JP2012253974A - Gate driving circuit - Google Patents

Gate driving circuit Download PDF

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Publication number
JP2012253974A
JP2012253974A JP2011126412A JP2011126412A JP2012253974A JP 2012253974 A JP2012253974 A JP 2012253974A JP 2011126412 A JP2011126412 A JP 2011126412A JP 2011126412 A JP2011126412 A JP 2011126412A JP 2012253974 A JP2012253974 A JP 2012253974A
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Prior art keywords
gate
resistor
circuit
gate terminal
semiconductor switch
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JP2011126412A
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Inventor
Takashi Kumagai
隆 熊谷
Taichiro Tamida
太一郎 民田
Ichigo Kurahashi
一豪 倉橋
Daisuke Takauchi
大輔 高内
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Mitsubishi Electric Corp
三菱電機株式会社
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Abstract

PROBLEM TO BE SOLVED: To provide a gate driving circuit that operates at high speed with a simple circuit configuration.SOLUTION: A gate driving circuit comprises: an NPN transistor for applying a positive voltage to a gate terminal of a power semiconductor element; a PNP transistor for applying a negative voltage to the gate terminal of the power semiconductor element; a blocking resistor connected in series to the NPN transistor and the PNP transistor; and a blocking-resistor switching semiconductor switch connected in parallel to the blocking resistor so that its positive electrode is located on the gate terminal side of the power semiconductor element.

Description

  The present invention relates to a gate drive circuit for driving a gate of a power semiconductor element.

  In the conventional power semiconductor element driving circuit, when switching the gate resistor inserted into the gate terminal of the power semiconductor element, the output part of the power semiconductor element driving circuit is connected in series with the gate terminal of the power semiconductor element. A gate resistor is configured by connecting two gate resistors in parallel or in series, and wiring to one of the gate resistors or both ends of one of the gate resistors is a gate resistor switch element. The gate resistor of the power semiconductor element is switched by turning on and off (for example, Patent Document 1).

  In the example of Patent Document 2 and FIG. 8, MOSFET (Metal Oxide Semiconductor) is used for both a semiconductor switch that applies a positive voltage to the gate terminal of the power semiconductor element and a semiconductor switch that applies a negative voltage to the gate terminal of the power semiconductor element. Field effect transistors), each of which consists of a gate resistor and a gate resistor switch element in series with a semiconductor switch that is driven by a signal with an inverted phase separately and applies a negative voltage to the gate terminal of the power semiconductor element. The gate resistor is switched using a variable resistance module.

  Such a gate drive circuit is mainly used for the purpose of suppressing a surge voltage by gently cutting off a current when an overcurrent of a power semiconductor element is cut off.

Japanese Patent Laying-Open No. 2003-274672 (FIG. 1) JP 2008-220119 A (FIGS. 2 and 8)

  In a circuit system such as Patent Document 1, when a MOSFET is used as a gate resistor switching element for switching a gate resistor, a high-speed gate resistor switching operation is possible, but a control signal voltage, that is, a MOSFET gate voltage is applied. In this case, it is necessary to design the power supply voltage of the drive circuit at a low voltage so that the gate voltage does not exceed the gate breakdown voltage of the MOSFET, and there is a problem that the output voltage of the drive circuit is lowered.

  In order to design the power supply voltage high so that the output voltage of the drive circuit does not decrease, it is necessary to provide a separate insulated power supply circuit for driving the gate resistor switch element, which complicates the circuit configuration. There was a problem.

  By using a bipolar transistor and base resistor for the gate resistor switch element, the problem of the breakdown voltage of the control terminal of the gate resistor switch element can be avoided, but parts for protecting the breakdown voltage of the control terminal must be added. In addition, there is a problem that the switching time of the gate resistor is delayed due to the accumulation time of the bipolar transistor.

  In the circuit system as in Patent Document 2, since a MOSFET is used as a switching element that applies a positive voltage to the gate terminal of the power semiconductor element, the output voltage of the power semiconductor element driving circuit is higher than the positive power supply voltage. There is a problem that only a voltage lower than the gate threshold voltage can be output.

  Further, in the circuit system as in Patent Document 2, another logic in which a switching element that applies a positive voltage to the gate terminal of the power semiconductor element and a switching element that applies a negative voltage to the gate terminal of the power semiconductor element are inverted. There is a problem that it is necessary to drive with a signal and the circuit becomes complicated.

  2 and 8 of Patent Document 2 are only schematic diagrams for explaining the circuit operation, and it is unclear how the parts indicated by the switch are configured. There was a problem that an insulated power supply was required.

  An object of the present invention is to provide a gate drive circuit that operates at high speed with a simple circuit configuration in order to solve the above-described problems.

  The present invention is a gate drive circuit for driving a gate terminal of a power semiconductor element that operates with a positive power supply and a negative power supply, and is connected in series with an NPN transistor that applies a positive voltage to the gate terminal, and an NPN transistor. A PNP transistor whose terminal is driven by a signal having the same logic as the base terminal of the NPN transistor, applies a negative voltage to the gate terminal, a gate resistor connected in series to the gate terminal, and a cutoff connected in series to the PNP transistor Resistor, a switching resistor switching semiconductor switch connected in parallel to the blocking resistor so that the positive electrode is on the gate terminal side of the power semiconductor device, and a current for detecting a current flowing in the main circuit of the power semiconductor device When the detection means and the current detected by the current detection means exceed a preset current value, switching the resistor for breaking A gate driver circuit which is characterized by comprising a control circuit for turning off the semiconductor switch.

  According to the present invention, it is possible to provide a gate drive circuit that operates at high speed with a simple circuit configuration.

1 is a circuit diagram showing a gate drive circuit according to a first embodiment of the present invention. It is a figure explaining operation | movement of the gate drive circuit which concerns on Embodiment 1 of this invention. It is a figure for demonstrating the effect of the gate drive circuit which concerns on Embodiment 1 of this invention.

Embodiment 1 FIG.
FIG. 1 is an example of a circuit diagram showing a gate drive circuit according to the first embodiment, and a circuit showing a state in which a gate drive circuit according to the present invention and a gate-driven IGBT (Insulated Gate Bipolar Transistor) 12 are connected. FIG. In the figure, Vdd1 is a positive power source for operating the gate drive circuit, Vss3 is a negative power source, and common potential 2 is a common potential of the positive power source Vdd1 and the negative power source Vss3. Normally, in the case of an IGBT gate drive circuit, a voltage of 15V is used for the positive power supply Vdd1, and a voltage of 10-15V is used for the negative power supply Vss3.

  The input terminal 4 is an input terminal Vin for inputting a signal to the gate drive circuit. The positive side base resistor 5 connected to the base of the NPN transistor 6 through one end of the AND circuit 16 and the PNP transistor 8 Each is connected to a negative base resistor 7 connected to the base.

  Further, the gate resistor 11 is connected in series to the gate of the IGBT 12 and limits the gate current when the IGBT 12 is on and off. The blocking resistor 9 is connected in series between the emitter terminal of the NPN transistor 6 and the emitter terminal of the PNP transistor 8 and limits the gate current when the IGBT 12 driven by the gate drive circuit is abnormally blocked.

  The breaking resistor switching semiconductor switch 10 is connected in parallel with the breaking resistor 9 and has a function of bypassing the gate current by turning on except when the IGBT 12 is cut off.

  Further, the drive circuit 13 outputs and drives the gate voltage Vgs of the switching resistor switching semiconductor switch 10, the power supply vc of the drive circuit 13 is set to the common potential 2, and the ground G of the drive circuit 13 is a negative power supply. Connected to Vss3.

  Further, the current detector 14 detects the emitter current Ice that flows through the IGBT 12 and outputs the detected emitter current Ice to the control circuit 15 as a signal vs.

  Further, the control circuit 15 receives the signal vs from the current detector 14, outputs voc 2 to the drive circuit 13, and outputs voc 1 to the AND circuit 16.

  Next, the circuit operation of the present embodiment will be described. FIG. 2 is a diagram for explaining the operation of the gate drive circuit according to the first embodiment. Specifically, FIG. 2 is a timing chart showing voltages at various parts for explaining the operation of the gate drive circuit.

  Vin is an input voltage applied to the input terminal 4 of the gate drive circuit, Ice is an emitter current of the IGBT 12, voc2 (= vg) is output from the control circuit 15, and is a drive signal for the switching gate resistance switching semiconductor switch 10, voc1 Is an enable signal for turning on / off the input signal of the gate drive circuit output from the control circuit 15, Vb is a base signal for driving the NPN transistor 6 and the PNP transistor 8, and Vgs is a gate voltage of the switching resistor switching semiconductor switch 10. , Vge indicates a gate voltage for driving the IGBT 12, and Vce indicates a collector-emitter voltage of the IGBT 12.

  Based on the timing chart of FIG. Time t1 indicates the timing when the IGBT 12 is turned on during normal operation.

  During normal operation, the outputs of the control circuit 15, voc 1 and voc 2 are both at a high level, a high level is input to one end of the AND circuit 16, and Vb is transmitted along with the input of Vin. A high level is also input to the drive circuit 13, and the gate potential Vg of the breaking resistor switching semiconductor switch 10 is at a high level, that is, a common potential.

  Therefore, at time t1, the NPN transistor 6 is turned on and the PNP transistor 8 is turned off, so that Vge = Vdd1 of the IGBT 12 and the charge is rapidly supplied to the gate terminal of the IGBT 12 via the NPN transistor 6 and the gate resistor 11. Charged, the IGBT 12 is turned on at high speed.

  Further, Vgs of the breaking resistor switching semiconductor switch 10 becomes −Vdd1, and the breaking resistor switching semiconductor switch 10 is turned off. This state continues until time t2.

  Time t2 indicates the timing at which the IGBT 12 is turned off during normal operation. The protruding waveform of Vce at time t2 represents the state of surge voltage due to the interruption of Ice flowing through the IGBT 12.

  At time t2, Vin becomes low level and is not input, so Vb also becomes low level. Therefore, the NPN transistor 6 is turned off and the PNP transistor 8 is turned on, so that Vge of the IGBT 12 becomes −Vss3, Vgs of the switching resistor switching semiconductor switch 10 becomes Vgs = Vss3, and the switching resistor switching semiconductor switch 10 becomes Is on.

  The charge of the gate of the IGBT 12 is rapidly discharged through the gate resistor 11, the blocking resistor switching semiconductor switch 10 and the PNP transistor 8, and the IGBT 12 is turned off at high speed. This state continues until time t3.

  The time t3 is the on-timing of the IGBT 12 during the normal operation, as is the case with the time t1, and will not be described.

  Time t4 represents the time when the emitter current Ice of the IGBT 12 starts to increase due to some abnormal operation. At this time t4, there is no change in the operation of the gate drive circuit that controls the IGBT 12.

  Ice increases with time, and at time t5 when Ice detected by the current detector 14 reaches the value preset in the control circuit 15, Ices, the control circuit 15 outputs a low level to the output voc2. . Note that Ices is set to about 1.5 to 2 times the Ice during normal operation.

  At this time t5, Vb is at a high level, the NPN transistor 6 is turned on, and an ON command is continuously transmitted to Vge of the IGBT 12, and Vge = Vdd1, so that the resistor switching semiconductor switch 10 for breaking is switched The gate potential Vg is a common potential, Vgs is Vss3, and the breaking resistor switching semiconductor switch 10 is turned off.

  At this time, Vdd1 is applied to the drain terminal of the breaking resistor switching semiconductor switch 10, and the gate potential Vg of the breaking resistor switching semiconductor switch 10 is -Vss3. A voltage equal to or higher than Vss3 is not applied to Vgs, and the series voltage of Vdd1 and Vss3 is applied to Vdg of the switching resistor switching semiconductor switch 10.

  The time preset by the control circuit 15 elapses from the time t5, and when the time t6 is reached, the control circuit 15 outputs a low level to the output voc1. As a result, one end of the AND circuit 16 becomes a low level, the signal transmission of Vb is cut off, the NPN transistor 6 is turned off, and the PNP transistor 8 is turned on.

  The previously set time, that is, the time from time t5 to time t6, is a time set based on a delay time until the turning-off of the breaking resistor switching semiconductor switch 10 is determined. , 50 nsec to 500 nsec.

  The gate charge of the IGBT 12 is discharged through the gate resistor 11, the blocking resistor 9, and the PNP transistor 8. However, since the blocking resistor 9 is inserted in series, the discharge of the gate charge is slow. Vge gradually decreases from time t6 to time t7. This cut-off time, time t7-time t6, becomes slower than the cut-off time at time t2, that is, the IGBT 12 is soft cut off.

  Ice increases from Ices to Icep depending on the circuit operation delay time after time t5 and the delay time of the soft cutoff of the IGBT 12, but thereafter decreases with the cutoff of the IGBT 12. Since the current is interrupted by Icep having a larger current value than Ice during normal operation, the surge voltage of Vce also increases, but is suppressed by soft cutoff and becomes Vcep. The Vce voltage when the IGBT 12 is cut off at the same speed as in the normal operation is as indicated by a broken line Vcebk in the figure.

  As described above, the NPN transistor 6 for applying a positive voltage to the gate terminal of the IGBT 12, the PNP transistor 8 for applying a negative voltage to the gate terminal of the IGBT 12, and the gate resistance connected in series to the gate terminal of the IGBT 12. Is connected in parallel to the breaker resistor 9 connected in series to the capacitor 11, the NPN transistor 6 and the PNP transistor 8, and the breaker resistor 9 so that the positive electrode is on the gate terminal side of the power semiconductor element. In addition, the configuration in which the switching resistor switching semiconductor switch 10 is provided can drive the transistor for applying a positive / negative voltage to the gate terminal of the IGBT 12 with one signal without requiring a special driving circuit. At the same time, in the soft cutoff operation at the time of an overcurrent abnormality, the soft cutoff operation can be switched at high speed.

  FIG. 3 is a diagram for explaining the effect of the gate drive circuit according to the first embodiment, which is a circuit diagram different from FIG. 1 and shows an example in which a method equivalent to the circuit of Reference 1 is embodied. FIG. In the figure, two gate resistors connected in series to the gate terminal of the IGBT 12a are composed of a gate resistor 11a and a gate resistor 11b in series, and in parallel with one of the gate resistors 11a, a gate resistor switching semiconductor is formed. The example which provided switch 10a is shown. In the circuit of Reference 1, gate resistors are arranged in parallel, but the example of FIG. 3 shows a more general series example. In FIG. 3, a suffix such as “a” is added to the reference number, but it corresponds to a constituent member having a numerical number excluding the suffix “a” or the like.

  In such a circuit, since the voltage Vdd1a of the source terminal of the gate resistor switching semiconductor switch 10a varies from Vdd1a to Vss3a, the voltage Vgs of the gate resistor switching semiconductor switch 10a is applied with a voltage of -Vdd1a-Vss3a depending on the operating state. The

  As described above, since a voltage of 15 V is used for Vdd and a voltage of 10 to 15 V is used for Vss, −25 to 30 V is applied to Vgs of the gate resistor switching semiconductor switch 10 a.

  When a MOSFET is used for the gate resistor switching semiconductor switch 10a, the Vgs withstand voltage of a general MOSFET is 20 to 30V, and the drive circuit for the gate terminal voltage vg of the gate resistor switching semiconductor switch 10a is operated based on Vss3. However, the power source for the drive circuit requires an insulated power source, and there is a problem that the circuit configuration becomes complicated. Since the circuit configuration is complicated, the cost is high. Further, when the IGBT 12 is turned on, the body diode of the MOSFET is inserted in series in the path for charging the gate charge of the IGBT 12, and there is a possibility that the performance of the gate drive circuit is impaired.

  Although a method of using a bipolar transistor for the gate resistor switching semiconductor switch 10a is also conceivable, a reverse conducting diode must be used in parallel, and a diode is inserted in series in a path for charging the gate charge of the IGBT 12, and a gate drive circuit In addition to impairing the performance, there is a problem that reverse voltage withstand protection of the base voltage is required. Further, since the bipolar transistor has an accumulation time when it is off, the off-speed of the gate resistor switching semiconductor switch 10a becomes slow, the delay time from time t6 to time t5 becomes long, and the peak of the emitter current of the IGBT 12 at the time of soft cutoff. There was a problem that the value Icep increased.

  In the present invention, since the Vgs of the breaking resistor switching semiconductor switch 10 for switching the breaking resistor 9 necessary for the soft breaking operation is equal to or lower than Vss3 which is the negative power source of the gate drive circuit, a general MOSFET is used. Thus, a gate driving circuit having a soft cutoff function with a short delay time can be obtained with a simple circuit configuration. In addition, since the diode is not inserted in series in the path for charging the gate charge of the IGBT 12, the IGBT 12 can be turned on at high speed.

  In this embodiment, the example in which the breaking resistor 9 and the breaking resistor switching semiconductor switch 10 are connected to the emitter terminal of the PNP transistor 8 has been described. However, the breaking resistor 9 and the breaking resistor switching semiconductor are described. Even if the switch 10 is inserted on the collector terminal side of the PNP transistor 8, the same effect can be obtained.

  In the present embodiment, the example in which the gate resistor 11 is connected in series to the gate terminal of the IGBT 12 has been described. However, the gate resistor 11 may be inserted in series in the NPN transistor 6.

  In the present embodiment, an example is shown in which the current detector 14 is inserted into the emitter terminal of the IGBT 12 in order to detect Ice, which is the main circuit current of the IGBT 12. However, in addition to being inserted into the collector terminal, the Ice 12 of the IGBT 12 is also inserted. The current detector 14 may be inserted at any location where the current corresponding to the current can be detected.

  Further, an N-channel MOSFET may be used for the NPN transistor 6. Further, a P-channel MOSFET may be used for the PNP transistor 8. However, in this case, the output voltage of the gate drive circuit is slightly lower than when the NPN transistor and the PNP transistor are used.

  In the present embodiment, an example in which a MOSFET is used as the breaking resistor switching semiconductor switch 10 is shown. However, a semiconductor switch such as an NPN transistor may be used. However, when an NPN transistor is used, it is necessary to use a reverse voltage protection circuit for the base terminal, a base current limiting resistor, or the like.

  Further, in the present embodiment, after detecting Ices, after the breaking resistor switching semiconductor switch 10 is surely turned off, the example in which Vb is set to low level and the output of the gate drive circuit is set to low level is shown. If the operation delay time of the circuit 13 and the operation delay time of the breaking resistor switching semiconductor switch 10 are shorter than the operation delay time between the AND circuit 16 and the NPN transistor 6 and the PNP transistor 8, the output voc2 of the control circuit voc1 may be at the same timing.

  In the present embodiment, the case where the drive target is an IGBT has been described. However, the same effect can be obtained even with an insulated gate power semiconductor element such as a MOSFET.

  As described above, a gate driving circuit that drives the gate terminal of a power semiconductor element that operates with a positive power source and a negative power source, the NPN transistor that applies a positive voltage to the gate terminal, and the NPN transistor connected in series, The base terminal is driven by a signal having the same logic as the base terminal of the NPN transistor, a PNP transistor that applies a negative voltage to the gate terminal, a gate resistor connected in series to the gate terminal, and a PNP transistor connected in series Detecting the current flowing through the main circuit of the power semiconductor element, the resistor for switching, the switching resistor switching circuit connected in parallel with the resistor for blocking so that the positive electrode is on the gate terminal side of the power semiconductor element When the current detection means and the current detected by the current detection means exceed a preset current value, Since the gate drive circuit and a control circuit for turning off the example semiconductor switch, a simple circuit configuration, it is to provide a gate driving circuit which operates at high speed.

  A gate driving circuit for driving a gate terminal of a power semiconductor element that operates with a positive power source and a negative power source, the N-channel MOSFET for applying a positive voltage to the gate terminal, and an N-channel MOSFET connected in series, A P-channel transistor whose terminal is driven by a signal having the same logic as the base terminal of the N-channel MOSFET and applies a negative voltage to the gate terminal, a gate resistor connected in series to the gate terminal, and a P-channel transistor connected in series A switching resistor, a switching resistor switching semiconductor switch connected in parallel with the blocking resistor so that the positive electrode is on the gate terminal side of the power semiconductor element, and a current flowing through the main circuit of the power semiconductor element If the current detection means to detect and the current detected by the current detection means exceeds a preset current value, the current detection means Since the gate drive circuit and a control circuit for turning off the use resistor switching semiconductor switch, a simple circuit configuration, it is to provide a gate driving circuit which operates at high speed.

  Further, an NPN transistor for applying a positive voltage to the gate terminal of the power semiconductor element, a PNP transistor for applying a negative voltage to the gate terminal of the power semiconductor element, an NPN transistor, and a PNP transistor are connected in series. Since the breaking resistor and the breaking resistor are provided with a breaking resistor switching semiconductor switch connected in parallel so that the positive electrode is on the gate terminal side of the power semiconductor element, The gate resistor, that is, the voltage at the control terminal of the switching resistor switching semiconductor switch element for switching the breaking resistor can be set without depending on the voltage of the positive power supply of the gate drive circuit, so the positive power supply of the gate drive circuit Can be realized at a high voltage suitable for the control terminal of the power semiconductor element. At a sufficiently low voltage than the breakdown voltage of the control terminal of the resistor dexterity switching element can drive the gate resistance dexterity switching element.

  In addition, since the NPN transistor and the PNP transistor can be driven with the same potential or the same logic, the NPN transistor and the PNP transistor can be driven without a special level shift circuit or a logic inversion circuit, and can be simply and highly reliable. The gate drive circuit can be configured.

  1 positive power supply Vdd, 2 common potential, 3 negative power supply Vss, 4 input terminal, 5 positive base resistor, 6 NPN transistor, 7 negative base resistor, 8 PNP transistor, 9 shutoff resistor, 10 shutoff resistor Switch semiconductor switch, 11 gate resistor, 12 IGBT, 13 drive circuit, 14 current detector, 15 control circuit, 16 AND circuit.

Claims (3)

  1. A gate driving circuit for driving a gate terminal of a power semiconductor element that operates with a positive power source and a negative power source,
    An NPN transistor for applying a positive voltage to the gate terminal;
    A PNP transistor connected in series to the NPN transistor, a base terminal driven by a signal having the same logic as the base terminal of the NPN transistor, and applying a negative voltage to the gate terminal;
    A gate resistor connected in series to the gate terminal;
    A blocking resistor connected in series with the PNP transistor;
    A switching resistor switching semiconductor switch connected in parallel to the blocking resistor so that the positive electrode is on the gate terminal side of the power semiconductor element;
    Current detection means for detecting a current flowing in the main circuit of the power semiconductor element;
    A gate drive circuit comprising: a control circuit for turning off the breaking resistor switching semiconductor switch when the current detected by the current detection means exceeds a preset current value.
  2. A gate driving circuit for driving a gate terminal of a power semiconductor element that operates with a positive power source and a negative power source,
    An N-channel MOSFET for applying a positive voltage to the gate terminal;
    A P-channel transistor connected in series to the N-channel MOSFET, a base terminal driven by a signal having the same logic as the base terminal of the N-channel MOSFET, and applying a negative voltage to the gate terminal;
    A gate resistor connected in series to the gate terminal;
    A blocking resistor connected in series with the P-channel transistor;
    A switching resistor switching semiconductor switch connected in parallel to the blocking resistor so that the positive electrode is on the gate terminal side of the power semiconductor element;
    Current detection means for detecting a current flowing in the main circuit of the power semiconductor element;
    A gate drive circuit comprising: a control circuit for turning off the breaking resistor switching semiconductor switch when the current detected by the current detection means exceeds a preset current value.
  3. The positive power source of the driving circuit of the switching resistor switching semiconductor switch is the ground potential of the power source of the gate driving circuit,
    3. The gate drive circuit according to claim 1, wherein the negative power source of the drive circuit of the switching resistor switching semiconductor switch is a negative power source of the power source of the gate drive circuit. 4.
JP2011126412A 2011-06-06 2011-06-06 Gate driving circuit Pending JP2012253974A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793824B2 (en) 2014-09-05 2017-10-17 Kabushiki Kaisha Toshiba Gate driving circuit, semiconductor device, and power conversion device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003079129A (en) * 2001-09-04 2003-03-14 Hitachi Ltd Gate drive circuit and power converter using the same
JP2003284318A (en) * 2002-01-17 2003-10-03 Mitsubishi Electric Corp Drive circuit for power semiconductor element
JPWO2009004715A1 (en) * 2007-07-03 2010-08-26 三菱電機株式会社 Power element drive circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003079129A (en) * 2001-09-04 2003-03-14 Hitachi Ltd Gate drive circuit and power converter using the same
JP2003284318A (en) * 2002-01-17 2003-10-03 Mitsubishi Electric Corp Drive circuit for power semiconductor element
JPWO2009004715A1 (en) * 2007-07-03 2010-08-26 三菱電機株式会社 Power element drive circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793824B2 (en) 2014-09-05 2017-10-17 Kabushiki Kaisha Toshiba Gate driving circuit, semiconductor device, and power conversion device

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