JP2009256711A - プラズマ発生装置、成膜装置及び成膜方法 - Google Patents
プラズマ発生装置、成膜装置及び成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000003507 refrigerant Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 55
- 239000000758 substrate Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 19
- 238000001704 evaporation Methods 0.000 description 18
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 12
- 239000000395 magnesium oxide Substances 0.000 description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000007733 ion plating Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/3233—Discharge generated by other radiation using charged particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/061—Construction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/103—Lenses characterised by lens type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3142—Ion plating
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- Toxicology (AREA)
- Health & Medical Sciences (AREA)
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- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
【解決手段】プラズマガンから収束コイルにより引き出したプラズマビームを、プラズマビームの照射方向に対して直交する方向に延び、対向して互いに平行に配置されて対になっている第一のマグネットによって形成される磁場の中に通過させることにより、プラズマビームをシート状に変形させるプラズマ発生装置において、プラズマガンと該第一のマグネットの間に、プラズマビームの照射方向にその孔部の中心が位置しかつ照射方向の磁場を収束させる磁場を形成する、前記孔部を有する第二のマグネットを少なくとも1つ配置した。
【選択図】図1
Description
以降“LCD”と略記することがある。)やプラズマディスプレイ装置(Plasma Display Panel 以降“PDP”と略記することがある。)等、ディスプレイ用の大型基板を用いたディスプレイ装置の量産が近年強く求められている。
膜厚 :12000Å
放電圧力:0.1Pa
Ar流量:11sccm(0.18ml/sec)
O2 流量 :400sccm(6.7ml/sec)
成膜速度:175Å/sec
この結果、成膜プロセスの重要条件であるプラズマを維持するために必要なArガス流量を安定供給しながら、かつ、プラズマの放電インピーダンスを高めることを可能にしたため、プラズマガンの投入電力を増加させることなく、第二のマグネットがない場合に比べて、成膜速度を30%増加させることができた。
外経 :80(mm)
厚さ :10(mm)
保持力(H) :11750(Oe)
残留磁束密度(Br):13900(Gauss)
以上、添付図面を参照して本発明の好ましい実施形態、実施例を説明したが、本発明はかかる実施形態、実施例に限定されるものではなく、特許請求の範囲の記載から把握される技術的範囲において種々の形態に変更可能である。
11 第二のマグネット
20 プラズマガン
21 ホローカソード
22 電極マグネット
23 電極コイル
25 プラズマビーム
26 収束コイル
27 第一のマグネット
28 プラズマビーム
29 第一のマグネット
30 成膜室
31 蒸発材料
32 蒸発材料受け皿
33 基板
34 アノードマグネット
100 従来例による成膜装置
Claims (6)
- プラズマガンから収束コイルにより引き出したプラズマビームを、該プラズマビームの照射方向に対して直交する方向に延び、対向して互いに平行に配置されて対になっている第一のマグネットによって形成される磁場の中を通過させることにより、前記プラズマビームを変形させるプラズマ発生装置において、
前記プラズマガンと前記第一のマグネットの間に、前記プラズマビームの該照射方向に、その孔部の中心が位置し、かつ、該孔部内で該照射方向の磁場を収束させる磁場を形成する、前記孔部を有する第二のマグネットが少なくとも1つ配置したことを特徴とするプラズマ発生装置。 - 前記孔部を有する第二のマグネットは、同じ磁極を該孔部の中心に向けた環状の永久磁石または電磁石であることを特徴とする請求項1に記載のプラズマ発生装置。
- 前記第二のマグネットは、冷媒が流動する導電性部材で支持されていることを特徴とする請求項1又は請求項2に記載のプラズマ発生装置。
- 請求項1乃至請求項3の何れか1項に記載のプラズマ発生装置を有する成膜装置。
- 請求項4に記載の成膜装置を用いて被成膜物に膜を形成する成膜方法。
- 請求項5に記載の成膜方法において、前記膜はMgO膜であることを特徴とする成膜方法。
Priority Applications (3)
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JP2008105692A JP4660570B2 (ja) | 2008-04-15 | 2008-04-15 | 真空成膜装置及び成膜方法 |
US12/423,051 US20090255803A1 (en) | 2008-04-15 | 2009-04-14 | Plasma generating apparatus, deposition apparatus, and deposition method |
CNA2009101348887A CN101560643A (zh) | 2008-04-15 | 2009-04-15 | 等离子体产生设备、沉积设备和沉积方法 |
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JP2008105692A JP4660570B2 (ja) | 2008-04-15 | 2008-04-15 | 真空成膜装置及び成膜方法 |
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JP2009256711A true JP2009256711A (ja) | 2009-11-05 |
JP4660570B2 JP4660570B2 (ja) | 2011-03-30 |
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US (1) | US20090255803A1 (ja) |
JP (1) | JP4660570B2 (ja) |
CN (1) | CN101560643A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016149536A (ja) * | 2015-02-12 | 2016-08-18 | 煙台首鋼磁性材料株式有限公司 | Nd−Fe−B系永久磁石表面のアルミニウムめっき方法 |
JP2016149535A (ja) * | 2015-02-12 | 2016-08-18 | 煙台首鋼磁性材料株式有限公司 | 複合被膜を有するNd−Fe−B系永久磁石、及びNd−Fe−B系永久磁石表面の複合被膜形成方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009299184A (ja) * | 2008-05-12 | 2009-12-24 | Canon Anelva Corp | 磁場発生装置、磁場発生方法、スパッタ装置及びデバイスの製造方法 |
JP5580004B2 (ja) * | 2008-07-14 | 2014-08-27 | キヤノンアネルバ株式会社 | 真空容器、および真空処理装置 |
JP2010168648A (ja) * | 2008-12-25 | 2010-08-05 | Canon Anelva Corp | 成膜装置及び基板の製造方法 |
CN108645624B (zh) * | 2018-05-11 | 2020-05-08 | 北京卫星环境工程研究所 | 基于磁偏转的电推进羽流沉积效应测量装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01184273A (ja) * | 1988-01-18 | 1989-07-21 | Tobi Co Ltd | 反応性プラズマビーム製膜方法とその装置 |
JPH06349593A (ja) * | 1993-06-07 | 1994-12-22 | Sumitomo Heavy Ind Ltd | シートプラズマ生成方法及びその装置 |
JPH0978230A (ja) * | 1995-09-19 | 1997-03-25 | Chugai Ro Co Ltd | シート状プラズマ発生装置 |
JP2000017431A (ja) * | 1998-06-26 | 2000-01-18 | Dainippon Printing Co Ltd | MgO膜形成方法およびパネル |
JP2000087225A (ja) * | 1998-09-14 | 2000-03-28 | Dainippon Printing Co Ltd | 真空成膜装置 |
JP2004353012A (ja) * | 2003-05-27 | 2004-12-16 | Stanley Electric Co Ltd | 圧力勾配型プラズマ発生装置を用いた成膜装置のプラズマ拡散方法 |
JP2007119804A (ja) * | 2005-10-25 | 2007-05-17 | Canon Anelva Corp | シート状プラズマ発生装置および成膜装置 |
Family Cites Families (4)
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---|---|---|---|---|
US6799531B2 (en) * | 2001-01-17 | 2004-10-05 | Research Foundation Of The City Of University Of New York | Method for making films utilizing a pulsed laser for ion injection and deposition |
JP4416632B2 (ja) * | 2004-12-03 | 2010-02-17 | キヤノン株式会社 | ガスクラスターイオンビーム照射装置およびガスクラスターのイオン化方法 |
JP2007277708A (ja) * | 2006-03-17 | 2007-10-25 | Canon Inc | 成膜装置および成膜方法 |
JP2009299184A (ja) * | 2008-05-12 | 2009-12-24 | Canon Anelva Corp | 磁場発生装置、磁場発生方法、スパッタ装置及びデバイスの製造方法 |
-
2008
- 2008-04-15 JP JP2008105692A patent/JP4660570B2/ja active Active
-
2009
- 2009-04-14 US US12/423,051 patent/US20090255803A1/en not_active Abandoned
- 2009-04-15 CN CNA2009101348887A patent/CN101560643A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01184273A (ja) * | 1988-01-18 | 1989-07-21 | Tobi Co Ltd | 反応性プラズマビーム製膜方法とその装置 |
JPH06349593A (ja) * | 1993-06-07 | 1994-12-22 | Sumitomo Heavy Ind Ltd | シートプラズマ生成方法及びその装置 |
JPH0978230A (ja) * | 1995-09-19 | 1997-03-25 | Chugai Ro Co Ltd | シート状プラズマ発生装置 |
JP2000017431A (ja) * | 1998-06-26 | 2000-01-18 | Dainippon Printing Co Ltd | MgO膜形成方法およびパネル |
JP2000087225A (ja) * | 1998-09-14 | 2000-03-28 | Dainippon Printing Co Ltd | 真空成膜装置 |
JP2004353012A (ja) * | 2003-05-27 | 2004-12-16 | Stanley Electric Co Ltd | 圧力勾配型プラズマ発生装置を用いた成膜装置のプラズマ拡散方法 |
JP2007119804A (ja) * | 2005-10-25 | 2007-05-17 | Canon Anelva Corp | シート状プラズマ発生装置および成膜装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016149536A (ja) * | 2015-02-12 | 2016-08-18 | 煙台首鋼磁性材料株式有限公司 | Nd−Fe−B系永久磁石表面のアルミニウムめっき方法 |
JP2016149535A (ja) * | 2015-02-12 | 2016-08-18 | 煙台首鋼磁性材料株式有限公司 | 複合被膜を有するNd−Fe−B系永久磁石、及びNd−Fe−B系永久磁石表面の複合被膜形成方法 |
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CN101560643A (zh) | 2009-10-21 |
US20090255803A1 (en) | 2009-10-15 |
JP4660570B2 (ja) | 2011-03-30 |
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