JP2010165807A - Method of manufacturing insulating circuit board, insulating circuit board, and substrate for power module - Google Patents

Method of manufacturing insulating circuit board, insulating circuit board, and substrate for power module Download PDF

Info

Publication number
JP2010165807A
JP2010165807A JP2009006172A JP2009006172A JP2010165807A JP 2010165807 A JP2010165807 A JP 2010165807A JP 2009006172 A JP2009006172 A JP 2009006172A JP 2009006172 A JP2009006172 A JP 2009006172A JP 2010165807 A JP2010165807 A JP 2010165807A
Authority
JP
Japan
Prior art keywords
circuit board
metal
brazing
ceramic substrate
peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009006172A
Other languages
Japanese (ja)
Other versions
JP5141566B2 (en
Inventor
Shinsuke Aoki
Toshiyuki Nagase
Yoshiyuki Nagatomo
義幸 長友
敏之 長瀬
慎介 青木
Original Assignee
Mitsubishi Materials Corp
三菱マテリアル株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp, 三菱マテリアル株式会社 filed Critical Mitsubishi Materials Corp
Priority to JP2009006172A priority Critical patent/JP5141566B2/en
Publication of JP2010165807A publication Critical patent/JP2010165807A/en
Application granted granted Critical
Publication of JP5141566B2 publication Critical patent/JP5141566B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An insulating circuit board manufacturing method, an insulating circuit board, and a power module board are provided, in which a brazing material does not adhere to a circuit surface and a metal plate and a ceramic substrate are securely bonded.
In a method for manufacturing an insulating circuit board in which a metal circuit board is brazed and joined to the surface of a ceramic substrate, the metal circuit board is laminated on the surface of the ceramic substrate via a brazing material. When pressurizing in the laminating direction, the pressure at the peripheral portion of the metal circuit board 7 is made larger than that at the central portion inside the peripheral portion.
[Selection] Figure 3

Description

  The present invention relates to an insulating circuit board manufacturing method and an insulating circuit board, and more particularly to a technique suitable for use in a power module substrate used in a semiconductor device that controls a large current and a high voltage.

In general, a power module for supplying power among semiconductor elements has a relatively high calorific value. As this power module substrate, for example, as shown in Patent Document 1, AlN, Al 2 O 3 , Si 3 N 4. A metal plate such as an aluminum plate joined to a ceramic substrate made of SiC or the like via a brazing material such as an Al-Si type is used. This metal plate becomes a circuit layer by forming a circuit having a desired pattern by an etching process in a later step. After etching, an electronic component (power element such as a semiconductor chip) is mounted on the surface of the circuit layer via a solder material to form a power module.

  In addition, as shown in Patent Document 2, for example, this metal plate is a molten brazing material by interposing a foil-like brazing material between the ceramic substrate and the metal plate and pressing in the stacking direction in a high temperature state. To be bonded to the ceramic substrate.

JP 2004-356502 A JP 2007-53349 A

When the metal plate is joined to the ceramic substrate as described above, as shown in Patent Document 2, the molten brazing material adheres to the surface of the metal plate via the ceramic substrate and the side surface of the metal plate, and this surface is There is a problem that the adhesiveness of the bonding wire of the electronic component that is altered and then fixed is impaired. In order to prevent the brazing material from surplus and protruding, it is conceivable to reduce the amount of brazing material by reducing the thickness or area of the foil brazing material.
However, when the amount of the brazing material is reduced, a portion where the brazing material is insufficient between the metal plate and the ceramic substrate may be generated, or the joint portion may be peeled off due to warpage of the ceramic substrate. There is a possibility that problems such as peeling off of the formed circuit layer may occur. Further, the brazing material does not adhere to the entire surface of the metal plate, and there is a possibility that the metal plate cannot be reliably bonded to the ceramic substrate. Furthermore, if the bonding is not sufficient, peeling may occur under thermal cycle conditions that repeat temperature changes.

  The present invention has been made in view of such circumstances, and there is no adhesion of brazing material to the circuit surface, and a method of manufacturing an insulated circuit board and an insulated circuit in which a metal plate and a ceramic substrate are reliably bonded. An object is to provide a substrate and a substrate for a power module.

The method for manufacturing an insulated circuit board according to the present invention is a method for manufacturing an insulated circuit board in which a metal circuit board is brazed and joined to the surface of a ceramic substrate, and the metal circuit board is placed on the surface of the ceramic substrate via a brazing material. When laminating and pressurizing them in the laminating direction, the pressure at the peripheral portion of the metal circuit board is made larger than the central portion inside the peripheral portion.
That is, by setting the peripheral edge of the metal circuit board to be larger than the central part with respect to the pressure at the time of brazing and joining, the resistance of the brazing material to pass between the peripheral edge of the metal circuit board and the ceramic substrate increases. The brazing effect of the material prevents the brazing material from protruding from the center of the metal circuit board to the outside via the peripheral edge.

In the method for manufacturing an insulated circuit board according to the present invention, the pressure may be 294 kPa or more and less than 981 kPa at the periphery of the metal circuit board, and 98 kPa or more and less than 294 kPa at the center.
Moreover, it is preferable that the said peripheral part is an area | region from the periphery of the said metal circuit board to 2 mm. In this case, the peripheral edge of the metal circuit board tends to be insufficiently bonded because it is strongly pressed and brazing material is reduced. Therefore, by setting the pressure range to be within 2 mm, it is possible to prevent the pressure range from proceeding to 2 mm or more even in the event of peeling.

The insulated circuit board according to the present invention is an insulated circuit board in which a metal circuit board is brazed and joined to the surface of a ceramic board, and a brazing material trace layer formed by joining the ceramic board and the metal circuit board is located in the center of the metal circuit board. It is characterized in that it is formed thinner at the peripheral part than at the part.
That is, in this insulated circuit board, the brazing material trace layer is formed thin as a result of increasing the pressurizing force at the peripheral portion. Thus, adhesion of the brazing material to the circuit surface of the metal circuit board surface can be prevented.
Here, the trace layer of brazing material appears at a position entering the metal circuit board side from the bonding interface between the ceramic substrate and the metal circuit board, and there are crystal grains having an orientation different from the crystal orientation of the base material of the metal circuit board. Is a layer.

In the insulated circuit board of the present invention, it is preferable that a thickness of the trace of the brazing material is less than 5 μm at a peripheral edge portion of the metal circuit board and is not less than 5 μm and less than 20 μm at the central portion.
Moreover, it is preferable that the said peripheral part is an area | region from the periphery of the said metal circuit board to 2 mm.

Furthermore, the present invention is a power module substrate using these insulated circuit boards, and a heat sink is attached to the back surface of the ceramic substrate via a heat radiating metal plate or not via the heat radiating metal plate. It is characterized by that.
This power module substrate is firmly bonded between the ceramic substrate and the metal circuit board, so the heat sink on the opposite side prevents the occurrence of delamination even when used under severe thermal cycling conditions. can do.

  According to the present invention, since the brazing material is prevented from protruding from the peripheral edge of the metal circuit board, there is no adhesion of the brazing material to the circuit surface, and the metal circuit board and the ceramic substrate are reliably bonded, and the thermal cycle environment Even when used under severe conditions, peeling can be prevented and a highly reliable insulating substrate can be provided.

It is a longitudinal cross-sectional view which shows the example of whole structure of the power module manufactured using the insulated substrate which concerns on this invention. It is the expanded sectional view which showed typically the peripheral part vicinity of the metal circuit board of the insulated substrate in FIG. It is a longitudinal cross-sectional view which shows the 1st example of the pressurization apparatus used for the manufacturing method which concerns on this invention. It is a longitudinal cross-sectional view which shows the 2nd example of a pressurization apparatus. It is a figure for explanation about evaluation of this embodiment, (a) is a sectional view explaining the amount of bleed out of brazing material, and (b) is a sectional view which joined an aluminum plate to a metal plate for heat dissipation. It is a longitudinal cross-sectional view which shows the 3rd example of a pressurization apparatus. It is a longitudinal cross-sectional view which shows the 4th example of a pressurization apparatus.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
FIG. 1 shows an overall configuration of a power module using a power module substrate according to the present invention. The power module 1 shown in FIG. 1 includes a power module substrate 3 having an insulating circuit substrate 2 and an electronic component 4 such as a semiconductor chip mounted on the surface of the power module substrate 3.

The power module substrate 3 includes an insulated circuit board 2 on which electronic components 4 are mounted and a heat sink 5 bonded to the back surface of the insulated circuit board 2. The insulated circuit board 2 has a metal circuit board 7 on which the electronic component 4 is mounted on the surface of the ceramic substrate 6, and a heat radiation layer metal plate 8 is laminated on the back surface of the ceramic substrate 6. The heat sink 5 is attached to 8.
In this case, the ceramic substrate 6 has a rectangular shape using, for example, a nitride ceramic such as AlN (aluminum nitride) or Si 3 N 4 (silicon nitride) or an oxide ceramic such as Al 2 O 3 (alumina) as a base material. Is formed. The metal circuit board 7 is made of pure aluminum or an aluminum alloy, and is formed into an outer shape of a circuit pattern by pressing. The heat radiation layer metal plate 8 is formed in a rectangular shape slightly smaller than the ceramic substrate 6 with pure aluminum having a purity of 99.0 wt% or more.

  The ceramic substrate 6, the metal circuit board 7, and the heat dissipation layer metal plate 8 are joined to each other by brazing, and the brazing material may be Al—Si, Al—Ge, or Al—Cu. Al-Mg type or Al-Mn type is used. The thickness of the brazing material is preferably 8 to 30 μm. When the thickness of the brazing material is less than 8 μm, an unbonded portion in the initial bonded state may occur. Further, for example, peeling may occur in a cooling cycle test at −40 to 105 ° C., and the bonding reliability is lowered. On the other hand, when the thickness of the brazing material is larger than 30 μm, the surplus brazing material at the time of joining is formed on the circuit terminal in the shape of a bump, and there is a risk of dimensional defects.

In the joint portion between the ceramic substrate 6 and the metal circuit board 7 and the heat radiation layer metal plate 8, the metal interface board 6 side or the heat radiation layer metal plate 7 side from the joining interface is shown in FIG. As shown, a brazing material trace layer 11 in which crystal grains having an orientation different from the crystal orientation of the base material of the metal circuit board 6 or the metal plate 7 for heat radiation layer is present is formed. In FIG. 2, the joint portion between the metal circuit board 7 and the ceramic substrate 6 is illustrated, but the joint portion between the heat radiation layer metal plate 8 and the ceramic substrate 6 is the same. The brazing material trace layer 11 is formed almost entirely on the bonding interface between the metal circuit board 7 (or the heat dissipation layer metal plate 8) and the ceramic substrate 6, but the metal circuit board 7 (or the heat dissipation layer metal plate). The peripheral edge A of 8) is formed thinner than the central part B. Specifically, the peripheral portion A is an area from the peripheral edge of the metal circuit plate 7 (or dissipating layer metal plate 8) to 2 mm, the brazing material traces layer 11, the thickness t 1 at the peripheral portion A is less than 5 [mu] m, the thickness t 2 at the central portion B is less than 20μm more than 5 [mu] m.
In this case, the brazing material trace layer 11 is formed when crystal grains having an orientation different from the crystal orientation of the base material exist in a range of at least 40% or more of the bonding interface.

The brazing material trace layer 11 can be confirmed by measuring the crystal orientation in the vicinity of the bonding interface based on the Electron Back Scatter Diffraction Patterns method (hereinafter referred to as EBSP method). it can. In this EBSP method, an EBSP detector is connected to an SEM (scanning electron microscope), and the orientation of a diffraction image (EBSP) of each crystal generated when a sample surface is irradiated with a focused electron beam is analyzed. This is a method of measuring the crystal orientation of the material from the position information of the measurement point, and the measurement result is shown as a crystal orientation map (IPF (Inverse Pole Figure) Map). From this crystal orientation map, it is possible to confirm a region (a brazing material trace layer) where crystal grains having an orientation different from the crystal orientation of the base material are present.
A plating film (not shown) is formed on the surface of the metal circuit board 7. Nickel is suitable as a material for the plating film, and Ni-1 to 13 wt% P and Ni-0.5 wt% B are used when electroless plating is used, and pure Ni is used when electrolytic plating is used.

Then, the electronic component 4 is joined onto the metal circuit board 7 by a solder material such as Sn—Ag—Cu, Zn—Al, or Pb—Sn. Reference numeral 12 in the figure indicates the solder joint layer. The electronic component 4 and the terminal portion of the metal circuit board 7 are connected by a bonding wire (not shown) made of aluminum.
On the other hand, the heat sink 5 is formed by extrusion molding of an aluminum alloy, and is formed with a number of flow paths 13 for circulating cooling water along its length direction. Joined by brazing, soldering, bolts, etc.

Next, the manufacturing method of the insulated circuit board 2 in the power module substrate 3 configured as described above will be described.
First, the ceramic substrate 6, the metal circuit board 7, and the heat radiation layer metal plate 8 are laminated with the brazing material 15 disposed therebetween (see FIG. 3). This brazing material 15 is formed at the same time as the metal circuit board 7 and the heat radiation layer metal plate 8 are stamped and formed by pressing, and is formed into a metal flat plate for the metal circuit board 7 and the heat radiation layer metal plate 8. A brazing filler metal foil is pasted and the metal flat plate and the brazing filler metal foil are simultaneously punched out by press working, whereby the brazing filler metal foil is also stamped and formed on the outer shape of the metal circuit board 7 and the metal plate 8 for the heat radiation layer.

Next, the laminated body of the ceramic substrate 6, the metal circuit board 7, and the heat dissipation layer metal plate 8 is pressed by the pressurizing device 21.
The pressurizing device 21 is provided with a base 22 on which a laminated body is placed and a pressurizing plate 23 parallel to the base 22, and a pressurizing means (not shown) for pressurizing them in the facing direction. It has been configured. The base 22 and the pressure plate 23 are configured such that sheet members 25 and 26 are interposed between two carbon plates 24, respectively. These sheet members 25 and 26 are formed of an elastic material such as a graphite sheet, for example. The sheet member 25 provided on the pressure plate 23 is formed in an annular shape along the peripheral edge of the metal circuit board 7 and is provided on the base 22. The member 26 is formed in an annular shape along the peripheral edge of the heat dissipation layer metal plate 8. The widths of the sheet members 25 and 26 are such that when the sheet members 25 and 26 are disposed along the periphery of the metal circuit board 7 or the heat dissipation layer metal plate 8, the metal circuit board 7 or the heat dissipation layer metal plate 8. It is set as the dimension which can cover the area | region of 2 mm inside from the periphery.

These sheet members 25 and 26 are arranged at positions corresponding to the periphery of the metal circuit board 7 or the metal plate 8 for the heat radiation layer, and the ceramics as shown by the arrows in FIG. 3 between the base 22 and the pressure plate 23. When the laminated body of the substrate 6, the metal circuit board 7, and the heat dissipation layer metal plate 8 is pressed, the peripheral portions of the metal circuit board 7 and the heat dissipation layer metal plate 8 are interposed through sheet members 25 and 26. A large pressing force is applied, and a pressing force that is relaxed by the elastic action of the carbon plate 24 is applied to the central portion inside the sheet members 25 and 26. As a result, in the peripheral portion where the sheet members 25 and 26 are disposed, The pressing force per area is set to be larger than that of the central portion where the sheet members 25 and 26 are not arranged. Specifically, the pressure in the region 2 mm inward from the peripheral edge of the metal circuit board 7 or the heat radiation layer metal plate 8 on which the sheet members 25 and 26 are disposed is set to 294 kPa or more and less than 981 kPa, and the central portion inside the region Is set to 98 kPa or more and less than 294 kPa. The pressure is adjusted by the material, elastic coefficient, thickness, and the like of the carbon plate 24 and the sheet members 25 and 26.
And in the state pressurized in this way, it arrange | positions in the heating furnace (not shown) with this pressurization apparatus 21, and is 640 degreeC or more and 655 degrees C or less, for example in inert gas atmosphere, reducing gas atmosphere, or vacuum atmosphere. The brazing material 15 is melted and brazed by heating at a temperature of 1 minute to 60 minutes.

  Thus, by brazing the metal circuit board 7 and the heat dissipation layer metal plate 8 at a peripheral portion with a pressure greater than that of the inner central portion, the molten brazing material is used for the metal circuit board 7 or the heat dissipation layer. The resistance passing between the peripheral portion of the metal plate 8 and the ceramic substrate 6 is increased, and as a result, the brazing material is exposed to the outside through the peripheral portion from the central portion of the metal circuit plate 7 and the metal plate 8 for heat dissipation layer. It is prevented from protruding.

  Therefore, the insulating circuit board 2 manufactured in this way has no protrusion of the brazing material from the joint between the ceramic substrate 6, the metal circuit board 7, and the metal plate 8 for the heat dissipation layer. The brazing material does not wrap around and the surface is not deteriorated (so-called brazing), the bonding wires of the electronic component 4 mounted thereon can be securely bonded, and the connection reliability is improved.

  On the other hand, FIG. 4 shows a second example of the pressure device. The pressurizing device 31 is configured to pressurize the peripheral portion of the metal circuit board 7 or the metal plate 8 for heat radiation layer and the inner central portion thereof separately. That is, both the base 32 and the pressure plate 33 are formed of a carbon plate, but annular peripheral edge pressure members 32A and 33A are provided at portions that contact the peripheral edge of the metal circuit board 7 or the heat radiation layer metal plate 8. The central portion pressing members 32B and 33B are disposed on the inner side. Peripheral part pressurizing means (not shown) for pressurizing both peripheral part pressurizing members 32A and 33A and central part pressurizing means (not shown) for pressurizing the central part pressurizing members 32B and 33B are provided. ing.

When the insulating circuit board 2 is brazed using the pressurizing device 31, the peripheral edge pressing members 32A and 33A are brought into contact with the peripheral edge portions of the metal circuit board 7 and the heat radiation layer metal plate 8, and the peripheral edge portions thereof. Different pressurizing forces are applied to the pressing members 32A and 33A and the central pressing members 32B and 33B by different pressing means. The specific pressure is the same as in the case of the first example of FIG. 3, and the pressure in the region 2 mm inward from the peripheral edge of the metal circuit board 7 or the metal plate 8 for the heat dissipation layer is 294 kPa or more and less than 981 kPa. The pressure at the inner central part is set to 98 kPa or more and less than 294 kPa.
Also in this pressurizing device 31, as with the pressurizing device 21 in FIG. 3, the pressure at the peripheral edge of the metal circuit board 7 and the metal plate 8 for heat radiation layer can be made larger than the central part inside it, The molten brazing material is prevented from protruding through the peripheral edge.

Next, in order to evaluate the manufacturing method of the present embodiment, the two types of pressurizing devices 21 and 31 and the laminate of the ceramic substrate 6, the metal circuit board 7, and the heat dissipation layer metal plate 8 are evenly arranged in the plane direction. Using a conventional pressurizing apparatus that pressurizes at a high pressure, the amount of the solder material to be spotted onto the surface of the metal circuit board 7 when brazed was measured. FIG. 5A shows a state in which the brazing material W has wrapped around the surface of the metal circuit board 7, and the distance L (maximum part) from the periphery of the metal circuit board 7 is the amount of smearing. Further, as shown in FIG. 5 (b), an aluminum plate 35 (A6063 material) having a thickness of 5 mm is joined to the heat radiating metal plate 8 as a heat sink by brazing, and the temperature is increased from −40 ° C. to 105 ° C. Increased in minutes, held at 105 ° C. for 15 minutes, then lowered from 105 ° C. to −40 ° C. in 10 minutes and held at −40 ° C. for 15 minutes. Then, the bonding defect rate between the ceramic substrate 6 and the heat radiation layer metal plate 8 was measured by ultrasonic flaw detection. Bonding defect rate is measured by measuring the area ratio of the non-bonded portion in the entire bonding surface, where the ultrasonic defect is equivalent to a circle and a portion that is not bonded by 1mmφ or more (non-bonded portion) is recognized as a bonding defect. did. In either case, aluminum nitride was used as the ceramic substrate 6 and an Al—Si brazing material was used as the brazing material, and brazing was performed by heating at 635 ° C. for 1 minute in a vacuum atmosphere.
The results are shown in Table 1.

In Table 1, the evaluation was evaluated as x when the defect rate after 3000 cooling cycles was 35% or more, Δ as 25% or more, ○ as 15% or more, and ◎ as less than 15%. The edge part deformation | transformation of the other column shows that the bump by the excessive brazing material generate | occur | produced.
Moreover, even when the apparatus of this embodiment was used, what was brazed without making the pressure of a peripheral part larger than the pressure of a center part was made into the comparative example.
As can be seen from Table 1, in the case of the present example, no spotting of the brazing material on the surface of the metal circuit board was observed, whereas in the case of the comparative example, part of the spotting was recognized. It was. In addition, in the case of the present example, the occurrence of bonding defects is small even after 3000 cooling cycles in the case of this example, but in the case of the comparative example, the bonding defect rate after 1000 times depending on the bonding conditions. The defect rate is greatly increased at 3000 times.

As mentioned above, although embodiment of this invention was explained in full detail, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.
For example, the pressurizing device may have a structure shown in FIG. 6 or FIG. The pressurizing device 41 shown in FIG. 6 omits the carbon plate 24 in contact with the metal circuit plate 7 or the metal plate 8 for the heat radiation layer from the pressurizing device 21 shown in FIG. The circuit board 7 or the heat radiation layer metal plate 8 is pressurized. In this case, the central portion of the metal circuit board 7 and the heat dissipation layer metal plate 8 is pressurized by the applied pressure acting on the peripheral edge thereof being transmitted through the metal circuit board 7 or the heat dissipation layer metal plate 8, and the metal Due to the elasticity of the circuit board 7 or the metal plate 8 for heat dissipation layer, the pressure at the peripheral edge becomes larger than that at the center. Further, in the pressing device 51 shown in FIG. 7, protruding portions 52 a and 53 a that are in contact with the peripheral portion of the metal circuit plate 7 or the heat dissipation layer metal plate 8 are integrally protruded on the opposing surfaces of the base 52 and the pressing plate 53. The projecting portions 52a and 53a are formed so that the peripheral portion of the metal circuit board 7 or the heat radiation layer metal plate 8 is pressurized. Also in this case, as in the case of FIG. 6, the pressure at the peripheral edge portion is larger than that at the central portion.

In the case where a heat sink is provided, in the embodiment, the heat sink is attached to the ceramic substrate via the heat dissipation layer metal plate. However, the heat sink may be directly attached to the ceramic substrate without using the heat dissipation layer metal plate. In that case, it is fixed by brazing, soldering, bolts or the like.
Furthermore, the brazing material is applied to the metal circuit board and the heat dissipation layer metal plate, and is integrally molded. However, the brazing material is formed separately from the metal circuit board or the heat dissipation layer metal plate, and these are laminated. It is good also as a structure.

DESCRIPTION OF SYMBOLS 1 Power module 2 Insulated circuit board 3 Power module board 4 Electronic component 5 Heat sink 6 Ceramic substrate 7 Metal circuit board 8 Metal plate for heat radiation layer 11 Brazing material trace layer 12 Solder joint layer 13 Flow path 15 Brazing material 21 Pressure device 22 Base 23 Pressure plate 25, 26 Sheet member 41 Pressure device 42 Base 43 Pressure plate 51 Pressure device 52 Base 53 Pressure plate

Claims (7)

  1. In a method for manufacturing an insulating circuit board in which a metal circuit board is brazed and bonded to the surface of a ceramic substrate,
    When laminating the metal circuit board on the surface of the ceramic substrate via a brazing material and pressurizing them in the laminating direction, the pressure of the peripheral part of the metal circuit board is compared with the central part inside the peripheral part. A method of manufacturing an insulating circuit board, wherein the insulating circuit board is enlarged.
  2.   2. The method for manufacturing an insulating circuit board according to claim 1, wherein the pressure is 294 kPa or more and less than 981 kPa at a peripheral portion of the metal circuit board and 98 kPa or more and less than 294 kPa at the central portion.
  3.   3. The method for manufacturing an insulated circuit board according to claim 1, wherein the peripheral portion is a region extending from the peripheral edge of the metal circuit board to 2 mm.
  4. In an insulated circuit board in which a metal circuit board is brazed and joined to the surface of a ceramic substrate,
    An insulating circuit board, wherein a trace layer of brazing material formed by joining a ceramic substrate and a metal circuit board is formed thinner at a peripheral edge than at a central part of the metal circuit board.
  5. 5. The insulating circuit board according to claim 4, wherein a thickness of the brazing material trace layer is less than 5 μm at a peripheral portion of the metal circuit board and is not less than 5 μm and less than 20 μm at the central portion.
  6.   6. The insulated circuit board according to claim 4, wherein the peripheral portion is a region extending from the peripheral edge of the metal circuit board to 2 mm.
  7. A power module substrate using the insulated circuit board according to any one of claims 4 to 6,
    A power module substrate, wherein a heat sink is attached to the back surface of the ceramic substrate via a heat radiating metal plate or without the heat radiating metal plate.
JP2009006172A 2009-01-14 2009-01-14 Insulated circuit board manufacturing method, insulated circuit board, and power module substrate Active JP5141566B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009006172A JP5141566B2 (en) 2009-01-14 2009-01-14 Insulated circuit board manufacturing method, insulated circuit board, and power module substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009006172A JP5141566B2 (en) 2009-01-14 2009-01-14 Insulated circuit board manufacturing method, insulated circuit board, and power module substrate

Publications (2)

Publication Number Publication Date
JP2010165807A true JP2010165807A (en) 2010-07-29
JP5141566B2 JP5141566B2 (en) 2013-02-13

Family

ID=42581766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009006172A Active JP5141566B2 (en) 2009-01-14 2009-01-14 Insulated circuit board manufacturing method, insulated circuit board, and power module substrate

Country Status (1)

Country Link
JP (1) JP5141566B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238932A (en) * 2009-03-31 2010-10-21 Mitsubishi Materials Corp Power module substrate, power module substrate having heat sink, and method of manufacturing power module
KR101097524B1 (en) 2010-09-06 2011-12-22 삼성전기주식회사 Manufacturing method of multi-layer circuit board
JP2014192478A (en) * 2013-03-28 2014-10-06 Mitsubishi Materials Corp Substrate for power module and method of manufacturing the same
JP2014220541A (en) * 2014-08-28 2014-11-20 三菱マテリアル株式会社 Method for manufacturing substrate for power module
JP2016063145A (en) * 2014-09-19 2016-04-25 三菱マテリアル株式会社 Manufacturing apparatus and manufacturing method of substrate for power module with heatsink

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327737A (en) * 2003-04-24 2004-11-18 Kyocera Corp Compound substrate and manufacturing method therefor
WO2007036999A1 (en) * 2005-09-28 2007-04-05 Matsushita Electric Industrial Co., Ltd. Circuit board connection structure, circuit board connection method, and press tool for circuit board connection
JP2008181940A (en) * 2007-01-23 2008-08-07 Mitsubishi Materials Corp Production process of substrate for power module and substrate for power module and power module
JP2008311296A (en) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp Substrate for power module

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327737A (en) * 2003-04-24 2004-11-18 Kyocera Corp Compound substrate and manufacturing method therefor
WO2007036999A1 (en) * 2005-09-28 2007-04-05 Matsushita Electric Industrial Co., Ltd. Circuit board connection structure, circuit board connection method, and press tool for circuit board connection
JP2008181940A (en) * 2007-01-23 2008-08-07 Mitsubishi Materials Corp Production process of substrate for power module and substrate for power module and power module
JP2008311296A (en) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp Substrate for power module

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238932A (en) * 2009-03-31 2010-10-21 Mitsubishi Materials Corp Power module substrate, power module substrate having heat sink, and method of manufacturing power module
KR101097524B1 (en) 2010-09-06 2011-12-22 삼성전기주식회사 Manufacturing method of multi-layer circuit board
JP2014192478A (en) * 2013-03-28 2014-10-06 Mitsubishi Materials Corp Substrate for power module and method of manufacturing the same
JP2014220541A (en) * 2014-08-28 2014-11-20 三菱マテリアル株式会社 Method for manufacturing substrate for power module
JP2016063145A (en) * 2014-09-19 2016-04-25 三菱マテリアル株式会社 Manufacturing apparatus and manufacturing method of substrate for power module with heatsink

Also Published As

Publication number Publication date
JP5141566B2 (en) 2013-02-13

Similar Documents

Publication Publication Date Title
JP6400788B2 (en) Power module manufacturing method
JP5613914B2 (en) Power module substrate
JP6125691B2 (en) Semiconductor device
JP5656962B2 (en) Electronic component module
JP6171622B2 (en) Power module substrate, power module, and method of manufacturing power module substrate
US6653736B2 (en) Multilayer flexible wiring boards
KR101486176B1 (en) Cladding material for insulated substrates
CN105027277B (en) The manufacture method of power module substrate
US6912130B2 (en) Combined member of aluminum-ceramics
WO2014115677A1 (en) Power module substrate, power module substrate with heat sink, and power module with heat sink
JP4015023B2 (en) Electronic circuit member, its manufacturing method, and electronic component
KR102130868B1 (en) Bonded body, substrate for power modules, and substrate with heat sink for power modules
JP4283514B2 (en) Electronic circuit equipment
JP2014099596A (en) Substrate for power module with heat sink, power module with heat sink, and method for producing substrate for power module with heat sink
US9076755B2 (en) Method for producing substrate for power module with heat sink, substrate for power module with heat sink, and power module
EP2833398A1 (en) Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module
JP4756200B2 (en) Metal ceramic circuit board
JP5485110B2 (en) Wiring board, manufacturing method thereof, and electronic device
EP2296177A1 (en) Substrate for power module, power module, and method for producing substrate for power module
US8242387B2 (en) Electronic component storing package and electronic apparatus
EP1450401B1 (en) Module comprising a ceramic circuit board
US8299604B2 (en) Bonded metal and ceramic plates for thermal management of optical and electronic devices
KR20110132522A (en) Power semiconductor device
JP2008016818A (en) Semiconductor device and its manufacturing method
JP5991102B2 (en) Power module substrate with heat sink, power module with heat sink, and method for manufacturing power module substrate with heat sink

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110927

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120723

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120807

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121023

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121105

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151130

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5141566

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150