JP2010056516A - Solid-state imaging device, method of producing the same, and imaging apparatus - Google Patents

Solid-state imaging device, method of producing the same, and imaging apparatus Download PDF

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JP2010056516A
JP2010056516A JP2009037557A JP2009037557A JP2010056516A JP 2010056516 A JP2010056516 A JP 2010056516A JP 2009037557 A JP2009037557 A JP 2009037557A JP 2009037557 A JP2009037557 A JP 2009037557A JP 2010056516 A JP2010056516 A JP 2010056516A
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film
formed
portion
silicide block
imaging device
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JP5493382B2 (en
Inventor
Soichiro Itonaga
Takuji Matsumoto
Hiroyuki Mori
Yutaka Nishimura
Susumu Oki
Keiji Taya
Tetsuji Yamaguchi
進 大木
哲司 山口
拓治 松本
裕之 森
圭司 田谷
総一郎 糸長
豊 西村
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Sony Corp
ソニー株式会社
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Priority to JP2008199518 priority
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Priority to JP2009037557A priority patent/JP5493382B2/en
Priority claimed from TW098122656A external-priority patent/TWI399851B/en
Priority claimed from US12/509,990 external-priority patent/US8115154B2/en
Publication of JP2010056516A publication Critical patent/JP2010056516A/en
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Abstract

The present invention makes it possible to reduce white flaws and dark current by forming a part of two different layers of silicide block films on a MOS transistor in a pixel portion so as to overlap each other.
A semiconductor substrate 11 includes a pixel portion 12 having a photoelectric conversion portion 21 and a peripheral circuit portion 13 formed in the periphery thereof, and is formed of a sidewall formation film on a side wall of a gate electrode 32 of the pixel portion 12. The first sidewall 33 formed, the second sidewall 53 formed of a sidewall formation film on the side wall of the gate electrode 52 of the peripheral circuit section 13, and one of the MOS transistors 30 on the photoelectric conversion section 21 and the pixel section 12. A first silicide block film 71 formed of a sidewall formation film on the portion, and a second silicide block film 72 overlying a part of the first silicide block film 71 on the MOS transistor 30 of the pixel portion 12. The first and second silicide block films 71 and 72 cover the MOS transistor 30 of the pixel portion 12.
[Selection] Figure 1

Description

  The present invention relates to a solid-state imaging device, a manufacturing method thereof, and an imaging device.

  A sidewall having a three-layer structure is formed on the gate electrode of the MOS transistor of the solid-state imaging device, and a film having the same layer as the sidewall of the three-layer structure (hereinafter referred to as a sidewall forming film) is formed on the sensor portion of the solid-state imaging device. A manufacturing method is disclosed which is formed and used for a silicide block which prevents the formation of silicide in a sensor portion (see, for example, Patent Document 1 (particularly FIG. 64 and related description)).

However, in the manufacturing method described in Patent Document 1, in order to form the source / drain region of the MOS transistor, ion implantation for forming the source / drain region is performed through the sidewall formation film having the three-layer structure. Do. For this reason, it has been difficult to improve the short channel effect while suppressing the parasitic resistance.
In addition, since the source / drain regions are annealed in a state of being completely covered with the sidewall formation film having a three-layer structure, stress due to the sidewall formation film is increased (SMT: Stress Memorization Technique (for example, Non-patent document 1)).
Further, it may be necessary to change the ion implantation conditions for forming the source / drain regions of the MOS transistor in the logic portion and the ion implantation conditions for forming the source / drain regions of the MOS transistor in the pixel portion. This is because the MOS transistor in the pixel portion is ion-implanted through the sidewall film, and the MOS transistor in the logic portion is ion-implanted without a through film. Therefore, the diffusion layer depth of the MOS transistor in the logic portion is different from the diffusion layer depth of the MOS transistor in the pixel portion. Therefore, since the MOS transistor in the logic part has a shorter gate length than the MOS transistor in the pixel part, it is possible to improve the short channel effect while suppressing the junction leakage and simultaneously suppress the increase in parasitic resistance. It becomes difficult. Although not described in Patent Document 1, ion implantation for forming the source / drain regions of the MOS transistors in the logic portion and ion implantation for forming the source / drain regions of the MOS transistors in the pixel portion are performed separately. Is natural.

  In addition, when the source / drain region is annealed in a state where a single-layer cover film (cover film) that completely covers the gate electrode is formed, tensile stress (Tensile stress) is applied to the cover film (SMT). ). This film stress (Stress) may cause crystal defects in the silicon layer of the sensor part, causing an increase in random noise, white scratches and dark current.

  As described above, since the ion implantation for forming the source / drain regions is performed through the sidewall formation film, the depth of the silicon (Si) surface is kept high and the desired diffusion layer depth is set. Is difficult. For this reason, the parasitic resistance of the source / drain regions increases, and the driving force of the pixel transistor decreases.

In addition, a manufacturing method is disclosed in which the sidewall forming film is not used as a silicide block film but a silicide block film is newly provided (see, for example, Patent Document 2).
In this manufacturing method, the silicon substrate is easily damaged by the etch back of the sidewall film that is performed when the sidewall is formed on the sidewall of the gate electrode. As a result, there arises a problem that dark current increases.
In this manufacturing method, the oxide film on the photodiode is removed before the ion implantation for forming the source / drain regions, so that the resist mask is directly attached on the photodiode. For this reason, the photodiode is contaminated with the resist, and the dark current increases.
Furthermore, the dark current deteriorates as a result of impurity loss of P-type impurities in the surface region due to wet etching on the photodiode.
During wet etching for removing the oxide film on the photodiode, the amount of etching due to etching on the element isolation region (STI) in the logic portion increases, so that the source / drain is formed at the edge of the element isolation region in the logic portion. When silicide is formed on the region, junction leakage due to silicide deteriorates.
The problem that a part of the sidewall film is lifted off increases when the oxide film on the photodiode is removed. As a result, the yield is reduced.

In a MOS transistor of a solid-state imaging device, when a two-layered sidewall is formed on a sidewall of a gate electrode, the gate electrode is formed on a silicon substrate via a gate insulating film.
Next, a silicon oxide film that covers the gate electrode is formed on the silicon substrate. Further, a silicon nitride film is formed on the silicon oxide film.
Thereafter, the entire surface of the silicon nitride film is etched back to leave a silicon nitride film on the side wall of the gate electrode through the silicon oxide film. In this etch back, the silicon oxide film serves as an etching stopper.
Next, the silicon oxide film is etched. As a result, the gate electrode is exposed and the silicon substrate is exposed. At this time, the silicon oxide film on the photodiode of the solid-state imaging device is also removed.

  In the manufacturing method, as the pixel size and transistor size are reduced, the thickness of the silicon oxide film is reduced. Therefore, it becomes difficult to stop the etching without damaging the underlying silicon substrate during the etch back of the silicon nitride film. In general, it is difficult to obtain a selection ratio for stopping a silicon oxide film when etching a silicon nitride film.

  Further, at the time of removing the silicon oxide film, part of the silicon oxide film is wet-etched up to the bottom of the sidewall formed of the silicon nitride film. For this reason, there is a risk that the sidewall will be in a so-called lift-off state due to subsequent stress (Stress) such as heat treatment, which may cause dust. This can be one of the causes of yield loss.

  When the silicon oxide film is etched, the silicon oxide film on the photodiode of the solid-state imaging device is also removed. Thereafter, ion implantation for forming the source / drain of nFET and pFET is performed, and a resist mask used for the ion implantation is directly attached on the photodiode. For this reason, there is a concern about contamination such as sodium (Na) contained in the resist in the photodiode, resulting in a problem of worsening white scratches.

FIG. 95 shows a layout diagram of the CMOS sensor.
As shown in FIG. 95, a photodiode PD and an active region 15 joined to the photodiode are formed on the silicon substrate 11. In the active region 15, a transfer gate TRG, a reset transistor RST, an amplification transistor Amp, and a selection transistor SEL are sequentially arranged. A floating diffusion portion FD is formed between the transfer gate TRG and the reset transistor RST.
FIG. 96 shows an equivalent circuit of the planar layout. In the layout shown in FIG. 96, the pixel includes one photodiode PD and four transistors: a transfer gate TRG, a floating diffusion portion FD, a reset transistor RST, an amplification transistor Amp, and a selection transistor SEL. This is a type that does not share the photodiode PD, but of course there is a type that shares the photodiode PD and a part that has a 4-transistor configuration and a 3-transistor configuration.

Republished patent WO2003 / 09642 JP 2008-86104 A

K. Ota, et al., "Novel Locally Strained Channel Technique for High Performance 55nm CMOS" IEDM Tech. Dig., Pp27-30, 2002

  The problem to be solved is that it is difficult to reduce random noise, white scratches and dark current.

  The present invention makes it possible to reduce random noise, white scratches, and dark current by forming a part of two different layers of silicide block films on a MOS transistor in a pixel portion.

The solid-state imaging device of the present invention has, on a semiconductor substrate, a pixel unit including a photoelectric conversion unit that photoelectrically converts incident light to obtain an electrical signal, and a peripheral circuit unit formed around the pixel unit,
A first sidewall formed of a sidewall formation film on a sidewall of the gate electrode of the MOS transistor of the pixel portion;
A second sidewall formed on the sidewall of the gate electrode of the MOS transistor of the peripheral circuit portion by a film of the same layer as the sidewall formation film;
The first silicide block film formed of the same layer film as the sidewall formation film on the photoelectric conversion unit and a part of the MOS transistor of the pixel unit;
A second silicide block film overlying a portion of the first silicide block film on the MOS transistor of the pixel portion;
The MOS transistor of the pixel portion is covered with the first silicide block film and the second silicide block film.

  In the solid-state imaging device of the present invention, the first silicide block film formed of the same layer as the sidewall formation film and the second silicide block film formed of a film different from the first silicide block film It is covered with. For this reason, the MOS transistor in the pixel portion is not completely covered with a single silicide block film, so that random noise is reduced, and white scratches and dark current are reduced.

According to the method for manufacturing a solid-state imaging device of the present invention, a pixel unit including a photoelectric conversion unit that photoelectrically converts incident light to obtain an electric signal and a peripheral circuit unit formed around the pixel unit are formed on a semiconductor substrate. When
Forming a sidewall forming film covering the pixel portion and the peripheral circuit portion;
A first sidewall is formed on the sidewall of the gate electrode of the MOS transistor in the pixel portion by the sidewall formation film, and a second sidewall is formed on the sidewall of the gate electrode of the MOS transistor in the peripheral circuit portion by the sidewall formation film. Forming a first silicide block film with the sidewall formation film on the photoelectric conversion portion and a part of the MOS transistor of the pixel portion;
Forming a second silicide block film overlying a part of the first silicide block film on the MOS transistor of the pixel portion;
The first silicide block film and the second silicide block film cover the MOS transistor of the pixel portion.

  In the method for manufacturing a solid-state imaging device of the present invention, the first silicide block film formed of the same layer as the sidewall formation film and the second silicide block film formed of a film different from the first silicide block film Are coated with two layers. For this reason, the MOS transistor in the pixel portion is not completely covered with a single silicide block film, so that random noise is reduced, and white scratches and dark current are reduced.

In the imaging device of the present invention, a condensing optical unit that condenses incident light;
A solid-state imaging device that receives and photoelectrically converts light collected by the condensing optical unit; and
A signal processing unit for processing the photoelectrically converted signal;
The solid-state imaging device
A semiconductor substrate has a pixel portion including a photoelectric conversion portion that photoelectrically converts incident light to obtain an electrical signal, and a peripheral circuit portion formed around the pixel portion,
A first sidewall formed of a sidewall formation film on a sidewall of the gate electrode of the MOS transistor of the pixel portion;
A second sidewall formed on the sidewall of the gate electrode of the MOS transistor of the peripheral circuit portion by a film of the same layer as the sidewall formation film;
A first silicide block film formed of a film of the same layer as the sidewall formation film on the photoelectric conversion unit and a part of the MOS transistor of the pixel unit;
A second silicide block film overlying a portion of the first silicide block film on the MOS transistor of the pixel portion;
The MOS transistor of the pixel portion is covered with the first silicide block film and the second silicide block film.

  In the imaging device of the present invention, since the solid-state imaging device of the present invention is used, random noise is reduced, and white scratches and dark current are reduced.

  The solid-state imaging device of the present invention has advantages that random noise can be reduced and white scratches and dark current can be reduced.

  The manufacturing method of the solid-state imaging device of the present invention has the advantages that random noise can be reduced and white scratches and dark current can be reduced.

  Since the imaging device of the present invention uses the solid-state imaging device of the present invention, random noise of each pixel can be reduced, and white scratches and dark current can be reduced. Therefore, the image quality can be improved.

1 is a schematic cross-sectional view illustrating a first example of a configuration of an embodiment according to a solid-state imaging device of the present invention. 1 is a schematic cross-sectional view illustrating a first example of a configuration of an embodiment according to a solid-state imaging device of the present invention. It is schematic structure sectional drawing which showed the 2nd example of the structure of one Embodiment which concerns on the solid-state imaging device of this invention. It is schematic structure sectional drawing which showed the 2nd example of the structure of one Embodiment which concerns on the solid-state imaging device of this invention. It is the plane layout figure which showed the 1st example and 2nd example of one Embodiment which concern on the solid-state imaging device of this invention. It is manufacturing process sectional drawing (1) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (2) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (3) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (4) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (5) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (6) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (7) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (8) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (9) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (10) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (11) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (12) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (13) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (14) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (15) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (16) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (17) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (18) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (19) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (20) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (21) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (22) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (23) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (24) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (25) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (26) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (27) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (28) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (29) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (30) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (31) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (32) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (33) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is manufacturing process sectional drawing (34) which showed the 1st example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. FIG. 5 is a plan layout diagram illustrating an example of a configuration in which one pixel transistor shares four pixels. It is the plane layout figure which showed the 2nd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 2nd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 2nd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the plane layout figure which showed the 2nd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 2nd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 2nd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is this schematic structure sectional drawing which showed the influence of the etching damage. It is the plane layout figure which showed the 3rd example of one Embodiment which concerns on the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 3rd example of one Embodiment which concerns on the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 3rd example of one Embodiment which concerns on the solid-state imaging device of this invention. It is the plane layout figure which showed the 4th example of one Embodiment which concerns on the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 4th example of one Embodiment which concerns on the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 4th example of one Embodiment which concerns on the solid-state imaging device of this invention. It is the plane layout figure which showed the 3rd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 3rd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 3rd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the plane layout figure which showed the 3rd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 3rd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 3rd example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the plane layout figure which showed the 4th example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 4th example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 4th example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the plane layout figure which showed the 4th example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 4th example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the fragmentary sectional view which showed the 4th example of one Embodiment which concerns on the manufacturing method of the solid-state imaging device of this invention. It is the plane layout figure which showed the modification of the 3rd, 4th example of a solid-state imaging device and its manufacturing method. It is the plane layout figure which showed the modification of the 1st example of a solid-state imaging device and its manufacturing method. It is the fragmentary sectional view which showed the modification of the 1st example of a solid-state imaging device and its manufacturing method. It is the fragmentary sectional view which showed the modification of the 1st example of a solid-state imaging device and its manufacturing method. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of the structure (4-pixel sharing structure) with which one pixel transistor shares 4 pixels. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of a pixel sharing structure. It is manufacturing process sectional drawing which showed the detailed example of the manufacturing method of the solid-state imaging device of 4 pixel shared structure. It is a block diagram showing one embodiment concerning an imaging device of the present invention. It is a layout diagram of a conventional CMOS sensor. It is the equivalent circuit schematic of the planar layout of the conventional CMOS sensor.

  Hereinafter, modes for carrying out the invention (hereinafter referred to as embodiments) will be described.

<1. First Embodiment>
FIG. 5 is a schematic configuration cross-sectional view of a pixel unit in FIG. 1, a schematic configuration cross-sectional view of a peripheral circuit unit in FIG. 2, and FIG. 5 (1), illustrating a first example of a configuration of a solid-state imaging device according to a first embodiment of the present invention. This will be described with reference to a plan layout diagram of the pixel portion. FIG. 5A shows a case where the active regions of the transfer gate TRG, the reset transistor RST, the amplification transistor Amp, and the selection transistor SEL are connected. The pixel portion shown in FIG. 1 and the peripheral circuit portion shown in FIG. 2 are formed on the same semiconductor substrate. Moreover, FIG. 1 shows the AA line cross section in FIG. 5 (1).
Further, a second example of the configuration of the solid-state imaging device according to the first embodiment is illustrated in a schematic configuration cross-sectional view of the pixel portion in FIG. 3, a schematic configuration cross-sectional view of the peripheral circuit portion in FIG. 4, and FIG. This will be described with reference to a plan layout diagram of the pixel portion. FIG. 5B shows the case where the active regions of the transfer gate TRG, the reset transistor RST, the amplification transistor Amp, and the selection transistor SEL are separated by STI. The pixel portion shown in FIG. 3 and the peripheral circuit portion shown in FIG. 4 are formed on the same semiconductor substrate. Moreover, FIG. 3 shows the BB line cross section in FIG. 5 (2).
In order to reduce the pixel size with the same saturation charge amount Qs, the layout of FIG. 5A is desirable.

[First Example of Configuration of Solid-State Imaging Device]
As shown in FIGS. 1, 2, and 5 (1), a pixel unit 12 including a photoelectric conversion unit 21 that photoelectrically converts incident light to obtain an electric signal on a semiconductor substrate 11, and the periphery of the pixel unit 12 The peripheral circuit portion 13 is formed.
A photoelectric conversion unit 21 is formed on the semiconductor substrate 11 of the pixel unit 12, and a transfer gate TRG, a reset transistor RST, an amplification transistor Amp, and a selection transistor SEL are sequentially formed in series in connection with the photoelectric conversion unit 21. Yes. The photoelectric conversion unit 21 is composed of, for example, a photodiode.

On the side walls of the gate electrodes 32 of the MOS transistors 30 (transfer gate TRG, reset transistor RST, amplification transistor Amp, selection transistor SEL) of the pixel section 12, a first side wall 33 is formed of a side wall forming film. .
A second side wall 53 is formed on the side wall of the gate electrode 52 of each MOS transistor 50 of the peripheral circuit portion 13 with a film in the same layer as the wiring side wall forming film.
Further, a first silicide block film 71 is formed on the photoelectric conversion portion 21 as a film in the same layer as the sidewall formation film.
Further, a second silicide block film 72 is formed on each MOS transistor 30 of the pixel portion 12 so as to overlap a part of the first silicide block film 71.
The first silicide block film 71 has a laminated structure of, for example, a silicon oxide film and a silicon nitride film.
The second silicide block film 72 has a stacked structure of, for example, a silicon oxide film and a silicon nitride film.
The pixel portion 12 is covered with the first silicide block film 71 and the second silicide block film 72. An overlapping portion of the first silicide block film 71 and the second silicide block film 72 is formed in the pixel portion 12.

  In each MOS transistor 50 of the peripheral circuit section 13, silicide layers 56 and 57 are formed on the gate electrode 52 and the source / drain regions 54 and 55, for example. Thus, each MOS transistor 50 of the peripheral circuit 13 is silicided in order to reduce parasitic resistance and operate at high speed.

In addition, a first element isolation region 14 that isolates the pixel portion 12 is formed in the semiconductor substrate 11, and a second element isolation region 15 that isolates a formation region of each MOS transistor in the peripheral circuit portion 13 is formed. Has been.
Both the first element isolation region 14 and the second element isolation region 15 have an STI structure, and the first element isolation region 14 is shallower than the second element isolation region 15 and onto the semiconductor substrate 11. The protruding height of is formed low.

  As described above, in the solid-state imaging device 1 (1A), the region where the first silicide block film 71 is formed using the sidewall formation film and the second silicide formed by separately providing the silicide block insulating film. A region where the block film 72 is formed and a region where the silicide layers 56 and 57 are present, such as the MOS transistor 50 of the peripheral circuit unit 13, are mixed. A first silicide block film 71 is formed on the photoelectric conversion unit 21 by using a sidewall formation film.

[Second Example of Configuration of Solid-State Imaging Device]
3, 4, and 5 (2), the pixel unit 12 includes a photoelectric conversion unit 21 that photoelectrically converts incident light to obtain an electrical signal on the semiconductor substrate 11, and the pixel unit 12. The peripheral circuit portion 13 is formed around the periphery.
A photoelectric conversion unit 21 is formed on the semiconductor substrate 11 of the pixel unit 12, and a transfer gate TRG, a reset transistor RST, an amplification transistor Amp, and a selection transistor SEL are sequentially formed in series in connection with the photoelectric conversion unit 21. Yes. The photoelectric conversion unit 21 is composed of, for example, a photodiode.

On the side walls of the gate electrodes 32 of the MOS transistors 30 (transfer gate TRG, reset transistor RST, amplification transistor Amp, selection transistor SEL) of the pixel section 12, a first side wall 33 is formed of a side wall forming film. .
A second side wall 53 is formed on the side wall of the gate electrode 52 of each MOS transistor 50 of the peripheral circuit portion 13 with a film in the same layer as the wiring side wall forming film.
Further, a first silicide block film 71 is formed on the photoelectric conversion portion 21 as a film in the same layer as the sidewall formation film.
Further, a second silicide block film 72 is formed on each MOS transistor 30 of the pixel portion 12 so as to overlap a part of the first silicide block film 71.
The first silicide block film 71 has a laminated structure of, for example, a silicon oxide film and a silicon nitride film.
The second silicide block film 72 has a stacked structure of, for example, a silicon oxide film and a silicon nitride film.
The pixel portion 12 is covered with the first silicide block film 71 and the second silicide block film 72. An overlapping portion of the first silicide block film 71 and the second silicide block film 72 is formed in the pixel portion 12.

  In each MOS transistor 50 of the peripheral circuit section 13, silicide layers 56 and 57 are formed on the gate electrode 52 and the source / drain regions 54 and 55, for example. Thus, each MOS transistor 50 of the peripheral circuit 13 is silicided in order to reduce parasitic resistance and operate at high speed.

The semiconductor substrate 11 is formed with a first element isolation region 14 that isolates the formation region of each MOS transistor in the pixel portion 12, and separates the formation region of each MOS transistor in the peripheral circuit portion 13. A second element isolation region 15 is formed.
Both the first element isolation region 14 and the second element isolation region 15 have an STI structure, and the first element isolation region 14 is shallower than the second element isolation region 15 and onto the semiconductor substrate 11. The protruding height of is formed low.

  As described above, in the solid-state imaging device 1 (1B), the region where the first silicide block film 71 is formed using the sidewall formation film and the second silicide formed by separately providing the silicide block insulating film. A region where the block film 72 is formed and a region where the silicide layers 56 and 57 are present, such as the MOS transistor 50 of the peripheral circuit unit 13, are mixed. A first silicide block film 71 is formed on the photoelectric conversion unit 21 by using a sidewall formation film.

  In the solid-state imaging device 1 (1A, 1B), it is desirable that the first silicide block film 71 and the second silicide block film are completely formed in the pixel unit 12 in order to suppress impurity contamination due to silicide and generation of defects. 72 and is preferably covered. Further, the first and second silicide block films 71 and 72 may not be formed on the element isolation regions 14 and 15. However, it is necessary to increase the light receiving area of the photoelectric conversion unit 21 as much as possible with the same pixel size, increase the saturation charge amount (Qs), and reduce the influence of noise. Therefore, it is desirable that the element isolation region is also covered with the first silicide block film 71 and the second silicide block film 72 so that it is not necessary to consider the alignment margin on the element isolation region. By doing so, the area of the element isolation region can be reduced, and the light receiving area of the photoelectric conversion unit 21 can be increased.

Therefore, in the layout of the solid-state imaging device 1, a portion where the first and second silicide block films 71 and 72 overlap is provided in order to reduce the isolation width of the element isolation region and increase the proportion of the photodiode. Yes. For this reason, the step on each gate electrode 32 of the pixel portion 12 becomes large, and the flatness of the interlayer insulating film becomes severe.
For example, in the separation technique described in Japanese Patent Application Laid-Open No. 2005-347325, the amount of protrusion from the silicon (Si) surface of the oxide film separation in the pixel increases, and the difficulty of flatness increases.
In the present invention, a first element isolation region 14 having an STI (Shallow Trench Isolation) structure is used to reduce the height of protrusion on the semiconductor substrate 11. However, if the STI depth of the first element isolation region 14 is the same as the STI depth of the second element isolation region 15 of the peripheral circuit unit 13, stress or etching damage to the photodiode constituting the photoelectric conversion unit 21 is obtained. Increases, resulting in an increase in white scratches. For this reason, the first element isolation region 14 is formed shallower than the second element isolation region 15 of the peripheral circuit section 13. In order to realize high-speed operation, the STI depth of the second element isolation region 15 of the peripheral circuit unit 13 is increased to reduce the parasitic capacitance between the wiring and the substrate.

  In the solid-state imaging device 1 (1A) of the present invention, the first silicide block film 71 formed of the same layer as the sidewall formation film and the second silicide film 71 formed of a film different from the first silicide block film 71 are used. The pixel portion 12 is covered with two layers of the silicide block film 72. For this reason, since the MOS transistor 30 of the pixel portion 12 is not completely covered with the single layer silicide block film, there is an advantage that random noise is reduced and white scratches / dark current can be reduced.

<2. Second Embodiment>
[First Example of Manufacturing Method of Solid-State Imaging Device]
Next, a first example of an embodiment according to a method for manufacturing a solid-state imaging device of the present invention will be described with reference to manufacturing process cross-sectional views of FIGS.

As shown in FIG. 6A, for example, a silicon substrate is used as the semiconductor substrate 11.
A pad oxide film 111 and a silicon nitride film 112 are formed on the semiconductor substrate 11.
The pad oxide film 111 is formed by oxidizing the surface of the semiconductor substrate 11 by, for example, a thermal oxidation method. The pad oxide film 111 is formed with a thickness of 15 nm, for example.
Next, a silicon nitride film 112 is formed on the pad oxide film 111 by, for example, LP-CVD (Low Pressure CVD). The silicon nitride film 112 is formed with a thickness of 160 nm, for example.
In the configuration described above, the structure is a silicon nitride film / pad oxide film, but may be a structure of silicon nitride film / polysilicon film or amorphous silicon film / pad oxide film.

Next, as shown in FIG. 7B, a resist mask (not shown) having an opening is formed on the silicon nitride film 112 over a region where an element isolation region is to be formed, and then the nitridation is performed by etching. Openings 113 are formed in the silicon film 112 and the pad oxide film 111.
In the etching, for example, a reactive ion etching (RIE) apparatus or an electron cyclotron resonance (ECR) etching apparatus can be used. After the processing, the resist mask is removed by an ashing device or the like.

Next, as shown in FIG. 8C, element isolation trenches 114 are formed in the semiconductor substrate 11 using the silicon nitride film 112 as an etching mask. For this etching, for example, an RIE apparatus or an ECR etching apparatus is used.
First, the first etching of the second element isolation trench 115 (and the first element isolation trench 114) of the peripheral circuit portion 13 (and the pixel portion 12) is performed. At this time, the depths of the first and second element isolation grooves 114 and 115 of the peripheral circuit unit 13 (and the pixel unit 12) are 50 nm to 160 nm.
Although not shown in the drawing, a resist mask is formed on the pixel portion 12, and second etching is performed to extend the element isolation groove 115 only in the peripheral circuit portion 13, and the depth of the second element isolation groove 115 is increased only in the peripheral circuit portion 13. For example, it forms in 0.3 micrometer. Thereafter, the resist mask is removed.

  Thus, by making the element isolation groove 114 of the pixel portion 12 shallow, there is an effect of suppressing white scratches due to etching damage. By making the element isolation trench 114 shallow, the effective photoelectric conversion area increases, so that the saturation charge amount (Qs) is increased.

Next, although not shown, a liner film is formed. This liner film is formed by thermal oxidation at about 800 ° C. to 900 ° C., for example. The liner film may be a silicon oxide film, a silicon oxide film containing nitrogen, or a CVD silicon nitride film. The film thickness is about 4 nm to 10 nm.
Although not shown, boron (B) for suppressing dark current is ion-implanted into the pixel portion 12 using a resist mask. As an example of the ion implantation conditions, the implantation energy is set to about 10 keV, and the dose is set to 1 × 10 12 / cm 2 to 1 × 10 14 / cm 2 . Around the first element isolation trench 114 where the element isolation region in the pixel portion 12 is formed, the dark current is suppressed and the parasitic transistor operation is suppressed as the boron concentration is higher. However, if the boron concentration is too high, the area of the photodiode forming the photoelectric conversion portion is reduced, and the saturation charge amount (Qs) is reduced.

Next, as shown in FIG. 9 (4), an insulating film is formed on the silicon nitride film 112 so as to fill the inside of the second element isolation groove 115 (and the first element isolation groove 114). This insulating film is formed by depositing silicon oxide by, for example, high density plasma CVD.
Next, the excessive insulating film on the silicon nitride film 112 is removed by, for example, chemical mechanical polishing (CMP), and left inside the second element isolation groove 115 (first element isolation groove 114). Then, the second element isolation region 15 (first element isolation region 14) is formed of the insulating film. In the CMP, the silicon nitride film 112 serves as a stopper to stop the CMP.
The first element isolation region 14 is formed shallower than the second element isolation region 15 of the peripheral circuit portion 13, but since the stopper of the silicon nitride film 112 is the same, the protruding amount of element isolation is set to be the same. Is done. Here, the protrusion height of the first element isolation region 14 and the second element isolation region 15 having the same protrusion height is defined to be the same protrusion height as long as it is within a range of processing variation based on manufacturing processing accuracy. . That is, the film thickness of the silicon nitride film 112 used as a mask in trench processing is generally about 160 nm, and the in-plane variation of the wafer is about ± 10%. Polishing variation due to CMP (chemical mechanical polishing) is also about ± 20 to 30 nm. Therefore, even if the pixel unit 12 and the peripheral circuit unit 13 are designed to be the same, the pixel unit 12 and the peripheral circuit unit 13 may vary by about 20 nm to 30 nm. When the pixel portion 12 and the peripheral circuit portion 13 are compared with each other somewhere in the chip surface by observing strictly, even if the protrusion height is not completely the same, the difference between the protrusion heights in the pixel portion and the peripheral circuit portion is 30 nm. If it falls within the range, it goes without saying that it falls within the category of “same height” in the present invention.
Finally, the height of the protruding amount of the first element isolation region 14 and the second element isolation region 15 is set to a low center condition of about 0 to 20 nm from the silicon surface as an example.

Next, as shown in FIG. 10 (5), in order to adjust the height of the first element isolation region 14 from the surface of the semiconductor substrate 11, wet etching of the oxide film is performed. The etching amount of the oxide film is set to 40 nm to 100 nm, for example.
In the present invention, a first element isolation region 14 having an STI (Shallow Trench Isolation) structure is used to reduce the height of protrusion on the semiconductor substrate 11. However, if the STI depth of the first element isolation region 14 is the same as that of the STI of the second element isolation region 15 of the peripheral circuit unit 13, stress or etching on the photodiode constituting the photoelectric conversion unit 21 is performed. Damage increases and white scratches increase. For this reason, the first element isolation region 14 is formed shallower than the second element isolation region 15 of the peripheral circuit section 13. In order to realize high-speed operation, the STI depth of the second element isolation region 15 of the peripheral circuit unit 13 is increased to reduce the parasitic capacitance between the wiring and the substrate.
Next, the silicon nitride film 112 (see FIG. 7 (4)) is removed, and the pad oxide film 111 is exposed. The silicon nitride film 112 is removed by wet etching using hot phosphoric acid, for example.

Next, as shown in FIG. 11 (6), ion implantation is performed in a state where a pad oxide film 111 is formed using a resist mask (not shown) having an opening on a region where a p-well is to be formed. A p-well 121 is formed in the semiconductor substrate 11. Further, channel ion implantation is performed. Thereafter, the resist mask is removed.
Further, an n well 123 is formed in the semiconductor substrate 11 by ion implantation in a state where the pad oxide film 111 is formed using a resist mask (not shown) provided with an opening on a region where an n well is to be formed. . Further, channel ion implantation is performed. Thereafter, the resist mask is removed.
The p-well 121 is formed by using boron (B) as an ion implantation species, setting the implantation energy to, for example, 200 keV, and setting the dose to, for example, 1 × 10 13 cm −2 . In the channel ion implantation of the p-well 121, boron (B) is used as an ion implantation species, the implantation energy is set to, for example, 10 keV to 20 keV, and the dose is set to, for example, 1 × 10 11 cm −2 to 1 × 10 13 cm −2 . And do it.
The n-well 123 is formed by using, for example, phosphorus (P) as an ion implantation species, setting the implantation energy to 200 keV, and setting the dose to 1 × 10 13 cm −2 , for example. The channel ion implantation of the n-well 123 uses, for example, arsenic (As) as an ion implantation species, an implantation energy of, for example, 100 keV, and a dose of, for example, 1 × 10 11 cm −2 to 1 × 10 13 cm −2. Do it.
Although not shown, ion implantation for forming a photodiode in the photoelectric conversion portion is performed next to form a p-type region. For example, boron (B) ions are implanted into the surface of the semiconductor substrate on which the photoelectric conversion portion is formed, arsenic (As) or phosphorus (P) is implanted into a deep region, and the p-type region is formed. An n-type region is formed to be bonded to the lower part of the substrate. In this way, a pn junction photoelectric conversion part is formed.

Next, as shown in FIG. 12 (7), the pad oxide film 111 (see FIG. 11 (6)) is removed by, for example, wet etching.
Next, a thick gate insulating film 51H for high voltage is formed on the semiconductor substrate 11. The film thickness is about 7.5 nm for the transistor for power supply voltage 3.3 V and about 5.5 nm for the transistor for 2.5 V. Next, a resist mask (not shown) is formed on the high-voltage thick gate insulating film 51H, and the thick gate insulating film 51H formed in the low-voltage transistor region is removed.
After removing the resist mask, a thin gate insulating film 51L is formed on the semiconductor substrate 11 in the low voltage transistor region. The film thickness is about 1.2 nm to 1.8 nm for a transistor for a power supply voltage of 1.0 V. At the same time, a thin gate insulating film 31 (not shown) is also formed in the transistor formation region of the pixel portion.
The gate insulating films 51H, 51L, and 31 are formed of, for example, a thermal silicon oxide film. Alternatively, a silicon oxynitride film using RTO (Rapid Thermal Oxidation) may be used. In order to further reduce gate leakage, a high dielectric film such as an oxide film such as hafnium (Hf) or zirconium (Zr) or an oxynitride film may be used.
Thereafter, in the drawing, for the sake of convenience, the thick gate insulating film 51H and the thin gate insulating film 51L are drawn to the same film thickness.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 13 (8) and the cross-sectional view of the peripheral circuit portion in FIG. 14 (9), a gate electrode is formed on the gate insulating film 51 (51H, 51L) and the gate insulating film 31. A formation film 131 is formed. The gate electrode formation film 131 is formed by depositing polysilicon by, for example, LP-CVD. The deposited film thickness is 150 nm to 200 nm at the 90 nm node, although it depends on the technology node.
In addition, the film thickness tends to become thinner at each node because the gate aspect ratio is generally not increased from the controllability of processing.
As a gate depletion countermeasure, silicon germanium (SiGe) may be used instead of polysilicon. This gate depletion means that as the thickness of the gate oxide film becomes thinner, not only the physical gate oxide film thickness but also the influence of the thickness of the depletion layer in the gate polysilicon cannot be ignored. This is a problem that the effective gate oxide film thickness is not reduced and the transistor performance is degraded.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 15 (10) and the cross-sectional view of the peripheral circuit portion in FIG. 16 (11), gate depletion measures are taken. First, a resist mask 132 is formed on the formation region of the pMOS transistor, and the gate electrode formation film 131 in the formation region of the nMOS transistor is doped with an n-type impurity. This doping is performed by ion implantation of, for example, phosphorus (P) or arsenic (As). The ion implantation amount is about 1 × 10 15 / cm 2 to 1 × 10 16 / cm 2 . Thereafter, the resist mask 132 is removed.
Next, although not shown, a resist mask (not shown) is formed on the nMOS transistor formation region, and the gate electrode formation film 131 in the pMOS transistor formation region is doped with a p-type impurity. This doping is performed by ion implantation of, for example, boron (B), boron difluoride (BF 2 ), or indium (In). The ion implantation amount is about 1 × 10 15 / cm 2 to 1 × 10 16 / cm 2 . Thereafter, the resist mask is removed.
Either of the ion implantations may be performed first.
Further, in each of the above ion implantations, nitrogen (N 2 ) ion implantation may be combined in order to prevent the implanted ions from penetrating directly under the gate insulating film.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 17 (12) and the cross-sectional view of the peripheral circuit portion in FIG. 18 (13), a resist mask for forming each gate electrode on the gate electrode formation film 131. (Not shown). The gate electrode forming film 131 is etched by reactive ion etching using the resist mask as an etching mask to form gate electrodes 32 of the MOS transistors in the pixel portion 12 and gate electrodes of the MOS transistors in the peripheral circuit portion 13. 52 is formed.
Next, the surface of each of the gate electrodes 32 and 52 is oxidized to form an oxide film 133.
The film thickness of the oxide film 133 is, for example, 1 nm to 10 nm. The oxide film 133 is also formed on the upper surface together with the side walls of the gate electrodes 32 and 52.
Furthermore, the oxide film withstand voltage can be improved by rounding the edge portions of the gate electrodes 32 and 52 by the oxidation step.
Further, etch damage can be reduced by performing the heat treatment.
In the gate electrode processing, even if the gate insulating film formed on the photoelectric conversion unit 21 is removed, the oxide film 133 is formed on the photoelectric conversion unit 21. For this reason, when a resist film is formed in the lithography process of the next process, since it is not directly attached to the silicon surface, contamination by this resist can be prevented. Therefore, for the photoelectric conversion unit 21 of the pixel unit 12, it becomes a measure for preventing white scratches.

  Next, as shown in the cross-sectional view of the pixel portion in FIG. 19 (14) and the cross-sectional view of the peripheral circuit portion in FIG. 20 (15), the LDD regions 38 and 39 of each MOS transistor of the pixel portion 12 are formed. Then, LDD regions 61, 62, 63, 64, etc. of the MOS transistors of the peripheral circuit section 13 are formed.

First, for the NMOS transistor formed in the peripheral circuit section 13, pocket diffusion layers 65 and 66 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52 (52N). The pocket diffusion layers 65 and 66 are formed by ion implantation. For example, boron difluoride (BF 2 ), boron (B), or indium (In) is used as the ion implantation species, and the dose amount is, for example, 1 × 10 12 / set to cm 2 ~1 × 10 14 / cm 2.
Further, LDD regions 61 and 62 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52 (52N). The LDD regions 61 and 62 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is, for example, 1 × 10 13 / cm 2 to 1 × 10 15 / cm 2 . Set.

With respect to the MOS transistor formed in the pixel portion 12, LDD regions 38 and 39 are formed in the semiconductor substrate 11 on both sides of each gate electrode 32. The LDD regions 38 and 39 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is, for example, 1 × 10 13 / cm 2 to 1 × 10 15 / cm 2 . Set. Further, a pocket diffusion layer may be formed.
With respect to the MOS transistor formed in the pixel portion 12, the LDD region may not be formed from the viewpoint of process reduction. Alternatively, it may also serve as LDD ion implantation of a MOS transistor formed in the peripheral circuit section 13.

Regarding the formation region of the PMOS transistor in the peripheral circuit portion 13, pocket diffusion layers 67 and 68 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52. The pocket diffusion layers 67 and 68 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as the ion implantation species, and the dose amount is, for example, 1 × 10 12 / cm 2 to 1 × 10 14 / cm. Set to 2 .
Further, LDD regions 63 and 64 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52 (52P). The LDD regions 63 and 64 are formed by ion implantation. For example, boron difluoride (BF 2 ), boron (B), or indium (In) is used as the ion implantation species, and the dose amount is, for example, 1 × 10 13 / cm 2. Set to ˜1 × 10 15 / cm 2 .

  Further, pre-amorphization may be performed by implanting germanium (Ge) as a channeling suppression technique for implantation before pocket ion implantation of the NMOS transistor and PMOS transistor in the peripheral circuit portion. Further, after the formation of the LDD region, an RTA (Rapid Thermal Annealing) process of about 800 ° C. to 900 ° C. may be added in order to reduce implantation defects that cause TED (Transient Enhanced Diffusion) or the like.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 21 (16) and the cross-sectional view of the peripheral circuit portion in FIG. 22 (17), a silicon oxide (SiO 2 ) film is formed on the entire surface of the pixel portion 12 and the peripheral circuit portion 13. 134 is formed. The silicon oxide film 134 is formed of a deposited film such as non-doped silicate glass (NSG), LP-TEOS (Tetra Ethyl Ortho Silicate), or high temperature oxidation (HTO) film. The silicon oxide film 134 is formed with a film thickness of, for example, 5 nm to 20 nm.
Next, a silicon nitride film 135 is formed on the silicon oxide film 134. As the silicon nitride film 135, for example, a silicon nitride film formed by LPCVD is used. The film thickness is, for example, 10 nm to 100 nm.
The silicon nitride film 135 may be an ALD silicon nitride film formed by an atomic layer deposition method that can be formed at a low temperature.
Since the silicon oxide film 134 immediately below the silicon nitride film 135 has a smaller thickness on the photoelectric conversion unit 21 of the pixel unit 12, light reflection is prevented, so that the sensitivity of the photoelectric conversion unit 21 is improved.
Next, a third silicon oxide (SiO 2 ) film 136 is deposited on the silicon nitride film 135 as necessary. The silicon oxide film 136 is formed of a deposited film such as NSG, LP-TEOS, or HTO. The silicon oxide film 136 is formed to a thickness of 10 nm to 100 nm, for example.

  Therefore, the sidewall formation film 137 is a three-layer structure film of silicon oxide film 136 / silicon nitride film 135 / silicon oxide film 134. The sidewall formation film 137 may be a two-layer structure film of silicon nitride film / silicon oxide film. Hereinafter, the sidewall formation film 137 having a three-layer structure film will be described.

  Next, as shown in the cross-sectional view of the pixel portion in FIG. 23 (18) and the cross-sectional view of the peripheral circuit portion in FIG. 24 (19), the silicon oxide film 136 formed in the uppermost layer is etched back, It is left only on the side of each gate electrode 32, 52, etc. The etch back is performed by, for example, reactive ion etching (RIE). In this etch back, the etching is stopped at the silicon nitride film 135. In this way, since etching is stopped at the silicon nitride film 135, etch damage to the photoelectric conversion unit 21 of the pixel unit 12 can be reduced, and thus white scratches can be reduced.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 25 (20) and the cross-sectional view of the peripheral circuit portion in FIG. 26 (21), the entire surface on the photoelectric conversion portion 21 of the pixel portion 12 and the one on the transfer gate TRG. A resist mask 138 is formed so as to cover the portion.
Thereafter, the silicon nitride film 135 and the silicon oxide film 134 are etched back, and the first sidewall 33 including the silicon oxide film 134, the silicon nitride film 135, and the silicon oxide film 136 is formed on the side wall portions of the gate electrodes 32 and 52. Then, the second sidewall 53 is formed. At this time, since the silicon nitride film 135 and the silicon oxide film 134 on the photoelectric conversion portion 21 are covered with the resist mask 138, they are not etched.

Next, as shown in the cross-sectional view of the pixel portion of FIG. 27 (22) and the cross-sectional view of the peripheral circuit portion of FIG. 28 (23), a resist mask (FIG. The deep source-drain regions 54 (54N) and 55 (55N) are formed in the NMOS transistor forming region of the peripheral circuit section 13 by ion implantation. That is, the source / drain regions 54N and 55N are formed on the semiconductor substrate 11 on both sides of each gate electrode 52 through the LDD regions 58 and 59, etc. The source / drain regions 54N and 55N are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is 1 × 10 15 / cm 2 to 1 × 10 16 / Set to cm 2 . Thereafter, the resist mask is removed.

Next, a resist mask (not shown) having an opening on the formation region of the NMOS transistor in the pixel portion 12 is formed, and using this, a deep source / drain (in the region of formation of the NMOS transistor in the pixel portion 12) is formed by ion implantation. Deep Source-Drain) regions 34 and 35 are formed. That is, the source / drain regions 34 and 35 are formed in the semiconductor substrate 11 on both sides of each gate electrode 32 through the LDD regions 38.39 and the like. Here, the source / drain region 35 adjacent to the transfer gate TRG functions as a floating diffusion. The source / drain regions 34 and 35 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is 1 × 10 15 / cm 2 to 1 × 10 16 / Set to cm 2 . Thereafter, the resist mask is removed.
This ion implantation can also serve as ion implantation for forming the source / drain regions 54N and 55N of the NMOS transistor in the peripheral circuit portion.
In the formation of the source / drain regions described in International Publication WO2003 / 096421 described in the prior art, both the ion implantation through the three layers and the ion implantation in the state where the film is not formed are combined. It is difficult.

Next, a resist mask (not shown) having an opening over the PMOS transistor formation region of the peripheral circuit portion 13 is formed, and using this, a deep source region is formed in the PMOS transistor formation region of the peripheral circuit portion 13 by ion implantation. Drain (Deep Source-Drain) regions 54 (54P) and 55 (55P) are formed. That is, the source / drain regions 54P and 55P are formed on the semiconductor substrate 11 on both sides of each gate electrode 52 via the LDD regions 60 and 61, etc. The source / drain regions 54P and 55P are formed by ion implantation. For example, boron (B) or boron difluoride (BF 2 ) is used as an ion implantation species, and the dose is 1 × 10 15 / cm 2 to 1 for example. Set to × 10 16 / cm 2 . Thereafter, the resist mask is removed.
Next, activation annealing of each source / drain region is performed. This activation annealing is performed at about 800 ° C. to 1100 ° C., for example. As an apparatus for performing this activation annealing, for example, an RTA (Rapid Thermal Annealing) apparatus, a spike-RTA apparatus, or the like can be used.

Prior to the activation annealing of the source / drain regions, a sidewall formation film 137 covering the photoelectric conversion portion 21 is formed on the gate electrode 32 of the MOS transistor of the pixel portion 12 by the sidewall formation film 137. It is separated from the side wall 33. For this reason, there is no deterioration due to stress caused by SMT (Stress Memorization Technique) described in the prior art.
Therefore, white scratches, random noise, etc. can be improved.
Further, the photoelectric conversion portion 21 is covered with a sidewall formation film 137, and a resist mask at the time of ion implantation for forming the source / drain regions is formed on the photoelectric conversion portion 21 via the sidewall formation film 137. Therefore, it is not directly attached to the surface of the photoelectric conversion unit 21. For this reason, since the photoelectric conversion unit 21 is not contaminated by the contaminant in the resist, it is possible to suppress an increase in white scratches, dark current, and the like.
Further, since ion implantation for forming the source / drain regions is not ion implantation through a film, the depth can be set with the surface concentration being increased. For this reason, an increase in the series resistance of the source / drain regions can be suppressed.
Further, the sidewall formation film 137 covering the photoelectric conversion portion 21 is used as the first silicide block film 71 in the subsequent process.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 29 (24) and the cross-sectional view of the peripheral circuit portion in FIG. Form. The second silicide block film 72 is a laminated film of a silicon oxide (SiO 2 ) film 138 and a silicon nitride (Si 3 N 4 ) film 139. For example, the silicon oxide film 138 is formed with a film thickness of, for example, 5 nm to 40 nm, and the silicon nitride film 139 is formed with a film thickness of, for example, 5 nm to 60 nm.
As the silicon oxide film 138, an NSG, LP-TEOS, HTO film, or the like is used. As the silicon nitride film 139, ALD-SiN, plasma nitride film, LP-SiN, or the like is used. If the film formation temperature of the two-layer film is high, boron is deactivated in the gate electrode of the PMOSFET, and the current driving capability of the PMOSFET is reduced due to gate depletion. Therefore, it is desirable that the deposition temperature is relatively lower than that of the sidewall formation film 137. The film forming temperature is desirably 700 ° C. or lower, for example.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 31 (26) and the cross-sectional view of the peripheral circuit portion in FIG. 32 (27), a resist is formed so as to substantially cover the MOS transistor formation region of the pixel portion 12. A mask 141 is formed. Using the resist mask 141 as an etching mask, the second silicide block film 72 on the photoelectric conversion unit 21 (including part of the transfer gate TRG) of the pixel unit 12 and the peripheral circuit unit 13 is removed by etching. To do.
As a result, the silicon nitride film 135 and the silicon oxide film 134 are formed on the photoelectric conversion unit 21 from the upper layer, and spectral ripples can be prevented. On the other hand, when the above etching is not performed, the photoelectric conversion unit 21 has a structure of a silicon nitride film 139, a silicon oxide film 138, a silicon nitride film 135, and a silicon oxide film 134 from the upper layer, and incident light is multiple-reflected. Spectral ripple characteristics deteriorate. Since the ripple characteristic is deteriorated, the dispersion of the spectrum of Chip to Chip is increased. Therefore, in this embodiment, the second silicide block film 72 on the photoelectric conversion unit 21 is intentionally peeled off.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 33 (28) and the cross-sectional view of the peripheral circuit portion in FIG. 34 (29), on the source / drain regions 54 and 55 of the MOS transistors 50 in the peripheral circuit portion 13 Silicide layers 56, 57 and 58 are formed on the gate electrode 52.
For the silicide layers 56, 57, 58, cobalt silicide (CoSi 2 ), nickel silicide (NiSi), titanium silicide (TiSi 2 ), platinum silicide (PtSi), tungsten silicide (WSi 2 ), or the like is used.
As an example of forming the silicide layers 56, 57, and 58, an example of forming nickel silicide will be described below.
First, a nickel (Ni) film is formed on the entire surface. This nickel film is formed to a thickness of, for example, 10 nm using, for example, a sputtering apparatus. Next, annealing is performed at about 300 ° C. to 400 ° C., the nickel film and the base are reacted with silicon to form a nickel silicide layer. Thereafter, unreacted nickel is removed by wet etching. By this wet etching, silicide layers 56, 57, and 58 are formed in a self-aligned manner only on the silicon or polysilicon surface other than the insulating film.
Thereafter, annealing is performed again at about 500 ° C. to 600 ° C. to stabilize the nickel silicide layer.
In the silicidation step, no silicide layer is formed on the source / drain regions 34 and 35 of the MOS transistor of the pixel portion 12 and the gate electrode 32. This is to eliminate white scratches and increase in dark current due to diffusion of silicide metal up to the photoelectric conversion portion 21.
Therefore, unless the impurity concentration on the surface of the source / drain regions 34 and 35 of the MOS transistor of the pixel portion 12 is increased, the contact resistance increases drastically. In this embodiment, since the impurity concentration on the surface of the source / drain regions 34 and 35 can be increased, there is an advantage that an increase in contact resistance can be relatively suppressed.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 35 (30) and the cross-sectional view of the peripheral circuit portion in FIG. 36 (31), an etching stopper film 74 is formed on the entire surface of the pixel portion 12 and the peripheral circuit portion 13. To do. The etch back stopper film 74 is formed of, for example, a silicon nitride film. As this silicon nitride film, for example, a silicon nitride film formed by a low pressure CVD method or a silicon nitride film formed by a plasma CVD method is used. The film thickness of the silicon nitride film is, for example, 10 nm to 100 nm.
The silicon nitride film has the effect of minimizing over-etching during etching for forming contact holes. It also has the effect of suppressing an increase in junction leakage due to etching damage.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 37 (32) and the cross-sectional view of the peripheral circuit portion in FIG. 38 (33), an interlayer insulating film 76 is formed on the etch-back stopper film 74. The interlayer insulating film 76 is formed of a silicon oxide film, for example, and has a thickness of 100 nm to 1000 nm, for example. The silicon oxide film is formed by, for example, a CVD method. As this silicon oxide film, TEOS, PSG, BPSG or the like is used. A silicon nitride film or the like can also be used.
Next, the surface of the interlayer insulating film 76 is planarized. This planarization is performed by, for example, chemical mechanical polishing (CMP).
Next, after forming a resist mask (not shown) for forming a contact hole, for example, the interlayer insulating film 76, the etching stopper film 74, the second silicide block film 72, etc. of the pixel portion 12 are etched to form a contact. Holes 77, 78 and 79 are formed. Similarly, contact holes 81 and 82 are formed in the peripheral circuit portion 13.
In the drawing, as an example, in the pixel portion 12, contact holes 77, 78, and 79 reaching the transfer gate TRG, the gate electrode 32 of the selection transistor SEL, and the gate electrode 32 of the amplification transistor Amp are shown. In the peripheral circuit portion 13, contact holes 81 and 82 reaching the source / drain region 55 of the N channel (Nch) low breakdown voltage transistor and the source / drain region 55 of the P channel (Pch) low breakdown voltage transistor are shown. However, contact holes reaching the gate electrodes and source / drain regions of other transistors are not shown, but are formed at the same time.
When forming the contact holes 77 to 79, 81, 82, the interlayer insulating film 76 is etched as a first step. Then, the etching is temporarily stopped on the etching stopper film 74. As a result, film thickness variations, etching variations, and the like of the interlayer insulating film 76 are absorbed. As a second step, the etching stopper film 74 made of silicon nitride is etched and further etched to complete the contact holes 77 to 79, 81, and 82.
For example, a reactive ion etching apparatus is used for etching the contact hole.

Next, a plug 85 is formed in each contact hole 77 to 79, 81, 82 via an adhesion layer (not shown) and a barrier metal layer 84.
For example, a titanium (Ti) film or a tantalum (Ta) film is used for the adhesion layer, and for example, a titanium nitride film or a tantalum nitride film is used for the barrier metal layer 84. These films are formed by sputtering or CVD, for example.
The plug 85 uses tungsten (W). For example, a tungsten film is formed on the interlayer insulating film 76 so as to be embedded in the contact holes 77 to 79, 81, and 82. Thereafter, the tungsten film on the interlayer insulating film 76 is removed, and a plug 85 made of a tungsten film is formed in each of the contact holes 77 to 79, 81, 82. The plug 85 can be formed of aluminum (Al), copper (Cu) or the like having a lower resistance in addition to tungsten. For example, when copper (Cu) is used, for example, a tantalum film is used for the adhesion layer and a tantalum nitride film is used for the barrier metal layer 84.
Thereafter, although not shown, a multilayer wiring is formed. The multilayer wiring may be multi-layered as necessary, such as two layers, three layers, four layers,.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 39 (34), a waveguide 23 may be formed on the photoelectric conversion portion 21. Further, a condensing lens 25 may be formed to condense incident light on the photoelectric conversion unit 21.
Further, a color filter 27 for splitting light may be formed between the waveguide 23 and the condenser lens.

  In the solid-state imaging device manufacturing method (first example), the first silicide block film formed of the same layer as the sidewall formation film and the second silicide block film formed of a film different from the first silicide block film are used. The pixel portion 12 is covered with two layers of silicide block films. For this reason, the MOS transistor of the pixel portion 12 is not completely covered with a single silicide block film, so that random noise is reduced and white scratches / dark currents are reduced.

  In the manufacturing method, the solid-state imaging device 1 (1B) described with reference to FIGS. 3, 4, and 5 (2) is formed. When the above-described manufacturing method does not form the element isolation region 14 between the transfer gate TRG, the reset transistor RST, the amplification transistor Amp, and the selection transistor SEL of the pixel unit 12, the solid-state imaging device 1 (1A) described above is formed. Will be. In this case, the floating diffusion portion FD is shared with the source / drain region 34 which is one diffusion layer of the reset transistor RST.

  In the description of the solid-state imaging device and the manufacturing method thereof, the description has been given of the configuration in which one pixel transistor (for example, a reset transistor, an amplification transistor, and a selection transistor) is formed per pixel. The present invention is not limited to the configuration of one pixel and one pixel transistor, but a solid-state imaging device having a configuration in which two pixels are shared by one pixel transistor, and a solid-state imaging having a configuration in which four pixels are shared by one pixel transistor. The present invention can be similarly applied to the apparatus and the manufacturing method thereof.

[Second Example of Manufacturing Method of Solid-State Imaging Device]
For example, the main part of the manufacturing method when one pixel transistor is configured to share four pixels will be described.
First, an example of a configuration in which one pixel transistor shares four pixels will be described with reference to a plan layout diagram of FIG.

  As shown in FIG. 40, the four-pixel photoelectric conversion units 21 (21A, 21B, 21C, and 21D) are arranged in two rows and two columns. A floating diffusion portion FD is formed in the active region continuous to each photoelectric conversion portion 21 at the center of the array of the photoelectric conversion portions 21. Further, transfer gates TGG (TRG-A, TRG-B, TRG-C, TRG-D) are provided on the boundary between each photoelectric conversion unit 21 and the floating diffusion unit FD via a gate insulating film (not shown). Each is formed. The periphery of each photoelectric converter 21 is electrically isolated by an element isolation region 16 made of a diffusion layer, except for the region below the transfer gate TRG. Further, a pixel transistor portion 17 is formed in an area adjacent to each of the photoelectric conversion portions 21 via an element isolation region 14. The pixel transistor unit 17 is configured by, for example, a reset transistor RST, an amplification transistor Amp, and a selection transistor SEL arranged in series.

The main part when the first example of the method for manufacturing a solid-state imaging device is applied to a method for manufacturing a solid-state imaging device in which one pixel transistor portion 17 is shared by four pixels will be described below.
When the pixel transistor is shared by four pixels, the difference from the first example is that the floating diffusion portion FD is formed at the center of the array of the photoelectric conversion portions 21, and each of the photoelectric conversion portions 21 and the floating diffusion portions. The transfer gate TGG is formed above the FD.
However, the manufacturing process is the same as that of the first example except that the photoelectric conversion unit 21, the floating diffusion unit FD, and the transfer gate TGG are different in arrangement. Therefore, the manufacturing method of the peripheral circuit portion is the same as that in the first example. Some of these will be described below.

  First, regarding the sidewall formation step, a plan layout view of the pixel portion of FIG. 41, a cross-sectional view taken along line B1-B1 ′ of FIG. 42 (1), a cross-sectional view taken along line B2-B2 ′ of FIG. ) Along the B3-B3 ′ line, FIG. 43 (4) along the B4-B4 ′ line, and the like. After the sidewall formation film 137 (first silicide block film 71) is formed, the sidewall formation film 137 is etched back, and each gate electrode 32 of the pixel transistor portion 17 and a gate electrode (not shown) of the peripheral circuit portion. Side walls (not shown) are formed on the respective side walls. At that time, the sidewall formation film 137 is left on the photoelectric conversion portion 21. This is because the photoelectric conversion portion 21 is covered with a resist mask (not shown) so that etching damage when forming the sidewall does not enter the photoelectric conversion portion 21. An opening 137H is formed in the sidewall formation film 137 on the region where the floating diffusion portion FD is formed, and the formation region of the floating diffusion portion FD is exposed. A part of the opening 137H is on the transfer gate TGR.

  Thereafter, source / drain regions 34 and 35 of each transistor in the pixel portion and the peripheral circuit portion are formed.

Next, the next step is a plan layout view of the pixel portion of FIG. 44, a sectional view taken along line B1-B1 ′ of FIG. 45 (1), a sectional view taken along line B2-B2 ′ of FIG. 45 (2), and FIG. This will be described with reference to a cross-sectional view taken along line B3-B3 'of FIG. 46, a cross-section taken along line B4-B4' of FIG. After the source / drain regions of the transistors in the pixel portion and the peripheral circuit portion are formed, a silicide layer is formed on the source / drain regions of the peripheral circuit portion. At that time, it is necessary not to form a silicide layer in the pixel transistor, the photoelectric conversion unit 21 and the like. Therefore, before the silicide layer is formed, a second silicide block film 72 that covers the pixel transistor portion 17 is formed. At this time, the second silicide block film 72 is formed so as to overlap the first silicide block film 71 on the element isolation region 14.
At this time, the second silicide block film 72 is coated on the floating diffusion portion FD so as to overlap with the periphery of the opening 137H of the first silicide block film 71.
Thereafter, similar to the first example, the steps after the silicidation step on the source / drain regions of the MOS transistor in the peripheral circuit portion and on the gate electrode are performed.

  In the first and second examples of the manufacturing method, when the sidewalls 33 and 53 are formed on the sidewalls of the gate electrodes 32 and 52 of the pixel portion 12 and the peripheral circuit portion 13, the sidewalls are formed on the floating diffusion portion FD. The film 137 is not covered with a resist mask. In this state, when the sidewalls 33 and 53 are formed on the sidewalls of the gate electrodes 32 and 52 by etching, there is a concern that etching damage may occur in the floating diffusion portion FD.

The concern about the etching damage will be described below.
For example, as shown in FIG. 47, when sidewalls (not shown) are formed on the sidewalls of the gate electrodes (not shown) by etching, etching damage may occur in the floating diffusion portion FD.
When etching damage occurs in the floating diffusion portion FD, a leak path is generated in the P / N junction of the floating diffusion portion FD, and the FD white scratch is worsened.

  Here, FD white scratches will be described. The electrons photoelectrically converted by the photoelectric conversion unit are transferred to the floating diffusion unit FD and converted into a voltage. At this time, if there is a leak path in the floating diffusion part FD, even if there is no photoelectrically converted electron in the floating diffusion part FD, the leaked electrons are output and appear white. This is called FD white scratch.

In some cases, the element isolation region 16 composed of a P-type diffusion layer is used for the separation of the photoelectric conversion portion (not shown) and the floating diffusion portion FD. As described above, when the P-type diffusion layer is used for separation between pixels, FD white scratches are particularly greatly deteriorated. This may be due to the influence of outdiffusion of impurities during heat treatment at 1000 ° C. or higher for the activation of the source / drain regions, for example. For example, impurities scattered by outward diffusion during the heat treatment adhere between the floating diffusion portion FD and the element isolation region 16 composed of a P-type diffusion layer, forming a large leak path and causing a defect of FD white scratches. Wake up.
That is, when a leak current flows to the floating diffusion portion FD, a signal appears to be present even in the dark (dark state), and white scratches occur.
In addition, when there is a leak between the reset of the potential of the floating diffusion portion FD and the detection of the signal potential, the signal appears to be present, and the voltage fluctuation due to the leak current is superimposed on the reset potential. Because.

  In the above example, a case in which one pixel transistor shares four pixels is shown. However, when two pixels are shared, there is a possibility that etching damage may occur in the floating diffusion portion FD in the case of only one pixel. is there.

<3. Third Embodiment>
[Example of configuration of solid-state imaging device]
Therefore, a configuration for preventing etching damage from occurring in the floating diffusion portion FD will be described with reference to FIG. 1 and FIG. 2 or the solid-state imaging device 1 described with reference to FIG. 3 and FIG.
For example, the first silicide block film 71 is formed so as to cover the photoelectric conversion unit 21, the transfer gate TGR, the floating diffusion unit FD, and a part of the gate electrode 32 of the reset transistor RST. In this case, the second silicide block film 72 is formed so as to overlap the first silicide block film 71 on the gate electrode 32 of the reset transistor RST.

  By forming the first and second silicide block films 71 and 72 as described above, when forming the sidewall 33 and the sidewall (not shown) of the peripheral circuit portion, the sidewall formation film is also formed on the floating diffusion portion FD. The first silicide block film 71 is covered. Therefore, it is possible to prevent etching damage at the time of forming the sidewall in the floating diffusion portion FD.

[Third example of configuration of solid-state imaging device]
Next, a third example of a solid-state imaging device having a configuration in which four pixels are shared by one pixel transistor described with reference to FIG. 40 will be described. 48 is a plan layout view of the pixel portion in FIG. 48, a cross-sectional view taken along line B1-B1 ′ in FIG. 49 (1), a cross-sectional view taken along line C2-C2 ′ in FIG. Description will be made with reference to a cross-sectional view taken along a line, a cross section taken along line C4-C4 'of FIG.

  The first silicide block film 71 is formed so as to cover the photoelectric conversion portion 21, the transfer gate TGR, and the floating diffusion portion FD. In this case, the second silicide block film 72 is formed so as to cover the pixel transistor portion 17 in which the first silicide block film 71 is not formed, so as to overlap the first silicide block film 71 on, for example, the element isolation region 14. ing.

  Therefore, when the sidewall 33 of the pixel transistor portion 17 and the sidewall (not shown) of the peripheral circuit portion are formed, the floating diffusion portion FD is also covered with the first silicide block film 71 which is a sidewall formation film. For this reason, it is possible to prevent etching damage at the time of forming the sidewall in the floating diffusion portion FD. Further, the floating diffusion portion FD can be prevented from being affected by outward diffusion. As a result, the occurrence of a leak path can be suppressed and the occurrence of FD white scratches can be suppressed, so that high-quality imaging is possible.

[Fourth Example of Configuration of Solid-State Imaging Device]
Next, a fourth example of the solid-state imaging device having a configuration in which four pixels are shared by one pixel transistor described in FIG. 40 will be described. 51 is a plan layout view of the pixel portion in FIG. 51, a cross-sectional view taken along line D1-D1 ′ in FIG. 52 (1), a cross-sectional view taken along line D2-D2 ′ in FIG. 52 (2), and D3-D3 ′ in FIG. Description will be made with reference to a cross-sectional view taken along a line D4-D4 ′ of FIG. 53 (4), and the like.

  The first silicide block film 71 is formed so as to cover the photoelectric conversion unit 21, the transfer gate TGR, the floating diffusion unit FD, and the source / drain region 34 of the reset transistor RST. In this case, the second silicide block film 72 is a region where the first silicide block film 71 is not formed so as to overlap the first silicide block film 71, for example, on the element isolation region 14 and the gate electrode 32 of the reset transistor RST. It is formed by coating.

  Therefore, the floating diffusion portion FD and the source / drain region 34 of the reset transistor RST connected to the floating diffusion portion FD are also covered with the first silicide block film 71 which is a sidewall formation film. Therefore, when sidewalls are formed in the pixel transistor portion and the peripheral circuit portion (not shown), it is possible to prevent etching damage from occurring in the floating diffusion portion FD and the source / drain region 34 of the reset transistor RST. Further, the floating diffusion portion FD and the source / drain region 34 of the reset transistor RST can be prevented from being affected by outward diffusion. As a result, the occurrence of a leak path can be suppressed and the occurrence of FD white scratches can be suppressed, so that high-quality imaging is possible.

  In both the third and fourth examples of the solid-state imaging device, the configuration of the peripheral circuit unit is the same as that described with reference to FIGS.

<4. Fourth Embodiment>
[Third Example of Manufacturing Method of Solid-State Imaging Device]
Next, with respect to a manufacturing method (third example) for avoiding etching damage of the floating diffusion portion FD, an essential part thereof will be described by taking a manufacturing method in a case where one pixel transistor shares four pixels as an example.

When the pixel transistor is shared by four pixels, the difference from the first example is that a floating diffusion portion is formed at the center of the array of photoelectric conversion portions, and between each photoelectric conversion portion and the floating diffusion portion. The transfer gate is formed on the top.
However, the manufacturing process is the same as that of the first example except that the arrangement of the photoelectric conversion part, the floating diffusion part, the transfer gate, and the pattern shape of the sidewall formation film and the second silicide block film are different. It is. Some of these will be described below.

First, regarding the sidewall formation step, a plan layout view of the pixel portion in FIG. 54, a cross-sectional view taken along line C1-C1 ′ in FIG. 55 (1), a cross-sectional view taken along line C2-C2 ′ in FIG. ), A cross-sectional view taken along line C3-C3 ′, a cross-sectional view taken along line C4-C4 ′ of FIG. 56 (4), and the like. After the sidewall formation film 137 (first silicide block film 71) is formed, the sidewall formation film 137 is etched back, and each gate electrode 32 of the pixel transistor portion 17 and a gate electrode (not shown) of the peripheral circuit portion. Side walls (not shown) are formed on the respective side walls. At this time, the sidewall formation film 137 remains on the photoelectric conversion unit 21 and the floating diffusion unit FD (including the transfer gate TRG). This is because the photoelectric conversion unit 21 and the floating diffusion unit FD are covered with a resist mask (not shown) so that etching damage when forming the sidewall does not enter the photoelectric conversion unit 21 and the floating diffusion unit FD. It is to keep.
That is, the first example of the manufacturing method described above is different from the first example only in that the resist mask 138 (see FIG. 25) is formed to extend to the floating diffusion portion FD. The same process is performed.
Note that the floating diffusion portion FD, the source / drain region 34, and the like are not yet formed at this stage. In order to facilitate understanding of the positional relationship in the drawing, the floating diffusion portion FD and the source / drain region 34 are described.

  Thereafter, source / drain regions 34 and 35 of each transistor in the pixel portion and the peripheral circuit portion are formed. At that time, since the floating diffusion FD is covered with the sidewall formation film 137, it is desirable to perform ion implantation separately from ion implantation for forming the source / drain regions of each transistor in the pixel portion and the peripheral circuit portion. .

Next, the next step is a plan layout view of the pixel portion of FIG. 57, a sectional view taken along line C1-C1 ′ of FIG. 58 (1), a sectional view taken along line C2-C2 ′ of FIG. 58 (2), and FIG. This will be described with reference to a cross-sectional view taken along line C3-C3 ′ of FIG.
After the source / drain regions of the transistors in the pixel portion 12 and the peripheral circuit portion (not shown) are formed, a silicide layer is formed on the source / drain regions of the peripheral circuit portion. At this time, it is necessary not to form a silicide layer in the pixel transistor unit 17, the photoelectric conversion unit 21, and the like. Therefore, before the silicide layer is formed, a second silicide block film 72 that covers the pixel transistor portion 17 is formed. At this time, the second silicide block film 72 is formed so as to overlap the first silicide block film 71. In other parts, the first silicide block film 71 may be overlapped on the element isolation region 14.
Thereafter, similar to the first example, the steps after the silicidation step on the source / drain regions of the MOS transistor in the peripheral circuit portion and on the gate electrode are performed.

  Therefore, when the sidewall 33 of the pixel transistor portion 17 and the sidewall (not shown) of the peripheral circuit portion are formed, the floating diffusion portion FD is also covered with the first silicide block film 71 which is a sidewall formation film. For this reason, it is possible to prevent etching damage at the time of forming the sidewall in the floating diffusion portion FD. Further, the floating diffusion portion FD can be prevented from being affected by outward diffusion. As a result, the occurrence of a leak path can be suppressed and the occurrence of FD white scratches can be suppressed, so that a solid-state imaging device capable of imaging with high image quality can be manufactured. Further, the pixel transistor portion 17 can be covered with the second silicide block film 72 before the silicide layer is formed.

[Fourth Example of Manufacturing Method of Solid-State Imaging Device]
Next, with respect to a manufacturing method (fourth example) for avoiding etching damage of the floating diffusion portion FD, the main part will be described by taking as an example a manufacturing method in a case where one pixel transistor shares four pixels.

When the pixel transistor is shared by four pixels, the difference from the first example is that a floating diffusion portion is formed at the center of the array of photoelectric conversion portions, and between each photoelectric conversion portion and the floating diffusion portion. The transfer gate is formed on the top.
However, the manufacturing process is the same as that of the first example except that the arrangement of the photoelectric conversion part, the floating diffusion part, the transfer gate, and the pattern shape of the sidewall formation film and the second silicide block film are different. It is. Some of these will be described below.

First, regarding the sidewall formation step, a plan layout view of the pixel portion of FIG. 60, a cross-sectional view taken along line D1-D1 ′ of FIG. 61 (1), a cross-sectional view taken along line D2-D2 ′ of FIG. ), A cross-sectional view taken along line D3-D3 ′, a cross-sectional view taken along line D4-D4 ′ of FIG.
After the sidewall formation film 137 (first silicide block film 71) is formed, the sidewall formation film 137 is etched back, and each gate electrode 32 of the pixel transistor portion 17 and a gate electrode (not shown) of the peripheral circuit portion. Side walls (not shown) are formed on the respective side walls. At this time, the sidewall formation film 137 is left on the photoelectric conversion unit 21, the floating diffusion unit FD (including the transfer gate TRG) and the source / drain region 34 of the reset transistor RST. This is because the photoelectric conversion portion is prevented from causing etching damage when forming the sidewalls to enter the photoelectric conversion portion 21, the floating diffusion portion FD (including the transfer gate TRG) and the source / drain region 34 of the reset transistor RST. This is because a resist mask (not shown) covers the upper surface 21, the floating diffusion portion FD, and the source / drain region 34 of the reset transistor RST.
That is, in the first example of the manufacturing method described above, the resist mask 138 (see FIG. 25) is placed on the floating diffusion portion FD, the source / drain region 34 of the reset transistor RST, and a part of the gate electrode 32 of the reset transistor RST. The other steps up to this point are the same as those in the first example, except that they are formed so as to be extended.
Note that the floating diffusion portion FD, the source / drain region 34, and the like are not yet formed at this stage. In order to facilitate understanding of the positional relationship in the drawing, the floating diffusion portion FD and the source / drain region 34 are described.

  Thereafter, source / drain regions 34 and 35 of each transistor in the pixel portion and the peripheral circuit portion are formed. At that time, since the floating diffusion FD and the source / drain region 34 of the reset transistor RST are covered with the sidewall formation film 137, ion implantation for forming the source / drain region of each transistor in the pixel portion and the peripheral circuit portion is performed. It is desirable to perform ion implantation separately.

Next, the next step is a plan layout view of the pixel portion of FIG. 63, a sectional view taken along line D1-D1 ′ of FIG. 64 (1), a sectional view taken along line D2-D2 ′ of FIG. 64 (2), and FIG. This will be described with reference to a cross-sectional view taken along line D3-D3 'of FIG. 65, a cross-section taken along line D4-D4' of FIG.
After the source / drain regions of the transistors in the pixel portion and the peripheral circuit portion are formed, a silicide layer is formed on the source / drain regions of the peripheral circuit portion. At this time, it is necessary not to form a silicide layer in the pixel transistor unit 17, the photoelectric conversion unit 21, and the like. Therefore, before the silicide layer is formed, a second silicide block film 72 that covers the pixel transistor portion 17 is formed. At this time, the second silicide block film 72 is formed so as to overlap the first silicide block film 71. At this time, since the first silicide block film 71 is formed up to a part of the gate electrode 32 of the reset transistor RST, the second silicide block film 72 is formed on the gate electrode 32 of the reset transistor RST. And just overlap. In other parts, the first silicide block film 71 may be overlapped on the element isolation region 14.
Thereafter, similar to the first example, the steps after the silicidation step on the source / drain regions of the MOS transistor in the peripheral circuit portion and on the gate electrode are performed.

  Therefore, when the sidewall 33 of the pixel transistor portion 17 and the sidewall (not shown) of the peripheral circuit portion are formed, the floating diffusion portion FD is also covered with the first silicide block film 71 which is a sidewall formation film. For this reason, it is possible to prevent etching damage at the time of forming the sidewall in the floating diffusion portion FD. Further, the floating diffusion portion FD can be prevented from being affected by outward diffusion. As a result, the occurrence of a leak path can be suppressed and the occurrence of FD white scratches can be suppressed, so that a solid-state imaging device capable of imaging with high image quality can be manufactured. Further, the pixel transistor portion 17 can be covered with the second silicide block film 72 before the silicide layer is formed.

[Modifications of Third and Fourth Examples of Solid-State Imaging Device and Manufacturing Method Thereof]
In the configuration in which the four pixels in the third and fourth examples are shared by one pixel transistor unit 17, the element isolation around the photoelectric conversion unit 21 is diffusion layer (P + -type diffusion layer) isolation, and the pixel transistor unit 17 For isolation of the surrounding elements, isolation of an STI (Shallow Trench Isolation) structure was used. For example, as shown in FIG. 66, element isolation around the photoelectric conversion unit 21 and element isolation around the pixel transistor unit 17 may be formed by an element isolation region 16 formed of a diffusion layer (P + -type diffusion layer).
In this case, the first silicide block film 71 can be formed in the same manner as described in the third example, the fourth example, and the like. The second silicide block film 72 can be formed in the same manner as described in the third example, the fourth example, and the like.

[Modification of First Example of Solid-State Imaging Device and Manufacturing Method Thereof]
In the configuration shown in FIG. 5A, the element isolation around the photoelectric conversion unit 21 and the pixel transistor unit is element isolation having an STI (Shallow Trench Isolation) structure. For example, as shown in FIGS. 67 to 69, element isolation around the photoelectric conversion unit 21 and element isolation around the pixel transistor unit 17 may be formed by an element isolation region 16 including a diffusion layer (P + -type diffusion layer). it can.
In this case, the first silicide block film 71 covers the photoelectric conversion unit 21, the transfer gate TRG, the floating diffusion unit FD, and the source / drain region 34 of the reset transistor RST, and further the gate electrode of the reset transistor RST. It is formed so as to cover a part of 32. The second silicide block film 72 is formed so as to overlap the first silicide block film 71. At this time, since the first silicide block film 71 is formed up to a part of the gate electrode 32 of the reset transistor RST, the second silicide block film 72 is formed on the gate electrode 32 of the reset transistor RST. And just overlap. In other parts, the first silicide block film 71 may be overlapped on the element isolation region 16.
68 is a cross-sectional view taken along line AA ′ in FIG. 67, and FIG. 69 is a cross-sectional view taken along line EE ′ in FIG.

  In both the third and fourth examples of the method for manufacturing the solid-state imaging device, the configuration of the peripheral circuit unit is the same as that of the first example of the manufacturing method.

[Detailed example of manufacturing method of solid-state imaging device]
Next, a detailed example of a manufacturing method in a case where one pixel transistor shares four pixels will be described with reference to manufacturing process cross-sectional views of FIGS. This manufacturing method is a manufacturing method for forming the configuration described with reference to the plan layout diagram of the pixel portion of FIG.
Also, (1) in each drawing is a cross-sectional view corresponding to the D1-D1 ′ line position, (2) is a cross-sectional view corresponding to the D2-D2 ′ line position, and (3) is equivalent to a D3-D3 ′ line position. Sectional drawing to perform and sectional drawing equivalent to the D4-D4 'line position of (4) are shown.

First, the steps described with reference to FIGS.
For example, a silicon substrate is used as the semiconductor substrate 11. Then, an element isolation region 14 is formed around the pixel transistor, and a second element isolation region 15 of the peripheral circuit unit 13 is formed.
Next, although not shown in FIGS. 6 to 12, ap well and n well are formed in the semiconductor substrate 11. Further, channel ion implantation is performed. Further, ion implantation for forming a photodiode in the photoelectric conversion portion is performed to form a p-type region. For example, boron (B) ions are implanted into the surface of the semiconductor substrate on which the photoelectric conversion portion is formed, arsenic (As) or phosphorus (P) is implanted into a deep region, and the p-type region is formed. An n-type region is formed to be bonded to the lower part of the substrate. In this way, a pn junction photoelectric conversion part is formed.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 70 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 70 (2), and the D3-D3 ′ line in FIG. Description will be made with reference to a cross-sectional view corresponding to the position, a cross-section corresponding to the position of the line D4-D4 'in FIG.
A sacrificial oxide film 151 is formed on the semiconductor substrate 11. Next, a resist mask 152 is formed on the sacrificial oxide film 151. The resist mask 152 has an opening 153 on an element isolation region formed around the photoelectric conversion unit 21. That is, the resist mask 152 covers the photoelectric conversion portion 21 and the formation regions of the transfer gate, the floating diffusion portion, and the pixel transistor.
Next, using the resist mask 152 as an ion implantation mask, ions are implanted into the semiconductor substrate 11 to form a P + -type element isolation region 16. In this ion implantation, for example, boron (B) is used as an ion species, and the dose is set to 1 × 10 12 / cm 2 to 1 × 10 13 / cm 2 . Further, the implantation energy is set to 10 keV to 30 keV. Further, ion implantation may be performed in multiple stages depending on the depth.
Thus, each photoelectric conversion unit 21 is separated by the element isolation region 16, and is separated from the pixel transistor formation region in which the reset transistor, the amplification transistor, the selection transistor, and the like are formed by the element isolation region 14. Although not shown, the peripheral circuit section is isolated by the element isolation region (15) as described above.

  Thereafter, the resist mask 152 is removed, and the sacrificial oxide film 151 is further removed. The drawing shows a state immediately before the resist mask 152 is removed.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 72 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 72 (2), and the D3-D3 ′ line in FIG. 73 (3). Description will be made with reference to a cross-sectional view corresponding to a position, a cross-section corresponding to a position along line D4-D4 ′ in FIG.
As shown in FIGS. 72 and 73, a gate insulating film 31 is formed on the semiconductor substrate 11, and a gate electrode forming film 131 is further formed on the gate insulating film 31. At this time, although not shown, as shown in FIG. 14, the gate insulating film 51 is formed also on the semiconductor substrate 11 of the peripheral circuit portion 13, and the gate electrode forming film 131 is formed on the gate insulating film 51. Form.
The gate electrode formation film 131 is formed by depositing polysilicon by, for example, LP-CVD. The deposited film thickness is 150 nm to 200 nm at the 90 nm node, although it depends on the technology node.
In addition, the film thickness tends to become thinner at each node because the gate aspect ratio is generally not increased from the controllability of processing.
As a gate depletion countermeasure, silicon germanium (SiGe) may be used instead of polysilicon. This gate depletion means that as the thickness of the gate oxide film becomes thinner, not only the physical gate oxide film thickness but also the influence of the thickness of the depletion layer in the gate polysilicon cannot be ignored. This is a problem that the effective gate oxide film thickness is not reduced and the transistor performance is degraded.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 74 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 74 (2), and the D3-D3 ′ line in FIG. Description will be made with reference to a cross-sectional view corresponding to the position, a cross-section corresponding to the position of the line D4-D4 'in FIG.
As shown in FIGS. 74 and 75, gate depletion countermeasures are taken. First, a resist mask 132 is formed on the pMOS transistor formation region of the peripheral circuit portion 13 (see FIG. 16), and the gate electrode formation film 131 in the nMOS transistor formation region is doped with n-type impurities. This doping is performed by ion implantation of, for example, phosphorus (P) or arsenic (As). The ion implantation amount is about 1 × 10 15 / cm 2 to 1 × 10 16 / cm 2 . Thereafter, the resist mask 132 is removed.
Next, although not shown, a resist mask (not shown) is formed on the nMOS transistor formation region, and the gate electrode formation film 131 in the pMOS transistor formation region of the peripheral circuit portion 13 (see FIG. 16) is formed. Is doped with a p-type impurity. This doping is performed by ion implantation of, for example, boron (B), boron difluoride (BF 2 ), or indium (In). The ion implantation amount is about 1 × 10 15 / cm 2 to 1 × 10 16 / cm 2 . Thereafter, the resist mask is removed.
Either of the ion implantations may be performed first.
Further, in each of the above ion implantations, nitrogen (N 2 ) ion implantation may be combined in order to prevent the implanted ions from penetrating directly under the gate insulating film.

Next, a sectional view corresponding to the D1-D1 ′ line position in FIG. 76 (1), a sectional view corresponding to the D2-D2 ′ line position in FIG. 76 (2), and a D3-D3 ′ line in FIG. 77 (3). Description will be made with reference to a cross-sectional view corresponding to a position, a cross-section corresponding to a position along line D4-D4 'in FIG. 77 (4), and the like.
As shown in FIGS. 76 and 77, a resist mask (not shown) for forming each gate electrode is formed on the gate electrode formation film 131. By reactive ion etching using this resist mask as an etching mask, the gate electrode forming film 131 is etched to form the gate electrode 32 of each MOS transistor of the pixel portion 12, the transfer gate TRG, and each MOS of the peripheral circuit portion 13. A gate electrode 52 of the transistor is formed (see FIG. 18).
Next, the surfaces of the gate electrode 32 and the gate electrode 52 (see FIG. 18) are oxidized to form an oxide film 133.
The film thickness of the oxide film 133 is, for example, 1 nm to 10 nm. The oxide film 133 is also formed on the upper surface together with the side walls of the gate electrodes 32 and 52.
Furthermore, the oxide film withstand voltage can be improved by rounding the edge portions of the gate electrodes 32 and 52 by the oxidation step.
Further, etch damage can be reduced by performing the heat treatment.
In the gate electrode processing, even if the gate insulating film formed on the photoelectric conversion unit 21 is removed, the oxide film 133 is formed on the photoelectric conversion unit 21. For this reason, when a resist film is formed in the lithography process of the next process, since it is not directly attached to the silicon surface, contamination by this resist can be prevented. Therefore, for the photoelectric conversion unit 21 of the pixel unit 12, it becomes a measure for preventing white scratches.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 78 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 78 (2), and the D3-D3 ′ line in FIG. 79 (3). Description will be made with reference to a cross-sectional view corresponding to the position, a cross section corresponding to the position of the line D4-D4 'in FIG.
As shown in FIGS. 78 and 79, the LDD regions 38 and 39 of each MOS transistor of the pixel unit 12 are formed, and the LDD regions 61, 62, 63, and 64 of each MOS transistor of the peripheral circuit unit 13 are formed. (See FIG. 20).

First, for the NMOS transistor formed in the peripheral circuit section 13, pocket diffusion layers 65 and 66 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52 (52N) (see FIG. 20). The pocket diffusion layers 65 and 66 are formed by ion implantation. For example, boron difluoride (BF 2 ), boron (B), or indium (In) is used as the ion implantation species, and the dose amount is, for example, 1 × 10 12 / set to cm 2 ~1 × 10 14 / cm 2.
Further, LDD regions 61 and 62 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52 (52N). The LDD regions 61 and 62 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is, for example, 1 × 10 13 / cm 2 to 1 × 10 15 / cm 2 . Set.

With respect to the MOS transistor formed in the pixel portion 12, LDD regions 38 and 39 are formed in the semiconductor substrate 11 on both sides of each gate electrode 32. The LDD regions 38 and 39 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is, for example, 1 × 10 13 / cm 2 to 1 × 10 15 / cm 2 . Set. Further, a pocket diffusion layer may be formed.
With respect to the MOS transistor formed in the pixel portion 12, the LDD region may not be formed from the viewpoint of process reduction. Alternatively, it may also serve as LDD ion implantation of a MOS transistor formed in the peripheral circuit section 13.

Regarding the formation region of the PMOS transistor in the peripheral circuit portion 13, pocket diffusion layers 67 and 68 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52 (see FIG. 20). The pocket diffusion layers 67 and 68 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as the ion implantation species, and the dose amount is, for example, 1 × 10 12 / cm 2 to 1 × 10 14 / cm. Set to 2 .
Further, LDD regions 63 and 64 are formed in the semiconductor substrate 11 on both sides of each gate electrode 52 (52P). The LDD regions 63 and 64 are formed by ion implantation. For example, boron difluoride (BF 2 ), boron (B), or indium (In) is used as the ion implantation species, and the dose amount is, for example, 1 × 10 13 / cm 2. Set to ˜1 × 10 15 / cm 2 .

  Further, pre-amorphization may be performed by implanting germanium (Ge) as a channeling suppression technique for implantation before pocket ion implantation of the NMOS transistor and PMOS transistor in the peripheral circuit portion. Further, after the formation of the LDD region, an RTA (Rapid Thermal Annealing) process of about 800 ° C. to 900 ° C. may be added in order to reduce implantation defects that cause TED (Transient Enhanced Diffusion) or the like.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 80 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 80 (2), and the D3-D3 ′ line in FIG. Description will be made with reference to a cross-sectional view corresponding to a position, a cross-section corresponding to a position along line D4-D4 ′ in FIG.
As shown in FIGS. 80 and 81, a silicon oxide (SiO 2 ) film 134 is formed on the entire surface of the pixel portion 12 and the peripheral circuit portion 13 (see FIG. 22). The silicon oxide film 134 is formed of a deposited film such as non-doped silicate glass (NSG), LP-TEOS (Tetra Ethyl Ortho Silicate), or high temperature oxidation (HTO) film. The silicon oxide film 134 is formed with a film thickness of, for example, 5 nm to 20 nm.
Next, a silicon nitride film 135 is formed on the silicon oxide film 134. As the silicon nitride film 135, for example, a silicon nitride film formed by LPCVD is used. The film thickness is, for example, 10 nm to 100 nm.
The silicon nitride film 135 may be an ALD silicon nitride film formed by an atomic layer deposition method that can be formed at a low temperature.
Since the silicon oxide film 134 immediately below the silicon nitride film 135 has a smaller thickness on the photoelectric conversion unit 21 of the pixel unit 12, light reflection is prevented, so that the sensitivity of the photoelectric conversion unit 21 is improved.
Next, a third silicon oxide (SiO 2 ) film 136 is deposited on the silicon nitride film 135 as necessary. The silicon oxide film 136 is formed of a deposited film such as NSG, LP-TEOS, or HTO. The silicon oxide film 136 is formed to a thickness of 10 nm to 100 nm, for example.

  Therefore, the sidewall formation film 137 is a three-layer structure film of silicon oxide film 136 / silicon nitride film 135 / silicon oxide film 134. The sidewall formation film 137 may be a two-layer structure film of silicon nitride film / silicon oxide film. Hereinafter, the sidewall formation film 137 having a three-layer structure film will be described.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 82 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 82 (2), and the D3-D3 ′ line in FIG. 83 (3). Description will be made with reference to a cross-sectional view corresponding to the position, a cross-section corresponding to the position of the line D4-D4 'in FIG.
As shown in FIGS. 82 and 83, the silicon oxide film 136 formed in the uppermost layer is etched back so that the gate electrodes 32 and 52 (see FIG. 24), the side of the transfer gate TRG, etc. Leave only. The etch back is performed by, for example, reactive ion etching (RIE). In this etch back, the etching is stopped at the silicon nitride film 135. Since etching is stopped at the silicon nitride film 135 in this way, etch damage to the photoelectric conversion unit 21 of the pixel unit 12 can be reduced, and thus white scratches can be reduced.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 84 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 84 (2), and the D3-D3 ′ line in FIG. Description will be made with reference to a cross-sectional view corresponding to the position, a cross-section corresponding to the position of the line D4-D4 'in FIG.
As shown in FIGS. 84 and 85, the entire surface of the pixel portion 12 on the photoelectric conversion portion 21, the transfer gate TRG, the region where the floating diffusion portion is formed, the LDD region 38 of the reset transistor, and the gate electrode of the reset transistor A resist mask 138 is formed so as to cover a part of the upper surface 32.
Thereafter, the silicon nitride film 135 and the silicon oxide film 134 are etched back, and the silicon oxide film 134, the silicon nitride film 135, and the silicon oxide film 136 are formed on the side walls of the gate electrodes 32 and 52 (see FIG. 26). A first sidewall 33 and a second sidewall 53 (see FIG. 26) are formed. At this time, the silicon nitride film 135 and the silicon oxide film 134 on the photoelectric conversion unit 21, the region for forming the floating diffusion unit, and the region for forming the source / drain region of the reset transistor are covered with the resist mask 138. So it is not etched. Therefore, etching damage does not occur in the region where the photoelectric conversion portion 21, the floating diffusion portion is formed, and the region where the source / drain regions of the reset transistor are formed.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 86 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 86 (2), and the D3-D3 ′ line in FIG. 87 (3). Description will be made with reference to a cross-sectional view corresponding to the position, a cross-section corresponding to the position of the line D4-D4 'in FIG.
First, as shown in FIG. 28, a resist mask (not shown) having an opening over the formation region of the NMOS transistor in the peripheral circuit portion 13 is formed, and using this, an NMOS transistor in the peripheral circuit portion 13 is formed by ion implantation. Deep source-drain regions 54 (54N) and 55 (55N) are formed in the formation region. That is, the source / drain regions 54N and 55N are formed on the semiconductor substrate 11 on both sides of each gate electrode 52 through the LDD regions 58 and 59, etc. The source / drain regions 54N and 55N are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is 1 × 10 15 / cm 2 to 1 × 10 16 / Set to cm 2 . Thereafter, the resist mask is removed.

Next, as shown in FIGS. 86 and 87, a resist mask (not shown) having an opening over the formation region of the NMOS transistor in the pixel portion 12 is formed, and using this, an NMOS is formed in the pixel portion 12 by ion implantation. Deep source-drain regions 34 and 35 and a floating diffusion portion FD are formed in a transistor formation region. That is, the source / drain regions 34 and 35 are formed in the semiconductor substrate 11 on both sides of each gate electrode 32 via the LDD regions 38 and 39 and the like. The source / drain regions 34 and 35 are formed by ion implantation. For example, arsenic (As) or phosphorus (P) is used as an ion implantation species, and the dose amount is 1 × 10 15 / cm 2 to 1 × 10 16 / Set to cm 2 . Thereafter, the resist mask is removed.
This ion implantation can also serve as ion implantation for forming the source / drain regions 54N and 55N of the NMOS transistor in the peripheral circuit portion.
Further, since the source / drain regions 34 of the reset transistor are ion-implanted through the silicon oxide film 134 and the silicon nitride film 135, ion implantation of this portion can be performed separately.

Next, as shown in FIG. 28, a resist mask (not shown) having an opening on the formation region of the PMOS transistor in the peripheral circuit portion 13 is formed, and by using this, a PMOS of the peripheral circuit portion 13 is formed by ion implantation. Deep source-drain regions 54 (54P) and 55 (55P) are formed in the transistor formation region. That is, the source / drain regions 54P and 55P are formed on the semiconductor substrate 11 on both sides of each gate electrode 52 via the LDD regions 60 and 61, etc. The source / drain regions 54P and 55P are formed by ion implantation. For example, boron (B) or boron difluoride (BF 2 ) is used as an ion implantation species, and the dose is 1 × 10 15 / cm 2 to 1 for example. Set to × 10 16 / cm 2 . Thereafter, the resist mask is removed.

  Next, activation annealing of each source / drain region is performed. This activation annealing is performed at about 800 ° C. to 1100 ° C., for example. As an apparatus for performing this activation annealing, for example, an RTA (Rapid Thermal Annealing) apparatus, a spike-RTA apparatus, or the like can be used.

Prior to the activation annealing of the source / drain regions, a sidewall formation film 137 covering the photoelectric conversion portion 21 is formed on the gate electrode 32 of the MOS transistor of the pixel portion 12 by the sidewall formation film 137. It is separated from the side wall 33. For this reason, there is no deterioration due to stress caused by SMT (Stress Memorization Technique) described in the prior art.
Therefore, white scratches, random noise, etc. can be improved.
Further, the photoelectric conversion portion 21 is covered with a sidewall formation film 137, and a resist mask at the time of ion implantation for forming the source / drain regions is formed on the photoelectric conversion portion 21 via the sidewall formation film 137. Therefore, it is not directly attached to the surface of the photoelectric conversion unit 21. For this reason, since the photoelectric conversion unit 21 is not contaminated by the contaminant in the resist, it is possible to suppress an increase in white scratches, dark current, and the like.
Further, since ion implantation for forming the source / drain regions is not ion implantation through a film, the depth can be set with the surface concentration being increased. For this reason, an increase in the series resistance of the source / drain regions can be suppressed.
Further, the sidewalls are formed so as to cover the photoelectric conversion portion 21, the floating diffusion portion FD, and the source / drain region 34 of the reset transistor connected to the floating diffusion portion FD by wiring (not shown). The film 137 is used as the first silicide block film 71 in the subsequent process.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 88 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 88 (2), and the D3-D3 ′ line in FIG. 89 (3). Description will be made with reference to a cross-sectional view corresponding to a position, a cross-section corresponding to a position along line D4-D4 'in FIG. 89 (4), and the like.
First, as shown in FIGS. 88 and 89, a second silicide block film 72 is formed on the entire surface of the pixel portion 12 and the peripheral circuit portion 13 (see FIG. 30). The second silicide block film 72 is a laminated film of a silicon oxide (SiO 2 ) film 138 and a silicon nitride (Si 3 N 4 ) film 139. For example, the silicon oxide film 138 is formed with a film thickness of, for example, 5 nm to 40 nm, and the silicon nitride film 139 is formed with a film thickness of, for example, 5 nm to 60 nm.
As the silicon oxide film 138, an NSG, LP-TEOS, HTO film, or the like is used. As the silicon nitride film 139, ALD-SiN, plasma nitride film, LP-SiN, or the like is used. If the film formation temperature of the two-layer film is high, boron is deactivated in the gate electrode of the PMOSFET, and the current driving capability of the PMOSFET is reduced due to gate depletion. Therefore, it is desirable that the deposition temperature is relatively lower than that of the sidewall formation film 137. The film forming temperature is desirably 700 ° C. or lower, for example.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 90 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 90 (2), and the D3-D3 ′ line in FIG. 91 (3). Description will be made with reference to a cross-sectional view corresponding to a position, a cross-section corresponding to a position along line D4-D4 'in FIG. 91 (4), and the like.
First, as shown in FIGS. 90 and 91, a resist mask 141 is formed so as to substantially cover the MOS transistor formation region of the pixel portion 12. Using this resist mask 141 as an etching mask, the photoelectric conversion unit 21 of the pixel unit 12, the floating diffusion unit FD (including the transfer gate TRG), the source / drain region 34 of the reset transistor, and the gate of the reset transistor A part of the electrode 32 and the second silicide block film 72 on the peripheral circuit portion 13 (see FIG. 32) are removed by etching. Therefore, the second silicide block film 72 is formed so as to overlap the first silicide block film 71 on the gate electrode 32 of the reset transistor and on the back side of the illustrated element isolation region 14.
As a result, the silicon nitride film 135 and the silicon oxide film 134 are formed on the photoelectric conversion unit 21 from the upper layer, and spectral ripples can be prevented. On the other hand, when the above etching is not performed, the photoelectric conversion unit 21 has a structure of a silicon nitride film 139, a silicon oxide film 138, a silicon nitride film 135, and a silicon oxide film 134 from the upper layer, and incident light is multiple-reflected. Spectral ripple characteristics deteriorate. Since the ripple characteristic is deteriorated, the dispersion of the spectrum of Chip to Chip is increased. Therefore, in this embodiment, the second silicide block film 72 on the photoelectric conversion unit 21 is intentionally peeled off.

Next, a cross-sectional view corresponding to the D1-D1 ′ line position in FIG. 92 (1), a cross-sectional view corresponding to the D2-D2 ′ line position in FIG. 92 (2), and the D3-D3 ′ line in FIG. 93 (3). Description will be made with reference to a cross-sectional view corresponding to the position, a cross-section corresponding to the position of the line D4-D4 'in FIG.
First, as shown in FIG. 34, silicide layers 56, 57, 58 are formed on the source / drain regions 54, 55 and the gate electrode 52 of each MOS transistor 50 in the peripheral circuit section 13.
For the silicide layers 56, 57, 58, cobalt silicide (CoSi 2 ), nickel silicide (NiSi), titanium silicide (TiSi 2 ), platinum silicide (PtSi), tungsten silicide (WSi 2 ), or the like is used.
As an example of forming the silicide layers 56, 57, and 58, an example of forming nickel silicide will be described below.
First, a nickel (Ni) film is formed on the entire surface. This nickel film is formed to a thickness of, for example, 10 nm using, for example, a sputtering apparatus. Next, annealing is performed at about 300 ° C. to 400 ° C., the nickel film and the base are reacted with silicon to form a nickel silicide layer. Thereafter, unreacted nickel is removed by wet etching. By this wet etching, silicide layers 56, 57, and 58 are formed in a self-aligned manner only on the silicon or polysilicon surface other than the insulating film.
Thereafter, annealing is performed again at about 500 ° C. to 600 ° C. to stabilize the nickel silicide layer.
In the silicidation step, as shown in FIGS. 92 and 93, the pixel portion 12 is covered with the first silicide block film 71 and the first silicide block film 72, so that no silicide is formed. This is to eliminate white scratches and increase in dark current due to diffusion of silicide metal up to the photoelectric conversion portion 21.
Therefore, unless the impurity concentration on the surface of the source / drain regions 34 and 35 of the MOS transistor of the pixel portion 12 is increased, the contact resistance increases drastically. In this embodiment, since the impurity concentration on the surface of the source / drain regions 34 and 35 can be increased, there is an advantage that an increase in contact resistance can be relatively suppressed.

  Thereafter, as described with reference to FIGS. 35 and 36, an etching stopper film 74 is formed on the entire surface of the pixel portion 12 and the peripheral circuit portion 13. The etch back stopper film 74 is formed of, for example, a silicon nitride film. The silicon nitride film has the effect of minimizing over-etching during etching for forming contact holes. It also has the effect of suppressing an increase in junction leakage due to etching damage.

Next, in the same manner as described with reference to FIGS. 37 and 38, an interlayer insulating film 76 is formed on the etch-back stopper film 74. The interlayer insulating film 76 is formed of a silicon oxide film, for example, and has a thickness of 100 nm to 1000 nm, for example.
Next, the surface of the interlayer insulating film 76 is planarized. This planarization is performed by, for example, chemical mechanical polishing (CMP).
Next, after forming a resist mask (not shown) for forming a contact hole, for example, the interlayer insulating film 76, the etching stopper film 74, the second silicide block film 72, etc. of the pixel portion 12 are etched to form a contact. Holes 77, 78 and 79 are formed. Similarly, contact holes 81 and 82 are formed in the peripheral circuit portion 13.
In the drawing, as an example, in the pixel portion 12, contact holes 77, 78, and 79 reaching the transfer gate TRG, the gate electrode 32 of the selection transistor SEL, and the gate electrode 32 of the amplification transistor Amp are shown. In the peripheral circuit portion 13, contact holes 81 and 82 reaching the source / drain region 55 of the N channel (Nch) low breakdown voltage transistor and the source / drain region 55 of the P channel (Pch) low breakdown voltage transistor are shown. However, contact holes reaching the gate electrodes and source / drain regions of other transistors are not shown, but are formed at the same time.

Next, a plug 85 is formed in each contact hole 77 to 79, 81, 82 via an adhesion layer (not shown) and a barrier metal layer 84.
For example, a titanium (Ti) film or a tantalum (Ta) film is used for the adhesion layer, and for example, a titanium nitride film or a tantalum nitride film is used for the barrier metal layer 84.
The plug 85 can be made of tungsten (W), aluminum (Al), copper (Cu), or the like. For example, when copper (Cu) is used, for example, a tantalum film is used for the adhesion layer and a tantalum nitride film is used for the barrier metal layer 84.
Thereafter, although not shown, a multilayer wiring is formed. The multilayer wiring may be multi-layered as necessary, such as two layers, three layers, four layers,.

Next, as shown in the cross-sectional view of the pixel portion in FIG. 39, a waveguide 23 may be formed on the photoelectric conversion portion 21. Further, a condensing lens 25 may be formed to condense incident light on the photoelectric conversion unit 21.
Further, a color filter 27 for splitting light may be formed between the waveguide 23 and the condenser lens.

In the method of manufacturing the solid-state imaging device (fourth example), when the sidewall 33 of the pixel transistor portion 17 and the sidewall 53 of the peripheral circuit portion are formed, the sidewall formation film 137 (first silicide) is also formed on the floating diffusion portion FD. It is covered with a block membrane 71). For this reason, it is possible to prevent etching damage at the time of forming the sidewall in the floating diffusion portion FD. Further, the floating diffusion portion FD can be prevented from being affected by outward diffusion. As a result, the occurrence of a leak path between the element isolation region 16 and the floating diffusion portion FD is suppressed, and the occurrence of FD white scratches can be suppressed. Therefore, it is possible to manufacture a solid-state imaging device capable of imaging with high image quality. Become.
Further, the pixel is formed by two layers of a first silicide block film 71 formed of the same layer as the sidewall formation film 137 and a second silicide block film 72 formed of a film different from the first silicide block film 71. Part 12 is coated. For this reason, since the MOS transistor of the pixel portion 12 is not completely covered with a single silicide block film, random noise is reduced, and white defects and dark current are reduced.

In the description of each of the above embodiments, a P-well is formed on the N-type substrate, and the photodiode of the photoelectric conversion unit 21 is formed from the upper layer by the P + layer and the N + layer. The photodiode of the photoelectric conversion unit 21 can also be formed of an N + layer and a P + layer from the upper layer.

  Here, the reset transistor RST, the amplification transistor Amp, and the selection transistor SEL of the pixel transistor unit 17 of the solid-state imaging device will be described.

  In the reset transistor RST, a drain electrode (source / drain region 35) is connected to a reset line (not shown), and a source electrode (source / drain region 34) is connected to the floating diffusion portion FD. Prior to transfer of the signal charge to the part FD, a reset pulse is applied to the gate electrode to reset the potential of the floating diffusion part FD to a reset voltage.

  The amplification transistor Amp has a gate electrode 32 connected to the floating diffusion portion FD and a drain electrode (source / drain region 34) connected to the pixel power supply Vdd, respectively, and resets the potential of the floating diffusion portion FD after being reset by the reset transistor RST. Further, the potential of the floating diffusion portion FD after the signal charge is transferred by the transfer transistor TRG is output as the signal level.

  In the selection transistor SEL, for example, the drain electrode (source / drain region 34) is connected to the source electrode (source / drain region 35) of the amplification transistor Amp, and the source electrode (source / drain region 35) is an output signal line (not shown). Connected). When a selection pulse is applied to the gate electrode 32, the gate electrode 32 is turned on, and the pixel is selected and a signal output from the amplification transistor Amp is output to an output signal line (not shown). Note that the selection transistor SEL may be configured to be connected between the pixel power supply Vdd and the drain electrode of the amplification transistor 234.

<5. Fifth embodiment>
[Example of configuration of imaging apparatus]
Next, an embodiment of the imaging apparatus of the present invention will be described with reference to the block diagram of FIG. This imaging device uses the solid-state imaging device of the present invention.

  As shown in FIG. 94, the imaging device 200 includes a solid-state imaging device (not shown) in the imaging unit 201. An image forming optical system 202 for forming an image is provided on the light condensing side of the image pickup unit 201, and the image pickup unit 201 has an image obtained by driving a drive circuit for driving the image pickup unit 201 and a signal photoelectrically converted by the solid-state image pickup device. A signal processing unit 203 having a signal processing circuit or the like for processing is connected. The image signal processed by the signal processing unit 203 can be stored by an image storage unit (not shown). In such an imaging apparatus 200, the solid-state imaging apparatus 1 described in the above embodiment can be used as the solid-state imaging element.

  In the imaging device 200 of the present invention, since the solid-state imaging device 1 of the present invention is used, the sensitivity of the photoelectric conversion unit of each pixel is sufficiently ensured as described above. Therefore, there is an advantage that pixel characteristics such as random noise, white scratches, dark current and the like can be reduced.

  The imaging device 200 of the present invention is not limited to the above configuration, and can be applied to any configuration as long as the imaging device uses a solid-state imaging device.

  The solid-state imaging device 200 may have a form formed as a single chip, or a modular form having an imaging function in which an imaging unit and a signal processing unit or an optical system are packaged together. Also good. Moreover, the solid-state imaging device of the present invention can also be applied to such an imaging device. In this case, an effect of improving the image quality can be obtained as the imaging device. Here, the imaging device refers to, for example, a camera or a portable device having an imaging function. “Imaging” includes not only capturing an image during normal camera shooting but also fingerprint detection in a broad sense.

  DESCRIPTION OF SYMBOLS 1 ... Solid-state imaging device, 11 ... Semiconductor substrate, 12 ... Pixel part, 13 ... Peripheral circuit part, 21 ... Photoelectric conversion part, 30 ... MOS transistor, 32 ... Gate electrode, 33 ... 1st side wall, 50 ... MOS transistor, 52 ... Gate electrode, 53 ... Second sidewall, 71 ... First silicide block film, 72 ... Second silicide block film

Claims (13)

  1. A semiconductor substrate has a pixel portion including a photoelectric conversion portion that photoelectrically converts incident light to obtain an electrical signal, and a peripheral circuit portion formed around the pixel portion,
    A first sidewall formed of a sidewall formation film on a sidewall of the gate electrode of the MOS transistor of the pixel portion;
    A second sidewall formed on the sidewall of the gate electrode of the MOS transistor of the peripheral circuit portion by a film of the same layer as the sidewall formation film;
    A first silicide block film formed of a film of the same layer as the sidewall formation film on the photoelectric conversion unit and a part of the MOS transistor of the pixel unit;
    A second silicide block film overlying a portion of the first silicide block film on the MOS transistor of the pixel portion;
    A solid-state imaging device, wherein the first silicide block film and the second silicide block film cover a MOS transistor of the pixel portion.
  2. The semiconductor substrate has a floating diffusion part adjacent to the photoelectric conversion part,
    The solid-state imaging device according to claim 1, wherein the floating diffusion portion is covered with the first silicide block film.
  3. The semiconductor substrate has a floating diffusion part adjacent to the photoelectric conversion part,
    One of the MOS transistors in the pixel portion is a reset transistor,
    The solid-state imaging device according to claim 1, wherein the floating diffusion portion and a diffusion layer of the reset transistor to which the floating diffusion portion is connected are covered with the first silicide block film.
  4. The solid-state imaging device according to claim 1, wherein an overlapping portion of the first silicide block film and the second silicide block film is formed in the pixel portion.
  5. A first element isolation region in the pixel portion formed in the semiconductor substrate; and a second element isolation region in the peripheral circuit portion;
    The first element isolation region and the second element isolation region both have an STI structure,
    The first element isolation region is shallower than the second element isolation region, and the protrusion height onto the semiconductor substrate is the same between the first element isolation region and the second element isolation region. The solid-state imaging device according to claim 2.
  6. The first silicide block film has a stacked structure of a silicon oxide film and a silicon nitride film,
    The solid-state imaging device according to claim 1, wherein the second silicide block film has a stacked structure of a silicon oxide film and a silicon nitride film.
  7. When forming a pixel portion including a photoelectric conversion portion that photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion formed around the pixel portion on a semiconductor substrate,
    Forming a sidewall forming film covering the pixel portion and the peripheral circuit portion;
    A first sidewall is formed on the sidewall of the gate electrode of the MOS transistor in the pixel portion by the sidewall formation film, and a second sidewall is formed on the sidewall of the gate electrode of the MOS transistor in the peripheral circuit portion by the sidewall formation film. Forming a first silicide block film with the sidewall formation film on the photoelectric conversion portion and a part of the MOS transistor of the pixel portion;
    Forming a second silicide block film overlying a part of the first silicide block film on the MOS transistor of the pixel portion;
    A method for manufacturing a solid-state imaging device, wherein the first silicide block film and the second silicide block film cover a MOS transistor of the pixel portion.
  8. The method for manufacturing a solid-state imaging device according to claim 7, wherein the first silicide block film covers a floating diffusion portion formed adjacent to the photoelectric conversion portion.
  9. The first silicide block film covers a floating diffusion portion formed adjacent to the photoelectric conversion portion, and a part of the MOS transistor covered by the first silicide block film is a diffusion layer of a reset transistor. Item 9. A method for manufacturing a solid-state imaging device according to Item 8.
  10. 10. The method for manufacturing a solid-state imaging device according to claim 8, wherein an overlapping portion of the first silicide block film and the second silicide block film is formed in the pixel portion.
  11. When forming a first element isolation region in the pixel portion formed in the semiconductor substrate and a second element isolation region in the peripheral circuit portion,
    The first element isolation region and the second element isolation region are both formed in an STI structure,
    The first element isolation region is shallower than the second element isolation region, and the protrusion height onto the semiconductor substrate is the same between the first element isolation region and the second element isolation region. A method for manufacturing a solid-state imaging device according to claim 8 or 9.
  12. The first silicide block film is formed in a stacked structure of a silicon oxide film and a silicon nitride film,
    The method for manufacturing a solid-state imaging device according to claim 7, wherein the second silicide block film is formed in a stacked structure of a silicon oxide film and a silicon nitride film.
  13. A condensing optical unit that condenses incident light;
    An imaging unit having a solid-state imaging device that receives and photoelectrically converts light collected by the condensing optical unit;
    A signal processing unit that processes an electrical signal that is photoelectrically converted and output by the solid-state imaging device;
    The solid-state imaging device
    A semiconductor substrate has a pixel portion including a photoelectric conversion portion that photoelectrically converts incident light to obtain an electrical signal, and a peripheral circuit portion formed around the pixel portion,
    A first sidewall formed of a sidewall formation film on a sidewall of the gate electrode of the MOS transistor of the pixel portion;
    A second sidewall formed on the sidewall of the gate electrode of the MOS transistor of the peripheral circuit portion by a film of the same layer as the sidewall formation film;
    A first silicide block film formed of a film of the same layer as the sidewall formation film on the photoelectric conversion unit and a part of the MOS transistor of the pixel unit;
    A second silicide block film overlying a portion of the first silicide block film on the MOS transistor of the pixel portion;
    The imaging device, wherein the first silicide block film and the second silicide block film cover the MOS transistor of the pixel portion.
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243747A (en) * 2010-05-18 2011-12-01 Canon Inc Photoelectric conversion device and camera
WO2014002362A1 (en) * 2012-06-26 2014-01-03 パナソニック株式会社 Solid-state image pickup apparatus and method for manufacturing same
JP2015090971A (en) * 2013-11-07 2015-05-11 ルネサスエレクトロニクス株式会社 Solid state image pickup element and manufacturing method of the same
JP2016092081A (en) * 2014-10-30 2016-05-23 キヤノン株式会社 Photoelectric conversion device, and manufacturing method of photoelectric conversion device
US9437651B2 (en) 2013-12-04 2016-09-06 Canon Kabushiki Kaisha Method of manufacturing imaging device
JP2016171345A (en) * 2011-09-01 2016-09-23 キヤノン株式会社 Solid state image pickup device
US9608033B2 (en) 2014-05-12 2017-03-28 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP2017130693A (en) * 2017-04-13 2017-07-27 ルネサスエレクトロニクス株式会社 Image pickup device and manufacturing method thereof
JP2017220673A (en) * 2017-07-24 2017-12-14 ルネサスエレクトロニクス株式会社 Method for manufacturing imaging apparatus, and imaging apparatus
US10134869B2 (en) 2015-12-28 2018-11-20 Renesas Electronics Corporation Method of manufacturing semiconductor device
DE102018116281A1 (en) 2017-07-11 2019-01-17 Canon Kabushiki Kaisha Photoelectric conversion device, photoelectric conversion equipment and method of manufacturing a photoelectric conversion device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013045878A (en) * 2011-08-24 2013-03-04 Sony Corp Solid state image pickup device, solid state image pickup device manufacturing method and electronic apparatus
JP5563166B2 (en) * 2011-08-30 2014-07-30 富士フイルム株式会社 Solid-state imaging device and digital camera
KR20160021440A (en) * 2013-06-14 2016-02-25 르네사스 일렉트로닉스 가부시키가이샤 Imaging device production method and imaging device
US8933494B1 (en) * 2013-09-26 2015-01-13 Omnivision Technologies, Inc. Image sensor pixel cell having dual self-aligned implants next to storage gate
US10079261B1 (en) * 2017-08-17 2018-09-18 Omnivision Technologies, Inc. Raised electrode to reduce dark current

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096421A1 (en) * 2002-05-14 2003-11-20 Sony Corporation Semiconductor device and its manufacturing method, and electronic device
JP2006216615A (en) * 2005-02-01 2006-08-17 Sony Corp Cmos solid-state image pickup device and manufacturing method thereof
JP2006261411A (en) * 2005-03-17 2006-09-28 Fujitsu Ltd Image sensor having buried photodiode region, and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4345794B2 (en) * 2006-09-28 2009-10-14 ソニー株式会社 Manufacturing method of solid-state imaging device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096421A1 (en) * 2002-05-14 2003-11-20 Sony Corporation Semiconductor device and its manufacturing method, and electronic device
JP2006216615A (en) * 2005-02-01 2006-08-17 Sony Corp Cmos solid-state image pickup device and manufacturing method thereof
JP2006261411A (en) * 2005-03-17 2006-09-28 Fujitsu Ltd Image sensor having buried photodiode region, and manufacturing method thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011243747A (en) * 2010-05-18 2011-12-01 Canon Inc Photoelectric conversion device and camera
JP2016171345A (en) * 2011-09-01 2016-09-23 キヤノン株式会社 Solid state image pickup device
WO2014002362A1 (en) * 2012-06-26 2014-01-03 パナソニック株式会社 Solid-state image pickup apparatus and method for manufacturing same
JP2015090971A (en) * 2013-11-07 2015-05-11 ルネサスエレクトロニクス株式会社 Solid state image pickup element and manufacturing method of the same
US9437651B2 (en) 2013-12-04 2016-09-06 Canon Kabushiki Kaisha Method of manufacturing imaging device
US9608033B2 (en) 2014-05-12 2017-03-28 Canon Kabushiki Kaisha Solid-state image sensor, method of manufacturing the same, and camera
JP2016092081A (en) * 2014-10-30 2016-05-23 キヤノン株式会社 Photoelectric conversion device, and manufacturing method of photoelectric conversion device
US10263029B2 (en) 2014-10-30 2019-04-16 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method of the photoelectric conversion device
US10134869B2 (en) 2015-12-28 2018-11-20 Renesas Electronics Corporation Method of manufacturing semiconductor device
JP2017130693A (en) * 2017-04-13 2017-07-27 ルネサスエレクトロニクス株式会社 Image pickup device and manufacturing method thereof
DE102018116281A1 (en) 2017-07-11 2019-01-17 Canon Kabushiki Kaisha Photoelectric conversion device, photoelectric conversion equipment and method of manufacturing a photoelectric conversion device
GB2568129A (en) * 2017-07-11 2019-05-08 Canon Kk Photoelectric conversion apparatus, equipment including photoelectric conversion apparatus, and manufacturing method of photoelectric conversion apparatus
JP2017220673A (en) * 2017-07-24 2017-12-14 ルネサスエレクトロニクス株式会社 Method for manufacturing imaging apparatus, and imaging apparatus

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