JP2011165581A - Vapor deposition mask, vapor deposition device, and thin film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition mask, a vapor deposition device and a vapor deposition method, capable of being applied to a large-sized substrate. <P>SOLUTION: Openings 11 are formed on the vapor deposition mask 10 so that distances between their centers may become two times the distance between pixels 51a<SB>1</SB>, 51a<SB>2</SB>of a substrate 50. The deposition mask 10 is arranged on a substrate 50, and in the state that they are positioned so that the openings 11 and shielded parts 19 are arranged alternately on each of the pixels 51a<SB>1</SB>, 51a<SB>2</SB>, 51a<SB>x</SB>, the pixel 51a<SB>1</SB>is deposited opposing the opening 11, and then the deposition mask 10 is shifted by the distance between the centers of the pixels 51a<SB>1</SB>, 51a<SB>2</SB>, and the opening 11 is positioned above undeposited pixels 51a<SB>2</SB>, 51a<SB>x</SB>opposing the shielded part 19 before the shift and in this state a thin film is deposited on the undeposited pixels 51a<SB>2</SB>, 51a<SB>x</SB>. Since the distance between the openings 11 is wider than a conventional one, a fear of damaging the deposition mask 10 at the time of forming openings 11 can be reduced to facilitate a production of a large-sized deposition mask 10. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an evaporation mask, an evaporation apparatus, and a thin film forming method, and more particularly to a technique for forming an organic EL light emitting layer on a large substrate.

At present, a vacuum deposition method using a deposition mask is generally used as a method for producing an organic EL. The vapor deposition mask needs to minimize thermal expansion in order to transfer a high-definition pattern, and Invar is mainly used as the material of the vapor deposition mask.
FIG. 1 shows a plan view of a substrate 50 that is a deposition object. On the substrate 50, a pixel 51 on which a red light emitting layer is to be formed is arranged so that its centers are positioned on a plurality of straight lines 53a to 53c that are parallel to each other and equally spaced, and the pixels of the straight lines 53a to 53c. The center-to-center distances 51 are equal.

FIG. 15 shows a plan view of a conventional pixel-type deposition mask 110. On the vapor deposition mask 110, a plurality of openings 111 having the same shape and the same size as the pixels 51 are positioned on a plurality of mask reference lines 113a to 113c that are parallel to each other and spaced at the same intervals as the straight lines 53a to 53c. The distance between the centers of the openings 111 on the mask reference lines 113a to 113c is equal to the distance between the centers of the pixels 51 of the straight lines 53a to 53c.
FIG. 16 shows a plan view of a conventional stripe-type deposition mask 110. A plurality of strip-shaped openings 111 longer than the entire length of the pixels 51 on the straight lines 53 a to 53 c are provided on the vapor deposition mask 110 so as to be positioned on the same mask reference line 113. The center-to-center distance is set equal to the distance between the straight lines 53a to 53c.

In both the pixel-type and stripe-type vapor deposition masks 110, the vapor deposition mask 110 and the substrate 50 are arranged so that the mask marks 112 included in the vapor deposition mask 110 overlap the substrate marks 52 included in the substrate 50. In this state, the opening 111 is configured to overlap all the pixels 51 of the same color.
As shown in FIG. 1, each light emitting layer region has, for example, a rectangular shape with a length of 110 μm in the direction along the straight lines 53a to 53c and a length of 70 μm in the direction perpendicular to the straight line 53a to 53c. Are arranged on the substrate 50 at intervals of.
In order to use for vapor deposition of the substrate 50 of this size, in the conventional pixel type vapor deposition mask 110, it is necessary to form the adjacent openings 111 along the mask reference lines 113a to 113c at intervals of 10 μm. Further, in the conventional stripe-type deposition mask 110, it is necessary to form the adjacent openings 111 at an interval of 170 μm. In particular, in the pixel-type vapor deposition mask 110, since the interval between the adjacent openings 111 is narrow, the vapor deposition mask 110 may be damaged due to insufficient strength when the openings 111 are formed.

  In order to increase the productivity of organic EL production, there is a demand for producing an organic EL with a large substrate, but it is difficult to produce a large vapor deposition mask because there is a risk of damage as described above when forming an opening, It was a problem. In particular, it was difficult to manufacture a vapor deposition mask corresponding to a large substrate of G5 size or larger.

JP 2000-188179 A

  The present invention was created in order to solve the above-described disadvantages of the prior art, and an object thereof is to provide a vapor deposition mask, a vapor deposition apparatus, and a vapor deposition method that can be applied to a large substrate.

In order to solve the above-described problems, the present invention provides a vapor deposition mask configured to allow vapor to reach a plurality of pixels on which the same material is deposited on a substrate, and the vapor passes through some of the pixels. The distance between the centers of the openings adjacent in one direction of the vapor deposition mask is a multiple of the distance between the centers of the pixels formed in the same material and adjacent in the one direction. It is a vapor deposition mask.
The present invention is a vapor deposition mask, wherein the one direction is a vapor deposition mask formed of the same material and having a short interval between adjacent pixels.
The present invention is an evaporation mask having a plurality of mask marks arranged at the same center distance as the center distance between the pixels adjacent in the one direction.
The present invention is a vapor deposition apparatus, wherein the vapor deposition mask, a vacuum chamber in which the vapor deposition mask is disposed, a vacuum exhaust device that evacuates the vacuum chamber, and vapor of a vapor deposition material in the vacuum chamber. It is a vapor deposition apparatus which has the vapor deposition source to discharge | emit, and the alignment apparatus which aligns the said vapor deposition mask and the said board | substrate.
The present invention is a vapor deposition device, wherein the alignment device includes a mask mark of the vapor deposition mask, a detection device for detecting a substrate mark of the substrate, and the vapor deposition mask in a direction parallel to the vapor deposition mask surface. And a mask moving device that rotates around a rotation axis perpendicular to the surface of the vapor deposition mask, and a direction and amount of movement of the vapor deposition mask by the mask moving device based on a detection result of the detection device And a control device for determining the direction of rotation and the amount of rotation of the vapor deposition mask.
In the present invention, a substrate having a plurality of pixels formed of the same material, a deposition source, and a deposition mask having a plurality of openings are disposed in a vacuum evacuated vacuum chamber, and deposition is performed on the substrate. In the thin film forming method, the pixels are arranged in a matrix, the deposition mask has openings, and a center distance between rows of the openings is a multiple of a center distance between rows of the pixels. Depositing the openings on the pixels on the odd rows, forming a film on the odd-numbered rows, moving the deposition mask and the substrate relative to each other in the column direction by a multiple of the center distance of the pixels, and on the even rows And depositing the opening on the pixel to form a thin film.
In the present invention, a substrate having a plurality of pixels that are spaced apart from each other is disposed in a vacuum chamber that has been evacuated, and vapor of a deposition material is released from the deposition source into the vacuum chamber to form a thin film. A thin film forming method for forming a thin film on the pixel, wherein the center of each pixel is arranged on any one of a plurality of substrate reference lines parallel to each other, and the center of the pixel on the substrate reference line The deposition mask in which the distance between the centers of the openings adjacent to each other in one direction is equal to the distance between the centers of the pixels formed in the same material and the pixels adjacent to each other in the one direction. The substrate and the vapor deposition mask are arranged so that the openings and the shielding portions that shield the vapor are alternately arranged in a direction along the substrate reference line at positions overlapping the pixels. Alignment The thin film is formed by allowing the vapor to reach the surface of the pixel where the opening is disposed at a facing position while maintaining the first state. After stopping the arrival, the vapor deposition mask is moved by the distance between the centers in the movement direction along the substrate reference line, and in the first state, the shielding part is disposed at the facing position. It is a thin film forming method in which the second state in which the opening is located in a pixel is formed, and the thin film is formed by allowing the vapor to reach the film formation target object while maintaining the second state.
This invention is a thin film formation method, Comprising: In the said 1st state, the said shielding part is faced at the tail of the said moving direction of the said pixel row | line | column which should form the said thin film along the said board | substrate reference line. When a pixel is arranged, the opening is arranged in the vapor deposition mask so as to face an out-of-region position along the substrate reference line behind the pixel by the center-to-center distance. In the second state, the pixel is configured to face the opening at the position outside the region.

  It becomes easy to manufacture a large-sized vapor deposition mask. Therefore, it becomes possible to form a large substrate by a vacuum vapor deposition method using a vapor deposition mask, and to improve the productivity of organic EL.

Plan view of the substrate that is the object to be deposited The top view of the 1st example of the pixel type vapor deposition mask of this invention (A) (b): The figure for demonstrating the case where the pixel of an odd-numbered row | line | column faces an opening part in an even number in a 1st state. (A) (b): The figure for demonstrating the case where the pixel of an odd-numbered row of odd numbers faces an opening part in a 1st state. (A) (b): The figure for demonstrating the case where the pixel of the odd-numbered row of even-numbered faces a shielding part in a 1st state. (A) (b): The figure for demonstrating the case where the pixel of an odd-numbered row of odd numbers faces a shielding part in a 1st state. The top view of the 2nd example of the pixel type vapor deposition mask of this invention Plan view of the stripe-type deposition mask of the present invention Internal configuration diagram of the vapor deposition apparatus of the present invention The figure for demonstrating the state which has arrange | positioned the board | substrate in a vacuum chamber The figure for demonstrating the state which lifted the board | substrate holding frame The figure for explaining adsorption of the substrate by the substrate adsorption device The figure for demonstrating the space | interval adjustment of a board | substrate and a vapor deposition mask Diagram for explaining vapor deposition mask exchange method Plan view of conventional pixel-type deposition mask Plan view of conventional striped evaporation mask The top view of the 3rd example of the pixel type vapor deposition mask of this invention The top view of the 2nd example of the substrate which is a vapor deposition object Plan view of vapor deposition mask used for film formation of substrate of second example

The structure of the vapor deposition mask according to the present invention is used to form an organic thin film of a light emitting layer of any one color (here, red) among R (red), G (green), and B (blue) on a substrate. The vapor deposition mask to be described will be described as an example.
FIG. 1 shows a plan view of a substrate 50 that is a deposition object.
The substrate 50 has a plurality of light emitting layer regions that are spaced apart from each other. The light emitting layer region includes a red light emitting layer region where a red light emitting layer is to be formed, a green light emitting layer region where a green light emitting layer is to be formed, and a blue light emitting layer region where a blue light emitting layer is to be formed. is there. In FIG. 1, red, green, and blue light emitting layer regions are denoted by reference numerals R, G, and B, respectively.

Hereinafter, the red light emitting layer region will be referred to as a pixel, and will be described with reference numeral 51. The pixels 51 are arranged so that their centers are parallel to each other and located on a plurality of equally spaced substrate reference lines 53a to 53c, and the distance between the centers is the distance between the centers of the pixels 51 on each of the substrate reference lines 53a to 53c. The distances are equal. Reference symbol d ₂ indicates the interval between the substrate reference lines 53a to 53c, and reference symbol d ₁ indicates the distance between the centers of the pixels 51 on the respective substrate reference lines 53a to 53c.
The pixels 51 on the substrate reference lines 53a to 53c have the same shape and the same size, and are oriented in the same direction.

FIG. 2 shows a plan view of a pixel-type deposition mask 10 according to the present invention.
The vapor deposition mask 10 has an opening 11 through which vapor passes and a shielding portion 19 that shields the vapor. When the shielding portion 19 is formed with the opening 11 aligned with some of the pixels 51, the vapor reaches the other portion of the pixel 51 where the same material (here, the material of the red light emitting layer) is to be formed. It is the part which is shielded not to.
Each opening 11 so as to be positioned on the plurality of mask reference line 13a~13c the same spacing as spacing d ₂ of the center substrate reference line 53a~53c parallel to each other are spaced apart from each other. The openings 11 are formed in the same shape, the same size, and the same orientation as the pixels 51, and the distance between the centers of the openings 11 on the mask reference lines 13a to 13c is between the centers of the pixels 51 on the substrate reference lines 53a to 53c. The distance d ₁ is doubled.

When the number of the pixels 51 on the substrate reference lines 53a to 53c is an even number (2m), at least m openings 11 are arranged on the mask reference lines 13a to 13c corresponding to the substrate reference lines. When the number of pixels 51 of the reference lines 53a to 53c is an odd number (2n−1), at least n openings 11 are arranged on the mask reference lines 13a to 13c corresponding to the substrate reference line. (Hereinafter, m and n are each a natural number of 1 or more).
A plurality of dot-shaped substrate marks 52 are formed in the non-film formation region outside the light emitting layer region of the substrate 50 (FIG. 1). First and second mask marks 12 ₁ and 12 ₂ are formed on the outer peripheral portion of the vapor deposition mask 10 (FIG. 2). The first and second mask marks 12 ₁ , 12 ₂ are two on a straight line that passes through the position facing each substrate mark 52 and is parallel to the mask reference lines 13a to 13c when aligned as will be described later. A set of point shapes are provided apart from each other by a distance d ₁ between the centers of the pixels 51. That is, the first and second mask marks 12 ₁ and 12 ₂ are arranged on the straight line parallel to the mask reference line and separated by the distance d ₁ .

Hereinafter, a starting point a set second mask mark 12 ₂ in, referred to the direction of the first end point of the mask mark 12 ₁ to the moving direction. Reference numeral 5 indicates a moving direction. The direction in which the moving direction 5 is directed is referred to as the front, and the opposite direction is referred to as the rear. Further, the positions of the pixels 51 on the substrate 50 are referred to as a vertical row as a column, a vertical direction as a column direction, a horizontal row as a row, and a horizontal direction as a row direction. Called columns ..., 1 row, 2 rows ... from the top.
When the first mask mark 12 ₁ corresponding respectively on each of the substrate marks 52 is arranged an evaporation mask 10 and the substrate 50 to be located (hereinafter referred to as a first state), the end of the mask reference line 13a~13c opening 11 of the (top row) is configured to overlap the pixel 51a ₁ ~51c ₁ located at the end of the substrate reference line 53a-53c (top row). That is, in the first state, the odd-numbered rows of the pixels 51 on the substrate reference lines 53 a to 53 c are positions that overlap with the openings 11.

In the first state, the distance between the centers of the openings 11 of the mask reference line 13a~13c is twice the center-to-center distance d ₁ of the pixel 51 of the substrate reference line 53a-53c, corresponding to each pixel 51 The openings 11 and the shields 19 are alternately arranged in the direction along the mask reference lines 13a to 13c at the positions where the masks are to be performed. That is, the odd-numbered pixels 51 on the substrate reference lines 53 a to 53 c overlap with the openings 11, and the even-numbered pixels 51 overlap with the shielding portion 19.
From the first state, the deposition mask 10 is moved relatively on the substrate 50 in the moving direction 5 by the distance d ₁ between the centers of the pixels 51, and the corresponding second mask mark 12 ₂ is positioned on each substrate mark 52. When this occurs (hereinafter referred to as the second state), each opening 11 moves forward (column direction) by the distance d ₁ between the centers of the pixels 51.
At this time, the openings 11 that overlap with the pixels 51 in the odd rows overlap with the pixels 51 in the even rows.
In the second state after the first state, all the pixels 51 on the substrate 50 face the opening 11 once.

In the vapor deposition mask 10 of the present invention, in the first state, the openings 11 of the mask reference lines 13a to 13c are pixels 51a _{1 to} 51c ₁ or one of the tails of the substrate reference lines 53a to 53c. As long as it is configured to overlap with any one of the front pixels 51a _{2 to} 51c ₂ , it is not limited to the above configuration, and as shown in FIG. 17, the openings 11 of some mask reference lines 13a to 13c The opening 11 of the other mask reference lines 13a to 13c may be configured to overlap with the pixel immediately ahead of the last pixel. However, in the other mask reference lines 13a to 13c, one or more openings 11 need to be arranged behind the opening 11 that overlaps with the pixel in front of the last one.

More specifically, FIG. 3A shows a case where an even number (2m) of pixels 51 are arranged on the substrate reference line 53a of the substrate 50. FIG. When the first mask mark 12 ₁ on the substrate marks 52 is disposed on the substrate 50 an evaporation mask 10 to be positioned, the opening 11 overlaps the pixel 51a located odd rows on a substrate reference line 53a It is configured as follows. At least m openings 11 are provided in the mask reference line 13a, and each of the m openings 11 faces the pixels 51a located on every other substrate reference line 53a (on odd rows).
From this state, when the deposition mask 10 is relatively moved in the movement direction 5 by the center distance d ₁ of the pixel 51 and the second mask mark 12 _{2 is made} to correspond to each substrate mark 52, each opening 11 becomes a pixel. It moves forward (column direction) by a distance d ₁ between the centers of 51. As shown in FIG. 3B, the openings 11 that face the odd-numbered pixels 51 before the movement face the even-numbered pixels 51 that face the shielding part 19 before the movement.

FIG. 4A shows a case where an odd number (2n−1) of pixels 51 are arranged on the substrate reference line 53 a of the substrate 50. When the first mask mark 12 ₁ on the substrate marks 52 is disposed on the substrate 50 an evaporation mask 10 to be positioned, the opening 11 overlaps the pixel 51a located odd rows on a substrate reference line 53a It is configured as follows. At least n openings 11 are provided in the mask reference line 13a, and each of the n openings 11 faces the pixels 51a (on odd rows) positioned every other on the substrate reference line 53a.
From this state, when the deposition mask 10 is relatively moved in the movement direction 5 by the distance d ₁ between the centers of the pixels 51 and the second mask mark 12 ₂ is positioned on each substrate mark 52, each opening 11 is formed. The pixel 51 moves forward (column direction) by a distance d ₁ between the centers. As shown in FIG. 4B, the openings 11 that face the odd-numbered pixels 51 before the movement face each pixel 51 (on the even-numbered lines) that face the shielding part 19 before the movement. . The opening 11 which has been opposed to the pixel 51a _x in the forefront before the move (bottom line) is facing the non-pixel is outside the pixel 51.

In addition, as shown in FIG. 5A, when the even number (2m) of pixels 51 are arranged on the substrate reference line 53a of the substrate 50, the first mask mark 12 ₁ is placed on each substrate mark 52. When the vapor deposition mask 10 is arranged so as to be positioned, the opening 11 is configured to overlap the pixel 51a ₂ positioned in front of the last one of the substrate reference line 53a. 53a an opening 11 is provided at least (m + 1) pieces to, m-number of openings 11 facing the pixel 51a located alternately on the substrate reference line 53a, the end of the pixel than the upper pixels 51a ₁ One opening 11 is arranged behind the center distance d _{1 of} 51.
From this state, when the deposition mask 10 is relatively moved by the distance d ₁ between the centers of the pixels 51 in the movement direction 5 on the substrate 50 and the second mask mark 12 ₂ is positioned on each substrate mark 52, opening 11 is moved forward by the center distance d ₁ between the pixels 51, as shown in FIG. 5 (b), disposed to the rear by center-to-center distance d ₁ of the last pixel 51a ₁ than the upper pixel 51 The opened opening 11 faces the last pixel 51a _1, and the opening 11 that faces the pixel 51 before the movement is each pixel 51 in front of the last pixel 51 that faces the shielding part 19 before the movement. Face to face.

In addition, as shown in FIG. 6A, in the case where an odd number (2n−1) of pixels 51 are arranged on the substrate reference line 53a of the substrate 50, the first mask mark is formed on each substrate mark 52. When the deposition mask 10 is arranged on the substrate 50 so that 12 ₁ is positioned, the opening 11 is configured to be positioned above the pixel 51a ₂ positioned in front of the last one of the substrate reference line 53a. The substrate reference line 53a is provided with at least n openings 11, and the n-1 openings 11 face every other pixel 51a positioned on the substrate reference line 53a. One opening portion 11 is arranged behind the uppermost pixel 51a _{1 by} a distance d ₁ between the centers of the pixels 51.
From this state, when the deposition mask 10 is relatively moved by the distance d ₁ between the centers of the pixels 51 in the movement direction 5 on the substrate 50 and the second mask mark 12 ₂ is positioned on each substrate mark 52, opening 11 is moved forward by the center distance d ₁ between the pixels 51, as shown in FIG. 6 (b), placed just behind the center-to-center distance d ₁ of the last pixel 51a ₁ than the upper pixel 51 The opened opening 11 faces the last pixel 51a _1, and the opening 11 that faces the pixel 51 before the movement is each pixel 51 in front of the last pixel 51 that faces the shielding part 19 before the movement. Face to face.

Here, as shown in FIG. 1, each light emitting layer region has a length of 110 μm in the direction in which only the light emitting layer regions of the same color among red, green, and blue are arranged, and the light emitting layer regions of three colors are red, green, and blue. The adjacent light-emitting layer regions are disposed on the substrate 50 at intervals of 10 μm.
Here, the interval (10 μm) between adjacent pixels (red light emitting layer regions) in the direction in which only the light emitting layer regions of the same color of red, green, and blue are arranged is the order of the three color light emitting layer regions in the order of red, green, and blue. It is shorter than the interval (170 μm) between adjacent pixels (red light emitting layer regions) in the aligned direction. A direction in which only the light emitting layer regions of the same color are arranged among red, green, and blue can be called a direction in which a film is formed of the same material and an interval between adjacent pixels is short.

When the substrate reference line of the substrate 50 is selected in the direction in which only the light emitting layer regions of the same color are arranged in red, green, and blue, the pixel-type deposition mask 10 has a mask reference line 13a as shown in FIG. Openings 11 adjacent along ˜13c are formed at intervals of 130 μm (first example).
When the substrate reference line of the substrate 50 is selected in the direction in which the light emitting layer regions of the three colors are arranged in the order of red, green, and blue, the pixel-type deposition mask 10 has a mask reference line 13a as shown in FIG. The openings 11 adjacent to each other along 13 f are formed at an interval of 410 μm (second example).
In both the first and second examples, the distance between the adjacent openings 11 is wider than that of the conventional pixel-type evaporation mask (see FIG. 15). In addition, the risk of damage to the vapor deposition mask 10 due to insufficient strength is reduced.

As in the vapor deposition mask 10 of the first example shown in FIG. 2, the openings 11 are formed in the same material and the distance between the centers of the openings 11 is separated in the direction in which the interval between adjacent pixels is short. Then, compared with the conventional vapor deposition mask (FIG. 15), since the thin part (band | belt-shaped part with a width | variety of 10 micrometers) of a mask is lose | eliminated, it is more preferable than the vapor deposition mask of FIG. Specifically, the interval between the pixel 51a ₁ and the pixel 51a ₂ is narrower than the interval between the pixel 51a ₁ and the pixel 51b ₁ . Therefore, the direction connecting the centers of the pixels 51a ₁ and the pixel 51a _2, the spacing of the apertures 11, the spacing of the openings 11 of the mask is wider than the conventional mask, the mask compared to conventional evaporation mask The thin part disappears.
The opening 11 on the vapor deposition mask 10 is not limited to the configuration arranged on any one of the plurality of mask reference lines 13a to 13f as shown in FIG. 7, but the same mask as shown in FIG. It may be arranged on the reference line 13.

FIG. 8 shows a plan view of the stripe-type deposition mask 10. Each opening 11 is formed in a strip shape whose length in the direction perpendicular to the mask reference line 13 is longer than the entire length of the pixel 51 in the direction in which only the light emitting layer regions of the same color among red, green and blue are arranged. 11 is set to be twice the distance between the centers of the pixels 51 of the same color in the direction in which the three-color light emitting layer regions are arranged in the order of red, green, and blue.
Therefore, in the vapor deposition mask 10 used for vapor deposition of the substrate 50 having the above-described size, the openings 11 adjacent to each other along the mask reference line 13 are formed at an interval of 410 μm. Since the distance between adjacent openings 11 is wider than that of a conventional stripe-type deposition mask (see FIG. 16), there is a risk that the deposition mask 10 may be damaged due to insufficient strength when the openings 11 are formed in the deposition mask 10. Reduce more.

The vapor deposition mask 10 of the present invention is not limited to the case where the pixels to be deposited are arranged on the substrate 50 as shown in FIG. 1, but are arranged in a staggered manner on the substrate 50 ′ as shown in FIG. Also available when
Deposition mask 10 in this case, as shown in FIG. 19, twice the center-to-center distance d ₁ of the center-to-center distance of the substrate reference line 53a~53c pixels 51 of the opening 11 of the mask reference line 13a~13c In the first state, the openings 11 of the mask reference lines 13a to 13c are the pixels 51a _{1 to} 51c ₁ or one of the tails of the substrate reference lines 53a to 53c located at the end (odd row). one forward may be composed so as to overlap with one of the pixels 51a ₂ ~51c ₂ (even rows).

Next, the structure of the vapor deposition apparatus which uses the above-mentioned vapor deposition mask 10 is demonstrated. FIG. 9 shows an internal configuration diagram of the vapor deposition apparatus 40.
The vapor deposition device 40 includes a vacuum chamber 41 and a vacuum exhaust device 49. The vacuum evacuation device 49 is disposed outside the vacuum chamber 41 and is configured so that the inside of the vacuum chamber 41 can be evacuated.
The vapor deposition apparatus 40 has a vapor deposition source 42.
The vapor deposition source 42 includes a supply source 42a and a discharge device 42b. Here, the supply source 42 a is disposed outside the vacuum chamber 41, and the discharge device 42 b is disposed in the vacuum chamber 41.
The supply source 42a and the discharge device 42b each have a box-shaped casing.
Inside the casing of the supply source 42a, a crucible in which a solid or liquid organic material is disposed and a heating means for heating the organic material are disposed. An organic material that is a film forming material is placed in a crucible and heated to generate vapor of the organic material.

The housing of the supply source 42a is connected to the housing of the discharge device 42b by piping, and the vapor of the organic material is supplied from the supply source 42a to the housing of the discharge device 42b.
A discharge port 42c is formed on one surface of the housing of the discharge device 42b.
The discharge port 42c of the discharge device 42b is directed vertically upward, and the vapor of the organic material is discharged from the discharge port 42c upward in the vacuum chamber 41.
Above the discharge port 42c, a "R" -shaped mask holding frame 43 is horizontally disposed so that the "R" -shaped opening portion faces the discharge port 42c. The size of the inner periphery of the mask holding frame 43 is formed smaller than the size of the outer periphery of the vapor deposition mask 10.
The vapor deposition mask 10 is placed on the mask holding frame 43 and supported horizontally at a position facing the discharge port 42c. Reference numeral 12 collectively indicates the first and second mask marks 12 ₁ and 12 ₂ in one set.

Next, a film forming method using the vapor deposition apparatus 40 will be described.
First, the inside of the vacuum chamber 41 is evacuated. Thereafter, evacuation is continued and the vacuum atmosphere of the vacuum chamber 41 is maintained.
A vapor of the organic material is generated in the supply source 42a of the vapor deposition source 42. However, the generation of steam is not yet started from the discharge port 42c.
In the vacuum chamber 41, a transport path is defined on a horizontal straight line passing through a position directly above the vapor deposition mask 10, and a roller-type transport mechanism 62 is provided along the transport path.
The transport mechanism 62 includes a plurality of pairs of cylindrical rollers 62a as two transport members. The rollers 62a are arranged in a line along the conveyance path for each set, and the two rollers 62a in the set are arranged on the opposite sides of the conveyance path so that one end of each cylindrical shape faces each other. Has been.
A motor 62b is fixed to the other end of the roller 62a. The motor 62b is configured to rotate the roller 62a around a cylindrical central axis when receiving a control signal from a control device (not shown).

The substrate 50 is placed on a “B” -shaped substrate holding frame 61 (not shown in FIG. 9) and is transported on the transport mechanism 62.
The inner periphery of the “B” shape of the substrate holding frame 61 is larger than the entire pixel 51 on the surface (film formation surface) of the substrate 50 and smaller than the outer periphery of the substrate 50. The width of the substrate holding frame 61 is formed wider than the interval between the rollers 62 a facing each other of the transport mechanism 62.
First, the substrate 50 is placed on the substrate holding frame 61 with the film formation surface facing downward outside the vacuum chamber 41. At this time, the entire pixel 51 is exposed downward from the “R” -shaped opening, and the substrate 50 itself does not fall from the “R” -shaped opening.

As shown in FIG. 10, while maintaining the vacuum atmosphere in the vacuum chamber 41, a substrate holding frame 61 is loaded into the vacuum chamber 41 using a loading device (not shown) and is horizontally placed on the roller 62 a of the transport mechanism 62. Put it on.
The substrate holding frame 61 is moved by rotating the roller 62 a, and the substrate holding frame 61 is stopped at a position where the film formation surface of the substrate 50 faces the vapor deposition mask 10 on the mask holding frame 43.
A substrate holding frame lifting / lowering device 45 is disposed on the side of the mask holding frame 43.
The substrate holding frame elevating device 45 has a contact part 45a and a contact part elevating mechanism 45b.
The contact portion 45 a is disposed at a position facing the surface facing the lower side of the substrate holding frame 61.
The contact part raising / lowering mechanism 45b is configured to move the contact part 45a in the vertical direction when receiving a control signal from a control device (not shown).

As shown in FIG. 11, the contact portion 45a is moved vertically upward toward the substrate holding frame 61, is brought into contact with the substrate holding frame 61, the substrate holding frame 61 is lifted through the contact portion 45a, and the substrate holding frame 61 is moved. It stops at a position spaced apart from the roller 62a.
By separating the substrate holding frame 61 from the roller 62 a, it is possible to prevent the vibration of the transport mechanism 62 from being transmitted to the substrate holding frame 61.
A substrate suction device 64 is disposed at a position facing the back surface (upper side) of the substrate 50. The substrate suction device 64 has a substrate suction plate 64a and an adhesive member 64b.
One surface (hereinafter referred to as the surface) of the substrate suction plate 64a is formed in a flat shape, and a through hole is formed. The shape of the through hole is not limited to the hole shape surrounded by the periphery, and may be a notch shape having an opening in a part of the periphery. A rod-like plate hanging rod 64d is fixed vertically on the back surface of the substrate suction plate 64a.

The adhesive member 64b has a plate part and a convex part. The convex part is formed longer than the thickness of the substrate suction plate 64a and smaller in diameter than the through hole. When one surface (hereinafter referred to as the front surface) of the plate portion is brought close to the back surface of the substrate suction plate 64a, the convex portion protrudes from the through hole. In the plate portion, an opening larger than the diameter of the plate hanging rod 64d is formed at a position facing the end of the plate hanging rod 64d. A tubular member suspension pipe 64e is vertically fixed so as to communicate with the opening on the back surface of the plate portion.
The diameter of the member suspension pipe 64e is formed larger than the diameter of the plate suspension bar 64d. One end of the plate suspension rod 64d is inserted into the member suspension tube 64e, and the center axis of the plate suspension rod 64d and the center axis of the member suspension tube 64e are parallel to each other.

When the substrate suction device 64 moves the substrate suction plate 64a and the adhesive member 64b relatively close to each other while maintaining the state where one end of the plate suspension bar 64d is inserted into the member suspension pipe 64e, the adhesive member The tip of the convex part of 64b is comprised so that it may protrude in the surface of the board | substrate adsorption | suction board 64a through a through-hole from the back surface of the board | substrate adsorption | suction board 64a.
The substrate suction device 64 is arranged in the vacuum chamber 41 so that the center axis of the plate suspension bar 64d and the member suspension tube 64e is perpendicular to the horizontal plane, and the surface of the substrate suction plate 64a faces the back surface of the substrate 50. Has been.
One end of the plate suspension bar 64d and one end of the member suspension pipe 64e are hermetically penetrated through the inner wall of the vacuum chamber 41, and are connected to a suction device moving mechanism 64c disposed outside the vacuum chamber 41.
When the suction device moving mechanism 64c receives a control signal from a control device (not shown), the suction device moving mechanism 64c is configured to move up and down the plate suspension rod 64d and the member suspension tube 64e in directions parallel to the respective central axes.

The substrate suction plate 64a contains any one of polyimide, ceramic, SiC, and BN, and an electrode is provided inside to constitute an electrostatic suction mechanism. A power supply device (not shown) disposed outside the vacuum chamber 41 is electrically connected to the electrodes. The substrate suction plate 64a is configured to generate an attractive force due to an electrostatic force between the suction target and a target object when a predetermined DC voltage is applied to an internal electrode from a power supply device.
An adhesive layer is fixed to the tip of the convex portion of the adhesive member 64b.
The substrate 50 on the substrate holding frame 61 is supported in contact with the substrate holding frame 61 at the edge thereof, but the film formation surface faces the opening of the substrate holding frame 61 and thus swells downward due to gravity. May be deformed. Before the film forming process described later, it is necessary to eliminate the deformation of the film forming surface of the substrate 50 and make it flat.

First, the substrate suction plate 64a is lowered and stopped at a position where the front surface of the substrate suction plate 64a comes into contact with the back surface of the substrate 50 or at a position separated by a very small gap.
The adhesive member 64b is lowered, the adhesive layer at the tip of the convex portion is brought into contact with the back surface of the substrate 50, and pressed to adhere the back surface of the substrate 50 to the tip of the convex portion of the adhesive member 64b via the adhesive layer.

As shown in FIG. 12, the adhesive member 64b is raised and the back surface of the substrate 50 bonded to the tip of the convex portion is brought into contact with the surface of the substrate suction plate 64a while the tip of the convex portion enters the through hole. A predetermined DC voltage is applied to the electrode inside the substrate suction plate 64 a to generate an electrostatic attractive force with the substrate 50. The back surface of the substrate 50 is electrostatically attracted to the surface of the substrate attracting plate 64a.
By electrostatically adsorbing the back surface of the substrate 50 to the surface of the substrate adsorption plate 64a, the substrate 50 can be maintained in a flat state thereafter.
The adhesive member 64 b is raised, the adhesion of the adhesive layer to the back surface of the substrate 50 is canceled, and the adhesive layer at the tip of the convex portion is separated from the back surface of the substrate 50.
A mask holding frame moving device 44 is connected to the mask holding frame 43.
Here, the mask holding frame moving device 44 includes a mask holding frame moving / rotating device 44a and a mask holding frame lifting / lowering device 44b. The mask holding frame moving / rotating device 44a is connected to the mask holding frame 43, and the mask holding frame lifting / lowering device 44b is connected to the mask holding frame moving / rotating device 44a.

When receiving a control signal from the mask holding frame movement control device 69 arranged outside the vacuum chamber 41, the mask holding frame moving / rotating device 44a moves the mask holding frame 43 in two horizontal directions (XY directions) orthogonal to each other. And rotating around a rotation axis perpendicular to the horizontal plane (in the Θ direction).
The mask holding frame lifting / lowering device 44b is configured to raise or lower the mask holding frame 43 together with the mask holding frame moving / rotating device 44a when receiving a control signal from the mask holding frame movement control device 69.
The mask holding frame movement control device 69 is connected to a detection device that detects the relative positional relationship between the vapor deposition mask 10 on the mask holding frame 43 and the substrate 50.
Here, the detection device is the imaging device 63, and is arranged at a position directly above the substrate mark 52 on the substrate 50 with the lens facing vertically downward. The imaging device 63 is configured to be able to image both the substrate mark 52 and the mask mark 12 on the vapor deposition mask 10 through the transparent substrate 50.

The mask holding frame movement control device 69 measures the relative positional relationship between the projection mask mark obtained by orthogonally projecting the mask mark 12 on the horizontal plane and the projected substrate mark obtained by orthogonally projecting the substrate mark 52 on the horizontal plane from the imaging result of the imaging device 62. The direction and amount of movement of the mask holding frame 43 by the mask holding frame moving and rotating device 44a, and the direction of rotation and the amount of rotation of the mask holding frame 43 so that the projection mask mark and the projection substrate mark coincide with each other. Is configured to determine.
The mask holding frame movement control device 69 knows the height of the surface of the vapor deposition mask 10 and the height of the surface of the substrate 50 in advance, and the distance between the surface of the vapor deposition mask 10 and the surface of the substrate 50 is a predetermined distance (zero may be used). ) To determine the direction and amount of movement of the mask holding frame 43 by the mask holding frame lifting / lowering device 44b.
An apparatus for aligning the vapor deposition mask 10 on the mask holding frame 43 and the substrate 50 is called an alignment apparatus. Here, the alignment is performed by the mask holding frame movement 44, the detection apparatus, and the mask holding frame movement control apparatus 69. The device is configured.

As shown in FIG. 13, first, the mask holding frame 43 is raised so that the distance between the surface of the vapor deposition mask 10 and the surface of the substrate 50 becomes a predetermined distance. The distance between the surface of the vapor deposition mask 10 and the surface of the substrate 50 is preferably 50 μm to 0 μm (adhesion) because a thin film with a blurred outline is formed on the surface of the substrate 50 if the distance is too large.
Then, the above-mentioned first mask mark 12 ₁ each captured here the substrate mark 52 in the image pickup apparatus 63, a mask holding frame 43 as projection substrate mark coincides with the projection mask mark based on the imaging result horizontal It is moved in the direction and rotated around a rotation axis perpendicular to the horizontal plane, so that the first state described above is obtained. At this time, for example, referring to FIG. 3A, the openings 11 and the shields 19 are alternately arranged in positions along the substrate reference lines 53 a to 53 c at positions facing the pixels 51.

Next, when the vapor of the film forming material is discharged from the discharge port 42 c while maintaining the first state with both the substrate 50 and the vapor deposition mask 10 being stationary, the vapor is exposed to each opening 11 of the vapor deposition mask 10. Then, each pixel reaches the pixel 51 facing the opening 11, and a thin film of a film forming material is formed on the pixel 51.
After forming the film on the substrate 50 for a predetermined time, the release of the vapor from the discharge port 42c is stopped.
Next, the vapor deposition mask 10 is moved together with the mask holding frame 43 by the distance d ₁ between the centers of the pixels 51 in the moving direction 5 described above.

Each imaged and substrate mark 52 above the second mask mark 12 ₂ at the imaging device 63, to move the mask holding frame 43 in the horizontal direction as the projection substrate mark coincides with the projection mask mark based on the imaging result And it is rotated and rotated around a rotation axis perpendicular to the horizontal plane to obtain the second state described above. At this time, for example, referring to FIG. 3B, the opening 11 is arranged at a position facing each non-deposited pixel 51 facing the shielding part 19 in the first state, and the opening in the first state. The shielding part 19 is disposed at a position facing each pixel 51 that has already been deposited and faces the 11.
Next, when the vapor of the film forming material is discharged from the discharge port 42c while maintaining the second state in a state where both the substrate 50 and the vapor deposition mask 10 are stationary, the vapor is exposed to each opening 11 of the vapor deposition mask 10. The thin film of the film forming material is formed on each of the pixels 51 through the respective pixels 51 of the substrate 50 that have not been formed yet.

In this way, a thin film can be formed on all pixels 51 of the same color on the substrate 50 using the vapor deposition mask 10 of the present invention.
After forming the film on the substrate 50 for a predetermined time, the release of the vapor from the discharge port 42c is stopped.
The mask holding frame 43 is lowered and the surface of the vapor deposition mask 10 is separated from the surface of the substrate 50.
The application of DC power to the electrodes inside the substrate suction plate 64 a is stopped to release the electrostatic suction of the substrate 50, and the substrate 50 is placed on the substrate holding frame 61. Both the substrate suction plate 64a and the adhesive member 64b are lifted from the substrate 50 and are stopped at the original positions.
The contact portion 45a of the substrate holding frame lifting device 45 is lowered together with the substrate holding frame 61, and the substrate holding frame 61 is placed on the roller 62a. The contact portion 45 a is further lowered and separated from the substrate holding frame 61.
The roller 62 a is rotated, and the substrate holding frame 61 is moved from the position facing the vapor deposition mask 10 while leaving the vapor deposition mask 10 in the vacuum chamber 41. The substrate holding frame 61 is carried out to the outside of the vacuum chamber 41 using a carry-out device (not shown) while maintaining the vacuum atmosphere in the vacuum vessel 41.

A method for exchanging the evaporation mask after forming a predetermined number of substrates 50 will be described.
Referring to FIG. 9, mask replacement means 65 is arranged above mask holding frame 43. The mask exchanging means 65 has a rod-shaped arm portion 65a, an arm portion hanging rod 65b, and an arm portion moving mechanism 65c.
The arm suspension rod 65b is disposed outside the position facing the surface of the vapor deposition mask 10 with the central axis oriented perpendicular to the horizontal plane.
One end of the arm suspension rod 65b is fixed to one end of the arm portion 65a in such a direction that the central axes intersect at right angles, and the other end of the arm suspension rod 65b penetrates the inner wall of the vacuum chamber 41 in an airtight manner, The arm moving mechanism 65c disposed outside the vacuum chamber 41 is connected.
When receiving a control signal from a control device (not shown), the arm moving mechanism 65c rotates the arm 65a around the central axis of the arm hanging rod 65b via the arm hanging rod 65b, and It is configured to raise or lower 65a.
After rotating the arm suspension rod 65b so that the arm portion 65a does not face the surface of the vapor deposition mask 10, the arm portion 65a is lowered and positioned on the side of the vapor deposition mask 10. Next, the arm suspension rod 65 b is rotated to insert the arm portion 65 a between the back surface of the vapor deposition mask 10 and the mask holding frame 43. The arm portion 65 a is raised, and the vapor deposition mask 10 is separated from the mask holding frame 43. The vapor deposition mask 10 is kept stationary above the conveyance path.

As shown in FIG. 14, while maintaining the vacuum atmosphere in the vacuum chamber 41, a mask transport plate 67 on which the vapor deposition mask 10 can be placed is carried into the vacuum chamber 41 using a loading device (not shown), and the rollers Place on 62a. The mask 62 is moved by rotating the roller 62a, and is stopped at a position directly below the vapor deposition mask 10.
The arm portion 65 a is lowered and the deposition mask 10 is placed on the mask transport plate 67. The arm suspension rod 65b is rotated to extract the arm portion 65a from between the back surface of the vapor deposition mask 10 and the mask transport plate 67, and then lifted and stopped at the original position.
The mask transport plate 67 is moved by rotating the roller 62a, and the mask transport plate 67 is transported to the outside of the vacuum chamber 41 using a transport device (not shown) while maintaining the vacuum atmosphere in the vacuum chamber 41.

Next, while maintaining the vacuum atmosphere in the vacuum chamber 41, using a loading device (not shown), the mask transport plate 67 on which the unused vapor deposition mask 10 is placed is transported into the vacuum chamber 41, and the rollers 62a. Put it on. The mask 62 is moved by rotating the roller 62a, and is stopped at a position facing the mask holding frame 43.
The arm portion 65 a is lowered and is positioned on the side of the vapor deposition mask 10. Next, the arm suspension rod 65 b is rotated to insert the arm portion 65 a between the back surface of the vapor deposition mask 10 and the mask transport plate 67. The arm portion 65 a is raised, the vapor deposition mask 10 is separated from the mask transport plate 67, and is made still above the mask transport plate 67.
The empty mask transport plate 67 is moved by rotating the roller 62 a, and the empty mask transport plate 67 is moved outside the vacuum chamber 41 using an unillustrated unloading device while maintaining the vacuum atmosphere in the vacuum chamber 41. Take it out.
The arm portion 65 a is lowered and the vapor deposition mask 10 is placed on the mask holding frame 43. The arm suspension rod 65b is rotated to extract the arm portion 65a from between the back surface of the vapor deposition mask 10 and the mask holding frame 43, and then lifted and stopped at the original position.
In this way, the unused vapor deposition mask 10 can be placed on the mask holding frame 43 as shown in FIG.

As described above, the structure of the substrate mark 52 and the mask mark 12 of the present invention is a pair of first and second mask marks 12 ₁ , 12 at positions facing the substrate mark 52 on the vapor deposition mask 10. ₂ is not limited to the case where the _two are separated from each other by the distance d ₁ between the centers of the pixels 51, and two sets of substrate marks are formed on the substrate 50 at positions facing the mask marks 12 on the substrate reference line 53a. it may be provided apart from each other by a center distance d ₁ between the pixel 51 along the - 53c.

The distance between the centers of the openings 11 of the deposition mask 10 of the present invention, as described above, is not limited if it is two times the center-to-center distance d ₁ of the pixel 51, the center distance d ₁ of the pixel 51 You may be 3 times or more. That is, the distance between the centers of the openings adjacent in one direction of the vapor deposition mask may be a multiple of the distance between the centers of the pixels formed in the same material and adjacent in the one direction. The vapor deposition mask has a plurality of mask marks arranged at the same center distance as the center distance between pixels adjacent in the one direction. When the number is multiple, the number of relative movements of the substrate and the vapor deposition mask is (multiple times −1).
When the deposition mask 10 is disposed on the substrate 50, one opening 11 and two or more continuous shielding portions 19 are alternately disposed in a direction along the substrate reference line at a position facing the pixel 51. In this state, when the relative movement of the substrate 50 and the vapor deposition mask 10 in the movement direction 5 by the center distance d ₁ of the pixel 51 is repeated twice or more, the pixel 50 is once above the pixel 51. The openings 11 can be arranged one by one.
In this case, since the interval between the adjacent openings 11 is wider than the evaporation mask in which the distance between the centers of the openings 11 as described above is twice the distance between the centers of the pixels 51, the openings 11 are formed in the evaporation mask 10. The risk of damage to the vapor deposition mask 10 due to insufficient strength when forming the film can be further reduced.

The transport mechanism 62 of the vapor deposition apparatus 40 of the present invention is not limited to the roller system as described above, and may be a belt conveyor system, a linear motor system, a robot arm system, or the like as long as an object can be transported horizontally in the vacuum chamber 41. .
As described above, the vapor deposition apparatus 40 of the present invention is not limited to the structure in which the discharge port 42c is directed vertically upward and the mask 10 and the substrate 50 are sequentially disposed horizontally above the discharge port 42c. The mask 10 and the substrate 50 may be arranged horizontally in order below the discharge port 42c in the downward direction, or one surface perpendicular to the horizontal plane may be used as a reference plane, with the discharge port 42c serving as a reference. You may comprise so that the mask 10 and the board | substrate 50 may be arrange | positioned in the state which stood in parallel with the reference plane in order at the position which faces the discharge port 42c toward the surface.

DESCRIPTION OF SYMBOLS 10 ... Deposition mask 11 ... Opening part 12 ... Mask mark 19 ... Shielding part 40 ... Deposition apparatus 41 ... Vacuum chamber 42 ... Deposition source 49 ... Vacuum exhaust apparatus 50 ... Substrate 51 ... Pixel 52 …… Substrate mark 53a to 53c …… Substrate reference line

Claims (10)

A vapor deposition mask configured to allow vapor to reach a plurality of pixels on which the same material is deposited on a substrate;
Some of the pixels have openings through which the vapor passes;
The vapor deposition mask, wherein a distance between centers of the openings adjacent in one direction of the vapor deposition mask is a multiple of a distance between centers of the pixels formed in the same material and adjacent in the one direction.   The vapor deposition mask according to claim 1, wherein the one direction is a direction in which a film is formed of the same material and a distance between adjacent pixels is short.   The vapor deposition mask according to claim 1, further comprising a plurality of mask marks arranged at the same center distance as the center distance between the pixels adjacent in the one direction. The vapor deposition mask according to claim 1 or 2,
A vacuum chamber in which the vapor deposition mask is disposed;
An evacuation device for evacuating the vacuum chamber;
A vapor deposition source for releasing vapor of the vapor deposition material into the vacuum chamber;
An alignment device for aligning the vapor deposition mask and the substrate;
A vapor deposition apparatus. The alignment device includes:
A mask mark of the vapor deposition mask, and a detection device for detecting the substrate mark of the substrate;
A mask moving device for moving the vapor deposition mask in a direction parallel to the surface of the vapor deposition mask and rotating around a rotation axis perpendicular to the surface of the vapor deposition mask;
The control device that determines the direction and amount of movement of the vapor deposition mask by the mask moving device, and the direction and amount of rotation of the vapor deposition mask based on the detection result of the detection device. 4. The vapor deposition apparatus according to 4. A vapor deposition mask according to claim 3;
A vacuum chamber in which the vapor deposition mask is disposed;
An evacuation device for evacuating the vacuum chamber;
A vapor deposition source for releasing vapor of the vapor deposition material into the vacuum chamber;
An alignment device for aligning the vapor deposition mask and the substrate;
A vapor deposition apparatus. The alignment device includes:
A detection device for detecting the mask mark of the vapor deposition mask and the substrate mark of the substrate;
A mask moving device for moving the vapor deposition mask in a direction parallel to the surface of the vapor deposition mask and rotating around a rotation axis perpendicular to the surface of the vapor deposition mask;
The control device that determines the direction and amount of movement of the vapor deposition mask by the mask moving device, and the direction and amount of rotation of the vapor deposition mask based on the detection result of the detection device. 6. The vapor deposition apparatus according to 6. A thin film forming method in which a substrate having a plurality of pixels formed of the same material, a deposition source, and a deposition mask having a plurality of openings are disposed in a vacuum chamber that has been evacuated, and a film is formed on the substrate. There,
The pixels are arranged in a matrix,
The deposition mask has openings, and the center distance between the rows of the openings is a multiple of the center distance between the rows of the pixels,
Depositing the openings over the pixels on odd rows;
Relatively moving either the deposition mask or the substrate in the column direction by a multiple of the center distance of the pixels;
Depositing the openings on the pixels on even rows to form a film. In a vacuum chamber evacuated, a substrate having a plurality of pixels positioned apart from each other is disposed,
Vapor of vapor deposition material is released from the vapor deposition source into the vacuum chamber,
A thin film forming method for forming a thin film on the pixel on which a thin film is to be formed,
The center of each pixel is disposed on any one of a plurality of substrate reference lines parallel to each other, and the distance between the centers of the pixels on the substrate reference line is made equal.
4. The distance between the centers of the openings adjacent in one direction is twice the distance between the centers of the pixels formed in the same material and adjacent in the one direction. The vapor deposition mask according to claim is opposed to the substrate, and the substrate and the shielding portion for shielding the vapor are alternately arranged in a direction along the substrate reference line at a position overlapping each pixel. And in the first state where the vapor deposition mask is aligned and arranged,
While maintaining the first state, forming the thin film by allowing the vapor to reach the pixel surface where the opening is disposed at the facing position,
After stopping the arrival of the steam,
The deposition mask is moved in the movement direction along the substrate reference line by the distance between the centers, and in the first state, the opening is located at the pixel where the shielding portion is disposed at the facing position. To the second state,
A thin film forming method for forming the thin film by causing the vapor to reach the film formation target while maintaining the second state. In the first state, when the pixel facing the shielding portion is arranged at the end of the moving direction of the column of pixels on which the thin film is to be formed along the substrate reference line, The opening is disposed in the vapor deposition mask so as to face an out-of-region position along the substrate reference line behind the pixel by the center-to-center distance,
The thin film forming method according to claim 9, wherein the rearmost pixel faces the opening at the out-of-region position in the second state.

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