JP2010080465A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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JP2010080465A
JP2010080465A JP2008243492A JP2008243492A JP2010080465A JP 2010080465 A JP2010080465 A JP 2010080465A JP 2008243492 A JP2008243492 A JP 2008243492A JP 2008243492 A JP2008243492 A JP 2008243492A JP 2010080465 A JP2010080465 A JP 2010080465A
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light emitting
package
emitting diode
type light
electrode
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Koji Fushimi
宏司 伏見
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CI Kasei Co Ltd
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CI Kasei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-quality light-emitting device having such a structure as a light-emitting diode (LED) is fixed to a package. <P>SOLUTION: At least a pair of package electrodes is provided, a vertical electrode type light-emitting diode 11 is mounted on one package electrode, and the upper portion electrode 121 of the vertical electrode type light-emitting diode is connected with the other package electrode. The package electrodes, the vertical electrode type light-emitting diode, and a metal member 15 are joined by solders 17 and 17'. The metal member is stretched substantially linearly between the upper portion electrode of the vertical electrode type light-emitting diode and the other package electrode and connected mutually. The vicinity of joint of the upper portion electrode of the vertical electrode type light-emitting diode and the metal member, and the side of an upper surface electrode type light-emitting diode are covered with a synthetic resin member. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、発光ダイオード（ＬＥＤ）をパッケージに取り付ける際に、前記発光ダイオードの電極とパッケージ電極との間を金属部材によって直線的に張架することにより、品質の高い発光装置に関するものである。   The present invention relates to a high-quality light-emitting device by linearly stretching between the electrode of the light-emitting diode and the package electrode by a metal member when the light-emitting diode (LED) is attached to a package.

図２（イ）は従来の発光素子をパッケージに組み込んだ状態を説明するための上下電極型発光ダイオードを用いた発光装置の概略断面図、（ロ）は従来の発光装置の平面図、（ハ）は前記上下電極型発光ダイオードの断面図である。図２（イ）から（ハ）において、上下電極型発光ダイオード２１からなる発光装置２０は、第１の金属基板２２および第２の金属基板２４の間に絶縁部材２３が配置されて互いに絶縁されている。前記第１の金属基板２２および第２の金属基板２４は、セラミック基板上に互いに絶縁された導電膜を形成すること、あるいは、金属基板と導電膜を有するセラミック基板とすることもできる。   FIG. 2A is a schematic cross-sectional view of a light emitting device using upper and lower electrode type light emitting diodes for explaining a state in which a conventional light emitting element is incorporated in a package, and FIG. 2B is a plan view of the conventional light emitting device. ) Is a cross-sectional view of the upper and lower electrode type light emitting diode. 2A to 2C, the light emitting device 20 composed of the upper and lower electrode type light emitting diodes 21 is insulated from each other by disposing an insulating member 23 between the first metal substrate 22 and the second metal substrate 24. ing. The first metal substrate 22 and the second metal substrate 24 may be formed of a conductive film insulated from each other on a ceramic substrate, or may be a ceramic substrate having a metal substrate and a conductive film.

前記上下電極型発光ダイオード２１は、上部部分電極２２１と、下部電極２２７とを備えている。前記上部部分電極２２１は、中央部から光が照射し易くするために、たとえば、目の字状の開口部２２３を設けることもできる。下部電極２２７は、図示されていない発光層を挟んだ下部から導出される。前記上部部分電極２２１は、金属部材２５によって、第２の金属基板２４に、たとえば、ハンダペーストを載置した後、加熱されることによりハンダ接合されている。また、第１の金属基板２２は、前記上下電極型発光ダイオード２１の下部電極２２７に前記同様に、ハンダ接合されている。   The upper / lower electrode type light emitting diode 21 includes an upper partial electrode 221 and a lower electrode 227. The upper partial electrode 221 may be provided with, for example, an eye-shaped opening 223 in order to facilitate light irradiation from the center. The lower electrode 227 is led out from the lower part sandwiching a light emitting layer (not shown). The upper partial electrode 221 is solder-bonded by, for example, a solder paste placed on the second metal substrate 24 by the metal member 25 and then heated. The first metal substrate 22 is soldered to the lower electrode 227 of the upper and lower electrode type light emitting diode 21 in the same manner as described above.

前記金属部材２５は、電気抵抗が少なく、大電流を流すことができるとともに、放熱性が優れているだけでなく、形状を容易に変えることができるため、各電極の接合が容易にできる。   The metal member 25 has a low electrical resistance, allows a large current to flow, is not only excellent in heat dissipation, and can be easily changed in shape, so that the electrodes can be easily joined.

前記発光装置２０は、金属基板２２、２４、および絶縁部材２３の上に反射枠２６が、たとえば、熱硬化性接着剤等により接合されている。前記反射枠２６の前端部には、前記上下電極型発光ダイオード２１の間に空気層を介して蛍光体含有膜体２８が設けられている。前記蛍光体含有膜体２８は、空気層を介して上下電極型発光ダイオード２１から放射される紫外線を白色光に変換することがきるものであるが、所望の色の光を得たい場合、蛍光体を任意に選択することができる。   In the light emitting device 20, a reflective frame 26 is bonded onto the metal substrates 22, 24 and the insulating member 23 by, for example, a thermosetting adhesive. At the front end of the reflection frame 26, a phosphor-containing film body 28 is provided between the upper and lower electrode type light emitting diodes 21 via an air layer. The phosphor-containing film body 28 can convert the ultraviolet rays emitted from the upper and lower electrode type light emitting diodes 21 through the air layer into white light. The body can be selected arbitrarily.

また、従来の発光ダイオードは、下部に下部電極、ｐ型半導体層、活性層、ｎ型半導体層、上部部分電極が形成されている上下電極型発光ダイオードと、基板上に、バッファ層、ｎ型半導体層、活性層、ｐ型半導体層が形成され、前記ｎ型およびｐ型半導体層の一部にそれぞれ電極が形成されている上面電極型発光ダイオードとがある。たとえば、特許第３７８５８２０号公報、特許第３３６９０８９号公報、または特許第３５１１９７０号公報に記載されている。
特許第３７８５８２０号公報 特許第３３６９０８９号公報 特許第３５１１９７０号公報 In addition, the conventional light emitting diode includes a lower electrode, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, and an upper partial electrode formed with a lower electrode, a buffer layer, and an n-type on the substrate. There is a top electrode type light emitting diode in which a semiconductor layer, an active layer, and a p-type semiconductor layer are formed, and electrodes are respectively formed on part of the n-type and p-type semiconductor layers. For example, it is described in Japanese Patent No. 3785820, Japanese Patent No. 3369089, or Japanese Patent No. 3511970.
Japanese Patent No. 3785820 Japanese Patent No. 3369089 Japanese Patent No. 3511970

前記図２（イ）から（ハ）に示す上下電極型発光ダイオードは、上部部分電極２２１と金属基板２４とを金属部材２５によって電気的に接続している。前記金属部材２５は、図２（イ）および（ハ）によって判るように、折り曲げられた部分から構成されている。また、前記金属部材２５は、前記上部部分電極２２１と金属基板２４の接合部との距離の違いを吸収するために、湾曲した形状にする場合がある。前記形状の金属部材２５は、絶縁部材により充填していないため、作製中に何らかの原因により、なにかに触れることにより蛍光体含有膜体が変形して、金属部材２５に触れる場合があり、ショートによる不点灯が発生する原因になっていた。   In the upper and lower electrode type light emitting diodes shown in FIGS. 2A to 2C, the upper partial electrode 221 and the metal substrate 24 are electrically connected by the metal member 25. The metal member 25 is composed of a bent portion as can be seen from FIGS. In addition, the metal member 25 may have a curved shape in order to absorb a difference in distance between the upper partial electrode 221 and the joint portion of the metal substrate 24. Since the metal member 25 having the shape is not filled with an insulating member, the phosphor-containing film body may be deformed by touching something for some reason during fabrication, and may touch the metal member 25. It was the cause of non-lighting.

さらに、前記金属部材２５は、前記上部部分電極２２１と金属基板２４の高さの相違により、湾曲する必要があった。前記湾曲した金属部材２５は、そのための工数の増加、あるいは湾曲部によるハンダ接合の不良が発生するという問題があった。また、金属部材の成形誤差を吸収するため、ハンダペーストを過剰量塗布し、金属部材を接合する必要があり、そのため、ハンダ接合時の加熱によりハンダが飛び散り、そのハンダ粒子によるショートが発生していた。   Further, the metal member 25 needs to be bent due to the difference in height between the upper partial electrode 221 and the metal substrate 24. The curved metal member 25 has a problem in that the man-hour for that purpose is increased, or a solder joint failure due to the curved portion occurs. In addition, in order to absorb the molding error of the metal member, it is necessary to apply an excessive amount of solder paste and to join the metal member. For this reason, the solder scatters due to heating at the time of soldering, and a short circuit due to the solder particles occurs. It was.

以上のような課題を解決するために、本発明は、金属部材を成形する工程、発光装置の作製中の事故を無くすとともに、接合部における接合品質を向上させることができる発光装置を提供することを目的とする。   In order to solve the above-described problems, the present invention provides a light-emitting device capable of eliminating the accident during the process of forming the metal member and the light-emitting device and improving the joint quality at the joint. With the goal.

（第１発明）
第１発明の発光装置は、少なくとも一対のパッケージ電極が設けられたパッケージを用い、前記一方のパッケージ電極に上下電極型発光ダイオードを載置し、前記上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極とが金属部材を介してハンダ接合されており、前記金属部材は、前記上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極との間をほぼ直線的に張架するとともに、前記上下電極型発光ダイオードの上部部分電極と前記金属部材の接合部近傍を、硬化性部材で絶縁処理したことを特徴とする。 (First invention)
A light emitting device according to a first aspect of the present invention uses a package provided with at least a pair of package electrodes, and an upper and lower electrode type light emitting diode is mounted on the one of the package electrodes, A package electrode is soldered via a metal member, and the metal member stretches between the upper partial electrode of the upper and lower electrode type light emitting diode and the other package electrode substantially linearly, and The upper portion electrode of the electrode type light emitting diode and the vicinity of the joint portion of the metal member are insulated with a curable member.

（第２発明）
第２発明の発光装置における金属部材は、金製リボン、あるいは、薄板状に成形された銅、ニッケル、アルミニウム、およびこれらの合金のいずれかに金、銀の少なくとも１種がメッキされているものであることを特徴とする。 (Second invention)
The metal member in the light emitting device of the second invention is a gold ribbon or a thin plate-shaped copper, nickel, aluminum, or alloy thereof plated with at least one of gold and silver It is characterized by being.

（第３発明）
第３発明の発光装置は、反射枠と前記反射枠の凹部底面に少なくとも一対のパッケージ電極が設けられたパッケージと、前記反射枠の上面部に取り付けられ、空気層を介して上下電極型発光ダイオードから発光された紫外線ないし青色の光をほぼ白色光に変換する少なくとも一つの蛍光体を含有している蛍光体含有膜体とから少なくとも構成されていることを特徴とする。 (Third invention)
A light-emitting device according to a third aspect of the present invention is a light emitting device having a reflective frame, a package provided with at least a pair of package electrodes on the bottom surface of the concave portion of the reflective frame, and an upper and lower electrode type light-emitting diode attached to the upper surface of the reflective frame via an air layer And a phosphor-containing film body containing at least one phosphor that converts ultraviolet light or blue light emitted from the light into substantially white light.

（第４発明）
第４発明の発光装置における他方のパッケージ電極は、一方のパッケージ電極より前記上下電極型発光ダイオードのほぼ厚さに相当する分高く形成されていることを特徴とする。 (Fourth invention)
In the light emitting device of the fourth invention, the other package electrode is formed higher than the one package electrode by an amount corresponding to the thickness of the upper and lower electrode type light emitting diode.

本発明によれば、上下電極型発光ダイオードの上部部分電極と、他方のパッケージ電極とを接続する金属部材をほぼ直線的に張架したため、金属部材の成形誤差が無く、接合面との角度が常に均一であるため、ハンダペーストが少量の一定量で接合できるので、ハンダペーストが飛び散ることも無く、遊離したハンダ粒子が発生しないので発光装置の品質を向上させることができる。   According to the present invention, since the metal member that connects the upper partial electrode of the upper and lower electrode type light emitting diode and the other package electrode is stretched almost linearly, there is no molding error of the metal member, and the angle with the joint surface is Since it is always uniform, the solder paste can be joined in a small amount, so that the solder paste does not scatter and free solder particles are not generated, so that the quality of the light emitting device can be improved.

本発明によれば、上下電極型発光ダイオードの上部部分電極と前記金属部材の接合部近傍を硬化性部材、たとえば、合成樹脂部材または金属酸化物膜によって絶縁処理しているので、金属部材の変形によるショートの発生を無くすことができる。   According to the present invention, the vicinity of the junction between the upper partial electrode of the upper and lower electrode type light emitting diode and the metal member is insulated with a curable member, for example, a synthetic resin member or a metal oxide film. It is possible to eliminate the occurrence of short circuit.

本発明によれば、上下電極型発光ダイオードの下部電極と一方の金属基板等あるいはパッケージ電極との接合、前記上下電極型発光ダイオードの上部部分電極と金属部材の一方の接合、および金属部材の他方とパッケージ電極、あるいは金属基板等の他方の接合が良好であるだけでなく、金属部材の面積を大きくしているため、接合強度の向上、放熱性の改善、良好な光の反射、および大きな電流を流すことができる。   According to the present invention, the lower electrode of the upper and lower electrode type light emitting diode is joined to one metal substrate or the like or the package electrode, the upper partial electrode of the upper and lower electrode type light emitting diode is joined to one of the metal members, and the other of the metal members. Not only is the bonding of the other such as the package electrode or metal substrate good, but also the area of the metal member is increased, so the bonding strength is improved, the heat dissipation is improved, the light is reflected well, and the current is large Can flow.

本発明によれば、前記上下電極型発光ダイオードあるいは上面電極型発光ダイオードの電極とパッケージ電極との接続にワイヤボンドによる接合を用いないため、接合部から発光層に超音波振動が加わることがなく、マイクロクラックによる不良品の無い発光装置を得ることができる。   According to the present invention, since bonding by wire bonding is not used for connection between the electrode of the upper and lower electrode type light emitting diode or the top electrode type light emitting diode and the package electrode, ultrasonic vibration is not applied to the light emitting layer from the joint portion. A light emitting device free from defective products due to microcracks can be obtained.

（第１発明）
第１発明の発光装置は、少なくとも一対のパッケージ電極と、前記一方のパッケージ電極に載置された上下電極型発光ダイオードと、前記上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極とが接続されている。前記パッケージ電極、上下電極型発光ダイオード、および金属部材との接合は、ハンダによって接合される。前記金属部材は、前記上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極と間をほぼ直線的に張架されて、互いに接続されている。 (First invention)
In the light emitting device of the first invention, at least a pair of package electrodes, an upper and lower electrode type light emitting diode mounted on the one package electrode, an upper partial electrode of the upper and lower electrode type light emitting diode and the other package electrode are connected. Has been. The package electrode, the upper and lower electrode type light emitting diode, and the metal member are joined by solder. The metal member is stretched substantially linearly between the upper partial electrode of the upper and lower electrode type light emitting diode and the other package electrode, and is connected to each other.

前記金属部材は、前記上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極と間を、ほぼ直線的に張架することによってハンダ接合されている。前記金属部材は、ほぼ直線的に張架されているため、前記張架部分が湾曲して突出することがなく、作製工程中に、触れるおそれが少ない。前記ほぼ直線的に張架された金属部材は、接合面との角度が常に均一であるため、少量のハンダペーストで接合強度を安定させることができる。また、前記上下電極型発光ダイオードの上部部分電極と前記金属部材の接合部近傍を、硬化性部材で絶縁処理している。前記硬化性部材は、一液または２液の硬化性樹脂、例えばシリコーン系樹脂やエポキシ系樹脂等の樹脂系部材、金属アルコキシド系の金属酸化物部材を使用することができる。前記絶縁処理をすることにより、ハッケージの組み立て中や使用中の外部の力による金属部材の変形を緩和し、前記上下電極型発光ダイオードの活性層や下部半導体層との接触を防止することができ、また、前記上下電極型発光ダイオードの上面の発光面は、前記硬化性部材で殆ど覆われていないので、発光ダイオードの光を無駄にすることなく放出できるという効果がある。   The metal member is solder-bonded by extending substantially linearly between the upper partial electrode of the upper and lower electrode type light emitting diode and the other package electrode. Since the metal member is stretched substantially linearly, the stretched portion is not curved and protrudes, and there is little risk of touching during the manufacturing process. Since the metal member stretched substantially linearly has a uniform angle with the joining surface, the joining strength can be stabilized with a small amount of solder paste. In addition, the upper portion electrode of the upper and lower electrode type light emitting diode and the vicinity of the joint portion of the metal member are insulated with a curable member. As the curable member, a one-component or two-component curable resin, for example, a resin-based member such as a silicone-based resin or an epoxy-based resin, or a metal alkoxide-based metal oxide member can be used. By performing the insulation treatment, deformation of the metal member due to external force during assembly or use of the package can be mitigated, and contact with the active layer and lower semiconductor layer of the upper and lower electrode type light emitting diode can be prevented. In addition, since the light emitting surface on the upper surface of the upper and lower electrode type light emitting diode is hardly covered with the curable member, the light emitted from the light emitting diode can be emitted without wasting it.

（第２発明）
第２発明の発光装置は、金属部材を金製リボン、あるいは、薄板状に成形された銅、ニッケル、アルミニウム、およびこれらの合金の表面に、金、銀の少なくとも１種がメッキされる。前記金製またはメッキされた金属部材は、光の反射効率、放熱性、ハンダとの濡れ性の改善を同時に達成することができる。 (Second invention)
In the light emitting device according to the second aspect of the invention, at least one of gold and silver is plated on the surface of copper, nickel, aluminum, and an alloy thereof formed by forming a metal member into a gold ribbon or a thin plate shape. The metal member plated or plated can simultaneously improve light reflection efficiency, heat dissipation, and wettability with solder.

（第３発明）
第３発明の発光装置は、第１発明または第２発明における一対のパッケージ電極、上下電極型発光ダイオード、金属部材、および反射枠と蛍光体含有膜体とから少なくとも構成されている。前記反射枠に取り付けられている蛍光体含有膜体は、前記上下電極型発光ダイオードから放射された光が前記蛍光体含有膜体によって所望の色の光となって出力される。前記上下電極型発光ダイオードは、窒化ガリウム系上下電極型発光ダイオードからなり、たとえば、青色ないし紫外線の波長の光を発光する場合、前記蛍光体含有膜体が前記青色ないし紫外光の波長の一部または全部を吸収して、白色光に変換する。前記発光ダイオードは、上下電極型発光ダイオードの代わりに、上面電極発光素子とすることもできる。 (Third invention)
The light emitting device of the third invention comprises at least a pair of package electrodes, upper and lower electrode type light emitting diodes, a metal member, a reflection frame and a phosphor-containing film body in the first or second invention. The phosphor-containing film body attached to the reflection frame outputs light emitted from the upper and lower electrode type light emitting diodes as light of a desired color by the phosphor-containing film body. The upper and lower electrode type light emitting diode is composed of a gallium nitride based upper and lower electrode type light emitting diode. For example, when emitting light having a wavelength of blue to ultraviolet light, the phosphor-containing film body is a part of the wavelength of blue to ultraviolet light. Or it absorbs everything and converts it into white light. The light emitting diode may be a top electrode light emitting element instead of the upper and lower electrode type light emitting diode.

（第４発明）
第４発明の発光装置は、他方のパッケージ電極の高さが一方のパッケージ電極の高さより前記上下電極型発光ダイオードのほぼ厚さに相当する分高く成形されている。すなわち、前記上下電極型発光ダイオードの上部電極と他方のパッケージ電極の高かは、同じであり、金属部材をほぼ水平に設けることができる。 (Fourth invention)
In the light emitting device of the fourth invention, the height of the other package electrode is formed higher than the height of the one package electrode by an amount corresponding to the thickness of the upper and lower electrode type light emitting diode. That is, the upper electrode of the upper and lower electrode type light emitting diode and the height of the other package electrode are the same, and the metal member can be provided substantially horizontally.

図１は本発明の実施例であり、上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極との間に張架された金属部材と上部部分電極との接合を説明するための図である。図１において、たとえば、金属基板（導電膜が形成された導電性基板も含む）１２および金属基板（導電性基板）１４は、互いに対向するように配置され、その間を絶縁部材１３によって絶縁している。また、前記金属基板１２は、上部に上下電極型発光ダイオード１１の下部電極が載置された、図示されていないが、たとえば、金−錫ハンダにより接合されている。   FIG. 1 is an embodiment of the present invention, and is a view for explaining the joining of a metal member stretched between the upper part electrode of the upper and lower electrode type light emitting diode and the other package electrode and the upper part electrode. . In FIG. 1, for example, a metal substrate (including a conductive substrate on which a conductive film is formed) 12 and a metal substrate (conductive substrate) 14 are arranged so as to face each other, and an insulating member 13 insulates between them. Yes. The metal substrate 12 is joined by, for example, gold-tin solder (not shown) on which the lower electrode of the upper and lower electrode type light emitting diodes 11 is placed.

前記上下電極型発光ダイオード１１の上部に設けられている上部部分電極１２１と金属基板１４とは、ほぼ直線的に張架された金属部材１５がハンダ１７、１７′により接合されている。前記金属部材１５は、たとえば、短冊状をした金製リボン、あるいは銅、ニッケル、アルミニウム、およびこれらの合金の上に金および／または銀メッキが施されたリボン状の金属部材から構成されている。   The upper partial electrode 121 provided on the upper and lower electrode type light emitting diodes 11 and the metal substrate 14 are joined to each other by a metal member 15 stretched substantially linearly by solders 17 and 17 '. The metal member 15 is made of, for example, a strip-shaped gold ribbon, or a ribbon-like metal member in which gold and / or silver plating is performed on copper, nickel, aluminum, and an alloy thereof. .

前記金属部材１５は、ほぼ直線的に張架されているため、上下電極型発光ダイオード１１におけるにおける活性層や下部半導体層に接近している。そこで、前記金属部材１５は、前記上下電極型発光ダイオード１１の上部部分電極１２１との接合部近傍を２液熱硬化型シリコーン系樹脂からなる硬化性部材で絶縁処理している。前記金属部材１５は、前記上下電極型発光ダイオード１１の上部部分電極１２１の近傍で、上面電極型発光ダイオード１１の側面を合成樹脂部材１６によって覆っている。前記合成樹脂部材１６は、上下電極型発光ダイオードにおける活性層、あるいは下部半導体層と接近していても、ショート状態になるおそれがない。   Since the metal member 15 is stretched substantially linearly, the metal member 15 is close to the active layer and the lower semiconductor layer in the upper and lower electrode type light emitting diodes 11. Therefore, the metal member 15 is insulated in the vicinity of the joint between the upper and lower electrode type light emitting diodes 11 and the upper partial electrode 121 with a curable member made of a two-component thermosetting silicone resin. The metal member 15 covers the side surface of the top electrode type light emitting diode 11 with the synthetic resin member 16 in the vicinity of the upper partial electrode 121 of the upper and lower electrode type light emitting diode 11. Even if the synthetic resin member 16 is close to the active layer or the lower semiconductor layer in the upper and lower electrode type light emitting diode, there is no possibility of short circuit.

なお、前記上面電極型発光ダイオード１１は、１．０ｍｍ×１．０ｍｍで、厚さが０．１ｍｍから０．１５ｍｍで、金属部材の長さが３．０ｍｍ程度の大きさである。このような大きさの上面電極型発光ダイオード１１は、硬化性部材１６により前記金属部材１５と活性層や下部半導体層との接触を防止するだけでなく、ほぼ直線状の張架を安定させることができる。また、他方のパッケージ電極の高さを前記上下電極型発光ダイオードの略厚み分高くすることにより、前記金属部材をほぼ水平に張架することができ、接触に対して有利になるので好ましい。前記硬化性部材１６は、合成樹脂部材の他に酸化珪素膜のような金属酸化物膜とすることができるだけでなく、前記上下電極型発光ダイオードの発光部を覆って発光量を減衰されないように設ける必要がある。   The top electrode type light emitting diode 11 has a size of 1.0 mm × 1.0 mm, a thickness of 0.1 mm to 0.15 mm, and a metal member having a length of about 3.0 mm. The top electrode type light emitting diode 11 having such a size not only prevents the metal member 15 from being in contact with the active layer and the lower semiconductor layer by the curable member 16 but also stabilizes the substantially linear stretch. Can do. Further, it is preferable that the height of the other package electrode is increased by the thickness of the upper and lower electrode type light emitting diodes, so that the metal member can be stretched almost horizontally, which is advantageous for contact. In addition to the synthetic resin member, the curable member 16 can be not only a metal oxide film such as a silicon oxide film, but also covers the light emitting part of the upper and lower electrode type light emitting diode so that the light emission amount is not attenuated. It is necessary to provide it.

以上、本発明の実施例を詳述したが、本発明は、前記実施例に限定されるものではない。そして、本発明は、特許請求の範囲に記載された事項を逸脱することがなければ、種々の設計変更を行うことが可能である。本発明の発光素子は、実施例として記載された形状以外の公知または周知のものを使用することができる。本発明のハンダは、公知または周知のものが使用される。発光ダイオードは、上面電極型発光ダイオードを採用することもできる。   As mentioned above, although the Example of this invention was explained in full detail, this invention is not limited to the said Example. The present invention can be modified in various ways without departing from the scope of the claims. As the light-emitting element of the present invention, known or well-known elements other than the shapes described as examples can be used. Known or well-known solder is used for the solder of the present invention. A top electrode type light emitting diode can also be adopted as the light emitting diode.

図１は本発明の実施例であり、上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極との間に張架された金属部材と上部部分電極との接合を説明するための図である。（実施例１）FIG. 1 is an embodiment of the present invention, and is a view for explaining the joining of a metal member stretched between the upper part electrode of the upper and lower electrode type light emitting diode and the other package electrode and the upper part electrode. . (Example 1) （イ）は従来の発光素子をパッケージに組み込んだ状態を説明するための上下電極型発光ダイオードを用いた発光装置の概略断面図、（ロ）は従来の発光装置の平面図、（ハ）は前記上下電極型発光ダイオードの断面図である。(A) is a schematic cross-sectional view of a light emitting device using upper and lower electrode type light emitting diodes for explaining a state in which a conventional light emitting element is incorporated in a package, (b) is a plan view of the conventional light emitting device, and (c) is It is sectional drawing of the said upper-and-lower electrode type light emitting diode.

符号の説明Explanation of symbols

１１・・・上下電極型発光ダイオード
１２・・・金属基板（導電性基板）
１２１・・・上部部分電極
１３・・・絶縁部材
１４・・・金属基板
１５・・・金属部材
１６・・・合成樹脂部材
１７、１７′・・・ハンダ 11 ... Vertical electrode type light emitting diode 12 ... Metal substrate (conductive substrate)
121 ... Upper partial electrode 13 ... Insulating member 14 ... Metal substrate 15 ... Metal member 16 ... Synthetic resin member 17, 17 '... Solder

Claims (4)

少なくとも一対のパッケージ電極が設けられたパッケージを用い、前記一方のパッケージ電極に上下電極型発光ダイオードを載置し、前記上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極とが金属部材を介してハンダ接合されている発光装置において、
前記金属部材は、前記上下電極型発光ダイオードの上部部分電極と他方のパッケージ電極との間をほぼ直線的に張架するとともに、前記上下電極型発光ダイオードの上部部分電極と前記金属部材の接合部において、前記金属部材の接合部近傍を、硬化性部材で絶縁処理したことを特徴とする発光装置。 Using a package provided with at least a pair of package electrodes, an upper and lower electrode type light emitting diode is mounted on the one package electrode, and the upper partial electrode of the upper and lower electrode type light emitting diode and the other package electrode are interposed via a metal member In the light emitting device soldered together,
The metal member stretches substantially linearly between the upper partial electrode of the upper and lower electrode type light emitting diode and the other package electrode, and a junction between the upper partial electrode of the upper and lower electrode type light emitting diode and the metal member The light emitting device according to claim 1, wherein the vicinity of the joint portion of the metal member is insulated with a curable member. 前記金属部材は、金製リボン、あるいはリボン状に成形された銅、ニッケル、アルミニウム、およびこれらの合金のいずれかに金、銀の少なくとも１種がメッキされているものであることを特徴とする請求項１に記載の発光装置。   The metal member is a gold ribbon or copper, nickel, aluminum, or an alloy thereof formed in a ribbon shape and plated with at least one of gold and silver. The light emitting device according to claim 1. 反射枠と、前記反射枠の凹部底面に少なくとも一対のパッケージ電極が設けられたパッケージと、
前記反射枠の上面部に取り付けられ、空気層を介して上下電極型発光ダイオードから発光された紫外線ないし青色の光をほぼ白色光に変換する少なくとも一つの蛍光体を含有している蛍光体含有膜体と、
から少なくとも構成されていることを特徴とする請求項１または請求項２に記載の発光装置。 A reflection frame, and a package provided with at least a pair of package electrodes on the bottom surface of the recess of the reflection frame;
A phosphor-containing film that is attached to the upper surface of the reflective frame and contains at least one phosphor that converts ultraviolet or blue light emitted from the upper and lower electrode type light emitting diodes through an air layer into substantially white light Body,
The light-emitting device according to claim 1, wherein the light-emitting device includes at least one of the following. 前記他方のパッケージ電極は、一方のパッケージ電極より前記上下電極型発光ダイオードのほぼ厚さに相当する分高く形成されていることを特徴とする請求項１から請求項３のいずれか１項に記載された発光装置。   4. The device according to claim 1, wherein the other package electrode is formed higher than the one package electrode by an amount corresponding to the thickness of the upper and lower electrode type light emitting diode. 5. Light emitting device.
JP2008243492A 2008-09-24 2008-09-24 Light-emitting device Withdrawn JP2010080465A (en)

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