JP2010140942A - 半導体発光装置およびその製造方法 - Google Patents
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract
【解決手段】封止材に混合する光反射性フィラーの濃度を、所定以上の光束を維持可能で、かつ、ワイヤ断線の発生の可能性の低い範囲のものとする。また、その範囲において、複数の濃度の封止材を用意し、光反射性フィラーの濃度により色度がシフトすることを利用して、製造時に半導体発光素子の色度に応じた濃度の封止材を用い、色度のばらつきを製造時に抑える。
【選択図】 図1
Description
以下、本発明を適用する第一の実施形態について図を用いて説明する。以下、本発明の実施形態を説明するための全図において、同一機能を有するものは同一符号を付し、その繰り返しの説明は省略する。
次に、本発明の第二の実施形態を説明する。本実施形態では、第一の実施形態の半導体発光装置10について、色度のばらつきを抑え、歩留まりを高くする製造方法を提供する。本実施形態では、封止材17の酸化チタンTiO2の濃度の対数に比例して封止前の色度座標が変化する性質を利用し、製品の色度のばらつきによる歩留まりを改善する。
Claims (5)
- 半導体発光素子と、
前記半導体発光素子から出射された光の波長を変換する波長変換層と、
前記半導体発光素子と前記波長変換層とを実装する基板と、
前記半導体発光素子と基板とを電気的に接続するボンディングワイヤと、
樹脂を主成分とする封止材と、を備える半導体発光装置であって、
前記封止材は、前記波長変換層の側面に配置され、酸化チタンを含有する光透過性樹脂であり、
当該酸化チタンの含有量は、0.1〜8.0wt%であること
を特徴とする半導体発光装置。 - 請求項1記載の半導体発光装置であって、
前記酸化チタンの含有量は、0.5〜2.0wt%であること
を特徴とする半導体発光装置。 - 請求項1記載の半導体発光装置であって、
前記ボンディングワイヤは、前記封止材中に配置されること
を特徴とする半導体発光装置。 - 半導体発光素子と、
前記半導体発光素子から出射された光の波長を変換する波長変換層と、
前記半導体発光素子と前記波長変換層とを実装する基板と、
前記半導体発光素子と基板とを電気的に接続するボンディングワイヤと、
樹脂を主成分とする封止材と、を備える半導体発光装置の製造方法であって、
波長変換層を備えた発光素子の色度を測定する色度測定ステップと、
前記色度測定ステップにおいて測定された色度と目標とする色度との差である色度シフト量に基づいて、前記封止材の酸化チタン濃度を決定する濃度決定ステップと、
前記濃度決定ステップで決定した酸化チタン濃度の前記封止材を充填する封止材充填ステップと、を備えること
を特徴とする半導体発光装置の製造方法。 - 請求項4記載の半導体発光装置の製造方法であって、
前記濃度決定ステップは、
予め定められた、前記色度シフト量と前記酸化チタン濃度との関係に基づいて、前記酸化チタン濃度を決定すること
を特徴とする半導体発光装置の製造方法。
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JP2008313084A JP4808244B2 (ja) | 2008-12-09 | 2008-12-09 | 半導体発光装置およびその製造方法 |
KR1020090121008A KR101639353B1 (ko) | 2008-12-09 | 2009-12-08 | 반도체 발광장치 및 그 제조방법 |
US12/634,229 US20100140648A1 (en) | 2008-12-09 | 2009-12-09 | Semiconductor light emitting device and method for producing the same |
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JP2008313084A JP4808244B2 (ja) | 2008-12-09 | 2008-12-09 | 半導体発光装置およびその製造方法 |
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JP2010140942A true JP2010140942A (ja) | 2010-06-24 |
JP4808244B2 JP4808244B2 (ja) | 2011-11-02 |
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US (1) | US20100140648A1 (ja) |
JP (1) | JP4808244B2 (ja) |
KR (1) | KR101639353B1 (ja) |
Cited By (16)
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JP2013526047A (ja) * | 2010-04-30 | 2013-06-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | オプトエレクトロニクスデバイスおよびオプトエレクトロニクスデバイスを製造する方法 |
JP5261742B1 (ja) * | 2012-08-13 | 2013-08-14 | 株式会社昭和真空 | 発光装置の製造方法及び発光装置の色度調整方法 |
JP2013197439A (ja) * | 2012-03-22 | 2013-09-30 | Koito Mfg Co Ltd | 発光モジュールおよび車両用灯具 |
JP2014029947A (ja) * | 2012-07-31 | 2014-02-13 | Nichia Chem Ind Ltd | 発光装置 |
US8753907B2 (en) | 2011-06-17 | 2014-06-17 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing the same |
JP2014146783A (ja) * | 2013-01-29 | 2014-08-14 | Lg Innotek Co Ltd | ランプユニット |
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JP2016532898A (ja) * | 2013-07-30 | 2016-10-20 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 変換要素およびオプトエレクトロニクス部品の製造方法、変換要素、ならびに、オプトエレクトロニクス部品 |
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JP2021068917A (ja) * | 2021-01-20 | 2021-04-30 | 三菱電機株式会社 | 発光装置 |
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JP7283489B2 (ja) | 2021-01-20 | 2023-05-30 | 三菱電機株式会社 | 発光装置 |
Also Published As
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KR101639353B1 (ko) | 2016-07-13 |
US20100140648A1 (en) | 2010-06-10 |
JP4808244B2 (ja) | 2011-11-02 |
KR20100066397A (ko) | 2010-06-17 |
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