JP2012064902A - 半導体基材の製造方法、半導体装置、および電気機器 - Google Patents
半導体基材の製造方法、半導体装置、および電気機器 Download PDFInfo
- Publication number
- JP2012064902A JP2012064902A JP2010210169A JP2010210169A JP2012064902A JP 2012064902 A JP2012064902 A JP 2012064902A JP 2010210169 A JP2010210169 A JP 2010210169A JP 2010210169 A JP2010210169 A JP 2010210169A JP 2012064902 A JP2012064902 A JP 2012064902A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- exposure
- semiconductor substrate
- manufacturing
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 155
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000000463 material Substances 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 208
- 238000012546 transfer Methods 0.000 claims abstract description 78
- 238000000206 photolithography Methods 0.000 claims abstract description 19
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims description 66
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 5
- 238000011161 development Methods 0.000 abstract description 10
- 229910052594 sapphire Inorganic materials 0.000 description 23
- 239000010980 sapphire Substances 0.000 description 23
- 230000012010 growth Effects 0.000 description 11
- 230000018109 developmental process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000002585 base Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
【解決手段】半導体基材を製造する方法において、半導体基材の表面に凹凸部を形成するためのエッチングマスクをレジスト膜のフォトリソグラフィ処理により形成する際、転写用マスク100として、あらかじめ露光ショットの重なる領域付近にある凹凸パターンであるドット状遮光部104の寸法を補正した転写用マスクを使用する。
【選択図】図1
Description
図1は、本発明の実施形態1による半導体基材の製造方法により得られた半導体基材における基板を説明する図であり、図1(a)は該基板の断面構造を示し、図1(b)は該基板の表面の形状を示している。
101 周縁遮光部
102 光透過部
103、104 ドット状遮光部
111 サファイア基板
111a 凸部
111b 凸凹部
112 ポジ型フォトレジスト
112a レジスト凸部
113 AlN(バッファ層)
114a〜114c アンドープGaN層
115 n型GaN層
205 露光ショットの繋ぎ目(多重露光領域)
206 遮光部対応ドット領域(形成不良部)
207a、207b 露光ショット(露光領域)
Claims (14)
- 基板をその表面が凹凸構造となるよう加工し、該基板上にその凹凸構造が埋め込まれるよう半導体層をエピタキシャル成長して半導体基材を製造する方法であって、
該基板の表面にフォトリソグラフィ処理によりレジストマスクを形成する工程と、
該レジストマスクを用いて該基板を選択的にエッチングして該基板の表面に該凹凸構造を形成する工程と
を含み、
該レジストマスクを形成する工程は、
該基板上に形成したレジスト膜に、転写用マスクに形成した露光パターンを転写する処理を、該レジスト膜の、該転写用マスクに対応する露光領域毎に繰り返し行う露光工程を含み、該転写用マスクとして、該レジスト膜上で、隣接する露光領域に対する露光光が重なる多重露光部の付近に対応して位置する遮光パターンの寸法を、多重露光による露光量の増大に基づいて補正した転写用マスクを使用する、半導体基材の製造方法。 - 請求項1に記載の半導体基材の製造方法において、
前記基板上に前記半導体層をエピタキシャル成長させる工程は、
該基板の凹凸構造が埋め込まれるよう、該基板上で半導体層を横方向に選択的に成長させる工程を含む、半導体基材の製造方法。 - 請求項1に記載の半導体基材の製造方法において、
前記基板をエッチングする処理は、ドライエッチング処理である、半導体基材の製造方法。 - 請求項1に記載の半導体基材の製造方法において、
前記露光はUV露光である、半導体基材の製造方法。 - 請求項4に記載の半導体基材の製造方法において、
前記UV露光には、前記基板を載置するステージにステップアンドリピート機能を有している縮小投影型露光装置を使用し、該ステップアンドリピート機能は、該ステージ上に載置された基板を各露光領域に対応する距離だけ移動させて各露光領域に前記転写用マスクの遮光パターンを転写するものである、半導体基材の製造方法。 - 請求項1に記載の半導体基材の製造方法において、
前記基板上に形成されたレジスト膜は、該基板上にポジ型フォトレジストを塗布して形成したものである、半導体基材の製造方法。 - 請求項1に記載に半導体基材の製造方法において、
前記遮光パターンの寸法を補正する際の補正量は、
前記多重露光部での露光光の積算ドーズエネルギをパラメータとして、該遮光パターンに対応するフォトリソラフィ処理後のレジストパターンの寸法を算出して決定される、半導体基材の製造方法。 - 請求項7に記載の半導体基材の製造方法において、
前記転写用マスクは、透明基板と、その上に形成された、所定の開口パターンを有する遮光膜とを有し、
前記遮光パターンは、該遮光膜の平面パターンである、半導体基材の製造方法。 - 請求項8に記載の半導体基材の製造方法において、
前記転写用マスクに形成した遮光膜の遮光パターンは、ドット状遮光パターンである、半導体基材の製造方法。 - 請求項9に記載の半導体基材の製造方法において、
前記転写用マスクにおける補正していない遮光パターンに対応するドット状遮光パターンは、直径0.5〜10μmの平面円形形状を有し、
該転写用マスクにおける補正した遮光パターンに対応するドット状遮光パターンは該転写用マスクの周縁部に位置し、該直径0.5〜10μmの平面円形形状を該転写用マスクの外側に拡張した形状を有している、半導体基材の製造方法。 - 請求項7に記載の半導体基材の製造方法において、
前記転写用マスクに形成した遮光膜の遮光パターンは、ストライプ状遮光パターンである、半導体基材の製造方法。 - 請求項11に記載の半導体基材の製造方法において、
前記転写用マスクにおける補正していない遮光パターンに対応するストライプ状遮光パターンは、ストライプ幅が0.5〜10μmの平面帯状形状を有し、
該転写用マスクにおける補正した遮光パターンに対応するストライプ状遮光パターンは、該転写用マスクの周縁部に位置し、該ストライプ幅0.5〜10μmの平面帯状形状を該転写用マスクの外側に拡張した形状を有している、半導体基材の製造方法。 - 半導体基材上に半導体素子を形成してなる半導体装置であって、
該半導体基材は、請求項1ないし請求項12のいずれかに記載の半導体基材の製造方法により得られた半導体基材である、半導体装置。 - 半導体装置を備えた電気機器であって、
該半導体装置は、請求項13に記載の半導体装置である、電気機器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010210169A JP5222916B2 (ja) | 2010-09-17 | 2010-09-17 | 半導体基材の製造方法、半導体装置、および電気機器 |
CN201180044561.6A CN103119733B (zh) | 2010-09-17 | 2011-09-12 | 制造半导体基底材料的方法、半导体设备和电子装置 |
US13/824,038 US8785308B2 (en) | 2010-09-17 | 2011-09-12 | Method for manufacturing semiconductor base material |
PCT/JP2011/005122 WO2012035750A1 (ja) | 2010-09-17 | 2011-09-12 | 半導体基材の製造方法、半導体装置、および電気機器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010210169A JP5222916B2 (ja) | 2010-09-17 | 2010-09-17 | 半導体基材の製造方法、半導体装置、および電気機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012064902A true JP2012064902A (ja) | 2012-03-29 |
JP5222916B2 JP5222916B2 (ja) | 2013-06-26 |
Family
ID=45831239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010210169A Active JP5222916B2 (ja) | 2010-09-17 | 2010-09-17 | 半導体基材の製造方法、半導体装置、および電気機器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8785308B2 (ja) |
JP (1) | JP5222916B2 (ja) |
CN (1) | CN103119733B (ja) |
WO (1) | WO2012035750A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015025631A1 (ja) * | 2013-08-21 | 2015-02-26 | シャープ株式会社 | 窒化物半導体発光素子 |
WO2015115266A1 (ja) * | 2014-01-28 | 2015-08-06 | シャープ株式会社 | 窒化物半導体素子 |
WO2016108422A1 (en) * | 2014-12-31 | 2016-07-07 | Seoul Viosys Co., Ltd. | Vertical light emitting diode with v-pit current spreading member and manufacturing method of the same |
JP2016155963A (ja) * | 2015-02-25 | 2016-09-01 | 株式会社Flosfia | 紫外線発光材料およびその製造方法 |
JP2016155962A (ja) * | 2015-02-25 | 2016-09-01 | 株式会社Flosfia | 蛍光体組成物の製造方法および発光装置 |
KR20180118706A (ko) * | 2016-02-29 | 2018-10-31 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | 패터닝된 사파이어 기판 마스크의 패턴 구조 및 노광 방법 |
JP2020019969A (ja) * | 2015-02-25 | 2020-02-06 | 株式会社Flosfia | 紫外線発光材料およびその製造方法 |
US10777703B2 (en) | 2017-06-30 | 2020-09-15 | Nichia Corporation | Method of manufacturing patterned substrate and method of manufacturing semiconductor device using the same |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101803569B1 (ko) * | 2011-05-24 | 2017-12-28 | 엘지이노텍 주식회사 | 발광 소자 |
KR101233063B1 (ko) * | 2012-04-19 | 2013-02-19 | (주)휴넷플러스 | 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법 |
CN102981356A (zh) * | 2012-12-14 | 2013-03-20 | 京东方科技集团股份有限公司 | 一种减小掩膜版拼接误差的方法 |
DE102013106689B4 (de) * | 2013-06-26 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
JP2015072751A (ja) * | 2013-10-01 | 2015-04-16 | 株式会社ジャパンディスプレイ | 有機el表示装置 |
EP3718544A1 (en) * | 2013-10-01 | 2020-10-07 | Novartis AG | Combination |
KR102326126B1 (ko) | 2014-12-05 | 2021-11-15 | 삼성전자주식회사 | 포토레지스트용 고분자, 패턴 형성 방법 및 반도체 장치의 제조 방법 |
US9490455B2 (en) * | 2015-03-16 | 2016-11-08 | International Business Machines Corporation | LED light extraction enhancement enabled using self-assembled particles patterned surface |
CN105185813A (zh) * | 2015-09-09 | 2015-12-23 | 京东方科技集团股份有限公司 | Oled显示装置及其制备方法 |
CN109872993B (zh) | 2017-12-04 | 2021-09-14 | 联华电子股份有限公司 | 半导体结构的布局、半导体装置及其形成方法 |
KR20200077838A (ko) * | 2018-12-21 | 2020-07-01 | 엘지디스플레이 주식회사 | 발광다이오드를 이용한 발광장치 |
TWI752617B (zh) * | 2020-09-04 | 2022-01-11 | 劉大有 | 無光罩曝光機之晶片偏移校正方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007537581A (ja) * | 2004-04-01 | 2007-12-20 | クリー インコーポレイテッド | 発光デバイスのレーザパターン形成及びパターン形成された発光デバイス |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11305416A (ja) | 1998-04-20 | 1999-11-05 | Hitachi Ltd | 半導体装置の製造方法及びフォトマスクの製造方法 |
CN1175500C (zh) * | 2000-08-17 | 2004-11-10 | 国联光电科技股份有限公司 | 具粗化界面发光元件及其制作方法 |
KR100425343B1 (ko) * | 2001-04-17 | 2004-03-30 | 삼성전기주식회사 | 반도체 기판 제조방법 |
US7683386B2 (en) * | 2003-08-19 | 2010-03-23 | Nichia Corporation | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth |
KR100668822B1 (ko) * | 2004-04-28 | 2007-01-16 | 주식회사 하이닉스반도체 | 메모리 장치의 셀프 리프레쉬 주기 제어 장치 |
JP2008185908A (ja) | 2007-01-31 | 2008-08-14 | Nikon Corp | マスクの製造方法、露光方法、露光装置、および電子デバイスの製造方法 |
JP2010103424A (ja) * | 2008-10-27 | 2010-05-06 | Showa Denko Kk | 半導体発光素子の製造方法 |
JP5261218B2 (ja) * | 2009-02-04 | 2013-08-14 | 富士フイルム株式会社 | 微粒子及びその製造方法 |
EP2403019B1 (en) * | 2010-06-29 | 2017-02-22 | LG Innotek Co., Ltd. | Light emitting device |
-
2010
- 2010-09-17 JP JP2010210169A patent/JP5222916B2/ja active Active
-
2011
- 2011-09-12 CN CN201180044561.6A patent/CN103119733B/zh not_active Expired - Fee Related
- 2011-09-12 WO PCT/JP2011/005122 patent/WO2012035750A1/ja active Application Filing
- 2011-09-12 US US13/824,038 patent/US8785308B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007537581A (ja) * | 2004-04-01 | 2007-12-20 | クリー インコーポレイテッド | 発光デバイスのレーザパターン形成及びパターン形成された発光デバイス |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2015025631A1 (ja) * | 2013-08-21 | 2017-03-02 | シャープ株式会社 | 窒化物半導体発光素子 |
WO2015025631A1 (ja) * | 2013-08-21 | 2015-02-26 | シャープ株式会社 | 窒化物半導体発光素子 |
JP5997373B2 (ja) * | 2013-08-21 | 2016-09-28 | シャープ株式会社 | 窒化物半導体発光素子 |
WO2015115266A1 (ja) * | 2014-01-28 | 2015-08-06 | シャープ株式会社 | 窒化物半導体素子 |
JPWO2015115266A1 (ja) * | 2014-01-28 | 2017-03-23 | シャープ株式会社 | 窒化物半導体素子 |
WO2016108422A1 (en) * | 2014-12-31 | 2016-07-07 | Seoul Viosys Co., Ltd. | Vertical light emitting diode with v-pit current spreading member and manufacturing method of the same |
JP2016155963A (ja) * | 2015-02-25 | 2016-09-01 | 株式会社Flosfia | 紫外線発光材料およびその製造方法 |
JP2016155962A (ja) * | 2015-02-25 | 2016-09-01 | 株式会社Flosfia | 蛍光体組成物の製造方法および発光装置 |
JP2020019969A (ja) * | 2015-02-25 | 2020-02-06 | 株式会社Flosfia | 紫外線発光材料およびその製造方法 |
KR20180118706A (ko) * | 2016-02-29 | 2018-10-31 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | 패터닝된 사파이어 기판 마스크의 패턴 구조 및 노광 방법 |
JP2019511005A (ja) * | 2016-02-29 | 2019-04-18 | シャンハイ マイクロ エレクトロニクス イクイプメント(グループ)カンパニー リミティド | パターン化サファイア基板マスクのパターン構造および露光方法 |
KR102094930B1 (ko) | 2016-02-29 | 2020-03-30 | 상하이 마이크로 일렉트로닉스 이큅먼트(그룹) 컴퍼니 리미티드 | 패터닝된 사파이어 기판 마스크의 패턴 구조 및 노광 방법 |
US10777703B2 (en) | 2017-06-30 | 2020-09-15 | Nichia Corporation | Method of manufacturing patterned substrate and method of manufacturing semiconductor device using the same |
TWI776908B (zh) * | 2017-06-30 | 2022-09-11 | 日商日亞化學工業股份有限公司 | 圖案化基板之製造方法及半導體裝置之製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103119733A (zh) | 2013-05-22 |
CN103119733B (zh) | 2016-01-20 |
US20130175568A1 (en) | 2013-07-11 |
US8785308B2 (en) | 2014-07-22 |
JP5222916B2 (ja) | 2013-06-26 |
WO2012035750A1 (ja) | 2012-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5222916B2 (ja) | 半導体基材の製造方法、半導体装置、および電気機器 | |
EP2477238B1 (en) | Semiconductor light emitting element | |
KR101173376B1 (ko) | 반도체 발광부재 | |
US20140080239A1 (en) | Patterned substrate for light emitting diode and light emitting diode employing the same | |
US20160149076A1 (en) | Led element and method of manufacturing the same | |
JP2010171382A (ja) | 窒化物半導体発光素子 | |
KR20120118005A (ko) | 광전자 반도체 컴포넌트 및 광 결정 | |
US8378567B2 (en) | Light-polarizing structure | |
CN101449400A (zh) | 半导体发光元件的制造方法 | |
JP2014229648A (ja) | 半導体発光素子 | |
US20080217638A1 (en) | Semiconductor Light Emitting Device and Fabrication Method Thereof | |
JP2007288106A (ja) | 半導体発光素子の製造方法およびそれから得られる素子 | |
US10777703B2 (en) | Method of manufacturing patterned substrate and method of manufacturing semiconductor device using the same | |
WO2021179279A1 (zh) | 一种半导体发光元件及其制作方法 | |
US9800021B2 (en) | Semiconductor laser device and manufacturing method of the same | |
JP2011071443A (ja) | 発光素子の製造方法 | |
KR101216664B1 (ko) | 회절광학소자를 적용한 고광도 발광다이오드의 제조방법 및 이 방법을 이용하여 제조되는 고광도 발광다이오드 | |
KR100867569B1 (ko) | 투명기판을 갖는 발광다이오드 및 그 제조방법 | |
JP2010118572A (ja) | 半導体発光装置の製造方法 | |
KR20090068003A (ko) | 포토마스크의 제조 방법 | |
KR102010851B1 (ko) | 유기발광다이오드 디스플레이 장치 및 이의 제조방법 | |
KR20120062983A (ko) | 광 구조체를 구비한 발광 다이오드 및 그의 제조 방법 | |
KR20210093523A (ko) | 회절광학소자를 이용하는 투광부를 가지는 광 프로젝터 | |
JP2022154018A (ja) | 発光装置の製造方法、発光装置及びプロジェクター | |
KR20060074390A (ko) | 발광 소자 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130123 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130218 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130311 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160315 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5222916 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
SG99 | Written request for registration of restore |
Free format text: JAPANESE INTERMEDIATE CODE: R316G99 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D04 |