JP2011515855A5 - - Google Patents

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Publication number
JP2011515855A5
JP2011515855A5 JP2011500951A JP2011500951A JP2011515855A5 JP 2011515855 A5 JP2011515855 A5 JP 2011515855A5 JP 2011500951 A JP2011500951 A JP 2011500951A JP 2011500951 A JP2011500951 A JP 2011500951A JP 2011515855 A5 JP2011515855 A5 JP 2011515855A5
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JP
Japan
Prior art keywords
gas
chamber
bias power
etching
substrate
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JP2011500951A
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English (en)
Japanese (ja)
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JP5608157B2 (ja
JP2011515855A (ja
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Priority claimed from PCT/US2009/037647 external-priority patent/WO2009117565A2/en
Publication of JP2011515855A publication Critical patent/JP2011515855A/ja
Publication of JP2011515855A5 publication Critical patent/JP2011515855A5/ja
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JP2011500951A 2008-03-21 2009-03-19 基板エッチングシステム及びプロセスの方法及び装置 Active JP5608157B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US3866408P 2008-03-21 2008-03-21
US61/038,664 2008-03-21
US4057008P 2008-03-28 2008-03-28
US61/040,570 2008-03-28
US9482008P 2008-09-05 2008-09-05
US61/094,820 2008-09-05
PCT/US2009/037647 WO2009117565A2 (en) 2008-03-21 2009-03-19 Method and apparatus of a substrate etching system and process

Publications (3)

Publication Number Publication Date
JP2011515855A JP2011515855A (ja) 2011-05-19
JP2011515855A5 true JP2011515855A5 (enrdf_load_stackoverflow) 2012-05-10
JP5608157B2 JP5608157B2 (ja) 2014-10-15

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Family Applications (1)

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JP2011500951A Active JP5608157B2 (ja) 2008-03-21 2009-03-19 基板エッチングシステム及びプロセスの方法及び装置

Country Status (6)

Country Link
US (1) US20090272717A1 (enrdf_load_stackoverflow)
JP (1) JP5608157B2 (enrdf_load_stackoverflow)
KR (1) KR20100128333A (enrdf_load_stackoverflow)
CN (2) CN101978479A (enrdf_load_stackoverflow)
TW (1) TWI538045B (enrdf_load_stackoverflow)
WO (1) WO2009117565A2 (enrdf_load_stackoverflow)

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US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
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