JP2012082136A - Triazine derivative, method for producing the same, and organic semi-conductor element containing the same as constituent - Google Patents

Triazine derivative, method for producing the same, and organic semi-conductor element containing the same as constituent Download PDF

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JP2012082136A
JP2012082136A JP2010226884A JP2010226884A JP2012082136A JP 2012082136 A JP2012082136 A JP 2012082136A JP 2010226884 A JP2010226884 A JP 2010226884A JP 2010226884 A JP2010226884 A JP 2010226884A JP 2012082136 A JP2012082136 A JP 2012082136A
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triazine derivative
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JP5734613B2 (en
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Takeshi Tanaka
剛 田中
Nobumichi Arai
信道 新井
Shusuke Aihara
秀典 相原
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Sagami Chemical Research Institute
Tosoh Corp
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Tosoh Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a compound which is used as an electron transport material in an organic semiconductor element to reduce a driving voltage and simultaneously has high heat resistance.SOLUTION: The triazine derivative represented by general formula (1) (wherein, Ar is a di to tetra-cyclic aromatic hydrocarbon group) is produced, and an organic semi-conductor element containing the same as a constituent is produced.

Description

本発明は、多環芳香族基を有するトリアジン誘導体とその製造方法、及びそれを含有する有機半導体素子、例えば有機トランジスタ及び有機EL素子の改善の為の新規材料に関する。さらに詳しくは、有機半導体素子の構成成分として有用なアントリル基、フェナントリル基、ピレニル基を有するトリアジン誘導体とその製造方法に関し、これらを有機化合物層の少なくとも一層に用いた低電圧並びに高耐熱性の有機半導体素子に関する。   The present invention relates to a triazine derivative having a polycyclic aromatic group, a method for producing the same, and an organic semiconductor device containing the triazine derivative, for example, a novel material for improving an organic transistor and an organic EL device. More particularly, the present invention relates to a triazine derivative having an anthryl group, a phenanthryl group, and a pyrenyl group useful as a constituent component of an organic semiconductor element and a method for producing the same, and relates to a low voltage and high heat resistance organic material using the triazine derivative in at least one organic compound layer. The present invention relates to a semiconductor element.

近年、有機半導体材料を用いた有機半導体素子に関する研究が幅広くなされており、これによりデバイスのフレキシブル化などが実現可能となりつつある。有機半導体素子は有機電界発光素子、有機トランジスタ、有機太陽電池などが挙げられ、特に有機電界発光素子は次世代フラットパネルディスプレイの本命として注目されており、既に実用化されている。有機電界発光素子は、発光材料を含有する発光層を、正孔輸送層と電子輸送層で挟み、さらにその外側に陽極と陰極を取付け、発光層に注入された正孔及び電子の再結合により生ずる励起子が失活する際の光の放出(蛍光又はりん光)を利用する素子である。また有機トランジスタは、現在のシリコントランジスタの代替素子として期待されている。   In recent years, research on organic semiconductor elements using organic semiconductor materials has been extensively performed, and it has become possible to realize flexible devices. Examples of the organic semiconductor element include an organic electroluminescent element, an organic transistor, and an organic solar cell. In particular, the organic electroluminescent element has attracted attention as a favorite of the next generation flat panel display and has already been put into practical use. An organic electroluminescent element is formed by sandwiching a light-emitting layer containing a light-emitting material between a hole transport layer and an electron transport layer, and further attaching an anode and a cathode to the outside, and recombination of holes and electrons injected into the light-emitting layer. It is an element that utilizes light emission (fluorescence or phosphorescence) when the excitons generated are deactivated. Organic transistors are expected as an alternative to current silicon transistors.

特に環境負荷低減の点からも、無機から有機への転換が期待されている。有機トランジスタ用の材料として求められる材料としては移動度があり、アモルファスシリコン程度の移動度(1cm/V・SEC)が求められている。更に高温駆動にも耐え得る高いガラス転移温度(Tg)が求められる。 In particular, from the viewpoint of reducing the environmental load, conversion from inorganic to organic is expected. There is mobility as a material required as a material for an organic transistor, and mobility (1 cm 2 / V · SEC) comparable to amorphous silicon is required. Furthermore, a high glass transition temperature (Tg) that can withstand high temperature driving is required.

特許文献1には1,3,5−トリアジン誘導体を有機電界発光素子に用いた例が開示されているが、これらは多環芳香族基を有せず、本発明のトリアジン誘導体とは異なる。   Patent Document 1 discloses an example in which a 1,3,5-triazine derivative is used for an organic electroluminescent device, but these do not have a polycyclic aromatic group and are different from the triazine derivative of the present invention.

多環芳香族基を有する1,3,5−トリアジン誘導体を有機電界発光素子に用いる例が特許文献2及び3に開示されているが、特許文献2に記載されているトリアジン誘導体は多環芳香族基の立体障害に起因する構造異性が生ずるものに限られており、本発明のトリアジン誘導体とは異なる。   Examples in which a 1,3,5-triazine derivative having a polycyclic aromatic group is used in an organic electroluminescence device are disclosed in Patent Documents 2 and 3, but the triazine derivative described in Patent Document 2 is a polycyclic aromatic compound. It is limited to those causing structural isomerism due to steric hindrance of the group, and is different from the triazine derivative of the present invention.

また、特許文献3に記載されているトリアジン誘導体は、1,3,5−トリアジンの2,4,6位に置換されているフェニル基上にメチルを有しており、本発明のトリアジン誘導体とは異なるものである。   In addition, the triazine derivative described in Patent Document 3 has methyl on the phenyl group substituted at the 2,4,6 position of 1,3,5-triazine, and the triazine derivative of the present invention Are different.

更に、文献1〜3には1,3,5−トリアジンの2,4,6位に全て等しい置換基を有する例しか記載されておらず、該トリアジン誘導体の電子移動度及びTgに関する具体的な記載も無い。有機電界発光素子に用いられる為には薄膜状態で凹凸のないアモルファス性が重要であるが、2,4,6位に全て等しい置換基を有する対称性の高いトリアジン誘導体は結晶性が高いという問題点がある。   Further, Documents 1 to 3 describe only examples having the same substituents at the 2,4,6 positions of 1,3,5-triazine, and specific examples relating to the electron mobility and Tg of the triazine derivative. There is no description. In order to be used in organic electroluminescent devices, amorphousness without unevenness in the thin film state is important. However, a highly symmetric triazine derivative having the same substituents at the 2, 4 and 6 positions has high crystallinity. There is a point.

特許文献4に記載されている化合物は縮合環を有する1,3,5−トリアジン誘導体を含んでいるが、トリアジン環上にビフェニル基を二つ有する化合物は含まれておらず、本発明のトリアジン誘導体とは異なる。また、当該文献中に記載されている化合物6−13においてピレニル基を有する1,3,5−トリアジン誘導体について言及しているが、具体的な実施例はなく、Tg及び移動度に関する記載もない。   The compound described in Patent Document 4 includes a 1,3,5-triazine derivative having a condensed ring, but does not include a compound having two biphenyl groups on the triazine ring. Different from derivatives. In addition, although the compound 6-13 described in the document refers to a 1,3,5-triazine derivative having a pyrenyl group, there is no specific example, and there is no description about Tg and mobility. .

特開2008−280330号公報JP 2008-280330 A 特開2001−143869号公報JP 2001-143869 A 特許4106974号公報Japanese Patent No. 4106974 特開2004−2297号公報Japanese Patent Laid-Open No. 2004-2297

従来の有機半導体素子は、駆動電圧が高く、また高い駆動電圧による発熱は有機半導体素子の分解を促進するため、素子の短寿命化を起こす原因となる。   A conventional organic semiconductor element has a high driving voltage, and heat generated by a high driving voltage promotes the decomposition of the organic semiconductor element, thereby causing the life of the element to be shortened.

高い駆動電圧を必要とする理由としては、有機半導体素子を構成する材料の電子移動度が低いことが挙げられる。また、素子の耐久性の向上のためには材料の結晶性を抑え、アモルファス性の高い材料が必要となる。よって、高電子移動度、高Tg及び高いアモルファス性を備えた材料が必要となるが、これらを同時に満たしているものはない。   The reason why a high drive voltage is required is that the electron mobility of the material constituting the organic semiconductor element is low. Further, in order to improve the durability of the element, it is necessary to suppress the crystallinity of the material and to use a highly amorphous material. Therefore, a material having a high electron mobility, a high Tg, and a high amorphous property is required, but none of them satisfies these simultaneously.

本発明者らは、先の課題を解決すべく鋭意検討を重ねた結果、1,3,5−トリアジン環の2,4位にビフェニリル基を有し、かつ6位にこれと異なる置換基を有した非対称構造を有するトリアジン誘導体(1)が、真空蒸着において非晶質の薄膜形成が可能であり、またこれらを有機電界発光素子等の有機半導体素子に用いた場合、汎用の材料を用いた場合に比べて高い電子移動度を達成できることを見出し、本発明を完成するに至った。   As a result of intensive studies to solve the above problems, the present inventors have a biphenylyl group at the 2,4 position of the 1,3,5-triazine ring and a different substituent at the 6 position. The triazine derivative (1) having an asymmetric structure can form an amorphous thin film by vacuum deposition, and when these are used for an organic semiconductor element such as an organic electroluminescent element, a general-purpose material is used. It has been found that higher electron mobility can be achieved than in the case, and the present invention has been completed.

すなわち本発明は、一般式(1)   That is, the present invention provides the general formula (1)

Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。)で示されるトリアジン誘導体に関するものである。
Figure 2012082136
(Wherein Ar represents a 2- to 4-ring polycyclic aromatic hydrocarbon group).

また本発明は、一般式(2)   The present invention also provides a general formula (2)

Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。Rは水素原子、炭素数1〜4のアルキル基又はフェニル基を表し、B(OR)の2つのRは同一又は異なっていてもよい。又、2つのRは一体となって酸素原子及びホウ素原子を含んで環を形成することもできる。)で示される化合物と、一般式(3)
Figure 2012082136
(In the formula, Ar represents a polycyclic aromatic hydrocarbon group having 2 to 4 rings. R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and two Rs of B (OR) 2 are The two Rs may be combined to form an oxygen atom and a boron atom to form a ring.) And a compound represented by the general formula (3)

Figure 2012082136
(式中、Xは脱離基を表す。)で示される化合物とを、塩基及びパラジウム触媒の存在下にカップリング反応させることを特徴とする一般式(1)
Figure 2012082136
(Wherein X represents a leaving group) and a coupling reaction in the presence of a base and a palladium catalyst.

Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。)で示されるトリアジン誘導体の製造方法に関するものである。
Figure 2012082136
(Wherein Ar represents a 2- to 4-ring polycyclic aromatic hydrocarbon group).

さらに本発明は、一般式(1)   Furthermore, the present invention relates to a general formula (1)

Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。)で示されるトリアジン誘導体を構成成分とすることを特徴とする有機半導体素子に関するものである。
Figure 2012082136
The present invention relates to an organic semiconductor element characterized by comprising a triazine derivative represented by the formula (wherein Ar represents a 2- to 4-ring polycyclic aromatic hydrocarbon group).

以下、本発明を詳細に説明する。   Hereinafter, the present invention will be described in detail.

Arで表される2〜4環の多環芳香族炭化水素基としては、例えば、ナフチル基、アントリル基、テトラセニル基、フェナントリル基、トリフェニレニル基又はピレニル基等が挙げられる。   Examples of the 2- to 4-ring polycyclic aromatic hydrocarbon group represented by Ar include a naphthyl group, an anthryl group, a tetracenyl group, a phenanthryl group, a triphenylenyl group, and a pyrenyl group.

Arで表されるナフチル基としては、1−ナフチル基、2−ナフチル基等が挙げられる。合成が容易な点で1−ナフチル基が好ましい。   Examples of the naphthyl group represented by Ar include a 1-naphthyl group and a 2-naphthyl group. A 1-naphthyl group is preferable in terms of easy synthesis.

Arで表されるアントリル基としては、1−アントリル基、2−アントリル基、9−アントリル基等が挙げられる。合成が容易な点で、9−アントリル基がさらに好ましい。   Examples of the anthryl group represented by Ar include a 1-anthryl group, a 2-anthryl group, and a 9-anthryl group. From the viewpoint of easy synthesis, a 9-anthryl group is more preferable.

Arで表されるフェナントリル基としては、1−フェナントリル基、2−フェナントリル基、3−フェナントリル基、4−フェナントリル基、9−フェナントリル基等が挙げられる。合成が容易な点で9−フェナントリル基がさらに好ましい。   Examples of the phenanthryl group represented by Ar include a 1-phenanthryl group, a 2-phenanthryl group, a 3-phenanthryl group, a 4-phenanthryl group, and a 9-phenanthryl group. A 9-phenanthryl group is more preferable in terms of easy synthesis.

Arで表されるピレニル基としては、1−ピレニル基、2−ピレニル基、4−ピレニル基等が挙げられる。合成が容易である点で、1−ピレニル基がさらに好ましい。   Examples of the pyrenyl group represented by Ar include a 1-pyrenyl group, a 2-pyrenyl group, and a 4-pyrenyl group. A 1-pyrenyl group is more preferable in terms of easy synthesis.

Arで表されるテトラセニル基としては、1-テトラセニル基、2−テトラセニル基、5−テトラセニル基等が挙げられる。   Examples of the tetracenyl group represented by Ar include a 1-tetracenyl group, a 2-tetracenyl group, and a 5-tetracenyl group.

Arで表されるトリフェニレニル基としては、1−トリフェニルレニル基、2−トリフェニレニル基等が挙げられる。   Examples of the triphenylenyl group represented by Ar include a 1-triphenylenyl group and a 2-triphenylenyl group.

次に本発明の製造方法について説明する。本発明のトリアジン誘導体(1)は次の反応式で示した方法により製造することができる。   Next, the manufacturing method of this invention is demonstrated. The triazine derivative (1) of the present invention can be produced by the method shown by the following reaction formula.

Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。Xは脱離基を表す。Rは水素原子、炭素数1〜4のアルキル基又はフェニル基を表し、B(OR)の2つのRは同一又は異なっていてもよい。又、2つのRは一体となって酸素原子及びホウ素原子を含んで環を形成することもできる。)
化合物(2)におけるB(OR)としては、B(OH)、B(OMe)、B(OPr)、B(OBu)、B(OPh)等が例示できる。又、2つのRが一体となって酸素原子及びホウ素原子を含んで環を形成した場合のB(OR)の例としては、次の(I)から(VI)で示される基が例示でき、収率がよい点で(II)で示される基が好ましい。
Figure 2012082136
(In the formula, Ar represents a 2-4 ring polycyclic aromatic hydrocarbon group, X represents a leaving group, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group; OR) The two Rs in 2 may be the same or different, and the two Rs may together form an oxygen atom and a boron atom to form a ring.
Examples of B (OR) 2 in the compound (2) include B (OH) 2 , B (OMe) 2 , B (O i Pr) 2 , B (OBu) 2 , and B (OPh) 2 . Examples of B (OR) 2 in the case where two R 1s are combined to form a ring containing an oxygen atom and a boron atom include the following groups (I) to (VI). The group represented by (II) is preferable in that the yield is good.

Figure 2012082136
化合物(2)の好ましい例としては、次の2−1から2−13(式中、Rは水素原子、炭素数1〜4のアルキル基又はフェニル基を表し、B(OR)の2つのRは同一又は異なっていてもよい。又、2つのRは一体となって酸素原子及びホウ素原子を含んで環を形成することもできる。)を例示できるが、本発明はこれらに限定されるものではない。
Figure 2012082136
Preferable examples of the compound (2) include the following 2-1 to 2-13 (wherein R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or a phenyl group, and two of B (OR) 2 R may be the same or different, and two Rs may be combined to form an oxygen atom and a boron atom to form a ring), but the present invention is limited to these. It is not a thing.

Figure 2012082136
一般式(2)で示される化合物は、例えば、特開2001−335516号公報に開示されている方法を用いて製造することができる。
Figure 2012082136
The compound represented by the general formula (2) can be produced, for example, using a method disclosed in JP-A No. 2001-335516.

一般式(3)で示される化合物は、例えば、特開2006−62962号公報の記載の方法に従って製造することができる。   The compound represented by the general formula (3) can be produced, for example, according to the method described in JP-A-2006-62962.

化合物(3)におけるXで表される脱離基は、塩素原子、臭素原子又はヨウ素原子を表す。収率がよい点で、臭素原子が好ましい。   The leaving group represented by X in the compound (3) represents a chlorine atom, a bromine atom or an iodine atom. A bromine atom is preferable in terms of a good yield.

「工程1」は、化合物(2)を、塩基及びパラジウム触媒の存在下に化合物(3)と反応させて本発明のトリアジン誘導体(1)を製造する方法であり、一般的な鈴木−宮浦反応の反応条件を適用することにより、収率よく目的物を得ることができる。   “Step 1” is a method for producing the triazine derivative (1) of the present invention by reacting the compound (2) with the compound (3) in the presence of a base and a palladium catalyst, and a general Suzuki-Miyaura reaction. By applying the above reaction conditions, the target product can be obtained in good yield.

「工程1」で用いることのできるパラジウム触媒としては、塩化パラジウム、酢酸パラジウム、トリフルオロ酢酸パラジウム、硝酸パラジウム等の塩を例示できる。さらに、π−アリルパラジウムクロリドダイマー、パラジウムアセチルアセトナト、トリス(ジベンジリデンアセトン)ジパラジウム、ジクロロビス(トリフェニルホスフィン)パラジウム及びジクロロ[1,1’−ビス(ジフェニルホスフィノ)フェロセン]パラジウム等の錯化合物を例示できる。   Examples of the palladium catalyst that can be used in “Step 1” include salts of palladium chloride, palladium acetate, palladium trifluoroacetate, palladium nitrate, and the like. Furthermore, complex such as π-allyl palladium chloride dimer, palladium acetylacetonate, tris (dibenzylideneacetone) dipalladium, dichlorobis (triphenylphosphine) palladium and dichloro [1,1′-bis (diphenylphosphino) ferrocene] palladium. A compound can be illustrated.

これらのパラジウム触媒は単独で用いるか、パラジウム触媒含有の反応系中に第三級ホスフィンを添加して錯化合物を調整することによって用いることができる。この際に用いることのできる第三級ホスフィンとしては、トリフェニルホスフィン、トリメチルホスフィン、トリブチルホスフィン、トリ(tert−ブチル)ホスフィン、トリシクロヘキシルホスフィン、tert−ブチルジフェニルホスフィン、9,9−ジメチル−4,5−ビス(ジフェニルホスフィノ)キサンテン、2−(ジフェニルホスフィノ)−2’−(N,N−ジメチルアミノ)ビフェニル、2−(ジ−tert−ブチルホスフィノ)ビフェニル、2−(ジシクロヘキシルホスフィノ)ビフェニル、ビス(ジフェニルホスフィノ)メタン、1,2−ビス(ジフェニルホスフィノ)エタン、1,3−ビス(ジフェニルホスフィノ)プロパン、1,4−ビス(ジフェニルホスフィノ)ブタン、1,1’−ビス(ジフェニルホスフィノ)フェロセン、トリ(2−フリル)ホスフィン、トリ(o−トリル)ホスフィン、トリス(2,5−キシリル)ホスフィン、(±)−2,2’−ビス(ジフェニルホスフィノ)−1,1’−ビナフチル、2−ジシクロヘキシルホスフィノ−2’,4’,6’−トリイソプロピルビフェニル等が例示できる。入手容易であり、収率がよい点で、酢酸パラジウムとトリ(tert−ブチル)ホスフィンの組み合わせが好ましい。   These palladium catalysts can be used alone or by adding a tertiary phosphine in a reaction system containing a palladium catalyst to prepare a complex compound. The tertiary phosphine that can be used in this case includes triphenylphosphine, trimethylphosphine, tributylphosphine, tri (tert-butyl) phosphine, tricyclohexylphosphine, tert-butyldiphenylphosphine, 9,9-dimethyl-4, 5-bis (diphenylphosphino) xanthene, 2- (diphenylphosphino) -2 ′-(N, N-dimethylamino) biphenyl, 2- (di-tert-butylphosphino) biphenyl, 2- (dicyclohexylphosphino) ) Biphenyl, bis (diphenylphosphino) methane, 1,2-bis (diphenylphosphino) ethane, 1,3-bis (diphenylphosphino) propane, 1,4-bis (diphenylphosphino) butane, 1,1 '-Bis (diphenylphosphino Ferrocene, tri (2-furyl) phosphine, tri (o-tolyl) phosphine, tris (2,5-xylyl) phosphine, (±) -2,2′-bis (diphenylphosphino) -1,1′-binaphthyl And 2-dicyclohexylphosphino-2 ′, 4 ′, 6′-triisopropylbiphenyl. A combination of palladium acetate and tri (tert-butyl) phosphine is preferable because it is easily available and yields are good.

また、「工程1」で用いる第三級ホスフィンとパラジウム触媒とのモル比に特に制限はないが、1:10から10:1が望ましく、収率がよい点で1:2から5:1がさらに望ましい。反応に用いるパラジウム触媒と化合物(3)とのモル比に特に制限はないが、1:200から1:2が望ましく、収率がよい点で1:100から1:10がさらに望ましい。   Further, the molar ratio of the tertiary phosphine and the palladium catalyst used in “Step 1” is not particularly limited, but is preferably 1:10 to 10: 1, and 1: 2 to 5: 1 in terms of good yield. More desirable. Although there is no restriction | limiting in particular in the molar ratio of the palladium catalyst used for reaction, and a compound (3), 1: 200 to 1: 2 is desirable, and 1: 100 to 1:10 is further more desirable at the point with a sufficient yield.

「工程1」の反応は塩基の存在化に行うことが必須である。この際、用いることのできる塩基としては、水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、炭酸カリウム、炭酸リチウム、炭酸セシウム、リン酸カリウム、リン酸ナトリウム、フッ化ナトリウム、フッ化カリウム、フッ化セシウム等を例示することができ、収率がよい点で炭酸セシウム、炭酸カリウム、水酸化ナトリウムが望ましい。塩基と化合物(2)とのモル比に特に制限はないが、1:2から10:1が望ましく、収率がよい点で1:1から3:1がさらに望ましい。   It is essential to carry out the reaction of “Step 1” for the presence of a base. At this time, the base that can be used is sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, lithium carbonate, cesium carbonate, potassium phosphate, sodium phosphate, sodium fluoride, potassium fluoride, cesium fluoride. Etc., and cesium carbonate, potassium carbonate, and sodium hydroxide are desirable in terms of good yield. Although there is no restriction | limiting in particular in the molar ratio of a base and a compound (2), 1: 2 to 10: 1 is desirable, and 1: 1 to 3: 1 is further more desirable at the point with a sufficient yield.

「工程1」で用いる化合物(2)と化合物(3)とのモル比に特に制限はないが、2:1から5:1が望ましく、収率がよい点で2:1から3:1がさらに望ましい。   The molar ratio of the compound (2) and the compound (3) used in “Step 1” is not particularly limited, but 2: 1 to 5: 1 is desirable, and 2: 1 to 3: 1 is preferable in terms of a good yield. More desirable.

「工程1」の反応は溶媒中で実施することもできる。この際、用いることのできる溶媒として、水、ジメチルスルホキシド、ジメチルホルムアミド、テトラヒドロフラン、トルエン、ベンゼン、ジエチルエーテル又はキシレン等が例示でき、これらを適宜組み合わせて用いてもよい。収率がよい点でテトラヒドロフランを用いることが望ましい。   The reaction of “Step 1” can also be carried out in a solvent. In this case, examples of the solvent that can be used include water, dimethyl sulfoxide, dimethylformamide, tetrahydrofuran, toluene, benzene, diethyl ether, and xylene, and these may be used in appropriate combination. It is desirable to use tetrahydrofuran in terms of a good yield.

「工程1」の反応は、0℃から150℃から適宜選ばれた温度で実施することができ、収率がよい点で40℃から80℃で行うことがさらに望ましい。   The reaction of “Step 1” can be carried out at a temperature appropriately selected from 0 ° C. to 150 ° C., and is more preferably carried out at 40 ° C. to 80 ° C. in terms of a good yield.

トリアジン誘導体(1)は、「工程1」の終了後に通常の処理をすることで得られる。必要に応じて、再結晶、カラム又は昇華等で精製してもよい。   The triazine derivative (1) can be obtained by performing a normal treatment after completion of “Step 1”. You may refine | purify by recrystallization, a column, or sublimation as needed.

本発明のトリアジン誘導体(1)から成る有機半導体素子用薄膜の製造方法に特に限定はないが、真空蒸着法による成膜が可能である。真空蒸着法による成膜は、汎用の真空蒸着装置を用いることにより行うことができる。真空蒸着法で膜を形成する際の真空槽の真空度は、有機半導体素子作製の製造タクトタイムや製造コストを考慮すると、一般的に用いられる拡散ポンプ、タ−ボ分子ポンプ、クライオポンプ等により到達し得る1×10−2〜1×10−5Pa程度が望ましい。蒸着速度は、形成する膜の厚さによるが0.005〜1.0nm/秒が望ましい。また、トリアジン誘導体(1)は、クロロホルム、ジクロロメタン、1,2−ジクロロエタン、クロロベンゼン、トルエン、酢酸エチル又は、テトラヒドロフラン等に対する溶解度が高いため、汎用の装置を用いたスピンコ−ト法、インクジェット法、キャスト法又は、ディップ法等による成膜も可能である。 Although the manufacturing method of the thin film for organic semiconductor elements which consists of the triazine derivative (1) of this invention is not specifically limited, the film-forming by a vacuum evaporation method is possible. Film formation by the vacuum evaporation method can be performed by using a general-purpose vacuum evaporation apparatus. The vacuum degree of the vacuum chamber when forming a film by the vacuum evaporation method is determined by a commonly used diffusion pump, turbo molecular pump, cryopump, etc. in consideration of the manufacturing tact time and manufacturing cost of manufacturing the organic semiconductor element. About 1 × 10 −2 to 1 × 10 −5 Pa that can be reached is desirable. The deposition rate is preferably 0.005 to 1.0 nm / second, depending on the thickness of the film to be formed. Further, since the triazine derivative (1) has high solubility in chloroform, dichloromethane, 1,2-dichloroethane, chlorobenzene, toluene, ethyl acetate, tetrahydrofuran or the like, a spin coating method, an inkjet method, a cast using a general-purpose apparatus. It is also possible to form a film by the dip method or the like.

本発明のトリアジン誘導体(1)から成る薄膜は、高い耐熱性、電子輸送能を持つため、有機半導体素子の材料として有用であり、とりわけ電子輸送材、正孔ブロック材、発光ホスト材等として用いることができ、本発明のトリアジン誘導体(1)から成る薄膜は、有機電界発光素子の構成成分としての利用できる。更に、高移動度と高いTgを兼ね備えていることから、有機トランジスタとしても有用である。   The thin film comprising the triazine derivative (1) of the present invention has high heat resistance and electron transport capability, and is therefore useful as a material for organic semiconductor elements, and particularly used as an electron transport material, a hole blocking material, a light emitting host material, and the like. The thin film comprising the triazine derivative (1) of the present invention can be used as a component of the organic electroluminescence device. Furthermore, since it has high mobility and high Tg, it is also useful as an organic transistor.

実施の形態(素子評価)で作製した有機半導体素子の断面図である。It is sectional drawing of the organic-semiconductor element produced by embodiment (element evaluation).

以下、実施例及び試験例を挙げて本発明をさらに詳細に説明するが、本発明は、これらに限定されるものではない。
実施例−1
EXAMPLES Hereinafter, although an Example and a test example are given and this invention is demonstrated further in detail, this invention is not limited to these.
Example-1

Figure 2012082136
アルゴン気流下、9−フェナントレンボロン酸(0.99g,4.46mmol)、2,4−ビス(4−ビフェニリル)−6−(4−ブロモフェニル)−1,3,5−トリアジン(2.00g,3.70mmol)、酢酸パラジウム(16.6mg,0.074mmol)及びトリ−tert−ブチルホスフィン(0.022mmol)を含むトルエン溶液(0.022mL)をテトラヒドロフラン(166mL)に懸濁し、70℃に昇温した。これに4N−NaOH水溶液(6.94mL,27.8mmol)を滴下した後、3時間還流した。室温まで冷却後、減圧下で低沸点成分を留去した後、メタノールを加え、析出した固体をろ別した。得られた固体をo−キシレンから再結晶し、目的物の2,4−ビス(4−ビフェニリル)−6−[4−(9−フェナントリル)フェニル]−1,3,5−トリアジンの灰色固体(収量1.47g,収率62%)を得た。
Figure 2012082136
Under an argon stream, 9-phenanthreneboronic acid (0.99 g, 4.46 mmol), 2,4-bis (4-biphenylyl) -6- (4-bromophenyl) -1,3,5-triazine (2.00 g) , 3.70 mmol), palladium acetate (16.6 mg, 0.074 mmol) and a toluene solution (0.022 mL) containing tri-tert-butylphosphine (0.022 mmol) are suspended in tetrahydrofuran (166 mL) and heated to 70 ° C. The temperature rose. 4N-NaOH aqueous solution (6.94 mL, 27.8 mmol) was dripped at this, Then, it recirculate | refluxed for 3 hours. After cooling to room temperature, low-boiling components were distilled off under reduced pressure, methanol was added, and the precipitated solid was filtered off. The obtained solid was recrystallized from o-xylene, and the desired 2,4-bis (4-biphenylyl) -6- [4- (9-phenanthryl) phenyl] -1,3,5-triazine gray solid (Yield 1.47 g, 62% yield) was obtained.

H−NMR(CDCl):δ.7.42(t,J=7.3Hz,2H),7.52(t,J=7.6Hz,4H),7.58(t,J=7.2Hz,1H),7.66(t,J=7.5Hz,1H),7.72(t,J=7.0Hz,2H),7.73(d,J=7.1Hz,4H),7.80(s,1H),7.80(d,J=8.3Hz,2H),7.84(d,J=8.5Hz,4H),7.96(d,J=7.8Hz,1H),8.00(d,J=8.3Hz,1H),8.76(d,J=8.3Hz,1H),8.82(d,J=8.2Hz,1H),8.91(d,J=8.3Hz,4H),8.96(d,J=8.3Hz,2H).
得られた化合物のTgは107℃であった。
実施例−2
1 H-NMR (CDCl 3 ): δ. 7.42 (t, J = 7.3 Hz, 2H), 7.52 (t, J = 7.6 Hz, 4H), 7.58 (t, J = 7.2 Hz, 1H), 7.66 (t , J = 7.5 Hz, 1H), 7.72 (t, J = 7.0 Hz, 2H), 7.73 (d, J = 7.1 Hz, 4H), 7.80 (s, 1H), 7 .80 (d, J = 8.3 Hz, 2H), 7.84 (d, J = 8.5 Hz, 4H), 7.96 (d, J = 7.8 Hz, 1H), 8.00 (d, J = 8.3 Hz, 1H), 8.76 (d, J = 8.3 Hz, 1H), 8.82 (d, J = 8.2 Hz, 1H), 8.91 (d, J = 8.3 Hz) , 4H), 8.96 (d, J = 8.3 Hz, 2H).
The Tg of the obtained compound was 107 ° C.
Example-2

Figure 2012082136
アルゴン気流下、9−アントラセンボロン酸(0.70g,3.15mmol)、2,4−ビス(4−ビフェニリル)−6−(4−ブロモフェニル)−1,3,5−トリアジン(1.42g,2.63mmol)、酢酸パラジウム(5.90mg,0.026mmol)及びトリ−tert−ブチルホスフィン(0.079mmol)を含むトルエン溶液(0.079mL)をテトラヒドロフラン(128mL)に懸濁し、70℃に昇温した。これに4N−NaOH水溶液(4.93mL,19.7mmol)を滴下した後、1.5時間還流した。室温まで冷却後、減圧下で低沸点成分を留去した後、メタノールを加え、析出した固体をろ別した。得られた固体をo−キシレンから再結晶し、目的物の2−[4−(9−アントリル)フェニル]−4,6−ビス(4−ビフェニリル)−1,3,5−トリアジンの灰色固体(収量0.72g,収率43%)を得た。
Figure 2012082136
Under an argon stream, 9-anthraceneboronic acid (0.70 g, 3.15 mmol), 2,4-bis (4-biphenylyl) -6- (4-bromophenyl) -1,3,5-triazine (1.42 g) , 2.63 mmol), palladium acetate (5.90 mg, 0.026 mmol) and tri-tert-butylphosphine (0.079 mmol) in toluene solution (0.079 mL) was suspended in tetrahydrofuran (128 mL) and heated to 70 ° C. The temperature rose. A 4N-NaOH aqueous solution (4.93 mL, 19.7 mmol) was added dropwise thereto, and the mixture was refluxed for 1.5 hours. After cooling to room temperature, low-boiling components were distilled off under reduced pressure, methanol was added, and the precipitated solid was filtered off. The obtained solid was recrystallized from o-xylene, and the desired 2- [4- (9-anthryl) phenyl] -4,6-bis (4-biphenylyl) -1,3,5-triazine gray solid (Yield 0.72 g, yield 43%) was obtained.

H−NMR(CDCl):δ.7.37−7.45(m,4H),7.48−7.53(m,6H),7.69−7.77(m,8H),7.85(d,J=8.8Hz,4H),8.09(d,J=8.5Hz、2H),8.56(s,1H),8.93(d,J=8.6Hz,4H),9.03(d,J=8.5Hz,2H).
得られた化合物のTgは100℃であった。
実施例−3
1 H-NMR (CDCl 3 ): δ. 7.37-7.45 (m, 4H), 7.48-7.53 (m, 6H), 7.69-7.77 (m, 8H), 7.85 (d, J = 8.8 Hz) , 4H), 8.09 (d, J = 8.5 Hz, 2H), 8.56 (s, 1H), 8.93 (d, J = 8.6 Hz, 4H), 9.03 (d, J = 8.5 Hz, 2H).
The Tg of the obtained compound was 100 ° C.
Example-3

Figure 2012082136
アルゴン気流下、1−ピレンボロン酸(0.55g,2.24mmol)、2,4−ビス(4−ビフェニリル)−6−(4−ブロモフェニル)−1,3,5−トリアジン(1.00g,1.85mmol)、酢酸パラジウム(4.15mg,0.018mmol)及びトリ−tert−ブチルホスフィン(0.056mmol)を含むトルエン溶液(0.056mL)をテトラヒドロフラン(75mL)に懸濁し、70℃に昇温した。これに4NーNaOH水溶液(3.47mL,13.9mmol)を滴下した後、3時間還流した。室温まで冷却後、減圧下で低沸点成分を留去した後、メタノールを加え、析出した固体をろ別した。得られた固体をo−キシレンから再結晶し、目的物の2,4−ビス(4−ビフェニリル)−6−[4−(1−ピレニル)フェニル]−1,3,5−トリアジンの灰色固体(収量0.86g,収率70%)を得た。
Figure 2012082136
Under an argon stream, 1-pyreneboronic acid (0.55 g, 2.24 mmol), 2,4-bis (4-biphenylyl) -6- (4-bromophenyl) -1,3,5-triazine (1.00 g, 1.85 mmol), palladium acetate (4.15 mg, 0.018 mmol) and tri-tert-butylphosphine (0.056 mmol) in toluene solution (0.056 mL) were suspended in tetrahydrofuran (75 mL), and the temperature was raised to 70 ° C. Warm up. A 4N-NaOH aqueous solution (3.47 mL, 13.9 mmol) was added dropwise thereto, and the mixture was refluxed for 3 hours. After cooling to room temperature, low-boiling components were distilled off under reduced pressure, methanol was added, and the precipitated solid was filtered off. The obtained solid was recrystallized from o-xylene, and the desired 2,4-bis (4-biphenylyl) -6- [4- (1-pyrenyl) phenyl] -1,3,5-triazine gray solid (Yield 0.86 g, yield 70%) was obtained.

H−NMR(CDCl):δ.7.43(t,J=7.5Hz,2H),7.52(t、J=7.8Hz,4H),7.74(d,J=7.2Hz,4H),7.85(d,J=8.5Hz,4H),7.89(d,J=8.2Hz,2H),8.03−8.14(m,5H),8.20−8.30(m,4H),8.92(d,J=8.7Hz,4H),9.01(d,J=8.3Hz,2H).
得られた化合物のTgは113℃であった。
試験例−1
最初に移動度素子の作製法について説明する。基板には2mm幅のITO(酸化インジウム錫)膜がストライプ状にパターンされた、ITO透明電極付きガラス基板を用いた。この基板をイソプロピルアルコールで洗浄した後、オゾン紫外線洗浄にて表面処理を行った。
1 H-NMR (CDCl 3 ): δ. 7.43 (t, J = 7.5 Hz, 2H), 7.52 (t, J = 7.8 Hz, 4H), 7.74 (d, J = 7.2 Hz, 4H), 7.85 (d , J = 8.5 Hz, 4H), 7.89 (d, J = 8.2 Hz, 2H), 8.03-8.14 (m, 5H), 8.20-8.30 (m, 4H) , 8.92 (d, J = 8.7 Hz, 4H), 9.01 (d, J = 8.3 Hz, 2H).
The resulting compound had a Tg of 113 ° C.
Test Example-1
First, a method for manufacturing a mobility element will be described. As the substrate, a glass substrate with an ITO transparent electrode in which an ITO (indium tin oxide) film having a width of 2 mm was patterned in a stripe shape was used. The substrate was cleaned with isopropyl alcohol and then surface treated by ozone ultraviolet cleaning.

真空蒸着槽内を3.6×10−6Torrまで減圧した後、抵抗加熱方式により加熱した2,4−ビス(4−ビフェニリル)−6−[4−(1−ピレニル)フェニル]−1,3,5−トリアジンを3〜5Å/SECの蒸着レートで前記基板上に真空蒸着した。触針式膜厚測定計(DEKTAK)で測定した成膜後の膜厚1.6μmであった。次にこの基板上にITOストライプと直交するように、メタルマスクを配して、2mm幅のAl膜を100nmの膜厚で真空蒸着した。これによって、移動度測定用の2mm角の動作エリアが得られた。この基板を酸素・水分濃度1ppm以下の窒素雰囲気グローブボックス内で封止した。封止は、エポキシ型紫外線硬化樹脂(ナガセケムテックス社製)を用いた。 2,4-bis (4-biphenylyl) -6- [4- (1-pyrenyl) phenyl] -1, heated by a resistance heating method after depressurizing the inside of the vacuum evaporation tank to 3.6 × 10 −6 Torr, 3,5-Triazine was vacuum deposited on the substrate at a deposition rate of 3-5 kg / SEC. The film thickness after film formation was 1.6 μm as measured with a stylus film thickness meter (DEKTAK). Next, a metal mask was disposed on the substrate so as to be orthogonal to the ITO stripe, and a 2 mm wide Al film was vacuum-deposited with a thickness of 100 nm. As a result, an operation area of 2 mm square for mobility measurement was obtained. This substrate was sealed in a nitrogen atmosphere glove box having an oxygen / water concentration of 1 ppm or less. For the sealing, an epoxy type ultraviolet curable resin (manufactured by Nagase ChemteX Corporation) was used.

次に前記移動度素子の移動度測定法を説明する。電荷輸送材料の移動度測定は任意の方法で測定することが出来るが、今回は一般的な測定方法であるタイムオブフライト移動度測定法を用いた。移動度測定装置は、株式会社オプテル社製を用いた。測定は室温で行い、窒素レーザをITO透明電極側から照射した時に発生した電荷のAl電極への移動速度から移動度を求めた。   Next, a method for measuring the mobility of the mobility element will be described. The mobility of the charge transport material can be measured by any method, but this time, a time-of-flight mobility measurement method, which is a general measurement method, was used. The mobility measuring apparatus manufactured by Optel Co., Ltd. was used. The measurement was performed at room temperature, and the mobility was determined from the moving speed of the charge generated when the nitrogen laser was irradiated from the ITO transparent electrode side to the Al electrode.

その結果、2,4−ビス(4−ビフェニリル)−6−[4−(1−ピレニル)フェニル]−1,3,5−トリアジンの移動度は4.3×10−4cm/V・SECであった。この値は、特開2002−158091記載の電子輸送材料として一般的なヒドロキシキノリンアルミニウム錯体(Alq)の1×10−6cm/V・SECと比較して高いものであった。
試験例−2
試験例−1と同様の方法で、2,4−ビス(4−ビフェニリル)−6−[4−(9−フェナントリル)フェニル]−1,3,5−トリアジンの移動度の測定を行なった。その結果、移動度は4.0×10−4cm/V・SECであった。
As a result, the mobility of 2,4-bis (4-biphenylyl) -6- [4- (1-pyrenyl) phenyl] -1,3,5-triazine was 4.3 × 10 −4 cm 2 / V ·. It was SEC. This value was higher than 1 × 10 −6 cm 2 / V · SEC of a hydroxyquinoline aluminum complex (Alq) that is a general electron transport material described in JP-A No. 2002-158091.
Test example-2
The mobility of 2,4-bis (4-biphenylyl) -6- [4- (9-phenanthryl) phenyl] -1,3,5-triazine was measured in the same manner as in Test Example-1. As a result, the mobility was 4.0 × 10 −4 cm 2 / V · SEC.

本発明のトリアジン誘導体(1)を用いた有機薄膜は、既存材料に比較して、高い電子移動度及びTgを有することを確認した。更に、本発明のトリアジン誘導体(1)から成る薄膜は、高い表面平滑性、アモルファス性を兼ね備えており、有機半導体素子の材料として有用である。従って、本発明のトリアジン誘導体(1)から成る薄膜は、有機電界発光素子の構成成分としての利用が期待される。更に、高移動度と高いTgを兼ね備えていることから、有機トランジスタとしても有用である。   It was confirmed that the organic thin film using the triazine derivative (1) of the present invention has higher electron mobility and Tg compared to the existing materials. Furthermore, the thin film comprising the triazine derivative (1) of the present invention has high surface smoothness and amorphous properties, and is useful as a material for organic semiconductor elements. Accordingly, the thin film comprising the triazine derivative (1) of the present invention is expected to be used as a constituent component of the organic electroluminescence device. Furthermore, since it has high mobility and high Tg, it is also useful as an organic transistor.

1.ITO透明電極付きガラス基板
2.正孔注入層
3.正孔輸送層
4.発光層
5.電子輸送層
6.陰極層
1. 1. Glass substrate with ITO transparent electrode 2. hole injection layer Hole transport layer 4. 4. Light emitting layer Electron transport layer 6. Cathode layer

Claims (7)

一般式(1)
Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。)で示されるトリアジン誘導体。
General formula (1)
Figure 2012082136
(Wherein Ar represents a 2- to 4-ring polycyclic aromatic hydrocarbon group).
Arが、フェナントリル基、アントリル基又はピレニル基である請求項1に記載のトリアジン誘導体。   The triazine derivative according to claim 1, wherein Ar is a phenanthryl group, an anthryl group or a pyrenyl group. Arが、9−フェナントリル基、9−アントリル基又は1−ピレニル基である請求項1又は2に記載のトリアジン誘導体。   The triazine derivative according to claim 1 or 2, wherein Ar is a 9-phenanthryl group, a 9-anthryl group, or a 1-pyrenyl group. 一般式(2)
Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。Rは水素原子、炭素数1〜4のアルキル基又はフェニル基を表し、B(OR)の2つのRは同一又は異なっていてもよい。又、2つのRは一体となって酸素原子及びホウ素原子を含んで環を形成することもできる。)で示される化合物と、一般式(3)
Figure 2012082136
(式中、Xは脱離基を表す。)で示される化合物を、塩基及びパラジウム触媒の存在下でカップリング反応させることを特徴とする一般式(1)
Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。)で示されるトリアジン誘導体の製造方法。
General formula (2)
Figure 2012082136
(In the formula, Ar represents a polycyclic aromatic hydrocarbon group having 2 to 4 rings. R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and two Rs of B (OR) 2 are The two Rs may be combined to form an oxygen atom and a boron atom to form a ring.) And a compound represented by the general formula (3)
Figure 2012082136
(Wherein X represents a leaving group) and a coupling reaction in the presence of a base and a palladium catalyst, the compound represented by the general formula (1)
Figure 2012082136
(In the formula, Ar represents a 2-4 ring polycyclic aromatic hydrocarbon group).
パラジウム触媒が、第三級ホスフィンを配位子として有するパラジウム触媒である請求項4に記載の製造方法。   The production method according to claim 4, wherein the palladium catalyst is a palladium catalyst having a tertiary phosphine as a ligand. 第三級ホスフィンが、トリフェニルホスフィン又はトリ−tert−ブチルホスフィンである請求項5に記載の製造方法。   The production method according to claim 5, wherein the tertiary phosphine is triphenylphosphine or tri-tert-butylphosphine. 一般式(1)
Figure 2012082136
(式中、Arは2〜4環の多環芳香族炭化水素基を表す。)で示されるトリアジン誘導体を構成成分とする有機半導体素子。
General formula (1)
Figure 2012082136
An organic semiconductor element comprising a triazine derivative represented by the formula (wherein Ar represents a 2- to 4-ring polycyclic aromatic hydrocarbon group).
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