JP2010019620A - Scintillator panel, radiation detection apparatus, and method for manufacturing radiation detection apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a scintillator panel providing an image with less image defect, a radiation detection apparatus and a method for manufacturing a radiation detection apparatus. <P>SOLUTION: The scintillator panel includes a substrate, a reflection layer provide on the substrate, an intermediate layer formed on the reflection layer, and a scintillator layer formed on the intermediate layer. An antistatic layer not continuing to cover the layers except on the scintillator layer is formed on the scintillator layer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a scintillator panel used for forming a radiographic image of a subject, a radiation detection apparatus using the scintillator panel, and a method for manufacturing the radiation detection apparatus.

  Conventionally, radiographic images such as X-ray images have been widely used for diagnosis of medical conditions in the medical field. In particular, radiographic images using intensifying screen-film systems have been developed as an imaging system that combines high reliability and excellent cost performance as a result of high sensitivity and high image quality in the long history. Used in the medical field.

  However, these pieces of image information are so-called analog image information, and free image processing and instantaneous electric transmission cannot be performed like the digital image information that has been developed in recent years.

  In recent years, digital radiographic image detection apparatuses represented by computed radiography (CR), flat panel type radiation detectors (FPD) and the like have appeared. With these, digital radiographic images can be directly obtained, and images can be directly displayed on an image display device such as a cathode ray tube or a liquid crystal panel.

  As a result, these digital X-ray image detection devices reduce the need for image formation by the silver halide photography method, and greatly improve the convenience of diagnosis work in hospitals and clinics.

  The above computed radiography (CR) is now accepted in the medical field. However, the image quality level of the screen / film system has not been reached due to insufficient sharpness and insufficient spatial resolution.

  Further, as new digital X-ray imaging techniques, for example, the magazine Physics Today, November 1997, page 24, John Laurans' paper “Amorphous Semiconductor User in Digital X-ray Imaging”, magazine SPIE Vol. 32, 1997. A flat-plate X-ray detector using a thin film transistor (TFT) described in a paper by El Antonuk on “Development of a High Resolution, Active Matrix, Flat-Panel Imager with Enhanced Fill Factor”, etc. Has been developed.

  The flat panel radiation detection device (FPD) is smaller in size than the CR, and is characterized by superior image quality at a high dose. These FPDs are provided with a scintillator panel having a phosphor layer that emits fluorescence by radiation, and a photodetector arranged to face the phosphor layer.

  As a configuration of the scintillator panel, a configuration in which a reflection layer is provided together with a phosphor layer on a substrate to improve efficiency in a photodetector is known, and a metal film such as aluminum is used as the reflection layer. Are known. When a metal film such as aluminum is used as the reflection layer, alteration based on moisture occurs, and the function as the reflection film may be reduced. The structure which provides a protective film is known (refer patent document 1).

  And the structure which has a scintillator layer which is a fluorescent substance layer on a protective layer, and provides a moisture-resistant protective layer on a scintillator layer is known (refer patent document 2).

  The radiation detection apparatus has a configuration in which a photodetector is disposed facing the scintillator layers of these scintillator panels.

  As a method of disposing the photodetector so as to face the scintillator layer, there are a method in which the scintillator panel and the photodetector are brought into contact with each other, a method in which the scintillator panel is detachably attached, and a method in which the scintillator panel is simply in contact. The latter method has an advantage that in the case of a failure of the scintillator panel, it is possible to deal with the trouble of the radiation detection device by simply replacing the scintillator panel.

However, there has been a problem that, in use, an image defect may occur due to static electricity that may occur when the scintillator panel and the photodetector are brought into contact with or separated from each other.
JP 2000-356679 A JP 2007-279051 A

  An object of the present invention is to provide a scintillator panel, a radiation detection apparatus, and a method for manufacturing the radiation detection apparatus that provide an image with few image defects.

The above object of the present invention can be achieved by the following constitution.
1. In a scintillator panel having a substrate, a reflective layer provided on the substrate, an intermediate layer provided on the reflective layer, and a scintillator layer provided on the intermediate layer, on the scintillator layer, A scintillator panel comprising an antistatic layer that is not continuous except on the scintillator layer.
2. 2. The scintillator panel according to 1, wherein a protective layer is provided between the scintillator layer and the antistatic layer.
3. The scintillator panel according to 1 or 2, wherein the antistatic layer is transparent.
4.1-3 A radiation detection apparatus comprising a photodetector having the scintillator panel and the photoelectric conversion element unit according to any one of 1 to 3, wherein the antistatic layer and the photoelectric conversion element unit are in contact with each other. A radiation detection apparatus characterized by comprising:
5.4. The method for producing a radiation detection apparatus according to 5.4, wherein the antistatic layer side surface of the scintillator panel and the surface of the photoelectric conversion element portion are bonded together.

  With the above configuration of the present invention, it is possible to provide a scintillator panel, a radiation detection apparatus, and a method for manufacturing the radiation detection apparatus that provide an image with few image defects.

  The present invention provides a scintillator panel having a substrate, a reflective layer provided on the substrate, an intermediate layer provided on the reflective layer, and a scintillator layer provided on the intermediate layer. It is characterized by having an antistatic layer which is not continuous except on the scintillator layer on the layer.

  In the present invention, by providing an antistatic layer only on the scintillator layer, it is possible to obtain a scintillator panel and a radiation detection apparatus that give an image with few image defects.

  Hereinafter, the best mode for carrying out the present invention will be described with reference to FIGS. However, the scope of the invention is not limited to the illustrated examples.

  FIG. 1 is a cross-sectional view of an example of the scintillator panel of the present invention. FIG. 2 is a schematic view showing a method of manufacturing the scintillator panel of the present invention. FIG. 3 is a cross-sectional view of the radiation detection apparatus of the present invention. FIG. 4 is a diagram illustrating the antistatic layer.

  In the example shown in FIG. 1, a scintillator panel 10 has a reflective layer 2 on a substrate 1, an intermediate layer 3 on the reflective layer 2, a scintillator layer 4 on the intermediate layer 3, and An antistatic layer 6 is provided thereon. A mode in which a protective layer is provided between the antistatic layer 6 and the scintillator layer 4 as in the example of FIG. 1 is preferable.

(substrate)
The substrate according to the present invention is a plate-like film body that can carry a reflective layer, and can transmit 10% or more of radiation such as X-rays with respect to an incident dose.

  As the substrate, various glasses, polymer materials, metals, and the like can be used. For example, glass substrates such as quartz, borosilicate glass, chemically tempered glass, ceramic substrates such as sapphire, silicon nitride, silicon carbide, semiconductor substrates such as silicon, germanium, gallium arsenide, gallium phosphide, gallium nitrogen, cellulose acetate film, polyester Metal having a coating layer of metal sheet or metal oxide such as film, polyethylene terephthalate film, polyamide film, polyimide film, triacetate film, polycarbonate film, carbon fiber reinforced resin sheet, aluminum sheet, iron sheet, copper sheet A sheet or the like can be used.

  Among these, from the viewpoint of durability and weight reduction, an aluminum sheet, a carbon fiber reinforced resin sheet, and a polyimide film are preferably used.

  Moreover, it is preferable that the thickness of a board | substrate exists in the range of 50 micrometers-500 micrometers from a viewpoint of an improvement of tolerance or weight reduction.

(Reflective layer)
When radiation is incident on the scintillator panel 10 from the direction of the substrate 1 toward the scintillator layer 4, the radiation incident on the scintillator layer 4 is absorbed by the phosphors in the scintillator layer 4, and the scintillator layer 4. 4, electromagnetic waves (light) are emitted from the phosphor according to the intensity of the incident radiation.

  Some of the emitted electromagnetic waves reach the surface (radiation surface) opposite to the surface on which the radiation of the scintillator layer 4 is incident, but some light radiates in the direction toward the substrate 1 side.

  The reflective layer 2 according to the present invention is a layer that can reflect an electromagnetic wave radiating and traveling in the direction toward the substrate 1.

  A metal thin film is preferably used as the reflective layer. As the metal thin film, a film made of a material containing a substance in the group consisting of Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt and Au is preferably used. Further, two or more metal thin films may be formed such as forming an Au film on the Cr film.

  In the present invention, an embodiment using a film containing aluminum among the above as the reflective layer is a preferred embodiment.

  A layer such as a layer made of polyimide may be provided between the substrate 1 and the reflective layer 2 depending on the material of the substrate 1.

  The thickness of the reflective layer is preferably 0.005 to 0.3 [mu] m, more preferably 0.01 to 0.2 [mu] m, from the viewpoint of emission light extraction efficiency.

(Middle layer)
The intermediate layer 3 according to the present invention is a layer between the reflective layer 2 and the scintillator layer 4 and has a function of protecting the reflective layer 2 from moisture and the like, and includes the following resin-containing layers. .

  For example, polyester resins, polyacrylic acid copolymers, polyacrylamide or derivatives and partial hydrolysates thereof, vinyl polymers such as polyvinyl acetate, polyacrylonitrile, polyacrylic acid esters and copolymers thereof, rosin, shellac And other natural products and derivatives thereof.

  Also used are emulsions of styrene-butadiene copolymers, polyacrylic acid, polyacrylates and derivatives thereof, polyvinyl acetate, vinyl acetate-acrylate copolymers, polyolefins, olefin-vinyl acetate copolymers, etc. be able to. In addition, organic semiconductors such as carbonates, polyesters, urethanes, epoxy resins, polyvinyl chloride, polyvinylidene chloride, and polypyrrole can also be used. Among these, a polyester resin is preferable.

  Specific examples of polyester resins include polybasic acids such as phthalic anhydride, terephthalic acid, isophthalic acid, tetrachlorophthalic anhydride, hexachloroendomethylenetetrahydrophthalic anhydride, dimethylenetetrahydrophthalic acid, succinic acid, adipic acid, Saturated polybasic acids such as sebacic acid, etc., or polybasic acids such as unsaturated polybasic acids such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, citraconic anhydride, and the like, for example, ethylene glycol, diethylene glycol, triethylene Dihydric alcohols such as glycol, propylene glycol, 1,3-butylene glycol, 2,3-butylene glycol, 1,4-butylene glycol, trimethylene glycol and tetramethylene glycol, and trihydric alcohols such as glycerin and trimethylolpropane And polyester resins obtained by condensation reaction with polyols such as polyalcohols such as pentaerythritol, dipentaerythritol, mannitol and sorbit, and bisphenols such as 2,2-diphenylpropane (bisphenol A). It is done.

  An intermediate | middle layer can be formed by apply | coating and drying using the coating liquid which melt | dissolved the said resin in the solvent. Solvents include lower alcohols such as methanol, ethanol, n-propanol and n-butanol, hydrocarbons containing chlorine atoms such as methylene chloride and ethylene chloride, ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone, toluene, benzene, cyclohexane, List aromatic compounds such as cyclohexanone and xylene, esters of lower fatty acids and lower alcohols such as methyl acetate, ethyl acetate, and butyl acetate, ethers such as dioxane, ethylene glycol monoethyl ester, ethylene glycol monomethyl ester, and mixtures thereof. Can do.

  The thickness of the intermediate layer is preferably from 0.1 to 20 μm, more preferably from 0.2 to 2.5 μm from the viewpoint of impact resistance.

<Scintillator layer>
The scintillator layer 4 formed on the intermediate layer 3 will be described.

  The scintillator layer 4 is a layer containing a radiation phosphor that emits fluorescence when irradiated with radiation.

  The radiation phosphor that can be used in the present invention has a relatively high change rate from radiation to visible light, and can easily be formed into a columnar crystal structure by vapor deposition. Cesium iodide (CsI) is preferable because it is possible to suppress the scattering of light and to increase the thickness of the scintillator layer.

  However, since CsI alone has low luminous efficiency, various activators are added. For example, as shown in Japanese Patent Publication No. 54-35060, a mixture of CsI and sodium iodide (NaI) at an arbitrary molar ratio can be mentioned.

  Recently, for example, as disclosed in Japanese Patent Application Laid-Open No. 2001-59899, CsI is vapor-deposited to form indium (In), thallium (Tl), lithium (Li), potassium (K), rubidium (Rb), sodium ( An X-ray phosphor manufacturing method for forming an activation material such as Na) by sputtering has also been devised.

  Moreover, it is good also as a structure which uses CsBr, CsCl, etc. instead of CsI which is fluorescent substance used as a base. In addition, the scintillator layer 3 may be one in which crystals are formed based on a mixed crystal in which two or more kinds of phosphors are formed at an arbitrary mixing ratio among the above-described CsI, CsBr, and CsCl.

  The scintillator layer 4 can be formed by a conventionally known method. In the present invention, the scintillator layer 4 is preferably a scintillator layer formed by a vapor deposition method.

  FIG. 2 is a schematic diagram of a vapor deposition apparatus 20 that forms a scintillator layer on a substrate having an intermediate layer by vapor deposition.

  In FIG. 2, the vapor deposition apparatus 20 includes a vacuum vessel 22, a substrate holder 25 that is disposed in the vacuum vessel 22 and holds the substrate 1 having the reflective layer 2 and the intermediate layer 3, and an evaporation source 23.

  Furthermore, a substrate rotating mechanism 24 for depositing vapor from the evaporation source 23 by rotating the substrate holder 25 with respect to the evaporation source 23, a vacuum pump 21 for exhausting the vacuum container 22 and introducing the atmosphere, and the like are provided. Yes.

  The evaporation source 23 contains a scintillator layer forming material and is heated by a resistance heating method. Therefore, the evaporation source 23 may be composed of an alumina crucible wound with a heater, or a boat or a heater made of a refractory metal. Also good. In addition to the resistance heating method, the scintillator layer forming material may be heated by an electron beam, a high frequency induction, or the like. The resistance heating method is preferably used because it can be applied to many substances.

  The substrate holder 25 is preferably provided with a heater (not shown) for heating the substrate 1 having the reflective layer 2 and the intermediate layer 3. Moreover, it is preferable that the vapor deposition apparatus 20 is provided with the heater (not shown) which heats the atmosphere in an apparatus.

  A shutter (not shown) that blocks a space from the evaporation source 23 to the intermediate layer 3 may be provided between the intermediate layer 3 and the evaporation source 23. Substances other than the target attached to the surface of the scintillator layer forming material by the shutter can be prevented from evaporating at the initial stage of vapor deposition and adhering to the intermediate layer 3.

  The scintillator layer 4 is preferably formed by a vapor deposition method. In the vapor deposition method, the substrate 1 is placed in a known vapor deposition apparatus, and after the raw material of the scintillator layer 4 containing cesium iodide, thallium, alkali metal or alkaline earth metal is filled in the vapor deposition source, the apparatus is evacuated at the same time. An inert gas such as argon or nitrogen is introduced from the inlet to make a vacuum of about 0.1 Pa to 5.0 Pa, and then the raw material is heated and evaporated by a method such as a resistance heating method or an electron beam method to surface the substrate 1 A vapor deposited crystal of cesium iodide is deposited on the substrate 1 to form a scintillator layer 4 on the substrate 1.

  As temperature which heats the vapor deposition source 23, 500 to 800 degreeC is preferable, and especially 630 to 750 degreeC is preferable. The substrate temperature is preferably 100 ° C to 250 ° C, and particularly preferably 150 ° C to 250 ° C. By setting the substrate temperature within this range, the shape of the columnar crystal is improved and the luminance characteristics are improved.

  The distance between the evaporation source 23 and the substrate 1 is preferably 100 to 1500 mm, and more preferably 200 to 600 mm.

  In the scintillator panel of the present invention, the most preferable aspect is that the columnar crystal mainly composed of CsI is formed as the scintillator layer 4 on the intermediate layer 3 by vapor deposition.

  The film thickness of the scintillator layer is preferably 100 μm to 800 μm, and particularly preferably 120 μm to 600 μm. By setting the film thickness within this range, the luminance and sharpness can be further improved.

(Protective layer)
The antistatic layer 6 according to the present invention is provided on the scintillator layer 4, but preferably has a protective layer 5 between the scintillator layer 4.

  The protective layer 5 is a layer for protecting the phosphor, and examples thereof include a layer containing the following resin.

  For example, polyurethane, vinyl chloride copolymer, vinyl chloride-vinyl acetate copolymer, vinyl chloride-vinylidene chloride copolymer, vinyl chloride-acrylonitrile copolymer, butadiene-acrylonitrile copolymer, polyamide resin, polyvinyl butyral, polyester , Cellulose derivatives (cellulose acetate, nitrocellulose, etc.), polyimide, polyamide, polyparaxylylene, styrene-butadiene copolymers, various synthetic rubber resins, phenol resins, epoxy resins, urea resins, melamine resins, phenoxy resins, Examples thereof include silicon resins, acrylic resins, urea formamide resins, and the like.

  Of these, polyparaxylylene, cellulose derivatives, acrylic resins, polyurethane, and polyimide are preferably used.

  The thickness of the protective layer is preferably 10 μm or more and 60 μm or less, and more preferably 20 μm or more and 50 μm or less.

(Antistatic layer)
The antistatic layer 6 according to the present invention is a layer having an antistatic function and has a surface resistance value of 10 ¹¹ Ω / □ or less. The surface resistance value of the antistatic layer 6 is further preferably 10 ¹ Ω / □ to 10 ¹⁰ Ω / □, and particularly preferably 10 ³ Ω / □ to 10 ⁹ Ω / □.

  The antistatic layer 6 can be obtained by adding an antistatic agent to the layer. Examples of the antistatic agent include the following. For example, there are carbon particles (carbon black, graphite, carbon fiber, carbon nanotube) and oxide semiconductor particles (zinc oxide, tin oxide, indium oxide).

Moreover, as an antistatic layer, only the material which has the following antistatic functions may be sufficient. For example, surfactant (tetraalkylammonium salt, trialkylbenzylammonium salt, alkylsulfonate, alkylfort, glycerin fatty acid ester, polyoxyethylene alkyl ether), hydrophilic polymer (sulfonate, quaternary ammonium salt) , Polyethylene glycol methacrylate copolymer, polyether ester amide, polyether amide imide, polyethylene oxide-epichlorohydrin copolymer), conductive polymer (polyacetylene, polypyrrole, polythiophene, polyaniline, poly (3,4-dialkylpyrrole), Poly (3,4-ethylenedioxythiophene), poly (aniline sulfonic acid)), and metal films (indium-doped tin oxide (ITO), silicon dioxide (SiO ₂ )).

  Among these, surfactants, hydrophilic polymers, and metal films are preferable.

  In order to form the antistatic layer, if the layer contains an antistatic agent, it may be mixed with a binder and the mixture applied. When using only a material having an antistatic function, the material is applied directly. As a coating method, bar coating, reverse coating, or gravure printing may be used. In the case of a metal film, vapor deposition or sputtering may be used.

  The thickness of the antistatic layer is preferably 1 nm to 10 μm, particularly preferably 10 nm to 5 μm.

  The antistatic layer according to the present invention is preferably transparent. “Transparent” means that the value of light transmittance at a scintillator emission wavelength is 70% or more. The light transmittance indicates a value measured with a spectrophotometer (U-1800) manufactured by Hitachi High-Technologies Corporation.

  The antistatic layer according to the present invention does not continue except on the scintillator layer.

  The term “on the scintillator layer” means above the surface of the scintillator layer opposite to the substrate when viewed from the substrate side.

  “Continuous except on the scintillator layer” means that, for example, in the configuration shown in the example of FIG.

  FIG. 4 shows an antistatic layer 6 having an aspect of the present application that is not continuous except on the scintillator layer, and an antistatic layer 8 that is continuous except on the scintillator layer.

(Radiation detector)
FIG. 3 is a cross-sectional view of the radiation detection apparatus of the present invention.

  The radiation detection apparatus 30 of the present invention includes a photodetector 7 having a photoelectric conversion element portion 9 facing the scintillator layer 4.

  The photodetector 7 has a function of converting light emitted from the scintillator layer into an electric signal, and includes a photoelectric conversion member including a solid-state light detection element such as a photodiode, a CCD, or a CMOS sensor. The detected electrical signal is A / D converted, output as a radiographic image signal, and used as image data.

  The radiation detection apparatus of the present invention can be produced by bonding the surface of the antistatic layer 6 and the surface of the photoelectric conversion element portion 9 shown in FIG.

  In bonding, the sizes of the scintillator panel and the photodetector are measured, and the value of this size is used to prepare each to be fixed with little pressure applied to the surfaces to be bonded. be able to.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in detail, this invention is not limited to these.

Production of scintillator panel 1 (comparative example) (production of reflective layer)
A reflective layer (0.01 μm) was formed by sputtering aluminum on a 125 μm-thick polyimide film (UPILEX-125S manufactured by Ube Industries).

(Preparation of intermediate layer)
Byron 200 (Toyobo Co., Ltd .: high molecular polyester resin) (glass transition temperature: 67 ° C.)
100 parts by mass Methyl ethyl ketone (MEK) 100 parts by mass Toluene 100 parts by mass The above formulations were mixed and dispersed in a bead mill for 15 hours to obtain a coating solution for coating an intermediate layer. This coating solution was applied by a bar coater so that the dry film thickness was 1.5 μm on the aluminum surface of the substrate. The temperature of the glass transition point of this coating film is 67 ° C.

(Formation of scintillator layer)
A scintillator phosphor (CsI: 0.003Tl) was vapor-deposited on the intermediate layer side of the polyimide film using the vapor deposition apparatus shown in FIG. 2 to form a scintillator (phosphor) layer.

  First, a resistance heating crucible is filled with the phosphor raw material as an evaporation material, and a support (polyimide film provided with a reflective layer and an intermediate layer) is installed on a rotating substrate holder. Was adjusted to 400 mm.

  Subsequently, the inside of the vapor deposition apparatus was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.5 Pa, and then the support was rotated at a speed of 10 rpm.

  Furthermore, the temperature of the intermediate layer was maintained at 200 ° C. using a heating device (not shown) in the vapor deposition apparatus. At this time, the substrate is maintained at the same temperature as the intermediate layer. Next, the resistance heating crucible was heated to deposit the phosphor, and when the scintillator layer had a thickness of 500 μm, the deposition was terminated to obtain the scintillator plate 1.

(Preparation of protective film)
Fluorine resin: fluoroolefin-vinyl ether copolymer (Lumiflon LF100 manufactured by Asahi Glass Co., Ltd., 50 mass% xylene solution), 50 g, crosslinking agent: isocyanate (Coronate HX manufactured by Nippon Polyurethane Co., Ltd., solid content: 100 mass%) 5 g, and alcohol-modified 0.5 g of silicone oligomer (having a dimethylpolysiloxane skeleton and having hydroxyl groups (carbinol groups) at both ends, manufactured by Shin-Etsu Chemical Co., Ltd., X-22-2809, solid content: 66% by mass) in a methyl ethyl ketone solvent This was added to prepare a coating solution having a viscosity of 0.1 to 0.3 Pa · s. Next, a mixed dispersion of silica (average particle size: 3.0 μm) previously dispersed in methyl ethyl ketone is added to the coating solution, and the mixture is applied to the surface of the PET film using a doctor blade, and then at 120 ° C. for 20 minutes. A protective film having a thickness of 50 μm was formed by heat treatment and heat curing.

(Scintillator plate sealing)
The scintillator plate 1 obtained as described above was sealed using the protective film described above under reduced pressure, and a scintillator panel 1 was obtained by providing a protective layer on the scintillator layer.

<Evaluation>
The obtained scintillator panel 1 was set in a CMOS flat panel (X-ray CMOS camera system Shad-o-Box 4KEV manufactured by Radicon). Next, the scintillator panel was removed and set again. This operation was repeated 10 times, and finally the radiation detector 1 was obtained by setting the scintillator panel on the CMOS flat panel.

Using this radiation detection apparatus 1, the number of image defects generated by setting the scintillator panel was measured from 12-bit output data. Here, the image defect is a pixel showing a signal of 90% or less and 110% or more of the average signal of the image. The number of image defects was determined by measuring the number per 500 pixels × 500 pixels and using the following criteria.
<Judgment criteria for image defects>
Number of image defects per 500 pixels × 500 pixels ○ ··· 2 or less Δ ······ 3 to 19 × ···· 20 or more The above set was performed as follows.

  A planar light-receiving element surface (light conversion element part of the light conversion element part) provided with a photo detector provided with a photoelectric conversion element part, with a sponge sheet disposed on the radiation incident side (the phosphor-free side) of the carbon plate of the radiation incident window and the scintillator panel. The surface) and the scintillator panel (scintillator layer side surface) were lightly pressed to fix both to obtain the radiation detection apparatus 1.

(Production of scintillator panel 2 (comparative example))
Next, an indium doped tin oxide (ITO) film having a thickness of 50 nm is continuously formed on the surface of the protective layer of the scintillator plate 1 by sputtering as an antistatic layer, and is shown in the schematic cross-sectional view of FIG. A scintillator panel 2 like this was obtained. An antistatic layer 6 is provided on the entire surface of the protective layer 5.

  In the radiation detection apparatus 1, the radiation detection apparatus 2 was obtained in the same manner as the radiation detection apparatus 1 except that the scintillator panel 2 was used in place of the scintillator plate 1. Evaluation similar to the above was performed using the radiation detection apparatus 2.

(Production of scintillator panel 3 (present invention))
In the production of the scintillator panel 2, as the antistatic layer, the surface of the protective layer (the surface of the protective layer facing the photodetector of the CMOS flat panel) facing the planar light-receiving element surface (the surface of the light conversion element portion) as the antistatic layer The scintillator panel 3 as shown in FIG. 6 was obtained in the same manner as the scintillator panel 2 except that the scintillator panel 2 was formed. The antistatic layer 6 is provided only on the scintillator layer 4.

  Evaluation similar to the above was performed using the radiation detection apparatus 3 obtained by using this scintillator plate 3. The difference from the radiation image sensor 2 is that the indium-doped tin oxide (ITO) film is not continuous except for the scintillator layer on the surface of the protective film.

(Production of scintillator panel 4 (present invention))
In the production of the scintillator panel 3, as an antistatic layer, a coating liquid in which indium oxide (In ₂ O ₃ ) is dispersed in a binder is applied, and the antistatic layer having a thickness of 3 μm is formed on a planar light receiving element surface (light converting element part). The scintillator panel 4 was obtained in the same manner as the scintillator panel 3 except that it was formed only on the surface of the protective layer (surface facing the photodetector of the CMOS flat panel of the protective layer). The antistatic layer 6 is provided only on the scintillator layer 4.

  Evaluation similar to the above was performed using the radiation detection apparatus 4 obtained by using this scintillator panel 4.

  Table 1 shows the evaluation results of these four radiation detection devices.

  From the results shown in Table 1, the radiation detection device 3 and the radiation detection device 4 having the antistatic layer on the scintillator layer are compared with the radiation detection device 1 having no antistatic layer and the radiation detection device 2 having the antistatic layer on the entire surface. It can be seen that the radiation detection apparatus can suppress an increase in image defects due to the setting of the scintillator plate and provides an image with few image defects.

It is sectional drawing which shows schematic structure of a scintillator panel. It is a block diagram which shows schematic structure of a vapor deposition apparatus. It is sectional drawing which shows schematic structure of a radiation detection apparatus. It is a figure explaining an antistatic layer. It is a schematic cross section of the scintillator panel used for the example. It is a schematic cross section of the scintillator panel used for the example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Reflective layer 3 Intermediate | middle layer 4 Scintillator layer 5 Protective layer 6 Antistatic layer 7 Photodetector 8 Antistatic layer continuous except on a scintillator layer 9 Photoelectric conversion element part 10 Scintillator panel 20 Deposition apparatus 21 Vacuum pump 22 Vacuum container 23 Evaporation source 24 Rotating mechanism 25 Substrate holder 30 Radiation detector

Claims (5)

In a scintillator panel having a substrate, a reflective layer provided on the substrate, an intermediate layer provided on the reflective layer, and a scintillator layer provided on the intermediate layer, on the scintillator layer, A scintillator panel comprising an antistatic layer that is not continuous except on the scintillator layer. The scintillator panel according to claim 1, further comprising a protective layer between the scintillator layer and the antistatic layer. The scintillator panel according to claim 1 or 2, wherein the antistatic layer is transparent. It is a radiation detection apparatus provided with the photodetector which comprises the scintillator panel and photoelectric conversion element part of any one of Claims 1-3, Comprising: The said antistatic layer and this photoelectric conversion element part contact A radiation detection apparatus characterized by comprising: The method for manufacturing a radiation detection apparatus according to claim 4, wherein the surface of the scintillator panel on the antistatic layer side and the surface of the photoelectric conversion element portion are bonded together.

Images