JP2010245239A - Photoresist removing device - Google Patents

Photoresist removing device Download PDF

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JP2010245239A
JP2010245239A JP2009091584A JP2009091584A JP2010245239A JP 2010245239 A JP2010245239 A JP 2010245239A JP 2009091584 A JP2009091584 A JP 2009091584A JP 2009091584 A JP2009091584 A JP 2009091584A JP 2010245239 A JP2010245239 A JP 2010245239A
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substrate
ozone water
photoresist
cleaning nozzle
support base
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JP5280280B2 (en
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Makoto Hotta
誠 堀田
Motonori Yanagi
基典 柳
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Nomura Micro Science Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To prevent the re-adhesion of a photoresist and a reaction product of ozone to a cleaning region of a substrate surface, in a photoresist removing device using high density ozone water. <P>SOLUTION: A photoresist removing device includes a support base which supports and rotates a substrate for cleaning, a cleaning nozzle arrangingly provided on the upper part of the support base, the filling port of which is pointed downward, and a high density ozone water-supplying apparatus which supplies the high density ozone water to the cleaning nozzle, wherein the cleaning nozzle consists of a plurality of unit cleaning nozzles arranged leaving a predetermined distance from the rotation center of the substrate, each cleaning unit nozzle is arranged shifting in the circumference direction of the substrate so that the overlap of the direction of the flow of the high density ozone water discharged from each unit cleaning nozzle on the substrate is reduced. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、基板上の不要なフォトレジストを除去する装置に係り、特に、半導体製造工程において、ドライエッチング処理や高電流イオン注入処理が施された基板表面に残存するフォトレジストを、高濃度オゾン水により均一に除去することのできるフォトレジスト除去装置に関する。   The present invention relates to an apparatus for removing unnecessary photoresist on a substrate, and in particular, in a semiconductor manufacturing process, a photoresist remaining on a substrate surface that has been subjected to dry etching treatment or high current ion implantation treatment is subjected to high concentration ozone. The present invention relates to a photoresist removing apparatus that can uniformly remove with water.

従来、半導体製造工程において、ドライエッチング処理や高電流イオン注入処理が施されたシリコン基板の表面に残存する不要なフォトレジストを除去するために、回転する支持台上に支持させたシリコン基板の表面に洗浄ノズルから、溶剤や薬品を吐出して残存するフォトレジストを溶解除去することが行われている。
しかし、この方法では、溶剤や薬品を含む大量の廃液が生じる上に、これらの溶剤や薬品は一般に排出規制があるため、特別の処理施設を必要とし、コスト面及び環境面の両面で大きい負担となっていた。
Conventionally, in a semiconductor manufacturing process, the surface of a silicon substrate supported on a rotating support table is used to remove unnecessary photoresist remaining on the surface of a silicon substrate that has been subjected to dry etching or high current ion implantation. In addition, a remaining nozzle is dissolved and removed by discharging a solvent or chemical from a cleaning nozzle.
However, this method generates a large amount of waste liquid containing solvents and chemicals, and these solvents and chemicals are generally subject to emission control. Therefore, special treatment facilities are required, and both the cost and the environment are heavy. It was.

このため、近時、不要なフォトレジストが残存するシリコン基板の表面に排出規制のないオゾン水を供給して、オゾンの酸化力により残存するフォトレジストを除去する方法が検討されている(特許文献1参照)。
しかしながら、オゾンは従来から使用されていた、たとえば、硫酸と過酸化水素水の混合液と比べれば強い酸化力を持つものの、自己分解性があるため溶剤や薬品を使用するものと比べれば、剥離作用において、なお不十分であるという難点がある。
For this reason, recently, a method has been studied in which ozone water having no emission restriction is supplied to the surface of a silicon substrate where unnecessary photoresist remains, and the remaining photoresist is removed by the oxidizing power of ozone (Patent Document). 1).
However, ozone has been used in the past, for example, it has a strong oxidizing power compared to a mixed solution of sulfuric acid and hydrogen peroxide solution, but it is self-degradable, so it is peeled off compared to those using solvents and chemicals. There is a drawback that it is still insufficient in operation.

特に、回転する支持台上に、フォトレジストが残存するシリコン基板を支持させ、その表面中心部にノズルからオゾン水を吐出させると、基板の表面の単位面積あたりを流れるオゾン水の流量は、中心部から離れるにつれて、基板の半径の二乗に反比例して少なくなるため、300mmφのような大径の基板では特に周縁部に対するオゾンの供給量が少なくなってしまうため、周縁部のフォトレジストの剥離が難しくなる。   In particular, when a silicon substrate on which a photoresist remains is supported on a rotating support base and ozone water is discharged from a nozzle to the center of the surface, the flow rate of ozone water flowing per unit area of the surface of the substrate is the center. Since the amount of ozone supplied to the peripheral portion decreases particularly in a large-diameter substrate such as 300 mmφ, the photoresist peels off at the peripheral portion because it decreases in inverse proportion to the square of the radius of the substrate as it moves away from the peripheral portion. It becomes difficult.

さらに、高濃度オゾン水は、その強い酸化力のため、除去されたフォトレジストの溶解物が酸化して沈着性の反応生成物が生じ、それが基板の周縁部に沈着して、まだ剥離していないフォトレジストとオゾンとの接触を阻害し、このため周縁部のフォトレジストの除去が一層難しくなるという問題があった。   Furthermore, due to its strong oxidizing power, the high-concentration ozone water oxidizes the removed photoresist solution to form a deposition reaction product, which deposits on the peripheral edge of the substrate and still peels off. There is a problem that the contact between the unexposed photoresist and ozone is obstructed, which makes it more difficult to remove the peripheral photoresist.

特開2006−295091号公報JP 2006-295091 A

上述したように、従来のオゾン水によるフォトレジストの除去方法では、基板の周縁部へのオゾンの供給が不十分な上に、基板の周縁部に除去されたフォトレジストの溶解物とオゾンの反応生成物が沈着して、剥離されていないフォトレジストとオゾンの接触を阻害するため、周縁部のフォトレジストの除去が困難であるという問題があった。   As described above, in the conventional photoresist removal method using ozone water, ozone is not sufficiently supplied to the peripheral portion of the substrate, and the reaction between the dissolved solution of the photoresist removed at the peripheral portion of the substrate and ozone. There is a problem that it is difficult to remove the photoresist on the peripheral portion because the product is deposited and obstructs the contact between the photoresist and the unpeeled photoresist.

本発明は、上記従来の問題を解決するもので、シリコン基板表面に残存する不要なフォトレジストを、高濃度オゾン水によって均一に除去するフォトレジスト除去装置を提供することを目的とする。   The present invention solves the above-described conventional problems, and an object thereof is to provide a photoresist removing apparatus that uniformly removes unnecessary photoresist remaining on the surface of a silicon substrate with high-concentration ozone water.

本発明のフォトレジスト除去装置の一つの実施形態は、洗浄対象の基板を支持して回転する支持台と、前記支持台の上方に、注水口を下方に向けて配設された洗浄ノズルと、前記洗浄ノズルに高濃度オゾン水を供給する高濃度オゾン水供給装置とを備えたフォトレジスト除去装置であって、前記洗浄ノズルは、前記支持台の回転中心からそれぞれ所定の距離をおいて配置された複数の単位洗浄ノズルからなり、少なくとも前記基板の周縁部における前記各単位洗浄ノズルが、前記各単位洗浄ノズルから吐出された高濃度オゾン水の前記基板上における流れの方向の重なりが少なくなるよう前記支持台の周方向にずらして配置されていることを特徴とする。   One embodiment of the photoresist removing apparatus of the present invention includes a support base that rotates while supporting a substrate to be cleaned, a cleaning nozzle disposed above the support base with a water inlet facing downward, A photoresist removal apparatus comprising a high-concentration ozone water supply device for supplying high-concentration ozone water to the cleaning nozzle, wherein the cleaning nozzle is disposed at a predetermined distance from the rotation center of the support base. A plurality of unit cleaning nozzles, and at least each of the unit cleaning nozzles at the peripheral edge of the substrate is less overlapped in the flow direction on the substrate of the high-concentration ozone water discharged from each of the unit cleaning nozzles. The support bases are arranged so as to be shifted in the circumferential direction.

本実施形態で用いる高濃度オゾン水は、たとえばGRシリーズとして市販されているGR−RB(ガス流量4L/min(N))、GR−RC(ガス流量6L/min(N))、GR−RD(ガス流量8L/min(N))、GR−RE(ガス流量10L/min(N))、GR−RF(ガス流量12L/min(N))、GR−RG(ガス流量14L/min(N))[いずれも住友精密工業社商品名、ガス圧力0.2MPa]として知られるオゾナイザーで生成したオゾンガスを、所定の濃度(例えば140ppm)で超純水に溶解させたものを使用することができる。
また、この実施形態で用いる支持台としては、2000〜6000r.p.mで回転する汎用の回転支持台を使用することができる。
The high-concentration ozone water used in the present embodiment is, for example, GR-RB (gas flow rate 4 L / min (N)), GR-RC (gas flow rate 6 L / min (N)), GR-RD commercially available as the GR series. (Gas flow rate 8 L / min (N)), GR-RE (gas flow rate 10 L / min (N)), GR-RF (gas flow rate 12 L / min (N)), GR-RG (gas flow rate 14 L / min (N) )) [Each ozone gas generated by an ozonizer known as Sumitomo Seimitsu Kogyo Co., Ltd., product name, gas pressure 0.2 MPa], which is dissolved in ultrapure water at a predetermined concentration (for example, 140 ppm) can be used. .
Moreover, as a support stand used by this embodiment, 2000-6000r. p. A general-purpose rotation support that rotates at m can be used.

本発明のフォトレジスト除去装置は、基本的に洗浄ノズルが、支持台の回転中心からそれぞれ所定の距離をおいて配置された複数の単位洗浄ノズルからなり、少なくとも周縁部における各単位洗浄ノズルが、各単位洗浄ノズルから吐出された高濃度オゾン水の前記基板上における流れの方向の重なりが少なくなるよう支持台の周方向にずらして配置されている。
これによって、従来、中心部側だけに配設されていたため、周縁部のオゾン水の水量が少なくなり、これに起因して生じていた、剥離の不均一が改善される。
フォトレジスト除去のための回転する支持台では、剥離されたフォトレジストを遠心力で除去するために、2000〜6000r.p.mのような高速で回転しており、ノズルから吐出された高濃度オゾン水は、遠心力により、ほとんど半径方向に飛散し、このため、複数の単位洗浄ノズルを基板の中心部から基板の周縁部にかけて直線的に配置すると、各単位洗浄ノズルから吐出された高濃度オゾン水は、周縁部へ向かう流れが重なってしまい、その結果、周縁部に反応生成物が沈着しやすくなる。
本発明によれば、複数の独立した単位洗浄ノズルを、例えば、基板の中心部から周縁部に至る360°以下の開螺旋をなすよう配置することによって解消される。
各単位洗浄ノズルをこのように配置すると、各単位洗浄ノズルと基板の中心を結ぶ線の重なりはなくなり、周縁部における反応生成物の沈着は減少する。
なお、各単位洗浄ノズルを多数設ける場合には、それぞれ隣接する単位洗浄ノズルどうしを連通させた一連のスリット状に形成するようにしてもよい。
また、基板に沈着したフォトレジストとオゾンの反応生成物を除去するために、支持台上に単位洗浄ノズルの配置のない扇形の領域を作り、ここにエアナイフを配置して吐出された高濃度オゾン水の層をエアナイフで直ちに除去することにより、周縁部における沈着防止をより確実にすることができる。
さらに、単位洗浄ノズル、特に支持台の周縁部に配置される単位洗浄ノズルに超音波振動子を取り付け、吐出する高濃度オゾン水に超音波を印加して反応生成物の基板への沈着をより確実に防止することもできる。
超音波振動子の周波数は、100kHz〜1MHzで入力パワーは30〜200W程度が好ましい。
回転する支持台に支持された基板の中心に高濃度オゾン水を供給した場合、周縁部の基板表面に供給される単位面積あたりのオゾン量(高濃度オゾン水の量)は半径の2乗に反比例して減少する。
したがって、基板の周縁部に供給されるオゾンの量(高濃度オゾン水の量)を多くすることにより、より一層、基板周縁部の沈着物の生成を防止することができる。
基板の周縁部に供給されるオゾンの量を多くする方策としては、(1)基板の半径方向に配設する単位洗浄ノズルの数を、中心部側から周縁部側に向かって多くなるようにする、(2)基板の半径方向に配設する単位洗浄ノズルから吐出する高濃度オゾン水の流量を、中心部側から周縁部側に向かって多くなるようにする、(3)基板の半径方向に配設する単位洗浄ノズルから吐出する高濃度オゾン水のオゾン濃度を、中心部側から周縁部側に向かって高濃度とする、(4)これらの方法を組み合わせる、等の方法をとることができる。
In the photoresist removing apparatus of the present invention, the cleaning nozzle is basically composed of a plurality of unit cleaning nozzles arranged at a predetermined distance from the center of rotation of the support base, and each unit cleaning nozzle at least in the peripheral portion, The high-concentration ozone water discharged from each unit cleaning nozzle is arranged so as to be shifted in the circumferential direction of the support base so that the overlapping of the flow directions on the substrate is reduced.
As a result, the amount of ozone water in the peripheral portion is reduced because it has been conventionally disposed only on the center portion side, and the non-uniformity of peeling caused by this is improved.
In the rotating support for removing the photoresist, in order to remove the peeled photoresist by centrifugal force, 2000 to 6000 r. p. The high-concentration ozone water discharged from the nozzle is scattered almost in the radial direction due to the centrifugal force. Therefore, a plurality of unit cleaning nozzles are moved from the center of the substrate to the periphery of the substrate. When arranged linearly over the part, the high-concentration ozone water discharged from each unit cleaning nozzle overlaps the flow toward the peripheral part, and as a result, the reaction product tends to deposit on the peripheral part.
According to the present invention, a plurality of independent unit cleaning nozzles can be eliminated by arranging, for example, an open spiral of 360 ° or less from the center to the peripheral edge of the substrate.
When each unit cleaning nozzle is arranged in this way, there is no overlap of the lines connecting each unit cleaning nozzle and the center of the substrate, and the deposition of reaction products at the peripheral portion is reduced.
When a large number of unit cleaning nozzles are provided, they may be formed in a series of slits in which adjacent unit cleaning nozzles communicate with each other.
In addition, in order to remove the photoresist and ozone reaction products deposited on the substrate, a fan-shaped area without the unit cleaning nozzle is formed on the support table, and the high-concentration ozone discharged by placing an air knife here By immediately removing the water layer with an air knife, it is possible to more reliably prevent deposition at the periphery.
Furthermore, an ultrasonic vibrator is attached to the unit cleaning nozzle, particularly the unit cleaning nozzle arranged at the peripheral edge of the support base, and ultrasonic waves are applied to the high-concentration ozone water to be discharged, so that the reaction product is deposited on the substrate. It can also be surely prevented.
The frequency of the ultrasonic transducer is preferably 100 kHz to 1 MHz and the input power is preferably about 30 to 200 W.
When high-concentration ozone water is supplied to the center of the substrate supported by the rotating support base, the amount of ozone per unit area (the amount of high-concentration ozone water) supplied to the substrate surface at the periphery is the square of the radius. Decreases in inverse proportion.
Therefore, by increasing the amount of ozone supplied to the peripheral portion of the substrate (the amount of high-concentration ozone water), the generation of deposits on the peripheral portion of the substrate can be further prevented.
As a measure for increasing the amount of ozone supplied to the peripheral edge of the substrate, (1) the number of unit cleaning nozzles arranged in the radial direction of the substrate is increased from the central side toward the peripheral side. (2) The flow rate of the high-concentration ozone water discharged from the unit cleaning nozzle disposed in the radial direction of the substrate is increased from the central side toward the peripheral side. (3) The radial direction of the substrate The ozone concentration of the high-concentration ozone water discharged from the unit cleaning nozzle disposed in is increased from the central side toward the peripheral side, and (4) a combination of these methods can be taken. it can.

(1)の単位洗浄ノズルの数を、中心部側から周縁部側に向かって多くするには、例えば、洗浄ノズルを基板の半径方向に、複数区画に区分し、各区分に属する環状(中心部は円状)の各領域に、中心に1個、中心から次の同心円上に2個、その次の同心円上には3個、……というように、周縁部にいくにしたがって単位洗浄ノズルの数が多くなるようにする。このとき、環状の領域の幅を等しくすると、周縁部にいくにしたがって同心円の円周方向の間隔が広くなるので、中心部側では、環状の領域の幅を広く、周縁部側の方で狭くすることが望ましい。この方式は、本発明において単位洗浄ノズルを開螺旋状に配置する場合に、隣接する単位洗浄ノズルの距離を調整することにより容易に実現することができる。(2)の方法は、ノズルの間隔を変える代わりに、各単位洗浄ノズルの流量を周縁部側で多くなるようにする方法であり、例えば単位洗浄ノズルの穴径を周縁部側に向けて順次大きくすることにより実現できる。(3)の方法は、洗浄ノズルの数を周縁部側で多くする代わりに、周縁部側のオゾン濃度を高くする方法である。(4)の方法は、これらの方法を組み合わせたもので、例えば(1)のと(2)の方法を組み合わせることにより、使用する単位洗浄ノズル数(ノズルの孔数)を少なくすることができる。   In order to increase the number of unit cleaning nozzles in (1) from the center side toward the peripheral edge side, for example, the cleaning nozzle is divided into a plurality of sections in the radial direction of the substrate, and the annular (center) The unit cleaning nozzles are located in each area of the circle, with one at the center, two on the next concentric circle from the center, three on the next concentric circle, and so on. So that the number of. At this time, if the width of the annular region is made equal, the distance between the concentric circles in the circumferential direction becomes wider toward the peripheral portion, so that the width of the annular region is wider on the center side and narrower on the peripheral portion side. It is desirable to do. This method can be easily realized by adjusting the distance between adjacent unit cleaning nozzles when the unit cleaning nozzles are arranged in an open spiral shape in the present invention. The method (2) is a method in which the flow rate of each unit cleaning nozzle is increased on the peripheral side instead of changing the nozzle interval. For example, the hole diameter of the unit cleaning nozzle is sequentially directed toward the peripheral side. This can be achieved by increasing the size. The method (3) is a method of increasing the ozone concentration on the peripheral edge side instead of increasing the number of cleaning nozzles on the peripheral edge side. The method (4) is a combination of these methods. For example, by combining the methods (1) and (2), the number of unit cleaning nozzles (number of nozzle holes) can be reduced. .

なお、本発明においても、高濃度オゾン水の吐出された基板表面に、紫外線やエキシマレーザー光等の高エネルギー線を照射してオゾンの反応性を高めることも可能である。
さらに、一定以上のオゾン濃度が維持できる高濃度高温オゾン水製造装置から供給される高温のオゾン水、たとえば、70℃以上のオゾン水を使用して、フォトレジストとの反応速度を高めることも可能である。
In the present invention, it is also possible to increase the ozone reactivity by irradiating the surface of the substrate on which the high-concentration ozone water is discharged with high energy rays such as ultraviolet rays and excimer laser light.
Furthermore, it is also possible to increase the reaction rate with the photoresist by using high-temperature ozone water supplied from a high-concentration high-temperature ozone water production device that can maintain ozone concentration above a certain level, for example, ozone water at 70 ° C. or higher. It is.

本発明によれば、各単位洗浄ノズルから吐出される高濃度オゾン水の前記基板上における流れの方向の重なりが少なくなるよう、少なくとも周縁部に配置する各単位洗浄ノズルを支持台の周方向にずらして配置するので、オゾン水のフォトレジストへの反応効率を高めて均一にフォトレジストを除去することができ、薬品を使用しないフォトレジスト除去を実現することができる。   According to the present invention, the unit cleaning nozzles disposed at least in the peripheral portion are arranged in the circumferential direction of the support base so that the overlapping of the flow directions of the high-concentration ozone water discharged from the unit cleaning nozzles on the substrate is reduced. Since they are arranged in a shifted manner, the reaction efficiency of ozone water to the photoresist can be increased and the photoresist can be uniformly removed, and the removal of the photoresist without using chemicals can be realized.

本発明の一実施形態の構成を概略的に示す図である。It is a figure which shows schematically the structure of one Embodiment of this invention. 図1の実施形態の要部の構成を概念的に示す図である。It is a figure which shows notionally the structure of the principal part of embodiment of FIG. 図2の要部のIII−III線に沿う断面図である。It is sectional drawing which follows the III-III line of the principal part of FIG. 本発明の他の実施形態の要部の構成を概略的に示す拡大断面である。It is an expanded section which shows roughly the composition of the important section of other embodiments of the present invention. 本発明のさらに他の実施形態の要部の構成を概念的に示す図である。It is a figure which shows notionally the structure of the principal part of further another embodiment of this invention.

本発明に係るフォトレジスト除去装置を実施するための最良の形態を実施例に基づき図面を参照して、以下説明する。   The best mode for carrying out the photoresist removing apparatus according to the present invention will be described below with reference to the drawings based on the embodiments.

図1乃至図3は、本発明の一実施形態を説明するための図である。
図に示すように、この実施例のフォトレジスト除去装置1は、モータ2で駆動され水平面内を2000〜6000r.p.mで回転する支持台3と、高濃度オゾン水供給装置4と、支持アーム5に取り付けられて支持台3上に配置された洗浄ノズル7を備えている。
高濃度オゾン水供給装置4は、オゾナイザーで生成されたオゾンガスを供給するオゾンガス供給管4aからの濃度210g/mのオゾンガスを、超純水供給管4bから供給される超純水に溶解させて140ppmの濃度の高濃度オゾン水を調整し、この高濃度オゾン水を管路6を介して洗浄ノズル7に供給する。
洗浄ノズル7は、支持台3の回転中心部から周縁部にかけて、複数の単位洗浄ノズル7a,7a,……を回転方向に変位する開螺旋状に配列し、洗浄ノズル7の支持台3における回転方向後方に高圧空気を下方に向けて噴出するエアナイフ8が、支持台3の半径方向に配設されている。
複数の単位洗浄ノズル7a,7a,……の開螺旋状の曲線は、各単位洗浄ノズル7aから吐出される高濃度オゾン水が、基板9に接触して、ほぼ半径方向(径方向の遠心力と基板の回転力に由来する接線方向の力の合成力の方向)に飛散する際、それぞれの単位洗浄ノズル7aから吐出された高濃度オゾン水の流れが重ならないような曲線とされている。符号10は高濃度オゾン水の単位洗浄ノズル7aへ供給される高濃度オゾン水の開閉バルブ、Cは排液受けである。
この実施例のフォトレジスト除去装置によれば、周縁部に流れる高濃度オゾン水の水流が均一になり、フォトレジストとオゾンの反応生成物が周縁部に沈着しにくくなる。
さらに、この実施例では、洗浄ノズル7の回転方向後方に、エアナイフ8を配置して、各単位洗浄ノズル7aから高濃度オゾン水が吐出する前に、基板の表面に沈着したフォトレジストとオゾンの反応生成物を高圧空気で除去するようにしたので、周縁部に残存するフォトレジストも完全に除去することができる。
1 to 3 are diagrams for explaining an embodiment of the present invention.
As shown in the figure, the photoresist removing apparatus 1 of this embodiment is driven by a motor 2 and is operated in a horizontal plane between 2000 and 6000 r. p. A support base 3 that rotates at m, a high-concentration ozone water supply device 4, and a cleaning nozzle 7 that is attached to the support arm 5 and disposed on the support base 3 are provided.
The high-concentration ozone water supply device 4 dissolves ozone gas having a concentration of 210 g / m 3 from the ozone gas supply pipe 4a that supplies ozone gas generated by the ozonizer in ultrapure water supplied from the ultrapure water supply pipe 4b. A high-concentration ozone water having a concentration of 140 ppm is prepared, and this high-concentration ozone water is supplied to the cleaning nozzle 7 via the pipe 6.
In the cleaning nozzle 7, a plurality of unit cleaning nozzles 7a, 7a,... Are arranged in an open spiral shape that is displaced in the rotation direction from the rotation center portion to the peripheral portion of the support base 3, and the cleaning nozzle 7 rotates on the support base 3 An air knife 8 that jets high-pressure air downward in the direction rearward is disposed in the radial direction of the support 3.
The open spiral curve of the plurality of unit cleaning nozzles 7a, 7a,... Shows that the high-concentration ozone water discharged from each unit cleaning nozzle 7a comes into contact with the substrate 9 and is substantially in the radial direction (the radial centrifugal force). And the direction of the combined force of the tangential forces derived from the rotational force of the substrate) are curved so that the flows of the high-concentration ozone water discharged from the respective unit cleaning nozzles 7a do not overlap. Reference numeral 10 denotes an open / close valve for high-concentration ozone water supplied to the unit cleaning nozzle 7a for high-concentration ozone water, and C denotes a drain receiver.
According to the photoresist removing apparatus of this embodiment, the water flow of the high-concentration ozone water flowing in the peripheral portion becomes uniform, and the reaction product of the photoresist and ozone becomes difficult to deposit on the peripheral portion.
Furthermore, in this embodiment, an air knife 8 is arranged behind the cleaning nozzle 7 in the rotation direction, and before the high-concentration ozone water is discharged from each unit cleaning nozzle 7a, the photoresist and ozone deposited on the surface of the substrate. Since the reaction product is removed with high-pressure air, the photoresist remaining on the periphery can be completely removed.

この実施例の装置を用いて不要のフォトレジスト(ノボラック樹脂系フォトレジスト)が残存する300mmφのシリコン基板10に70ppm、70℃の高濃度オゾン水を5L/minで30秒間、3000rpmで回転しながら吐出させたところフォトレジストは完全に除去することができた。
これに対して、基板11の中心に配置した円筒管から高濃度オゾン水を同量吐出させるようにした従来のフォトレジスト除去装置では、30秒間の洗浄では、基板表面の周縁部部にフォトレジストの未剥離部分が残った。
Using the apparatus of this example, 70 ppm, 70 ° C. high-concentration ozone water was rotated at 3000 rpm for 30 seconds at 3000 rpm on a 300 mmφ silicon substrate 10 where unnecessary photoresist (novolak resin-based photoresist) remained. When discharged, the photoresist could be completely removed.
On the other hand, in the conventional photoresist removing apparatus in which the same amount of high-concentration ozone water is discharged from the cylindrical tube arranged at the center of the substrate 11, the photoresist is applied to the peripheral portion of the substrate surface in the cleaning for 30 seconds. The non-peeled part remained.

図4は、洗浄ノズル7の各単位洗浄ノズル7a,7a,……に超音波振動子を取り付けた実施形態の単位洗浄ノズル7aを示したものである。
同図において、単位洗浄ノズル7aは、高濃度オゾン水10と接して振動板11が配置され、その振動板11の上に超音波振動子12が配置されている。
なお、洗浄ノズル7以外の構成は、図1乃至図3と同一である。
そして、高濃度オゾン水実施形態では、高濃度オゾン水10を吐出口13から吐出するにあたって超音波振動子12に100kHz〜1MHzで30〜200Wの高周波の電圧を印加して超音波を発生させ、この超音波は吐出される高濃度オゾン水10を介して基板の洗浄面に振動エネルギーを伝播し、反応生成物の基板への沈着を防止するとともにフォトレジストの剥離を促進する。
なお、超音波振動子12は、全ての単位洗浄ノズル7aに設ける必要はなく、特に剥離が不完全になりがちな基板周縁部の単位洗浄ノズルにのみ設けるようにしてもよい。
FIG. 4 shows the unit cleaning nozzle 7a of the embodiment in which an ultrasonic vibrator is attached to each of the unit cleaning nozzles 7a, 7a,.
In the figure, the unit cleaning nozzle 7 a is in contact with the high-concentration ozone water 10, a vibration plate 11 is disposed, and the ultrasonic vibrator 12 is disposed on the vibration plate 11.
The configuration other than the cleaning nozzle 7 is the same as that shown in FIGS.
In the high-concentration ozone water embodiment, when discharging the high-concentration ozone water 10 from the discharge port 13, an ultrasonic wave is generated by applying a high-frequency voltage of 30 to 200 W at 100 kHz to 1 MHz to the ultrasonic vibrator 12, This ultrasonic wave propagates vibration energy to the cleaning surface of the substrate through the high-concentration ozone water 10 to be discharged, thereby preventing deposition of reaction products on the substrate and promoting peeling of the photoresist.
Note that the ultrasonic transducers 12 do not have to be provided in all the unit cleaning nozzles 7a, and may be provided only in the unit cleaning nozzles at the peripheral edge of the substrate where the peeling tends to be incomplete.

図5は、洗浄ノズル7の各単位洗浄ノズル7a,7a,……を360°の開螺旋状に配列した実施形態の洗浄ノズル7を模式的に示したものであり、洗浄ノズル7以外の部分は、エアナイフがないことを除いて実施例1に示した装置と同様である。
この実施例では、基板の周方向に均一に、かつ周縁部にいくほど高濃度オゾン水の吐出水量が多くなるので、より均一なフォトレジストの剥離が可能になる。
FIG. 5 schematically shows the cleaning nozzle 7 of the embodiment in which the unit cleaning nozzles 7a, 7a,... Of the cleaning nozzle 7 are arranged in an open spiral shape of 360 °. Is the same as the apparatus shown in Example 1 except that there is no air knife.
In this embodiment, the amount of water discharged from the high-concentration ozone water increases uniformly in the circumferential direction of the substrate and toward the peripheral portion, so that the photoresist can be stripped more uniformly.

なお、本発明は上記実施形態に示される複数の構成要素を適宜に組合せたり、また実施形態に示される全構成要素から幾つかの構成要素を削除する等、種々の変形が可能である。   It should be noted that the present invention can be modified in various ways, for example, by appropriately combining a plurality of constituent elements shown in the above embodiments, or by deleting some constituent elements from all the constituent elements shown in the embodiments.

1……フォトレジスト除去装置
2……モータ
3……回転する支持台
4……高濃度オゾン水供給装置
5……支持アーム
7……洗浄ノズル
7a……単位洗浄ノズル
8……エアナイフ
9……開閉バルブ
10……高濃度オゾン水
11……振動板
12……超音波振動子
13……吐出口
DESCRIPTION OF SYMBOLS 1 ... Photoresist removal device 2 ... Motor 3 ... Rotating support stand 4 ... High concentration ozone water supply device 5 ... Support arm 7 ... Cleaning nozzle 7a ... Unit cleaning nozzle 8 ... Air knife 9 ... Opening / closing valve 10 ... High-concentration ozone water 11 ... Vibration plate 12 ... Ultrasonic vibrator 13 ... Discharge port

Claims (5)

洗浄対象の基板を支持して回転する支持台と、前記支持台の上方に、注水口を下方に向けて配設された洗浄ノズルと、前記洗浄ノズルに高濃度オゾン水を供給する高濃度オゾン水供給装置とを備えたフォトレジスト除去装置であって、
前記洗浄ノズルは、前記支持台の回転中心からそれぞれ所定の距離をおいて配置された複数の単位洗浄ノズルからなり、
高濃度オゾン水の前記基板上における流れの方向の重なりが少なくなるよう前記基盤の半径方向に重ならない様に配置されていることを特徴とするフォトレジスト除去装置。
A support base that rotates while supporting a substrate to be cleaned, a cleaning nozzle disposed above the support base with a water injection port facing downward, and high-concentration ozone that supplies high-concentration ozone water to the cleaning nozzle A photoresist removal device comprising a water supply device,
The cleaning nozzle is composed of a plurality of unit cleaning nozzles arranged at a predetermined distance from the rotation center of the support base,
A photoresist removing apparatus, which is arranged so as not to overlap in the radial direction of the base so that the overlapping of the flow directions of the high-concentration ozone water on the substrate is reduced.
洗浄対象の基板を支持して回転する支持台と、前記支持台の上方に、注水口を下方に向けて配設された洗浄ノズルと、前記洗浄ノズルに高濃度オゾン水を供給する高濃度オゾン水供給装置とを備えたフォトレジスト除去装置であって、
前記洗浄ノズルは、前記支持台の回転中心からそれぞれ所定の距離をおいて配置された複数の単位洗浄ノズルからなり、少なくとも前記基板の周縁部における前記各単位洗浄ノズルが、前記各単位洗浄ノズルから吐出された高濃度オゾン水の前記基板上における流れの方向の重なりが少なくなるよう前記支持台の周方向にずらして配置されていることを特徴とする請求項1記載のフォトレジスト除去装置。
A support base that rotates while supporting a substrate to be cleaned, a cleaning nozzle disposed above the support base with a water injection port facing downward, and high-concentration ozone that supplies high-concentration ozone water to the cleaning nozzle A photoresist removal device comprising a water supply device,
The cleaning nozzle is composed of a plurality of unit cleaning nozzles arranged at a predetermined distance from the center of rotation of the support base, and at least each of the unit cleaning nozzles at the peripheral edge of the substrate is separated from each of the unit cleaning nozzles. 2. The photoresist removing apparatus according to claim 1, wherein the photoresist removing apparatus is arranged so as to be shifted in the circumferential direction of the support base so that the overlapping of the flow directions of the discharged high-concentration ozone water on the substrate is reduced.
前記複数の単位洗浄ノズルは、前記支持台の中心部側を基点とする開螺旋状に配置されていることを特徴とする請求項1記載の請求項1又は2記載のフォトレジスト除去装置。   3. The photoresist removing apparatus according to claim 1, wherein the plurality of unit cleaning nozzles are arranged in an open spiral shape with a center portion side of the support base as a base point. 4. 前記基板の洗浄前の領域へ、吐出された高濃度オゾン水が流入するのを防ぐエアナイフを配設してなることを特徴とする請求項1乃至3のいずれか1項記載のフォトレジスト除去装置。   4. The photoresist removing apparatus according to claim 1, wherein an air knife for preventing the discharged high-concentration ozone water from flowing into the region before cleaning of the substrate is disposed. . 前記洗浄ノズルから吐出される高濃度オゾン水に超音波振動を伝播させる超音波振動素子を有することを特徴とする請求項1乃至3のいずれか1項記載のフォトレジスト除去装置。   4. The photoresist removing apparatus according to claim 1, further comprising an ultrasonic vibration element that propagates ultrasonic vibration to the high-concentration ozone water discharged from the cleaning nozzle.
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