JP2010228965A5 - - Google Patents
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- JP2010228965A5 JP2010228965A5 JP2009078193A JP2009078193A JP2010228965A5 JP 2010228965 A5 JP2010228965 A5 JP 2010228965A5 JP 2009078193 A JP2009078193 A JP 2009078193A JP 2009078193 A JP2009078193 A JP 2009078193A JP 2010228965 A5 JP2010228965 A5 JP 2010228965A5
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- resistant member
- corrosion
- aluminum
- heat
- aluminum nitride
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Description
このような窒化アルミニウムからなる被覆膜は、例えば、化学気相成長法により成膜されたCVD膜であり、該成膜はアルミニウムの有機金属化合物とアンモニアを600℃〜1200℃の温度範囲下で反応させて得られたものである。 Such a coating film made of aluminum nitride is, for example, a CVD film formed by a chemical vapor deposition method, and the film formation is performed in a temperature range of 600 ° C. to 1200 ° C. with an organometallic compound of aluminum and ammonia. It was obtained by reacting with
また、窒化アルミニウムからなるCVD被覆膜は、アルミニウムの有機金属化合物とアンモニアを600℃〜1200℃の温度範囲下で反応させて得ることとしてもよい。 Further, the CVD coating film made of aluminum nitride may be obtained by reacting an organometallic compound of aluminum and ammonia in a temperature range of 600 ° C to 1200 ° C.
窒化アルミニウム膜103は、化学気相成長法により成膜されたCVD膜であり、アルミニウム含有有機金属化合物や塩化アルミニウムなどとアンモニアを600℃〜1200℃の温度範囲下で反応させて得られたもので、その相対密度は50%以上98%未満であり、硬度は2GPa以上10GPa以下である。 The aluminum nitride film 103 is a CVD film formed by a chemical vapor deposition method, and is obtained by reacting an aluminum-containing organometallic compound or aluminum chloride with ammonia in a temperature range of 600 ° C. to 1200 ° C. The relative density is 50% or more and less than 98%, and the hardness is 2 GPa or more and 10 GPa or less.
反応温度は、好ましい成膜温度を探るため、550℃から1250℃の温度範囲で条件設定し、相対密度と硬度(硬さ)が異なる窒化アルミニウム膜を厚み100μmで成膜させて、窒化アルミ焼結体の表面全体を被覆した。 In order to find a preferable film formation temperature, the reaction temperature is set in a temperature range of 550 ° C. to 1250 ° C., an aluminum nitride film having a relative density and hardness (hardness) different from each other is formed to a thickness of 100 μm, The entire surface of the knot was coated.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009078193A JP2010228965A (en) | 2009-03-27 | 2009-03-27 | Corrosion resistant member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009078193A JP2010228965A (en) | 2009-03-27 | 2009-03-27 | Corrosion resistant member |
Publications (2)
Publication Number | Publication Date |
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JP2010228965A JP2010228965A (en) | 2010-10-14 |
JP2010228965A5 true JP2010228965A5 (en) | 2010-11-25 |
Family
ID=43045140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009078193A Pending JP2010228965A (en) | 2009-03-27 | 2009-03-27 | Corrosion resistant member |
Country Status (1)
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JP (1) | JP2010228965A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5039120B2 (en) * | 2009-12-07 | 2012-10-03 | 東京エレクトロン株式会社 | Alumina member for plasma processing apparatus and method for manufacturing alumina member for plasma processing apparatus |
JP2012096931A (en) * | 2010-10-29 | 2012-05-24 | Shin-Etsu Chemical Co Ltd | Corrosion-resistant member coated with aluminum nitride, and method for producing the same |
JP5527821B2 (en) * | 2010-12-03 | 2014-06-25 | 信越化学工業株式会社 | Corrosion resistant material |
JP5876259B2 (en) * | 2011-04-14 | 2016-03-02 | 信越化学工業株式会社 | Method for manufacturing member covered with aluminum nitride film |
KR102519544B1 (en) | 2017-12-07 | 2023-04-07 | 삼성전자주식회사 | Wafer loading apparatus and film forming apparatus |
CN114197038B (en) * | 2021-12-10 | 2024-06-07 | 中国电子科技集团公司第四十六研究所 | Protection device for improving ultraviolet transmittance of aluminum nitride epitaxial layer and use method |
JP2023170163A (en) * | 2022-05-18 | 2023-12-01 | 株式会社フェローテックマテリアルテクノロジーズ | wafer support |
JP2024110836A (en) * | 2023-02-03 | 2024-08-16 | 株式会社フェローテックマテリアルテクノロジーズ | Wafer Support |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61163277A (en) * | 1985-01-11 | 1986-07-23 | Nec Corp | Synthesizing method of aln thin film |
JPS63297990A (en) * | 1987-05-29 | 1988-12-05 | 東芝セラミックス株式会社 | Member for low melting-point metal melting holding furnace |
JPS6452069A (en) * | 1987-08-21 | 1989-02-28 | Asahi Chemical Ind | Method for synthesizing aluminum nitride film at high speed |
JP2679798B2 (en) * | 1987-11-13 | 1997-11-19 | 東芝セラミックス株式会社 | Manufacturing method of aluminum nitride |
JPH0674502B2 (en) * | 1990-03-29 | 1994-09-21 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JPH0786379A (en) * | 1993-09-13 | 1995-03-31 | Kyocera Corp | Semiconductor manufacturing suscepter |
JP3767719B2 (en) * | 1997-10-30 | 2006-04-19 | 信越化学工業株式会社 | Electrostatic chuck |
JP2002231645A (en) * | 2001-02-02 | 2002-08-16 | Ngk Insulators Ltd | Method of manufacturing nitride semiconductor film |
JP4563230B2 (en) * | 2005-03-28 | 2010-10-13 | 昭和電工株式会社 | Method for manufacturing AlGaN substrate |
JP2007016272A (en) * | 2005-07-06 | 2007-01-25 | Ge Speciality Materials Japan Kk | Protective film covered on substrate, and its manufacturing method |
JP4823856B2 (en) * | 2006-11-01 | 2011-11-24 | 国立大学法人三重大学 | Method for producing AlN group III nitride single crystal thick film |
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2009
- 2009-03-27 JP JP2009078193A patent/JP2010228965A/en active Pending
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