JP2011013617A - Developing method - Google Patents

Developing method Download PDF

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Publication number
JP2011013617A
JP2011013617A JP2009159817A JP2009159817A JP2011013617A JP 2011013617 A JP2011013617 A JP 2011013617A JP 2009159817 A JP2009159817 A JP 2009159817A JP 2009159817 A JP2009159817 A JP 2009159817A JP 2011013617 A JP2011013617 A JP 2011013617A
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resist film
developer
shower
developing method
developing
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Pending
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JP2009159817A
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Japanese (ja)
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Tsutomu Miyamoto
ツトム 宮本
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Casio Computer Co Ltd
カシオ計算機株式会社
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Priority to JP2009159817A priority Critical patent/JP2011013617A/en
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Abstract

PROBLEM TO BE SOLVED: To provide a developing method for suppressing rapid shrinkage of a swollen resist film for plating and hardly producing a resist residue upon developing a resist film for plating comprising a dry film resist for forming columnar electrodes, in a semiconductor device having columnar electrodes.SOLUTION: In a developing section 32, an unexposed part of a resist film 25 for plating is swollen and dissolved through a surface in contact with a developing solution to form an opening for forming a columnar electrode in the resist film 25 for plating. In this stage, a dissolved material of the resist remains at the bottom of the opening in the resist film 25 for plating. In an intermediate treating section 33, a developing solution and a rinsing solution are blasted from a shower 42 for the developing solution and a shower 43 for the rinsing solution, respectively, and the blasted solutions are crossed and mixed with each other on the resist film 25 for plating. Thereby, rapid shrinkage of the swollen resist film 25 for plating can be suppressed as well as a resist residue is hardly produced.

Description

  The present invention relates to a developing method, and for example, relates to a developing method for developing a plating resist film for forming a columnar electrode in the manufacture of a semiconductor device having a columnar electrode.

For example, a conventional semiconductor device is known as a CSP (Chip Size Package) (see, for example, Patent Document 1). In this semiconductor device, wiring is provided on the upper surface of an insulating film provided on a semiconductor substrate. A columnar electrode is provided on the upper surface of the connection pad portion of the wiring. A sealing film is provided around the columnar electrode on the upper surface of the insulating film including the wiring. Solder balls are provided on the upper surfaces of the columnar electrodes.

In the conventional method for manufacturing a semiconductor device, the process up to the formation of the columnar electrodes will be briefly described. First, a semiconductor substrate (semiconductor wafer) in which an insulating film is formed is prepared. Next, a base metal layer is formed on the entire top surface of the insulating film. Next, an upper metal layer for wiring is formed on the upper surface of the base metal layer by electrolytic plating.

  Next, a plating resist film having an opening in the connection pad portion of the upper metal layer for wiring, that is, the portion corresponding to the columnar electrode formation region, is formed on the upper surface of the base metal layer including the upper metal layer for wiring. Next, columnar electrodes are formed on the upper surface of the connection pad portion of the upper metal layer for wiring in the opening of the plating resist film by performing electrolytic plating using the base metal layer as a plating current path. Thus, a columnar electrode is formed.

As a plating resist film for forming columnar electrodes, a negative dry film resist is generally used. When an opening for forming a columnar electrode is formed by photolithography in a plating resist film made of a dry film resist laminated on the upper surface of the base metal layer including the upper metal layer for wiring, exposure and development are performed. .

By the way, as a conventional developing device, for example, a device described in Patent Document 2 is known. In this developing device, the developing unit, the rinsing unit, the air knife unit, and the drying unit are arranged in this order from the left side to the right side. And the to-be-processed substrate which has the resist film after exposure on the upper surface passes a developing part, a rinse part, an air knife part, and a drying part in this order.

In the developing unit, the developer is sprayed onto the resist film, and the resist film is patterned. In the rinse section, the rinse solution is sprayed onto the resist film, and the developer adhering to the resist film is washed away. In the air knife part, air is blown onto the resist film, and the rinse liquid adhering to the resist film is blown off. In the drying section, the resist film is irradiated with infrared rays, and the resist film is dried.

JP 2009-60002 A JP 11-204025 A

  By the way, when an opening is formed by patterning a plating resist film for forming a columnar electrode made of a negative dry film resist using the conventional developing device, an unexposed portion of the plating resist film is a developer (carbonic acid carbonate). It swells and dissolves from the surface in contact with the 1% by weight sodium aqueous solution), and an opening is formed in the plating resist film.

  However, as shown in FIG. 12 (A), after the opening 52 is formed in the plating resist film 51 by spraying a developing solution, a rinse solution (pure water) is sprayed to absorb the developing solution and swell the plating. As shown in FIG. 12B, the resist film 51 suddenly shrinks to return from its surface, and the upper part of the opening 52 spreads and the upper part of the columnar electrode formed in the opening 52 is distorted. There is a problem of becoming a shape. Further, if the resist melt 53 remains at the bottom of the opening 52 of the plating resist film 51, the resist melt 53 adheres to the bottom of the opening 52 as it is by spraying a rinsing liquid (pure water). There is also a problem that the electrodes cannot be formed satisfactorily.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a developing method capable of suppressing rapid shrinkage of a swollen resist film and preventing resist residues from being generated.

The invention described in claim 1 includes a step of spraying a developer on the resist film after exposure, a step of spraying a mixed solution of a developer and a rinsing solution on the resist film after being sprayed with the developer, The method includes a step of spraying a rinsing liquid onto the resist film after sprayed with and a step of drying the resist film after sprayed with the rinsing liquid.
According to a second aspect of the present invention, in the first aspect of the invention, the step of spraying the mixed solution of the developer and the rinsing liquid is blown out from the developer and the rinsing liquid shower blown out from the developer shower. The rinsing liquid is mixed on the resist film.
According to a third aspect of the present invention, in the invention of the second aspect, when performing each of the steps while transporting the resist film, the developer shower is disposed on the opposite side of the transport direction, and the rinse liquid The shower is arranged on the conveyance direction side.
According to a fourth aspect of the present invention, in the third aspect of the present invention, the developer shower and the rinsing liquid shower are rod-shaped and arranged so as to be orthogonal to the transport direction, and each central portion thereof. It is characterized in that it can be swung in a direction perpendicular to the conveying direction with a position above the center of the center.
According to a fifth aspect of the present invention, in the first or second aspect of the present invention, the developer is an aqueous sodium carbonate solution.
The invention according to claim 6 is the invention according to claim 1 or 2, wherein the rinse liquid is pure water.
The invention according to claim 7 includes a step of spraying a developer onto the resist film after exposure, a step of spraying a diluted developer onto the resist film after being sprayed with the developer, and a step after spraying the diluted developer. And a step of spraying a rinsing liquid onto the resist film and a step of drying the resist film after the rinsing liquid is sprayed.
The invention described in claim 8 is the invention described in claim 7, wherein the blowout pressure and flow rate of the diluted developer shower for spraying the diluted developer are the blowout pressure of the developer shower for spraying the developer. Further, the pressure is higher and larger than the blowout flow rate.
According to a ninth aspect of the invention, in the seventh aspect of the invention, when the steps are performed while the resist film is transported, the shower for the diluted developer is rod-shaped and orthogonal to the transport direction. It is arranged and is rocked in a direction orthogonal to the transport direction with a position above the central portion as a center.
The invention described in claim 10 is the invention described in claim 1 or 7, wherein the resist film is made of a dry film resist.
According to an eleventh aspect of the present invention, in the invention according to the tenth aspect, the resist film is provided on a semiconductor wafer, and the columnar electrode is formed on the semiconductor wafer by electrolytic plating. It is a feature.
According to a twelfth aspect of the present invention, in the seventh aspect of the invention, the developer is an aqueous sodium carbonate solution.
The invention described in claim 13 is the invention described in claim 7, wherein the rinse liquid is pure water.

  According to the present invention, the resist film after being sprayed with the developer is sprayed with a mixed solution of a developer and a rinsing solution or a diluted developer, thereby suppressing rapid contraction of the swollen resist film, and resist Residues can be made difficult to occur.

Sectional drawing of an example of the semiconductor device manufactured by the manufacturing method containing the image development method of this invention. Sectional drawing of what was initially prepared in an example of the manufacturing method of the semiconductor device shown in FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. FIG. 9 is a cross-sectional view of the process following FIG. 8. 1 is a schematic configuration diagram of an example of a developing device used in a developing method according to a first embodiment of the present invention. The schematic block diagram of an example of the image development apparatus used for the image development method as 2nd Embodiment of this invention. Sectional drawing shown in order to demonstrate the conventional problem.

  FIG. 1 shows a cross-sectional view of an example of a semiconductor device manufactured by a manufacturing method including the developing method of the present invention. This semiconductor device is generally called a CSP and includes a silicon substrate (semiconductor substrate) 1. On the upper surface of the silicon substrate 1, elements constituting an integrated circuit having a predetermined function, for example, elements (not shown) such as a transistor, a diode, a resistor, and a capacitor are formed. A connection pad 2 made of an aluminum-based metal or the like connected to each element is provided. Although only two connection pads 2 are shown in the figure, a large number are actually arranged around the upper surface of the silicon substrate 1.

  A passivation film 3 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 1 excluding the peripheral portion of the silicon substrate 1 and the central portion of the connection pad 2, and the central portion of the connection pad 2 is an opening provided in the passivation film 3. 4 is exposed. A protective film 5 made of polyimide resin or the like is provided on the upper surface of the passivation film 3. An opening 6 is provided in the protective film 5 in a portion corresponding to the opening 4 of the passivation film 3.

  A wiring 7 is provided on the upper surface of the protective film 5. The wiring 7 has a two-layer structure of a base metal layer 8 made of copper or the like provided on the upper surface of the protective film 5 and an upper metal layer 9 made of copper provided on the upper surface of the base metal layer 8. One end of the wiring 7 is connected to the connection pad 2 via the openings 4 and 6 of the passivation film 3 and the protective film 5.

  A columnar electrode 10 made of copper is provided on the upper surface of the connection pad portion of the wiring 7. A sealing film 11 made of epoxy resin or the like is provided around the columnar electrode 10 on the upper surface of the protective film 5 including the wiring 7. The columnar electrode 10 is provided so that the upper surface thereof is flush with the upper surface of the sealing film 11 by several μm. A solder ball 12 is provided on the upper surface of the columnar electrode 10.

  Next, an example of a method for manufacturing this semiconductor device will be described. First, as shown in FIG. 2, the upper surface of a silicon substrate in a wafer state (hereinafter referred to as a semiconductor wafer 21) is made of a connection pad 2 made of aluminum metal, a passivation film 3 made of silicon oxide, and a polyimide resin. A protective film 5 is formed, and the connection pad 2 is exposed such that the central portion is exposed through the passivation film 3 and the openings 4 and 6 of the protective film 5. In FIG. 2, a region indicated by reference numeral 22 is a dicing street. Then, the passivation film 3 and the protective film 5 in the portions corresponding to the dicing street 22 and both sides thereof are removed.

  Next, as shown in FIG. 3, it corresponds to the upper surface of the protective film 5 including the upper surface of the connection pad 2 exposed through the openings 4 and 6 of the passivation film 3 and the protective film 5, and the dicing street 22 and both sides thereof. A base metal layer 8 is formed on the upper surface of the semiconductor wafer 21 at the portion to be formed. In this case, the base metal layer 8 may be only a copper layer formed by electroless plating, or may be only a copper layer formed by sputtering, and a thin film such as titanium formed by sputtering. A copper layer may be formed on the layer by sputtering.

  Next, an upper metal layer plating resist film 23 made of a positive liquid resist is patterned on the upper surface of the base metal layer 8. In this case, an opening 24 is formed in the upper metal layer plating resist film 23 in a portion corresponding to the upper metal layer 9 formation region by photolithography. Next, when copper is electroplated using the base metal layer 8 as a plating current path, the upper metal layer 9 is formed on the upper surface of the base metal layer 8 in the opening 24 of the upper metal layer plating resist film 23. . Next, the upper metal layer plating resist film 23 is peeled off.

  Next, as shown in FIG. 4, a columnar electrode forming plating resist film 25 made of a negative dry film resist is patterned on the upper surface of the base metal layer 8 including the upper metal layer 9. In this case, an opening 26 is formed in the columnar electrode forming plating resist film 25 in a portion corresponding to the connection pad portion (columnar electrode 10 formation region) of the upper metal layer 9 by a photolithography method including a developing method described later. Has been.

  Next, when electrolytic plating of copper is performed using the base metal layer 8 as a plating current path, the columnar electrode 10 is formed on the upper surface of the connection pad portion of the upper metal layer 9 in the opening 26 of the columnar electrode forming plating resist film 25. Is done. Next, the columnar electrode forming plating resist film 25 is peeled off. Next, when the base metal layer 8 is removed by etching in a region other than under the upper metal layer 9 using the upper metal layer 9 as a mask, the base metal layer 8 remains only under the upper metal layer 9 as shown in FIG. Is done. In this state, the upper metal layer 9 and the underlying metal layer 8 remaining below the upper metal layer 9 form a two-layer wiring 7.

  Next, as shown in FIG. 6, the sealing film 11 made of epoxy resin or the like is formed on the upper surface of the protective film 5 including the wiring 7 and the columnar electrode 10 by the spin coat method or the like so that the thickness thereof is higher than the columnar electrode 10. It is formed to be a little thicker. Therefore, in this state, the upper surface of the columnar electrode 10 is covered with the sealing film 11.

  Next, the upper surface side of the sealing film 11 is appropriately ground to expose the upper surface of the columnar electrode 10 and the sealing film 11 including the exposed upper surface of the columnar electrode 10 as shown in FIG. Flatten the top surface. Next, as shown in FIG. 8, solder balls 12 are formed on the upper surface of the columnar electrode 10. Next, as shown in FIG. 9, when the sealing film 11 and the semiconductor wafer 21 are cut along the dicing street 22, a plurality of semiconductor devices shown in FIG. 1 are obtained.

(First embodiment)
Here, a developing method for forming the opening 26 in the columnar electrode forming plating resist film 25 (hereinafter simply referred to as a plating resist film 25) made of a negative dry film resist will be described. First, FIG. 1 is a schematic configuration diagram of an example of a developing device used in a developing method as a first embodiment of the present invention.

  In this developing device, the delivery cassette unit 31, the developing unit 32, the intermediate processing unit 33, the rinse unit 34, the drying unit 35, and the storage cassette unit 36 are arranged in this order from the left side to the right side. Then, the semiconductor wafer 21 having the exposed plating resist film 25 on the upper surface is fed out from the feeding cassette unit 31 and conveyed by the conveyor 37, and the developing unit 32, the intermediate processing unit 33, the rinsing unit 34, and the drying unit 35 are moved through the conveyor unit 37. It passes through in order and is stored in the storage cassette part 36.

In the developing unit 32, a plurality of bar-shaped developer showers 41 are arranged above the conveyor 37 so as to be orthogonal to the conveyance direction of the semiconductor wafer 21, and the developer is lowered from the developer shower 41 as indicated by an arrow. It comes to be blown out towards. In the intermediate processing unit 33, a single bar-shaped developer shower 42 is disposed on the left side (developing unit 32 side) above the conveyor 37 so as to be orthogonal to the transfer direction of the semiconductor wafer 21, and the right side above the conveyor 37. A single rod-shaped rinsing liquid shower 43 is disposed on the (rinsing portion 34 side) so as to be orthogonal to the transport direction of the semiconductor wafer 21, and the developing liquid is obliquely downwardly and downwardly as indicated by an arrow from the developing liquid shower 42. Simultaneously with this blowing, the rinsing liquid is blown from the rinsing liquid shower 43 obliquely to the lower left as indicated by the arrow, and the two liquids blown at a preset position on the conveyor 37 intersect. To mix.

In the rinsing section 34, a plurality of rod-shaped rinsing liquid showers 44 are arranged above the conveyor 37 so as to be orthogonal to the conveyance direction of the semiconductor wafer 21, and the rinsing liquid from the rinsing liquid shower 44 is downward as indicated by an arrow. It comes to be blown out towards. In the drying unit 35, a flat plate-like high-temperature nitrogen gas discharge plate 45 is disposed above the conveyor 37, and the high-temperature nitrogen gas discharge plate 45 is blown out downward as indicated by an arrow. Yes.

Next, a developing method using this developing device will be described. The semiconductor wafer 21 having the exposed plating resist film 25 on the upper surface is sent out from the delivery cassette unit 31 and conveyed by the conveyor 37, and the developing unit 32, the intermediate processing unit 33, the rinse unit 34, and the drying unit 35 are arranged in this order. It passes and is stored in the storage cassette unit 36.

At this time, in the developing unit 32, the developer is blown downward from the developer shower 42 as indicated by an arrow, and is sprayed onto the plating resist film 25. Then, the non-exposed portion of the plating resist film 25 swells and dissolves from the surface in contact with the developer (sodium carbonate 1 wt% aqueous solution), and an opening 26 (see FIG. 4) is formed in the plating resist film 25. In the developing solution in the developing process, there is a resist melt (not shown) that becomes a residue. In this state, the resist melt (not shown) remains at the bottom of the opening 26 of the plating resist film 25. is doing.

In the intermediate processing unit 33, the developer (sodium carbonate 1 wt% aqueous solution) is blown from the developer shower 42 obliquely downward to the right as indicated by the arrow, and simultaneously with this blowing, the rinse solution ( As indicated by the arrow, the pure water) is blown out obliquely downward to the left, and the two liquids blown out on the plating resist film 25 are crossed and mixed.

Since the developer (1% by weight sodium carbonate aqueous solution) is alkaline, if it is directly conveyed to the rinse part 34 without passing through the intermediate processing part 33, only the rinse liquid (pure water) is sprayed. As a result, the alkali concentration suddenly decreases, and a resist melt (not shown) adheres to the bottom of the opening 26 of the plating resist film 25. Although water is necessary to reduce the adhesion, it is effective to slowly replace with rinsing liquid (pure water), and it is effective to blow out the developer and rinsing liquid at the same time, and then perform the rinsing step to rapidly discharge alkali. Change in concentration can be suppressed, and adhesion of resist melt can be suppressed.

Therefore, the plating resist film 25 swollen by absorbing the developing solution comes into contact with the mixed solution of the developing solution and the rinsing solution, so that rapid contraction is suppressed and the plating resist film 25 contracts gently. As a result, the upper part of the opening 26 of the plating resist film 25 does not spread, and the upper part of the columnar electrode 10 (see FIG. 4) can be prevented from having a distorted shape. Further, the resist dissolved matter remaining at the bottom of the opening 26 of the plating resist film 25 is washed away by the mixed solution of the developing solution and the rinsing solution so that the resist residue is hardly generated.

Here, in the intermediate processing unit 33, the developer shower 42 is disposed on the left side above the conveyor 37 (opposite to the conveying direction of the semiconductor wafer 21), and the right side above the conveyor 37 (on the conveying direction side of the semiconductor wafer 21). The rinsing solution shower 43 is disposed in the structure in order to allow the rinsing solution to come into contact with the plating resist film 25 after the developing solution has come into contact therewith. On the contrary, it is not preferable because the developing solution comes into contact with the plating resist film 25 after the rinsing solution comes into contact therewith.

In the rinsing section 34, the rinsing liquid is blown downward as indicated by an arrow from the rinsing liquid shower 44, sprayed onto the plating resist film 25, and the developer adhering to the plating resist film 25 is washed away. In the drying unit 35, the high-temperature nitrogen gas is blown downward from the high-temperature nitrogen gas discharge plate 45 as indicated by an arrow, and sprayed onto the plating resist film 25, so that the plating resist film 25 is dried.

By the way, when the developer (1% by weight sodium carbonate aqueous solution) and the rinse solution (pure water) are mixed in the intermediate processing unit 33, the concentration of the developer becomes thin, and the developer can be circulated and reused. It becomes impossible. Then, next, an embodiment in which the developer can be circulated and reused will be described.

(Second Embodiment)
FIG. 11 shows a schematic configuration diagram of an example of a developing device used in the developing method according to the second embodiment of the present invention. This developing apparatus is different from the developing apparatus shown in FIG. 10 in that the intermediate processing unit 33 has a plurality of bar-shaped diluted developer showers 46 disposed above the conveyor 37 so as to be orthogonal to the transport direction of the semiconductor wafer 21. And the diluted developer is blown out downward from the diluted developer shower 46 as indicated by an arrow.

In the developing method using this developing device, the same effect as in the first embodiment can be obtained, and the intermediate processing unit 33 is not mixed with the rinsing liquid. The diluted developer (0.5% by weight or less sodium carbonate aqueous solution) blown out from the water can be circulated and reused. In this case, it is desirable that the blowing pressure and blowing flow rate of the diluted developer shower 46 be higher and larger than the blowing pressure and blowing flow rate of the developer shower 41 of the developing unit 32. In this way, it is possible to easily remove the resist melt remaining on the bottom of the opening 26 of the plating resist film 25.

(Other embodiments)
In the case shown in FIG. 10, the rod-shaped developer shower 42 and the rod-shaped rinse solution shower 43 are swung in a direction perpendicular to the transport direction of the semiconductor wafer 21 around a predetermined position above each central portion. You may make it make it. Further, in the case shown in FIG. 11, the diluted developer shower 46 may be swung in a direction orthogonal to the transport direction of the semiconductor wafer 21 around a predetermined position above the central portion. Further, in each of the cases shown in FIGS. 10 and 11, an air nozzle that blows high-pressure air is provided between the rinse part 34 and the drying part 35 in order to blow away the rinse liquid adhered to the plating resist film 25 in the rinse part 34. You may make it provide the air knife part which has.

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Connection pad 3 Passivation film 5 Protective film 7 Wiring 10 Columnar electrode 11 Sealing film 12 Solder ball 21 Semiconductor wafer 22 Dicing street 23 Upper metal layer plating resist film 24 Opening 25 Columnar electrode plating resist film 26 Opening Section 31 Delivery cassette section 32 Development section 33 Intermediate processing section 34 Rinse section 35 Drying section 36 Storage cassette section 37 Conveyor 41 Shower for developer 42 Shower for developer 43 Shower for rinse liquid 44 Shower for rinse liquid 45 Hot nitrogen gas release plate 46 Dilute developer shower

Claims (13)

  1. A step of spraying a developer onto the resist film after exposure;
    Spraying a mixed solution of a developing solution and a rinsing solution onto the resist film after being sprayed with the developing solution;
    A step of spraying a rinsing liquid on the resist film after the liquid mixture is sprayed;
    Drying the resist film after being sprayed with a rinsing liquid;
    A developing method characterized by comprising:
  2. In the first aspect of the present invention, the step of spraying the mixed solution of the developer and the rinsing liquid may be performed by applying the developer blown out from the developer shower and the rinse liquid blown out from the rinse shower onto the resist film. A developing method characterized by being a step of mixing in a step.
  3.   In the invention of claim 2, when performing each step while transporting the resist film, the developer shower is disposed on the opposite side of the transport direction, and the rinse liquid shower is disposed on the transport direction side. The developing method characterized by the above-mentioned.
  4.   In the invention according to claim 3, the shower for the developing solution and the shower for the rinsing solution are rod-shaped and arranged so as to be orthogonal to the transport direction, and are transported around a position above each central portion thereof. A developing method characterized by being swung in a direction perpendicular to the direction.
  5. 3. The developing method according to claim 1, wherein the developer is an aqueous sodium carbonate solution.
  6. 3. The developing method according to claim 1, wherein the rinse liquid is pure water.
  7. A step of spraying a developer onto the resist film after exposure;
    A step of spraying a diluted developer onto the resist film after the developer is sprayed;
    A step of spraying a rinsing solution on the resist film after the diluted developer is sprayed;
    Drying the resist film after being sprayed with a rinsing liquid;
    A developing method characterized by comprising:
  8.   In the invention according to claim 7, the blowing pressure and blowing flow rate of the diluted developer shower for spraying the diluted developer are higher and larger than the blowing pressure and blowing flow rate of the developer shower for spraying the developer. A developing method characterized by comprising:
  9.   In the invention according to claim 7, when performing each of the steps while transporting the resist film, the diluted developer shower is rod-shaped and arranged so as to be orthogonal to the transport direction, and at the center thereof. A developing method characterized in that it is swung in a direction perpendicular to the conveying direction with an upper position as a center.
  10.   8. The developing method according to claim 1, wherein the resist film is made of a dry film resist.
  11.   11. The developing method according to claim 10, wherein the resist film is provided on a semiconductor wafer, and the columnar electrode is formed on the semiconductor wafer by electrolytic plating.
  12. 8. The developing method according to claim 7, wherein the developer is an aqueous sodium carbonate solution.
  13. 8. The developing method according to claim 7, wherein the rinse liquid is pure water.

JP2009159817A 2009-07-06 2009-07-06 Developing method Pending JP2011013617A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8547058B2 (en) 2011-01-26 2013-10-01 Panasonic Corporation Non-contact charging module and reception-side and transmission-side non-contact charging apparatuses using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8547058B2 (en) 2011-01-26 2013-10-01 Panasonic Corporation Non-contact charging module and reception-side and transmission-side non-contact charging apparatuses using the same
US8928278B2 (en) 2011-01-26 2015-01-06 Panasonic Intellectual Property Management Co., Ltd. Non-contact charging module and reception-side and transmission-side non-contact charging apparatuses using the same

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