JP2009525937A5 - - Google Patents
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- JP2009525937A5 JP2009525937A5 JP2008554132A JP2008554132A JP2009525937A5 JP 2009525937 A5 JP2009525937 A5 JP 2009525937A5 JP 2008554132 A JP2008554132 A JP 2008554132A JP 2008554132 A JP2008554132 A JP 2008554132A JP 2009525937 A5 JP2009525937 A5 JP 2009525937A5
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- 239000007789 gas Substances 0.000 claims description 190
- 238000006243 chemical reaction Methods 0.000 claims description 104
- 239000011261 inert gas Substances 0.000 claims description 83
- 239000002245 particle Substances 0.000 claims description 80
- 239000011856 silicon-based particle Substances 0.000 claims description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 73
- 229910052710 silicon Inorganic materials 0.000 claims description 68
- 239000010703 silicon Substances 0.000 claims description 63
- 238000002347 injection Methods 0.000 claims description 57
- 239000007924 injection Substances 0.000 claims description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 43
- 239000012495 reaction gas Substances 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 12
- 238000007599 discharging Methods 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000006227 byproduct Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000003139 buffering effect Effects 0.000 claims description 3
- 238000013016 damping Methods 0.000 claims description 3
- 229910021397 glassy carbon Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 29
- 239000000047 product Substances 0.000 description 29
- 239000012535 impurity Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 17
- 238000007789 sealing Methods 0.000 description 16
- 230000008859 change Effects 0.000 description 14
- 238000009826 distribution Methods 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 239000010419 fine particle Substances 0.000 description 8
- 238000001556 precipitation Methods 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000011437 continuous method Methods 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000005049 silicon tetrachloride Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000003546 flue gas Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011860 particles by size Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- -1 silane compound Chemical class 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060011493A KR100756310B1 (ko) | 2006-02-07 | 2006-02-07 | 입자형 다결정실리콘 제조용 고압 유동층반응기 |
| KR10-2006-0011493 | 2006-02-07 | ||
| PCT/KR2007/000657 WO2007091834A1 (en) | 2006-02-07 | 2007-02-07 | High-pressure fluidized bed reactor for preparing granular polycrystalline silicon |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009525937A JP2009525937A (ja) | 2009-07-16 |
| JP2009525937A5 true JP2009525937A5 (https=) | 2009-12-24 |
| JP4955706B2 JP4955706B2 (ja) | 2012-06-20 |
Family
ID=38345388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008554132A Expired - Fee Related JP4955706B2 (ja) | 2006-02-07 | 2007-02-07 | 粒状多結晶シリコン製造用流動層反応器 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7972562B2 (https=) |
| EP (1) | EP1984297B1 (https=) |
| JP (1) | JP4955706B2 (https=) |
| KR (1) | KR100756310B1 (https=) |
| CN (1) | CN101378989B (https=) |
| ES (1) | ES2436770T3 (https=) |
| RU (1) | RU2397952C2 (https=) |
| WO (1) | WO2007091834A1 (https=) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100756310B1 (ko) * | 2006-02-07 | 2007-09-07 | 한국화학연구원 | 입자형 다결정실리콘 제조용 고압 유동층반응기 |
| KR100783667B1 (ko) * | 2006-08-10 | 2007-12-07 | 한국화학연구원 | 입자형 다결정 실리콘의 제조방법 및 제조장치 |
| DE102007021003A1 (de) | 2007-05-04 | 2008-11-06 | Wacker Chemie Ag | Verfahren zur kontinuierlichen Herstellung von polykristallinem hochreinen Siliciumgranulat |
| US8790782B2 (en) * | 2008-07-02 | 2014-07-29 | E I Du Pont De Nemours And Company | Method for making glass frit powders using aerosol decomposition |
| CN101318654B (zh) * | 2008-07-04 | 2010-06-02 | 清华大学 | 一种流化床制备高纯度多晶硅颗粒的方法及流化床反应器 |
| CN103058194B (zh) | 2008-09-16 | 2015-02-25 | 储晞 | 生产高纯颗粒硅的反应器 |
| DE102009043947B4 (de) | 2009-09-04 | 2011-07-07 | G+R Technology Group AG, 93128 | Anlage zur Herstellung von polykristallinem Silizium mit Vorrichtung zum Ausleiten gasförmiger Messproben |
| US9023425B2 (en) | 2009-11-18 | 2015-05-05 | Rec Silicon Inc | Fluid bed reactor |
| JP5637013B2 (ja) * | 2010-03-04 | 2014-12-10 | 三菱マテリアル株式会社 | トリクロロシラン製造装置及び製造方法 |
| US8404199B2 (en) | 2010-08-06 | 2013-03-26 | Empire Technology Development Llc | Fluorine based vanadium boride nanoparticle synthesis |
| KR101329030B1 (ko) * | 2010-10-01 | 2013-11-13 | 주식회사 실리콘밸류 | 유동층 반응기 |
| KR101057101B1 (ko) * | 2010-10-12 | 2011-08-17 | (주)기술과가치 | 입자형 다결정실리콘 제조용 유동층 반응기 및 이를 이용한 다결정 실리콘 제조방법 |
| US20120100061A1 (en) | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
| US8449848B2 (en) | 2010-10-22 | 2013-05-28 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems |
| US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
| US8849584B2 (en) * | 2010-12-29 | 2014-09-30 | Sunedison, Inc. | Systems and methods for particle size determination and control in a fluidized bed reactor for use with thermally decomposable silicon-containing gas |
| US8452547B2 (en) | 2010-12-29 | 2013-05-28 | Memc Electronic Materials, Inc. | Systems and methods for particle size determination and control in a fluidized bed reactor |
| US20120183686A1 (en) * | 2011-01-19 | 2012-07-19 | Rec Silicon Inc. | Reactor system and method of polycrystalline silicon production therewith |
| KR101329033B1 (ko) * | 2011-04-20 | 2013-11-14 | 주식회사 실리콘밸류 | 유동층 반응기 |
| US20130129570A1 (en) * | 2011-04-20 | 2013-05-23 | Siliconvalue Llc. | Polycrystal silicon manufacturing apparatus |
| KR101329032B1 (ko) * | 2011-04-20 | 2013-11-14 | 주식회사 실리콘밸류 | 다결정 실리콘 제조장치 및 이를 이용한 다결정 실리콘의 제조방법 |
| KR101356391B1 (ko) * | 2011-04-20 | 2014-02-03 | 주식회사 실리콘밸류 | 다결정 실리콘 제조장치 |
| KR101329035B1 (ko) | 2011-04-20 | 2013-11-13 | 주식회사 실리콘밸류 | 유동층 반응기 |
| TW201304864A (zh) * | 2011-06-10 | 2013-02-01 | Rec Silicon Inc | 高純度矽塗佈顆粒之製造 |
| JP5897851B2 (ja) * | 2011-09-12 | 2016-04-06 | 東洋炭素株式会社 | 粉体処理装置および粉体処理方法 |
| WO2013049325A1 (en) | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| WO2013049314A2 (en) | 2011-09-30 | 2013-04-04 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon by the thermal decomposition of silane in a fluidized bed reactor |
| KR20130053693A (ko) * | 2011-11-16 | 2013-05-24 | 주식회사 실리콘밸류 | 유동층 반응기 |
| KR101432896B1 (ko) * | 2012-10-29 | 2014-08-21 | 웅진에너지 주식회사 | 폴리실리콘 제조용 유동층 반응기 |
| US9212421B2 (en) | 2013-07-10 | 2015-12-15 | Rec Silicon Inc | Method and apparatus to reduce contamination of particles in a fluidized bed reactor |
| US9587993B2 (en) | 2012-11-06 | 2017-03-07 | Rec Silicon Inc | Probe assembly for a fluid bed reactor |
| KR20150082349A (ko) * | 2012-11-06 | 2015-07-15 | 알이씨 실리콘 인코포레이티드 | 유동상 반응기 내의 입자들의 오염을 감소시키는 방법 및 장치 |
| WO2014099502A1 (en) * | 2012-12-21 | 2014-06-26 | Rec Silicon Inc | High-temperature grade steel for fluidized bed reactor equipment |
| CN107364869A (zh) * | 2013-04-16 | 2017-11-21 | 江苏中能硅业科技发展有限公司 | 流化床反应器及其用于制备高纯粒状多晶硅的方法 |
| CN103449442B (zh) * | 2013-09-03 | 2015-03-18 | 浙江精功新材料技术有限公司 | 一种流化床多晶硅颗粒的制备系统及利用该系统制备多晶硅的工艺 |
| US20150104369A1 (en) * | 2013-10-11 | 2015-04-16 | Rec Silicon Inc | Polysilicon transportation device and a reactor system and method of polycrystalline silicon production therewith |
| DE102014212049A1 (de) | 2014-06-24 | 2015-12-24 | Wacker Chemie Ag | Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat |
| US9446367B2 (en) * | 2014-08-15 | 2016-09-20 | Rec Silicon Inc | Joint design for segmented silicon carbide liner in a fluidized bed reactor |
| US9238211B1 (en) * | 2014-08-15 | 2016-01-19 | Rec Silicon Inc | Segmented silicon carbide liner |
| US9662628B2 (en) | 2014-08-15 | 2017-05-30 | Rec Silicon Inc | Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor |
| DE102014221928A1 (de) * | 2014-10-28 | 2016-04-28 | Wacker Chemie Ag | Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat |
| KR20170101985A (ko) * | 2014-12-31 | 2017-09-06 | 알이씨 실리콘 인코포레이티드 | 하부 밀봉 장치를 갖는 실리콘 증착 반응기 |
| US10837106B2 (en) | 2015-05-12 | 2020-11-17 | Corner Star Limited | Clamping assembly for a reactor system |
| DE102015224120A1 (de) * | 2015-12-02 | 2017-06-08 | Wacker Chemie Ag | Wirbelschichtreaktor und Verfahren zur Herstellung von polykristallinem Siliciumgranulat |
| RU2691344C1 (ru) * | 2018-09-10 | 2019-06-11 | Вадим Георгиевич Кузьмин | Способ очистки зерен кварца и зерно кварца, полученное согласно способу |
| KR102671841B1 (ko) * | 2019-03-11 | 2024-06-04 | 한국전력공사 | 고압 유동층 시스템 및 그의 내부 압력 제어 방법 |
| US10717061B1 (en) * | 2019-06-26 | 2020-07-21 | X Energy, Llc | Fluidized bed reactor system allowing particle sampling during an ongoing reaction |
| FR3112148B1 (fr) | 2020-07-01 | 2022-07-15 | Safran Ceram | Dispositif pour le dépôt chimique en phase vapeur en lit fluidisé |
| CN115078450A (zh) * | 2021-03-11 | 2022-09-20 | 中国科学院过程工程研究所 | 一种热转化反应的分析装置及其分析方法 |
| CN113501794A (zh) * | 2021-07-28 | 2021-10-15 | 南京硕达生物科技有限公司 | 一种2-氨基-5-巯基-1,3,4-噻二唑的制备方法 |
| CN115007066A (zh) * | 2022-08-05 | 2022-09-06 | 山西阳煤化工机械（集团）有限公司 | 一种冷氢化反应器 |
| KR102712596B1 (ko) * | 2022-08-29 | 2024-09-30 | 오씨아이 주식회사 | 실리콘 마이크로 입자의 제조방법 및 이에 의해 제조된 실리콘 마이크로 입자 |
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| KR880000618B1 (ko) * | 1985-12-28 | 1988-04-18 | 재단법인 한국화학연구소 | 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법 |
| DE3839705A1 (de) * | 1987-11-25 | 1989-06-08 | Union Carbide Corp | Beheizter wirbelschichtreaktor |
| CA1332782C (en) * | 1988-03-31 | 1994-11-01 | Richard Andrew Van Slooten | Annular heated fluidized bed reactor |
| US5165908A (en) * | 1988-03-31 | 1992-11-24 | Advanced Silicon Materials, Inc. | Annular heated fluidized bed reactor |
| JPH0694367B2 (ja) * | 1990-01-19 | 1994-11-24 | 大阪チタニウム製造株式会社 | 多結晶シリコンの製造方法 |
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| US5382412A (en) * | 1992-10-16 | 1995-01-17 | Korea Research Institute Of Chemical Technology | Fluidized bed reactor heated by microwaves |
| US5810934A (en) * | 1995-06-07 | 1998-09-22 | Advanced Silicon Materials, Inc. | Silicon deposition reactor apparatus |
| EP0832312B1 (en) | 1995-06-07 | 2003-01-08 | Advanced Silicon Materials LLC | Method and apparatus for silicon deposition in a fluidized-bed reactor |
| DE19948395A1 (de) | 1999-10-06 | 2001-05-03 | Wacker Chemie Gmbh | Strahlungsbeheizter Fliessbettreaktor |
| JP2001214271A (ja) | 2000-01-31 | 2001-08-07 | Seiko Epson Corp | 成膜装置 |
| KR100411180B1 (ko) * | 2001-01-03 | 2003-12-18 | 한국화학연구원 | 다결정실리콘의 제조방법과 그 장치 |
| DE102005042753A1 (de) * | 2005-09-08 | 2007-03-15 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Herstellung von granulatförmigem polykristallinem Silicium in einem Wirbelschichtreaktor |
| KR100756310B1 (ko) * | 2006-02-07 | 2007-09-07 | 한국화학연구원 | 입자형 다결정실리콘 제조용 고압 유동층반응기 |
| KR100661284B1 (ko) * | 2006-02-14 | 2006-12-27 | 한국화학연구원 | 유동층 반응기를 이용한 다결정실리콘 제조 방법 |
| KR100783667B1 (ko) * | 2006-08-10 | 2007-12-07 | 한국화학연구원 | 입자형 다결정 실리콘의 제조방법 및 제조장치 |
-
2006
- 2006-02-07 KR KR1020060011493A patent/KR100756310B1/ko not_active Expired - Fee Related
-
2007
- 2007-02-07 WO PCT/KR2007/000657 patent/WO2007091834A1/en not_active Ceased
- 2007-02-07 RU RU2008132506/15A patent/RU2397952C2/ru not_active IP Right Cessation
- 2007-02-07 CN CN2007800044671A patent/CN101378989B/zh not_active Expired - Fee Related
- 2007-02-07 EP EP07708807.8A patent/EP1984297B1/en not_active Not-in-force
- 2007-02-07 US US12/093,513 patent/US7972562B2/en not_active Expired - Fee Related
- 2007-02-07 JP JP2008554132A patent/JP4955706B2/ja not_active Expired - Fee Related
- 2007-02-07 ES ES07708807.8T patent/ES2436770T3/es active Active
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2009
- 2009-10-30 US US12/609,364 patent/US8114352B2/en not_active Expired - Fee Related
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