JP2012502486A - 安定したアモルファス金属酸化物半導体 - Google Patents
安定したアモルファス金属酸化物半導体 Download PDFInfo
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- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 156
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 152
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 239000005300 metallic glass Substances 0.000 title claims description 48
- 239000000203 mixture Substances 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000004891 communication Methods 0.000 claims abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000003786 synthesis reaction Methods 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 5
- 239000000395 magnesium oxide Substances 0.000 claims description 5
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052810 boron oxide Inorganic materials 0.000 claims description 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 4
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- AIRCTMFFNKZQPN-UHFFFAOYSA-N AlO Inorganic materials [Al]=O AIRCTMFFNKZQPN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (30)
- 半導体装置内で半導体として使用するための安定したアモルファス金属酸化物材料であって、前記材料は、アモルファス半導体イオン化金属酸化物とアモルファス絶縁共有結合金属酸化物との混合物を含むことを特徴とする安定したアモルファス金属酸化物材料。
- 前記アモルファス半導体イオン化金属酸化物は、前記アモルファス絶縁共有結合金属酸化物よりもはるかに多い量であることを特徴とする請求項1記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物の量は、前記アモルファス半導体イオン化金属酸化物が加工温度で多結晶になることを防止するのに充分であることを特徴とする請求項1記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物の量は、前記アモルファス半導体イオン化金属酸化物が約250°Cから約700°Cの範囲内の加工温度で多結晶になることを防止するのに充分であることを特徴とする請求項3記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物の量は、前記アモルファス半導体イオン化金属酸化物の連続的なネットワークを許容するために充分に少ないことを特徴とする請求項1記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス半導体イオン化金属酸化物の量は、前記混合物の約17%より多いことを特徴とする請求項5記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物は、前記混合物の約5%より多いことを特徴とする請求項5記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス半導体イオン化金属酸化物は、亜鉛酸化物、インジウム酸化物、スズ酸化物、ガリウム酸化物、カドミウム酸化物、および、それらの組合せのうちの1つを含むことを特徴とする請求項1記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物は、アルミニウム酸化物、シリコン酸化物、マグネシウム酸化物、ベリリウム酸化物、ホウ素酸化物、および、それらの組合せのうちの1つを含むことを特徴とする請求項1記載の安定したアモルファス金属酸化物材料。
- 前記混合物は、式XOaYObに従って、前記アモルファス半導体イオン化金属酸化物(XO)および前記アモルファス絶縁共有結合金属酸化物(YO)を少なくとも部分的に含み、「a」は前記合成混合物中の前記アモルファス半導体イオン化金属酸化物の量であり、「b」は前記合成混合物中の前記アモルファス絶縁共有結合金属酸化物の量であることを特徴とする請求項1記載の安定したアモルファス金属酸化物材料。
- 前記混合物は、式X−O−Yに従って、前記アモルファス半導体イオン化金属酸化物(XO)および前記アモルファス絶縁共有結合金属酸化物(YO)を少なくとも部分的に含み、前記アモルファス絶縁共有結合金属(X)および前記アモルファス半導体イオン化金属(Y)は、酸素によって原子結合を形成することを特徴とする請求項1記載の安定したアモルファス金属酸化物材料。
- アモルファス半導体イオン化金属酸化物とアモルファス絶縁共有結合金属酸化物との混合物を含む半導体層と、
前記半導体層と連絡するために配置され、かつ、導通チャネルを画定する1対の端子と、
前記導通チャネルと連絡し、かつ、前記チャネルの導通を制御するために配置されたゲート端子と、
から構成されることを特徴とする薄膜半導体装置。 - 前記アモルファス半導体イオン化金属酸化物は、前記のアモルファス絶縁共有結合金属酸化物よりもはるかに多い量であることを特徴とする請求項12記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス半導体イオン化金属酸化物の量は、前記混合物の約17%より多いことを特徴とする請求項13記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物の量は、前記アモルファス半導体イオン化金属酸化物が加工温度で多結晶になることを防止するのに充分であることを特徴とする請求項12記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物の量は、前記アモルファス半導体イオン化金属酸化物が約250°Cから約700°Cの範囲内の加工温度で多結晶になることを防止するのに充分であることを特徴とする請求項15記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物の量は、前記アモルファス半導体イオン化金属酸化物の連続的なネットワークを許容するために充分に少ないことを特徴とする請求項12記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物は、前記混合物の約5%より多いことを特徴とする請求項17記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス半導体イオン化金属酸化物は、亜鉛酸化物、インジウム酸化物、スズ酸化物、ガリウム酸化物、カドミウム酸化物、および、それらの組合せのうちの1つを含むことを特徴とする請求項12記載の安定したアモルファス金属酸化物材料。
- 前記アモルファス絶縁共有結合金属酸化物は、アルミニウム酸化物、シリコン酸化物、マグネシウム酸化物、ベリリウム酸化物、ホウ素酸化物、および、それらの組合せのうちの1つを含むことを特徴とする請求項12記載の安定したアモルファス金属酸化物材料。
- 前記混合物は、式XOaYObおよび式X−O−Yの1つによって表され、YOはアモルファス絶縁共有結合金属酸化物であり、XOはアモルファス半導体イオン化金属酸化物であり、また、「a」は前記合成混合物中の前記アモルファス半導体イオン化金属酸化物の量であり、「b」は前記合成混合物中の前記アモルファス絶縁共有結合金属酸化物の量であることを特徴とする請求項12記載の安定したアモルファス金属酸化物材料。
- 半導体装置内の半導体として使用するための安定したアモルファス金属酸化物材料の層を形成する方法であって、前記方法は、
基板上に、アモルファス半導体イオン化金属酸化物およびアモルファス絶縁共有結合金属酸化物の混合物を堆積する段階と、
前記堆積中に、窒素を使用して前記混合物のキャリヤ集中を制御する段階と、
から構成されることを特徴とする方法。 - 前記堆積する段階は、前記アモルファス絶縁共有結合金属酸化物の量よりもはるかに多い前記アモルファス半導体イオン化金属酸化物の量を堆積する段階を含むことを特徴とする請求項22記載の方法。
- 前記堆積する段階は、アモルファス半導体イオン化金属酸化物の量が、前記混合物の約17%より多い量を堆積する段階を含むことを特徴とする請求項23記載の方法。
- 前記堆積する段階は、前記アモルファス半導体イオン化金属酸化物が加工温度で多結晶になることを防止するのに充分な前記アモルファス絶縁共有結合金属酸化物の量を堆積する段階を含むことを特徴とする請求項23記載の方法。
- 前記堆積する段階は、前記アモルファス半導体イオン化金属酸化物が約250°Cから約700°Cの範囲内の温度で多結晶になることを防止するのに充分なアモルファス絶縁共有結合金属酸化物の量を堆積する段階を含むことを特徴とする請求項25記載の方法。
- 前記堆積する段階は、前記アモルファス半導体イオン化金属酸化物に連続的なネットワークを許容するために充分に少ないアモルファス絶縁共有結合金属酸化物の量を堆積する段階を含むことを特徴とする請求項22記載の方法。
- 前記堆積する段階は、前記混合物の約5%より多いアモルファス絶縁共有結合金属酸化物の量を堆積する段階を含むことを特徴とする請求項25記載の方法。
- 前記堆積する段階は、亜鉛酸化物、インジウム酸化物、スズ酸化物、ガリウム酸化物、カドミウム酸化物、および、それらの組合せのうちの1つを含むアモルファス半導体イオン化金属酸化物を堆積する段階を含むことを特徴とする請求項22記載の方法。
- 前記堆積する段階は、アルミニウム酸化物、シリコン酸化物、マグネシウム酸化物、ベリリウム酸化物、ホウ素酸化物、および、それらの組合せのうちの1つを含むアモルファス絶縁共有結合金属酸化物を堆積する段階を含むことを特徴とする請求項22記載の方法。
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US20160197139A1 (en) | 2016-07-07 |
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US9099563B2 (en) | 2015-08-04 |
CN102150247B (zh) | 2014-05-21 |
US9306078B2 (en) | 2016-04-05 |
WO2010028269A2 (en) | 2010-03-11 |
US8907336B2 (en) | 2014-12-09 |
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