JP2013069992A - 化合物半導体装置及びその製造方法 - Google Patents
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Abstract
【解決手段】化合物半導体装置の一態様には、基板1と、基板1上方に形成された電子走行層3及び電子供給層5と、電子供給層5上方に形成されたゲート電極11g、ソース電極11s及びドレイン電極11dと、電子供給層5とゲート電極11gとの間に形成されたp型半導体層8と、が含まれている。p型半導体層8に含まれるp型不純物として、少なくとも電子走行層3及び電子供給層5のいずれかを構成する元素と同種の元素が用いられている。
【選択図】図1
Description
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
次に、第2の実施形態について説明する。図3は、第2の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
次に、第3の実施形態について説明する。図4は、第3の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
次に、第4の実施形態について説明する。図5は、第4の実施形態に係る化合物半導体装置の構造を示す断面図である。
第5の実施形態は、GaN系HEMTを含む化合物半導体装置のディスクリートパッケージに関する。図7は、第5の実施形態に係るディスクリートパッケージを示す図である。
次に、第6の実施形態について説明する。第6の実施形態は、GaN系HEMTを含む化合物半導体装置を備えたPFC(Power Factor Correction)回路に関する。図8は、第6の実施形態に係るPFC回路を示す結線図である。
次に、第7の実施形態について説明する。第7の実施形態は、GaN系HEMTを含む化合物半導体装置を備えた電源装置に関する。図9は、第7の実施形態に係る電源装置を示す結線図である。
次に、第8の実施形態について説明する。第8の実施形態は、GaN系HEMTを含む化合物半導体装置を備えた高周波増幅器に関する。図10は、第8の実施形態に係る高周波増幅器を示す結線図である。
基板と、
前記基板上方に形成された電子走行層及び電子供給層と、
前記電子供給層上方に形成されたゲート電極、ソース電極及びドレイン電極と、
前記電子供給層と前記ゲート電極との間に形成されたp型半導体層と、
を有し、
前記p型半導体層に含まれるp型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素が用いられていることを特徴とする化合物半導体装置。
前記p型半導体層は、p型不純物を含有するSiC層であることを特徴とする付記1に記載の化合物半導体装置。
前記SiC層はアモルファス状態であることを特徴とする付記2に記載の化合物半導体装置。
前記p型不純物はAl又はGaであることを特徴とする付記1乃至3のいずれか1項に記載の化合物半導体装置。
前記電子供給層上方に形成され、少なくとも、前記ゲート電極と前記ソース電極との間、及び前記ゲート電極と前記ドレイン電極との間に位置するn型半導体層を有することを特徴とする付記1乃至4のいずれか1項に記載の化合物半導体装置。
前記n型半導体層に含まれるn型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素が用いられていることを特徴とする付記5に記載の化合物半導体装置。
前記n型半導体層に含まれるn型不純物はNであることを特徴とする付記5又は6に記載の化合物半導体装置。
前記ソース電極に接続された第2のp型不純物層と、
前記ドレイン電極に接続された第2のn型不純物層と、
を有するpn接合ダイオードを有し、
前記第2のp型半導体層に含まれるp型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素が用いられ、
前記第2のn型半導体層に含まれるn型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素が用いられていることを特徴とする付記1乃至7のいずれか1項に記載の化合物半導体装置。
付記1乃至8のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
付記1乃至8のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
基板上方に電子走行層及び電子供給層を形成する工程と、
前記電子供給層上方にp型半導体層を形成する工程と、
前記電子供給層上方の、平面視で前記p型半導体層を挟む位置にソース電極及びドレイン電極を形成する工程と、
前記p型半導体層上にゲート電極を形成する工程と、
を有し、
前記p型半導体層に含まれるp型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素を用いることを特徴とする化合物半導体装置の製造方法。
前記p型半導体層として、p型不純物を含有するSiC層を形成することを特徴とする付記11に記載の化合物半導体装置の製造方法。
前記SiC層はアモルファス状態であることを特徴とする付記12に記載の化合物半導体装置の製造方法。
前記p型不純物としてAl又はGaを用いることを特徴とする付記11乃至13のいずれか1項に記載の化合物半導体装置の製造方法。
前記電子供給層上方の、少なくとも、前記ゲート電極と前記ソース電極との間、及び前記ゲート電極と前記ドレイン電極との間にn型半導体層を形成する工程を有することを特徴とする付記11乃至14のいずれか1項に記載の化合物半導体装置の製造方法。
前記n型半導体層に含まれるn型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素を用いることを特徴とする付記15に記載の化合物半導体装置の製造方法。
前記n型半導体層に含まれるn型不純物としてNを用いることを特徴とする付記15又は16に記載の化合物半導体装置の製造方法。
前記ソース電極に接続された第2のp型不純物層と、前記ドレイン電極に接続された第2のn型不純物層と、を有するpn接合ダイオードを形成する工程を有し、
前記第2のp型半導体層に含まれるp型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素を用い、
前記第2のn型半導体層に含まれるn型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素を用いることを特徴とする付記11乃至17のいずれか1項に記載の化合物半導体装置の製造方法。
2:核形成層
3:電子走行層
4:スペーサ層
5:電子供給層
6:キャップ層
7:化合物半導体積層構造
8、38:p型半導体層
11g:ゲート電極
11s:ソース電極
11d:ドレイン電極
31、39:n型半導体層
Claims (10)
- 基板と、
前記基板上方に形成された電子走行層及び電子供給層と、
前記電子供給層上方に形成されたゲート電極、ソース電極及びドレイン電極と、
前記電子供給層と前記ゲート電極との間に形成されたp型半導体層と、
を有し、
前記p型半導体層に含まれるp型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素が用いられていることを特徴とする化合物半導体装置。 - 前記p型半導体層は、p型不純物を含有するSiC層であることを特徴とする請求項1に記載の化合物半導体装置。
- 前記SiC層はアモルファス状態であることを特徴とする請求項2に記載の化合物半導体装置。
- 前記p型不純物はAl又はGaであることを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。
- 前記電子供給層上方に形成され、少なくとも、前記ゲート電極と前記ソース電極との間、及び前記ゲート電極と前記ドレイン電極との間に位置するn型半導体層を有することを特徴とする請求項1乃至4のいずれか1項に記載の化合物半導体装置。
- 前記n型半導体層に含まれるn型不純物はNであることを特徴とする請求項5に記載の化合物半導体装置。
- 前記ソース電極に接続された第2のp型不純物層と、
前記ドレイン電極に接続された第2のn型不純物層と、
を有するpn接合ダイオードを有し、
前記第2のp型半導体層に含まれるp型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素が用いられ、
前記第2のn型半導体層に含まれるn型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素が用いられていることを特徴とする請求項1乃至6のいずれか1項に記載の化合物半導体装置。 - 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする電源装置。
- 請求項1乃至7のいずれか1項に記載の化合物半導体装置を有することを特徴とする高出力増幅器。
- 基板上方に電子走行層及び電子供給層を形成する工程と、
前記電子供給層上方にp型半導体層を形成する工程と、
前記電子供給層上方の、平面視で前記p型半導体層を挟む位置にソース電極及びドレイン電極を形成する工程と、
前記p型半導体層上にゲート電極を形成する工程と、
を有し、
前記p型半導体層に含まれるp型不純物として、少なくとも前記電子走行層及び前記電子供給層のいずれかを構成する元素と同種の元素を用いることを特徴とする化合物半導体装置の製造方法。
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US9590494B1 (en) | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
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US10630285B1 (en) | 2017-11-21 | 2020-04-21 | Transphorm Technology, Inc. | Switching circuits having drain connected ferrite beads |
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US10756207B2 (en) | 2018-10-12 | 2020-08-25 | Transphorm Technology, Inc. | Lateral III-nitride devices including a vertical gate module |
CN113826206A (zh) | 2019-03-21 | 2021-12-21 | 创世舫科技有限公司 | Iii-氮化物器件的集成设计 |
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US11749656B2 (en) | 2020-06-16 | 2023-09-05 | Transphorm Technology, Inc. | Module configurations for integrated III-Nitride devices |
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