JP2010038763A - Manufacturing method of sensor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a sensor device that can be handled easily. <P>SOLUTION: In the manufacturing method of the sensor device, the following processes are performed, namely a first process for forming signal lines 33-35 on a flexible board 31 and a second process for film-forming a sensor material for forming a sensor element 32 to the flexible board where a signal line is formed. Furthermore, the following processes are executed, namely a third process for forming a photoresist to a formation region of the sensor element in a film formation layer 32a obtained in the second process, a fourth process for performing dry etching to a region other than a region where the photoresist is formed in the film formation layer, and a fifth process for performing ashing treatment to a photoresist and a region other than a region where the photoresist is formed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a sensor device including a flexible substrate.

  It is known that when the secondary battery becomes hot or cold, the performance of the secondary battery is degraded. For this reason, there is a battery that detects the temperature of the secondary battery and controls charging / discharging of the secondary battery based on the detection result.

Here, the internal temperature of the secondary battery tends to be higher than the temperature of other portions due to heat dissipation and the like. Therefore, in the secondary battery described in Patent Document 1, the temperature inside the secondary battery is detected by attaching a thermocouple to the core around which the laminated electrode body is wound and measuring the voltage value at both ends of the thermocouple. I am doing so.
JP-A-10-55825 (paragraphs 0017, 0021, FIG. 2, etc.)

  Here, Patent Document 1 does not describe any specific configuration for connecting a temperature measurement terminal and a thermocouple. If the terminal and the thermocouple are connected via wiring, it may be difficult to attach the thermocouple to the secondary battery.

  An object of the present invention is to provide a method of manufacturing a sensor device that is easy to handle.

  The present invention is a method for manufacturing a sensor device in which a sensor element and a signal line connected to the sensor element are formed on a flexible substrate, the first step of forming the signal line on the flexible substrate, and the formation of the signal line A second step of forming a sensor material for forming a sensor element on the flexible substrate. Further, among the film formation layer obtained in the second step, a third step of forming a photoresist on the formation region of the sensor element, and a region of the film formation layer other than the region where the photoresist is formed A fourth step of performing a dry etching process and a fifth process of performing an ashing process on a region other than the photoresist and the region where the photoresist is formed.

  In the first step, the signal line can be formed by forming a layer made of the signal line material on the flexible substrate and performing wet etching on the layer. Further, in the fourth step, dry etching treatment can be performed in an argon atmosphere, and in the fifth step, ashing treatment can be performed in an oxygen atmosphere.

  After performing the fifth step, a sixth step of covering the flexible substrate on which the signal line and the sensor element are formed with an insulating film can be performed. Thereby, since the sensor device is covered with an insulating film, the sensor device manufactured according to the present invention can be disposed, for example, inside the power storage device.

  The flexible substrate can be formed of polyimide. Platinum can be used as the sensor material. The signal line can be formed of copper.

  The sensor device obtained by the manufacturing method of the present invention can be used for detecting the temperature of an object. Here, examples of the object include a power storage device. As the sensor element, a thin film thermistor element can be used.

  In the present invention, since the sensor element and the signal line are formed on the flexible substrate, the sensor device can be easily handled. In addition, the ashing process can remove not only the photoresist but also the sensor material remaining in the region other than the region where the photoresist is formed. Thereby, the precision regarding the shape of a sensor element can be improved.

  Examples of the present invention will be described below.

  A single battery (power storage device) as a secondary battery that is Embodiment 1 of the present invention will be described.

  FIG. 1 and FIG. 2 are diagrams showing the configuration of the unit cell of this example, and also show the configuration inside the unit cell. Here, in FIGS. 1 and 2, the X axis, the Y axis, and the Z axis indicate axes that are orthogonal to each other. 1 and 2 are views when viewed from different directions with respect to the X axis.

  The unit cell 1 includes a battery case 10 and a power generation element 11 accommodated inside the battery case 10. The power generation element 11 is an element that can be charged and discharged, and is housed in a wound state inside the battery case 10 as shown in FIG. Here, FIG. 3 is a cross-sectional view of the unit cell 1 taken along the XZ plane. In the present embodiment, a secondary battery is used as the single battery 1, but an electric double layer capacitor may be used instead of the secondary battery.

  As shown in FIG. 4, the power generation element 11 includes a positive electrode element 12, a negative electrode element 13, and a separator 14 that is disposed between the positive electrode element 12 and the negative electrode element 13 and contains an electrolytic solution. Here, the positive electrode element 12 has a current collecting plate and a positive electrode layer formed on the surface of the current collecting plate. The positive electrode layer can be formed on one side or both sides of the current collector plate. The positive electrode layer is a layer containing an active material, a conductive agent, or the like corresponding to the positive electrode.

  Moreover, the negative electrode element 13 has a current collecting plate and a negative electrode layer formed on the surface of the current collecting plate. The negative electrode layer can be formed on one side or both sides of the current collector plate. The negative electrode layer is a layer containing an active material, a conductive agent, or the like corresponding to the negative electrode.

  It is also possible to use an electrode (a so-called bipolar electrode) in which a positive electrode layer is formed on one surface of the current collector and a negative electrode layer is formed on the other surface of the current collector. In this embodiment, an electrolytic solution is used, but a solid electrolyte formed of particles can also be used. Examples of the solid electrolyte include a polymer solid electrolyte and an inorganic solid electrolyte. Furthermore, in this embodiment, as shown in FIGS. 1 to 3, the unit cell 1 has a so-called square configuration, but the present invention is not limited to this, and a so-called cylindrical configuration can also be used. That is, the battery case 10 may be rectangular or cylindrical, and the power generation element 11 may be wound so that the battery case 10 is accommodated inside the battery case 10. Here, in this embodiment, the power generation element 11 is wound, but the present invention is not limited to this. Specifically, a plurality of positive electrode elements and a plurality of negative electrode elements are prepared, and these positive electrode elements and negative electrode elements can be alternately stacked with a separator interposed therebetween.

Here, when a nickel-hydrogen battery is used as the unit cell 1, nickel oxide is used as the active material for the positive electrode layer, and MmNi _(5-xyz) Al _x Mn is used as the active material for the negative electrode layer. A hydrogen storage alloy such as _y Co _z (Mm: Misch metal) can be used. When a lithium ion battery is used as the unit cell 1, a lithium-transition metal composite oxide can be used as the active material for the positive electrode layer, and carbon can be used as the active material for the negative electrode layer. As the conductive agent, acetylene black, carbon black, graphite, carbon fiber, or carbon nanotube can be used.

  1 and 2, a positive electrode terminal 21 is electrically and mechanically connected to the positive electrode tab 12 a connected to the positive electrode element 12 of the power generation element 11. Here, the positive electrode tab 12a connected to the positive electrode terminal 21 protrudes from one end portion in the Y direction of the power generation element 11 in a wound state, as shown in FIGS. The positive electrode tab 12a can be configured integrally with the current collector plate of the positive electrode element 12, or can be configured separately.

  A negative electrode terminal 22 is electrically and mechanically connected to the negative electrode tab 13 a connected to the negative electrode element 13 of the power generation element 11. Here, the negative electrode tab 13a connected to the negative electrode terminal 22 protrudes from the other end portion in the Y direction of the power generation element 11 in the wound state. The negative electrode tab 13a can be configured integrally with the current collector plate of the negative electrode element 13, or can be configured separately.

  The positive electrode terminal 21 and the negative electrode terminal 22 protrude from the upper surface of the battery case 10 and are electrically connected to an electronic device (not shown) via wiring (not shown). Thereby, an electronic device can be driven using the output of the cell 1.

  Here, when the unit cell 1 is used as a vehicle drive source, a plurality of unit cells 1 are prepared, and the unit cell 1 can be electrically connected in series to constitute a battery module. it can. And energy required for driving | running | working of a vehicle can be taken out from this battery module. In addition, the positive electrode terminal 21 and the negative electrode terminal 22 in each unit cell 1 are electrically connected to the positive electrode terminal 21 and the negative electrode terminal 22 in the other unit cell 1 via a bus bar. Further, examples of the vehicle including the battery module include a hybrid vehicle used together with another power source such as an internal combustion engine or a fuel cell, and an electric vehicle including only the battery module as a power source.

  On the other hand, as shown in FIG. 3, a sensor unit (sensor device) 30 used for temperature detection is disposed on the outer periphery of the power generation element 11. Here, the sensor unit 30 is located between the outermost surface of the power generation element 11 and the inner wall surface of the battery case 10, and is in contact with the outermost surface of the power generation element 11. As shown in FIG. 5, the sensor unit 30 includes a flexible substrate 31, two thermistor elements (sensor elements) 32 and signal lines 33 to 35 formed on the surface of the flexible substrate 31. Here, as a material of the flexible substrate 31, for example, polyimide or tetrafluoroethylene can be used. However, the material is not limited to this, and any material can be used as long as it can constitute a flexible substrate. You can also. The signal line 33 is a GND wiring, and is provided in common for the two thermistor elements 32. Thereby, the number of signal lines can be reduced as compared with the case where GND wiring is provided for each thermistor element 32. The shape of the signal lines 33 to 35 is not limited to the pattern shown in FIG. 5 and can be set as appropriate.

  As shown in FIG. 6, the flexible substrate 31 on which the thermistor element 32 and the signal lines 33 to 35 are formed is covered with a protective film 36 having an insulating property. Specifically, the flexible substrate 31 on which the thermistor element 32 and the signal lines 33 to 35 are formed is sandwiched between two sheet-like protective films 36 and the outer edge portions of the two protective films 36 are fixed to each other. Here, FIG. 6 is a BB cross-sectional view in FIG.

  The protective film 36 is made of an insulating material, and as this material, for example, a polymer resin such as polypropylene can be used. The protective film 36 may be any structure as long as it covers the flexible substrate 31 on which the thermistor element 32 and the signal lines 33 to 35 are formed. For example, the material constituting the protective film 36 can be coated on the surface of the flexible substrate 31 on which the thermistor element 32 and the signal lines 33 to 35 are formed.

  As shown in FIG. 5, the sensor unit 30 includes a sensor unit A1 that is a region in which the thermistor element 32 is mainly formed, and a wiring unit A2 that is a region in which the signal lines 33 to 35 are mainly formed. ing. As shown in FIG. 1, the sensor unit A <b> 1 of the sensor unit 30 is located on the outer periphery of the wound power generation element 11 and is in contact with the power generation element 11. Moreover, as shown in FIG.1 and FIG.2, the wiring part A2 is arrange | positioned along the outer periphery of the electric power generation element 11, and is extended in the opposite side to the side in which sensor part A1 is located with respect to the electric power generation element 11. Yes. That is, by bending a part of the wiring portion A2 along the power generation element 11, the sensor unit 30 can be formed in the shape shown in FIGS.

  Moreover, wiring part A2 is connected to the temperature detection terminal 23 provided in the upper surface of the cell 1 (battery case 10). The temperature detection terminal 23 is located between the positive terminal 21 and the negative terminal 22.

  As shown in FIG. 6, the signal line 33 has two regions 33a and 33b having different thicknesses. Here, the thickness of the region 33b is smaller than the thickness of the region 33a. Similarly, the signal line 35 has two regions 35a and 35b having different thicknesses. Here, the thickness of the region 35b is smaller than the thickness of the region 35a. Although not shown, the signal line 34 has the same configuration as the signal lines 33 and 35.

  In the present embodiment, the thermistor element 32 is brought into contact with the regions 33b and 35b on the thin side of the signal lines 33 and 35. In other words, the regions 33 b and 35 b of the signal lines 33 and 35 are brought into contact with both ends of the thermistor element 32. Here, the thermistor element 32 has a substantially uniform thickness in all regions, and is formed along the surfaces of the flexible substrate 31 and the signal lines 33 and 35 (regions 33b and 35b). Note that the thermistor element 32 is also in contact with the signal lines 33 and 34 in the same configuration as described above. By configuring the signal lines 33 and 35 as in the present embodiment, it is possible to suppress the thermistor element 32 from being peeled off from the signal lines 33 and 35.

  Here, in the configuration in which the thermistor element 32 is in contact with the thicker regions 33a and 35a of the signal lines 33 and 35, when the flexible substrate 31 is bent, the thermistor element is caused by bending stress. 32 may be peeled off from the signal lines 33 and 35. Therefore, as in this embodiment, it is possible to suppress the thermistor element 32 from being peeled off from the signal lines 33 and 35 by bringing the thermistor element 32 into contact with the thin regions 33b and 35b. it can. On the other hand, by making the thickness of the regions 33 a and 35 a not in contact with the thermistor element 32 of the signal lines 33 and 35 larger than the thickness of the regions 33 b and 35 b in contact with the thermistor element 32, It can suppress that resistance value becomes high.

  On the other hand, the peelability of the thermistor element 32 from the flexible substrate 31 may also change depending on the surface roughness (for example, arithmetic average roughness Ra) of the flexible substrate 31. That is, as the surface roughness of the flexible substrate 31 decreases, the thermistor element 32 is easily peeled off from the flexible substrate 31, and as the surface roughness of the flexible substrate 31 increases, the thermistor element 32 becomes difficult to peel off from the flexible substrate 31.

  In this embodiment, two regions having different thicknesses are provided for the signal lines 33 to 35, but the present invention is not limited to this. That is, the thickness of each signal line 33 to 35 can be made substantially uniform (including an error), or three or more regions having different thicknesses can be provided for each signal line 33 to 35. it can. Here, when three or more regions are provided, the thermistor element 32 may be brought into contact with the region where the thickness is the thinnest. In the present embodiment, the thicknesses of the signal lines 33 to 35 are changed stepwise, but can be changed continuously. In this case, the thermistor element 32 may be brought into contact with the region where the thickness of each of the signal lines 33 to 35 is reduced.

  Each thermistor element 32 is formed of a thin film, and as the material of the thermistor element 32, for example, platinum or titanium can be used. The film thickness of the thermistor element 32 can be set as appropriate. However, if the film is too thick, an excessive load may be applied to the power generation element 11 in the wound state. Then, the film thickness may be set.

  Since the resistance value of the thermistor element 32 changes according to the temperature change, the temperature of the unit cell 1 (power generation element 11) can be measured by detecting the change of the resistance value in the thermistor element 32 by the controller. . In this embodiment, since the two thermistor elements 32 are provided at different positions in the sensor unit A1, temperatures at different positions can be measured.

  On the other hand, the temperature detection terminal 23 is connected to a controller (not shown) via wiring (not shown). Thereby, the controller can perform charge / discharge control of the single cell 1 and temperature control of the single cell 1 based on the temperature detected using the thermistor element 32.

  For example, when the temperature of the unit cell 1 rises, the controller can suppress charging / discharging of the unit cell 1 and suppress temperature increase accompanying charging / discharging. Further, when the temperature of the unit cell 1 rises, the controller can cool the unit cell 1 using the cooling medium by driving a fan or the like. As the cooling medium, a gas such as air or a liquid can be used. On the other hand, when the temperature of the unit cell 1 decreases, the controller can heat the unit cell 1 by driving the heater or the like, thereby heating the unit cell 1. In addition, when mounting the cell 1 in a vehicle, it can serve as the controller which controls the driving state of a vehicle as a controller mentioned above.

  According to the present embodiment, if the sensor unit 30 shown in FIG. 5 is prepared, it can be incorporated into the power generation element 11 having an existing shape. That is, it is only necessary to attach the sensor unit 30 to the power generation element 11 in a wound state, and it is not necessary to change the configuration of the power generation element 11.

  Moreover, since the sensor unit 30 is integrally formed using the flexible substrate 31, the sensor unit 30 can be easily handled when the unit cell 1 is manufactured. And since the signal lines 33-35 are integrally formed in the flexible substrate 31, compared with the case where only the signal lines 33-35 are used, wiring can be performed easily.

  Further, since the thin film thermistor element 32 is used, even if the sensor unit 30 is incorporated in the power generation element 11, it is possible to suppress the occurrence of load bias in the power generation element 11 due to the weight of the sensor unit 30. Here, in the secondary battery described in Patent Document 1, a thermocouple is used, but the thermocouple is generally made of a metal body and has higher rigidity than the electrode element. For this reason, in the secondary battery of patent document 1, the load to an electrode element will become large in the position in which the thermocouple was provided rather than another position. Furthermore, since the sensor unit 30 includes the flexible substrate 31, the sensor unit 30 can be disposed along the power generation element 11, and the sensor unit 30 does not apply an excessive load to the power generation element 11.

  In the present embodiment, the case where two thermistor elements 32 are used has been described, but one thermistor element or three or more thermistor elements may be used. In this case, the position where temperature detection can be performed can be set by the number of thermistor elements 32. If temperature detection is performed at a plurality of positions, temperature information at different positions can be obtained. On the other hand, instead of the thin film thermistor element 32, a thin film thermocouple may be used.

  Furthermore, in the present embodiment, the sensor unit A1 of the sensor unit 30 is disposed on the outer periphery of the power generation element 11 in a wound state. However, the present invention is not limited to this and may be disposed at other positions. Specifically, it can be arranged in a portion other than the outer periphery of the power generation element 11 where the power generation elements 11 are arranged to overlap each other. That is, the sensor unit 30 of the present embodiment can be incorporated at any position in the power generation element 11, and the position where the sensor unit 30 is provided can be changed as appropriate. For example, the sensor unit A1 of the sensor unit 30 can be arranged at the center of the power generation element 11 in a wound state. In this case, if the size of the sensor part A1 is set to be approximately equal to the space formed in the center part of the power generation element 11, the sensor part A1 can be easily positioned with respect to the center part of the power generation element 11. Can be done. Thereby, the precision of the position where temperature detection is performed using the thermistor element 32 can be improved. Moreover, since the sensor unit 30 can bend, it can also be arrange | positioned in the part which has a curvature among the electric power generation elements 11. FIG.

  Next, a method for manufacturing the sensor unit 30 will be described with reference to FIGS. 7 and 8A to 8E. Here, FIG. 7 is a flowchart showing a manufacturing process of the sensor unit 30. 8A to 8D are cross-sectional views of an intermediate body obtained in the middle of the manufacturing process of the sensor unit 30, and FIG. 8E is a cross-sectional view of the sensor unit as a final product. 8A to 8E correspond to FIG.

  In step S10 of FIG. 7, a layer made of the material of the signal lines 33 to 35 is applied to the surface of the flexible substrate 31 by applying a material for forming the signal lines 33 to 35 as shown in FIG. 8A. 37 is formed. Here, as a material of the signal lines 33 to 35, for example, copper can be used. Moreover, the thickness of the layer 37 should just be more than the thickness of each signal line 33-35. Furthermore, as a material of the flexible substrate 31, for example, polyimide or tetrafluoroethylene can be used.

  In step S11, the signal lines 33 to 35 shown in FIG. 5 are formed by performing wet etching on the layer 37 obtained in step S10. Here, FIG. 8B shows the signal lines 33 and 35 formed by wet etching. 8B shows only the signal lines 33 and 35, the signal line 34 is also formed. Since each signal line 33 to 35 in the present embodiment has two regions having different thicknesses as described above, a predetermined thickness is obtained by performing wet etching on these regions. .

  Here, the method of forming the signal lines 33 to 35 is not limited to the method described above. That is, any method may be used as long as the signal lines 33 to 35 having a predetermined pattern are obtained. Specifically, a region other than the region corresponding to the signal lines 33 to 35 in the layer 37 can be mechanically removed. In this case, it is not necessary to use chemicals or a mask unlike wet etching.

  In step S12, film formation is performed by applying a material (sensor material) constituting the thermistor element 32 to the entire surface of the flexible substrate 31 on which the signal lines 33 to 35 are formed. As a result, the signal lines 33 to 35 are covered with the film formation layer 32a formed of the sensor material, as shown in FIG. 8C. Here, the thickness of the film formation layer 32 a is equal to the thickness of the thermistor element 32. In the present embodiment, the entire surface of the flexible substrate 31 on which the signal lines 33 to 35 are formed is covered with the film formation layer 32a, but the present invention is not limited to this. That is, at least a region where the thermistor element 32 is formed may be covered with the film formation layer 32a.

  In step S13, a photoresist is formed in a region of the film formation layer 32a where the thermistor element 32 is to be formed. In step S14, the sensor material in the region other than the region where the photoresist is formed in the film formation layer 32a is removed by performing dry etching. The dry etching can be performed using, for example, an etching apparatus in which an anode and a cathode are arranged to face each other in a chamber.

  Specifically, the intermediate having the configuration shown in FIG. 8C is arranged with respect to one of the anode and the cathode. Then, plasma is generated by applying a high-frequency voltage between the cathode and the anode in an atmosphere such as argon gas. The plasma removes the sensor material in the region other than the region where the photoresist is formed in the film formation layer 32a. As a result, the signal lines 33 to 35 and the film formation layer 32 a covered with the photoresist are formed on the surface of the flexible substrate 31. Here, the film-forming layer 32 a covered with the photoresist becomes the thermistor element 32.

  In step S15, the photoresist on the film formation layer 32a is removed by ashing using a resist stripping apparatus (ashing apparatus). Thereby, the intermediate body of the structure shown to FIG. 8D is obtained. Here, examples of the ashing device include an optical excitation ashing device and a plasma ashing device.

In the photo-excited ashing apparatus, the photoresist can be removed by introducing a gas such as ozone or oxygen into the ashing chamber, irradiating the gas or the photoresist with light such as ultraviolet rays, and chemically reacting the gas and the photoresist. it can. That is, the photoresist is decomposed into CO _X and H ₂ O by the reaction gas. Examples of the photoexcited ashing device include an ozone ashing device and a UV ozone ashing device in which an ultraviolet lamp is attached to the ozone ashing device.

  Further, in the plasma ashing apparatus, the photoresist can be removed by converting oxygen gas into plasma by high frequency or the like and using this plasma. As a plasma ashing device, there are a so-called barrel type, parallel plate type, and downflow type.

  Here, when dry etching is performed in step S <b> 14, the sensor material (a part of the film formation layer 32 a) may remain on the flexible substrate 31. That is, the sensor material may remain in a region other than the region where the photoresist is formed. In particular, as the surface roughness of the flexible substrate 31 increases, the sensor material may easily remain on the surface of the flexible substrate 31.

  In this case, the insulation resistance of the thermistor element 32 is lowered. Further, since the thermistor element 32 is an element whose resistance value changes according to a temperature change as described above, if the sensor material remains in a region different from the region where the thermistor element 32 is originally formed, the temperature detection is performed. Accuracy may be reduced.

  The applicant of the present application has found that not only the photoresist can be removed but also the sensor material remaining on the flexible substrate 31 can be removed by ashing the intermediate after the dry etching in step S14. . That is, it was found that the sensor material remaining in the region other than the region where the photoresist was formed can be removed by ashing.

  As described above, the insulation resistance of the thermistor element 32 can be improved by removing the sensor material remaining in a region different from the region where the thermistor element 32 is originally formed. Specifically, the insulation resistance of the thermistor element 32 can be 100 MΩ or more. In addition, the insulation of the thermistor element 32 can be ensured. Moreover, the resistance value of the thermistor element 32 can be set to a designed value, and the accuracy of temperature detection using the thermistor element 32 can be improved.

  In step S16, the intermediate body having the configuration shown in FIG. 8D is covered with a protective film 36 having an insulating property. Thereby, as shown to FIG. 8E, the sensor unit 30 as a final product is obtained.

  In the present embodiment, the sensor unit 30 is used to detect the temperature of the unit cell 1 (power generation element 11), but the present invention is not limited to this. That is, the sensor unit 30 of the present embodiment can be used to detect the temperature of an object different from the unit cell 1.

  The thermistor element 32 is used to detect temperature, but is not limited to this. Specifically, the pressure can be detected using the same configuration as the thermistor element 32 of the present embodiment. Furthermore, since the thermistor element 32 is formed of a conductive material, it can generate heat when energized. In other words, the same function as the thermistor element 32 of the present embodiment can be used to provide a function as a heater. Such a configuration can also be manufactured by the manufacturing method described in FIGS. 7 and 8A to 8E.

It is a figure which shows the internal structure of the cell which is Example 1 of this invention. 1 is a diagram illustrating an internal structure of a single cell that is Example 1. FIG. In the cell of Example 1, it is sectional drawing which shows the arrangement | positioning state of an electric power generation element and a sensor unit. It is the schematic which shows the structure of an electric power generation element. It is a front view which shows the structure of a sensor unit. It is sectional drawing of a sensor unit, and is BB sectional drawing of FIG. It is a flowchart which shows the manufacturing method of a sensor unit. It is a figure explaining the manufacturing method of a sensor unit. It is a figure explaining the manufacturing method of a sensor unit. It is a figure explaining the manufacturing method of a sensor unit. It is a figure explaining the manufacturing method of a sensor unit. It is a figure explaining the manufacturing method of a sensor unit.

Explanation of symbols

1: Cell 10: Battery case 11: Power generation element 30: Sensor unit (sensor device)
31: Flexible substrate 32: Thermistor element (sensor element)
33-35: Signal line

Claims (11)

A sensor device and a method of manufacturing a sensor device in which a signal line connected to the sensor element is formed on a flexible substrate,
A first step of forming the signal line on the flexible substrate;
A second step of depositing a sensor material for forming the sensor element on the flexible substrate on which the signal line is formed;
A third step of forming a photoresist in a formation region of the sensor element among the film formation layers obtained in the second step;
A fourth step of performing a dry etching process on a region other than the region where the photoresist is formed in the deposited layer;
A method of manufacturing a sensor device, comprising: a fifth step of performing an ashing process on a region other than the region where the photoresist and the photoresist are formed.   In the first step, the signal line is formed by forming a layer made of the material of the signal line on the flexible substrate and performing wet etching on the layer. Item 2. A method for manufacturing the sensor device according to Item 1.   3. The method of manufacturing a sensor device according to claim 1, wherein in the fourth step, the dry etching process is performed in an argon atmosphere.   4. The sensor according to claim 1, wherein, in the fifth step, the sensor material remaining in a region other than the region where the photoresist is formed is removed by the ashing process. 5. Device manufacturing method.   5. The method of manufacturing a sensor device according to claim 1, wherein in the fifth step, the ashing process is performed in an oxygen atmosphere.   6. The sensor according to claim 1, further comprising a sixth step of covering the flexible substrate on which the signal line and the sensor element are formed with an insulating film after the fifth step. Device manufacturing method.   The method for manufacturing a sensor device according to claim 1, wherein the flexible substrate is made of polyimide.   The method for manufacturing a sensor device according to any one of claims 1 to 7, wherein the sensor material is platinum.   The method of manufacturing a sensor device according to claim 1, wherein the signal line is made of copper.   The method of manufacturing a sensor device according to claim 1, wherein the sensor element is an element used for temperature detection. The method of manufacturing a sensor device according to claim 10, wherein the sensor element is a thin film thermistor element.

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