 communicating with an exhaust device 102 such as a vacuum pump is connected to the exhaust port 101.

  Inside the processing container 100, a first holding unit 110 that holds the wafer W to be processed by suction on the lower surface and a second holding unit 111 that places and holds the support wafer S on the upper surface are provided. . The first holding unit 110 is provided above the second holding unit 111 and is disposed so as to face the second holding unit 111. That is, in the inside of the processing container 100, the peeling process is performed on the superposed wafer T in a state where the processing target wafer W is arranged on the upper side and the supporting wafer S is arranged on the lower side.

For example, a porous chuck is used for the first holding unit 110. The 1st holding | maintenance part 110 has the hot platen 120 which is a flat main body part. A porous 121 that is a porous body is provided on the lower surface side of the hot plate 120. Porous 121 has, for example, substantially the same diameter as the processed wafer W, and contact with the non-bonding surface W _N of the treated wafer W. For example, silicon carbide is used as the porous 121.

A suction space 122 is formed inside the hot plate 120 and above the porous 121. The suction space 122 is formed so as to cover the porous 121, for example. A suction tube 123 is connected to the suction space 122. The suction pipe 123 is connected to a negative pressure generator (not shown) such as a vacuum pump. Then, the non-joint surface W _{N of the} wafer to be processed is sucked from the suction pipe 123 through the suction space 122 and the porous 121, and the wafer to be processed W is sucked and held by the first holding unit 110.

  A heating mechanism 124 that heats the wafer W to be processed is provided inside the hot plate 120 and above the suction space 122. For the heating mechanism 124, for example, a heater is used.

  As shown in FIG. 4, the hot plate 120 is divided into a plurality of, for example, five hot plate regions 120a, 120b, 120c, 120d, and 120e. These hot plate regions 120a, 120b, 120c, 120d, and 120e are arranged in this order along the moving direction of the second holding unit 111 (the negative direction in the X direction in FIG. 4) described later.

  The heating mechanism 124 described above is individually incorporated in each of the hot plate regions 120a to 120e of the hot plate 120, and can be heated for each of the hot plate regions 120a to 120e. The amount of heat generated by the heating mechanism 124 of each of the hot plate regions 120a to 120e is adjusted by the temperature control unit 125. The temperature control unit 125 can control the temperature of each of the hot plate regions 120a to 120e to a heating temperature as a predetermined heat treatment temperature by adjusting the amount of heat generated by the heating mechanism 124. The setting of the heating temperature in the temperature control unit 125 is performed by, for example, the control unit 350 described later.

  The temperature controller 125 records a first correlation between the heating temperature of the hot plate regions 120a to 120e and the peeling process conditions. The peeling process conditions include the type of adhesive G and the type of device formed on the wafer W to be processed. And the kind of adhesive G and the kind of device are changed, and the temperature change of the to-be-processed wafer W during a peeling process is measured. The heating temperature of each of the hot plate regions 120a to 120e is obtained so as to compensate for this temperature change, that is, so that the temperature of the wafer W to be processed becomes uniform in the surface. A database of these hot plate regions 120a to 120e and the peeling process conditions is created to derive a first correlation. When deriving the first correlation, the superposed wafer T for inspection may be actually peeled off or a simulation may be performed.

  As shown in FIG. 3, a support plate 130 that supports the first holding unit 110 is provided on the upper surface of the first holding unit 110. The support plate 130 is supported on the ceiling surface of the processing container 100. Note that the support plate 130 of the present embodiment may be omitted, and the first holding unit 110 may be supported in contact with the ceiling surface of the processing container 100.

  The second holding part 111 has a heat plate 140 that is a flat plate-like main body part. Inside the heat plate 140, a suction tube 141 for sucking and holding the support wafer S is provided. The suction tube 141 is connected to a negative pressure generator (not shown) such as a vacuum pump.

  A heating mechanism 142 that heats the support wafer S is provided inside the second holding unit 111. For the heating mechanism 142, for example, a heater is used.

  As shown in FIG. 5, the hot plate 140 is divided into a plurality of, for example, five hot plate regions 140a, 140b, 140c, 140d, and 140e. These hot plate regions 140a, 140b, 140c, 140d, and 140e are arranged in this order along the moving direction of the second holding unit 111 described later (the negative direction in the X direction in FIG. 5).

  The heating mechanism 124 described above is individually incorporated in each of the hot plate regions 140a to 140e of the hot plate 140, and can be heated for each of the hot plate regions 140a to 140e. The amount of heat generated by the heating mechanism 124 of each of the hot plate regions 140a to 140e is adjusted by the temperature control unit 143. The temperature control unit 143 can adjust the heat generation amount of the heating mechanism 142 to control the temperature of each of the hot plate regions 140a to 140e to a heating temperature as a predetermined heat treatment temperature. The setting of the heating temperature in the temperature control unit 143 is performed by, for example, the control unit 350 described later.

  The temperature controller 143 records the second correlation between the heating temperature of the hot plate regions 140a to 140e and the peeling process conditions. The peeling process conditions include the type of adhesive G and the type of device formed on the wafer W to be processed. And the kind of adhesive G and the kind of device are changed, and the temperature change of the support wafer S during peeling processing is measured. The heating temperature of each of the hot plate regions 140a to 140e is obtained so as to compensate for this temperature change, that is, so that the temperature of the support wafer S is uniform within the surface. A database of these hot plate regions 140a to 140e and peeling process conditions is created to derive a second correlation. When deriving the second correlation, the superposed wafer T for inspection may be actually peeled off or a simulation may be performed.

  Below the second holding unit 111, a moving mechanism 150 is provided for moving the second holding unit 111 and the support wafer S in the vertical direction and the horizontal direction, as shown in FIG. The moving mechanism 150 includes a vertical moving unit 151 that moves the second holding unit 111 in the vertical direction and a horizontal moving unit 152 that moves the second holding unit 111 in the horizontal direction.

  The vertical moving unit 151 moves up and down the support plate 160 that supports the lower surface of the second holding unit 111 and causes the first holding unit 110 and the second holding unit 111 to approach and separate in the vertical direction. The drive unit 161 and the support member 162 that supports the support plate 160 are provided. The drive unit 161 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. The support member 162 is configured to be extendable in the vertical direction, and is provided at, for example, four locations between the support plate 160 and a support body 171 described later.

  The horizontal moving unit 152 includes a rail 170 extending along the X direction (left and right direction in FIG. 3), a support 171 attached to the rail 170, and a drive unit 172 that moves the support 171 along the rail 170. have. The drive unit 172 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw.

  In addition, below the 2nd holding | maintenance part 111, the raising / lowering pin (not shown) for supporting and raising / lowering the superposition | polymerization wafer T or the support wafer S from the downward direction is provided. The elevating pin is inserted through a through hole (not shown) formed in the second holding part 111 and can protrude from the upper surface of the second holding part 111.

  Next, the configuration of the first cleaning device 31 described above will be described. As shown in FIG. 6, the first cleaning device 31 has a processing container 180 that can be sealed inside. A loading / unloading port (not shown) for the processing target wafer W is formed on the side surface of the processing container 180, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

A porous chuck 190 that holds and rotates the wafer W to be processed is provided at the center of the processing container 180. The porous chuck 190 includes a plate-shaped main body 191 and a porous 192 that is a porous body provided on the upper surface side of the main body 191. The porous 192 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W _{N of the} wafer to be processed W. As the porous 192, for example, silicon carbide is used. A suction pipe (not shown) is connected to the porous 192, and the non-bonded surface W _N of the wafer to be processed W is sucked from the suction pipe through the porous 192, so that the wafer to be processed W is placed on the porous chuck 190. Can be adsorbed and retained.

  Below the porous chuck 190, for example, a chuck driving unit 193 provided with a motor or the like is provided. The porous chuck 190 can be rotated at a predetermined speed by the chuck driving unit 193. Further, the chuck driving unit 193 is provided with an elevating drive source such as a cylinder, for example, and the porous chuck 190 is movable up and down.

  Around the porous chuck 190, there is provided a cup 194 that receives and collects the liquid scattered or dropped from the wafer W to be processed. Connected to the lower surface of the cup 194 are a discharge pipe 195 for discharging the collected liquid and an exhaust pipe 196 for evacuating and exhausting the atmosphere in the cup 194.

  As shown in FIG. 7, a rail 200 extending along the Y direction (left and right direction in FIG. 7) is formed on the side of the cup 194 in the negative X direction (downward direction in FIG. 7). The rail 200 is formed, for example, from the outside of the cup 194 on the Y direction negative direction (left direction in FIG. 7) side to the outside of the Y direction positive direction (right direction in FIG. 7) side. An arm 201 is attached to the rail 200.

  As shown in FIGS. 6 and 7, the arm 201 supports a cleaning liquid nozzle 202 that supplies a cleaning liquid, for example, an organic solvent that is a solvent for the adhesive G, to the wafer W to be processed. The arm 201 is movable on the rail 200 by a nozzle driving unit 203 shown in FIG. As a result, the cleaning liquid nozzle 202 can move from the standby unit 204 installed outside the positive direction of the Y direction of the cup 194 to the upper part of the center of the wafer W to be processed in the cup 194, and further on the wafer W to be processed. Can be moved in the radial direction of the wafer W to be processed. The arm 201 can be moved up and down by a nozzle driving unit 203 and the height of the cleaning liquid nozzle 202 can be adjusted.

  For example, a two-fluid nozzle is used as the cleaning liquid nozzle 202. As shown in FIG. 6, a supply pipe 210 that supplies the cleaning liquid to the cleaning liquid nozzle 202 is connected to the cleaning liquid nozzle 202. The supply pipe 210 communicates with a cleaning liquid supply source 211 that stores the cleaning liquid therein. The supply pipe 210 is provided with a supply device group 212 including a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like. The cleaning liquid nozzle 202 is connected to a supply pipe 213 that supplies an inert gas such as nitrogen gas to the cleaning liquid nozzle 202. The supply pipe 213 communicates with a gas supply source 214 that stores an inert gas therein. The supply pipe 213 is provided with a supply device group 215 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like. Then, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 202 and supplied from the cleaning liquid nozzle 202 to the wafer W to be processed. In the following, a mixture of a cleaning liquid and an inert gas may be simply referred to as “cleaning liquid”.

  In addition, below the porous chuck 190, lifting pins (not shown) for supporting and lifting the wafer to be processed W from below may be provided. In such a case, the elevating pins can pass through a through hole (not shown) formed in the porous chuck 190 and protrude from the upper surface of the porous chuck 190. Then, instead of raising and lowering the porous chuck 190, the raising and lowering pins are raised and lowered, and the wafer W to be processed is transferred to and from the porous chuck 190.

  The configuration of the bonded surface cleaning device 40 and the non-bonded surface cleaning device 41 of the post-inspection cleaning station 8 is the same as the configuration of the first cleaning device 31 described above, and thus the description thereof is omitted.

  The configuration of the second cleaning device 33 is substantially the same as the configuration of the first cleaning device 31 described above. The second cleaning device 33 is provided with a spin chuck 220 instead of the porous chuck 190 of the first cleaning device 31 as shown in FIG. The spin chuck 220 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the support wafer S is provided on the upper surface. The support wafer S can be sucked and held on the spin chuck 220 by suction from the suction port. Since the other structure of the 2nd washing | cleaning apparatus 33 is the same as that of the structure of the 1st washing | cleaning apparatus 31 mentioned above, description is abbreviate | omitted.

In the second cleaning device 33, below the spin chuck 220, it has a back rinse nozzle for injecting a cleaning liquid toward a back surface of the processing the wafer W, i.e. the non-bonding surface W _N (not shown) is provided May be. The non-bonded surface W _N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.

  Next, the configuration of the second transport device 32 described above will be described. The second transfer device 32 has a Bernoulli chuck 230 that holds the wafer W to be processed as shown in FIG. Bernoulli chuck 230 is supported by support arm 231. The support arm 231 is supported by the first drive unit 232. The first drive unit 232 allows the support arm 231 to rotate around the horizontal axis and extend and contract in the horizontal direction. A second driving unit 233 is provided below the first driving unit 232. By the second drive unit 233, the first drive unit 232 can rotate around the vertical axis and can move up and down in the vertical direction.

  In addition, since the 3rd conveying apparatus 51 has the structure similar to the 2nd conveying apparatus 32 mentioned above, description is abbreviate | omitted. However, the second drive unit 232 of the third transport device 51 is attached to the transport path 50 shown in FIG. 1, and the third transport device 51 is movable on the transport path 50.

  Next, the configuration of the reversing device 42 described above will be described. As illustrated in FIG. 10, the reversing device 42 includes a processing container 240 that houses a plurality of devices. A loading / unloading port (not shown) for loading / unloading the wafer W to be processed by the third transfer device 51 is formed on the side surface of the processing container 240. (Not shown) is provided.

  An exhaust port 250 for exhausting the atmosphere inside the processing container 240 is formed on the bottom surface of the processing container 240. An exhaust pipe 252 communicating with an exhaust device 251 such as a vacuum pump is connected to the exhaust port 250.

  Inside the processing container 240, a first holding unit 260 that holds the wafer W to be processed on the lower surface and a second holding unit 261 that holds the wafer W to be processed on the upper surface are provided. The first holding unit 260 is provided above the second holding unit 261 and is disposed to face the second holding unit 261. For example, the first holding unit 260 and the second holding unit 261 have substantially the same diameter as the wafer W to be processed. Further, Bernoulli chucks are used for the first holding unit 260 and the second holding unit 261. Thereby, the 1st holding | maintenance part 260 and the 2nd holding | maintenance part 261 can hold | maintain the whole surface of the single side | surface of the to-be-processed wafer W, respectively, non-contactingly.

  A support plate 262 that supports the first holding unit 260 is provided on the upper surface of the first holding unit 260. Note that the support plate 262 of the present embodiment may be omitted, and the first holding unit 260 may be supported in contact with the ceiling surface of the processing container 240.

  Below the second holding part 261, a moving mechanism 270 for moving the second holding part 261 in the vertical direction is provided. The moving mechanism 270 drives the support plate 271 that supports the lower surface of the second holding unit 261, and moves the support plate 271 up and down so that the first holding unit 260 and the second holding unit 261 approach and separate in the vertical direction. Part 272. The driving unit 272 is supported by a support body 273 provided on the bottom surface of the processing container 240. A support member 274 that supports the support plate 271 is provided on the upper surface of the support body 273. The support member 274 is configured to be extendable and contractible in the vertical direction, and can freely expand and contract when the support plate 271 is moved up and down by the drive unit 272.

  Next, the configuration of the above-described inspection apparatus 7 will be described. The inspection apparatus 7 has a processing container 280 as shown in FIGS. 11 and 12. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 280, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

In the processing container 280, a porous chuck 290 that holds the processing target wafer W is provided. The porous chuck 290 includes a plate-shaped main body 291 and a porous 292 that is a porous body provided on the upper surface side of the main body 291. The porous 292 has, for example, substantially the same diameter as the wafer to be processed W, and is in contact with the non-joint surface W _{N of the} wafer to be processed W. As the porous 292, for example, silicon carbide is used. A suction pipe (not shown) is connected to the porous 292, and the non-bonding surface W _N of the wafer to be processed W is sucked from the suction pipe through the porous 292, so that the wafer to be processed W is placed on the porous chuck 290. Can be adsorbed and retained.

  A chuck driving unit 293 is provided below the porous chuck 290. By this chuck drive unit 293, the porous chuck 290 is rotatable. Further, the chuck driving unit 293 is provided on the bottom surface in the processing container 280 and is attached on a rail 294 extending along the Y direction. The porous chuck 290 can be moved along the rail 294 by the chuck driving unit 293. That is, the porous chuck 290 is between the delivery position P1 for loading / unloading the processing target wafer W from / to the outside of the processing container 280 and the alignment position P2 for adjusting the position of the notch portion of the processing target wafer W. I can move.

  A sensor 295 that detects the position of the notch portion of the wafer W to be processed held by the porous chuck 290 is provided at the alignment position P2. The position of the notch portion of the wafer W to be processed can be adjusted by rotating the porous chuck 290 by the chuck driving portion 293 while detecting the position of the notch portion by the sensor 295.

  An imaging device 300 is provided on the side surface of the processing container 280 on the alignment position P2 side. For the imaging device 300, for example, a wide-angle CCD camera is used. A half mirror 301 is provided near the upper center of the processing container 280. The half mirror 301 is provided at a position facing the imaging device 300 and is inclined by 45 degrees from the vertical direction. An illumination device 302 that can change the illuminance is provided above the half mirror 301, and the half mirror 301 and the illumination device 302 are fixed to the upper surface of the processing container 280. In addition, the imaging device 300, the half mirror 301, and the illumination device 302 are respectively provided above the processing target wafer W held by the porous chuck 290. The illumination from the illumination device 302 passes through the half mirror 301 and is illuminated downward. Therefore, the reflected light of the object in this irradiation region is reflected by the half mirror 301 and taken into the imaging device 300. That is, the imaging apparatus 300 can capture an object in the irradiation area. Then, the captured image of the processing target wafer W is output to the control unit 350 described later, and the control unit 350 inspects whether or not the adhesive G remains on the processing target wafer W.

  The peeling system 1 is provided with a control unit 350 as shown in FIG. The control unit 350 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the peeling system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses to realize a peeling process described later in the peeling system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 350 from the storage medium H.

  Next, the peeling process method of the to-be-processed wafer W and the support wafer S performed using the peeling system 1 comprised as mentioned above is demonstrated. FIG. 13 is a flowchart showing an example of main steps of the peeling process.

First, a cassette C _T accommodating a plurality of bonded wafer _T, an empty cassette C _W, and an empty cassette C _S is placed on the predetermined cassette mounting plate 11 of the carry-out station 2. The superposed wafer _T in the cassette CT is taken out by the first transfer device 20 and transferred to the peeling device 30 of the processing station 3. At this time, the superposed wafer T is transported in a state where the processing target wafer W is disposed on the upper side and the support wafer S is disposed on the lower side.

  The overlapped wafer T carried into the peeling apparatus 30 is delivered to lifting pins (not shown) that have been raised in advance. As shown in FIG. 14, the overlapped wafer T is in contact with both the first holding unit 110 and the second holding unit 111 between the first holding unit 110 and the second holding unit 111. It is arranged at the position not to. After a predetermined time has passed in this state, the superposed wafer T is preheated by the heating mechanisms 124 and 142. With such preliminary heating, even if the wafer W to be processed is sucked and held by the first holding unit 110 and heated as described later, the thermal expansion of the wafer W to be processed can be suppressed. For this reason, compared with the conventional case where the wafer to be processed at room temperature is heated by the first holding unit, the present embodiment suppresses the warpage of the wafer to be processed W and the first wafer and the first wafer to be processed. Particles generated by rubbing the holding portions 110 can be suppressed.

Thereafter, as shown in FIG. 15, the overlapped wafer T is sucked and held by the second holding unit 111. Then, after a predetermined time has elapsed, the overlapped wafer W is heated to a predetermined first temperature, for example, 200 ° C. to 250 ° C. by the heating mechanisms 124 and 142 and to 220 ° C. in the present embodiment. As a result, the adhesive G in the superposed wafer T is softened. Thereafter, the second holding unit 111 is raised by the moving mechanism 150, and the overlapped wafer T is sandwiched and held between the first holding unit 110 and the second holding unit 111 as shown in FIG. At this time, the non-bonding surface W _N of the wafer W is held by suction on the first holding portion 110, the non-bonding surface S _N of the support wafer S is held by suction to the second holding portion 111.

  Subsequently, while the superposed wafer T is heated by the heating mechanisms 124 and 142 and the softened state of the adhesive G is maintained, the second holding unit 111 and the support wafer S are moved by the moving mechanism 150 as shown in FIGS. Are moved vertically and horizontally, that is, obliquely downward.

  At this time, the temperature of the hot plate regions 120a to 120e of the first holding unit 110 corresponding to the processing target wafer W exposed by the peeling is higher than the first temperature based on the first correlation of the temperature control unit 125. The temperature is controlled to a second temperature, for example, 230 ° C. Similarly, the temperature of the hot plate regions 140a to 140e of the second holding unit 111 corresponding to the support wafer S exposed by peeling is higher than the first temperature based on the second correlation of the temperature control unit 143. It is controlled to a certain second temperature, for example 230 ° C.

  Specifically, as shown in FIG. 17, the hot plate region 120a corresponding to the processing target wafer W that is first exposed in the first holding unit 110 is controlled to the second temperature. At this time, even if a temperature control signal for changing to the second temperature is output from the temperature control unit 125 to the hot plate region 120a, the sensitivity of the hot plate 120 is not good, so that the hot plate region 120a is immediately set to the second temperature. Does not reach temperature. Therefore, the temperature of the hot plate region 120a is controlled in anticipation of the timing at which the processing target wafer W is exposed. For example, when it takes 5 seconds to control the temperature of the hot plate area 120a to the second temperature, a temperature control signal is output from the temperature control unit 125 to the hot plate area 120a 5 seconds before the wafer W to be processed is exposed. . When the wafer W to be processed is exposed, the hot plate area 120a is at the second temperature. Further, the hot plate region 140e corresponding to the support wafer S that is first exposed in the second holding unit 111 is also controlled to the second temperature at the same timing. In such a case, even if the processing target wafer W and the supporting wafer S exposed by peeling are exposed to the surrounding atmosphere, the exposed processing target wafer W and the supporting wafer S compensate for the temperature change cooled by the surrounding atmosphere. The heating plate regions 120a and 140e controlled to the second temperature are heated. And the temperature of the said to-be-processed wafer W and the support wafer S which were exposed is maintained at the same temperature as the to-be-processed wafer W and the support wafer S of the joined state.

  Subsequently, as shown in FIG. 18, the hot plate region 120 b corresponding to the next wafer W to be exposed in the first holding unit 110 is controlled to the second temperature. Similarly, the hot plate region 140d corresponding to the support wafer S to be exposed next in the second holding unit 111 is controlled to the second temperature. Then, the temperatures of the exposed processing target wafer W and the supporting wafer S are maintained at the same temperature as the processing target wafer W and the supporting wafer S in a bonded state. In this way, during the peeling process, the temperatures of the wafer W to be processed and the support wafer S are maintained uniformly in the plane. As a result, the load acting on the wafer W and the support wafer S during the peeling process can be made constant.

  And as shown in FIG. 19, the to-be-processed wafer W hold | maintained at the 1st holding | maintenance part 110 and the support wafer S hold | maintained at the 2nd holding | maintenance part 111 are peeled (process A1 of FIG. 13).

In step A1, the second holding unit 111 moves 100 μm in the vertical direction and moves 300 mm in the horizontal direction. In the present embodiment, the thickness of the adhesive G in bonded wafer T is a 30μm~40μm example, the height of the devices formed on the bonding surface W _J of the processing target wafer W (bump), for example 20 μm. Therefore, the distance between the device on the processing target wafer W and the support wafer S is very small. Therefore, for example, when the second holding unit 111 is moved only in the horizontal direction, the device and the support wafer S may come into contact with each other and the device may be damaged. In this regard, by moving the second holding unit 111 in the horizontal direction and also in the vertical direction as in the present embodiment, contact between the device and the support wafer S is avoided, and damage to the device is suppressed. be able to. The ratio of the vertical movement distance and the horizontal movement distance of the second holding unit 111 is set based on the height of the device (bump) on the wafer W to be processed.

  Thereafter, the wafer W to be processed peeled off by the peeling device 30 is transferred to the first cleaning device 31 by the second transfer device 32. Here, a transfer method of the wafer W to be processed by the second transfer device 32 will be described.

As shown in FIG. 20, the support arm 231 of the second transfer device 32 is extended, and the Bernoulli chuck 230 is disposed below the wafer W to be processed held by the first holding unit 110. Thereafter, the Bernoulli chuck 230 is raised, and the suction of the wafer W to be processed from the suction tube 123 in the first holding unit 110 is stopped. Then, the processing target wafer W is delivered from the first holding unit 110 to the Bernoulli chuck 230. Thereafter, the Bernoulli chuck 230 is lowered to a predetermined position. Note that the wafer W to be processed is held in a non-contact state by the Bernoulli chuck 230. Therefore, wafer W is held without device on the bonding surface W _J of wafer W suffers damage. At this time, the second holding unit 111 moves to a position facing the first holding unit 110.

  Next, as shown in FIG. 21, the support arm 231 of the second transport device 32 is rotated to move the Bernoulli chuck 230 above the porous chuck 190 of the first cleaning device 31, and the Bernoulli chuck 230 is reversed. Then, the processing target wafer W is directed downward. At this time, the porous chuck 190 is raised above the cup 194 and kept waiting. Thereafter, the wafer W to be processed is delivered from the Bernoulli chuck 230 to the porous chuck 190 and held by suction.

When the wafer to be processed W is sucked and held on the porous chuck 190 in this way, the porous chuck 190 is lowered to a predetermined position. Subsequently, the arm 201 moves the cleaning liquid nozzle 202 of the standby unit 204 to above the center of the wafer W to be processed. Thereafter, while rotating the wafer W by the porous chuck 190, and supplies the cleaning liquid from the cleaning liquid nozzle 202 to the bonding surface W _J of wafer W. Supplied cleaning liquid is diffused over the entire surface of the bonding surface W _J of wafer W by the centrifugal force, the bonding surface W _J of the wafer W is cleaned (step A2 in FIG. 13).

  Here, as described above, the plurality of superposed wafers T carried into the carry-in / out station 2 have been inspected in advance, and the superposed wafer T including the normal target wafer W and the defective target wafer W are arranged. The superposed wafer T is discriminated.

The normal processing wafer W peeled from the normal superposed wafer T is inspected by the third transfer device 51 with the non-bonding surface W _N facing downward after the bonding surface W _J is cleaned in step A2. It is conveyed to the device 7. Note that the transfer of the wafer W to be processed by the third transfer device 51 is substantially the same as the transfer of the wafer W to be processed by the second transfer device 32 described above, and a description thereof will be omitted.

  The wafer to be processed W transferred to the inspection apparatus 7 is held on the porous chuck 290 at the delivery position P1. Subsequently, the porous chuck 290 is moved to the alignment position P2 by the chuck driving unit 293. Next, the porous chuck 290 is rotated by the chuck driving unit 293 while detecting the position of the notch portion of the wafer W to be processed by the sensor 295. And the position of the notch part of the to-be-processed wafer W is adjusted, and the said to-be-processed wafer W is arrange | positioned in a predetermined direction.

After that, the chuck driving unit 293 moves the porous chuck 290 from the alignment position P2 to the delivery position P1. Then, when the wafer W to be processed passes under the half mirror 301, the illumination apparatus 302 illuminates the wafer W to be processed. The reflected light on wafer W by the illumination is taken into the imaging apparatus 300, an image of the bonding surface W _J of wafer W is captured by the image capturing device 300. Image of the bonding surface W _J of wafer W captured is outputted to the control unit 350, the control unit 350, the presence or absence of adhesive residue G at the joint surface W _J of wafer W is inspected (FIG. 13 step A3).

When the residue of the adhesive G is confirmed in the inspection apparatus 7, the wafer W to be processed is transferred to the bonding surface cleaning apparatus 40 of the post-inspection cleaning station 8 by the third transfer apparatus 51, and the bonding surface is cleaned in the bonding surface cleaning apparatus 40. adhesive G on W _J is removed (step A4 in FIG. 13). Note that step A4 is the same as step A2 described above, and a description thereof will be omitted. Further, for example, when it is confirmed by the inspection device 7 that there is no residue of the adhesive G, the step A4 may be omitted.

When bonding surface W _J is cleaned wafer W is transferred to the reversing device 42 by the third transporting device 51, reverses the front and back surfaces by the reversing device 42, that is, reversed in the vertical direction (step of FIG. 13 A5). Here, a method for reversing the wafer W to be processed by the reversing device 42 will be described.

The bonding surface W _J is cleaned by the bonding surface cleaning device 40, and the wafer W to be processed is in a state where the bonding surface W _J is held by the Bernoulli chuck 230 of the third transfer device 51 as shown in FIG. It is conveyed to. The wafer W is, the bonding surface W _J passed in a state where upward to the second holding portion 261 of the reversing device 42, the non-bonding surface W of the wafer W by the second holding portion 261 The entire surface of _N is held.

Next, the Bernoulli chuck 230 of the third transport device 51 is retracted from above the second holding unit 261, and then the second holding unit 261 is raised by the driving unit 283, in other words, as shown in FIG. The first holding unit 260 is brought closer. Then, while holding the joint surface W _J of wafer W by the first holding portion 260, stop the holding of the wafer W by the second holding portion 261, a first holding a wafer W Delivered to the unit 260. As a result, as shown in FIG. 24, the wafer W to be processed is held by the first holding unit 260 with the non-bonding surface W _N facing downward.

Thereafter, the second holding unit 261 is lowered to separate the first holding unit 260 and the second holding unit 261, and then the retracted Bernoulli chuck 230 of the third transport device 51 is rotated about the horizontal axis. Move. Then, with the Bernoulli chuck 230 facing upward, the Bernoulli chuck 230 is disposed below the first holding unit 260. Next, the Bernoulli chuck 230 is raised, and at the same time, the holding of the wafer W to be processed by the first holding unit 260 is stopped. Thereby, wafer W which has been held the joint surface W _J by Bernoulli chuck 230 when it is carried into the joint surface cleaning apparatus 40, as shown in FIG. 25, the non-bonding surface W _N by Bernoulli chuck 230 It will be held. That is, the front and back surfaces of the wafer to be processed held by the Bernoulli chuck 230 are reversed. Thereafter, the Bernoulli chuck 230 is retracted from the reversing device 42 while the non-bonding surface W _N of the wafer W to be processed is held.

  If the residue of the adhesive G is not confirmed in the inspection device 7, the wafer W to be processed is reversed by the reversing device 42 without being transferred to the bonding surface cleaning device 40. However, the inversion method is the same as that described above.

Thereafter, the Bernoulli chuck 230 of the third transfer device 51 is rotated around the horizontal axis while holding the wafer to be processed W, and the wafer to be processed W is inverted in the vertical direction. Then, wafer W is non-bonding surface W _N is transported to the inspection apparatus 7 again by the Bernoulli chuck 230 in a state facing upward, inspection of the non-bonding surface W _N is performed (step A6 in FIG. 13). When contamination of particles is confirmed on the non-bonding surface W _N , the wafer W to be processed is transferred to the non-bonding surface cleaning device 41 by the third transfer device 51, and the non-bonding surface W in the non-bonding surface cleaning device 41. _N is washed (step A7 in FIG. 13). Note that step A7 is the same as step A2 described above, and a description thereof will be omitted. For example, when it is confirmed that there is no residue of the adhesive G in the inspection device 7, the process A7 may be omitted.

  Next, the cleaned wafer W to be processed is transferred to the post-processing station 4 by the third transfer device 51. If no residue of the adhesive G is confirmed by the inspection apparatus 7, the wafer W to be processed is transferred to the post-processing station 4 without being transferred to the non-bonding surface cleaning apparatus 41.

  Thereafter, predetermined post-processing is performed on the wafer W to be processed in the post-processing station 4 (step A8 in FIG. 13). Thus, the processing target wafer W is commercialized.

On the other hand, wafer W with a peel defects from bonded wafer T including a defect, after bonding surface W _J is washed with step A2 and A3, it is conveyed to station 2 loading and unloading by the first transfer device 20 The Thereafter, the defective wafer W to be processed is unloaded from the loading / unloading station 2 and collected (step A9 in FIG. 13).

While the above-described steps A2 to A9 are performed on the processing target wafer W, the support wafer S peeled by the peeling device 30 is transferred to the second cleaning device 33 by the first transfer device 20. Then, in the second cleaning device 33, the adhesive on the joint surface S _J of the support wafer S is removed, the bonding surfaces S _J is cleaned (step A10 in FIG. 13). The cleaning of the support wafer S in the step A10 is the same as the removal of the adhesive G on the processing target wafer W in the above-described step A2, and thus the description thereof is omitted.

Thereafter, the support wafer S which joint surface S _J is cleaned is conveyed to station 2 loading and unloading by the first transfer device 20. Thereafter, the support wafer S is unloaded from the loading / unloading station 2 and collected (step A11 in FIG. 13). In this way, a series of separation processing of the processing target wafer W and the supporting wafer S is completed.

  According to the above embodiment, the wafer W to be processed held by the first holding unit 110 and the support wafer S held by the second holding unit 111 are heated at the first temperature by the heating mechanisms 124 and 142, respectively. While being heated, the second holding unit 111 is moved in the horizontal direction by the moving mechanism 150, and the processing target wafer W and the supporting wafer S are peeled off. And when peeling the to-be-processed wafer W and the support wafer S, the heating temperature of the hot plate | board area | region 120a-120e of the 1st holding | maintenance part 110 corresponding to the to-be-processed wafer exposed by peeling is higher than 1st temperature. Control to the second temperature. Similarly, the heating temperature of the hot plate regions 140a to 140e of the second holding unit 111 corresponding to the support wafer S exposed by peeling is controlled to a second temperature higher than the first temperature. Then, even if the exposed surfaces of the wafer to be processed W and the support wafer S are exposed to the surrounding processing atmosphere, the temperatures of the exposed surfaces of the wafer to be processed W and the support wafer S are set to the bonded wafer W to be processed. And the surface temperature of the support wafer S can be made the same. That is, the temperatures in the surfaces of the processing target wafer W and the supporting wafer S can be made uniform. Therefore, the load acting on the wafer to be processed W and the support wafer S during the peeling process can be made constant, and the peeling process between the wafer to be processed W and the support wafer can be appropriately performed.

  Further, the hot plate regions 120a to 120e of the first holding unit 110 and the hot plate regions 140a to 140e of the second holding unit 111 are partitioned along the moving direction of the second holding unit 111, so that they are exposed. The temperatures of the processed wafer W and the support wafer S can be controlled appropriately. Therefore, the temperatures in the surfaces of the processing target wafer W and the supporting wafer S can be made more uniform.

  In addition, since the first correlation and the second correlation are recorded in the temperature control units 125 and 143, respectively, the hot plate of the first holding unit 110 is based on the first correlation and the second correlation. The areas 120a to 120e and the hot plate areas 140a to 140e of the second holding part 111 can be easily controlled.

  According to the peeling system 1 of the above embodiment, after the superposed wafer T is peeled off from the processing target wafer W and the support wafer S in the peeling device 30, the peeled processing target wafer W is peeled off in the first cleaning device 31. In addition to cleaning, the second cleaning device 33 can clean the peeled support wafer S. As described above, according to the present embodiment, a series of stripping processes from the stripping of the processing target wafer W and the supporting wafer S to the cleaning of the processing target wafer W and the cleaning of the supporting wafer S can be efficiently performed in one stripping system 1. Can be done well. Further, in the first cleaning device 31 and the second cleaning device 33, the cleaning of the processing target wafer W and the cleaning of the support wafer S can be performed in parallel. Furthermore, while the wafer to be processed W and the support wafer S are peeled by the peeling apparatus 30, the other wafer to be processed W and the support wafer S can be processed by the first cleaning device 31 and the second cleaning device 33. . Therefore, the wafer W to be processed and the support wafer S can be efficiently peeled, and the throughput of the peeling process can be improved.

  Further, in this series of processes, the process from the separation of the wafer to be processed W and the support wafer S to the post-processing of the wafer to be processed W can be performed, so that the throughput of the wafer processing can be further improved.

  The hot plate regions 120a to 120e of the first holding unit 110 of the above embodiment are arranged in this order along the moving direction of the second holding unit 111, but the hot plate regions 120a to 120e are arranged in this order. The number and arrangement are not limited to this and can be arbitrarily set. Similarly, the number and arrangement of the hot plate regions 140a to 140e of the second holding unit 111 are not limited to this and can be arbitrarily set.

  In the above embodiment, the second holding unit 111 is moved in the vertical direction and the horizontal direction in the peeling device 30, but the first holding unit 110 may be moved in the vertical direction and the horizontal direction. Alternatively, both the first holding unit 110 and the second holding unit 111 may be moved in the vertical direction and the horizontal direction.

  In the peeling apparatus 30 described above, the second holding unit 111 is moved in the vertical direction and the horizontal direction. However, the second holding unit 111 is moved only in the horizontal direction, and the moving speed of the second holding unit 111 is increased. It may be changed. Specifically, the moving speed at the start of moving the second holding unit 111 may be reduced, and then the moving speed may be gradually accelerated. That is, when the second holding unit 111 starts to move, the bonding area between the processing target wafer W and the support wafer S is large, and the device on the processing target wafer W is easily affected by the adhesive G. The moving speed of the second holding unit 111 is lowered. Thereafter, as the bonding area between the wafer to be processed W and the support wafer S becomes smaller, the device on the wafer to be processed W becomes less susceptible to the adhesive G, so that the moving speed of the second holding unit 111 is gradually increased. To accelerate. Even in such a case, contact between the device and the support wafer S can be avoided, and damage to the device can be suppressed.

  Further, in the above embodiment, the second holding unit 111 is moved in the vertical direction and the horizontal direction in the peeling apparatus 30. For example, the distance between the device on the processing target wafer W and the support wafer S is as follows. If it is sufficiently large, the second holding part 111 may be moved only in the horizontal direction. In such a case, contact between the device and the support wafer S can be avoided, and movement of the second holding unit 111 can be easily controlled. Furthermore, the second holding unit 111 may be moved only in the vertical direction to peel off the processing target wafer W and the supporting wafer S.

In the peeling apparatus 30 of the above embodiment, a cover (not shown) that covers the processing space between the first holding unit 110 and the second holding unit 111 may be provided. In such a case, by the processing space an atmosphere of inert gas, suppress the wafer W even if heat treated, devices oxide film on the bonding surface W _J of the wafer W is formed can do.

Moreover, in the peeling apparatus 30 of the above embodiment, a porous plate (not shown) that can move in the horizontal direction following the second holding part 111 and supplies an inert gas from a plurality of holes. It may be provided. In such a case, when the second holding unit 111 is moved in order to peel the overlapped wafer T, the bonded surface of the wafer W to be processed exposed by peeling while moving the porous plate following the second holding unit 111. supplying an inert gas to W _J. Then, it is possible to prevent the wafer W even if heat treated, devices oxide film on the bonding surface W _J of wafer W is formed.

  In the peeling apparatus 30 of the above embodiment, the wafer to be processed W and the support wafer S are peeled in a state where the wafer to be processed W is disposed on the upper side and the support wafer S is disposed on the lower side. However, the vertical arrangement of the wafer W to be processed and the support wafer S may be reversed.

  In the above embodiment, the two-fluid nozzle is used as the cleaning liquid nozzle 202 of the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41. The form of the nozzle 202 is not limited to this embodiment, and various nozzles can be used. For example, as the cleaning liquid nozzle 202, a nozzle body in which a nozzle for supplying an organic solvent and a nozzle for supplying an inert gas are integrated, a spray nozzle, a jet nozzle, a megasonic nozzle, or the like may be used. In order to improve the throughput of the cleaning process, for example, a cleaning liquid heated to 80 ° C. may be supplied.

Further, in the first cleaning device 31, the second cleaning device 32, the bonding surface cleaning device 40, and the non-bonding surface cleaning device 41, a nozzle for supplying IPA (isopropyl alcohol) may be provided in addition to the cleaning liquid nozzle 202. Good. In this case, after cleaning the wafer W or the support wafer S with the cleaning liquid from the cleaning liquid nozzle 202, the cleaning liquid on the wafer W or the support wafer S is replaced with IPA. Then, the bonding surfaces W _J and S _{J of the} processing target wafer W or the support wafer S are more reliably cleaned.

  Further, the configuration of the inspection apparatus 7 is not limited to the configuration of the above embodiment. The inspection apparatus 7 can take various configurations as long as it can capture an image of the wafer W to be processed and inspect the presence or absence of the residue of the adhesive G and the residue of the oxide film on the wafer W to be processed.

  In the peeling system 1 of the above embodiment, a temperature adjusting device (not shown) for cooling the processing target wafer W heated by the peeling device 30 to a predetermined temperature may be provided. In such a case, the temperature of the wafer W to be processed is adjusted to an appropriate temperature, so that subsequent processing can be performed more smoothly.

  The superposed wafer T of the above embodiment may be provided with a protective member for suppressing damage to the superposed wafer T, for example, a dicing frame (not shown). The dicing frame is provided on the processing target wafer W side. Even after the wafer to be processed W is peeled from the support wafer S, the thinned wafer W to be processed is subjected to predetermined processing and conveyance while being protected by the dicing frame. Therefore, damage to the processing target wafer W after peeling can be suppressed.

  In the above embodiment, the case where the post-processing station 4 performs post-processing on the wafer to be processed W to produce a product has been described. It can also be applied to. The three-dimensional integration technology is a technology that meets the recent demand for higher integration of semiconductor devices. Instead of arranging a plurality of highly integrated semiconductor devices in a horizontal plane, This is a technique of three-dimensional lamination. Also in this three-dimensional integration technique, it is required to reduce the thickness of wafers to be processed, and the wafers to be processed are bonded to a support wafer to perform a predetermined process.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Peeling system 2 Carry-in / out station 3 Processing station 20 1st conveying apparatus 30 Peeling apparatus 31 1st washing | cleaning apparatus 32 2nd conveying apparatus 33 2nd washing | cleaning apparatus 110 1st holding | maintenance part 111 2nd holding | maintenance part 120 Hot plate 120a-120e Hot plate region 124 Heating mechanism 125 Temperature control unit 140 Hot plate 140a-140e Hot plate region 142 Heating mechanism 143 Temperature control unit 150 Moving mechanism 151 Vertical moving unit 152 Horizontal moving unit 350 Control unit G Adhesive S Support Wafer T Superposition wafer W Processed wafer

Claims (11)

A peeling apparatus for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate,
A first holding unit that includes a heating mechanism for heating the substrate to be processed and holds the substrate to be processed;
A second holding unit that includes a heating mechanism for heating the support substrate and holds the support substrate;
A moving mechanism that moves at least the first holding part or the second holding part in a relatively horizontal direction,
The first holding unit is partitioned into a plurality of regions, and the temperature can be set for each region.
The second holding unit is divided into a plurality of areas, and the temperature can be set for each of the areas. The plurality of regions of the first holding unit are partitioned along at least the moving direction of the first holding unit or the second holding unit,
2. The peeling apparatus according to claim 1, wherein the plurality of regions of the second holding unit are partitioned along at least a moving direction of the first holding unit or the second holding unit. A first correlation between a heat treatment temperature and a stripping treatment condition in a plurality of regions of the first holding unit;
3. The peeling apparatus according to claim 1, further comprising a control unit including a second correlation between a heat treatment temperature and a peeling treatment condition in a plurality of regions of the second holding unit. The peeling apparatus according to claim 3, wherein the peeling processing condition includes a type of the adhesive and a type of device formed on the substrate to be processed. It is a peeling system provided with the peeling apparatus in any one of Claims 1-4,
A processing station comprising: the peeling device; a first cleaning device that cleans the substrate to be processed peeled by the peeling device; and a second cleaning device that cleans the support substrate peeled by the peeling device. ,
A loading / unloading station for loading / unloading a substrate to be processed, a support substrate or a superposed substrate with respect to the processing station;
A peeling system comprising: a transfer device that transfers a substrate to be processed, a support substrate, or a superposed substrate between the processing station and the carry-in / out station. A peeling method for peeling a polymerization substrate in which a substrate to be processed and a support substrate are bonded with an adhesive, to the substrate to be processed and the support substrate,
The substrate to be processed held in the first holding unit is heated at the first temperature by the heating mechanism provided in the first holding unit, and the supporting substrate held in the second holding unit is heated in the second While being heated at the first temperature by the heating mechanism provided in the holding portion, at least the first holding portion or the second holding portion is moved in the horizontal direction relatively by the moving mechanism, and the substrate to be processed And peel off the support substrate,
The first holding unit is partitioned into a plurality of regions, and the temperature can be set for each of the regions. The second holding unit is partitioned into a plurality of regions, and the temperature can be set for each of the regions. ,
When peeling the substrate to be processed and the support substrate, the heat treatment temperature of the region of the first holding portion corresponding to the substrate to be exposed exposed by peeling is controlled to a second temperature higher than the first temperature. The peeling method characterized by controlling the heat treatment temperature of the region of the second holding portion corresponding to the support substrate exposed by peeling to the second temperature. The plurality of regions of the first holding unit are partitioned along at least the moving direction of the first holding unit or the second holding unit,
The peeling method according to claim 6, wherein the plurality of regions of the second holding part are partitioned along at least the moving direction of the first holding part or the second holding part. Control of the heat treatment temperature of the plurality of regions of the first holding unit is performed based on a first correlation between the heat treatment temperature and the stripping treatment conditions in the plurality of regions of the first holding unit,
Control of the heat treatment temperature of the plurality of regions of the second holding unit is performed based on a second correlation between the heat treatment temperature and the stripping treatment conditions in the plurality of regions of the second holding unit. The peeling method according to claim 6 or 7. The peeling method according to claim 8, wherein the peeling treatment condition includes a type of the adhesive and a type of device formed on the substrate to be processed. A program that operates on a computer of a control unit that controls the peeling device in order to cause the peeling device to execute the peeling method according to any one of claims 6 to 9. A readable computer storage medium storing the program according to claim 10.

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