JP2009188266A - 液体原料気化器及びそれを用いた成膜装置 - Google Patents

液体原料気化器及びそれを用いた成膜装置 Download PDF

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Publication number
JP2009188266A
JP2009188266A JP2008027997A JP2008027997A JP2009188266A JP 2009188266 A JP2009188266 A JP 2009188266A JP 2008027997 A JP2008027997 A JP 2008027997A JP 2008027997 A JP2008027997 A JP 2008027997A JP 2009188266 A JP2009188266 A JP 2009188266A
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JP
Japan
Prior art keywords
liquid
raw material
vaporizer
radiant heat
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008027997A
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English (en)
Japanese (ja)
Inventor
Yasuyuki Okabe
庸之 岡部
Nariyuki Okura
成幸 大倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008027997A priority Critical patent/JP2009188266A/ja
Priority to PCT/JP2008/072233 priority patent/WO2009098815A1/ja
Priority to CN2008801264743A priority patent/CN101939827B/zh
Priority to KR1020107013745A priority patent/KR101176737B1/ko
Publication of JP2009188266A publication Critical patent/JP2009188266A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008027997A 2008-02-07 2008-02-07 液体原料気化器及びそれを用いた成膜装置 Pending JP2009188266A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008027997A JP2009188266A (ja) 2008-02-07 2008-02-07 液体原料気化器及びそれを用いた成膜装置
PCT/JP2008/072233 WO2009098815A1 (ja) 2008-02-07 2008-12-08 液体原料気化器及びそれを用いた成膜装置
CN2008801264743A CN101939827B (zh) 2008-02-07 2008-12-08 液体原料气化器及使用该液体原料气化器的成膜装置
KR1020107013745A KR101176737B1 (ko) 2008-02-07 2008-12-08 액체 원료 기화기 및 이를 이용한 성막 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008027997A JP2009188266A (ja) 2008-02-07 2008-02-07 液体原料気化器及びそれを用いた成膜装置

Publications (1)

Publication Number Publication Date
JP2009188266A true JP2009188266A (ja) 2009-08-20

Family

ID=40951898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008027997A Pending JP2009188266A (ja) 2008-02-07 2008-02-07 液体原料気化器及びそれを用いた成膜装置

Country Status (4)

Country Link
JP (1) JP2009188266A (ko)
KR (1) KR101176737B1 (ko)
CN (1) CN101939827B (ko)
WO (1) WO2009098815A1 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013518990A (ja) * 2010-02-05 2013-05-23 エムエスピー コーポレーション 液体前躯体を気化するための微細液滴噴霧器
WO2013146680A1 (ja) * 2012-03-30 2013-10-03 株式会社ブイテックス 気化装置
CN111742394A (zh) * 2018-03-23 2020-10-02 株式会社国际电气 气化器、基板处理装置及半导体器件的制造方法
WO2023034443A1 (en) * 2021-09-01 2023-03-09 Entegris, Inc. Vaporizer assembly

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103422075B (zh) * 2012-05-14 2015-09-02 中芯国际集成电路制造(上海)有限公司 形成膜层的方法
CN105214568B (zh) 2014-06-10 2018-04-20 万华化学集团股份有限公司 一种加热器、该加热器的用途和应用该加热器制备异氰酸酯的方法
KR102244073B1 (ko) * 2014-09-16 2021-04-26 삼성디스플레이 주식회사 표시 장치의 제조 장치 및 이를 이용한 표시 장치의 제조 방법
JP6321767B1 (ja) * 2016-12-14 2018-05-09 日本特殊陶業株式会社 呼気センサ
KR102449994B1 (ko) * 2021-02-22 2022-10-04 (주)탑크루 배기 배관의 유해가스 가열용 히팅 모듈 및 배기 배관에 주입되는 열전달 가스 가열용 히팅 모듈

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0317271A (ja) * 1989-01-23 1991-01-25 Anelva Corp Ｃｖｄ装置
JPH06181177A (ja) * 1991-07-19 1994-06-28 Leybold Ag 液体蒸発装置
JPH10337464A (ja) * 1997-06-04 1998-12-22 Ckd Corp 液体原料の気化装置
JP2005109349A (ja) * 2003-10-01 2005-04-21 Tokyo Electron Ltd 気化器及び成膜装置
JP2007100207A (ja) * 2005-09-09 2007-04-19 Lintec Co Ltd 低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200173175Y1 (ko) * 1996-10-17 2000-03-02 김영환 액상반응원료의 기화장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0317271A (ja) * 1989-01-23 1991-01-25 Anelva Corp Ｃｖｄ装置
JPH06181177A (ja) * 1991-07-19 1994-06-28 Leybold Ag 液体蒸発装置
JPH10337464A (ja) * 1997-06-04 1998-12-22 Ckd Corp 液体原料の気化装置
JP2005109349A (ja) * 2003-10-01 2005-04-21 Tokyo Electron Ltd 気化器及び成膜装置
JP2007100207A (ja) * 2005-09-09 2007-04-19 Lintec Co Ltd 低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013518990A (ja) * 2010-02-05 2013-05-23 エムエスピー コーポレーション 液体前躯体を気化するための微細液滴噴霧器
US8986784B2 (en) 2010-02-05 2015-03-24 Msp Corporation Fine droplet atomization for liquid precursor vaporization
WO2013146680A1 (ja) * 2012-03-30 2013-10-03 株式会社ブイテックス 気化装置
JP2013208524A (ja) * 2012-03-30 2013-10-10 V Tex:Kk 気化装置
CN111742394A (zh) * 2018-03-23 2020-10-02 株式会社国际电气 气化器、基板处理装置及半导体器件的制造方法
WO2023034443A1 (en) * 2021-09-01 2023-03-09 Entegris, Inc. Vaporizer assembly

Also Published As

Publication number Publication date
KR101176737B1 (ko) 2012-08-23
WO2009098815A1 (ja) 2009-08-13
KR20100116170A (ko) 2010-10-29
CN101939827A (zh) 2011-01-05
CN101939827B (zh) 2013-01-16

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