JP2011066054A - Charged particle beam drawing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a drawing apparatus that allows execution of beam drift correction not only to disturbance elements such as an air temperature and a temperature but also to elements that do not allow an operator to previously, accurately and easily know time to make the correction thereto. <P>SOLUTION: The drawing apparatus 100 is equipped with: a drawing part 150 that draws a pattern at a desired position on a sample by deflecting an electron beam while using the electron beam; a beam drifting amount measuring part 56 that measures an amount of beam drift of the electron beam on the basis of state information indicating contents of a state generated due to a change from an another state inside the apparatus; and a deflection amount calculation part 78 that calculates an amount of deflection for deflecting the electron beam corrected by using the measured amount of beam drift of the charged particle beam. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a charged particle beam drawing apparatus, and for example, relates to a technique for correcting beam drift of an electron beam in a drawing apparatus that draws a predetermined pattern on a sample using an electron beam.

  Lithography technology, which is responsible for the progress of miniaturization of semiconductor devices, is an extremely important process for generating a pattern among semiconductor manufacturing processes. In recent years, with the high integration of LSI, circuit line widths required for semiconductor devices have been reduced year by year. In order to form a desired circuit pattern on these semiconductor devices, a highly accurate original pattern (also referred to as a reticle or a mask) is required. Here, the electron beam (electron beam) drawing technique has an essentially excellent resolution, and is used for producing a high-precision original pattern.

FIG. 7 is a conceptual diagram for explaining the operation of the variable shaped electron beam drawing apparatus.
The variable shaped electron beam (EB) drawing apparatus operates as follows. In the first aperture 410, a rectangular opening for forming the electron beam 330, for example, a rectangular opening 411 is formed. Further, the second aperture 420 is formed with a variable shaping opening 421 for shaping the electron beam 330 having passed through the opening 411 of the first aperture 410 into a desired rectangular shape. The electron beam 330 irradiated from the charged particle source 430 and passed through the opening 411 of the first aperture 410 is deflected by the deflector, passes through a part of the variable shaping opening 421 of the second aperture 420, and passes through a predetermined range. The sample is irradiated on a stage that moves continuously in one direction (for example, the X direction). That is, the drawing area of the sample 340 mounted on the stage in which the rectangular shape that can pass through both the opening 411 of the first aperture 410 and the variable shaping opening 421 of the second aperture 420 is continuously moved in the X direction. Drawn on. A method of creating an arbitrary shape by passing both the opening 411 of the first aperture 410 and the variable shaping opening 421 of the second aperture 420 is referred to as a variable shaping method (VSB method).

  Here, for example, reflected electrons are generated by irradiating the sample with the above-described electron beam irradiated at the start of drawing. The generated reflected electrons collide with the optical system and detector in the sample apparatus and are charged up, thereby generating a new electric field. Then, the trajectory of the electron beam deflected to the sample is changed by the generated new electric field. At the time of writing, a change in the trajectory of the electron beam, that is, a beam drift occurs, taking such factors as an example. Such beam drift is not constant and is difficult to predict and correct without measurement. Therefore, conventionally, a certain period is determined, and the beam drift amount is measured and corrected every time the period elapses.

  Here, with regard to drift correction, while performing beam drift correction for each preset period, and when a predetermined disturbance element value such as temperature and atmospheric pressure occurs with a predetermined amount of change, the beam is not affected regardless of the period. Techniques for performing drift correction are disclosed in the literature (for example, see Patent Document 1). In addition, the beam drift amount is large at the initial stage immediately after the start of beam irradiation, and tends to gradually decrease with time. Therefore, when the beam drift amount is large (at the initial drift), the drift correction interval. It is also attempted to increase the drift correction interval as the beam drift amount decreases (see, for example, Patent Document 2).

JP 2007-043083 A JP 2000-58424 A

  Here, in the conventional beam drift correction, an interval for executing the correction is usually set in advance, and the beam drift correction is performed only when the preset period arrives. However, after that, as shown in the above-mentioned Patent Document 1 in which one of the inventors of the present application has also become an inventor, it has been found that it may cause drift due to disturbances such as temperature and temperature. When the value of the disturbance element has a predetermined amount of change, beam drift correction is also performed regardless of the passage of time.

  However, with the recent miniaturization and integration of patterns, there is a need to further reduce the amount of misalignment due to beam drift. As a result of intensive studies by the inventors, not only disturbances such as air temperature and temperature, but also other factors that make it difficult to accurately know the time to correct in advance and difficult to set the time for performing beam drift correction occur. It was found that even when the beam drift correction was performed, drawing could be performed at a highly accurate position.

  Therefore, the present invention overcomes this problem and can perform beam drift correction for elements that are difficult to know in advance exactly the time to be corrected without being limited to disturbance elements such as temperature and temperature. The purpose is to provide.

A charged particle beam drawing apparatus according to one embodiment of the present invention includes:
A drawing unit that draws a pattern at a desired position on the sample by deflecting the charged particle beam using the charged particle beam;
A measurement unit for measuring the amount of beam drift of the charged particle beam based on state information indicating the content of the state generated by changing from another state in the apparatus;
A deflection amount calculation unit for calculating a deflection amount for deflecting the charged particle beam corrected using the measured beam drift amount of the charged particle beam;
It is provided with.

  With this configuration, it is possible to correct the beam drift based on a state generated by changing from another state in the apparatus. Therefore, beam drift correction can be performed regardless of the set time. Further, even when a state change other than temperature and atmospheric pressure occurs, beam drift correction can be performed.

In addition, when the state information changes from the other state to the state indicated by the state information, the state information is further input, further comprising a determination unit that determines whether or not the deflection amount correction by the beam drift is necessary based on the input state information,
When it is determined that the deflection amount correction by the beam drift is necessary, it is preferable that an operation for correcting the deflection amount by the beam drift is executed.

The state information includes information indicating the state of the pattern drawn on the sample,
When the change in the pattern state exceeds the threshold value, it is preferable to determine that the deflection amount correction by the beam drift is necessary.

Further, the state information includes information indicating a predetermined state caused by an artificial operation by the user,
It is also preferable that when state information indicating a predetermined state generated by an artificial operation is input, it is determined that a deflection amount correction by beam drift is necessary.

The state information includes information indicating a predetermined state generated by the operation of the device,
It is also preferable that when state information indicating a predetermined state generated by the operation of the apparatus is input, it is determined that a deflection amount correction by beam drift is necessary.

  According to the present invention, beam drift correction can be performed not only for disturbance elements such as air temperature and temperature, but also for elements for which it is difficult to accurately know the time to be corrected in advance. Therefore, a pattern can be drawn at a more accurate position.

1 is a conceptual diagram illustrating a configuration of a drawing apparatus according to Embodiment 1. FIG. It is a figure for demonstrating the mode of XY stage movement. It is a top surface conceptual diagram of the XY stage of FIG. FIG. 4 is a flowchart showing a main part of steps of a beam drift correction method for an electron beam in the first embodiment. It is a figure which shows the relationship between beam drift and time. 7 is a diagram for explaining how to measure the position of a mark in Embodiment 1. FIG. It is a conceptual diagram for demonstrating operation | movement of the conventional variable shaping type | mold electron beam drawing apparatus.

  Hereinafter, in the embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and a beam using charged particles such as an ion beam may be used. Further, a variable shaping type drawing apparatus will be described as an example of the charged particle beam apparatus.

Embodiment 1 FIG.
FIG. 1 is a conceptual diagram illustrating a configuration of a drawing apparatus according to the first embodiment. In FIG. 1, the drawing apparatus 100 includes a drawing unit 150 and a control unit 160. The drawing apparatus 100 is an example of a charged particle beam drawing apparatus. In particular, it is an example of a variable shaping type drawing apparatus. The drawing unit 150 includes an electron column 102 and a drawing chamber 103. In the electron column 102, an electron gun 201, an illumination lens 202, a first aperture 203, a projection lens 204, a deflector 205, a second aperture 206, an objective lens 207, a deflector 208, and a detector 209 are arranged. Has been. An XY stage 105 is disposed in the drawing chamber 103. On the XY stage 105, a sample 101 such as a mask to be drawn at the time of drawing is arranged. The sample 101 includes an exposure mask for manufacturing a semiconductor device. Further, the sample 101 includes mask blanks on which nothing has been drawn yet. On the XY stage 105, a mark 152 is disposed at a position different from the position where the sample 101 is disposed. On the XY stage 105, a mirror 104 is disposed at a position different from the position where the sample 101 is disposed. In addition, a thermometer 108 is disposed near the position where the sample 101 is disposed on the XY stage 105 and inside the XY stage 105. A barometer 106 is disposed around the electron column 102.

  The control unit 160 includes a control computer unit 110, a deflection control circuit 120, a detection circuit 130, storage devices 140 and 142 such as a magnetic disk device, and a laser length measuring device 300. The control computer unit 110, the deflection control circuit 120, the detection circuit 130, the storage devices 140 and 142 such as a magnetic disk device, and the laser length measuring device 300 are connected to each other via a bus (not shown).

  In the control computer unit 110, a memory 51, a drawing data processing unit 50, an event determination unit 52, an execution processing unit 54, a beam drift amount measurement unit 56, a correction unit 58, an atmospheric pressure measurement unit 62, a temperature measurement unit 64, a job ( JOB) control unit 66 and drawing control unit 68 are arranged. The drawing data processing unit 50, event determination unit 52, execution processing unit 54, beam drift amount measurement unit 56, correction unit 58, atmospheric pressure measurement unit 62, temperature measurement unit 64, job (JOB) control unit 66, and drawing control unit 68 Each may be constituted by hardware such as an electric circuit, or may be constituted by software such as a program for executing these functions. Alternatively, it may be configured by a combination of hardware and software. The drawing data processing unit 50, event determination unit 52, execution processing unit 54, beam drift amount measurement unit 56, correction unit 58, atmospheric pressure measurement unit 62, temperature measurement unit 64, job (JOB) control unit 66, and drawing control unit 68 Information input / output to / from and information being calculated are stored in the memory 51 each time.

  In the deflection control circuit 120, adders 72 and 74, a position calculation unit 76, and a deflection amount calculation unit 78 are arranged. The adders 72 and 74, the position calculation unit 76, and the deflection amount calculation unit 78 may each be configured by hardware such as an electric circuit, or may be configured by software such as a program that executes these functions. . Alternatively, it may be configured by a combination of hardware and software. Information input to and output from the adders 72 and 74, the position calculation unit 76, and the deflection amount calculation unit 78 and information being calculated are stored in a memory (not shown) each time.

  In the storage device 140, drawing data serving as layout data is input from the outside of the device and stored. For example, chip data for chip A, chip data for chip B, chip data for chip C, and so on are stored. Each chip is patterned.

  Here, FIG. 1 shows a configuration necessary for explaining the first embodiment. The drawing apparatus 100 may normally have other necessary configurations. For example, the deflector 208 is used for position deflection, but it is also possible to use a multistage deflector having two main and sub stages.

  First, the drawing data processing unit 50 reads out drawing data from the storage device 140, performs a plurality of stages of data conversion processing, and generates shot data in a format for the drawing apparatus 100. Shot data is stored in the storage device 142. Then, drawing is performed using such shot data.

  The electron beam 200 emitted from the electron gun 201 illuminates the entire first aperture 203 having a rectangular hole, for example, a rectangular hole, by the illumination lens 202. Here, the electron beam 200 is first formed into a rectangle, for example, a rectangle. Then, the electron beam 200 of the first aperture image that has passed through the first aperture 203 is projected onto the second aperture 206 by the projection lens 204. The position of the first aperture image on the second aperture 206 is controlled by the deflector 205, and the beam shape and size can be changed. Then, the electron beam 200 of the second aperture image that has passed through the second aperture 206 is focused by the objective lens 207, is deflected by the deflector 208 controlled by the deflection control circuit 120, and is movably disposed. The desired position of the sample 101 on the XY stage 105 is irradiated. The position of the XY stage 105 is measured by irradiating the mirror 104 with a laser from the laser length measuring device 300 and receiving the reflected light from the mirror 104.

  FIG. 2 is a diagram for explaining the movement of the XY stage. When drawing on the sample 101, the drawing (exposure) surface is virtually moved to a plurality of strip-like stripe regions where the electron beam 200 can be deflected while continuously moving the XY stage 105 in the X direction by a driving unit (not shown). The electron beam 200 irradiates one stripe region of the divided sample 101. Simultaneously with the movement of the XY stage 105 in the X direction, the shot position of the electron beam 200 also follows the stage movement. The drawing time can be shortened by continuously moving. When drawing of one stripe area is completed, the XY stage 105 is stepped in the Y direction, and the drawing operation of the next stripe area is performed in the X direction (for example, the opposite direction this time). The moving time of the XY stage 105 can be shortened by making the drawing operation of each stripe region meander.

  FIG. 3 is a conceptual top view of the XY stage of FIG. As shown in FIG. 3, a mark 152 for inspecting the amount of beam drift of the electron beam 200 is provided on the XY stage 105 on which the sample 101 is placed. Here, illustration of the thermometer 108, the mirror 104, etc. is omitted. The mark 152 is formed, for example, in a cross shape so that the position can be easily detected by scanning with the electron beam 200.

  FIG. 4 is a flowchart showing the main parts of the steps of the electron beam drift correction method according to the first embodiment. In the electron beam drift correction, a period unit correction process for correcting the electron beam beam drift every time a period is changed and a specific state (event) changed from another state in the drawing apparatus 100 is generated. And an event unit correction step of correcting the beam drift of the electron beam regardless of the passage of time. Both operate normally independently. However, as described later, when the event unit correction process is performed, it is preferable to reset the period setting in the period unit correction process and start again from the first period. is there.

  4, the electron beam beam drift correction method according to the first embodiment includes a reset step (S102), a period setting step (S104), a period determination step (S106), and an execution instruction step as the period unit correction process. A series of steps of (S108), a drift amount measurement step (S110), a drift correction value calculation / update step (S112), and a drawing determination step (S114) are performed. The electron beam beam drift correction method according to the first embodiment includes an event determination step (S202), an execution instruction step (S204), a drift amount measurement step (S206), and a drift correction value as event unit correction steps. A series of steps of calculation / update step (S208) and device operation determination step (S210) are performed.

When irradiation with the electron beam 200 is started, the electron beam causes beam drift.
FIG. 5 is a diagram showing the relationship between beam drift and time. As shown in FIG. 5, immediately after the start of irradiation, a beam drift (initial drift) of the electron beam itself or due to electron beam irradiation occurs. In the initial drift period in which the initial drift occurs, the amount of change in the beam drift is large, and the amount of change tends to decrease with time. In FIG. 5, the region where the amount of change is small is described as the stable period.

  Therefore, in the first embodiment, as a period unit correction step, immediately after the start of irradiation with a large amount of change in beam drift, in other words, immediately after the start of drawing, the interval of the timing for performing drift correction is shortened, and drawing proceeds with the passage of time. Accordingly, the time interval for performing drift correction is lengthened. In the example of FIG. 5, the drift correction step (1) is corrected three times at the interval of the period t1, and then the drift correction step (2) is corrected four times at the interval of the period t2, which is a period longer than t1. Thereafter, as a drift correction step (3), correction is performed three times at an interval of a period t3 that is a period longer than t2, and then, as a drift correction step (4), correction is performed at an interval of a period t4 that is a period longer than t3. For example, in the drift correction step (1), since the initial beam drift is large, the correction interval period t1 is set to 5 minutes. In the drift correction step (2), since the beam drift is reduced to some extent, the correction interval period t2 is set to 10 minutes. In the drift correction step (3), since the beam drift further decreases, the correction interval period t3 is set to 30 minutes. In the drift correction step (4), since there is almost no beam drift, the correction interval period t4 is set to 60 minutes. Here, the number of steps of the drift correction step may be any number of steps that seems to be optimum. In addition, the length of the period t in each drift correction step may be an arbitrary length considered to be optimum. Similarly, the number of corrections in each drift correction step may be any desired number that seems to be optimal.

  First, the flow of the period unit correction process will be described.

  In S (step) 102, as the reset step (S102), the execution processing unit 54 initializes an interval (period) of timing for performing drift correction.

  As the period setting step (S104), the execution processing unit 54 sets a correction period in the first drift correction step that is defined in advance when drawing is started or before drawing is started. That is, in the example of FIG. 5, the correction period t1 is set.

  As the period determination step (S106), the execution processing unit 54 determines whether or not the elapsed time from when the previous drift correction was performed has reached the set correction period. If not yet reached, the process returns to the beginning of the period determination step (S106). If reached, the process proceeds to S108.

  As the execution instruction step (S108), the execution processing unit 54 outputs an execution instruction (command) so as to execute (start) an operation for beam drift correction, and causes each control circuit to operate.

  In the drift amount measurement step (S110), the drawing apparatus 100 receives the execution instruction, stops the drawing operation, and a beam calibration mark 152 placed on the XY stage 105 separately from the sample 101 is the objective lens 207. The XY stage 105 is moved so as to match the center position. Then, the cross of the mark 152 is scanned with the electron beam 200, the reflected electrons from the mark 152 are detected by the detector 209, amplified by the detection circuit 130, converted into digital data, and the measurement data is converted into a beam drift amount. It outputs to the measurement part 56. The beam drift amount measuring unit 56 measures the drift amount of the electron beam 200 from the input measurement data.

  FIG. 6 is a diagram for explaining how to measure the mark position in the first embodiment. As shown in FIG. 6, by moving the XY stage 105, the mark 152 is moved to each desired position in the deflection region 10. For example, an area that can be deflected by the deflector 208 may be set as the deflection area 10. Then, the deflector 208 deflects the electron beam 200 to each position in the deflection region 10 and scans the mark 152 to measure the mark position. The residual of the deflection position set at each position is determined as the electron beam 200. Obtained as the amount of drift. Here, for example, the predetermined deflection region 10 is performed at a total of 25 points of 5 points × 5 points. When performing main / sub two-stage deflection, the deflection region 10 is further divided into sub-fields (SF) that can be deflected by the sub-deflector, and the position of the main deflector is set at the reference position (for example, the center) of each SF. After the adjustment, the electron beam 200 is deflected to each position in the SF by the sub deflector and scanned on the mark 152 to measure the mark position, and the residual from the deflection position set at each position is determined as the electron beam. What is necessary is just to obtain | require as 200 drift amount.

  In the drift correction value calculation / update step (S112), the correction value calculation unit 58 calculates a correction value for drift correction based on the drift amount measured by the beam drift amount measurement unit 56. And it outputs to the adder 72 which is an example of a correction | amendment part, and a correction value is updated. The adder 72 adds and synthesizes the original design value data and correction value data obtained from the shot data, and corrects the beam drift by rewriting the design data. Then, using the corrected design data and the position data of the XY stage 105 measured by the laser length measuring device 300 and calculated by the position calculation unit 76, the deflection amount calculation unit 78 calculates a deflection amount corresponding to the deflection voltage. It calculates, outputs a deflection amount signal, changes to analog data by an amplifier (not shown), amplifies it, and applies it to the deflector 208 as a deflection voltage. Based on the voltage, the deflector 208 deflects the electron beam 200. As described above, the deflection amount for deflecting the electron beam is corrected using the measured beam drift amount of the electron beam.

  As the drawing determination step (S114), the execution processing unit 54 determines whether or not the drawing process has been completed. If the drawing process has not been completed, the process returns to S104, and if the drawing has been completed, the flow ends. Then, S104 to S114 are repeated during the drawing process. At that time, in the period setting step (S104), as described with reference to FIG. 5, the corresponding period is set each time, and the interval of the timing for performing the drift correction is increased as the drawing progresses with the passage of time.

  Here, the cause of the beam drift is not only the time period as described above, but also other state changes in which it is difficult to accurately know the time to be corrected in advance and it is difficult to set the timing for performing the beam drift correction. . Therefore, in the first embodiment, not only the period unit correction step but also the event unit correction step is performed.

  Here, for example, a state in which the temperature has changed, a state in which the atmospheric pressure has changed, a state in which the content of the pattern to be drawn has changed, a state in which the irradiation time of the beam has changed, or a state in which the drawing operation has been paused by an artificial operation by the user Position errors caused by beam drift may occur when drawing is performed after temporary drawing is stopped in order to transport another substrate during drawing, or when pre-processing is performed before drawing. The inventors found. Examples of the state in which the pattern content has changed include a state in which the pattern density of the pattern has changed. Therefore, in the first embodiment, these states are detected as events, and beam drift correction is performed when these states are changed from other states.

  For example, the temperature measurement unit 64 inputs the data of the thermometer 108, measures the temperature constantly or periodically, and outputs the temperature information to the event determination unit 52 as one of the event information (state information). Similarly, the atmospheric pressure measurement unit 62 inputs the data of the barometer 106, measures the atmospheric pressure constantly or periodically, and outputs the atmospheric pressure information to the event determination unit 52 as one piece of event information (state information). For example, it outputs at intervals of 5 to 10 minutes.

  Further, the JOB control unit 66 controls the contents of the job given to the drawing apparatus 100, and controls, for example, the above-described preprocessing, conveyance processing, and artificial operation by the user. Therefore, the JOB control unit 66 performs the drawing operation when performing the preprocessing operation, performing the operation of temporarily stopping the drawing to transport another substrate during drawing, and performing the drawing operation by the user's manual operation. Each time a pause operation is performed, information indicating a state generated by each operation is output to the event determination unit 52 as one piece of event information (state information).

  Further, the drawing control unit 68 controls the drawing process itself by controlling the drawing data processing unit 50, the deflection control circuit 120, the drawing unit 150, and the like when drawing the sample 101. For this purpose, shot information such as the pattern density of the pattern drawn and the irradiation time of each shot is acquired from the drawing data. Therefore, the drawing control unit 68 outputs information on the pattern density state and the irradiation time state to the event determination unit 52 as one piece of event information (state information). For example, these pieces of information are output constantly or periodically. For example, it outputs at intervals of 0.1 to 1 s.

  As described above, the event determination unit 52 detects a state change in which it is difficult to predict other periods rather than the passage of a period.

  As the event determination step (S202), when the event information described above is input, the event determination unit 52 determines whether or not a deflection amount correction by beam drift is necessary based on the input event information. Specifically, the determination is made as follows. For example, with respect to temperature, atmospheric pressure, pattern density, and irradiation time, respective threshold values are set in advance, and it is determined whether or not the amount of change within a predetermined period has exceeded the threshold value. On the other hand, the preprocessing operation, the drawing pause for transporting another substrate during drawing, and the drawing operation paused by the user by an artificial operation are performed when any event information is input. It is determined that deflection amount correction by beam drift is necessary. Then, the event determination unit 52 outputs information (signal) indicating that the deflection amount correction by the beam drift is necessary to the execution processing unit 54.

  As the execution instruction step (S204), the execution processing unit 54 executes (starts) the operation for correcting the beam drift when the information indicating that the deflection amount correction by the beam drift is necessary is input from the event determining unit 52. In this way, an execution instruction (command) is output to cause each control circuit to operate.

  Next, a drift amount measurement step (S206) is performed. The content of the drift amount measurement step (S206) is the same as that of the drift amount measurement step (S110).

  Next, a drift correction value calculation / update step (S208) is performed. The contents of the drift correction value calculation / update step (S208) are the same as those of the drift correction value calculation / update step (S112). After the drift correction value calculation / update step (S208), the process further proceeds to the reset step (S102), and the execution processing unit 54 initializes an interval (period) for performing drift correction. Thereby, the period in the period unit correction process after the occurrence of the event returns to the first period. When an event occurs, there is a high possibility that the drift amount is large, so it can be corrected frequently by shortening the period. As a result, the amount of drift between when the previous drift correction is performed and when it is performed next can be reduced.

  As the apparatus operation determination step (S210), the execution processing unit 54 determines whether or not the drawing apparatus 100 is in operation. Since preprocessing is performed to start the drawing process, an event may occur. Therefore, here, in the event unit correction step, it is determined whether or not the drawing apparatus 100 is in operation. And when driving | running | working, it returns to the start time of a flowchart.

  As described above, drift correction can be performed regardless of the set time with the occurrence of an event as a trigger.

  The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

  In addition, although descriptions are omitted for parts and the like that are not directly required for the description of the present invention, such as a device configuration and a control method, a required device configuration and a control method can be appropriately selected and used. For example, although the description of the control unit configuration for controlling the drawing apparatus 100 is omitted, it goes without saying that the required control unit configuration is appropriately selected and used.

  In addition, all charged particle beam drawing apparatuses, charged particle beam beam drift correction methods, and charged particle beam drawing methods that include elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention. .

DESCRIPTION OF SYMBOLS 10 Deflection area | region 50 Drawing data process part 51 Memory 52 Event determination part 54 Execution process part 56 Beam drift amount measurement part 58 Correction value calculation part 62 Barometric pressure measurement part 64 Temperature measurement part 66 JOB control part 68 Drawing control part 72 Adder 76 Position Calculation unit 78 Deflection amount calculation unit 100 Drawing apparatus 101, 340 Sample 102 Electron barrel 103 Drawing chamber 104 Mirror 105 XY stage 106 Barometer 108 Thermometer 110 Control computer unit 120 Deflection control circuit 130 Detection circuit 140, 142 Storage device 150 Drawing Unit 152 mark 160 control unit 200 electron beam 201 electron gun 202 illumination lens 203, 410 first aperture 204 projection lens 205, 208 deflector 206, 420 second aperture 207 objective lens 209 detector 300 laser length measuring device 330 electron line 411 Opening 421 Variable shaping opening 430 Charged particle source

Claims (5)

A drawing unit that draws a pattern at a desired position on the sample by deflecting the charged particle beam using a charged particle beam;
A measurement unit for measuring a beam drift amount of the charged particle beam based on state information indicating contents of a state generated by changing from another state in the apparatus;
A deflection amount calculation unit for calculating a deflection amount for deflecting the charged particle beam corrected using the measured beam drift amount of the charged particle beam;
A charged particle beam drawing apparatus comprising: A determination unit that inputs the state information when the state information is changed to a state indicated by the state information and determines whether or not a deflection amount correction by beam drift is necessary based on the input state information;
2. The charged particle beam drawing apparatus according to claim 1, wherein an operation for correcting the deflection amount by the beam drift is executed when it is determined that the deflection amount correction by the beam drift is necessary. The state information includes information indicating a state of a pattern drawn on the sample,
3. The charged particle beam drawing apparatus according to claim 2, wherein when the change in the pattern state exceeds a threshold value, it is determined that the deflection amount correction by the beam drift is necessary. The state information includes information indicating a predetermined state caused by an artificial operation by the user,
4. The charged particle according to claim 2, wherein it is determined that a deflection amount correction by the beam drift is necessary when state information indicating a predetermined state caused by the artificial operation is input. Beam drawing device. The state information includes information indicating a predetermined state caused by the operation of the device,
The charge according to any one of claims 2 to 4, wherein when the state information indicating a predetermined state generated by the operation of the apparatus is input, it is determined that the deflection amount correction by the beam drift is necessary. Particle beam drawing device.

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