JP2009141090A - Scanning electron microscope - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem in work such as an EBAC analysis that a probe connected to an amplifier must be touched on an analysis object lead wire to detect a current absorbed by the analysis object lead wire, requiring a worker to share a considerable load to perform the work, for example, in a point that since the probe touching object pattern must be searched and also be located at the center of an SEM display image and thereafter the probe end point must be moved to the SEM display image center, this step requires the repetition of the work that the probe is moved within the SEM display image at a lower magnification of the SEM image and the probe is then moved on the probe touching pattern while SEM observation magnification is increased. <P>SOLUTION: In the scanning electron microscope, when the analysis object location (probe touching location) in a sample is moved to the center of the sight of an image display area, the front end point of probe of prober can be automatically moved into the sight of the image display area. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a defect analysis technique in a semiconductor integrated circuit device (or semiconductor device) or a technique effective when applied to a defect analysis apparatus.

  Japanese Patent Laid-Open No. 2002-343843 (Patent Document 1) relates to an electron beam absorbed current (EBAC) analysis using two needle contacts, that is, one connected to an absorption current amplifier and the other connected to GND. In a semiconductor integrated circuit device or the like (electronic circuit device or semiconductor device) that performs EBAC analysis or connects both probes to an absorption current amplifier and performs image processing / image calculation on the absorption current image captured from each probe An analysis technique is disclosed.

  In Japanese Patent Laid-Open No. 2002-368049 (Patent Document 2), an electron beam is irradiated in a state in which one end or both ends of a wiring to be analyzed is in contact with a needle, and an absorption current flowing through one probe needle is subjected to voltage conversion amplification and an electron. A failure analysis technique in a semiconductor integrated circuit device or the like that displays an image in synchronization with beam scanning is disclosed.

  Japanese Patent Application Laid-Open No. 2004-296771 (Patent Document 3) filed for EBAC analysis using a differential amplifier: a probe connected to a differential amplifier is applied to both ends of an analysis target portion and generated by charged beam scanning. Analysis technique in a semiconductor integrated circuit device or the like for differentially amplifying the absorbed current and detecting a change in the differentially amplified signal in synchronization with scanning of the charged beam to identify a defective portion of the wiring Is disclosed.

  In Japanese Patent Application Laid-Open No. 2005-347773 (Patent Document 4), at least one probe needle (probe) is set up on a sample to be analyzed, and the current distribution flowing through the probe needle is scanned while scanning the sample with an electron beam. A failure analysis technique in a semiconductor integrated circuit device or the like that identifies a disconnection portion of a wiring by observing the circuit is disclosed.

JP 2002-343843 A JP 2002-368049 A Japanese Patent Application Laid-Open No. 2004-296771 JP 2005-347773 A

  EBAC analysis is known as an analysis method for disconnection failure and high resistance failure that has occurred in wiring in a semiconductor device. The EBAC analysis is an analysis method using the convergence, transmission, and absorption of an electron beam, that is, EB (Electron Beam). As for EB, a fine spot can be easily obtained, and it penetrates the inside of the semiconductor device through the insulating film and the upper layer wiring depending on the acceleration voltage, and the EB reaching the wiring is absorbed and becomes a current. By detecting and amplifying the absorbed current and displaying the absorbed current image in synchronization with the EB scanning, it becomes possible to specify the defective position of the wiring.

  Japanese Unexamined Patent Application Publication No. 2002-368049 (Patent Document 2) discloses an analysis example with one probe needle (probe) and an analysis example with two probes. When there is one probe needle, if the resistance value is high resistance failure or disconnection failure of several tens MΩ or more, the absorption current flows from the side farther from the amplifier with the defective part as the boundary, so there is a contrast difference. The defective position can be specified. Furthermore, when there is a single probe needle, even if there is some resistance, if it is electrically connected, it appears to react brightly. This is useful when selecting whether the content is open or short.

  When there are two probe needles, one probe needle is applied to one end of the analysis target wiring, the output is connected to the absorption current amplifier, and the other is connected to GND. When EB is scanned in this state, the absorption current generated by EB irradiation to the GND-side wiring flows into the GND and is not detected by the current amplifier on the opposite side, and is dark on the display. Is displayed. On the other hand, the absorption current generated in the absorption current amplifier side wiring rather than the high resistance defect flows into the amplifier, and thus is displayed brightly on the display. Therefore, there is a defect at this light / dark boundary.

  In Japanese Patent Laid-Open Publication No. 2002-343843 (Patent Document 1), two probes are connected to an absorption current amplifier, and image processing and image calculation are performed on the absorption current image captured from each probe. Disclosed analysis methods.

  Furthermore, in Japanese Patent Application Laid-Open No. 2004-296771 (Patent Document 3), two probe needles connected to a differential amplifier are applied to both ends of a portion to be analyzed, and an absorption current generated by charged beam scanning is differentially amplified. A method for detecting a change in the differentially amplified signal in synchronization with the scanning of the charged beam is disclosed. This makes it possible to specify a defective position having a lower resistance than the analysis using two probe needles described in Japanese Patent Laid-Open No. 2002-368049 (Patent Document 2).

  As described above, the EBAC analysis is effective for specifying the position of a high resistance failure or disconnection failure, but has the following problems.

  That is, since the EBAC analysis detects the current absorbed in the analysis target wiring, it is necessary to apply the probe needle connected to the amplifier to the analysis target wiring, which is a heavy burden on the operator.

  First, the needle contact pattern must be found from within the sample, but the SEM image can be obtained by referring to the layout image of the needle contact pad of the sample itself or a relatively large sized needle contact pad provided by FIB processing on the sample surface. It is relatively easy to find out while observing. However, it takes time even for a skilled worker to remove the upper layer wiring by mechanical polishing in advance and search for the wiring or via to be a needle contact from the exposed pattern.

  After searching for the needle contact target pattern and positioning it at the center of the SEM screen, it is necessary to move the tip of the probe needle to the center of the SEM screen. For this operation, it is necessary to repeat the work of moving the probe needle onto the needle contact pattern while increasing the SEM observation magnification by moving the probe needle into the SEM screen while reducing the magnification of the SEM image.

  Next, the probe needle tip is brought into contact. The probe needle used here is generally a metal needle such as tungsten. However, since the tip is as fine as 1 μm or less, rough needle contact is performed. The needle tip is deformed by a single contact, making it difficult to use. In addition, since the wiring and vias to be needled are fine (≦ 0.5 μm) and are made of a soft material (Cu or Al), it is necessary to make the contact more delicate than the needlebing pad provided by FIB processing. Specifically, while observing the SEM image, the probe needle lowering and tip position correction are gradually advanced while changing the observation magnification. In EBAC analysis, it is no exaggeration to say that this series of operations occupies about half of the analysis time.

  When the analysis target pattern is electrically isolated and the high resistance failure is due to a half-break, charges are accumulated in the pattern during SEM image observation for confirmation of the needle contact position and the like. When the probe needle is applied in this state, the accumulated charge flows into the probe needle all at once, so that the high-resistance defective portion in a semi-disconnected state or the tip of the thin probe needle may melt due to current concentration. Damage to the probe needle can be dealt with by replacing it, but failure of the defective part makes it impossible to confirm the content of the defect.

  Since the probe needle used for EBAC analysis has a fine tip and is brought into contact with a wiring / via / pad or the like, the tip wears / deforms according to the handling and the number of times of use of the needle as described above, and thus becomes a consumable item. When exchanging this, it is necessary to open the sample chamber to the atmosphere or to provide a dedicated exchanging means for the apparatus. When the sample chamber is opened to the atmosphere, it is necessary to consider the workability of needle replacement and the increase in analysis time due to vacuum evacuation. Further, when a dedicated exchange means is provided, the apparatus becomes large and the apparatus price increases.

  An object of the present invention is to provide a failure analysis device (for example, an EBAC analysis device or the like) such as a semiconductor integrated circuit device having excellent maintainability.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  The following is a brief description of an outline of typical inventions disclosed in the present application.

  That is, according to the present invention, when the analysis target position (needle contact position) in the sample is moved to the center of the field of view of the image display unit, the tip of the probe needle of the prober is automatically moved to the field of view of the image display unit. It is a scanning electron microscope apparatus which can move in.

  The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.

  That is, when the analysis target position (needle contact position) in the sample is moved to the center of the field of view of the image display unit, the tip of the probe needle of the prober is automatically moved within the field of view of the image display unit. Analysis time can be greatly reduced.

[Outline of Embodiment]
First, an outline of a typical embodiment of the invention disclosed in the present application will be described.

1. Scanning electron microscope apparatus including:
(A) An image display unit that displays response information from the sample on the screen in response to scanning of the electron beam;
(B) When the defect analysis position of the sample is moved to the center of the field of view of the electron optical system displayed on the image display unit, the tip of the probe needle of the prober can be automatically moved within the field of view. Stage control unit that can be used.

2. Scanning electron microscope apparatus including:
(A) a sample chamber in which a sample can be stored;
(B) provided in the sample chamber so that the charge accumulated in the sample can be removed via the probe needle when the tip of the probe needle of the prober contacts the sample in the sample chamber. Slow leak circuit.

3. Scanning electron microscope apparatus including:
(A) an electron microscope apparatus main body containing an electron optical system;
(B) a sample chamber provided in the electron microscope apparatus body and capable of accommodating a sample;
(C) a prober provided in the sample chamber and to which a probe needle can be attached;
(D) a preamplifier unit provided in the sample chamber and capable of amplifying response information from the sample provided via the probe needle in response to scanning of an electron beam;
Here, the sample chamber can be drawn out from the main body of the electron microscope apparatus to the atmosphere.

4). Scanning electron microscope apparatus including:
(A) An image display unit that displays response information from the sample on the screen in response to scanning of the electron beam;
(B) a prober capable of applying a plurality of probe needles to the sample;
(C) a stage control unit capable of rotating the sample in a plane including its main surface;
(D) a prober control unit capable of controlling the prober;
Here, the image display unit can be rotated corresponding to the rotation of the sample, and the prober control unit can interchange the operations of the plurality of probe needles in response to the rotation. Has been.

5). Scanning electron microscope apparatus including:
(A) a sample chamber in which a sample can be stored;
(B) a prober provided in the sample chamber and capable of applying a probe needle to the sample;
(C) Landing the tip of the probe needle on the main surface of the sample by lowering the tip of the probe needle toward the main surface of the sample by a combination of rough descent and fine descent Prober control unit,
Here, the prober control unit corrects a positional deviation in a plane parallel to the main surface of the sample of the tip of the probe needle before and after the rough descent after the rough descent. Have been able to.

[Description format, basic terms, usage in this application]
1. In the present application, the description of the embodiment may be divided into a plurality of sections for convenience, if necessary. However, unless otherwise specified, these are not independent from each other. Each part of a single example, one part is the other part of the details, or part or all of the modifications. Moreover, as a general rule, the same part is not repeated. In addition, each component in the embodiment is not indispensable unless specifically stated otherwise, unless it is theoretically limited to the number, and obviously not in context.

  2. Similarly, in the description of the embodiment, etc., regarding the material, composition, etc., “X consisting of A” etc. is an element other than A unless specifically stated otherwise and clearly not in context. It is not excluded that one of the main components. For example, as for the component, it means “X containing A as a main component”. For example, “silicon member” is not limited to pure silicon, but also includes SiGe alloys, other multi-component alloys containing silicon as a main component, and members containing other additives. Needless to say.

  3. Similarly, suitable examples of graphics, positions, attributes, and the like are given, but it is needless to say that the present invention is not strictly limited to those cases unless explicitly stated otherwise, and unless otherwise apparent from the context.

  4). In addition, when a specific number or quantity is mentioned, a numerical value exceeding that specific number will be used unless specifically stated otherwise, unless theoretically limited to that number, or unless otherwise clearly indicated by the context. There may be a numerical value less than the specific numerical value.

  5). “Wafer” usually refers to a single crystal silicon wafer or the like on which a semiconductor integrated circuit device (same as a semiconductor device or an electronic device) is formed, but an epitaxial wafer, an SOI substrate, an insulating substrate, a semiconductor layer, etc. Needless to say, composite wafers are also included.

  6). In the case of a “scanning electron microscope device”, that is, SEM (Scanning Electron Microscope), a sample is generally excited by scanning an electron beam (convergent electron beam) on the sample, and is emitted in response to the scanning. A device that analyzes the state of a sample by imaging secondary electron information (response signal or response information). In general, a scanning electron microscope apparatus can use an electromagnetic wave beam such as light and a particle beam such as an ion in addition to an electron beam as an energy beam for excitation. Furthermore, not only secondary electrons but also other energy beam information such as electrons, ions, light, heat, X-rays, gamma rays, potential distribution, various currents detected from the sample, etc. as response information Some have Accordingly, the “scanning electron microscope apparatus” is not limited to having a SEM function as a main function, but also includes a SEM function as a secondary function.

[Details of the embodiment]
The embodiment will be further described in detail. In the drawings, the same or similar parts are denoted by the same or similar symbols or reference numerals, and description thereof will not be repeated in principle.

1. Description of Main Functions and Application Fields of Scanning Electron Microscope Apparatus of the Present Embodiment The scanning electron microscope apparatus such as the EBAC analysis apparatus of the present embodiment has the following functions.
(1) Simplification of probe needle contact work Using the sample layout data and stage coordinates, the coordinate system is locked by 2-point or 3-point alignment, and the layout data of the defective net specified by software analysis is captured. . Based on these, after the sample is positioned and the probe needle is called in, the needle is applied using the automatic needle application function and the probe needle contact detection function.
(2) Prevention of destruction of probe needle tip and defective part due to electrification A slow leak circuit is provided for gradually escaping the charge accumulated in the pattern (GND connection via high resistance), and the probe needle is the target pattern for needle contact. Connect the probe needle to the slow leak circuit until it touches. After the needle contact, the connection destination of the probe needle is switched to the EBAC amplifier by the switching circuit.
(3) Simplification of probe needle replacement and sample replacement A part of the sample chamber can be pulled out to the atmosphere, and a sample holder, prober, stage, and amplifier are mounted on the part.

  As described in (1) above, troublesome work is simplified by moving the defective net and probe needle specified in the software analysis into the SEM field of view, and automatic needle contact and probe needle contact detection. Is greatly reduced.

  Furthermore, since the sample and the probe needle can be exchanged simultaneously as in (2), the apparatus can be reduced in size and cost. Also, since the stage and the amplifier can be pulled out, the maintenance of them becomes easy.

  The main technical field of application of the EBAC analysis apparatus and the like of the embodiment of the present application is failure analysis of the wiring system. The object of application is general semiconductor devices and can be applied to any form such as a wafer, a chip, and a package product. In addition, it is applicable to various module substrates. However, in the case of a module substrate, since the film thickness of each layer is larger than that of the semiconductor device, it is necessary to increase the acceleration voltage accordingly. In addition to the above-described failure analysis, the probe needle may be replaced with a small knife or tweezers and applied to extraction or observation of living tissue. At that time, the probe needle calling function and the needle contact function can be effectively utilized.

2. Description of the overall configuration of a scanning electron microscope apparatus according to an embodiment of the present application (mainly FIGS. 1 and 2)
The configuration of the EBAC analysis apparatus according to the present invention is shown in FIGS. First, each component is demonstrated based on FIG.1 and FIG.2. As shown in FIG. 1 or 2, the EB optical system 51 irradiates and scans the sample 1 with EB (electron beam). The EB control unit 74 controls the acceleration voltage, beam current, scanning area, scanning speed, and the like. Any electron gun can be used as long as the beam current applied to the sample 1 is several tens of pA or more. A thermal electron gun using a tungsten hairpin or lanthanum hexaboride, a Schottky electron gun, There are field emission electron guns. The gun valve 52 is a valve that partitions between the EB optical system 51 and the sample chamber 85, and since the atmosphere does not enter the EB optical system 51 even if the sample chamber 85 is opened to the atmosphere by closing this valve, the sample There is no need to turn off the EB power whenever the chamber 85 is opened to the atmosphere. A secondary electron detector 49, that is, an SED (Secondary Electron Detector) detects secondary electrons emitted from the sample surface by EB irradiation. The detection signal is taken into the EB image acquisition unit 75 and displayed as an SEM image via the image processing unit 71 in synchronization with the EB scanning. The gas nozzle 53 supplies a CVD (Chemical Vapor Deposition) gas used for marking a defective portion. At the time of marking, the gas nozzle controller 68 extends the nozzle 53 by the driving mechanism and supplies the CVD gas. The gas to be used will be described later. Two or more probers 55 are installed on the base stage 58, and the prober controller 76 applies probe needles to the sample 1. Coarse / fine movement is possible in the XYZ directions. The coarse movement uses a motor drive mechanism and the fine movement uses a piezo drive mechanism. The amount of movement and the origin position can be detected. The preamplifier unit 56 is installed on the base stage 58 for each prober 55, and has a preamplifier, a slow leak circuit, and a switching means therefor. The EBAC amplifier controller 78 switches between the preamplifier and the slow leak circuit. Details are described separately. The main amplifier unit 82 includes an amplifier that amplifies the output from one preamplifier, a differential amplifier that differentially amplifies the output from the two preamplifiers, and a switching unit thereof. Amplifier switching is performed by the EBAC amplifier controller 78. The amplified signal is taken into the EBAC image acquisition unit 77 and displayed as an EBAC image via the image display unit 71 in synchronization with EB scanning. Details are described separately. The sample stage 57 is equipped with a sample holder 54 and can be moved in the XY direction and rotation (θ direction) by the stage control unit 79, and the origin position can be detected. The base stage 58 is mounted with the prober 55, the preamplifier unit 56, and the sample holder 54, and can be moved in the X and Y directions by the stage control unit 79. The amount of movement can be detected, and the origin position can be detected.

  The base 86 is fixed to the sample chamber front door 63 and has a base stage 58 mounted thereon. When the sample chamber front door 63 is closed by the holding mechanism 81, the base 86 is mechanically held and fixed. The front door 63 is a component of the sample chamber 85 and is held by a slide mechanism (not shown). When the sample 1 and the probe needle 83 are exchanged, they are pulled out as shown in FIG. The sample chamber 85 is installed on a frame 61 provided with a vibration isolation mechanism 62, and the front door 63 includes the stage 58 and the like as described above. A vacuum atmosphere is obtained by exhausting the vacuum pump. The gantry 61 includes an anti-vibration mechanism 62 that prevents vibration from the floor, and includes a vacuum pump 64 and valves 65 and 66 for evacuating and opening the sample chamber 85 to the atmosphere. The exhaust control unit 67 is a control means for evacuating and opening the sample chamber 85 to the atmosphere. When the vacuum is exhausted, the valve 65 is opened, and when the atmosphere is released, the valve 65 is closed and the valve 66 is opened to open air or inert. Gas is introduced until the front door 63 opens. The prober control unit 76 controls the movement amount / movement speed of the prober 55 in accordance with a command from the data processing unit 72. Details will be described later. The layout data acquisition unit 73 captures necessary data from a workstation or the like storing the layout data and sample structure data of the sample 1. The data processing unit 72 includes an image processing function based on control data from the EB control unit 74 and an EB image acquisition unit 75, and image data from the EBAC image acquisition unit 77, a layout data acquisition unit 73 and a prober control unit 76, and a stage control unit 79. Has a coordinate conversion function based on each coordinate data from and a function for transmitting a control command to each control unit. The image display unit 71 has a function of displaying image data and various numerical data obtained by processing the acquired images (SEM image, EBAC image, layout image) obtained by the image acquisition units 73, 75, and 77 by the data processing unit 72. .

At the time of sample replacement or probe needle replacement, as shown in FIG. 2, the front door 63 of the sample chamber 85 is slid to expose the prober 55 and the sample holder 54. The procedure to reach the illustrated state is as follows.
(1) The gas nozzle 53 is retracted.
(2) Return the origins of the stages 57 and 58 and the prober 55.
(3) Close the gun valve 52 (if the device does not have a gun valve, turn off the EB power here).
(4) Close the valve 65.
(5) The holding mechanism 81 of the base 86 is opened.
(6) The valve 66 is opened to introduce air or inert gas into the sample chamber 85.
(7) When the inside of the sample chamber 85 reaches atmospheric pressure or the front door 63 is opened, the valve 66 is closed.
(8) After pulling out the front door 63, the sample holder 54 is removed from the sample stage 57 and the sample 1 is replaced. Alternatively, the probe needle 83 is replaced.

After completing the sample exchange / probe needle exchange, proceed as follows.
(1) Close the front door 63.
(2) The valve 65 is opened to evacuate the sample chamber 85.
(3) The base 86 is held and fixed by the holding mechanism 81.
(4) When the inside of the sample chamber 85 reaches a predetermined degree of vacuum, the gun valve 52 is opened (if the apparatus does not have a gumbal valve 52, the EB power supply is turned on here).
(5) Irradiate EB and start analysis.

3. Description of the needle contact operation of the scanning electron microscope apparatus according to the embodiment of the present application (mainly FIGS. 3 to 7)
FIG. 3 shows details of the stages 57 and 58 and the prober 55 shown in FIGS. 1 and 2, and describes EBAC analysis only with the sample stage 57.

  FIG. 3A shows a state where the base stage 58, the sample stage 57, and the prober 55 are all at the origin position. The origin position of the prober 55 is a position where the probe needle 83 is farthest from the sample 1 in the XYZ directions. By pulling out the front door 63 in this state, the sample 1 and the probe needle 83 do not interfere with each other, and there is no object blocking the upper part, so that it can be easily replaced. When the front door 63 is closed, the sample center position and the SEM visual field center 91 (that is, the EB optical axis center) substantially coincide. After the probe needle replacement, the distance (Lx, Ly) between the SEM visual field center 91 and the tip of each probe needle at the origin position is known. That is, after the probe needle replacement, the amount of movement or the number of movement pulses from the prober origin position to the SEM visual field center 91 from the prober origin position is examined. In this configuration, the probers 55 are arranged in four directions, but two probers may be provided. Further, when the prober movable range is large enough to cover the entire sample, it is not necessary to provide the sample stage 57 with means for moving in the X and Y directions. By these, the apparatus can be further miniaturized, but on the other hand, the amount of the prober 55 is reduced, so that the frequency of opening the sample chamber to the atmosphere for replacing the probe needle is increased. Also, applications other than EBAC analysis are limited.

  FIG. 3B shows a process of aligning the failure analysis position within the SEM visual field. The sample 1 is moved, and the defect analysis position 89 is aligned with the center of the SEM visual field. At this time, if the operator is not in a state where the defect analysis position 89 can be easily found from the SEM image (eg, a needle pad is formed by FIB), two or three points are used using the layout data of the sample 1 and the sample stage coordinates. Coordinate system lock by point alignment is performed first. Next, the coordinates of the defect analysis position 89 in the layout data are designated, the stage is moved based on the coordinate conversion, and the defect analysis position 89 is aligned with the center of the SEM visual field.

  FIG. 3C shows a prober call-in and needle contact process to the failure analysis position 89. After the above process, the prober is designated and a prober calling operation is instructed. The designated prober 55 moves the distance (Lx, Ly). By this operation, the probe needle tip is positioned at the center of the SEM visual field. Thereafter, after adjusting the tip of the probe needle to be directly above the target pattern, the probe needle 83 is lowered and applied. In calling the prober, the prober 83 is moved along its central axis, and the luminance change of the whole or a part of the SEM visual field is monitored, and when the luminance change of a predetermined value or more occurs, it is determined that the prober has reached the prober 55 May be stopped. This eliminates the need to know in advance the distance (Lx, Ly) between the SEM visual field center 91 and the tip of each probe needle. After the probe needle contact, EBAC analysis is performed by switching from the SEM image to the EBAC image.

  FIG. 3D shows an EB irradiation current confirmation process in the EBAC analysis. The Faraday cup 88 is provided in the sample holder 54 and is connected to an electrode penetrating the sample holder 54. A sample holder 54 is fitted in the sample stage 57, and an electrode is provided at a position facing the electrode of the Faraday cup 88. A wiring (not shown) is provided from the electrode to a connector (not shown) provided on the front door 63 of the sample chamber, and is connected to a microammeter. When the contrast of the EBAC image is low, the EB irradiation current may be confirmed and adjusted. In that case, the EB irradiation current can be confirmed by moving the base stage 58 with the needle applied and positioning the Faraday cup 88 at the center of the SEM visual field. Conversely, after confirming / adjusting the EB irradiation current in this step, the base stage 58 may be returned to the origin position and the defect analysis position may be set within the SEM visual field.

  Based on FIG. 4, an EBAC analysis using only the base stage 58 will be described. In the example using only the sample stage of FIG. 3, there is one needle contact, but in this example, two or more needle contacts are possible.

  FIG. 4A shows a process of aligning the first needle contact position 94 within the SEM field of view. Here, the base stage 58, the sample stage 57, and the probers 55a and 55b in FIG. 4A are all in the origin position state, and the coordinate system lock and SEM by the two-point or three-point alignment using the layout data and the base stage coordinates. It is assumed that the distance (Lx, Ly) measurement between the visual field center 91 and the tip of each probe needle at the origin position has already been performed. The coordinates of the first needle contact position 94 in the layout data are designated, the stage is moved based on the coordinate conversion, the first needle contact position 94 is aligned with the central portion 91 of the SEM visual field, and the stage movement amount from the origin position (Sx1, Sy1) is stored.

  FIG. 4 (b) shows the prober calling to the first needle contact position 94 and the needle contact process. A prober calling operation is instructed by specifying the prober 55a. The designated prober 55a moves according to the movement amount obtained from the distance (Lx, Ly) and the base stage movement amount (Sx1, Sy1). By this operation, the probe needle tip is positioned at the SEM visual field center portion 91. Thereafter, after adjusting the tip of the probe needle to be directly above the target pattern, the probe needle 83 is lowered and applied.

  FIG. 4C shows a step of adjusting the second needle contact position within the SEM visual field. As in FIG. 4A, the coordinates of the second needle contact position 95 in the layout data are designated, the stage is moved based on the coordinate conversion, and the second needle contact position 95 is aligned with the central portion 91 of the SEM visual field. Stores the amount of stage movement (Sx2, Sy2) from the home position.

  FIG. 4D shows the prober calling to the second needle contact position 95 and the needle contact process. Similarly to FIG. 4B, the prober 55b is designated to instruct the prober calling operation. The designated prober 55b moves according to the movement amount obtained from the distance (Lx, Ly) and the base stage movement amount (Sx2, Sy2). By this operation, the probe needle tip is positioned at the SEM visual field center portion 91. Thereafter, after adjusting the tip of the probe needle to be directly above the target pattern, the probe needle 83 is lowered and applied. If the third and fourth needle contacts are to be performed, the above operation is repeated.

Next, a needle contact operation in prober control will be described with reference to FIG. The operator calls the probe needle into the SEM visual field in the above process, and then, by observing the SEM image and adjusting the prober position, the tip of the probe needle is positioned immediately above the pattern to be touched by the needle, and the needle is transferred from the data processing unit 72 to the prober control unit 76. Issue a guess command. The prober control unit 76 automatically performs the following steps.
(1) FIG. 5A: The probe needle 83 is moved to the needle contact position in FIG. 3 and FIG.
(2) FIG. 5B: The probe needle 83 is lowered at a high speed (rough descent) by the coarse movement mechanism in accordance with the coarse movement area LC previously set in the prober control section 76.
(3) FIG. 5C: The probe needle 83 is lowered at low speed (fine descent) by the piezo drive mechanism.
(4) FIG. 5 (d): If contact is not obtained even when the full stroke SF of the piezo drive mechanism is lowered, the full stroke SF of the piezo drive is returned at high speed.
(5) FIG. 5 (e): The coarse motion Sc for one step that has been previously set in the prober controller 76 is lowered at a high speed by the coarse motion mechanism.
(6) FIG. 5F: The probe needle 83 is again lowered at a low speed by the piezo drive mechanism.

  In this way, the processes in and after FIG. 5D are repeated until a contact is obtained (ascending by high-speed piezo drive, high-speed descent by one step by the coarse movement mechanism, and descent by low-speed piezo drive). The operator monitors the tip of the probe needle with the SEM image, determines that the probe needle 83 is displaced substantially in the direction of the tip, and makes a needle contact stop command from the data processing unit 72 to the prober control unit 76. In the above configuration, the coarse motion region LC is obtained from the difference between the SEM image focal positions of the probe needle tip and the sample surface at the prober Z-axis origin. Alternatively, an infrared microscope is provided on the side of the sample chamber, and the distance is obtained from the distance between the probe needle tip and the sample surface. The coarse motion Sc for one step by the coarse motion mechanism is set based on the full stroke SF of the piezo drive mechanism (Sc <SF).

  The example of FIG. 6 is a correction method when the tip of the probe needle is displaced in the XY direction from the position before the descent in the probe needle descent in the coarse movement shown in FIG. Executed after descent by mechanism). After calling the probe needle tip into the SEM visual field by calling the prober, the probe needle tip is aligned directly above the target pattern (here, a pad formed by FIB processing). After the probe needle tip alignment, an image processing window is set on the screen as shown in FIG. 6A on the SEM screen. The image processing window is composed of four regions from region A to region D, and the window center is aligned with the probe needle tip. When a needle contact button provided in the data processing unit 72 is pressed, the data processing unit 72 takes in the luminance of each area of the image processing window via the EB image acquisition unit 75 and stores the data. Thereafter, a needle contact start command is issued to the prober controller 76. After receiving the needle contact start command, the prober control unit 76 lowers the probe needle 83 at a high speed by the coarse movement mechanism in accordance with the coarse movement area LC set as shown in FIG. Send a command. The data processing unit 72 captures the brightness of each area of the image processing window and compares it with the stored data, compares the brightness change of the area adjacent to the XY direction, and the tip of the probe needle shifts from the reduced area to the increased area. It is determined that Then, the prober 55 is moved by the coarse movement mechanism in the direction from the luminance increasing region to the decreasing region, and the luminance of each region is captured. When the brightness returns to a level equivalent to that before the movement, the movement is stopped and the correction is completed. It should be noted that this positional deviation correction need not be performed at all during the descent by the coarse movement mechanism if the amount of positional deviation in a short section is small, and only needs to be performed after moving the first coarse movement area LC. Subsequently, needle contact detection may be performed using this image processing window.

  An application example of the positional deviation detection technique described in FIG. 6 will be described with reference to FIG. FIG. 6A shows a state after the positional deviation correction after the descent by the coarse movement mechanism shown in FIG. After determining the completion of the positional deviation correction, the image processing window is switched to luminance detection at the time of fine movement descent by driving the piezo element. Then, a change in luminance in each area is monitored, and as shown in FIG. 7B, a point in time when any area reaches a preset threshold value (here, area B is the first) is determined as contact. And stop the descent.

4). Description of preamplifier unit and the like of scanning electron microscope apparatus according to one embodiment of the present application (mainly FIGS. 8 to 11)
Next, the preamplifier unit will be described with reference to FIGS. FIG. 8A shows a basic configuration of the first specific example. This unit includes a preamplifier 98 for amplifying the absorption current obtained through the probe needle 83, a high resistance connected to GND for slow leaking the accumulated charge of the analysis target pattern, and an EBAC amplifier control unit. And a relay 97 that is switched by a signal from 78. Then, these are covered with a metal such as permalloy, the probe needle 83 to the connector 87 of the sample chamber front door 63 via the preamplifier 98 are connected by a coaxial cable, and the outer cable (external shield line) is GND connected. Thus, the influence of noise can be reduced. The prober control unit 76 controls the relay 97. First, needle contact is performed on the analysis target pattern with the probe needle 83 connected to the high resistance side. As a result, since the charge accumulated in the SEM observation from the alignment to the needle contact flows to the GND over time, damage to the probe needle tip and the defective part in the half-broken state can be prevented.

  Specific example 2 in FIG. 8B is obtained by adding relay 97b and connector 87b to relay 97a and connector 87a having the above-described configuration. As a result, various measuring instruments can be connected to the connector 87b, and not only EBAC analysis but also ROM characteristic evaluation and V-I characteristic evaluation such as resistance can be performed. In addition, by connecting a power source or GND, it is possible to perform failure analysis by a VC (Voltage Contrast) method at an arbitrary location.

  In the specific example 3 of FIG. 9, since the resistance value of the high resistance shown in FIG. 8 is fixed, the slow leak effect may be small for a large area pattern with a large amount of charge accumulation depending on the resistance value. . Therefore, the high resistance is switched between a variable resistance as shown in FIG. 9A or a fixed resistance as shown in FIG. 9B, and the resistance value is changed according to the size of the analysis target pattern. The resistance value ranges from 1 MΩ to 10 GΩ. Here, as a method for obtaining the size of the analysis target pattern, the entire analysis target pattern is displayed on the SEM screen as shown in FIG. At this time, if the entire analysis target pattern is almost full of the screen, the visual field size at the observation magnification at that time is regarded as the entire pattern size. If the entire analysis target pattern is small relative to the display screen, drag the area that includes the target pattern, and (the number of pixels specified by dragging ÷ the total number of pixels on the entire display screen) x field size at the observation magnification. Find the size.

  10 is different from the specific example shown in FIGS. 8 and 9 in that the slow leak switching circuits 97 and 99 using a high resistance are installed, while the voltage variable power source is connected between the relay 97 and the GND. It is equipped with. When the needle is applied, first, the relay 97 is switched to the GND side to apply a voltage to the probe needle 83. The applied voltage at this time is set to such an extent that the tip of the probe needle and the defective portion are not damaged (≦ −10 V). The probe needle 83 is lowered while a voltage is applied to the probe needle 83. When the probe needle 83 comes into contact with the pattern to be analyzed, the drop is stopped and the applied voltage is gradually lowered to 0V. As a result, the charge accumulated in the analysis target pattern gradually flows to the GND, so that the tip of the probe needle and the defective portion are not damaged.

  Next, the main amplifier unit will be described. As shown in FIG. 11, the main amplifier unit 111 includes a differential amplifier having an offset adjustment function, a post amplifier having a gain adjustment function, and a relay 97 for switching an amplifier. A selection switching means may be provided between the preamplifier unit 56 provided in each prober 55 and the main amplifier unit 111 so that the prober 55 connected to the differential amplifier / postamplifier can be switched and selected. In addition, as in the preamplifier unit 56, it is placed in a metal case, and a coaxial cable is used as a cable connecting the two amplifier units, thereby reducing the influence of noise from the periphery.

5). Description of specific examples of EBAC analysis using scanning electron microscope apparatus according to one embodiment of the present application (mainly FIG. 8, FIG. 9, FIG. 11, FIG. 12, and FIG. 13)
As shown in FIG. 11A, when the disconnection failure portion of the analysis analysis target pattern is specified only by the post-amplifier, the analysis can be performed with one probe needle. At that time, the output of the preamplifier unit 56 is connected to the postamplifier without passing through the differential amplifier.

  On the other hand, when specifying a high resistance defect location of several tens of MΩ or less, analysis is performed with two probe needles. At this time, one probe needle is connected to the post amplifier via the preamplifier unit 56 in the same manner as described above. The other probe needle can be analyzed by connecting to the connector 87b shown in FIG. 8B and connecting GND. Alternatively, a bypass (resistance value≈0Ω) is provided in the fixed resistor group of the preamplifier unit shown in FIG. 9B, and the other probe needle 83 is connected to GND via this bypass. Analysis becomes possible.

  Analysis with a differential amplifier is effective when analyzing high resistance defects of 1 MΩ or less or short-circuit defects between nets. In this case, two preamplifier unit outputs are connected to the differential amplifier as shown in FIG. Then, the difference is amplified by a post-amplifier and output. The output of the main amplifier unit 111 is sent from the EBAC image acquisition unit 77 to the data processing unit 72 as EBAC image data. The data processing unit 72 displays the layout image (FIG. 12A) that matches the observation magnification and coordinates of the EBAC image (FIG. 12B) side by side as shown in FIG. The layout image (FIG. 12 (a)) and the EBAC image (FIG. 12 (b)) are compared, and a place where the bright reaction of the net 115 is interrupted (defective position 116) is searched. When the defective position 116 is designated on the EBAC image, layout coordinates are calculated and stored from the observation magnification and the pixel position. At this time, if the defective position 116 is designated at a low magnification, the position accuracy is poor and extra time is required for physical analysis. Therefore, this is performed after increasing the observation magnification.

  As shown in FIG. 12, after capturing the coordinates, marking 117 is performed on the defective position 116 for facilitating physical analysis. The gas nozzle controller 68 extends the gas nozzle 53 to a predetermined position, opens the valve, and supplies the CVD gas to the defective position 116. Next, EB irradiation according to the marking shape is performed by the EB control means. As a result, a mark 117 that can be easily identified by an optical microscope, SEM, or FIB is formed at the defective position on the surface of the sample. Therefore, the defective position can be found even if there is no coordinate of the defective position during physical analysis. The CVD gas used here includes metal carbonyl compounds such as Cr (CO) 6, Mo (CO) 6, and W (CO) 6, dimethylgold acetylacetonate, dimethylgold trifluoroacetylacetonate, and dimethylgold hexafluoroacetyl. Gold (Au) acetylacetonate compound called acetonate, copper (Cu) acetylacetonate compound such as cyclooctadiene copper hexafluoroacetylacetonate and copper hexafluoroacetylacetonate / trimethylvinylsilane, cyclopentadiene There are cyclopentadienyl compounds such as Cu and platinum (Pt) such as enyl copper trimethylphosphine and methylcyclopentadienyl trimethyl platinum. Although the markings in FIG. 12 are formed in the cross direction with the defective position as the center, the marking is not limited to this, and the marking may be formed in a dot shape or a rectangle immediately above the defective position.

  In FIG. 13, an EBIC (Electron Beam Induced Current) reaction 118 can be seen at the output end of the net 115. This is a result of EB reaching the diffusion layer below the wiring layer and generating electron-hole pairs. Using this reaction, it is possible to identify the net of the short defective partner. FIG. 13 shows an example of this, and EBAC is applied to a net (first net) 115a that is estimated to have a disconnection or a high resistance defect somewhere in the net as shown in FIG. 12 by software analysis. As a result of analysis, an unexpected net (second net) 115b was found. The EBAC observation magnification is increased, and the EBIC reaction point (the first EBIC reaction 118 and the second EBIC reaction 121b in FIG. 12) at the second net output end is clicked. The processing device calculates layout coordinates from the clicked pixel position and observation magnification, and causes the workstation or the like storing the layout data to extract the target net. At this time, an error occurs in the calculated layout coordinates due to the effects of the stage accuracy and alignment accuracy on the EBAC apparatus side, so that the range is extracted (ex. ± 1 μm). A net 115x having an output end in the designated area 119 is displayed on the layout display screen. The operator can identify the corresponding net 115x by collating with the EBAC image. Note that a plurality of extracted nets may be sequentially superimposed on the EBAC image.

6). Supplementary explanation of sections 1 to 5 (mainly FIGS. 1 to 13)
As shown in FIG. 6 or FIG. 7, the probe needle 83 that directly touches the fine pattern has a very small tip radius of several hundreds of nanometers or less. The probe needle may also be replaced. In addition, when analyzing a plurality of locations in one sample, the probe needle 83 may be replaced in the middle. Therefore, it is conceivable to provide a probe needle replacement means in the sample chamber 85 (FIG. 1), but the apparatus becomes complicated and large. On the other hand, in the apparatus according to the present embodiment, since four probers 55 are provided and the amplifiers 56 are provided respectively, the frequency of needle replacement is 1/2 to 1/4 (the needle contact for EBAC analysis is 1 to 1). 2 places / analysis). Further, as shown in FIG. 2, in addition to enabling the sample holder 54 and the prober 55 to be pulled out, the EB optical system 51 is sealed by the gun valve 52 (not essential), whereby the sample 1 and the probe needle 83 are Since replacement can be performed at once and in a short time, it is not necessary to provide the sample replacement chamber and the probe needle replacement means described in Japanese Patent Laid-Open No. 2002-368049 (Patent Document 2) (you may provide them) The size of the apparatus can be easily reduced. Further, since the stages 57 and 58 and the amplifier 56 can be pulled out, the maintenance thereof is facilitated. As shown in FIG. 3 and FIG. 4, by providing a prober 55 (probe needle 83) calling function, the operator only has to issue a probe needle calling command and change the magnification one by one as in the prior art. However, the operation of moving the prober 55 while observing the SEM image and confirming the probe needle position is eliminated. As shown in FIG. 5, the probe abutting operation of the probe needle 83 which is easily deformed is automated, and the operator only has to monitor the displacement of the probe needle tip at the time of contact. Is greatly reduced. Furthermore, the position shift when the probe needle is lowered is automatically corrected in FIG. 6, and the contact of the tip of the probe needle can be automatically detected in FIG. 7, thereby further reducing the burden on the operator. In addition, since the contact state is controlled to be substantially constant, the deformation amount of the probe needle tip can be suppressed, and the replacement frequency of the probe needle 83 can be reduced. The connection destination of the probe needle 83 can be switched between the preamplifier 56 and the slow leak circuit as shown in FIGS. 8 to 10, and the electric charge accumulated in the SEM observation at the time of the needle contact is slowly supplied from the probe needle 83 through the high resistance Since it flows to GND, it is possible to prevent damage to the probe needle tip and a defective portion in a half-broken state. Further, various measuring instruments can be connected by switching to an external terminal (for example, 87b in FIG. 8B), and analysis other than EBAC analysis is also possible.

  Furthermore, as described in FIGS. 12 and 13, since it is possible to easily identify the coordinates of the defective position and the short defective partner net from the EBAC image, the burden on the operator and the analysis time can be greatly reduced.

7). Explanation of how to improve the operability of the probing unit (mainly Fig. 14)
As shown in FIG. 14, a prober 55 (needle contact area 132 larger than the wafer 4) that can be applied to the entire area of a large-sized sample such as a large-diameter wafer 4 is an EB optical system (objective lens). Realization is difficult due to the restriction from the working distance 51 (FIG. 1) and the size of the sample chamber 85. Accordingly, the defective chip 3 and the like can be analyzed, but the chip outside the prober needle contact area 132 cannot be analyzed. The example shown in FIG. 14 is one solution. In this example, the sample stage 57 in FIG. 1 is not provided, the base stage 58 is composed of at least the XY stage and the θ stage 131, the large diameter wafer 4 is mounted on the θ stage 131 provided on the XY stage, and the prober needle For the tip outside the contact area 132, the needle contact is made possible by rotating the θ stage 131 by 180 °. As a result, the SEM image is inverted as shown in FIG. 14C, and the operator needs to perform a needle contact operation in consideration of the image inversion (FIGS. 14B and 14C). Therefore, as shown in FIG. 14 (d), the SEM image is inverted, and coordinate conversion of the XY stage is performed in consideration of the θ stage rotation. Further, as shown in FIG. 14E, the prober operation system 133 is replaced and the coordinate conversion of the prober is performed. By these processes, the operator can operate with the same image as before the sample (wafer) inversion, so that no extra burden is generated. In this example, the large-diameter wafer is rotated 180 ° on the θ stage 131, but the large-diameter wafer 4 may be analyzed 1/4 by rotating every 90 °. In that case, since the probe contact area of the prober only needs to be (for one chip in the 1/4 + XY direction of the large-diameter wafer), the apparatus can be further miniaturized. As described above, by converting the coordinates of the stage and prober and replacing the prober operation system, the operator can collate with the layout data without being aware of the rotation of the sample. In addition, since the movable range of the high-accuracy XY stage does not need to be larger than that of a large-diameter wafer and the sample chamber 85 can be made small, the apparatus price can be suppressed.

8). Explanation of application examples of marking (mainly Fig. 15)
In the example of FIG. 15, marking formation at a defective portion is applied to a needle pad for EBAC analysis. As described in the above example, the EBAC analysis needs to be applied to the target pattern. However, when needle contact is applied to fine wiring and vias with low mechanical strength, it is necessary to pay close attention not to scratch the probe needle 83 to cause disconnection or the like. The probe needle 83 has a cylindrical shape with a root of about 0.2 mm, and a tip of about 1 mm is thinned like a needle. However, the dimension of the target wiring is about 0.13 micrometers in the lower layer and about 0.4 micrometers in the upper layer. Therefore, the dimension of the tip (vertex) of the probe needle and the dimension of the target wiring are approximately the same, and the needle contact may be extremely difficult.

  Hereinafter, it demonstrates according to a procedure.

  Procedure 1: The probe needle 83 is brought into contact with the vicinity of the analysis target pattern 141.

  Procedure 2: A region including a part of the analysis target pattern 141 and the tip of the probe needle is set as the film formation region 142.

  Procedure 3: EB is irradiated and scanned to the film-forming area | region 142, spraying CVD gas from a gas nozzle.

  Procedure 4: The CVD gas is decomposed by the energy of EB, and a conductive film 143 is formed in the film formation region 142.

  Procedure 5: The analysis target pattern 141 and the probe needle 83 are electrically connected by forming the conductive film.

  Procedure 6: Switch from SEM observation to EBAC observation for analysis.

  This is a useful technique when the direct contact with the probe needle 83 is difficult because the analysis target pattern 141 is too fine or the exposed portion of the analysis target pattern is small. As a result, analysis can be performed without directly contacting the wiring or via with weak mechanical strength, so that the burden on the operator can be reduced.

9. Summary The invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited thereto, and it goes without saying that various changes can be made without departing from the scope of the invention.

  For example, in the above-described embodiment, the failure analysis technology of the scanning electron microscope having the EBAC function or the EBIC function or the semiconductor integrated circuit device (semiconductor device) using the same has been specifically described. Needless to say, the present invention can also be applied to a scanning electron microscope or the like.

1 is a schematic cross-sectional view of an apparatus showing an overall configuration of a scanning electron microscope apparatus according to an embodiment of the present application. In the scanning electron microscope apparatus of one embodiment of this application, it is an apparatus schematic cross section which shows the place which pulled out the sample chamber in air | atmosphere. In the scanning electron microscope apparatus of one embodiment of the present application, it is a top view of the inside of the sample chamber for explaining the prober calling operation. In the scanning electron microscope apparatus of one embodiment of the present application, it is a top view of the inside of a sample chamber showing a procedure for applying a plurality of probe needles. In the scanning electron microscope apparatus of one embodiment of the present application, it is an operation explanatory side view of the inside of the sample chamber showing a procedure for lowering the probe needle toward the sample. In the scanning electron microscope apparatus of one embodiment of the present application, a top view (a to c) of a sample in a sample chamber showing a mechanism for correcting a horizontal displacement when the probe needle is lowered toward the sample, and a detection result It is a graph (d) and explanation (e and f). In the scanning electron microscope apparatus of one embodiment of the present application, a top view (a and b) of a sample in a sample chamber and a graph of detection results (a and b) showing a mechanism for detecting landing when the probe needle is lowered toward the sample c). It is a circuit diagram which shows the basic specific example of the preamplifier unit in the scanning electron microscope apparatus of one embodiment of this application. FIG. 6 is a circuit diagram showing another specific example in which the resistance of the preamplifier unit in the scanning electron microscope apparatus according to the embodiment of the present application is variable, and a screen display explanatory diagram explaining how to use the circuit. The circuit diagram (a and b) which shows the other specific example which made resistance for the slow leak of the preamplifier unit in the scanning electron microscope apparatus of one embodiment of this application the active resistance, and the description which shows the mode of the voltage change It is a figure (c). It is a circuit diagram which shows the specific usage pattern of the preamplifier unit in the scanning electron microscope apparatus of one embodiment of this application. It is a display screen explanatory drawing which shows an example of an open defect net analysis using the scanning electron microscope apparatus of one embodiment of this application. It is a display screen explanatory drawing which shows another example of the short defect net analysis using the scanning electron microscope apparatus of one embodiment of this application. Top view (a and b) of main part of sample chamber for explaining improvement points for improving efficiency of prober operation in scanning electron microscope apparatus of one embodiment of present application, display screen and probe for explaining probe operation It is an operation corresponding figure (c to e). It is a sample surface figure about the application of electron beam CVD in the defect analysis using the scanning electron microscope apparatus of one embodiment of this application.

Explanation of symbols

1 Sample 51 Electro-optical system 55 Prober 71 Image display unit 79 Stage control unit 83 Probe needle 89 Defect analysis position

Claims (5)

Scanning electron microscope apparatus including:
(A) An image display unit that displays response information from the sample on the screen in response to scanning of the electron beam;
(B) When the defect analysis position of the sample is moved to the center of the field of view of the electron optical system displayed on the image display unit, the tip of the probe needle of the prober can be automatically moved within the field of view. Stage control unit that can be used. Scanning electron microscope apparatus including:
(A) a sample chamber in which a sample can be stored;
(B) provided in the sample chamber so that the charge accumulated in the sample can be removed via the probe needle when the tip of the probe needle of the prober contacts the sample in the sample chamber. Slow leak circuit. Scanning electron microscope apparatus including:
(A) an electron microscope apparatus main body containing an electron optical system;
(B) a sample chamber provided in the electron microscope apparatus body and capable of accommodating a sample;
(C) a prober provided in the sample chamber and to which a probe needle can be attached;
(D) a preamplifier unit provided in the sample chamber and capable of amplifying response information from the sample provided via the probe needle in response to scanning of an electron beam;
Here, the sample chamber can be drawn out from the main body of the electron microscope apparatus to the atmosphere. Scanning electron microscope apparatus including:
(A) An image display unit that displays response information from the sample on the screen in response to scanning of the electron beam;
(B) a prober capable of applying a plurality of probe needles to the sample;
(C) a stage control unit capable of rotating the sample in a plane including its main surface;
(D) a prober control unit capable of controlling the prober;
Here, the image display unit can be rotated corresponding to the rotation of the sample, and the prober control unit can interchange the operations of the plurality of probe needles in response to the rotation. Has been. Scanning electron microscope apparatus including:
(A) a sample chamber in which a sample can be stored;
(B) a prober provided in the sample chamber and capable of applying a probe needle to the sample;
(C) Landing the tip of the probe needle on the main surface of the sample by lowering the tip of the probe needle toward the main surface of the sample by a combination of rough descent and fine descent Prober control unit,
Here, the prober control unit corrects a positional deviation in a plane parallel to the main surface of the sample of the tip of the probe needle before and after the rough descent after the rough descent. Have been able to.

Images