JP2010028140A - Method of manufacturing nitride-based compound semiconductor light-emitting element - Google Patents

Method of manufacturing nitride-based compound semiconductor light-emitting element Download PDF

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JP2010028140A
JP2010028140A JP2009251860A JP2009251860A JP2010028140A JP 2010028140 A JP2010028140 A JP 2010028140A JP 2009251860 A JP2009251860 A JP 2009251860A JP 2009251860 A JP2009251860 A JP 2009251860A JP 2010028140 A JP2010028140 A JP 2010028140A
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nitride
compound semiconductor
layer
based compound
semiconductor light
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JP4570683B2 (en
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Toshio Hata
俊雄 幡
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Sharp Corp
シャープ株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride-based compound semiconductor light-emitting element having excellent characteristics and high reliability without causing separation or the like in dividing a chip nor causing a short circuit in a semiconductor layer, in a manufacturing process of a nitride-based compound semiconductor light-emitting element. <P>SOLUTION: This method of manufacturing a nitride-based compound semiconductor light-emitting element includes processes of: forming a nitride-based compound semiconductor layer on a substrate for crystal growth; forming a second ohmic electrode and a second adhering metal layer on the nitride-based semiconductor layer in this order; forming a first ohmic electrode and a first adhering metal layer on a conductive substrate in this order; jointing the second adhering metal layer to the first adhering metal layer; removing the substrate for crystal growth; and exposing a surface of the second ohmic electrode by forming a first groove extending to the second ohmic electrode on the nitride-based compound semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a nitride-based compound semiconductor light-emitting device (laser and light-emitting diode) capable of emitting light from a green region to an ultraviolet region, and in particular, a nitride-based material in which a part of an ohmic electrode or a P-type semiconductor layer is exposed. The present invention relates to a method for manufacturing a compound semiconductor light emitting device.

  In the following Patent Document 1, as shown in FIG. 13, a first ohmic electrode 102 and a second ohmic electrode 101 are formed on a conductive substrate 100 on which a positive electrode 107 is formed, and a gallium nitride-based material is formed thereon. A nitride-based compound semiconductor light emitting device in which a semiconductor P-type layer 103, a light-emitting layer 104, an N-type layer 105, and a negative electrode 106 are sequentially stacked, and the first ohmic electrode 102 and the second ohmic electrode 101 are thermocompression bonded. An element is disclosed.

  In the nitride-based compound semiconductor light-emitting device described in Patent Document 1 below, the P-type layer 103, the light-emitting layer 104, and the N-type layer 105 of the gallium nitride-based semiconductor are inscribed or divided at a time. For this reason, there is a problem that a short circuit occurs on the side surfaces of the P-type layer 103, the light-emitting layer 104, and the N-type layer 105. As a result, there is a problem that the reliability of the nitride-based compound semiconductor light-emitting element is deteriorated.

  In addition, there is a problem that peeling occurs between the first ohmic electrode 102 and the second ohmic electrode 101 in the cutting division when the wafer is divided into chips. This reduces the process yield.

  Furthermore, in the case of partial peeling, the solvent, resist, etching solution, etc. soaked during the process. For example, in the case of a lamp light emitting element, the resin, moisture, etc. penetrated from the part where the peeling has occurred, In some cases, the bonding electrode was destroyed. Therefore, there is a problem that the reliability of the nitride-based compound semiconductor light-emitting element is deteriorated.

Japanese Patent Laid-Open No. 9-8403

  The present invention has been made in order to solve the above-described problems of the prior art, and the object thereof is to prevent peeling or the like when the chip is divided in the manufacturing process of a nitride-based compound semiconductor light-emitting element. It is an object of the present invention to provide a method for manufacturing a nitride-based compound semiconductor light-emitting element that does not cause a short circuit in a semiconductor layer and has good characteristics and high reliability.

  According to one aspect of the present invention, there is provided a method for manufacturing a nitride compound semiconductor light emitting device, the step of forming a nitride compound semiconductor layer on a substrate for crystal growth, and the nitride semiconductor layer. A step of forming a second ohmic electrode and a second bonding metal layer in this order; and a step of forming the first ohmic electrode and the first bonding metal layer in this order on the conductive substrate. A step of bonding the second bonding metal layer and the first bonding metal layer, a step of removing the substrate for crystal growth, and the second step of adding the second compound metal layer to the nitride compound semiconductor layer. Forming a first groove extending to the ohmic electrode to expose the surface of the second ohmic electrode, and providing a method for manufacturing a nitride-based compound semiconductor light emitting device.

  Preferably, the nitride compound semiconductor layer includes at least a P-type layer, a light emitting layer, and an N-type layer.

  According to another aspect of the present invention, there is provided a method for manufacturing a nitride-based compound semiconductor light-emitting device, the nitride-based compound semiconductor comprising at least a P-type layer, a light-emitting layer, and an N-type layer on a crystal growth substrate. A step of forming a layer, a step of forming a second ohmic electrode and a second bonding metal layer in this order on the nitride-based semiconductor layer, a first ohmic electrode on the conductive substrate, and A step of forming a first bonding metal layer in this order, a step of bonding the second bonding metal layer and the first bonding metal layer, and a step of removing the substrate for crystal growth; Forming a first groove extending partway through the P-type layer in the nitride-based compound semiconductor layer, thereby exposing the surface of the P-type layer. A method for manufacturing a semiconductor light emitting device is provided.

  Preferably, the conductive substrate is a semiconductor made of at least one selected from the group consisting of Si, GaAs, GaP, Ge, and InP.

  Preferably, the substrate for crystal growth is an insulating substrate of sapphire, spinel or lithium niobate, or a conductive substrate of silicon carbide, silicon, zinc oxide or gallium arsenide.

  Preferably, the area of the surface perpendicular to the layer thickness direction of the first bonding metal layer is larger than the area of the surface perpendicular to the layer thickness direction of the light emitting layer.

Preferably, the first groove is exposed using etching.
Preferably, the width of the first groove is not less than 1 μm and not more than 100 μm.

  Preferably, a second groove is formed from the bottom surface of the first groove, and a nitride-based compound semiconductor light emitting device is manufactured by dividing the second groove.

  Preferably, the second groove is formed from the bottom surface of the first groove to the middle of the conductive substrate.

Preferably, the width of the second groove is 1 μm or more and 50 μm or less.
Preferably, a marking line is introduced from the back surface of the conductive substrate so as to face the second groove formed partway through the conductive substrate.

  Preferably, the nitride-based compound semiconductor light-emitting element is manufactured by dividing along a second groove formed partway through the conductive substrate and a marking line introduced from the back surface of the conductive substrate.

  According to the present invention, the semiconductor layer has a structure in which the vicinity of the PN junction is not injured or divided, that is, the nitride-based compound semiconductor layer is completely removed or partially removed from the P-type layer when forming the groove. As a result, the short circuit between the P layer and the N layer that occurs during the chipping process can be eliminated, and the leakage current can be reduced, thereby providing a nitride-based compound semiconductor light-emitting device with good reliability.

  In addition, when forming a groove from one exposed surface, the metal layer for adhesion is not peeled off, peeling, etc., and chip division is facilitated, so that the production yield of light-emitting elements is improved, and an inexpensive nitride-based compound semiconductor A light emitting element can be provided.

It is a schematic sectional drawing of the nitride type compound semiconductor light-emitting device obtained by the manufacturing method of this invention. It is a schematic sectional drawing which shows the process of forming a semiconductor layer on a support substrate in the manufacturing process of the nitride type compound semiconductor light-emitting device of this invention. In the manufacturing process of the nitride type compound semiconductor light emitting element of this invention, it is a schematic sectional drawing which shows the process of forming an ohmic electrode and an adhesion metal layer on a semiconductor layer. It is a schematic sectional drawing which shows the process of forming an ohmic electrode and the metal layer for adhesion | attachment on a conductive substrate in the manufacturing process of the nitride type compound semiconductor light-emitting device of this invention. FIG. 5 is a schematic cross-sectional view showing a process for joining the structure of FIG. 3 and the structure of FIG. 4 in the manufacturing process of the nitride-based compound semiconductor light-emitting device of the present invention. It is a schematic sectional drawing which shows the process of removing a support substrate in the manufacturing process of the nitride type compound semiconductor light-emitting device of this invention. In the manufacturing process of the nitride type compound semiconductor light emitting element of this invention, it is a schematic sectional drawing which shows the process of exposing one surface of an ohmic electrode by an etching. It is a schematic sectional drawing which shows the process of forming a transparent electrode and a pad electrode on an N type layer in the manufacturing process of the nitride type compound semiconductor light-emitting device of this invention. It is a schematic sectional drawing which shows the process of forming a groove | channel from one exposed surface in the manufacturing process of the nitride type compound semiconductor light-emitting device of this invention. In the manufacturing process of the nitride type compound semiconductor light emitting element of this invention, it is a schematic sectional drawing which shows the process of introducing a marking line into the groove | channel formed from one exposed surface. FIG. 8 is a schematic cross-sectional view showing an alternative form of FIG. 7. It is a schematic sectional drawing which shows another form of the nitride type compound semiconductor light-emitting device obtained by the manufacturing method of this invention. It is a schematic sectional drawing of the conventional nitride type compound semiconductor light emitting element.

  According to the manufacturing method of the present invention, a first ohmic electrode, a first bonding metal layer, a second bonding metal layer, and a second ohmic electrode are provided in this order on the conductive substrate, A nitride compound semiconductor light emitting device comprising a nitride compound semiconductor layer on an ohmic electrode, wherein one surface of the second ohmic electrode is exposed. Obtainable.

  According to the manufacturing method of the present invention, a leak current can be reduced, and a highly reliable nitride-based compound semiconductor light-emitting element can be obtained. Hereinafter, the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a schematic cross-sectional view of a nitride-based compound semiconductor light-emitting device obtained by the manufacturing method of the present invention. 1 includes at least a first ohmic electrode 2, a first bonding metal layer 21, a second bonding metal layer 31, and a second ohmic electrode on a conductive substrate 1. 3, the nitride compound semiconductor layer 60 is formed on the second ohmic electrode 3. On the nitride-based compound semiconductor layer 60, a transparent electrode 7, a pad electrode 8, and a bonding wire 9 necessary for functioning as a light emitting element are formed.

  In the present invention, the nitride-based compound semiconductor layer includes a P-type layer 4, a light emitting layer 5, and an N-type layer 6 in this order, as shown in FIG. Light emission having desired characteristics can be achieved by adjusting the composition, layer thickness, physical properties, and the like of such a semiconductor layer.

  In the present invention, the conductive substrate is not particularly limited as long as it has a good thermal conductivity, can easily form a cleavage plane, and can easily obtain P-type or N-type conductivity. It is preferable to use a semiconductor made of at least one selected from the group consisting of Si, GaAs, GaP, Ge, and InP. In particular, in the present invention, it is preferable to use a Si substrate from the viewpoint of low cost.

  In the present invention, examples of the material used for the first ohmic electrode include Ti / Al, Ti, Al, Hf, Hf / Al, and the like. In particular, Ti / Al is a light emitting element having a low operating voltage. It is preferable from the viewpoint that it can be manufactured. Examples of the material used for the second ohmic electrode include Pd, Ni, Pd / Au, Ni / Au, and Ag. In particular, from the viewpoint that a light-emitting element with a low operating voltage can be manufactured. Is preferably used.

  In the present invention, Au, AuSn, Sn, In, In-Pd, Ag paste, etc. can be used as materials used for the first adhesive metal layer and the second adhesive metal layer, However, it is not limited to these.

Further, in the present invention, the nitride-based compound semiconductor layer, In x Al y Ga 1- xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1), P, nitride compound semiconductor containing As and B, etc. Can be used.

  Next, the manufacturing method of the nitride type compound semiconductor light emitting element of this invention is demonstrated using figures. In addition, the dimension of each layer illustrated in the following manufacturing methods is an example, Comprising: It can adjust suitably according to the characteristic of the light emitting element desired.

  First, as shown in FIG. 2, a buffer layer 11 made of a GaN material, an N-type nitride compound semiconductor layer 6, a light emitting layer 5 made of an MQW structure, and a P-type nitride compound semiconductor layer 4 on a support substrate 10. Grow sequentially. For the growth, MOCVD (metal organic chemical vapor deposition) can be used.

  In the present invention, as the support substrate, an insulating substrate of sapphire, spinel, or lithium niobate, or a conductive substrate of silicon carbide, silicon, zinc oxide, or gallium arsenide can be used.

  As an example of the dimensions of each layer, the thickness of the support substrate 10 can be 430 μm, the GaN buffer layer 11 can be 20 nm, and the N-type nitride compound semiconductor layer 6 can be The MQW light emitting layer 5 can be set to 50 nm, and the P-type nitride compound semiconductor layer 4 can be set to 200 nm, but is not limited thereto.

  Next, as shown in FIG. 3, the second ohmic electrode 3, the reflective metal layer 32, and the second bonding metal 31 are formed on the P-type nitride compound semiconductor layer 4 by vapor deposition. For the vapor deposition, an electron beam vapor deposition method (EB method) can be used, and as a condition, the second ohmic electrode is performed at 0.4 mm / sec using an EB method with good film thickness controllability. The reflective metal layer 32 and the second bonding metal layer 31 are preferably formed using a resistance heating vapor deposition method.

  The second ohmic electrode 3 can be formed with a thickness of 3 nm using a Pd material. The reflective metal layer 32 can be formed with a thickness of 150 nm using an Ag material. The second bonding metal layer 31 may be formed by using an AuSn material and a thickness of 3 μm and an Au material and a thickness of 100 nm formed in this order. In addition, it is preferable to form between the reflective metal layer 32 and the second adhesive metal layer 31 with a thickness of 100 nm using a Mo material as a barrier layer (not shown). Here, Sn in AuSn is preferably 20% by mass. Note that Au in the second bonding metal layer functions as an antioxidant film for the AuSn layer.

  Next, as shown in FIG. 4, the first ohmic electrode 2 and the first bonding metal layer 21 are formed in this order on the conductive substrate 1. The EB method can be used for the formation, and as conditions, the first ohmic electrode 2 is formed using the EB method, and the first bonding metal layer 21 is formed using the resistance heating vapor deposition method. It is preferable to do. As the conductive substrate, a Si material can be used, and the thickness can be 350 μm. Moreover, Ti / Al can be used for the material of the 1st ohmic electrode 2, and thickness can be 15 nm / 150 nm, respectively. Further, an Au material can be formed with a thickness of 3 μm on the first bonding metal layer 21. Note that a Mo material having a thickness of 100 nm can be formed as a barrier layer (not shown) between the first ohmic electrode 2 and the first bonding metal layer 21.

Next, as shown in FIG. 5, the second bonding metal layer 31 and the first bonding metal layer 21 are joined to the structure shown in FIG. 3 and the structure shown in FIG. 4. To be joined. Specifically, the Au layer as the first bonding metal layer 21 and the Au layer on the AuSn layer as the second bonding metal layer 31 are opposed to each other, and the temperature is 290 ° C. using a eutectic bonding method. And pasting at a pressure of 300 N / cm 2 .

  Next, as shown in FIG. 6, the support substrate 10 is removed. Specifically, a YAG-THG laser (wavelength 355 nm) is irradiated from the side of the support substrate 10 that has been mirror-polished, and the buffer layer 11 made of GaN material and the N-type layer 6 made of N-type GaN material at the interface with the support substrate 10. The support substrate 10 is removed by thermally decomposing a part. In FIG. 6, the broken lines in the drawing show the removed support substrate 10, buffer layer 11, and part of the N-type layer 6.

  Next, as shown in FIG. 7, a resist 12 is formed on the N-type layer 6 and completely removed from the N-type layer 6 side to the P-type layer 4 using reactive ion etching (RIE). A groove is formed by exposing one main surface 50 of the second ohmic electrode 3. Here, the width X of the groove exposed by RIE is preferably 1 μm or more and 100 μm or less. If it is less than 1 μm, it is difficult to form a groove for chip formation on the surface of the exposed groove, so there is a possibility that the chip cannot be divided. If it exceeds 100 μm, the width of the groove is too wide. The chip removal rate from a single wafer is reduced. More preferably, they are 10 micrometers or more and 30 micrometers or less. In the first embodiment, the thickness is 50 μm.

Then, as shown in FIG. 8, the resist 12 is removed, ITO on the N-type layer 6 in which the support substrate 10 is made of GaN material that is exposed is removed (Sn-doped In 2 O 3) transparent conductor electrode 7 made of Is formed on almost the entire surface, and an N-type bonding pad electrode (Au / Ti) is formed as a bonding pad electrode 8 at the center thereof.

  Next, as shown in FIG. 9, a YAG-THG laser (wavelength 355 nm) is irradiated in the direction of the arrow to form the groove 13 from one main surface 50 of the second ohmic electrode 3 to the middle of the conductive substrate 1. Form. Next, as shown in FIG. 10, a marking line 14 is inserted from the back side of the conductive substrate so as to face the groove 13 using an infrared transmission scribe device. By dividing along the marking line 14, the chip forming process can be completed. Further, a bonding wire 9 made of an Au material is ball-bonded on the bonding pad 8. Thereby, the nitride-based compound semiconductor light emitting device as shown in FIG. 1 can be manufactured.

  As described above, according to the method for manufacturing a nitride-based compound semiconductor light-emitting device of the present invention, a nitride-based compound is formed in a region where a groove for splitting or splitting is formed so that the vicinity of the PN junction is not cut or split. By completely removing the semiconductor layer or removing part of the P-type layer, there is no short circuit between the P layer and the N layer that occurs during the chipping process, and leakage current can be reduced, resulting in high reliability. A nitride-based compound semiconductor light emitting device can be realized.

  In addition, the exposed ohmic electrode layer is formed with a laser using a groove, and further, a marking line is formed from the conductive substrate side so as to face the groove. This eliminates the problem of chip division and improves the chip removal rate. The marking line 14 from the back side of the conductive substrate can be further easily formed into a chip by removing Si by etching from the back side of the conductive substrate and inserting the marking line there.

(Embodiment 2)
In the method for manufacturing a nitride-based compound semiconductor light emitting device of the present invention, the case where a material different from that of the first embodiment is used as the material of each layer will be described below.

  In the method for manufacturing the nitride-based compound semiconductor light-emitting element of the present invention described in Embodiment 1, the reflective metal layer 32 shown in FIG. 3 can also be formed with a thickness of 150 nm using an Ag—Nd material. The second bonding metal layer 31 may be formed by using an AuSn material and a thickness of 3 μm, and an Au material and a thickness of 10 nm formed in this order. The barrier layer formed between the reflective metal layer 32 and the second bonding metal layer 31 may be made of Mo material and have a thickness of 200 nm.

  In the method for manufacturing the nitride-based compound semiconductor light-emitting device of the present invention described in Embodiment 1, the first bonding metal layer 21 shown in FIG. 4 can also be made 3 μm thick using an Au material. As the barrier layer formed between the first ohmic electrode 2 and the first bonding metal layer 21, a Mo material can be used to have a thickness of 200 nm.

In the case of using another material in this way, the eutectic bonding method conditions for bonding the structure of FIG. 3 and the structure of FIG. 4 are a temperature of 270 ° C. and a pressure of 400 N / cm 2 . It is preferable.

  Further, another embodiment in which a resist is provided on the N-type layer 6 as shown in FIG. 7 in the first embodiment to expose the surface will be described with reference to FIG.

  FIG. 11 is a schematic cross-sectional view showing steps corresponding to the process of FIG. 7 in the first embodiment. In FIG. 11, until the resist 12 is formed, it is the same as that of the first embodiment except that the material and thickness of each layer described above are changed.

  In FIG. 11, after forming the resist 12, etching is performed from the N-type layer 6 side to the middle of the P-type layer 4 by the RIE method using the resist 12 as a mask to expose a partial surface 51 of the P-type layer. . Here, the width Y of the groove exposed by RIE is preferably 1 μm or more and 100 μm or less. If it is less than 1 μm, it is difficult to form a groove for chip formation on the surface of the exposed groove, so there is a possibility that the chip cannot be divided. If it exceeds 100 μm, the width of the groove is too wide. The chip removal rate from a single wafer is reduced. More preferably, they are 10 micrometers or more and 50 micrometers or less. In the second embodiment, the thickness is 30 μm.

Thereafter, as in the first embodiment, as shown in FIG. 8, the resist 12 is removed, and the ITO (Sn-doped In 2 O 3) is formed on the N-type layer 6 made of the GaN material from which the support substrate 10 is removed and exposed. The transparent conductor electrode 7 is formed on substantially the entire surface, and an N-type bonding pad electrode (Au / Ni) is formed as a bonding pad electrode 8 at the center thereof.

  Next, as shown in FIG. 9, the YAG-THG laser (wavelength 355 nm) is irradiated in the direction of the arrow to form the groove 13 from the partial surface 51 of the P-type layer 4 to the middle of the conductive substrate 1. . Next, as shown in FIG. 10, a marking line 14 is inserted from the back side of the conductive substrate so as to face the groove 13 using an infrared transmission scribe device. By dividing along the marking line 14, the chip forming process can be completed. Further, a bonding wire 9 made of an Au material is ball-bonded on the bonding pad 8. Thereby, a nitride compound semiconductor light emitting device as shown in FIG. 12 can be manufactured.

  In Embodiments 1 and 2, Mo is used as the barrier layer, but alloys such as Pt / Mo, Ni, Ti, W, and Ni—Ti can also be used as other materials. Further, although the transparent electrode 7 is formed on substantially the entire surface of the N-type layer 6, it may be formed in a columnar shape, or the transparent electrode 7 may be omitted and only the N-type bonding pad electrode may be used.

  In the above-described embodiment of the present invention, the P-type layer and the second ohmic electrode are cited as the layer whose surface is exposed. However, as another embodiment, in the structure constituting the nitride semiconductor light-emitting device The surface exposed to the layer between the second ohmic electrode and the conductive substrate may be formed. Thereby, the short circuit of the PN junction can be reduced or eliminated during the chip division. Such control of the exposed layer can be adjusted by forming the groove to the target layer when forming the groove in the process of the present invention.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  1,100 conductive substrate, 2,102 first ohmic electrode, 3,101 second ohmic electrode, 4,103 P-type layer, 5,104 light emitting layer, 6,105 N-type layer, 7 transparent electrode, 8 Pad electrode, 9 bonding wire, 10 support substrate, 11 buffer layer, 12 resist, 13 groove, 14 marking line, 21 first bonding metal layer, 31 second bonding metal layer, 32 reflective metal layer, 50 first One surface of two ohmic electrodes, one surface of 51 P-type layer, 60 semiconductor layer, 106 negative electrode, 107 positive electrode.

Claims (13)

  1. A method for manufacturing a nitride-based compound semiconductor light-emitting device, comprising:
    Forming a nitride-based compound semiconductor layer on a substrate for crystal growth;
    Forming a second ohmic electrode and a second bonding metal layer in this order on the nitride-based semiconductor layer;
    Forming a first ohmic electrode and a first adhesive metal layer in this order on a conductive substrate;
    Bonding the second adhesive metal layer and the first adhesive metal layer;
    Removing the substrate for crystal growth;
    Exposing the surface of the second ohmic electrode by forming a first groove extending to the second ohmic electrode in the nitride compound semiconductor layer;
    A method for producing a nitride-based compound semiconductor light-emitting device comprising:
  2.   The method for manufacturing a nitride-based compound semiconductor light-emitting element according to claim 1, wherein the nitride-based compound semiconductor layer includes at least a P-type layer, a light-emitting layer, and an N-type layer.
  3. A method for manufacturing a nitride-based compound semiconductor light-emitting device, comprising:
    Forming a nitride-based compound semiconductor layer comprising at least a P-type layer, a light-emitting layer, and an N-type layer on a substrate for crystal growth;
    Forming a second ohmic electrode and a second bonding metal layer in this order on the nitride-based semiconductor layer;
    Forming a first ohmic electrode and a first adhesive metal layer in this order on a conductive substrate;
    Bonding the second adhesive metal layer and the first adhesive metal layer;
    Removing the substrate for crystal growth;
    Exposing the surface of the P-type layer by forming a first groove extending partway through the P-type layer in the nitride-based compound semiconductor layer;
    A method for producing a nitride-based compound semiconductor light-emitting device comprising:
  4.   The nitride-based compound according to any one of claims 1 to 3, wherein the conductive substrate is a semiconductor made of at least one selected from the group consisting of Si, GaAs, GaP, Ge, and InP. A method for manufacturing a semiconductor light emitting device.
  5.   The substrate for crystal growth is an insulating substrate of either sapphire, spinel or lithium niobate, or a conductive substrate of silicon carbide, silicon, zinc oxide or gallium arsenide, Item 5. A method for producing a nitride-based compound semiconductor light-emitting device according to any one of Items 1 to 4.
  6.   The area of the surface perpendicular to the layer thickness direction of the first metal layer for adhesion is larger than the area of the surface perpendicular to the layer thickness direction of the light emitting layer. A method for producing a nitride compound semiconductor light emitting device according to claim 1.
  7.   The method for manufacturing a nitride-based compound semiconductor light-emitting element according to claim 1, wherein the first groove is formed by etching.
  8.   The method for producing a nitride-based compound semiconductor light-emitting element according to claim 1, wherein the width of the first groove is 1 μm or more and 100 μm or less.
  9.   The nitride system according to claim 1, wherein a second groove is formed from a bottom surface of the first groove, and a nitride compound semiconductor light emitting device is obtained by dividing the second groove. A method for producing a compound semiconductor light emitting device.
  10.   The method for manufacturing a nitride-based compound semiconductor light-emitting element according to claim 9, wherein the second groove is formed from the bottom surface of the first groove to the middle of the conductive substrate.
  11.   11. The method of manufacturing a nitride-based compound semiconductor light-emitting element according to claim 9, wherein a width of the second groove is 1 μm or more and 50 μm or less.
  12.   The method for producing a nitride-based compound semiconductor light-emitting element according to claim 9, wherein a marking line is introduced from the back surface of the conductive substrate so as to face the second groove.
  13.   The nitride-based compound semiconductor light-emitting device according to claim 12, wherein the nitride-based compound semiconductor light-emitting element is obtained by dividing along the marking line introduced from the second groove and the back surface of the conductive substrate. Manufacturing method of light emitting element.
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CN102569537A (en) * 2010-12-10 2012-07-11 上海蓝光科技有限公司 Method for manufacturing light emitting diode chip with vertical structure
CN102810614A (en) * 2011-05-31 2012-12-05 奇力光电科技股份有限公司 Light-emitting diode device and method for manufacturing the same
US8759852B2 (en) 2010-07-23 2014-06-24 Kabushiki Kaisha Toshiba Semiconductor device having stacked body on substrate via joining metal and method for manufacturing the same

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US8759852B2 (en) 2010-07-23 2014-06-24 Kabushiki Kaisha Toshiba Semiconductor device having stacked body on substrate via joining metal and method for manufacturing the same
CN102569537A (en) * 2010-12-10 2012-07-11 上海蓝光科技有限公司 Method for manufacturing light emitting diode chip with vertical structure
CN102810614A (en) * 2011-05-31 2012-12-05 奇力光电科技股份有限公司 Light-emitting diode device and method for manufacturing the same

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