JP2013011549A - Physical quantity sensor, electronic device, and manufacturing method of physical quantity sensor - Google Patents

Physical quantity sensor, electronic device, and manufacturing method of physical quantity sensor Download PDF

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JP2013011549A
JP2013011549A JP2011145365A JP2011145365A JP2013011549A JP 2013011549 A JP2013011549 A JP 2013011549A JP 2011145365 A JP2011145365 A JP 2011145365A JP 2011145365 A JP2011145365 A JP 2011145365A JP 2013011549 A JP2013011549 A JP 2013011549A
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part
physical quantity
sensor
base substrate
quantity sensor
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JP5811634B2 (en
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Tomonaga Kobayashi
知永 小林
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Seiko Epson Corp
セイコーエプソン株式会社
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Abstract

The present invention provides a physical quantity sensor capable of avoiding sticking between a base substrate and a sensor unit during manufacturing or the like while suppressing damage to the sensor unit and the base substrate, and a method for manufacturing the physical quantity sensor.
A physical quantity sensor (1) includes a base substrate (6) provided with a thin part (6a) and a thick part (6b), and a sensor part (4) disposed so as to be swingable above the thin part (6a) of the base substrate (6). The base substrate 6 is provided with conductive films 9 and 10 on at least a part of the thin part 6a that overlaps the end of the sensor part 4 in plan view, and the conductive films 9 and 10 are provided on the surface of the thick part 6b. It extends to at least a part of.
[Selection] Figure 2

Description

  The present invention relates to a physical quantity sensor, an electronic device using the physical quantity sensor, and a method for manufacturing the physical quantity sensor.

  Conventionally, a structure in which a movable electrode is supported by an elastic element such as a torsion spring is formed on a fixed part, and the movable electrode approaches or moves away from the fixed electrode according to an applied external force. 2. Description of the Related Art Capacitance sensors are known that can detect various physical quantities such as acceleration and angular velocity by detecting a change in capacitance between them.

  As such a capacitive sensor, a capacitive sensor configured to be able to detect a physical quantity in the vertical axis direction by a single mass portion that is displaced by a physical quantity such as acceleration is disclosed. (For example, refer to Patent Document 1).

  In prior art documents, the mass part is supported asymmetrically so as to break the balance of the center of gravity, and the acceleration is detected by detecting the change in capacitance due to the displacement of the position due to the rotation of the mass part according to the acceleration applied in the vertical direction. A possible accelerometer is disclosed. Such a capacitive sensor having a movable mechanism in which the mass portion is displaced has a configuration such that the mass portion is not damaged due to the collision between the mass portion and the substrate due to the displacement of the position. ing.

  In Patent Document 1, a concave portion is provided on a substrate on which the front end of the mass portion may collide by point contact or surface contact to avoid collision with the substrate due to displacement of the mass portion, and a stopper is provided on the substrate. Prevents mass collision.

In order to provide a recess on a substrate (for example, a glass substrate), for example, processing by sandblasting or the like is required. However, the processing by sandblasting has the disadvantage that the accuracy in the depth direction is lowered due to its characteristics, and the finished surface becomes rough.
Therefore, there is a possibility that the tip of the mass portion that contacts the recess formed by such processing may be damaged. In addition, the stopper provided on the substrate has a problem that it is likely to be displaced due to misalignment and has low reliability as a function of avoiding a collision.

  Therefore, in Patent Document 2, a countermeasure is proposed in view of the above-described actual situation. In the prior art cited in Patent Document 2, by providing the movable portion with a protrusion serving as a stopper, a structure in which the lower fixed electrode and the movable electrode are not structurally destroyed by a collision. I'm taking it.

US Pat. No. 6,935,175 JP 2007-298405 A

However, in the case of providing a protrusion as a stopper on the movable part as in the structure of Patent Document 2, a process of providing a protrusion is separate from the manufacturing process of the basic function of the capacitive sensor. There is a problem that the structure leads to an increase in cost.
Furthermore, this protrusion is a function limited only to preventing damage at the time of collision of the movable part, and does not have a function commensurate with the cost.
Accordingly, the present invention has been proposed in view of the above-described circumstances, and prevents the movable electrode from being damaged without incurring an increase in cost. Further, as an additional function, the movable portion is attached by charging during manufacturing or handling. It is an object of the present invention to provide a physical quantity sensor, an electronic device, and a method for manufacturing the physical quantity sensor that have a function of preventing sticking.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

  [Application Example 1] A physical quantity sensor according to this application example is provided with a thin portion and a thick portion, a base substrate provided above the thin portion of the base substrate, and swingable in the direction of the base substrate. The base substrate is provided with a conductive film on at least a part of the thin portion overlapping the end portion of the sensor portion in plan view, and the conductive film has the thickness It extends to at least a part of the surface of the part.

According to this application example, since the physical quantity sensor has a conductive film formed on the base substrate below the sensor unit, this functions as a protective film, and when the sensor unit collides with the base substrate, the sensor unit and the base It can suppress that a board | substrate is damaged.
In addition, since the physical quantity sensor has a conductive film formed on the thick part of the base substrate, in the process of manufacturing the physical quantity sensor, for example, when the base substrate and the sensor substrate to be the sensor part are anodic bonded. It is possible to avoid the electric charge generated during the anodic bonding from being released by the conductive film and sticking the base substrate and the sensor substrate.

  Application Example 2 In the physical quantity sensor according to the application example described above, it is preferable that glass is used for the base substrate and a semiconductor material is used for the sensor unit.

  According to this application example, the physical quantity sensor can easily perform insulation separation between the base substrate and the sensor unit because the base substrate has insulating properties.

  Application Example 3 In the physical quantity sensor according to the application example described above, the sensor unit is supported on the base substrate by a beam unit provided on a first axis, and the sensor unit is configured as a first part on the first axis. The first part is preferably heavier than the second part when divided into the second part.

According to this application example, since the first part of the sensor unit is heavier than the second part, the sensor unit is not applied to the first part and the second part, for example, is applied to the sensor part. The sensor unit can be efficiently rotated according to the acceleration as a physical quantity.
As a result, the physical quantity sensor can improve the detection sensitivity when applying acceleration, for example.

  Application Example 4 In the physical quantity sensor according to the application example, the sensor unit includes a movable electrode unit, and the thin portion of the base substrate has a fixed electrode unit at a position facing the movable electrode unit. It is preferably provided.

  According to this application example, the physical quantity sensor swings when a physical quantity (for example, acceleration) in a vertical direction (thickness direction) is applied to the main surface of the flat sensor part, for example. (Seesaw-like movement with the beam as a fulcrum). The physical quantity sensor can detect the physical quantity (for example, acceleration) from the change in capacitance caused by the gap (gap) between the movable electrode portion and the fixed electrode portion being displaced by the swing. It becomes possible.

  Application Example 5 In the physical quantity sensor according to the application example described above, a lid body that covers the sensor unit is provided on the base substrate, and the conductive film is interposed between the lid body and the base substrate. It is preferable.

  According to this application example, in the physical quantity sensor, since the conductive film is interposed between the lid and the base substrate, for example, charges generated when the lid and the base substrate are joined by anodic bonding or the like. Can be released by the conductive film, and the sensor part can be prevented from sticking to the lid.

  Application Example 6 An electronic apparatus according to this application example uses the physical quantity sensor described in any one of Application Examples 1 to 5.

  According to this application example, since the electronic apparatus having this configuration uses the physical quantity sensor described in any one of the application examples 1 to 5, it is possible to provide an electronic apparatus with excellent reliability.

  [Application Example 7] The physical quantity sensor manufacturing method according to this application example includes a step of preparing a glass substrate having a thin part and a thick part, and straddles the surface of the thin part and the thick part. Forming a conductive film on the substrate, placing a semiconductor substrate on the thick portion of the glass substrate, bonding the glass substrate and the semiconductor substrate by anodic bonding, and patterning the semiconductor substrate Forming a sensor portion, and in the step of placing the semiconductor substrate, the conductive film formed on the surface of the thick portion of the glass substrate is in contact with the semiconductor substrate. Features.

According to this application example, the physical quantity sensor manufacturing method can simultaneously form the fixed electrode portion and the conductive film functioning as a protective film for collision prevention on the glass substrate.
In addition, the physical quantity sensor manufacturing method can release the electric charge generated when the glass substrate and the semiconductor substrate are anodically bonded by the conductive film provided on the thick portion of the glass substrate, and the sensor portion and the base substrate are electrostatically It can prevent sticking by.

1 is a perspective view of a physical quantity sensor according to Embodiment 1. FIG. It is a plane sectional view of the physical quantity sensor of Drawing 1, (a) is a top view and (b) is a sectional view in an AA line of (a). Sectional drawing at the time of the drive of a physical quantity sensor. (A)-(e) is sectional drawing explaining the manufacturing method of a physical quantity sensor. (F)-(j) is sectional drawing explaining the manufacturing method of a physical quantity sensor. (K)-(m) is sectional drawing explaining the manufacturing method of a physical quantity sensor. It is sectional drawing explaining sticking of a sensor part, (a) is a prior art example, (b) is this embodiment example. FIG. 6 is a plan view of a physical quantity sensor according to a second embodiment. FIG. 6 is a perspective view of a physical quantity sensor according to a second embodiment. The perspective view of the electronic device (notebook type personal computer) using a physical quantity sensor. The perspective view of the electronic device (cellular phone) using a physical quantity sensor. The perspective view of the electronic device (digital still camera) using a physical quantity sensor.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the scale of each layer and each member is made different from the actual scale so that each layer and each member can be recognized.

(Embodiment 1)
[Configuration of physical quantity sensor]
First, the configuration of the physical quantity sensor according to the first embodiment will be described. This physical quantity sensor can detect various physical quantities such as acceleration and angular velocity in the Z-axis direction (thickness direction).
FIG. 1 is a perspective view of a physical quantity sensor according to the first embodiment. 2 is a plan sectional view of the physical quantity sensor of FIG. 1, in which (a) is a plan view and (b) is a sectional view taken along line AA of (a). In FIGS. 1 to 3, 8, and 9, the lid is omitted for convenience.

As shown in FIGS. 1 and 2, the physical quantity sensor 1 includes a base substrate 6 and a sensor unit 4.
The base substrate 6 includes a thin portion 6a at the center portion and a thick portion 6b at the outer peripheral portion. The fixed electrode portions 7 and 8 and the conductive films 9 and 10 are formed on the inner bottom of the thin portion 6a by, for example, a film forming process of a semiconductor process. The conductive films 9, 10 extend from the thin part 6a to at least part of the surface of the thick part 6b, and are formed so as to straddle the thin part 6a and the thick part 6b. In the perspective view and the plan view, the fixed electrode portions 7 and 8, the conductive films 9 and 10 and the wiring are hatched for convenience.
The base substrate 6 is made of an insulating material such as glass or a semiconductor material such as silicon.

The sensor unit 4 includes an anchor unit 2, a beam unit 3, and a slit unit 5. The anchor part 2 and the beam part 3 are formed integrally with the sensor part 4. The anchor part 2 is joined to the thick part 6b of the base substrate 6 described above. Thereby, the anchor part 2 is fixedly provided with respect to the base substrate 6.
The sensor unit 4 has a substantially rectangular shape (rectangular shape) extending in the X-axis direction. The shape of the sensor unit 4 is determined according to the shape, size, etc. of each unit constituting the sensor unit 4 and is not limited to the above-described shape. Although not shown, a movable electrode portion is provided on the principal surface facing the base substrate 6 among the principal surfaces (surface orthogonal to the Z axis) of the sensor portion 4 so as to face a fixed electrode portion described later. It has been.

Such a sensor part 4 is connected (supported) to the thick part 6b of the base substrate 6 via a pair of beam parts 3 extending in the Y-axis direction. More specifically, the long side of one side (+ Y direction side) of the sensor unit 4 is connected to the thick part 6b on the + Y direction side via the beam unit 3, and the other side (−Y direction side) of the sensor unit 4 ) Is connected to the -Y direction side thick part 6b through the beam part 3.
This beam part 3 is connecting the sensor part 4 with respect to the thick part 6b so that rotation is possible. In this embodiment, the beam part 3 is comprised so that the sensor part 4 can be rotated around the axis line B as a 1st axis | shaft extended in a Y-axis direction.
More specifically, each of the beam portions 3 is composed of a beam extending in the Y-axis direction. Further, for example, a pair of beam portions 3 is provided along the same line. Each of such beam portions 3 can be elastically twisted and deformed about an axis B extending in the Y-axis direction.
The beam unit 3 is not limited to this as long as the sensor unit 4 can be rotated about the axis B, and may be formed of, for example, two beams or be bent. You may be comprised with the beam.

As described above, the sensor unit 4 rotatably supported with respect to the base substrate 6 is viewed from the Z-axis direction (that is, viewed from the direction perpendicular to the main surface of the sensor unit 4, in other words, in plan view). ), The first portion 4A located on one side (−X direction side) and the second portion 4B located on the other side (+ X direction side) with respect to the axis B connecting the beam portions 3. .
The mass of the first portion 4A is heavier than the mass of the second portion 4B. 2B, the first portion 4A (movable electrode portion) of the sensor unit 4 is opposed to the fixed electrode unit 7 with a gap 12 therebetween. Further, the second portion 4B (movable electrode portion) of the sensor unit 4 is opposed to the fixed electrode unit 8 with a gap 13 therebetween.
Here, the axis B as the first axis divides the sensor unit 4 into the first part 4A and the second part 4B.

Moreover, in this embodiment, the planar view shapes of the fixed electrode portions 7 and 8 are each substantially rectangular. More specifically, the planar view shapes of the fixed electrode portions 7 and 8 are each a rectangle that is long in the Y-axis direction. The fixed electrode portions 7 and 8 have the same area.
The constituent materials of the fixed electrode portions 7 and 8 and the conductive films 9 and 10 are not particularly limited as long as they have conductivity, and various electrode materials can be used. Specifically, for example, oxides (transparent electrode materials) such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), In 3 O 3 , SnO 2 , Sb-containing SnO 2 , and Al-containing ZnO, Au, Pt , Ag, Cu, Al, or alloys containing these, and one or more of these can be used in combination.
A method for forming the fixed electrode portions 7 and 8 and the conductive films 9 and 10 (film formation method) is not particularly limited. And wet plating methods such as electroless plating, thermal spraying methods, and thin film bonding.

The sensor portion 4 is formed with a plurality of slit portions 5 penetrating in the thickness direction. Specifically, a plurality of slit portions 5 extending in the Y-axis direction are formed side by side in the X-axis direction in each of the first portion 4A and the second portion 4B described above.
Each of the internal spaces of the plurality of slit portions 5 serves as a flow path through which gas (for example, air) existing in the gap 12 or the gap 13 circulates from the lower side to the upper side when the sensor unit 4 rotates.
In this way, the physical quantity sensor 1 can release the gas present in the gap 12 or the gap 13 through the plurality of slit parts 5 when the sensor part 4 rotates. Thereby, the physical quantity sensor 1 can reduce the flow resistance of the gas existing in the gaps 12 and 13 when the sensor unit 4 rotates.
Therefore, even if the physical quantity sensor 1 sets the distance between the movable electrode part provided in the sensor part 4 and the fixed electrode parts 7 and 8 small, the sensor part 4 is displaced (rotated) by a desired quantity according to the physical quantity. ). As a result, the physical quantity sensor 1 can increase the sensitivity of physical quantity detection.

The physical quantity sensor 1 shown in FIGS. 1 and 2 is preferably formed by anodically bonding a sensor portion 4 made of a semiconductor material and a base substrate 6 made of glass. The base substrate 6 is formed with a concave portion composed of a thin portion 6a and a thick portion 6b, so that insulation and operability with the sensor portion 4 are ensured.
In addition, fixed electrode portions 7 and 8 and conductive films 9 and 10 are formed on the inner bottom of the concave portion of the base substrate 6. The fixed electrode portions 7 and 8 and the conductive films 9 and 10 are formed electrically independently from each other.

As shown in FIG. 2A, the sensor unit 4 is patterned (formed) in a substantially rectangular shape in plan view as a whole. The patterning of the base substrate 6 and the sensor unit 4 is performed by performing a vertical etching process such as reactive ion etching (RIE), for example, the inner wall surface of the recess of the base substrate 6, the side surface of the sensor unit 4, The inner surface of the slit part 5 is formed to be perpendicular to the main surface of the sensor part 4.
As the reactive ion etching, for example, a processing method using an etching apparatus provided with inductively coupled plasma (ICP) can be used.

The sensor unit 4 is fixed to the base substrate 6 side by the anchor unit 2 via the beam unit 3 and is electrically connected to the electrode wiring 15 provided on the base substrate 6 side. The fixed electrode portion 7 is electrically connected to the electrode wiring 14a provided on the base substrate 6 side, and the fixed electrode portion 8 is electrically connected to the electrode wiring 14b provided on the base substrate 6 side. Is done.
In addition, although the electrically conductive films 9 and 10 are formed in an island shape, the conductive films 9 and 10 may be drawn to the outside by an electrode wiring different from the electrode wirings 14a, 14b, and 15 and may be grounded, for example.

For example, after the thin part 6a and the thick part 6b are formed by wet etching, the base substrate 6 is formed by forming a metal film on the thin part 6a and the thick part 6b by sputtering, for example, and patterning is performed by wet etching. As a result, the fixed electrode portions 7 and 8 and the conductive films 9 and 10 are formed.
The conductive films 9 and 10 are provided at positions overlapping at least a part of both ends in the X-axis direction of the sensor unit 4 in plan view.

[Principle of physical quantity detection]
FIG. 3 is a cross-sectional view when the physical quantity sensor is driven, and shows a state where a physical quantity (for example, acceleration) is received in the Z-axis direction.
As shown in FIG. 3, for example, when the physical quantity sensor 1 receives an acceleration G in the + Z direction orthogonal to the main surface of the sensor unit 4, the sensor unit 4 rotates in a seesaw shape around the axis B due to inertial force, Inclined with respect to the base substrate 6. Specifically, in the physical quantity sensor 1, the first portion 4 </ b> A of the sensor unit 4 approaches the fixed electrode unit 7, and the second portion 4 </ b> B of the sensor unit 4 moves away from the fixed electrode unit 8.
At this time, since the gap 12 is reduced and the gap 13 is increased, the capacitance between the first portion 4A and the fixed electrode portion 7 is increased, and the gap between the second portion 4B and the fixed electrode portion 8 is increased. The capacitance becomes smaller.
Therefore, the physical quantity sensor 1 includes the electrostatic capacitance generated in the gap 12 between the first portion 4A and the fixed electrode portion 7 and the electrostatic capacitance generated in the gap 13 between the second portion 4B and the fixed electrode portion 8. Various physical quantities such as acceleration applied to the physical quantity sensor 1 can be detected by obtaining a voltage waveform obtained by CV conversion from the difference from the capacity.

  Such a capacitance can be obtained from the potentials of the movable electrode portion and the fixed electrode portions 7 and 8 formed in the sensor portion 4. As shown in FIGS. 1 and 2, a potential can be extracted from the sensor unit 4 by joining the anchor unit 2 to the electrode wiring 15 formed on the base substrate 6. On the other hand, a potential can be extracted from the fixed electrode portions 7 and 8 through electrode wirings 14 a and 14 b formed on the base substrate 6.

[Method of manufacturing physical quantity sensor]
Here, the manufacturing method of the physical quantity sensor 1 of the present embodiment will be described using (a) to (m) of FIGS. 4 to 6 which are cross-sectional views illustrating the manufacturing method of the physical quantity sensor.
First, as shown in FIG. 4A, a glass substrate 21 as a base substrate is prepared.
Next, as shown in FIG. 4B, a resist pattern 22 is applied to the glass substrate 21 and a resist patterning process is performed to etch a portion that later becomes a thin portion.
Next, as shown in FIG. 4 (c), the glass substrate 21 is etched, and as shown in FIG. 4 (d), the resist 22 is peeled, and the thin portion 6a and the thick portion 6b are formed on the glass substrate 21. Form.
Next, as shown in FIG. 4E, a conductive film 23 is formed on the entire surface of the glass substrate 21 by sputtering.

Next, as shown in FIG. 5 (f), a resist 24 is applied to the thin portion 6a and the thick portion 6b of the glass substrate 21, and resist patterning is performed in order to leave a portion that later becomes a fixed electrode portion and a conductive film. I do.
Next, as shown in FIG. 5G, the conductive film 23 is etched, and as shown in FIG. 5H, the resist 24 is peeled off, and the fixed electrode portions 7 and 8 and the conductive film are formed on the thin portion 6a. 9, 10 are formed, and the conductive films 9, 10 are also formed on the thick portion 6b so as to straddle the thin portion 6a and the thick portion 6b.
Next, as shown in FIG. 5I, a semiconductor substrate 25 for forming a sensor part in a later process is placed on the thick part 6b of the glass substrate 21, and the glass substrate 21 and the semiconductor substrate 25 are anodic bonded. To do.

Here, the sticking of the sensor unit will be described. FIGS. 7A and 7B are cross-sectional views for explaining attachment of the sensor unit, where FIG. 7A shows a conventional example and FIG. 7B shows an example of this embodiment.
As shown in FIG. 7A, in the conventional example, when the semiconductor substrate (corresponding to 25) is anodically bonded without a conductive film on the thick portion (corresponding to 6b) of the glass substrate (21), Electric charges accumulate on the glass substrate (21) side.
Thereafter, in the conventional example, when the sensor unit (corresponding to 4) is formed, a potential difference between the sensor unit (4) and the glass substrate (21) (for example, the sensor unit (4) has a positive potential, the glass substrate (21) ) Is -potential). Thereby, in the prior art, there was a problem that the movable part of the sensor part (4) would stick to the glass substrate (21).

On the other hand, as shown in FIG. 7B, in this embodiment, the glass substrate 21 and the semiconductor substrate in a state where the conductive films 9 and 10 formed on the thick portion 6b and the semiconductor substrate 25 are in contact with each other. 25 is anodically bonded.
Thereby, in this embodiment, the electric charge generated at the time of anodic bonding escapes to the semiconductor substrate 25 side through the conductive films 9 and 10. As a result, in this embodiment, it is possible to reduce the accumulation of charges during anodic bonding, and when the sensor unit 4 is formed, the sensor unit 4 and the glass substrate 21 have the same potential, and the movable part of the sensor unit 4 However, sticking to the glass substrate 21 can be avoided.

Returning to FIG. 5, next, as shown in FIG. 5 (j), a resist 26 is applied and patterned on the semiconductor substrate 25, and the semiconductor substrate 25 is etched as shown in FIG. 6 (k). As shown in FIG. 6 (l), the sensor part 4 is formed by peeling the resist 26.
Finally, as shown in FIG. 6 (m), a physical quantity sensor is obtained by bonding a lid 28 on a thick portion 6b of a glass substrate 21 (hereinafter also referred to as a base substrate 6) so as to cover the sensor portion 4. 1 is obtained.
The lid 28 is formed of, for example, a semiconductor substrate such as silicon, and is bonded to the base substrate 6 by anodic bonding. At this time, by interposing the conductive films 9 and 10 between the lid 28 and the base substrate 6, the charges generated when the lid 28 is joined can be released via the conductive films 9 and 10. Thereby, in this embodiment, since it can reduce that an electric charge accumulates at the time of anodic bonding, the charge of the cover body 28 can be prevented, for example, problems, such as adhesion of the foreign material to the cover body 28 by charging, can be avoided.

Returning to FIG. 2B, the recess provided in the base substrate 6 is a gap 12 between the first portion 4A (movable electrode portion) of the sensor portion 4 and the fixed electrode portion 7, which is a gap for detecting capacitance. In addition, the gap 13 between the second portion 4B (movable electrode portion) of the sensor unit 4 and the fixed electrode unit 8 is defined.
When the capacitance is C, the facing area is S, the distance between the detection gaps (gap 12 and gap 13) is d, and the dielectric constant is ε, the capacitance C is obtained by the following equation.
C = εS / d (1)
As can be seen from the equation (1), in order to increase the capacitance C, that is, to increase the detection sensitivity, it is necessary to shorten the distance of the detection gap considerably. Thereby, the sensor part 4 always has a possibility of colliding (contacting) with the fixed electrode parts 7 and 8 depending on the magnitude of the added physical quantity (for example, acceleration).

Therefore, as described above, in the physical quantity sensor 1 of the present embodiment, the conductive films 9 and 10 are provided next to the fixed electrode parts 7 and 8, and when an excessive physical quantity is applied, the sensor part 4 By interposing the conductive films 9 and 10 between the base substrate 6 and the base substrate 6, the conductive films 9 and 10 function as a protective film, and it is possible to suppress both from directly colliding and being damaged (see FIG. 3).
Further, in the physical quantity sensor 1, the conductive films 9 and 10 are also provided on the thick part 6 b of the base substrate 6, and the electric charges generated when the base substrate 6 and the semiconductor substrate 25 that becomes the sensor part 4 are joined are released. It also has a function. Thereby, the physical quantity sensor 1 can avoid sticking the base substrate 6 and the sensor part 4 in the manufacturing process or after manufacturing.
The conductive films 9 and 10 can further suppress damage to the sensor unit 4 and the base substrate 6 by using a relatively soft material.

Moreover, since the base substrate 6 is made of glass and has an insulating property, the physical quantity sensor 1 can easily perform the insulation separation between the base substrate 6 and the sensor unit 4.
Further, in the physical quantity sensor 1, since the first part 4A of the sensor unit 4 is heavier than the second part 4B, the sensor part 4 is not balanced between the first part 4A and the second part 4B. The sensor unit 4 can be efficiently rotated according to the acceleration as a physical quantity applied to the.
As a result, the physical quantity sensor 1 can improve the detection sensitivity when applying acceleration, for example.

Further, as described above, in the method of manufacturing the physical quantity sensor 1, the fixed electrode portions 7 and 8 and the conductive films 9 and 10 functioning as a protective film for preventing collision are simultaneously (collectively) formed on the glass substrate 21. can do. Thereby, the manufacturing method of the physical quantity sensor 1 can improve the productivity of the physical quantity sensor 1 compared with the case where the fixed electrode parts 7 and 8 and the electrically conductive films 9 and 10 are formed separately.
Moreover, the manufacturing method of the physical quantity sensor 1 can release the electric charge generated when the glass substrate 21 and the semiconductor substrate 25 are anodically bonded by the conductive films 9 and 10 provided in the thick portion 6b of the glass substrate 21, The sensor unit 4 (semiconductor substrate 25) and the base substrate 6 (glass substrate 21) can be prevented from sticking due to static electricity or the like.

The physical quantity sensor 1 is manufactured by interposing the conductive films 9 and 10 between the lid 28 and the base substrate 6 so that the charges generated during the anodic bonding of the lid 28 are passed through the conductive films 9 and 10. You can escape.
As a result, the manufacturing method of the physical quantity sensor 1 can reduce the accumulation of electric charges in the lid 28 when the lid 28 and the base substrate 6 are joined to each other. Therefore, the lid 28 can be prevented from being charged. Problems such as adhesion of foreign matter to the lid 28 can be avoided.

(Embodiment 2)
Next, the configuration of the physical quantity sensor according to the second embodiment will be described with reference to FIGS. The physical quantity sensor of Embodiment 2 is configured such that the conductive film of the physical quantity sensor of Embodiment 1 described above is electrically connected to the sensor unit.

  FIG. 8 is a plan view of the physical quantity sensor of the second embodiment, and FIG. 9 is a perspective view of the physical quantity sensor of the second embodiment. In addition, about the common part with Embodiment 1, the same code | symbol is attached | subjected, detailed description is abbreviate | omitted, and it demonstrates centering on a different part from Embodiment 1. FIG.

  As shown in FIGS. 8 and 9, the physical quantity sensor 101 according to the second embodiment includes conductive films 109 and 110 provided across the thin portion 6 a and the thick portion 6 b of the base substrate 6. The sensor part 4 is physically connected on the thick part 6b. Note that the method for forming the conductive films 109 and 110 and the patterning method are the same as those in the first embodiment, and thus detailed description thereof is omitted.

The conductive films 109 and 110 are formed and patterned at the same time (collectively) with the fixed electrode portions 7 and 8 provided on the thin portion 6 a of the base substrate 6, and are electrically independent from the fixed electrode portions 7 and 8. ing. The conductive films 109 and 110 are electrically connected to the sensor unit 4 by being physically connected to the sensor unit 4.
Specifically, the conductive film 109 is connected to the anchor part 2 on one side (−Y direction side) of the sensor unit 4 via the wiring 109a, and the conductive film 110 is connected to the other side (on the sensor part 4 via the wiring 110a). + Y direction side) is connected to the anchor portion 2.
The conductive films 109 and 110 and the sensor unit 4 can be easily connected by using a mask pattern having the same configuration as that for forming the electrode wiring 15 in the first embodiment when forming the wirings 109a and 110a.

As described above, in the physical quantity sensor 101 according to the present embodiment, since the conductive films 109 and 110 and the sensor unit 4 are electrically connected, the conductive films 109 and 110 and the sensor unit 4 have the same potential. be able to.
Thereby, in addition to the effects of the first embodiment, the physical quantity sensor 101 can reliably avoid sticking of the sensor unit 4 to the base substrate 6 due to charging during manufacture or handling.

(Electronics)
Next, an electronic device using the physical quantity sensor of each of the above embodiments will be described.
FIG. 10 is a perspective view illustrating a configuration of a mobile (or notebook) personal computer as an electronic apparatus using a physical quantity sensor.
As shown in FIG. 10, the personal computer 1100 includes a main body portion 1104 having a keyboard 1102 and a display unit 1106 having a display portion 100, and the display unit 1106 is connected to the main body portion 1104 via a hinge structure portion. And is rotatably supported.
Such a personal computer 1100 incorporates a physical quantity sensor 1.
The personal computer 1100 may incorporate a physical quantity sensor 101 instead of the physical quantity sensor 1.

FIG. 11 is a perspective view showing a configuration of a mobile phone (including PHS) as an electronic device using a physical quantity sensor.
As shown in FIG. 11, the mobile phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and the display unit 100 is disposed between the operation buttons 1202 and the earpiece 1204. .
Such a cellular phone 1200 incorporates a physical quantity sensor 1.
Note that the cellular phone 1200 may include the physical quantity sensor 101 instead of the physical quantity sensor 1.

FIG. 12 is a perspective view showing a configuration of a digital still camera as an electronic apparatus using a physical quantity sensor. In FIG. 12, connection with external devices is also shown in a simplified manner.
Here, a normal camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an image sensor such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.
A display unit 1310 is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to perform display based on an imaging signal from the CCD. The display unit 1310 displays a subject as an electronic image. Functions as a viewfinder.
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308.
In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. A television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication, if necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.
Such a digital still camera 1300 incorporates a physical quantity sensor 1.
The digital still camera 1300 may include a physical quantity sensor 101 instead of the physical quantity sensor 1.

Such an electronic device includes the physical quantity sensor 1 or the physical quantity sensor 101 excellent in high sensitivity and impact resistance, and thus has excellent reliability.
In addition to the personal computer (mobile personal computer) of FIG. 10, the mobile phone of FIG. 11, and the digital still camera of FIG. Printers), laptop personal computers, televisions, video cameras, video tape recorders, various navigation devices, pagers, electronic notebooks (including those with communication functions), electronic dictionaries, calculators, electronic game devices, word processors, workstations, videophones , Crime prevention TV monitor, electronic binoculars, POS terminal, medical equipment (for example, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish detector, various measuring devices, instruments (E.g., vehicle, navigation Aircraft, gauges of a ship), can be applied to a flight simulator.

  As mentioned above, although the physical quantity sensor of the present invention, the electronic device using the physical quantity sensor, and the manufacturing method of the physical quantity sensor were explained based on the illustrated embodiment, the present invention is not limited to these.

  DESCRIPTION OF SYMBOLS 1 ... Physical quantity sensor, 2 ... Anchor part, 3 ... Beam part, 4 ... Sensor part, 4A ... 1st part, 4B ... 2nd part, 5 ... Slit part, 6 ... Base substrate, 6a ... Thin part, 6b ... Meat Thick part, 7, 8 ... fixed electrode part, 9, 10 ... conductive film, 12, 13 ... gap, 14a, 14b, 15 ... electrode wiring, B ... axis as the first axis.

Claims (7)

  1. A base substrate provided with a thin part and a thick part;
    A sensor unit disposed above the thin portion of the base substrate and swingable in the direction of the base substrate;
    The base substrate is provided with a conductive film on at least a part of the thin portion that overlaps the end portion of the sensor portion in plan view,
    The physical quantity sensor, wherein the conductive film extends to at least a part of a surface of the thick part.
  2.   The physical quantity sensor according to claim 1, wherein glass is used for the base substrate, and a semiconductor material is used for the sensor unit.
  3. The sensor unit is supported on the base substrate by a beam unit provided on the first axis,
    3. The physical quantity according to claim 1, wherein when the sensor unit is divided into a first part and a second part along the first axis, the first part is heavier than the second part. sensor.
  4. The sensor part is provided with a movable electrode part,
    The physical quantity sensor according to claim 1, wherein a fixed electrode portion is provided at a position facing the movable electrode portion in the thin portion of the base substrate.
  5. On the base substrate, a lid that covers the sensor unit is provided,
    The physical quantity sensor according to claim 1, wherein the conductive film is interposed between the lid and the base substrate.
  6.   An electronic device using the physical quantity sensor according to claim 1.
  7. Preparing a glass substrate having a thin part and a thick part; and
    Forming a conductive film so as to straddle the thin part and the surface of the thick part;
    Placing a semiconductor substrate on the thick portion of the glass substrate;
    Bonding the glass substrate and the semiconductor substrate by anodic bonding;
    And patterning the semiconductor substrate to form a sensor part,
    In the step of placing the semiconductor substrate, the conductive film formed on the surface of the thick part of the glass substrate is in contact with the semiconductor substrate.
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JP2015021786A (en) * 2013-07-17 2015-02-02 セイコーエプソン株式会社 Functional element, electronic device, and mobile body
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