JP2011223668A - Insulating circuit for power transmission and power conversion device - Google Patents

Insulating circuit for power transmission and power conversion device Download PDF

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JP2011223668A
JP2011223668A JP2010087597A JP2010087597A JP2011223668A JP 2011223668 A JP2011223668 A JP 2011223668A JP 2010087597 A JP2010087597 A JP 2010087597A JP 2010087597 A JP2010087597 A JP 2010087597A JP 2011223668 A JP2011223668 A JP 2011223668A
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Prior art keywords
switch
end
power
storage element
power storage
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JP2010087597A
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Japanese (ja)
Inventor
Kazuhiko Futai
Shingo Ohashi
和彦 二井
紳悟 大橋
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Sumitomo Electric Ind Ltd
住友電気工業株式会社
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M2001/0048Circuits or arrangements for reducing losses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion
    • Y02B70/14Reduction of losses in power supplies
    • Y02B70/1491Other technologies for reduction of losses, e.g. non-dissipative snubbers, diode reverse recovery losses minimisation, zero voltage switching [ZVS], zero current switching [ZCS] or soft switching converters

Abstract

PROBLEM TO BE SOLVED: To provide an insulating circuit for power transmission and a power conversion device which are capable of improving power efficiency in a circuit which transmits power while insulating an input side and an output side from each other.SOLUTION: An insulating circuit 101 for power transmission includes: an input switch part 21 which includes switches Z1 and Z2, and supplies power received at a first end of the switch Z1 and a first end of the switch Z2 to a first storage element C1; and an output switch part 22 which includes switches Z3 and Z4, and supplies the power stored in the first storage element C1 to a second storage element C2. The switches Z1 to Z4 include N-channel MOS transistors.

Description

  The present invention relates to an insulating circuit for power transmission and a power converter, and more particularly to an insulating circuit for power transmission and a power converter that transmit power while insulating between an input side and an output side.

  2. Description of the Related Art Power converters for charging driving main batteries such as electric vehicles (EV) and plug-in hybrid vehicles (HV) using ordinary household AC power have been developed.

  Although not intended to charge such a main battery such as an EV, an example of an insulating circuit for a power supply device that converts AC power into DC power is disclosed in, for example, Japanese Patent No. 3595329 (Patent Document 1). Are listed. That is, the power supply device insulating circuit includes a rectifier circuit that converts an AC voltage into a DC voltage, a first capacitor that reduces a pulsating current component remaining in a DC current supplied from the rectifier circuit, and the first capacitor. A first switch circuit that simultaneously opens and closes a positive side and a negative side of a direct current supplied from a capacitor; a second capacitor that stores current supplied from the first switch circuit; and a second capacitor A second switch circuit that simultaneously opens and closes a positive side and a negative side of the supplied direct current; and a third capacitor that holds the current supplied from the second switch circuit and discharges the current to the load side. Further, the ON time is set shorter than the OFF time while the ON time is set to be complementary to the control signal φ1 configured by the square wave set shorter than the OFF time and the control signal φ1. A gate control circuit for generating the control signal φ2 is provided. The first switch circuit is opened and closed by the control signal φ1, and the second switch circuit is opened and closed by the control signal φ2.

  In the positive switch of the first switch circuit, the cathode terminal of at least one blocking diode and the source terminal of at least one MOSFET (Metal Oxide Semiconductor Field Effect Transistor) are connected. The switch is provided between the positive terminals of the first capacitor and the second capacitor. The drain terminal of the MOSFET of the switch is connected to the positive terminal of the second capacitor, and the anode terminal of the blocking diode is connected to the positive terminal of the first capacitor.

  In the positive switch of the second switch circuit, the cathode terminal of at least one blocking diode and the source terminal of at least one MOSFET are connected. The switch is provided between the positive side terminals of the second capacitor and the third capacitor. The drain of the MOSFET of the switch is connected to the positive terminal of the third capacitor, and the anode terminal of the blocking diode is connected to the positive terminal of the second capacitor.

  With such a configuration, an AC voltage can be converted to a DC voltage without using a power transformer that occupies a large volume, and the AC power supply side and the load side can be electrically insulated.

Japanese Patent No. 3595329

  However, in the power supply device insulating circuit described in Patent Document 1, a P-channel MOSFET is used as the MOSFET on the plus side of the switch circuit in consideration of the current direction in the circuit. For this reason, the conduction loss increases due to the large ON resistance of the switch on the plus side of the switch circuit, and the switching loss increases due to the slow switching speed, resulting in a reduction in power efficiency.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide power transmission capable of improving power efficiency in a circuit that transmits power while insulating the input side and the output side. It is providing the insulation circuit for power supplies and a power converter device.

  In order to solve the above-described problem, an insulating circuit for power transmission according to an aspect of the present invention includes a first power storage element having a first end and a second end, and a second power having a first end and a second end. A first switch having a power storage element, a first end, and a second end electrically connected to the first end of the first power storage element, and a first switch and a first switch of the first power storage element A second switch having a second end electrically connected to the second end, wherein the first power storage receives power received at the first end of the first switch and the first end of the second switch. An input switch unit for supplying to the element, a third switch connected between the first end of the first power storage element and the first end of the second power storage element, and the first power storage element And a fourth switch connected between the second end of the second power storage element and the second end of the second power storage element. And an output switch unit for supplying the power stored in the first power storage element to the second power storage element, wherein the first switch to the fourth switch include N-channel MOS transistors. Including.

  As described above, the configuration using the N-channel MOS transistor having higher electron mobility and hole mobility than the P-channel MOS transistor realizes higher power efficiency than the power supply device insulating circuit described in Patent Document 1. It becomes possible to do. Further, unlike the power supply device isolation circuit described in Patent Document 1, the gate control signal to the first switch and the gate control signal to the second switch are shared, and the gate control signal to the third switch In addition, since the gate control signal to the fourth switch can be shared, the size and the processing can be simplified.

  Preferably, the input switch unit further includes a first diode connected to a first end of the first switch and a second diode connected to a first end of the second switch. The output switch unit further includes a third diode connected between the third switch and the first end of the second power storage element, the fourth switch, and the second power storage element. And a fourth diode connected between the second end of the first diode and the fourth diode.

  With such a configuration, the first switch to the fourth switch can be realized by one half bridge module.

  More preferably, the first switch to the fourth switch are included in one half-bridge module.

  With such a configuration, when manufacturing a large-capacity circuit, the MOS transistor can be configured by a general half-bridge module, so that the cost reduction, size reduction, easy wiring, and assembly process can be achieved. Simplification is possible.

  Preferably, the first switch to the fourth switch include an N-channel IGBT.

  By using the IGBT instead of the MOS transistor in the power transmission insulating circuit, the conduction loss of the power transmission insulating circuit can be further reduced.

  Preferably, the power transmission insulating circuit further includes a third power storage element connected between a first end of the first switch and a first end of the second switch.

  With such a configuration, it is possible to prevent the ripple of the input current to the power transmission insulating circuit and to stabilize the circuit operation.

  In order to solve the above problems, a power conversion device according to an aspect of the present invention is a power conversion device for converting alternating current power into direct current power and supplying it to a load, and rectifies the received alternating current power. And a power transmission insulating circuit for transmitting the power rectified by the rectifying unit to the load while insulating between the rectifying unit and the load. A first power storage element having a first end and a second end; a second power storage element having a first end and a second end; a first end that receives power rectified by the rectifier; and the first A first switch having a second end electrically connected to the first end of the power storage element, a first end receiving the power rectified by the rectifier, and a second end of the first power storage element The second end electrically connected to the An input switch unit for supplying the first power storage element with the power rectified by the rectification unit, a first end of the first power storage element, and the second power storage element A third switch connected between the first end of the first power storage element and a fourth switch connected between the second end of the first power storage element and the second end of the second power storage element. An output switch unit for supplying power stored in the first power storage element to the second power storage element, wherein the first switch to the fourth switch include an N-channel MOS transistor. .

  As described above, the configuration using the N-channel MOS transistor having higher electron mobility and hole mobility than the P-channel MOS transistor realizes higher power efficiency than the power supply device insulating circuit described in Patent Document 1. It becomes possible to do.

  According to the present invention, it is possible to improve power efficiency in a circuit that transmits power while insulating the input side and the output side.

It is a figure which shows the structure of the power converter device which concerns on the 1st Embodiment of this invention. It is a figure which shows the switching operation | movement by the insulation circuit for electric power transmission which concerns on the 1st Embodiment of this invention. It is a figure which shows the electron mobility and hole mobility in each material. It is a figure which shows the structure of the power converter device which concerns on the 2nd Embodiment of this invention. It is a figure which shows the withstand voltage of a switching element, and the relationship of on-resistance.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

[Configuration and basic operation]
FIG. 1 is a diagram showing a configuration of a power conversion device according to the first embodiment of the present invention.

  Referring to FIG. 1, power conversion device 201 includes a power transmission insulating circuit 101 and a rectifying unit 102. The power transmission insulating circuit 101 includes capacitors C <b> 0 to C <b> 2, an input switch unit 21, an output switch unit 22, and a control unit 14. Input switch unit 21 includes switches Z1 and Z2 and diodes D1 and D2. The output switch unit 22 includes switches Z3 and Z4 and diodes D3 and D4.

  In the power transmission insulating circuit 101, the switches Z1 to Z4 are, for example, N-channel MOS (Metal Oxide Semiconductor) transistors. The switches Z1 and Z3 are included in one half bridge module MJ1. The switches Z2 and Z4 are included in one half bridge module MJ2. The material of the switches Z1 to Z4 is, for example, SiC (Silicon Carbide).

  Here, the first end and the second end of the switch Z1 correspond to the drain and source of the switch Z1, respectively, the first end and the second end of the switch Z2 correspond to the source and drain of the switch Z2, respectively, The first end and the second end correspond to the drain and source of the switch Z3, respectively, and the first end and the second end of the switch Z4 correspond to the source and drain of the switch Z4, respectively.

  The diodes D <b> 1 to D <b> 4 are provided to prevent a backflow of current in the power transmission insulating circuit 101. The material of the diodes D1 to D4 is, for example, SiC.

  Switch Z1 has a first end electrically connected to first end T11 of capacitor C0 via diode D1, and a second end electrically connected to first end T13 of capacitor C1. Switch Z2 has a first end electrically connected to second end T12 of capacitor C0 via diode D2, and a second end electrically connected to second end T14 of capacitor C1. Switch Z3 has a first end electrically connected to first end T13 of capacitor C1, and a second end electrically connected to first end T15 of capacitor C2 via diode D3. Switch Z4 has a first end electrically connected to second end T14 of capacitor C1, and a second end electrically connected to second end T16 of capacitor C2 via diode D4.

  The diode D1 is connected between the first end T11 of the capacitor C0 and the first end of the switch Z1. The diode D2 is connected between the second terminal T12 of the capacitor C0 and the first terminal of the switch Z2. The diode D3 is connected between the first end T15 of the capacitor C2 and the second end of the switch Z3. The diode D4 is connected between the second terminal T16 of the capacitor C2 and the second terminal of the switch Z4.

  More specifically, the diode D1 has an anode electrically connected to the first terminal T11 of the capacitor C0 and a cathode electrically connected to the drain of the switch Z1. The diode D2 has an anode electrically connected to the source of the switch Z2, and a cathode electrically connected to the second terminal T12 of the capacitor C0. The diode D3 has an anode electrically connected to the source of the switch Z3 and a cathode electrically connected to the first terminal T15 of the capacitor C2. The diode D4 has an anode that is electrically connected to the second terminal T16 of the capacitor C2, and a cathode that is electrically connected to the drain of the switch Z4.

  Switch Z1 has a drain electrically connected to the cathode of diode D1, a source electrically connected to first terminal T13 of capacitor C1, and a gate for receiving gate control signal G1 from control unit 14. . Switch Z2 has a drain electrically connected to second terminal T14 of capacitor C1, a source electrically connected to the anode of diode D2, and a gate for receiving gate control signal G2 from control unit 14. . Switch Z3 has a drain electrically connected to first terminal T13 of capacitor C1, a source electrically connected to the anode of diode D3, and a gate for receiving gate control signal G3 from control unit 14. . Switch Z4 has a drain electrically connected to the cathode of diode D4, a source electrically connected to second end T14 of capacitor C1, and a gate for receiving gate control signal G4 from control unit 14. .

  The power converter 201 converts AC power supplied from the AC power source 202 into DC power and supplies the DC power to the load 203. The load 203 is a main battery for driving such as EV and plug-in type HV, for example.

  The rectifying unit 102 includes, for example, a diode bridge, and full-wave rectifies the AC power received from the AC power source 202 and outputs the rectified power to the power transmission insulating circuit 101.

  In the power transmission insulating circuit 101, the capacitor C0 stores the power rectified by the rectifying unit 102. The input switch unit 21 supplies the power received at the first end of the switch Z1 and the first end of the switch Z2, that is, the power stored in the capacitor C0, to the capacitor C1. The output switch unit 22 supplies the power stored in the capacitor C1 to the capacitor C2. The electric power stored in the capacitor C2 is discharged and supplied to the load 203.

  The control unit 14 switches the switches Z1 to Z4 on and off by outputting the gate drive signals G1 to G4 to the switches Z1 to Z4. The power transmission insulating circuit 101 transmits the power stored in the capacitor C0 to the load 203 while insulating between the rectifying unit 102 and the load 203 by switch control of the control unit 14.

[Operation]
Next, an operation when the power transmission insulating circuit according to the first embodiment of the present invention performs power transmission will be described with reference to the drawings.

  FIG. 2 is a diagram showing a switching operation by the power transmission insulating circuit according to the first embodiment of the present invention.

  With reference to FIG. 2, first, in a period T1, the control unit 14 turns on the switch Z1, turns on the switch Z2, turns off the switch Z3, and turns off the switch Z4. Thereby, the electric charge stored in the capacitor C0 is discharged, and the discharged electric charge is stored in the capacitor C1. Since the switches Z3 and Z4 are turned off, insulation between the rectifying unit 102 and the load 203 is ensured.

  Next, the control unit 14 turns off the switches Z1 to Z4 in the period T2. This provides a dead time for ensuring insulation between the input side and the output side of the power transmission insulating circuit 101. That is, it is possible to prevent a short circuit between the input side and the output side of the power transmission insulating circuit 101, that is, between the rectifying unit 102 and the load 203, via each switch in the input switch unit 21 and each switch in the output switch unit 22. it can.

  Next, in the period T3, the control unit 14 turns off the switch Z1, turns off the switch Z2, turns on the switch Z3, and turns on the switch Z4. Thereby, the electric charge stored in the capacitor C1 is discharged, and the discharged electric charge is stored in the capacitor C2. Since the switches Z1 and Z2 are turned off, insulation between the rectifying unit 102 and the load 203 is ensured.

  Next, the control unit 14 turns off the switches Z1 to Z4 in the period T4. As a result, similarly to the period T2, a dead time for ensuring insulation between the input side and the output side of the power transmission insulating circuit 101 is provided.

  Here, in the period T <b> 1 to T <b> 4, the capacitor C <b> 1 is charged with the electric power from the rectifying unit 102, and the electric power stored in the capacitor C <b> 2 is discharged and supplied to the load 203. In the periods T2 and T4, there is no charge movement in the capacitor C1.

  The control unit 14 then repeats the period T1, the period T2, the period T3, and the period T4 in this order to cooperate with the rectifying unit 102 while insulating between the input side and the output side of the power transmission insulating circuit 101. The AC power from the AC power source 202 is converted into DC power and supplied to the load 203.

  By the way, in the insulation circuit for power supply devices described in Patent Document 1, a P-channel MOSFET is used as the MOSFET on the plus side of the switch circuit in consideration of the current direction in the circuit. For this reason, the on-resistance of the switch on the plus side of the switch circuit is large, so that the conduction loss is large, and the switching loss is large because the switching speed is slow. there were.

  Here, an N-channel MOSFET and a P-channel MOSFET are compared. FIG. 3 is a diagram showing electron mobility and hole mobility in each material. The source of FIG. 3 is co-edited by Kazuo Arai and Sadafumi Yoshida, “Basics and Applications of SiC Devices” (Ohm, 2003), p. 14 It is.

  The main carrier of the N-channel MOSFET is an electron, and the main carrier of the P-channel MOSFET is a hole. In general, the electron mobility is faster than the hole mobility.

  Referring to FIG. 3, in the case of Si, the electron mobility is about 3.3 times the hole mobility. In the case of 4H—SiC, the electron mobility is about 8.3 times the hole mobility, and in the case of GaN, it is about 2.3 times.

  Therefore, when compared with devices having the same chip area and the same channel density, the P-channel MOSFET has a higher on-resistance than the N-channel MOSFET, so that the conduction loss is large and the switching speed is slow, so that the switching loss is large. Become. Therefore, it can be said that the N-channel MOSFET is superior as a power device. In fact, in the examples of SiC-MOSFETs that are being researched and developed as next-generation power devices, all reports from major research institutions in recent years are related to N-channel MOSFETs, and there are no reports on P-channel MOSFETs. .

  In the power transmission insulating circuit according to the first embodiment of the present invention, the switches Z1 to Z4 are N-channel MOS transistors. That is, N-channel MOSFETs are used as switching elements on both the plus side and the minus side. With such a configuration, it is possible to realize high power efficiency as compared with the power supply device insulating circuit described in Patent Document 1. Further, unlike the power supply device isolation circuit described in Patent Document 1, the gate control signal G1 to the switch Z1 and the gate control signal G2 to the switch Z2 are shared, and the gate control signal G3 and the switch Z4 to the switch Z3 are shared. Since the gate control signal G4 can be shared, the size and the processing can be simplified.

  Further, in the power transmission insulating circuit according to the first embodiment of the present invention, the input switch unit 21 is connected to the diode D1 connected to the first end of the switch Z1 and to the first end of the switch Z2. And diode D2. The output switch unit 22 includes a diode D3 connected between the switch Z3 and the first terminal T15 of the capacitor C2, and a diode D4 connected between the switch Z4 and the second terminal T16 of the capacitor C2. Including.

  With such a configuration, the switch Z1 and the switch Z3 can be realized by one half bridge module MJ1, and the switch Z2 and the switch Z4 can be realized by one half bridge module MJ2. In other words, when manufacturing a large-capacity circuit, the MOSFET can be configured with a general half-bridge module, so that the cost, size, wiring, and assembly process can be simplified. Become.

  Further, in the power transmission insulating circuit according to the first embodiment of the present invention, the material of the N-channel MOSFET serving as the switch is SiC. Thus, by making the switch into a SiC-MOSFET, the conduction loss and the switching loss of the power transmission insulating circuit 101 can be further reduced.

  In the power transmission insulating circuit according to the first embodiment of the present invention, the diodes D1 to D4 are made of SiC. Thus, by making the reverse blocking diode SiC, the conduction loss of the power transmission insulating circuit can be further reduced.

  In the power transmission insulating circuit according to the first embodiment of the present invention, the switches Z1 to Z4 are N-channel MOS transistors. However, the present invention is not limited to this. Switches Z1 to Z4 may include other elements in addition to the N-channel MOS transistor.

  Further, the power transmission insulating circuit 101 may be configured not to include the capacitor C0. However, the provision of the capacitor C0 provides the effect of preventing the ripple of the input current to the power transmission insulating circuit 101 and stabilizing the circuit operation. Further, when the rectifying unit 102 is provided with a capacitor for storing rectified power, a configuration in which the capacitor C0 is not provided in the power transmission insulating circuit 101 is possible.

  Further, the power transmission insulating circuit according to the first embodiment of the present invention is configured to include the capacitors C0 to C2, but is not limited to the capacitor and includes other power storage elements such as a coil (inductor). It may be a configuration.

  Further, in the power transmission insulating circuit according to the first embodiment of the present invention, the switches Z1 and Z3 are included in one half-bridge module MJ1, and the switches Z2 and Z4 are included in one half-bridge module MJ2. However, the present invention is not limited to this. A configuration in which one set of the switches Z1 and Z3 and the switches Z2 and Z4 is included in one half-bridge module may be employed.

  Next, another embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

<Second Embodiment>
The present embodiment relates to a power transmission insulating circuit in which the type of switching element is changed as compared with the power transmission insulating circuit according to the first embodiment. The contents other than those described below are the same as the power transmission insulating circuit according to the first embodiment.

  FIG. 4 is a diagram showing a configuration of a power conversion device according to the second embodiment of the present invention.

  Referring to FIG. 4, power conversion device 211 includes a power transmission insulating circuit 111 and a rectifying unit 102. The power transmission insulating circuit 111 includes capacitors C <b> 0 to C <b> 2, an input switch unit 31, an output switch unit 32, and a control unit 14. Input switch unit 31 includes switches Z11 and Z12 and diodes D1 and D2. The output switch unit 32 includes switches Z13 and Z14 and diodes D3 and D4.

  In the power transmission insulating circuit 111, the switches Z11 to Z14 are, for example, N-channel IGBTs (Insulated Gate Bipolar Transistors). The switches Z11 and Z13 are included in one half bridge module MJ11. The switches Z12 and Z14 are included in one half bridge module MJ12. The material of the switches Z11 to Z14 is, for example, SiC (Silicon Carbide).

  The diodes D <b> 1 to D <b> 4 are provided to prevent a backflow of current in the power transmission insulating circuit 111. The material of the diodes D1 to D4 is, for example, SiC.

  Switch Z11 has a first end electrically connected to first end T11 of capacitor C0 via diode D1, and a second end electrically connected to first end T13 of capacitor C1. Switch Z12 has a first end electrically connected to second end T12 of capacitor C0 via diode D2, and a second end electrically connected to second end T14 of capacitor C1. Switch Z13 has a first end electrically connected to first end T13 of capacitor C1, and a second end electrically connected to first end T15 of capacitor C2 via diode D3. Switch Z14 has a first end electrically connected to second end T14 of capacitor C1, and a second end electrically connected to second end T16 of capacitor C2 via diode D4.

  The diode D1 is connected between the first end T11 of the capacitor C0 and the first end of the switch Z11. The diode D2 is connected between the second terminal T12 of the capacitor C0 and the first terminal of the switch Z12. The diode D3 is connected between the first end T15 of the capacitor C2 and the second end of the switch Z13. The diode D4 is connected between the second end T16 of the capacitor C2 and the second end of the switch Z14.

  More specifically, the diode D1 has an anode electrically connected to the first terminal T11 of the capacitor C0 and a cathode electrically connected to the collector of the switch Z11. The diode D2 has an anode electrically connected to the emitter of the switch Z12 and a cathode electrically connected to the second terminal T12 of the capacitor C0. Diode D3 has an anode electrically connected to the emitter of switch Z13 and a cathode electrically connected to first terminal T15 of capacitor C2. The diode D4 has an anode electrically connected to the second terminal T16 of the capacitor C2, and a cathode electrically connected to the collector of the switch Z14.

  Switch Z11 has a collector electrically connected to the cathode of diode D1, an emitter electrically connected to first terminal T13 of capacitor C1, and a gate for receiving gate control signal G1 from control unit 14. . Switch Z12 has a collector electrically connected to second end T14 of capacitor C1, an emitter electrically connected to the anode of diode D2, and a gate for receiving gate control signal G2 from control unit 14. . Switch Z13 has a collector electrically connected to first terminal T13 of capacitor C1, an emitter electrically connected to the anode of diode D3, and a gate for receiving gate control signal G3 from control unit 14. . Switch Z14 has a collector electrically connected to the cathode of diode D4, an emitter electrically connected to second end T14 of capacitor C1, and a gate for receiving gate control signal G4 from control unit 14. .

  That is, the first end and the second end of the switch Z11 correspond to the collector and the emitter of the switch Z11, respectively, the first end and the second end of the switch Z12 correspond to the emitter and the collector of the switch Z12, respectively, The first end and the second end correspond to the collector and the emitter of the switch Z13, respectively, and the first end and the second end of the switch Z14 correspond to the emitter and the collector of the switch Z14, respectively.

  The power converter 211 converts AC power supplied from the AC power source 202 into DC power and supplies the DC power to the load 203. The load 203 is a main battery for driving such as EV and plug-in type HV, for example.

  The rectifying unit 102 includes, for example, a diode bridge, and full-wave rectifies the AC power received from the AC power source 202 and outputs it to the power transmission insulating circuit 111.

  In the power transmission insulating circuit 111, the capacitor C0 stores the power rectified by the rectifying unit 102. The input switch unit 31 supplies the power received at the first end of the switch Z11 and the first end of the switch Z12, that is, the power stored in the capacitor C0, to the capacitor C1. The output switch unit 32 supplies the power stored in the capacitor C1 to the capacitor C2. The electric power stored in the capacitor C2 is discharged and supplied to the load 203.

  The control unit 14 switches the switches Z11 to Z14 on and off by outputting the gate drive signals G1 to G4 to the switches Z11 to Z14. The power transmission insulating circuit 111 transmits the power stored in the capacitor C0 to the load 203 while insulating the capacitor C0 and the load 203 by switch control of the control unit 14.

  In the power transmission insulating circuit according to the second embodiment of the present invention, the switches Z11 to Z14 include N-channel IGBTs. That is, the N-channel IGBT is used as a switching element on both the plus side and the minus side.

  FIG. 5 is a diagram showing the relationship between the withstand voltage and the on-resistance of the switching element. The source of FIG. 5 is co-edited by Kazuo Arai and Sadafumi Yoshida, “Basics and Applications of SiC Devices” (Ohm, 2003), p. 29. It is.

  Referring to FIG. 5, in comparison between Si devices, it can be seen that the on-resistance of the IGBT is lower than that of the MOSFET at a withstand voltage of 600 V or higher. Therefore, when the breakdown voltage of the device required for the power transmission insulating circuit is 600 V or more, the power transmission according to the first embodiment of the present invention is performed by using the IGBT instead of the MOSFET in the power transmission insulating circuit. The conduction loss of the power transmission insulating circuit can be further reduced as compared with the power insulating circuit.

  Therefore, in the power transmission insulating circuit according to the second embodiment of the present invention, power efficiency can be improved in a circuit that transmits power while insulating the input side and the output side.

  Further, in the power transmission insulating circuit according to the second embodiment of the present invention, the input switch unit 31 includes the diode D1 connected between the first end T11 of the capacitor C0 and the first end of the switch Z11. And a diode D2 connected between the second terminal T12 of the capacitor C0 and the first terminal of the switch Z12. The output switch section 32 includes a diode D3 connected between the second end of the switch Z13 and the first end T15 of the capacitor C2, and between the second end of the switch Z14 and the second end T16 of the capacitor C2. And a diode D4 connected to the.

  With such a configuration, the switch Z11 and the switch Z13 can be realized by one half-bridge module MJ11, and the switch Z12 and the switch Z14 can be realized by one half-bridge module MJ12. That is, when manufacturing a large-capacity circuit, the IGBT can be configured with a general half-bridge module, so that the cost can be reduced, the size can be reduced, the wiring can be facilitated, and the assembly process can be simplified. Become.

  Since other configurations and operations are the same as those of the power transmission insulating circuit according to the first embodiment, detailed description thereof will not be repeated here.

  In the power transmission insulating circuit according to the second embodiment of the present invention, the switches Z11 to Z14 are N-channel IGBTs. However, the present invention is not limited to this. Switches Z11-Z14 may include other elements in addition to the N-channel IGBT.

  Further, in the power transmission insulating circuit according to the second embodiment of the present invention, the switches Z11 and Z13 are included in one half-bridge module MJ11, and the switches Z12 and Z14 are included in one half-bridge module MJ12. However, the present invention is not limited to this. A configuration in which one set of the switches Z11 and Z13 and the switches Z12 and Z14 is included in one half-bridge module may be employed.

  The above embodiment should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

DESCRIPTION OF SYMBOLS 14 Control part 21,31 Input switch part 22,32 Output switch part 101,111 Power transmission insulation circuit 102 Rectifier part 201,211 Power converter 202 AC power supply 203 Load C0-C2 Capacitor D1, D2, D3, D4 Diode MJ1 , MJ2, MJ11, MJ12 half bridge module Z1, Z2, Z3, Z4, Z11, Z12, Z13, Z14 switch

Claims (6)

  1. A first power storage element having a first end and a second end;
    A second power storage element having a first end and a second end;
    A first switch having a first end and a second end electrically connected to the first end of the first power storage element, and a first switch and the second end of the first power storage element and the first switch A second switch having a second end electrically connected to the first power storage element, the power received at the first end of the first switch and the first end of the second switch An input switch section for
    A third switch connected between a first end of the first power storage element and a first end of the second power storage element, and a second end of the first power storage element and the second power storage element Including a fourth switch connected between the second end of the first power storage element, and an output switch unit for supplying the power stored in the first power storage element to the second power storage element,
    The first switch to the fourth switch are power transmission isolation circuits including N-channel MOS (Metal Oxide Semiconductor) transistors.
  2. The input switch unit further includes:
    A first diode connected to a first end of the first switch;
    A second diode connected to a first end of the second switch;
    The output switch unit further includes:
    A third diode connected between the third switch and the first end of the second storage element;
    2. The power transmission insulating circuit according to claim 1, comprising a fourth diode connected between the fourth switch and a second end of the second power storage element.
  3.   The set of the first switch and the third switch and at least one of the set of the second switch and the fourth switch are included in one half-bridge module. Insulation circuit for power transmission.
  4.   4. The power transmission insulating circuit according to claim 1, wherein each of the first switch to the fourth switch includes an N-channel IGBT (Insulated Gate Bipolar Transistor). 5.
  5. The power transmission insulating circuit further includes:
    5. The power transmission device according to claim 1, further comprising a third power storage element connected between a first end of the first switch and a first end of the second switch. 6. Insulation circuit.
  6. A power conversion device for converting AC power to DC power and supplying it to a load,
    A rectifying unit for rectifying the received AC power;
    A power transmission insulating circuit for transmitting the power rectified by the rectifying unit to the load while insulating between the rectifying unit and the load;
    The power transmission insulating circuit is:
    A first power storage element having a first end and a second end;
    A second power storage element having a first end and a second end;
    A first switch that has a first end that receives power rectified by the rectifying unit, and a second end that is electrically connected to the first end of the first power storage element, and has been rectified by the rectifying unit A second switch having a first end for receiving power and a second end electrically connected to a second end of the first power storage element, wherein the power rectified by the rectifier is the first switch An input switch unit for supplying power to the storage element;
    A third switch connected between a first end of the first power storage element and a first end of the second power storage element, and a second end of the first power storage element and the second power storage element Including a fourth switch connected between the second end of the first power storage element, and an output switch unit for supplying the power stored in the first power storage element to the second power storage element,
    The first switch to the fourth switch are power converters including N-channel MOS transistors.
JP2010087597A 2010-04-06 2010-04-06 Insulating circuit for power transmission and power conversion device Pending JP2011223668A (en)

Priority Applications (1)

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Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010087597A JP2011223668A (en) 2010-04-06 2010-04-06 Insulating circuit for power transmission and power conversion device
PCT/JP2011/050170 WO2011125345A1 (en) 2010-04-06 2011-01-07 Isolated circuit for power transfer and power conversion device

Publications (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013191635A (en) * 2012-03-12 2013-09-26 Mitsubishi Electric Corp Connection box and photovoltaic power generation system
KR101428527B1 (en) * 2011-12-14 2014-08-11 미쓰비시덴키 가부시키가이샤 Power semiconductor device
WO2014170334A1 (en) * 2013-04-16 2014-10-23 Bayerische Motoren Werke Aktiengesellschaft Circuit assembly for transferring energy

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979221B2 (en) * 2002-08-19 2007-09-19 富士電機システムズ株式会社 Power converter
JP2004222379A (en) * 2003-01-10 2004-08-05 Sumitomo Electric Ind Ltd Dc/dc converter
JP3595329B1 (en) * 2003-07-30 2004-12-02 有限会社オデオ Power supply insulation circuit
JP4619692B2 (en) * 2004-05-28 2011-01-26 株式会社東芝 Power conversion device and superconducting power storage device
JP2008079425A (en) * 2006-09-21 2008-04-03 Sumitomo Electric Ind Ltd Switching power supply
JP2008079427A (en) * 2006-09-21 2008-04-03 Sumitomo Electric Ind Ltd Switching power supply
JP2008079426A (en) * 2006-09-21 2008-04-03 Sumitomo Electric Ind Ltd Switching power supply

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101428527B1 (en) * 2011-12-14 2014-08-11 미쓰비시덴키 가부시키가이샤 Power semiconductor device
JP2013191635A (en) * 2012-03-12 2013-09-26 Mitsubishi Electric Corp Connection box and photovoltaic power generation system
WO2014170334A1 (en) * 2013-04-16 2014-10-23 Bayerische Motoren Werke Aktiengesellschaft Circuit assembly for transferring energy
US9960605B2 (en) 2013-04-16 2018-05-01 Bayerische Motoren Werke Aktiengesellschaft Circuit arrangement for transferring energy

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