JP2012028713A - Method of forming gate stack - Google Patents
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- JP2012028713A JP2012028713A JP2010168792A JP2010168792A JP2012028713A JP 2012028713 A JP2012028713 A JP 2012028713A JP 2010168792 A JP2010168792 A JP 2010168792A JP 2010168792 A JP2010168792 A JP 2010168792A JP 2012028713 A JP2012028713 A JP 2012028713A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 230000000694 effects Effects 0.000 claims abstract description 17
- 238000010521 absorption reaction Methods 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004335 scaling law Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28176—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the definitive gate conductor
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Abstract
Description
本発明は、ゲートスタック形成方法に関するものである。 The present invention relates to a gate stack forming method.
近年の集積回路ではＳｉＯ２にかわり、高誘電率(high-k)ゲート絶縁膜が使用されるようになった。これは、スケーリング則に従い電気的な等価酸化膜厚は薄膜化しつつ、膜の誘電率を増大させることで、実際の膜厚を増加させ、直接トンネル電流を抑制する手法である。最初の世代のhigh-k材料としては、ＨｆＯ２(誘電率約１３〜２０)が用いられた。 In recent integrated circuits, a high dielectric constant (high-k) gate insulating film has been used instead of SiO 2 . This is a technique for suppressing the tunnel current directly by increasing the actual film thickness by increasing the dielectric constant of the film while reducing the electrical equivalent oxide film thickness according to the scaling law. As the first generation high-k material, HfO 2 (dielectric constant about 13-20) was used.
微細化の進行に伴い、約０．５ｎｍ以下という極薄の等価酸化膜厚が必要とされる技術世代において、ゲートスタック全体での等価酸化膜厚を薄膜化する手法はいくつか提案されている。 Several techniques have been proposed to reduce the equivalent oxide thickness of the entire gate stack in a technology generation that requires an ultra-thin equivalent oxide thickness of about 0.5 nm or less as miniaturization progresses. .
ひとつは、ある種の金属をドープしたＴｉＮ、ＴａＮ等の合金をゲート電極とし、熱処理時にＨｆＯ２とＳｉとの界面に存在するＳｉＯ２層を、ドープした金属による酸素欠陥注入効果により還元分解し、ＨｆＯ２を直接Ｓｉ上に形成することで、低誘電率の界面ＳｉＯ２層による等価酸化膜厚の増加を抑制する手法である。（非特許文献１、２参照）
しかし、約０．５ｎｍ以下の等価酸化膜厚を得るためには低誘電率の界面ＳｉＯ２層を完全に除去した上でも、誘電率１３〜２０程度のhigh-k絶縁膜ですら直接トンネル電流が流れる領域までも薄膜化する必要が生じるため、この手法は充分なものではない。
The first is to use an alloy such as TiN or TaN doped with a certain metal as a gate electrode, and to reduce and decompose the SiO 2 layer present at the interface between HfO 2 and Si during heat treatment by the oxygen defect injection effect of the doped metal. In this method, HfO 2 is directly formed on Si to suppress an increase in equivalent oxide thickness due to the low dielectric constant interface SiO 2 layer. (See Non-Patent Documents 1 and 2)
However, in order to obtain an equivalent oxide thickness of about 0.5 nm or less, even if the interface SiO 2 layer having a low dielectric constant is completely removed, even a high-k insulating film having a dielectric constant of about 13 to 20 can be directly tunneled. This method is not sufficient because it is necessary to reduce the thickness of the region where the gas flows.
近年研究が進められているのが、従来のhigh-k材料よりも誘電率の高い絶縁層(higher-k材料、誘電率３０以上)を用いる手法である。
higher-kゲート絶縁膜を形成する手法はすでに提案されている。図２にそのひとつを紹介する（特許文献１参照）。これはＨｆＯ２膜上に保護膜を堆積した上で急速熱処理を行い、高誘電率の結晶相(cubic相)を優先的に生成するというものである。
しかしこの手法では、ＨｆＯ２とＳｉとの界面に、ＨｆＯ２が結晶化する際に放出された酸素によってＳｉＯ２層が形成され、ゲートスタック全体での等価酸化膜厚が増加してしまうという問題が存在し、極薄の等価酸化膜厚の実現は困難である。
In recent years, research is progressing on a technique using an insulating layer (higher-k material, dielectric constant 30 or more) having a higher dielectric constant than that of a conventional high-k material.
A method for forming a higher-k gate insulating film has already been proposed. One of them is introduced in FIG. 2 (see Patent Document 1). In this method, a protective film is deposited on the HfO 2 film and then rapid thermal processing is performed to preferentially generate a crystal phase (cubic phase) with a high dielectric constant.
However, with this technique, a SiO 2 layer is formed at the interface between HfO 2 and Si by oxygen released when HfO 2 is crystallized, and the equivalent oxide film thickness of the entire gate stack increases. Therefore, it is difficult to realize an extremely thin equivalent oxide film thickness.
本発明は、ＨｆＯ２層をゲート絶縁膜とするゲートスタックにおいて、界面にＳｉＯ２層が形成されない極薄の等価酸化膜厚を持ったhigher-kゲートスタックを実現することを課題とする。 An object of the present invention is to realize a higher-k gate stack having an extremely thin equivalent oxide film thickness in which an SiO 2 layer is not formed at an interface in a gate stack using an HfO 2 layer as a gate insulating film.
上記の課題は、以下のゲートスタック形成方法によって解決される。
（１）シリコン基板上にＨｆＯ２層及び酸素吸収効果のある酸素制御金属層を順に形成する工程と、ＨｆＯ２層が結晶化する温度で熱処理する工程とを含むゲートスタック形成方法。
（２）シリコン基板上にＨｆＯ２層を形成し、ＨｆＯ２層とゲート電極層の間に酸素吸収効果のある酸素制御金属層を挿入した上で熱処理を行い、ＨｆＯ２層を結晶化して誘電率を増大させると同時に、ＨｆＯ２熱処理時の放出酸素吸収及びＨｆＯ２格子からの酸素除去効果を用いてＨｆＯ２／Ｓｉ界面に形成されるＳｉＯ２を除去することを特徴とするゲートスタック形成方法。
（３）上記酸素吸収効果のある酸素制御金属層は、Ｔｉ層であることを特徴とする（１）又は（２）に記載のゲートスタック形成方法。
（４）上記ゲート電極層は、ＴｉＮ電極層であることを特徴とする（２）又は（３）に記載のゲートスタック形成方法。
The above problem is solved by the following gate stack formation method.
(1) A gate stack forming method including a step of sequentially forming an HfO 2 layer and an oxygen-controlling metal layer having an oxygen absorption effect on a silicon substrate, and a heat treatment at a temperature at which the HfO 2 layer is crystallized.
(2) An HfO 2 layer is formed on a silicon substrate, an oxygen control metal layer having an oxygen absorption effect is inserted between the HfO 2 layer and the gate electrode layer, and heat treatment is performed, and the HfO 2 layer is crystallized to form a dielectric. A method of forming a gate stack, characterized by removing SiO 2 formed at the HfO 2 / Si interface by increasing the rate and simultaneously using the released oxygen absorption during the HfO 2 heat treatment and the effect of removing oxygen from the HfO 2 lattice .
(3) The method for forming a gate stack according to (1) or (2), wherein the oxygen-controlling metal layer having an oxygen absorption effect is a Ti layer.
(4) The method for forming a gate stack according to (2) or (3), wherein the gate electrode layer is a TiN electrode layer.
本発明によれば、ＨｆＯ２層上に酸素吸収効果のある酸素制御金属層を形成した上で急速加熱処理を行うことにより、界面のＳｉＯ２層は形成されず、極薄の等価酸化膜厚を持ったhigher-kゲートスタックが実現できる。 According to the present invention, an oxygen control metal layer having an oxygen absorption effect is formed on the HfO 2 layer, and then rapid heat treatment is performed, so that the SiO 2 layer at the interface is not formed, and an extremely thin equivalent oxide film thickness is formed. A higher-k gate stack with can be realized.
本発明に係るゲートスタック形成方法について、図１を参照して詳細に説明する。
（１）Ｓｉ基板上にゲート絶縁膜となるアモルファスＨｆＯ２層及び酸素吸収効果のある酸素制御金属層を形成する。（図１左図参照）
（２）急速加熱処理を行う。(図１中央図参照)
（３）この処理によりＨｆＯ２層は結晶化し高誘電率化する。（図１右図参照）
（４）最後にゲート電極を形成しゲートスタックが完成する。
A method of forming a gate stack according to the present invention will be described in detail with reference to FIG.
(1) An amorphous HfO 2 layer serving as a gate insulating film and an oxygen control metal layer having an oxygen absorption effect are formed on a Si substrate. (See the left figure in Fig. 1)
(2) A rapid heat treatment is performed. (Refer to the central figure in Fig. 1)
(3) By this treatment, the HfO 2 layer is crystallized to increase the dielectric constant. (Refer to the right figure in Fig. 1)
(4) Finally, a gate electrode is formed to complete the gate stack.
酸素吸収効果のある酸素制御金属層の効果は、次のとおりである。(図１中央図参照)
（１）ＨｆＯ２熱処理時の放出酸素を直接吸収し、界面のＳｉＯ２形成を抑制する。
（２）ＨｆＯ２格子から酸素を除去し酸素欠陥（Ｖｏ）を膜中に導入することで、界面のＳｉＯ２を還元分解する。
これらの効果によりＳｉＯ２界面層の形成を抑制する。
The effect of the oxygen control metal layer having an oxygen absorption effect is as follows. (Refer to the central figure in Fig. 1)
(1) The oxygen released during the HfO 2 heat treatment is directly absorbed, and the formation of SiO 2 at the interface is suppressed.
(2) By removing oxygen from the HfO 2 lattice and introducing oxygen defects (V o ) into the film, SiO 2 at the interface is reduced and decomposed.
These effects suppress the formation of the SiO 2 interface layer.
本発明によれば、極薄の等価酸化膜厚を持ったhigher-kゲートスタックを実現できる。
試作では、酸素吸収効果のある金属層として５〜７ｎｍの厚さのＴｉ層とし、熱処理温度は６００〜１１００℃とした。これによりＨｆＯ２層の誘電率約４６、ＨｆＯ２ゲートスタックとして、０．３７ｎｍの等価酸化膜厚が得られた。
According to the present invention, a higher-k gate stack having an extremely thin equivalent oxide thickness can be realized.
In the trial manufacture, a Ti layer having a thickness of 5 to 7 nm was used as the metal layer having an oxygen absorption effect, and the heat treatment temperature was 600 to 1100 ° C. As a result, an equivalent oxide film thickness of 0.37 nm was obtained as an HfO 2 layer dielectric constant of about 46 and an HfO 2 gate stack.
Claims (4)
4. The method of forming a gate stack according to claim 2, wherein the gate electrode layer is a TiN electrode layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010168792A JP5565804B2 (en) | 2010-07-28 | 2010-07-28 | Gate stack formation method |
| PCT/JP2011/065430 WO2012014642A1 (en) | 2010-07-28 | 2011-07-06 | Gate stack formation method |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2010168792A JP5565804B2 (en) | 2010-07-28 | 2010-07-28 | Gate stack formation method |
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| JP2012028713A true JP2012028713A (en) | 2012-02-09 |
| JP5565804B2 JP5565804B2 (en) | 2014-08-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012133433A1 (en) * | 2011-03-28 | 2012-10-04 | 独立行政法人産業技術総合研究所 | Method for forming gate insulating film and method for manufacturing semiconductor device |
| JP2012209473A (en) * | 2011-03-30 | 2012-10-25 | National Institute Of Advanced Industrial & Technology | Method of manufacturing semiconductor and semiconductor device |
| US9275993B2 (en) | 2012-09-07 | 2016-03-01 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5955658B2 (en) * | 2012-06-15 | 2016-07-20 | 株式会社Ｓｃｒｅｅｎホールディングス | Heat treatment method and heat treatment apparatus |
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| JP2000260979A (en) * | 1999-03-11 | 2000-09-22 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JP2008537359A (en) * | 2005-04-21 | 2008-09-11 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Gate electrode metal / metal nitride double layer CMOS and semiconductor structures in self-aligned and positively scaled CMOS devices |
| JP2008306036A (en) * | 2007-06-08 | 2008-12-18 | Seiko Epson Corp | Method of manufacturing semiconductor device, and semiconductor device |
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- 2010-07-28 JP JP2010168792A patent/JP5565804B2/en not_active Expired - Fee Related
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Patent Citations (3)
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| JP2000260979A (en) * | 1999-03-11 | 2000-09-22 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JP2008537359A (en) * | 2005-04-21 | 2008-09-11 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Gate electrode metal / metal nitride double layer CMOS and semiconductor structures in self-aligned and positively scaled CMOS devices |
| JP2008306036A (en) * | 2007-06-08 | 2008-12-18 | Seiko Epson Corp | Method of manufacturing semiconductor device, and semiconductor device |
Non-Patent Citations (2)
| Title |
|---|
| JPN6014015023; Ｓｕｎｇｈｏ Ｈｅｏ ｅｔ ａｌ: 'Ｌａｓｅｒ Ａｎｎｅａｌｉｎｇ ｏｎ Ｔｉ Ｅｌｅｃｔｒｏｄｅ：Ｉｍｐａｃｔ ｏｎ Ｔｉ／ＨｆＯ２／ＳｉＯ２ｎ-Ｔｙｐｅ ＭＯＳＦＥＴ' Ｅｌｅｃｔｒｏｃｈｅｍｉｃａｌ ａｎｄ Ｓｏｌｉｄ-Ｓｔａｔｅ Ｌｅｔｔｅｒｓ Ｖｏｌ １１， Ｎｏ １０, 2008, Ｈ２７６-Ｈ２７９ * |
| JPN6014015024; Ｃｈａｎｇｈｗａｎ Ｃｈｏｉ ｅｔ ａｌ: 'Ｆａｂｒｉｃａｔｉｏｎ ｏｆ ＴａＮ-ｇａｔｅｄ Ｕｌｔｒａ-Ｔｈｉｎ ＭＯＳＦＥＴｓ（ＥＯＴ＜１．０ｎｍ） ｗｉｔｈ ＨｆＯ２ ｕｓｉｎｇ ａ Ｎｏｖｅｌ Ｏｘｙｇｅｎ Ｓｃａｖｅｎｇｉｎｇ Ｐｒｏ' ２００５ Ｓｙｍｐｏｓｉｕｍ ｏｎ ＶＬＳＩ Ｔｅｃｈｎｏｌｏｇｙ Ｄｉｇｅｓｔ ｏｆ Ｔｅｃｈｎｉｃａｌ Ｐａｐｅｒｓ , 2005, ｐ２２６-２２７ * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012133433A1 (en) * | 2011-03-28 | 2012-10-04 | 独立行政法人産業技術総合研究所 | Method for forming gate insulating film and method for manufacturing semiconductor device |
| JP5652926B2 (en) * | 2011-03-28 | 2015-01-14 | 独立行政法人産業技術総合研究所 | Method for forming gate insulating film and method for manufacturing semiconductor device |
| JP2012209473A (en) * | 2011-03-30 | 2012-10-25 | National Institute Of Advanced Industrial & Technology | Method of manufacturing semiconductor and semiconductor device |
| US9275993B2 (en) | 2012-09-07 | 2016-03-01 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5565804B2 (en) | 2014-08-06 |
| WO2012014642A1 (en) | 2012-02-02 |
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