JP2010021412A - 半導体サイリスタ装置 - Google Patents
半導体サイリスタ装置 Download PDFInfo
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- JP2010021412A JP2010021412A JP2008181391A JP2008181391A JP2010021412A JP 2010021412 A JP2010021412 A JP 2010021412A JP 2008181391 A JP2008181391 A JP 2008181391A JP 2008181391 A JP2008181391 A JP 2008181391A JP 2010021412 A JP2010021412 A JP 2010021412A
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- wiring layer
- semiconductor
- thyristor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 description 48
- 239000002184 metal Substances 0.000 description 48
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Abstract
【構成】半導体基板と、各々が互いに接合型を異にし該半導体基板内で隣接して設けられることによって1つのサイリスタ素子を構成する2つのトランジスタと、該半導体基板上に設けられて該トランジスタの一方に接地電位を供給するための第1配線層と、該半導体基板上に設けられて該トランジスタの他方に電源電位を供給するための第2配線層と、を含む半導体サイリスタ装置であり、該第1配線層は、該半導体基板のうちで該2つのトランジスタが隣接し合う領域を被覆している。
【選択図】図3
Description
図示されるように、NPN型トランジスタQ0のエミッタ領域に相当するN型高濃度領域14はメタル配線層21を介して接地電位GNDに接続されている。また、NPN型トランジスタQ0のベース領域に相当するP型ウエル11はエミッタ領域に相当するN型高濃度領域14に接続されていることになる。さらに、NPN型トランジスタQ0のコレクタ領域に相当するN型ウエル12及びN型高濃度領域16はメタル配線層22を介して電源電位VDDに接続されている。
11 P型ウエル
12 N型ウエル
13、15 P型高濃度領域
14、16 N型高濃度領域
19 絶縁層
21、22、23 メタル配線層
30 電源間保護回路
31、32、33 電源パッド
50 ドライバロジック回路
60 アナログ回路
70 ドライバロジックコントロール回路
100、100a〜100d 半導体サイリスタ装置
200 LCDドライバチップ
Q0、Q1、Q2 トランジスタ
Claims (8)
- 半導体基板と、各々が互いに接合型を異にし前記半導体基板内で隣接して設けられることによって1つのサイリスタ素子を構成する2つのトランジスタと、前記半導体基板上に設けられて前記トランジスタの一方に接地電位を供給するための第1配線層と、前記半導体基板上に設けられて前記トランジスタの他方に電源電位を供給するための第2配線層と、を含む半導体サイリスタ装置であって、
前記第1配線層は、前記半導体基板のうちで前記2つのトランジスタが隣接し合う領域を被覆していることを特徴とする半導体サイリスタ装置。 - 前記第1配線層は、前記2つのトランジスタが隣接し合う領域のうちで少なくとも前記トランジスタの一方のベース領域を被覆していることを特徴とする請求項1記載の半導体サイリスタ装置。
- 前記第1配線層の端部は、前記トランジスタの他方のベース領域に達していることを特徴とする請求項2記載の半導体サイリスタ装置。
- 前記第1配線層及び前記第2配線層を覆って設けられ、これらと上位配線層とを電気的に絶縁する絶縁層を更に含むことを特徴とする請求項1乃至3のいずれかに記載の半導体サイリスタ装置。
- 前記上位配線層は、前記接地電位以外の電位を供給するための配線層であることを特徴とする請求項4記載の半導体サイリスタ装置。
- 前記上位配線層は、前記半導体基板に設けられる機能回路と信号パッドとの間を接続するための配線層であることを特徴とする請求項4記載の半導体サイリスタ装置。
- 前記サイリスタ素子は、前記接地電位と前記電源電位との間に発生し得るサージ電圧を吸収する電源間保護回路を構成することを特徴とする請求項1乃至3のいずれかに記載の半導体サイリスタ装置。
- 前記電源間保護回路は、前記電源電位を外部から取り込むための電源パッドに隣接して配置されていることを特徴とする請求項7記載の半導体サイリスタ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008181391A JP2010021412A (ja) | 2008-07-11 | 2008-07-11 | 半導体サイリスタ装置 |
US12/497,717 US20100006891A1 (en) | 2008-07-11 | 2009-07-06 | Semiconductor thyristor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008181391A JP2010021412A (ja) | 2008-07-11 | 2008-07-11 | 半導体サイリスタ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010021412A true JP2010021412A (ja) | 2010-01-28 |
Family
ID=41504352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008181391A Pending JP2010021412A (ja) | 2008-07-11 | 2008-07-11 | 半導体サイリスタ装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20100006891A1 (ja) |
JP (1) | JP2010021412A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016174119A (ja) * | 2015-03-18 | 2016-09-29 | セイコーエプソン株式会社 | 回路装置及び電子機器 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7968908B2 (en) * | 2009-09-21 | 2011-06-28 | International Business Machines Corporation | Bidirectional electrostatic discharge protection structure for high voltage applications |
US9614367B2 (en) * | 2013-09-13 | 2017-04-04 | Stmicroelectronics Sa | Electronic device for ESD protection |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03120830A (ja) * | 1989-10-04 | 1991-05-23 | Nec Corp | 半導体装置 |
JPH03136248A (ja) * | 1989-07-25 | 1991-06-11 | Nec Corp | 半導体装置 |
JPH0878630A (ja) * | 1994-08-19 | 1996-03-22 | Sgs Thomson Microelettronica Spa | 入出力端子での静電気放電に対してmos集積回路を保護する装置 |
JPH10189879A (ja) * | 1996-12-27 | 1998-07-21 | Sanyo Electric Co Ltd | 半導体集積回路 |
JP2001284537A (ja) * | 2000-04-03 | 2001-10-12 | Nec Corp | 半導体装置およびその製造方法 |
JP2002118178A (ja) * | 2000-08-11 | 2002-04-19 | Samsung Electronics Co Ltd | 半導体装置 |
JP2004281590A (ja) * | 2003-03-14 | 2004-10-07 | Rohm Co Ltd | 半導体装置 |
JP2006191069A (ja) * | 2004-12-30 | 2006-07-20 | Magnachip Semiconductor Ltd | Esd保護回路及びその製造方法 |
-
2008
- 2008-07-11 JP JP2008181391A patent/JP2010021412A/ja active Pending
-
2009
- 2009-07-06 US US12/497,717 patent/US20100006891A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03136248A (ja) * | 1989-07-25 | 1991-06-11 | Nec Corp | 半導体装置 |
JPH03120830A (ja) * | 1989-10-04 | 1991-05-23 | Nec Corp | 半導体装置 |
JPH0878630A (ja) * | 1994-08-19 | 1996-03-22 | Sgs Thomson Microelettronica Spa | 入出力端子での静電気放電に対してmos集積回路を保護する装置 |
JPH10189879A (ja) * | 1996-12-27 | 1998-07-21 | Sanyo Electric Co Ltd | 半導体集積回路 |
JP2001284537A (ja) * | 2000-04-03 | 2001-10-12 | Nec Corp | 半導体装置およびその製造方法 |
JP2002118178A (ja) * | 2000-08-11 | 2002-04-19 | Samsung Electronics Co Ltd | 半導体装置 |
JP2004281590A (ja) * | 2003-03-14 | 2004-10-07 | Rohm Co Ltd | 半導体装置 |
JP2006191069A (ja) * | 2004-12-30 | 2006-07-20 | Magnachip Semiconductor Ltd | Esd保護回路及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016174119A (ja) * | 2015-03-18 | 2016-09-29 | セイコーエプソン株式会社 | 回路装置及び電子機器 |
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US20100006891A1 (en) | 2010-01-14 |
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