JP2010030057A - Imprint mold, imprint apparatus, imprint mold manufacturing method, and structure manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imprint mold which can suppress a defective transfer and has a long life, an imprint apparatus, an imprint manufacturing method, and a structure manufacturing method. <P>SOLUTION: The imprint mold includes a base part containing a metal and/or an inorganic material, a pattern part which is installed on the first main surface of the base part and contains the metal and/or the inorganic material, and a cushioning part which is installed on the second main surface opposite to the first main surface of the base part and includes an organic material, and the pattern part imitates the shape of the main surface of a substrate on which a layer to be transferred is formed by the deflection of the base part and the cushioning part. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to an imprint mold, an imprint apparatus, an imprint mold manufacturing method, and a structure manufacturing method.

  An imprint method is known as a technique capable of mass-producing semiconductor devices and optical elements at a low cost. In the imprint method, the pattern is transferred to the resin on the substrate by mechanically pressing the imprint mold (mold) on which the concavo-convex pattern is formed by electron beam lithography or the like to the resin applied on the substrate. Technology.

  The imprint mold used for this imprint method includes a so-called hard mold and soft mold. Hard molds are made of hard materials such as quartz, nickel (Ni), silicon (Si), etc. Soft molds are polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), etc. It is formed using a soft material.

  Since the hard mold is formed of a hard material, the resolution and pattern transfer accuracy are high. However, when transfer is performed on a substrate with low flatness such as a glass substrate or a compound semiconductor substrate, it is difficult to cope with the distortion of the substrate and it is difficult to transfer a large area at once.

  On the other hand, since the soft mold is made of a soft material, it can cope with the distortion of the substrate. Therefore, it is possible to transfer a large area at once. However, there is a problem that the resolution and pattern transfer accuracy are lower than those of the hard mold.

Here, an imprint type in which a layer made of a soft material is provided between a soft mold made of a relatively hard material and a base has been proposed (see Non-Patent Document 1). According to the technique disclosed in Non-Patent Document 1, it is possible to cope with distortion of a substrate by bending a layer made of a soft material. However, the strength of the soft mold made of a relatively hard material may be low and the life may be shortened. In addition, the resolution and pattern transfer accuracy may be lower than that of the hard mold.
Feng Hua, et.al., IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL.5, NO.3, P.301-P.308, MAY, 2006

  The present invention provides an imprint mold, an imprint apparatus, a method for manufacturing an imprint mold, and a method for manufacturing a structure that can suppress transfer defects and have a long mold life.

  According to one aspect of the present invention, a base portion including at least one of a metal and an inorganic material, a pattern portion provided on the first main surface of the base portion and including at least one of a metal and an inorganic material, A buffer portion including an organic material provided on a second main surface opposite to the first main surface of the base portion, and the base layer and the buffer portion are bent so that the layer to be transferred There is provided an imprint mold characterized in that the pattern portion follows the shape of the main surface of the substrate provided with.

  According to another aspect of the present invention, the imprint mold, the holding means for holding the imprint mold, the pressing means for raising and lowering the holding means, and the holding means are provided. There is provided an imprint apparatus comprising: a mounting table on which a substrate provided with a transfer layer is mounted.

  According to another aspect of the present invention, a pattern portion is formed on a first main surface of a first flat plate-like member containing a metal or an inorganic material, and the first flat plate-like member has the first portion. Forming a base having a predetermined thickness by processing the second main surface opposite to the main surface, and forming a base by processing a second flat plate member containing a metal or an inorganic material; There is provided an imprint type manufacturing method, wherein a buffer part including an organic material is formed on a main surface of the base, and the buffer part and the base part are joined.

  Moreover, according to the other one aspect | mode of this invention, the 1st flat plate member containing a metal or an inorganic material is processed into a predetermined thickness dimension, and the 1st flat plate member processed into the said predetermined thickness dimension is used. A pattern portion is formed on the first main surface, a base portion is formed, a second flat plate member containing a metal or an inorganic material is processed to form a base, and an organic material is formed on the main surface of the base An imprint mold manufacturing method is provided, wherein a buffer portion including the buffer portion is formed, and the buffer portion and the base portion are joined.

  According to another aspect of the present invention, there is provided a method for manufacturing a structure, characterized in that an uneven pattern is formed on the surface of the structure using the imprint mold.

  The present invention provides an imprint mold, an imprint apparatus, an imprint mold manufacturing method, and a structure manufacturing method that can suppress transfer defects and have a long mold life.

  Hereinafter, embodiments of the present invention will be illustrated with reference to the drawings. In addition, in each drawing, the same code | symbol is attached | subjected to the same component and detailed description is abbreviate | omitted suitably.

FIG. 1 is a schematic diagram for illustrating an imprint type according to the first embodiment. Note that arrows XY in the drawing represent two directions orthogonal to each other.
2 and 3 are schematic process diagrams for illustrating transfer using an imprint mold according to a comparative example.
First, the transfer using the imprint mold according to the comparative example is illustrated.
The imprint mold 100a illustrated in FIG. 2 is a so-called hard mold. The imprint mold 100a, which is a hard mold, is integrally formed using a hard material such as quartz, nickel (Ni), or silicon (Si). An example in which such an imprint mold 100a is used to transfer to the transfer layer 102 formed on the main surface of the substrate 101 with low flatness will be described.

  First, as shown in FIG. 2A, the imprint mold 100 a is disposed so as to face the transfer layer 102. Next, as shown in FIG. 2B, the imprint mold 100 a is mechanically pressed against the transfer layer 102. Here, when transfer is performed using a so-called UV (Ultraviolet) imprint method, the transfer layer 102 is made of an ultraviolet curable resin or the like, and the imprint mold 100 a is mechanically pressed against the transfer layer 102. Transfer is performed by irradiating the transfer layer 102 by irradiating ultraviolet rays in the state. In addition, when transfer is performed using a so-called thermal imprint method, the transferred layer 102 is made of a thermoplastic resin, and the imprint mold 100a is mechanically pressed and pressed while being heated and softened. Transfer is performed by cooling and curing in a heated state.

  At the time of this transfer, since the imprint mold 100a is made of a hard material, depending on the degree of distortion of the substrate 101, the imprint mold 100a may not be able to bend and bend. In such a case, there is a possibility that a transfer defect 102a as shown in FIG.

  The imprint mold 100b illustrated in FIG. 3 is a so-called soft mold. The imprint mold 100b, which is a soft mold, is integrally formed using a soft material such as polydimethylsiloxane (PDMS) or methyl methacrylate resin (Polymethylmethacrylate: PMMA). An example in which such an imprint mold 100b is used to transfer to the transfer layer 102 formed on the main surface of the substrate 101 with low flatness is illustrated.

First, as shown in FIG. 3A, the imprint mold 100 b is disposed to face the transfer layer 102. Next, as shown in FIG. 3B, the imprint mold 100 b is mechanically pressed against the transfer layer 102. Then, transfer is performed using the UV (Ultraviolet) imprint method or the thermal imprint method described above.
At the time of this transfer, since the imprint mold 100b is formed of a soft material, the imprint mold 100b can be bent corresponding to the distortion of the substrate 101. Therefore, as shown in FIG. 3C, transfer without transfer failure can be performed.

  As described above, when transfer is performed on the transfer layer 102 formed on the main surface of a substrate with low flatness (for example, a glass substrate or a compound semiconductor substrate of a liquid crystal display device), in order to reduce transfer defects. It is preferable to use a soft mold. However, since the soft mold is easily deformed, there is a problem that resolution and pattern transfer accuracy are lower than those of the hard mold.

FIG. 4 is an analysis diagram for illustrating an imprint type modification according to the comparative example. 4A shows a hard mold made of quartz, and FIG. 4B shows a soft mold made of polydimethylsiloxane (PDMS). The applied pressure is 0.3 MPa.
As shown to Fig.4 (a), in the case of a hard mold, a shape change is hardly seen. Therefore, the uneven pattern can be transferred with high accuracy and high resolution.
On the other hand, as shown in FIG. 4B, in the case of the soft mold, the shape of the concave portion is changed, and the position of the convex portion is also moved to the left side in the drawing. In addition, the broken line described in the vicinity of the convex portion is the position before the convex portion is deformed. Therefore, the resolution and pattern transfer accuracy are lower than in the case of the hard mold shown in FIG.

  Thus, when high resolution and pattern transfer accuracy are required, it is preferable to use a hard mold. However, in recent years, even when transferring to a transfer layer formed on the main surface of a substrate with low flatness, high resolution and pattern transfer accuracy have been required.

  In this case, as in the technique disclosed in Non-Patent Document 1, an imprint type in which a layer made of a soft material is provided between a soft mold made of a relatively hard material and the base can be used. However, even though it is a relatively hard material, the portion where the concavo-convex pattern is formed is formed of resin, so that the strength is low and the life may be shortened. In addition, the resolution and pattern transfer accuracy may be lower than that of the hard mold.

Next, returning to FIG. 1, the imprint mold 1 according to the present embodiment will be illustrated.
As shown in FIG. 1, the imprint mold 1 is provided with a mold part 2, a buffer part 3, and a base 4. The mold part 2 is provided with a base part 2b having a flat plate shape and an uneven pattern part 2a formed on one main surface of the base part 2b. Further, the buffer portion 3 is provided on the main surface opposite to the main surface on which the uneven pattern portion 2a of the base portion 2b is formed. The mold part 2 (pattern part 2a, base part 2b) is formed of a material having high rigidity and hardness, such as a metal or an inorganic material. Examples of such materials include quartz, nickel (Ni), silicon (Si), and the like. The pattern portion 2a formed of such a material is not easily deformed in the X direction in the figure. Further, the shape change is less likely to occur. Therefore, the formed pattern shape can be transferred with high accuracy and high resolution.

On the other hand, if the base portion 2b of the mold portion 2 and the buffer portion 3 can be bent in the Y direction in the drawing, the pattern portion 2a can be copied to the shape of the main surface of the substrate on which the transfer layer 102 is provided. . By doing so, transfer defects can be reduced even when transfer is performed to the transfer target layer 102 formed on the main surface of the substrate having low flatness.
Here, in order to make the base part 2b bend easily, it is preferable to make the thickness dimension thin. However, if it is too thin, it tends to break. Therefore, the thickness dimension of the base 2b is set within a predetermined range. The thickness dimension of the base 2b will be described later (see FIG. 7).

  The buffer portion 3 is provided on the main surface opposite to the main surface on which the pattern portion 2a of the base portion 2b is formed. That is, the buffer part 3 is provided between the mold part 2 and the base 4 so as to form a film. The buffer 3 is made of a flexible material such as an organic material. Examples of such materials include polydimethylsiloxane (PDMS) and methyl methacrylate resin (Polymethylmethacrylate: PMMA). As described above, it is preferable that the mold part 2 and the buffer part 3 can be bent in the Y direction in the drawing. Therefore, it is preferable to increase the thickness dimension of the buffer portion 3 in order to make the buffer portion 3 easily bent. However, if it is too thick, it tends to deform in the X direction in the figure. Therefore, the thickness dimension of the buffer portion 3 is set within a predetermined range. In addition, regarding the thickness dimension of the buffer part 3, it mentions later (refer FIG. 8).

The base 4 is provided on the main surface opposite to the base 2 b of the buffer 3, and supports the base 2 b and the buffer 3. It is also a portion that is held when the imprint mold 1 is attached to an imprint apparatus (not shown) (see FIG. 12). Therefore, it is formed of a highly rigid material such as a metal or an inorganic material. In this case, the base 4 and the mold part 2 can be formed of the same material. Examples of such materials include quartz, nickel (Ni), silicon (Si), and the like. Further, it is preferable that the base 4 be rigid so that the base 4 is not greatly deformed even if the mold portion 2 and the buffer portion 3 are bent in the Y direction in the figure. Therefore, it is preferable to increase the thickness dimension of the base 4. However, if it is too thick, the weight may increase or the space efficiency may decrease. Therefore, the thickness dimension of the base 4 is set to about 1 mm to 3 mm.
The base 4 is not always necessary, and the buffer 3 may be attached to an imprint apparatus (not shown). For example, the base 4 can be provided in an imprint apparatus (not shown). However, if the base 4 is provided, handling and pressure application as the entire imprint mold 1 can be facilitated.

Next, the structure analysis simulation of the imprint mold 1 will be illustrated.
FIG. 5 is a schematic diagram for illustrating simulation conditions.
FIG. 5A is a schematic diagram for illustrating the overall configuration of the imprint mold 1. In this case, the part to be simulated is the part indicated by A in the figure. That is, the base 2b of the mold part 2 and the state of bending of the film-like buffer part 3 are to be simulated.

  FIG.5 (b) is the figure which expanded the A section of Fig.5 (a). Here, the base 2b and the base 4 are made of quartz, and the buffer 3 is made of polydimethylsiloxane (PDMS). Moreover, the width dimension of the base part 2b and the buffer part 3 was 6 mm, the thickness dimension of the base part 2b was 500 micrometers, and the thickness dimension of the buffer part 3 was 1 mm. The Young's modulus of the base portion 2b was 73 GPa, and the Young's modulus of the buffer portion 3 was 5 MPa. The average applied pressure was 0.3 MPa.

  FIG. 5C and FIG. 5D illustrate the state of the main surface of the substrate that mechanically presses the one shown in FIG. That is, FIG. 5C shows a case where the flatness of the main surface of the substrate is high, and FIG. 5D shows a case where the flatness of the main surface of the substrate is low. The height difference on the main surface of the substrate shown in FIG. 5D is 24 μm.

  FIG. 6 is a diagram for illustrating the result of the simulation. In addition, arrow XY in each figure represents two directions orthogonal to each other. Moreover, the part shown with the broken line in each figure represents the state before a deformation | transformation. FIG. 6A shows the case of pressing against the substrate with high flatness shown in FIG. 5C, and FIG. 6B shows pressing with the substrate with low flatness shown in FIG. 5D. Represents the case. In addition, the displacement amount in the Y direction of the simulation result is easily recognized as 10 times the actual displacement amount.

As shown in FIG. 6A, when pressed against a substrate having a high flatness, the applied pressure at the end B and the end C was set to 0.3 MPa. As a result, the amount of displacement in the Y direction at both end B and end C was 80 μm. This indicates that the buffer portion 3 is evenly compressed and the base portion 2b is evenly pressed against the main surface of the substrate. The amount of displacement in the X direction was almost zero.
As shown in FIG. 6B, when pressing against a substrate with low flatness, the applied pressure at the end D was 0.6 MPa, the applied pressure at the end E was 0 MPa, and the applied pressure was inclined. As a result, the amount of displacement in the Y direction at the end D was 90 μm. Further, the amount of displacement in the Y direction at the end E was 66 μm. The amount of displacement in the X direction was almost zero. This indicates that the base portion 2b and the buffer portion 3 are pressed so as to follow the main surface of the substrate.

FIG. 7 is a graph for illustrating the relationship between the thickness dimension of the base and the amount of displacement in the Y direction. The buffer 3 is made of polydimethylsiloxane (PDMS) and has a thickness of 1 mm. The base 2b is made of quartz.
As shown in FIG. 7, the amount of displacement in the Y direction can be increased as the thickness of the base 2b is reduced. Therefore, the tolerance to the distortion of the substrate can be improved as the thickness dimension of the base portion 2b is reduced. However, if the thickness dimension of the base portion 2b is too thin, the base portion 2b is easily damaged. On the other hand, if the thickness dimension of the base portion 2b is too thick, the amount of displacement in the Y direction becomes too small, and the tolerance for distortion of the substrate may be reduced.
In this case, in consideration of the strength of the base 2b and the amount of distortion of the substrate, the thickness of the base 2b is preferably set to 300 μm or more and 500 μm or less. In such a case, a practically preferable result can be obtained.

FIG. 8 is a graph for illustrating the relationship between the thickness dimension of the buffer portion and the amount of displacement in the Y direction. The base 2b is made of quartz, and the thickness dimension is 300 μm. The buffer part 3 is made of polydimethylsiloxane (PDMS).
As shown in FIG. 8, the amount of displacement in the Y direction can be increased as the thickness of the buffer portion 3 is increased. Therefore, the tolerance with respect to the distortion | strain of a board | substrate can be improved, so that the thickness dimension of the buffer part 3 is thickened. However, if the thickness of the buffer part 3 is too thick, the flatness may be lowered. That is, in general, it is difficult to form a film having a large thickness dimension and high flatness. For this reason, if the thickness of the buffer portion 3 is too thick, the flatness may be lowered. On the other hand, if the thickness dimension of the buffer part 3 is too thin, the amount of displacement in the Y direction becomes too small, and the tolerance for distortion of the substrate may be reduced.
In this case, it is preferable that the thickness dimension of the buffer part 3 is 0.6 mm or more and 3 mm or less in consideration of the deformation amount of the buffer part 3 in the X direction and the distortion amount of the substrate. In such a case, a practically preferable result can be obtained.

FIG. 9 is a schematic diagram for illustrating an imprint type according to the second embodiment. Note that arrows XY in the drawing represent two directions orthogonal to each other.
As shown in FIG. 9, the imprint mold 10 is provided with a mold part 2, a buffer part 13, and a base 4. Further, the mold part 2 is provided with a base part 2b having a flat plate shape and an uneven pattern part 2a formed on one main surface of the base part 2b. Further, a buffer portion 13 is provided on the main surface opposite to the main surface on which the uneven pattern portion 2a of the base portion 2b is formed.

  The buffer part 13 is provided in the main surface on the opposite side to the main surface in which the pattern part 2a of the base 2b was formed. That is, the buffer part 13 is provided between the mold part 2 and the base 4. The buffer portion 13 is formed of a flexible material such as an organic material. Examples of such materials include polydimethylsiloxane (PDMS) and methyl methacrylate resin (Polymethylmethacrylate: PMMA).

  In the present embodiment, a plurality of buffer portions 13 having a columnar shape are provided. And it is made easier to bend in the Y direction in a figure by providing a space between buffer parts 13 mutually. In this case, the ease of bending in the Y direction can be appropriately changed by changing the number and thickness of the buffer portions 13. In addition, although there is no limitation in particular in the cross-sectional shape of the buffer part 13, it is preferable to make it symmetrical so that a bending direction may not shift. In this case, for example, the cross-sectional shape of the buffer portion 13 can be circular.

FIG. 10 is a diagram for illustrating an imprint type structural analysis simulation according to the second embodiment.
FIG. 10A is a schematic diagram for illustrating a portion subjected to simulation as illustrated in FIG. 5B.
Here, the base 2b and the base 4 are made of quartz, and the buffer part 13 is made of polydimethylsiloxane (PDMS). The width of the base 2b was 6 mm, the thickness of the base 2b was 500 μm, and the thickness of the buffer 13 was 1 mm. In addition, the number of buffer portions 13 provided was 3, the cross-sectional shape was circular, the diameter dimension was 1 mm, and the installation pitch was 2 mm. The Young's modulus of the base portion 2b was 73 GPa, and the Young's modulus of the buffer portion 13 was 5 MPa. The average applied pressure was 0.3 MPa.

  FIG. 10B is a diagram for illustrating the result of the simulation. Note that arrows XY in the drawing represent two directions orthogonal to each other. In addition, the simulation is performed when pressed against a substrate having low flatness. Moreover, the part shown with the broken line in a figure represents the state before a deformation | transformation. In addition, the displacement amount in the Y direction of the simulation result is easily recognized as five times the actual displacement amount.

  As shown in FIG. 10B, when pressing against a substrate with low flatness, the applied pressure at the end F was 0.6 MPa, the applied pressure at the end G was 0 MPa, and the applied pressure was inclined. As a result, the amount of displacement in the Y direction at the end F was 199 μm. Further, the amount of displacement in the Y direction at the end G was 172 μm. The amount of displacement in the X direction was almost zero.

  If the columnar buffer portion 13 is provided in this manner, the amount of displacement in the Y direction can be increased as compared with the film-shaped buffer portion 3 illustrated in FIG. This means that the tolerance for distortion of the substrate can be increased.

FIG. 11 is a graph for illustrating the relationship between the configuration of the buffer portion and the amount of displacement in the Y direction. In addition, H in the figure is the case of the film-shaped buffer part 3 illustrated in FIG. 5, and I in the figure is the case of the columnar buffer part 13 illustrated in FIG.
As shown in FIG. 11, when the thickness dimension of the base part 2b is 500 micrometers or less, it turns out that the influence by the difference in the form of a buffer part becomes large. And if the form of the buffer part 13 is made columnar as shown by I in the figure, the amount of displacement in the Y direction can be increased compared to the film-like buffer part 3 shown in H in the figure.

  As illustrated above, according to the imprint type according to the present embodiment, the transferred layer formed on the main surface of a substrate with low flatness (for example, a glass substrate or a compound semiconductor substrate of a liquid crystal display device). Even when transfer is performed, the base part of the mold part and the buffer part can be bent. Therefore, the pattern portion can follow the shape of the main surface of the substrate on which the transfer layer is provided by bending the base portion and the buffer portion. As a result, transfer defects can be reduced. In addition, since it is possible to cope with the distortion of the substrate, a large area can be transferred at once. Further, since the mold part is formed of a material having high rigidity and hardness, it is possible to improve the resolution and pattern transfer accuracy, extend the mold life, reduce the maintenance time, improve the productivity, and the like.

Next, the imprint apparatus according to the present embodiment is illustrated.
FIG. 12 is a schematic diagram for illustrating the imprint apparatus according to the present embodiment.
As shown in FIG. 12, the imprint apparatus 50 is provided with an imprint mold according to the present embodiment, a holding means 51, a pressing means 52, and a mounting table 53.
The holding means 51 has a function of holding the imprint mold according to the present embodiment (the imprint mold 1 illustrated in FIG. 12). Examples of the imprint type holding include holding the base 4 mechanically.

  The pressing unit 52 has a function of moving the holding unit 51 up and down. The imprint mold held by the holding means 51 can be mechanically pressed against the transferred layer 102 formed on the main surface of the substrate 103. Examples of the pressing means 52 include those using pneumatic pressure or hydraulic pressure as a power source. However, the driving method of the pressing means 52 is not limited to the illustrated one, and can be changed as appropriate.

  The mounting table 53 is provided to face the holding unit 51 and mounts and holds the substrate 103 on which the transfer layer 102 is provided. Further, it also has a function of moving the held substrate 103 in a horizontal plane. As the mounting table 53, for example, an XY table can be exemplified. Examples of the holding means (not shown) provided on the mounting table 53 include a mechanical holding device, a vacuum chuck, and an electrostatic chuck. However, the movement method and the holding method are not limited to those illustrated, and can be changed as appropriate.

Next, the operation of the imprint apparatus 50 will be illustrated.
The substrate 103 on which the transfer layer 102 is formed is carried in by a transport device (not shown), and is placed on the upper surface of the mounting table 53. The mounted substrate 103 is held by a holding means (not shown) provided on the mounting table 53 and is moved to a predetermined position by the mounting table 53. Further, the holding means 51 facing the mounting table 53 holds the imprint mold according to the present embodiment. The holding means 51 is lowered by the pressing means 52 so that the imprint pattern portion 2 a is transferred to the transfer layer 102. Press it mechanically.

  Here, when transfer is performed using a so-called UV (Ultraviolet) imprint method, ultraviolet rays are irradiated in a state where the imprint pattern portion 2 a is mechanically pressed against the transfer layer 102 to transfer the transfer layer 102. Is transferred by curing. In this case, the imprint mold is formed of a transparent material so that ultraviolet rays can be transmitted. Further, the transfer layer 102 is made of an ultraviolet curable resin or the like so as to be cured by irradiation with ultraviolet rays.

  In addition, when transfer is performed using a so-called thermal imprint method, the transferred layer 102 is made of a thermoplastic resin, and the imprint pattern portion 2a is mechanically moved in a state where the layer is heated and softened. Transfer is performed by pressing and cooling and curing in the pressed state.

  When the transfer to the transfer target layer 102 is completed, the holding means 51 is raised by the pressing means 52, and the substrate 103 on which the transfer is completed is carried out by a transport device (not shown). The imprint mold transfer can be continued by moving the position of the substrate 103 by the mounting table 53.

  According to the present embodiment, due to the imprinting function according to the present embodiment held by the holding means 51, transfer defects can be reduced even when the flatness of the substrate 103 is low. Further, since the mold part 2 is formed of a material having high rigidity and hardness, it is possible to improve resolution and pattern transfer accuracy, extend the mold life, reduce maintenance time, improve productivity, and the like.

Next, an imprint type manufacturing method according to the present embodiment will be illustrated.
FIG. 13 is a schematic process diagram for illustrating the imprint mold manufacturing method according to the present embodiment.
First, as shown in FIG. 13A, a pattern portion 2a is formed on one main surface of a flat plate member 20 containing a metal or an inorganic material by using an electron beam lithography method or machining.

Next, as shown in FIG. 13B, after the protective resin 21 is applied to the pattern portion 2a, the other main surface of the flat plate member 20 (the side opposite to the main surface on which the pattern portion 2a is formed). The base portion 2b having a predetermined thickness dimension is formed by processing the main surface.
13A and 13B, the base portion 2b having a predetermined thickness dimension is formed after the pattern portion 2a is formed. However, the flat plate member 20 containing a metal or an inorganic material has a predetermined thickness. You may make it process to a dimension, affix it on a jig | tool, and form the pattern part 2a in one main surface of the flat member 20, and form the base 2b, and you may make it remove this from a jig | tool.

On the other hand, as shown in FIG.13 (c), the base 4 is formed by processing the flat member containing a metal or an inorganic material.
Next, as shown in FIG. 13 (d), the buffer portion 3 is formed by applying a liquid organic material to one main surface of the base 4 and curing it. Examples of the organic material include polydimethylsiloxane (PDMS) and methyl methacrylate resin (PMMA). Examples of the curing method include heating. For example, in the case of polydimethylsiloxane (PDMS), the heating temperature can be about 70 ° C. to 120 ° C. In the case of a two-component mixed curing type polydimethylsiloxane (Polydimethylsiloxane: PDMS), it can be cured by mixing at a predetermined ratio.

  In the case where the columnar buffer portion 13 is used, a resin may be applied in a columnar shape using a mask (not shown) and then cured. Moreover, you may make it form the columnar buffer part 13 by removing a part of buffer part 3 formed in the film | membrane form.

Next, as shown in FIG.13 (e), the buffer part 3 (buffer part 13) and the base 2b are joined. An adhesive can be used for joining. In this case, when the imprint mold is used for a so-called UV (Ultraviolet) imprint method, the adhesive used for bonding is transparent.
Note that the surface energy is increased by roughening the main surface of the buffer portion 3 (buffer portion 13) by a dry etching process or the like without using an adhesive, and the buffer portion 3 (buffer portion 13) and the base portion are utilized by utilizing this surface energy. 2b may be joined.

  When the imprint mold is used for the so-called UV (Ultraviolet) imprint method, the mold part 2, the base 4, and the buffer parts 3 and 13 are formed of a transparent material. For example, the mold part 2 and the base 4 are made of quartz or the like, and the buffer parts 3 and 13 are made of polydimethylsiloxane (PDMS) or the like.

  Further, when the imprint mold is used for the so-called thermal imprint method, it is not necessary to use a transparent material for forming the mold portion 2, the base 4, and the buffer portions 3 and 13. For example, the mold part 2 and the base 4 can be formed of nickel (Ni), silicon (Si), or the like. In addition, even if it is a case where it uses for a thermal imprint method, the type | mold part 2, the base 4, and the buffer parts 3 and 13 can also be formed with a transparent material.

Next, a method for manufacturing the structure according to this embodiment is illustrated.
In the structure manufacturing method according to the present embodiment, an uneven pattern is formed on the surface of the structure using the imprint mold and the imprint apparatus according to the present embodiment.
Examples of the structure having an uneven pattern include an electronic device such as a semiconductor device and a light emitting diode, and a magnetic recording medium such as a discrete track pattern medium.

  For example, in a semiconductor device manufacturing method, a pattern is formed on a wafer surface by film formation, resist application, exposure, development, etching, resist removal, etc., and the imprint type and imprint apparatus according to this embodiment are used. By forming a resist pattern and performing etching and resist removal, the pattern can be formed on the wafer surface. In addition, since a known technique can be applied except for the imprint type and the imprint apparatus according to the present embodiment described above, description thereof will be omitted.

  As an example, an electronic device such as a semiconductor device or a light-emitting diode, a magnetic recording medium such as a discrete track pattern medium, and the like are illustrated, but the invention is not limited thereto. The present invention can be widely applied to the manufacture of structures having a concavo-convex pattern on the surface.

  According to this embodiment, transfer with excellent resolution and pattern transfer accuracy can be performed, so that the function of the structure can be improved. In addition, since transfer defects can be reduced, product yield and productivity can be improved.

Heretofore, the present embodiment has been illustrated. However, the present invention is not limited to these descriptions.
As long as the features of the present invention are provided, those skilled in the art appropriately modified the design of the above-described embodiments are also included in the scope of the present invention.
For example, the shape, size, material, arrangement, number, and the like of each element included in the above-described imprint mold, imprint apparatus, and the like are not limited to those illustrated, and can be changed as appropriate.
Moreover, each element with which each embodiment mentioned above is combined can be combined as much as possible, and what combined these is also included in the scope of the present invention as long as the characteristics of the present invention are included.

It is a mimetic diagram for illustrating the imprint type concerning a 1st embodiment. It is a schematic process diagram for illustrating transfer using an imprint mold according to a comparative example. It is a schematic process diagram for illustrating transfer using an imprint mold according to a comparative example. It is an analysis figure for illustrating modification of an imprint type concerning a comparative example. It is a schematic diagram for illustrating the conditions of simulation. It is a figure for illustrating the result of simulation. It is a graph for demonstrating the relationship between the thickness dimension of a base, and the displacement amount of a Y direction. It is a graph for demonstrating the relationship between the thickness dimension of a buffer part, and the displacement amount of a Y direction. It is a schematic diagram for illustrating the imprint type | mold which concerns on 2nd Embodiment. It is a figure for demonstrating about the imprint type | mold structural analysis simulation which concerns on 2nd Embodiment. It is a graph for demonstrating the relationship between the form of a buffer part, and the displacement amount of a Y direction. It is a schematic diagram for demonstrating about the imprint apparatus which concerns on this Embodiment. It is a schematic process diagram for illustrating the imprint type manufacturing method according to the present embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Imprint type | mold, 2 type | mold part, 2a pattern part, 2b base part, 3 buffer part, 4 bases, 10 imprint type | mold, 13 buffer part, 50 imprint apparatus, 51 holding means, 52 pressing means, 53 mounting base, 102 transferred layer, 103 substrate

Claims (8)

A base including at least one of a metal and an inorganic material;
A pattern portion provided on the first main surface of the base portion and including at least one of a metal and an inorganic material;
A buffer portion provided on a second main surface opposite to the first main surface of the base portion and containing an organic material;
With
An imprint mold characterized in that the pattern portion follows the shape of the main surface of the substrate on which the transfer layer is provided by bending the base portion and the buffer portion.   The imprint mold according to claim 1, wherein the buffer portion has a film shape.   The imprint mold according to claim 1, wherein the buffer section has a columnar shape, and a plurality of the buffer sections are provided.   The imprint mold according to any one of claims 1 to 3, further comprising a base that is provided on the opposite side of the buffer portion from the base and supports the buffer portion. The imprint mold according to any one of claims 1 to 4,
Holding means for holding the imprint mold;
Pressing means for raising and lowering the holding means;
A mounting table on which the substrate provided with a transfer layer is provided, facing the holding unit;
An imprint apparatus comprising: Forming a pattern portion on the first main surface of the first flat plate-like member containing a metal or an inorganic material;
Processing the second main surface opposite to the first main surface of the first flat plate member to form a base portion having a predetermined thickness dimension;
Processing a second flat plate-like member containing a metal or an inorganic material to form a base;
Forming a buffer part containing an organic material on the main surface of the base,
Joining the buffer portion and the base portion;
An imprint type manufacturing method characterized by the above. Processing the first flat plate-like member containing a metal or an inorganic material into a predetermined thickness;
Forming a pattern portion on the first main surface of the first flat plate member processed into the predetermined thickness and forming a base portion;
Processing a second flat plate-like member containing a metal or an inorganic material to form a base;
Forming a buffer part containing an organic material on the main surface of the base,
Joining the buffer portion and the base portion;
An imprint type manufacturing method characterized by the above.   A method for producing a structure, comprising using the imprint mold according to claim 1 to form a concavo-convex pattern on the surface of the structure.

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