JP2011233657A - 裏面電極型太陽電池、および裏面電極型太陽電池の製造方法 - Google Patents
裏面電極型太陽電池、および裏面電極型太陽電池の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 146
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 146
- 239000010703 silicon Substances 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 134
- 238000009792 diffusion process Methods 0.000 claims abstract description 122
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 72
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 70
- 238000002161 passivation Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 28
- 230000003647 oxidation Effects 0.000 claims description 25
- 238000007254 oxidation reaction Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 21
- 239000011574 phosphorus Substances 0.000 description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 16
- 238000000059 patterning Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- 229910052796 boron Inorganic materials 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 238000010306 acid treatment Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 239000002562 thickening agent Substances 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- -1 phosphorus compound Chemical class 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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Abstract
【解決手段】第1導電型のシリコン基板の受光面とは反対側の面である裏面に第1の導電型用電極と、第1の導電型とは異なる第2の導電型用電極とを有する裏面電極型太陽電池において、シリコン基板の裏面側に第1の導電型拡散層と第2の導電型拡散層とが隣接して形成され、シリコン基板の裏面側の外周縁には、第1の導電型の拡散層が形成されている裏面電極型太陽電池である。
【選択図】図2
Description
Claims (18)
- 第1導電型のシリコン基板の受光面とは反対側の面である裏面に第1の導電型用電極と、第1の導電型とは異なる第2の導電型用電極とを有する裏面電極型太陽電池において、
前記シリコン基板の裏面側に第1の導電型拡散層と第2の導電型拡散層とが隣接して形成され、
前記シリコン基板の裏面側の外周縁には、第1の導電型の拡散層が形成されていることを特徴とする裏面電極型太陽電池。 - 前記第1の導電型の拡散層の面積の合計は、前記第2の導電型の拡散層の面積の合計よりも小さいことを特徴とする請求項1に記載の裏面電極型太陽電池。
- 前記シリコン基板の受光面側に第1の導電型である受光面拡散層が形成されていることを特徴とする請求項1または2に記載の裏面電極型太陽電池。
- 前記受光面拡散層の受光面上に受光面パッシベーション膜が形成され、
前記受光面パッシベーション膜の受光面上に第1の導電型の不純物を含む酸化チタンである反射防止膜が形成されていることを特徴とする請求項3に記載の裏面電極型太陽電池。 - 前記第1の導電型は、n型であることを特徴とする請求項1〜4のいずれかに記載の裏面電極型太陽電池。
- 前記受光面パッシベーション膜の膜厚が、15nm〜200nmであることを特徴とする請求項4または5に記載の裏面電極型太陽電池。
- 前記反射防止膜に含まれる不純物が、リン酸化物として15wt%〜35wt%含有することを特徴とする請求項5または6に記載の裏面電極型太陽電池。
- 第1導電型のシリコン基板の受光面とは反対側の面である裏面に第1の導電型用電極と、第1の導電型とは異なる第2の導電型用電極とを有する裏面電極型太陽電池において、
前記シリコン基板の裏面側には第1の導電型拡散層と第2の導電型拡散層とが形成され、
前記第2の導電型拡散層は、前記第1の導電型拡散層で囲まれており、
前記シリコン基板の裏面側の外周縁には、第1の導電型の拡散層が形成されていることを特徴とする裏面電極型太陽電池。 - 第1導電型のシリコン基板の受光面とは反対側の面である裏面に第1の導電型用電極と、第1の導電型とは異なる第2の導電型用電極とを有する裏面電極型太陽電池において、
前記シリコン基板の裏面側には拡散層が形成され、前記拡散層は第1の導電型拡散層と第2の導電型拡散層とからなり、
前記第2の導電型拡散層は島状に形成されており、
前記シリコン基板の裏面側の外周縁には、第1の導電型の拡散層が形成されていることを特徴とする裏面電極型太陽電池。 - 前記第1の導電型拡散層は1つの拡散層領域を形成していることを特徴とする請求項8または9に記載の裏面電極型太陽電池。
- 前記シリコン基板の裏面側に形成された前記第1の導電型拡散層の面積の合計は、前記第2導電型拡散層の面積の合計よりも小さいことを特徴とする請求項8〜10のいずれかにに記載の裏面電極型太陽電池。
- 前記第1の導電型は、n型であることを特徴とする請求項8〜11のいずれかに記載の裏面電極型太陽電池。
- 第1導電型のシリコン基板の受光面とは反対側の面である裏面に第1の導電型用電極と、第1の導電型とは異なる第2の導電型用電極とを有する裏面電極型太陽電池の製造方法において、
前記シリコン基板の裏面に第1の導電型拡散層を形成する工程と、
前記シリコン基板に熱酸化法により酸化シリコン膜を形成する工程と、
前記シリコン基板の裏面の前記第1の導電型拡散層が形成されている領域と前記第1の導電型拡散層が形成されていない領域との前記酸化シリコン膜厚差によるマスク効果を利用して、前記シリコン基板の裏面に第2の導電型拡散層を形成する工程とを有することを特徴とする裏面電極型太陽電池の製造方法。 - 前記シリコン基板の裏面に前記第2の導電型拡散層を形成する工程の前に、
前記酸化シリコン膜をエッチングする工程をさらに備えることを特徴とする請求項13に記載の裏面電極型太陽電池の製造方法。 - 前記酸化シリコン膜をエッチングする工程では、前記酸化シリコン膜を前記第1の導電型拡散層上のみに残すことを特徴とする請求項14に記載の裏面電極型太陽電池の製造方法。
- 前記シリコン基板の裏面に前記第1の導電型拡散層を形成する工程での、前記第1の導電型拡散層の表面濃度が、5×1019/cm3以上であることを特徴とする請求項13〜15のいずれかに記載の裏面電極型太陽電池の製造方法。
- 前記第1の導電型拡散層上のみに残す前記酸化シリコン膜の膜厚が、60nm以上であることを特徴とする請求項15または16に記載の裏面電極型太陽電池の製造方法。
- 前記第1の導電型は、n型であることを特徴とする請求項13〜17のいずれかに記載の裏面電極型太陽電池の製造方法。
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US13/643,329 US20130037102A1 (en) | 2010-04-27 | 2011-04-21 | Back electrode type solar cell and method for producing back electrode type solar cell |
PCT/JP2011/059795 WO2011136116A1 (ja) | 2010-04-27 | 2011-04-21 | 裏面電極型太陽電池および裏面電極型太陽電池の製造方法 |
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KR1020127028458A KR101452881B1 (ko) | 2010-04-27 | 2011-04-21 | 이면 전극형 태양전지 및 이면 전극형 태양전지의 제조방법 |
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US20130037102A1 (en) | 2013-02-14 |
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CN102971859B (zh) | 2016-02-10 |
CN102971859A (zh) | 2013-03-13 |
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