JP2010160254A - Liquid crystal display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To seal a TFT substrate and a counter substrate by using a UV curing resin without reducing contrast in a liquid crystal display device wherein a color filter is formed on the TFT substrate side. <P>SOLUTION: A black matrix 130 on the TFT substrate 100 side is extended to a lower part of a sealing material 15. A display region is regulated by a peripheral light shielding film 20 formed on the counter substrate 200 and having a prescribed width. The display region escapes reduction in contrast by the peripheral light shielding film 20 and the black matrix 130 formed at the lower part of the sealing material 15. On the other hand, since the peripheral light shielding film 20 has only the prescribed width, the whole sealing material 15 can be cured by irradiation with UV from an upper part of the counter substrate 200. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a display device, and more particularly to a liquid crystal display device in which a color filter is disposed on the TFT substrate side, the seal is reliable, and the contrast is excellent.

  In a conventional liquid crystal display device, a TFT substrate in which pixel electrodes and thin film transistors (TFTs) are formed in a matrix form, and a color filter or the like formed in a position corresponding to the pixel electrode of the TFT substrate, facing the TFT substrate. A substrate is installed, and liquid crystal is sandwiched between the TFT substrate and the counter substrate. An image is formed by controlling the light transmittance of the liquid crystal molecules for each pixel.

  In such a conventional liquid crystal display device, it is necessary to accurately match the pixel electrode formed on the TFT substrate and the color filter formed on the counter substrate, so that the TFT substrate and the counter substrate must be accurately aligned. Will occur. On the other hand, if the color filter is formed on the TFT substrate side, the alignment between the TFT substrate and the counter substrate may be rough. “Patent Document 1” describes a configuration in which a color filter is formed on such a TFT substrate.

  Further, in a conventional liquid crystal display device in which a color filter is formed on the counter substrate side, the liquid crystal is sealed inside the TFT substrate and the counter substrate by a sealing material formed in the periphery. Conventionally, a thermosetting resin has been used as the sealing material. On the other hand, by using an ultraviolet curable resin, the throughput of forming the seal portion can be shortened, and damage to the liquid crystal display panel due to heat can be eliminated.

  However, in the conventional configuration as described above, when the sealing material is irradiated with ultraviolet rays, since the light shielding film is formed on the periphery of the counter substrate, it cannot be irradiated from the counter substrate side. Therefore, ultraviolet rays are irradiated from the TFT substrate side. However, since a scanning line lead line, a video signal line lead line, and the like are formed on the TFT substrate side, the seal material may not be sufficiently irradiated with ultraviolet rays.

  In “Patent Document 2”, in a conventional liquid crystal display device in which a color filter and a light-shielding film (black matrix) are formed on the counter substrate side, the sealing material is not irradiated with ultraviolet rays by the peripheral light-shielding film on the counter substrate side. In order to prevent the phenomenon, a configuration is described in which a slit is provided in the light shielding film corresponding to the inside of the sealing material, and the sealing material is irradiated with ultraviolet rays from the slit. Further, in “Patent Document 2”, in a normally black configuration, light is emitted from a slit of a light shielding film formed around the screen by disposing the upper polarizing plate and the lower polarizing plate up to the end of the counter substrate. A configuration for preventing leakage is also described.

JP 2002-333611 A JP 2004-62138 A

  In the configuration in which the color filter is formed on the TFT substrate side, basically all the wiring, color filter, light shielding film, etc. are formed on the TFT substrate side, and no element such as a color filter is formed on the counter substrate. The counter substrate may be bare glass. Therefore, in such a configuration, the ultraviolet curable sealing material can be cured by irradiating ultraviolet rays from the counter substrate side.

  However, when the counter substrate is formed of bare glass, there arises a problem that the contrast around the screen is lowered by external light entering the counter substrate. In addition, a phenomenon that the boundary around the screen becomes unclear due to light refraction or reflection around the counter substrate also occurs. These phenomena reduce the image quality.

  If a light shielding film is formed around the counter substrate in order to prevent such a phenomenon, the advantage of forming a color filter on the TFT substrate side that can sufficiently irradiate the surrounding sealing material with ultraviolet rays is lost.

  An object of the present invention is to form a sealing material formed on the periphery of a liquid crystal display device in which a color filter is formed on the TFT substrate side with an ultraviolet curable resin, and to sufficiently irradiate the ultraviolet curable resin with ultraviolet rays for curing. It is possible to realize a liquid crystal display device that can perform the process and does not impair the image quality around the screen.

  The present invention overcomes the above problems, and specific means are as follows.

  (1) A first electrode formed in a planar shape, a comb-shaped second electrode disposed on the first electrode via an insulating film, and a TFT are formed. A color filter is formed in the lower layer of the electrode, and a TFT substrate having a display area in which pixels in which a black matrix is formed is arranged in a matrix in the upper layer of the TFT, and a counter substrate is the periphery facing the TFT substrate A liquid crystal display device in which liquid crystal is sealed in a region surrounded by the TFT substrate, the counter substrate, and the seal material, wherein the display region of the counter substrate is the counter substrate Defined by a peripheral light-shielding film having a predetermined width formed at the periphery of the peripheral light-shielding film, and an inner end portion of the peripheral light-shielding film is formed inside an inner end portion of the sealing material, and an outer end portion of the peripheral light-shielding film The sea Than the outer end portion of the timber is formed on the inner side, in the TFT substrate side, under the sealant, a liquid crystal display device characterized by light-shielding film of the black matrix is formed.

  (2) The liquid crystal display device according to (1), wherein a slit is formed in the peripheral light shielding film formed on the counter substrate, and the slit completely overlaps with the sealing material. .

  (3) The black matrix formed under the sealing material on the TFT substrate side is formed by laminating the color filters of red, green, and blue. Liquid crystal display device.

  (4) A TFT substrate having a display region in which pixel electrodes and TFTs are formed, a color filter is formed in the lower layer of the pixel electrode, and pixels in which a black matrix is formed in the upper layer of the TFT The counter substrate on which the counter electrode is formed is bonded to the TFT substrate by a sealing material formed in the periphery, and the liquid crystal is enclosed in a region surrounded by the TFT substrate, the counter substrate, and the sealing material The display region of the counter substrate is defined by a peripheral light shielding film having a predetermined width formed around the counter substrate, and an inner end portion of the peripheral light shielding film is the seal Formed on the inner side of the inner edge of the material, the outer edge of the peripheral light shielding film is formed on the inner side of the outer edge of the sealing material, on the TFT substrate side, Below the serial sealant, a liquid crystal display device characterized by light-shielding film of the black matrix is formed.

  (5) The liquid crystal display device according to (4), wherein a slit is formed in the peripheral light shielding film formed on the counter substrate, and the slit completely overlaps with the sealing material. .

  (6) The black matrix formed under the sealing material on the TFT substrate side is formed by laminating the color filters of red, green, and blue. (4) Liquid crystal display device.

  According to the present invention, in a liquid crystal display device in which a color filter and a black matrix are formed on the TFT substrate side, when an ultraviolet curable resin is used as a sealing material for bonding the TFT substrate and the counter substrate, the sealing material is stabilized by ultraviolet rays. Therefore, the reliability of the liquid crystal display device can be improved.

  In addition, a peripheral light-shielding film that defines the display area is provided on the counter substrate side, and this peripheral light-shielding film blocks external light incident on the periphery of the display area, thus preventing the phenomenon of image contrast deterioration around the screen. I can do it. In addition, since the width and position of the peripheral light shielding film are set to specific conditions in relation to the width and position of the sealing material, it is possible to achieve both UV curing of the sealing material and prevention of image deterioration.

  The contents of the present invention will be described in detail by the following examples.

  FIG. 1 is a plan view of a liquid crystal display device used in a mobile phone or the like, which is an example of a liquid crystal display device using the present invention. In FIG. 1, a counter substrate 200 is installed on the TFT substrate 100. A liquid crystal layer is sandwiched between the TFT substrate 100 and the counter substrate 200. The TFT substrate 100 and the counter substrate 200 are bonded together by a sealing material 15 formed in the periphery.

  In FIG. 1, since the liquid crystal display device is sealed by dropping liquid crystal, no liquid crystal sealing hole is formed. The TFT substrate 100 is formed larger than the counter substrate 200, and a terminal portion for supplying a power source, a video signal, a scanning signal, etc. to the liquid crystal cell in a portion where the TFT substrate 100 is larger than the counter substrate 200. 150 is formed.

  The terminal unit 150 is provided with an IC driver 50 for driving scanning lines, video signal lines, and the like. The IC driver 50 is divided into three regions, a video signal driving circuit 52 is installed at the center, and a scanning signal driving circuit 51 is installed on both sides.

  The display area 10 in FIG. 1 is defined by the peripheral light shielding film 20 formed on the counter substrate 200. The inner end of the sealing material 15 that bonds the counter substrate 200 and the TFT substrate 100 is formed slightly outside the inner end of the peripheral light shielding film 20. Further, the outer end of the sealing material 15 is formed outside the outer end of the peripheral light shielding film 20.

  In the display area 10 of FIG. 1, scanning lines (not shown) extend in the horizontal direction and are arranged in the vertical direction. In addition, video signal lines (not shown) extend in the vertical direction and are arranged in the horizontal direction. The scanning line is connected to the scanning signal driving circuit 51 of the IC driver 50 by the scanning line lead line 30. In FIG. 1, in order to arrange the display area 10 in the center of the liquid crystal display device, the scanning line lead lines 30 are arranged on both sides of the display area 10, and for this reason, the IC driver 50 includes both scanning signal driving circuits 51. It is set aside. On the other hand, the video signal line lead line 40 for connecting the video signal line and the IC driver 50 is collected on the lower side of the screen. The video signal line lead line 40 is connected to a video signal drive circuit 52 disposed at the center of the IC driver 50.

  In this embodiment, a case where the present invention is applied to an IPS (In Plane Switching) liquid crystal display device will be described. In the IPS liquid crystal display device, the amount of light passing through the liquid crystal layer 300 is controlled by rotating the liquid crystal molecules 301 by an electric field in a direction parallel to the surface of the TFT substrate 100, and has excellent viewing angle characteristics. Have.

  FIG. 2 is a cross-sectional view of the display region 10 when the color filter 120 is formed on the TFT substrate side in the IPS liquid crystal display device. In FIG. 2, a gate electrode 101 is formed on the TFT substrate 100. The gate electrode 101 is also used as a scanning line. The gate electrode 101 is made of, for example, Al. A gate insulating film 102 made of SiN or the like is formed on the gate electrode 101.

  A semiconductor layer 103 made of an a-Si film is formed on the gate insulating film 102. The semiconductor layer 103 forms a channel portion in the TFT. A source electrode 105 and a drain electrode 106 are formed of metal on both sides of the semiconductor layer 103. The source electrode 105 or the drain electrode 106 is formed of, for example, a Mo—Al—Mo laminated film. This is to prevent Al hillocks and to stabilize the connection with the pixel electrode 111 formed of ITO (Indium-Tin-Oxide).

  In order to make an ohmic contact between the semiconductor layer 103 and the source electrode 105 or the drain electrode 106, an n + Si layer 105 is formed between the semiconductor layer 103 and the source electrode 105 or the drain electrode 106. A TFT is formed by the gate electrode 101, the gate insulating film 102, the semiconductor layer 103, the n + Si layer 104, the source electrode 105 and the drain electrode 106.

  In order to protect the TFT from impurities, for example, an inorganic passivation film 107 made of SiN is formed. Note that the inorganic passivation film 107 is formed not only on the TFT portion but also on the entire surface of the TFT substrate 100. A black matrix 130 is formed on the inorganic passivation film 107 in the TFT portion. The black matrix 130 on the TFT prevents photocurrent from flowing to the TFT due to light from the counter substrate 200 side.

  The black matrix 130 is obtained by dispersing a black pigment in a photosensitive resin. The black matrix 130 is applied over the entire surface of the inorganic passivation film 107, exposed to a mask, developed, and patterned. By using a photosensitive resin, patterning can be performed without using a resist.

  A color filter 120 such as red, green, and blue is formed on a portion corresponding to the pixel electrode 110 on the inorganic passivation film 107. The color filter 120 is obtained by dispersing a pigment pigment in a photosensitive resin, and a pattern can be formed without using a resist as in the case of the black matrix 130.

  An organic passivation film 108 that also serves as a planarizing film is formed so as to cover the color filter 120 and the black matrix 130. Since the surface on which the color filter 120 or the black matrix 130 is formed is uneven, the surface is planarized by forming the organic passivation film 108 to a thickness of about 2 microns. The organic passivation film 108 is formed of a transparent photosensitive resin such as acrylic.

  In the organic passivation film 108, it is necessary to form a through hole for connecting the pixel electrode 111 and the source electrode 105 of the TFT. Since the organic passivation film 108 is formed of a photosensitive resin, a through hole can be formed without using a resist.

  On the organic passivation film 108, a counter electrode 109 made of ITO is formed with a flat solid surface. On the counter electrode 109, an interlayer insulating film 110 is formed of SiN, for example. The interlayer insulating film 110 is also formed in the through hole formed in the organic passivation film 108. A pixel electrode 111 is formed of ITO on the interlayer insulating film 110.

  The pixel electrode 111 needs to be electrically connected to the source electrode 105 of the TFT. Therefore, through-holes are formed in the interlayer insulating film 110 and the inorganic passivation film 107 before depositing the ITO serving as the pixel electrode 111. Thereafter, ITO to be the pixel electrode 111 is deposited by sputtering or the like.

  The ITO that becomes the pixel electrode 111 is patterned by photolithography. An example of the planar shape of the pixel electrode 111 is shown in FIG. In FIG. 3, the pixel electrode 111 is a comb-like electrode with both ends closed. A slit 112 is formed between the comb teeth. In FIG. 3, when a voltage based on a video signal is applied to the pixel electrode 111, lines of electric force are formed in a flat plane under the pixel electrode 111 and extend in the direction of the counter electrode 109 to which the reference voltage is applied. The liquid crystal molecules 301 are rotated by the lines of electric force, and the amount of light passing through the liquid crystal layer 300 is controlled.

  FIG. 2 shows this state. In FIG. 2, the lines of electric force from the pixel electrode 111 once enter the liquid crystal layer 300, passing through the slit 112 between the comb electrodes and toward the lower counter electrode 109. FIG. 2 shows that the liquid crystal molecules 301 are aligned along the lines of electric force. An alignment film 113 is formed on the pixel electrode 111.

  A color filter 120 is formed under the pixel electrode 111. Since light passing through each pixel electrode 111 has a spectrum of each color by the color filter 120, a color image can be obtained. In this embodiment, since the TFT is formed on the scanning line, the pixel electrode 111 is not formed on the TFT.

  In FIG. 2, the pixel electrode 111 is formed with a comb-like electrode on the upper side, and the counter electrode 109 is formed with a flat solid on the lower side. Conversely, the counter electrode 109 may be formed as a comb-shaped electrode on the upper side, and the pixel electrode 111 may be formed as a flat solid on the lower side. In this case, the pixel electrode 111 formed by the lower flat solid is connected to the source electrode 105 of the TFT, and a reference voltage is applied to the counter electrode 109 which is the upper comb-like electrode.

  A counter substrate 200 is disposed opposite the TFT with the liquid crystal layer 300 interposed therebetween. In the IPS method, the counter electrode 109 is also formed on the TFT substrate 100. Therefore, the counter substrate 200 does not require an electrode. However, in the case where the counter substrate 200 is made of bare glass with only the alignment film 113 formed, if electromagnetic noise enters from the outside, this will affect the image.

  In order to prevent this, a surface conductive film 210 made of a transparent electrode such as ITO is formed outside the counter substrate 200. By connecting the surface conductive film 210 to a reference potential such as ground, the inside of the liquid crystal display panel can be shielded.

  In FIG. 2, the liquid crystal layer 300 is sealed between the TFT substrate 100 and the counter substrate 200 by the sealing material 15 of FIG. 4 is a cross-sectional view of the periphery of the display region 10 shown in FIG. In FIG. 4, a first scanning line lead line 31 is formed on the TFT substrate 100. The first scanning line lead line 31 is covered with the gate insulating film 102, and the scanning line lead line 30 is formed on the gate insulating film 102. An inorganic passivation film 107 is formed on the second scanning line lead line 32. 4, 5, 6, 7, 8, and 9, the surface conductive film 210 and the alignment film 113 are omitted.

  In FIG. 1, the scanning line lead line 30 extends under the sealing material 15 on both sides of the display area 10 in the direction of the terminal portion 150. In order to make the area occupied by the scanning line lead line 30 as small as possible, the scanning line lead line 30 is divided into two layers. The second scanning line lead line 32 as the upper layer is formed in the same layer as the video signal line.

  A black matrix 130 is formed on the inorganic passivation film 107. The black matrix 130 is formed even under the sealing material 15 and prevents light from entering the periphery of the display area 10 from the outside. As described above, since the black matrix 130 is formed under the sealing material 15, the sealing material 15 cannot be cured even if ultraviolet rays are irradiated from the TFT substrate 100 side.

  In the present invention, the sealing material 15 is cured by irradiating ultraviolet rays from the counter substrate 200 side. On the other hand, in this embodiment, the peripheral light shielding film 20 is formed in a frame shape with a predetermined width around the display area 10 on the counter substrate 200 side. By forming the peripheral light shielding film 20 around the display area 10, it is possible to prevent external light from entering the display area 10 and affecting the image.

When ultraviolet rays are irradiated from the counter substrate 200 side, the ultraviolet rays 600 are directly applied to the sealing material 15 as shown in FIG. 4, or a part of the sealing materials 15 is irradiated by reflection or diffraction and sealed. 15 will be cured. A feature of the present invention is that the width of the peripheral light shielding film 20 formed on the counter substrate 200 is defined to be a predetermined small width. In other words, if the width of the peripheral light shielding film 20 is large, the ultraviolet ray is not sufficiently irradiated into the sealing material 15. On the other hand, the black matrix 130 is formed in the periphery on the TFT substrate 100 side under the sealing material 15. Therefore, the light entering from the lower side of the TFT substrate 100 is blocked by the black matrix 130, and the image quality of the peripheral image can be prevented from deteriorating.

  In FIG. 4, light that affects the image around the display region 10 with light from above the TFT substrate 100 is mostly blocked by the peripheral light shielding film 20 formed on the counter substrate 200. However, when the width of the peripheral light shielding film 20 is very small, the image quality may be deteriorated due to reflection of external light from the counter substrate 200 side. In such a case, as shown in FIG. 5, by covering the periphery with a frame 400, it is possible to prevent deterioration of image quality around the screen due to external light.

  In FIG. 5, a lower polarizing plate 410 is bonded to the lower side of the TFT substrate 100, and an upper polarizing plate 420 is bonded to the upper side of the counter substrate 200. The TFT substrate 100 is placed on a mold 500 formed of a resin that accommodates a backlight. The TFT substrate 100 is fixed to the mold 500 by a double-sided adhesive tape 450 that also serves as a light shielding film. The mold 500 accommodates a backlight or the like (not shown). The frame 400 covers the periphery of the counter substrate 200 and prevents light from the outside from entering the liquid crystal layer 300. Note that the frame 400 accommodates a liquid crystal display panel, a mold 500, and the like.

  FIG. 6 shows an example when the present invention is not used. FIG. 6 is a sectional view of the periphery of the liquid crystal display panel and corresponds to FIG. 6 is the same as FIG. 4 in that a black matrix 130 is formed under the sealing material 15 on the TFT substrate 100 side. In FIG. 6, the peripheral light shielding film 20 is not formed on the counter substrate 200. Since the peripheral light shielding film 20 is not formed, the sealing material 15 can be cured by irradiating ultraviolet rays from the TFT substrate 100 side.

  However, in the configuration of FIG. 6, when external light is incident from the counter substrate 200 side, light reflected by the black matrix 130 or the TFT substrate 100 or light diffracted by the counter substrate 200 enters the display region 10. And the image quality deteriorates. Further, light that has entered from the TFT substrate 100 side, for example, a backlight or the like, enters the display region 10 from a portion where the black matrix 130 of the TFT substrate 100 does not exist, and degrades the image quality.

  FIG. 7 shows another example when the present invention is not used. In FIG. 7, the display area 10 is defined by the peripheral light shielding film 20 formed on the counter substrate 200. The peripheral light shielding film 20 formed on the counter substrate 200 in FIG. 7 is formed up to the end of the counter substrate 200. Therefore, the entry of external light from the counter substrate 200 side can be prevented. However, in the configuration of FIG. 7, the sealing material 15 cannot be cured by irradiating ultraviolet rays from the counter substrate 200 side.

  On the other hand, in FIG. 7, the black matrix 130 is not formed in the peripheral portion on the TFT substrate 100 side. In this case, when the sealing material 15 is cured by irradiating ultraviolet rays from the TFT substrate 100 side, the ultraviolet rays 600 from the TFT substrate 100 side are emitted from the first scanning line lead line 31 and the second scanning line as shown in FIG. The light is reflected by the lead line 32 and the like and enters the inside of the sealing material 15.

  Although the sealing material 15 can be cured by such an irradiation method, the sealing material 15 is sufficiently solidified depending on the arrangement of the first scanning line lead line 31 and the second scanning line lead line 32 or the line width. There may be cases where it does not. Therefore, with the configuration as shown in FIG. 7, the sealing material 15 cannot be solidified stably.

  Further, in the configuration as shown in FIG. 7, since the black matrix 130 is not formed around the TFT substrate 100, the contrast of the image around the screen is degraded by external light such as a backlight entering from the TFT substrate 100 side. To do.

  FIG. 8 shows still another example when the present invention is not used. The configuration of the counter substrate 200 in FIG. 8 is the same as that in FIG. Therefore, in the configuration of FIG. 8, it is possible to prevent external light from entering from the counter substrate 200 side, but it is not possible to cure the sealing material 15 by irradiating ultraviolet rays from the counter substrate 200 side.

  On the other hand, in FIG. 8, a black matrix 130 is formed around the TFT substrate 100. The black matrix 130 formed in the periphery of the TFT substrate 100 can prevent deterioration of the contrast of the image around the screen. However, since the black matrix 130 is formed around the TFT substrate 100, it is difficult to cure the entire sealing material 15 by irradiating ultraviolet rays from the TFT substrate 100 side.

  As can be seen from the comparison with the comparative example as described above, the configuration of the present invention can stably cure the sealing material 15 for sealing the TFT substrate 100 and the counter substrate 200 by ultraviolet irradiation, Degradation of image quality can be prevented. Further, since the display area 10 is defined by the peripheral light shielding film 20 formed around the counter substrate 200, the image quality around the display area 10 is not deteriorated by the shielding action against the external light by the peripheral light shielding film 20.

  FIG. 9 shows a second embodiment according to the present invention. FIG. 9 is a cross-sectional view showing a peripheral portion of the liquid crystal display device. In FIG. 9, the process up to the black matrix 130 in the TFT substrate 100 is the same as that in FIG. On the counter substrate 200 in FIG. 9, the peripheral light shielding film 20 is formed further outward than in the first embodiment. That is, the peripheral light shielding film 20 is formed so as to overlap more with the sealing material 15. This is to shield more external light from the TFT substrate 100 side.

  However, in the configuration in which the peripheral light shielding film 20 is formed wider as described above, there is a problem in that the seal material 15 is not sufficiently irradiated with ultraviolet rays and the seal material 15 in this portion is not sufficiently cured. Arise. In order to solve this problem, the present invention introduces ultraviolet rays into the sealing material 15 by forming a slit having a width d in the peripheral light shielding film 20.

  It is sufficient that the width d of the slit 201 is about 50 μm. The ultraviolet light that has entered through the slit 201 is diffracted inside the sealing material 15, and the portion of the sealing material 15 covered by the peripheral light shielding film 20 is also cured. On the other hand, external light entering the sealing material 15 from the slit 201 of about 50 μm does not have a great influence on the image.

  Other configurations in FIG. 9 are the same as those in FIG. 4 of the first embodiment. Further, when the deterioration of the image quality around the screen due to the incidence of external light from the periphery becomes a problem, as shown in FIG. 5 of the first embodiment, the liquid crystal display panel is displayed by the frame 400 that accommodates the liquid crystal display panel and the backlight. It is possible to take measures by covering the surrounding area.

  In the first and second embodiments, the case where the present invention is applied to an IPS liquid crystal display device has been described. However, the present invention can be applied not only to an IPS liquid crystal display device but also to a liquid crystal display device such as a normal TN (Twisted Nematic) method or a VA (Vertical Alignment) method.

  FIG. 10 is a cross-sectional view of the TN liquid crystal display device when the color filter 120 and the black matrix 130 are formed on the TFT substrate 100 side. 10, the configuration up to the inorganic passivation film 107 formed on the TFT substrate 100 is the same as that in FIG. The configurations of the color filter 120 and the black matrix 130 formed on the inorganic passivation film 107 are the same as those in FIG.

  In FIG. 10, an organic passivation film 108 that also serves as a planarizing film is formed so as to cover the color filter 120 and the black matrix 130. The pixel electrode 111 formed on the organic passivation film 108 is formed in a planar shape. An alignment film 113 is formed so as to cover the pixel electrode 111.

  In FIG. 10, a counter electrode 109 is formed inside the counter electrode 109, and an alignment film 113 is formed to cover the counter electrode 109. In the TN method, the amount of light that passes through the liquid crystal layer 300 by twisting the liquid crystal molecules 301 by a vertical electric field generated between the pixel electrode 111 formed on the TFT substrate 100 and the counter electrode 109 formed on the counter substrate 200. To control.

  FIG. 10 is a cross-sectional view of a TN liquid crystal display device, but the configuration of the VA liquid crystal display device is substantially the same. However, in the VA method, the amount of light passing through the liquid crystal layer 300 is controlled by the liquid crystal molecules 301 being tilted in the horizontal direction by a vertical electric field generated between the pixel electrode 111 and the counter electrode 109.

  Also in the TN liquid crystal display device shown in FIG. 10, the peripheral portion for sealing the liquid crystal can be the same as in FIG. 4 of the first embodiment, FIG. 9 of the second embodiment, or the like. Further, when external light from the surroundings becomes a problem, the structure shown in FIG.

  In the above description, the black matrix 130 formed around the TFT substrate 100 uses a material in which a black pigment is dispersed in a photosensitive resin. However, depending on the product, the black matrix 130 separately formed in the display area 10 may not be used. In such a case, a laminated layer of red, green and blue color filters 120 can be used as the peripheral light shielding film 20. This is because when three color filters 120 are stacked, a black light shielding film is formed. In this case, the black matrix 130 on the TFT shown in FIG. 2 or FIG. 10 can be a black matrix 130 formed by stacking three color filters 120.

It is a top view of the liquid crystal display device with which this invention is applied. 1 is a cross-sectional view of a liquid crystal display device of Example 1. FIG. It is a top view of a pixel electrode. 3 is a cross-sectional view of a seal portion of the liquid crystal display device of Example 1. FIG. It is the cross-sectional schematic diagram which incorporated the liquid crystal display device of Example 1 in the flame | frame. It is sectional drawing which shows the comparative example of a seal | sticker part. It is sectional drawing which shows the other comparative example of a seal | sticker part. It is sectional drawing which shows the other comparative example of a seal | sticker part. 3 is a cross-sectional view of a seal portion of the liquid crystal display device of Example 1. FIG. It is sectional drawing of the liquid crystal display device with which Example 3 is applied.

  DESCRIPTION OF SYMBOLS 10 ... Display area, 15 ... Sealing material, 20 ... Peripheral light shielding film, 30 ... Scanning line leader line, 31 ... 1st scanning line leader line, 32 ... 2nd scanning line leader line, 40 ... Image signal line leader line, 50 DESCRIPTION OF SYMBOLS IC driver 51 Scan signal drive circuit 52 Video signal drive circuit 100 TFT substrate 101 Gate electrode 102 Gate insulating film 103 Semiconductor layer 104 n + Si layer 105 Source electrode DESCRIPTION OF SYMBOLS 106 ... Drain electrode, 107 ... Inorganic passivation film, 108 ... Organic passivation film, 109 ... Counter electrode, 110 ... Interlayer insulating film, 111 ... Pixel electrode, 112 ... Pixel electrode slit, 113 ... Alignment film, 120 ... Color filter, 130 ... Black matrix, 150 ... Terminal part, 200 ... Counter substrate, 210 ... Surface conductive film, DESCRIPTION OF SYMBOLS 300 ... Liquid crystal layer, 301 ... Liquid crystal molecule, 400 ... Frame, 410 ... Lower polarizing plate, 420 ... Upper polarizing plate, 450 ... Light-shielding adhesive tape, 500 ... Mold, 600 ... Ultraviolet.

Claims (6)

A first electrode formed in a planar shape, a comb-shaped second electrode disposed on the first electrode via an insulating film, and a TFT are formed, and a lower layer of the first electrode A TFT substrate having a display region in which a color filter is formed and pixels on which a black matrix is formed on the TFT are arranged in a matrix,
A liquid crystal display device in which a counter substrate is bonded to the TFT substrate by a sealing material formed in the periphery, and liquid crystal is sealed in a region surrounded by the TFT substrate, the counter substrate, and the sealing material,
The display area of the counter substrate is defined by a peripheral light shielding film having a predetermined width formed around the counter substrate,
The inner end of the peripheral light shielding film is formed inside the inner end of the sealing material,
The outer end portion of the peripheral light shielding film is formed inside the outer end portion of the sealing material,
A liquid crystal display device, wherein a black matrix light shielding film is formed under the sealing material on the TFT substrate side.   The liquid crystal display device according to claim 1, wherein a slit is formed in the peripheral light-shielding film formed on the counter substrate, and the slit completely overlaps with the sealing material.   2. The liquid crystal display device according to claim 1, wherein the black matrix formed under the sealing material on the TFT substrate side is formed by laminating the color filters of red, green and blue. . A TFT substrate having a display region in which a pixel electrode and a TFT are formed, a color filter is formed in a lower layer of the pixel electrode, and a pixel in which a black matrix is formed in the upper layer of the TFT is arranged in a matrix;
Opposite the TFT substrate, a counter substrate on which a counter electrode is formed is adhered by a sealing material formed in the periphery, and liquid crystal is sealed in a region surrounded by the TFT substrate, the counter substrate, and the sealing material. A liquid crystal display device,
The display area of the counter substrate is defined by a peripheral light shielding film having a predetermined width formed around the counter substrate,
The inner end of the peripheral light shielding film is formed inside the inner end of the sealing material,
The outer end portion of the peripheral light shielding film is formed inside the outer end portion of the sealing material,
A liquid crystal display device, wherein a black matrix light shielding film is formed under the sealing material on the TFT substrate side.   The liquid crystal display device according to claim 4, wherein a slit is formed in the peripheral light-shielding film formed on the counter substrate, and the slit completely overlaps with the sealing material.   5. The liquid crystal display device according to claim 4, wherein the black matrix formed under the sealing material on the TFT substrate side is formed by laminating the color filters of red, green, and blue. .

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