JP2011109133A - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- JP2011109133A JP2011109133A JP2011031698A JP2011031698A JP2011109133A JP 2011109133 A JP2011109133 A JP 2011109133A JP 2011031698 A JP2011031698 A JP 2011031698A JP 2011031698 A JP2011031698 A JP 2011031698A JP 2011109133 A JP2011109133 A JP 2011109133A
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Abstract
【解決手段】本発明のエリアセンサは、発光素子を用いてセンサ部に画像を表示する機能と、光電変換素子を用いた読み取り機能を有する。そのため、新たに電子ディスプレイをエリアセンサに設けなくとも、センサ部で読み込んだ画像をセンサ部に表示させることが可能である。また、本発明のフォトダイオードの光電変換層は、非晶質珪素膜で形成されており、N型半導体層及びP型半導体層は多結晶珪素膜で形成されている。このとき、非晶質珪素膜は、多結晶珪素膜よりも厚く形成され、その結果、本発明のフォトダイオードは、より多くの光を受け取ることが出来る。
【選択図】 図1
Description
間に有機化合物層が挟まれた構造とする。有機化合物層は、公知の発光材料を用いて作製することが出来る。また、有機化合物層には、単層構造と積層構造の二つの構造があるが、本発明はどちらの構造を用いてもよい。なお、有機化合物層におけるルミネッセンスには、一重項励起状態から基底状態に戻る際の発光(蛍光)と、三重項励起状態から基底状態に戻る際の発光(リン光)とがあるが、本発明はどちらの発光を用いてもよい。
本発明のフォトダイオードは、光電変換層は非晶質シリコン膜(アモルファスシリコン膜)で形成し、N型半導体層はN型の多結晶シリコン膜(ポリシリコン膜)、P型半導体層はP型の多結晶シリコン膜(ポリシリコン膜)で形成する。このとき、非晶質シリコン膜は、多結晶シリコン膜よりも厚く、厚さの比は、好ましくは(1〜10):1である。本発明で用いるフォトダイオードは、非晶質シリコン膜の厚さが多結晶シリコン膜よりも厚いことによって、光電変換層には、より多くの光を受け取ることができる。
またリセット用TFT110のドレイン領域はフォトダイオード113及びバッファ用TFT111のゲート電極に接続されている。
ただし、リセット用TFT110とバッファ用TFT111の極性は逆の方が好ましい。
120cの全ステージのラッチに書き込まれ、保持される。
である。画素電極(陽極)264と、EL層266と、対向電極(陰極)267とでEL素子269が形成される。なお268はバンクであり、隣り合う画素同士のEL層266を区切っている。
である。画素電極(陰極)767と、EL層766と、対向電極(陽極)764とでEL素子769が形成される。なお768はバンクであり、隣り合う画素同士のEL層766を区切っている。
CMP法は公知の方法で行うことが可能である。酸化膜の研磨では、一般的に100〜1000nmφの研磨剤を、PH調整剤等の試薬を含む水溶液に分散させた固液分散系のスラリーが用いられる。本実施例では、水酸化カリウムが添加された水溶液に、塩化珪素ガスを熱分解して得られるフュームドシリカ粒子を20wt%分散したシリカスラリー(PH=10〜11)を用いる。
W膜は結晶粒を大きくすることで低抵抗率化を図ることができるが、W膜中に酸素などの不純物元素が多い場合には結晶化が阻害され高抵抗化する。従って、本実施例では、高純度のW(純度99.9999%)のターゲットを用いたスパッタ法で、さらに成膜時に気相中からの不純物の混入がないように十分配慮してW膜を形成することにより、抵抗率9〜20μΩcmを実現することができた。
。第1のエッチング処理では第1及び第2のエッチング条件で行う。本実施例では第1のエッチング条件として、ICP(Inductively Coupled Plasma:誘導結合型プラズマ)エッチング法を用い、エッチング用ガスにCF4とCl2とO2とを用い、それぞれのガス流量比を25/25/10(sccm)とし、1Paの圧力でコイル型の電極に500WのRF(13.56MHz)電力を投入してプラズマを生成してエッチングを行った。基板側(試料ステージ)にも150WのRF(13.56MHz)電力を投入し、実質的に負の自己バイアス電圧を印加する。この第1のエッチング条件によりW膜をエッチングして第1の導電層の端部をテーパー形状とする。第1のエッチング条件でのWに対するエッチング速度は200.39nm/min、TaNに対するエッチング速度は80.32nm/minであり、TaNに対するWの選択比は約2.5である。また、この第1のエッチング条件によって、Wのテーパー角は、約26°となる。
第1の導電層220b、222bを不純物元素に対するマスクとして用い、P型を付与する不純物元素を添加して自己整合的に不純物領域を形成する。なお、不純物領域242上に導電層は存在しないため、ゲート絶縁膜223上からドーピングする。本実施例では、不純物領域240a〜240c、241a〜241cおよび242はジボラン(B2H6)を用いたイオンドープ法で形成する。なお、この第3のドーピング処理の際には、Nチャネル型TFTを形成する半導体層はレジストからなるマスク239で覆われている。第1のドーピング処理及び第2のドーピング処理によって、不純物領域240a、240b、240cにはそれぞれ異なる濃度でリンが添加されているが、そのいずれの領域においてもP型を付与する不純物元素の濃度が2×1020〜2×1021atoms/cm3となるようにドーピング処理することにより、Pチャネル型TFTのソース領域およびドレイン領域として機能するために何ら問題は生じない。
熱アニール法としては、酸素濃度が1ppm以下、好ましくは0.1ppm以下の窒素雰囲気中で400〜700℃、代表的には500〜550℃で行えばよく、本実施例では550℃、4時間の熱処理で活性化処理を行った。なお、熱アニール法の他に、レーザーアニール法、またはラピッドサーマルアニール法(RTA法)などを適用することができる。
本実施例では、赤色に発光する発光層としてシアノポリフェニレンビニレン、緑色に発光する発光層としてポリフェニレンビニレン、青色に発光する発光層としてポリアルキルフェニレンを各々50nmの厚さに形成する。また、溶媒としては1,2−ジクロロメタンを用い、80〜150℃のホットプレートで1〜5分の熱処理を行って揮発させる。
フィルム、マイラーフィルム、ポリエステルフィルムまたはアクリル樹脂フィルムを用いることができる。また、アルミニウムホイルをPVFフィルムやマイラーフィルムで挟んだ構造のシートを用いることもできる。
EL駆動用TFT3105はpチャネル型TFTとnチャネル型TFTのどちらでも良い。
あるいはエキシマレーザー(波長308nm)を用い、線状ビームを形成し、石英基板を通過させれば良い。なお、エキシマレーザーはガラス基板を通過しない。したがって、素子形成基板3101としてガラス基板を用いるのであれば、YAGレーザーの基本波、第2高調波、第3高調波を用い、好ましくは第2高調波(波長532nm)を用いて線状ビームを形成し、ガラス基板を通過させれば良い。
基板3201上にスイッチング用TFT3205と、EL駆動用TFT3204と、フォトダイオード3206が形成されている。3203はEL素子であり、EL駆動用TFT3204によってEL素子3203に流れる電流が制御される。
とに接続して設けられている。
よって本実施例のエリアセンサの場合、各画素の有するEL素子1006の発光する期間は、サンプリング期間(ST1〜STN)と同じ長さである。上記構成によって、本実施例のエリアセンサは配線の数を図1の場合に比べて少なくすることができる。
102 画素
103 定電流電源
104 スイッチング用TFT
105 EL駆動用TFT
106 EL素子
107 コンデンサ
110 リセット用TFT
111 バッファ用TFT
112 選択用TFT
113 フォトダイオード
Claims (3)
- 第1の半導体層を有するNチャネル型トランジスタと、
第2の半導体層を有するPチャネル型トランジスタと、
第3の半導体層と第4の半導体層と第5の半導体層とを有する光電変換素子と、を有する半導体装置の作製方法であって、
絶縁表面上に、前記第1乃至第4の半導体層を形成する工程と、
前記第1乃至第4の半導体層上に、絶縁膜を形成する工程と、
前記絶縁膜上の前記第1半導体層と重なる位置に第1のゲート電極を形成し、且つ、前記絶縁膜上の前記第2半導体層と重なる位置に第2のゲート電極を形成する工程と、
前記第1の半導体層のソース領域及びドレイン領域となる領域と、前記第3の半導体層と、にN型を付与する不純物元素に添加する工程と、
前記第2の半導体層のソース領域及びドレイン領域となる領域と、前記第4の半導体層と、にP型を付与する不純物元素に添加する工程と、
前記第3の半導体層の一部及び第4の半導体層の一部が露出するように、前記絶縁膜に開口部を形成する工程と、
前記絶縁膜上に、前記開口部を介して前記第3の半導体層の一部及び第4の半導体層の一部に接する第5の半導体層を形成する工程と、を有することを特徴とする半導体装置の作製方法。 - Nチャネル型トランジスタと、Pチャネル型トランジスタと、P型半導体層とN型半導体層と光電変換層とを有する光電変換素子と、が同一の絶縁表面上に接して設けられていることを特徴とする半導体装置。
- 請求項2又は請求項2において、
前記Nチャネル型トランジスタのソース領域及びドレイン領域と、前記N型半導体層と、は同時に形成されたものであり、
前記Pチャネル型トランジスタのソース領域及びドレイン領域と、前記P型半導体層と、は同時に形成されたものであることを特徴とする半導体装置。
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US20100193788A1 (en) | 2010-08-05 |
JP5171975B2 (ja) | 2013-03-27 |
US20130146881A1 (en) | 2013-06-13 |
US20020044208A1 (en) | 2002-04-18 |
US20150380472A1 (en) | 2015-12-31 |
US9337243B2 (en) | 2016-05-10 |
US20160247871A1 (en) | 2016-08-25 |
US20170309695A1 (en) | 2017-10-26 |
US20060163577A1 (en) | 2006-07-27 |
US8058699B2 (en) | 2011-11-15 |
US20120007090A1 (en) | 2012-01-12 |
US9711582B2 (en) | 2017-07-18 |
US7030551B2 (en) | 2006-04-18 |
US9082677B2 (en) | 2015-07-14 |
US9941343B2 (en) | 2018-04-10 |
US8378443B2 (en) | 2013-02-19 |
US7786544B2 (en) | 2010-08-31 |
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