JP2012227292A - Led基板の製造方法 - Google Patents
Led基板の製造方法 Download PDFInfo
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- JP2012227292A JP2012227292A JP2011092523A JP2011092523A JP2012227292A JP 2012227292 A JP2012227292 A JP 2012227292A JP 2011092523 A JP2011092523 A JP 2011092523A JP 2011092523 A JP2011092523 A JP 2011092523A JP 2012227292 A JP2012227292 A JP 2012227292A
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- silicone resin
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- 239000000758 substrate Substances 0.000 title claims abstract description 118
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 229920002050 silicone resin Polymers 0.000 claims abstract description 82
- 239000004020 conductor Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000002245 particle Substances 0.000 claims abstract description 62
- 230000001681 protective effect Effects 0.000 claims description 29
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000005422 blasting Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 16
- 239000006061 abrasive grain Substances 0.000 claims description 13
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 32
- 238000012545 processing Methods 0.000 abstract description 5
- 238000011161 development Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 32
- 229920005989 resin Polymers 0.000 description 31
- 239000011347 resin Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 13
- 238000007747 plating Methods 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 11
- 238000007772 electroless plating Methods 0.000 description 9
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000003365 glass fiber Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000012779 reinforcing material Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- OMIHGPLIXGGMJB-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2OC2=C1 OMIHGPLIXGGMJB-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】LED基板の製造方法が、基材に導体層を形成すること(ステップS12)と、導体層を有する基材に、導体層を覆い反射材粒子を含有するシリコーン樹脂層を形成すること(ステップS14)と、レーザ光の照射により、シリコーン樹脂層に開口部を形成すること(ステップS16)と、ブラスト処理により、シリコーン樹脂層の開口部に残った残留物を除去すること(ステップS17)と、を含む。
【選択図】図3
Description
基材に導体層を形成することと、
前記導体層を有する基材に、前記導体層を覆い反射材粒子を含有するシリコーン樹脂層を形成することと、
レーザ光の照射により、前記シリコーン樹脂層に開口部を形成することと、
ブラスト処理により、前記シリコーン樹脂層の開口部に残った残留物を除去することと、
を含む。
10b フィルド導体
11 反射材粒子を含有するシリコーン樹脂層
11a 開口部
21 導体層
21a 耐食層
21c 配線パターン
21d 配線パターン
100 LED基板
200 LED素子
200a 半田
1000 発光モジュール
1001 導体層
1002 エッチングレジスト
1002a 開口部
1003 保護フィルム
1004 残留物
1005 遮光マスク
1005a 開口部
2001 膜
2002 めっきレジスト
2002a 開口部
2003 電解めっき
Claims (13)
- 基材に導体層を形成することと、
前記導体層を有する基材に、前記導体層を覆い反射材粒子を含有するシリコーン樹脂層を形成することと、
レーザ光の照射により、前記シリコーン樹脂層に開口部を形成することと、
ブラスト処理により、前記シリコーン樹脂層の開口部に残った残留物を除去することと、
を含む、
ことを特徴とするLED基板の製造方法。 - 前記シリコーン樹脂層は、ソルダーレジストである、
ことを特徴とする請求項1に記載のLED基板の製造方法。 - 前記レーザ光の照射に先立ち、前記シリコーン樹脂層上に保護フィルムを形成し、
前記レーザ光は、前記保護フィルムに開口部を形成するとともに前記シリコーン樹脂層に開口部を形成する、
ことを特徴とする請求項1又は2に記載のLED基板の製造方法。 - 前記ブラスト処理後に前記保護フィルムを除去する、
ことを特徴とする請求項3に記載のLED基板の製造方法。 - 前記残留物は、シリカ(SiO2)を含む、
ことを特徴とする請求項1乃至4のいずれか一項に記載のLED基板の製造方法。 - 前記シリコーン樹脂層は、前記レーザ光の照射前においては、導体層を覆っており、
前記レーザ光の照射及び前記ブラスト処理により、前記シリコーン樹脂層の開口部で前記導体層が露出する、
ことを特徴とする請求項1乃至5のいずれか一項に記載のLED基板の製造方法。 - 前記反射材粒子は、酸化チタンからなる、
ことを特徴とする請求項1乃至6のいずれか一項に記載のLED基板の製造方法。 - 前記酸化チタンは、アナターゼ型の酸化チタンである、
ことを特徴とする請求項7に記載のLED基板の製造方法。 - 前記反射材粒子は、ジルコニア、アルミナ、シリカの少なくとも1つを含む、
ことを特徴とする請求項1乃至6のいずれか一項に記載のLED基板の製造方法。 - 前記レーザ光の光源は、CO2レーザである、
ことを特徴とする請求項1乃至9のいずれか一項に記載のLED基板の製造方法。 - 前記ブラスト処理に用いる砥粒は、水溶性である、
ことを特徴とする請求項1乃至10のいずれか一項に記載のLED基板の製造方法。 - 前記ブラスト処理に用いる砥粒の平均粒子直径は、0.1〜200μmの範囲にある、
ことを特徴とする請求項1乃至11のいずれか一項に記載のLED基板の製造方法。 - 前記LED基板は、青色LED用又は紫外LED用のLED基板である、
ことを特徴とする請求項1乃至12のいずれか一項に記載のLED基板の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011092523A JP5791947B2 (ja) | 2011-04-18 | 2011-04-18 | Led基板の製造方法 |
PCT/JP2012/060357 WO2012144494A1 (ja) | 2011-04-18 | 2012-04-17 | Led基板の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011092523A JP5791947B2 (ja) | 2011-04-18 | 2011-04-18 | Led基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012227292A true JP2012227292A (ja) | 2012-11-15 |
JP5791947B2 JP5791947B2 (ja) | 2015-10-07 |
Family
ID=47041600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011092523A Expired - Fee Related JP5791947B2 (ja) | 2011-04-18 | 2011-04-18 | Led基板の製造方法 |
Country Status (2)
Country | Link |
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JP (1) | JP5791947B2 (ja) |
WO (1) | WO2012144494A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016004770A (ja) * | 2014-06-19 | 2016-01-12 | 三菱電機株式会社 | 光源基板及び照明装置及び光源基板の製造方法 |
US10396253B2 (en) | 2017-03-31 | 2019-08-27 | Nichia Corporation | Method for manufacturing light-emitting device |
JP2019208021A (ja) * | 2018-05-25 | 2019-12-05 | 日亜化学工業株式会社 | 発光モジュールの製造方法 |
JP2020107708A (ja) * | 2018-12-27 | 2020-07-09 | デンカ株式会社 | 蛍光体基板の製造方法、発光基板の製造方法及び照明装置の製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05291743A (ja) * | 1992-04-14 | 1993-11-05 | Nitto Denko Corp | プリント回路基板の製造方法 |
JP2004165226A (ja) * | 2002-11-08 | 2004-06-10 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子の製造方法 |
JP2005347429A (ja) * | 2004-06-02 | 2005-12-15 | Ktech Research Corp | プリント基板の製造方法 |
JP2006210887A (ja) * | 2004-12-28 | 2006-08-10 | Sharp Corp | 発光デバイスならびにそれを用いた照明機器および表示機器 |
JP2007157798A (ja) * | 2005-11-30 | 2007-06-21 | Kyocera Corp | 発光装置 |
JP2008258296A (ja) * | 2007-04-03 | 2008-10-23 | Sony Corp | 発光装置及び光源装置 |
JP2010226095A (ja) * | 2009-02-24 | 2010-10-07 | Hitachi Chem Co Ltd | 配線基板、電子部品パッケージ及びこれらの製造方法 |
WO2010150880A1 (ja) * | 2009-06-26 | 2010-12-29 | 株式会社朝日ラバー | 白色反射材及びその製造方法 |
-
2011
- 2011-04-18 JP JP2011092523A patent/JP5791947B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-17 WO PCT/JP2012/060357 patent/WO2012144494A1/ja active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05291743A (ja) * | 1992-04-14 | 1993-11-05 | Nitto Denko Corp | プリント回路基板の製造方法 |
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