JP2009094523A - Apparatus and method for treating substrate - Google Patents

Apparatus and method for treating substrate Download PDF

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JP2009094523A
JP2009094523A JP2008263731A JP2008263731A JP2009094523A JP 2009094523 A JP2009094523 A JP 2009094523A JP 2008263731 A JP2008263731 A JP 2008263731A JP 2008263731 A JP2008263731 A JP 2008263731A JP 2009094523 A JP2009094523 A JP 2009094523A
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support
substrate
support part
support member
wafer
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Gui-Su Park
貴 秀 朴
Hyo June Ahn
孝 俊 安
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Semes Co Ltd
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Semes Co Ltd
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Abstract

<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method for treating a substrate, for preventing the decline of cleaning efficiency of the substrate due to a supporting member that supports the substrate. <P>SOLUTION: Regarding the apparatus and method for cleaning a substrate by dipping the substrate in a treating bath filled with a treating solution, the apparatus for treating the substrate has a boat which is provided to each of the treating baths and supports the substrate during a process. The boat supports the substrate by being in contact with a mutually different point of the substrate during the process. Contact points of the substrate which the boat of each treating bath supports are made different from each other, so that contact points of the substrate which are not cleaned in any treating bath can be cleaned in different treating baths. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、基板処理装置及び方法に関し、より詳細には、処理液で満たされた処理槽にウェハを浸漬して洗浄する基板処理装置及び前記装置の基板処理方法に関する。   The present invention relates to a substrate processing apparatus and method, and more particularly to a substrate processing apparatus for immersing and cleaning a wafer in a processing tank filled with a processing liquid, and a substrate processing method for the apparatus.

一般的に半導体製造工程は、ウェハ上の微粒子金属不純物、有機汚染物、表面被膜などの様々な異物を除去する洗浄工程を含む。このような洗浄工程を行う装置のうちバッチ式ウェハ洗浄装置は基板洗浄ユニットを含む。基板洗浄ユニットは、ウェハの洗浄を行うユニットであり、複数の処理槽(treating bath)を含む。複数の処理槽は、ほぼ同一な構造を有し互いに隣接して配置される。各々の処理槽は、供給ラインから処理液の供給を受けてこれを保存し、ウェハ洗浄の時に複数のウェハを処理槽内部に満たされた処理液に浸漬して洗浄する。   Generally, a semiconductor manufacturing process includes a cleaning process for removing various foreign substances such as fine metal impurities, organic contaminants, and surface coatings on a wafer. Of the apparatuses that perform such a cleaning process, the batch type wafer cleaning apparatus includes a substrate cleaning unit. The substrate cleaning unit is a unit that cleans a wafer, and includes a plurality of processing baths. The plurality of treatment tanks have substantially the same structure and are arranged adjacent to each other. Each processing tank is supplied with a processing liquid from a supply line and stores the processing liquid, and at the time of wafer cleaning, a plurality of wafers are immersed in the processing liquid filled in the processing tank and cleaned.

しかし、上述した構造の洗浄装置は、工程時にウェハを支持する支持部材によってウェハの洗浄効率が低下する現象が発生する。すなわち、工程時に処理槽に浸漬されたウェハは支持部材に載置されて支持される。この時、支持部材と接触するウェハの部分は処理槽内の処理液によって洗浄されず、後続工程時にウェハ処理工程の効率が低下する。   However, in the cleaning apparatus having the above-described structure, a phenomenon occurs in which the cleaning efficiency of the wafer is lowered by the support member that supports the wafer during the process. That is, the wafer immersed in the processing tank during the process is placed on and supported by the support member. At this time, the portion of the wafer that comes into contact with the support member is not cleaned by the processing liquid in the processing tank, and the efficiency of the wafer processing step is reduced during the subsequent steps.

そこで本発明は、上記従来の基板処理装置及び方法の問題点に鑑みてなされたものであって、その目的は、基板を支持する支持部材によって基板の洗浄効率が低下することを防止する基板処理装置及び方法を提供することにある。
本発明の他の目的は、支持部材と接触する基板の部分を効果的に洗浄する基板処理装置及び方法を提供することにある。
Accordingly, the present invention has been made in view of the problems of the conventional substrate processing apparatus and method described above, and an object of the present invention is to prevent the substrate cleaning efficiency from being lowered by the support member that supports the substrate. It is to provide an apparatus and method.
Another object of the present invention is to provide a substrate processing apparatus and method for effectively cleaning a portion of a substrate in contact with a support member.

上記目的を達成するためになされた本発明による基板処理装置は、基板を処理する装置であって、
内部に処理液で満たされる空間を有するハウジングと、前記基板を支持する支持部材とを含み、工程時に前記ハウジング内部で前記基板を洗浄する処理槽と、複数の前記処理槽間に基板を移送する移送部と、を有し、前記支持部材は複数の支持部を含み、前記複数の処理槽が少なくとも第1処理槽と第2処理槽を含む場合には、第1処理槽での工程時に、前記基板が、第1ハウジング内部で第1支持部材の複数の支持部に接触する部分と、第2処理槽での工程時に、前記基板が、第2ハウジング内部で第2支持部材の複数の支持部に接触する部分とは互いに相違するように形成されている、ことを特徴とする。
A substrate processing apparatus according to the present invention made to achieve the above object is an apparatus for processing a substrate,
A housing having a space filled with a processing solution therein; and a support member for supporting the substrate; and a processing tank for cleaning the substrate inside the housing during a process; and transferring the substrate between the plurality of processing tanks And when the plurality of processing tanks include at least a first processing tank and a second processing tank, during the process in the first processing tank, A portion where the substrate contacts the plurality of support portions of the first support member inside the first housing and a plurality of supports of the second support member inside the second housing during the process in the second treatment tank. It is characterized in that it is formed so as to be different from the part in contact with the part.

前記第1支持部材と前記第2支持部材は、工程時に前記ハウジング内部で垂直になるように基板を支持し、前記第1支持部材と前記第2支持部材各々は、基板の端の一部分と接触する第1支持部及び第2支持部を含み、前記第1支持部と前記第2支持部は、前記ハウジング内部に浸漬された基板の中心を上下に横切る垂直線を基準に互いに対称に配置され、前記第1支持部材の前記第1支持部と前記第2支持部との間の距離は、前記第2支持部材の前記第1支持部と前記第2支持部との間の距離と相違することが好ましい。   The first support member and the second support member support the substrate so as to be vertical inside the housing during the process, and each of the first support member and the second support member is in contact with a part of an end of the substrate. The first support part and the second support part are arranged symmetrically with respect to a vertical line that vertically crosses the center of the substrate immersed in the housing. The distance between the first support part and the second support part of the first support member is different from the distance between the first support part and the second support part of the second support member. It is preferable.

前記第1支持部及び前記第2支持部各々は、工程時に基板と接触する接触部を含み、
前記第1支持部の接触部の高さと前記第2支持部の接触部の高さは、互いに同一であることが好ましい。
Each of the first support part and the second support part includes a contact part that comes into contact with the substrate during a process,
Preferably, the height of the contact portion of the first support portion and the height of the contact portion of the second support portion are the same.

前記第1支持部材と前記第2支持部材は、工程時に前記ハウジング内部で垂直になるように基板を支持し、前記第1支持部材と前記第2支持部材各々は、基板の端の一部分と接触する第1支持部、第2支持部、そして第3支持部を含み、前記第1支持部と前記第2支持部は、前記第3支持部を基準に両側に配置され、前記第1支持部材の前記第1支持部と前記第2支持部との間の距離は、前記第2支持部材の前記第1支持部と前記第2支持部との間の距離と相違することが好ましい。   The first support member and the second support member support the substrate so as to be vertical inside the housing during the process, and each of the first support member and the second support member is in contact with a part of an end of the substrate. A first support member, a second support member, and a third support member, wherein the first support member and the second support member are disposed on both sides with respect to the third support member. Preferably, the distance between the first support part and the second support part is different from the distance between the first support part and the second support part of the second support member.

前記第1支持部、前記第2支持部、そして前記第3支持部各々は、工程時に基板と接触する接触部を含み、前記第1支持部の接触部の高さと前記第2支持部の接触部の高さは、互いに同一であり、前記第3支持部の高さは、前記第1支持部及び前記第2支持部の接触部の高さより低いことが好ましい。   Each of the first support part, the second support part, and the third support part includes a contact part that contacts a substrate during a process, and the height of the contact part of the first support part and the contact of the second support part Preferably, the heights of the parts are the same, and the height of the third support part is lower than the heights of the contact parts of the first support part and the second support part.

前記第1支持部と前記第2支持部は、工程時に前記ハウジング内部に浸漬された基板の中心を上下に垂直に横切る垂直線を基準に左右対称の形状であることが好ましい。   Preferably, the first support part and the second support part have a symmetrical shape with respect to a vertical line that vertically crosses the center of the substrate immersed in the housing during the process.

前記第1支持部材と前記第2支持部材は、工程時に前記ハウジング内部で垂直になるように基板を支持し、前記第1支持部材と前記第2支持部材各々は、基板の端の一部分と接触する第1支持部、第2支持部、第3支持部、そして第4支持部を含み、前記第1支持部と前記第2支持部は、前記基板の中心を上下に横切る垂直線を基準に左右対称に配置され、前記第3支持部と前記第4支持部は、前記第1支持部と前記第2支持部との間で前記基板の中心を上下に横切る垂直線を基準に左右対称に配置され、前記第1支持部材の前記第1支持部と前記第2支持部との間の距離は、前記第2支持部材の前記第1支持部と前記第2支持部との間の距離と相違し、前記第1支持部材の前記第3支持部と前記第4支持部との間の距離は、前記第2支持部材の前記第3支持部と前記第4支持部との間の距離と相違することが好ましい。   The first support member and the second support member support the substrate so as to be vertical inside the housing during the process, and each of the first support member and the second support member is in contact with a part of an end of the substrate. Including a first support part, a second support part, a third support part, and a fourth support part. The first support part and the second support part are based on a vertical line that vertically crosses the center of the substrate. The third support part and the fourth support part are symmetrical with respect to a vertical line that vertically crosses the center of the substrate between the first support part and the second support part. The distance between the first support part and the second support part of the first support member is a distance between the first support part and the second support part of the second support member. The distance between the third support portion and the fourth support portion of the first support member is different from the second support portion. It is preferably different from the distance between the third supporting portion and the fourth supporting portion.

前記第1支持部、前記第2支持部、前記第3支持部、そして前記第4支持部各々は、工程時に基板と接触する接触部を含み、前記第1支持部の接触部の高さと前記第2支持部の接触部の高さは、互いに同一であり、前記第3支持部の接触部の高さと前記第4支持部の接触部の高さは、互いに同一であり、 前記第1支持部及び前記第2支持部の接触部の高さは、前記第3支持部及び前記第4支持部の接触部の高さより高いことが好ましい。   Each of the first support part, the second support part, the third support part, and the fourth support part includes a contact part that contacts a substrate during a process, and the height of the contact part of the first support part The height of the contact part of the second support part is the same, the height of the contact part of the third support part and the height of the contact part of the fourth support part are the same, and the first support It is preferable that the height of the contact part of the part and the second support part is higher than the height of the contact part of the third support part and the fourth support part.

前記第1処理槽及び前記第2処理槽は、互いに隣接して配置されることが好ましい。   The first treatment tank and the second treatment tank are preferably disposed adjacent to each other.

第1洗浄部は、前記第1ハウジングに第1処理液を供給する第1供給ラインを含み、第2洗浄部は、前記第2ハウジングに前記第1処理液と相違する第2処理液を供給する第2供給ラインを含むことが好ましい。   The first cleaning unit includes a first supply line that supplies the first processing liquid to the first housing, and the second cleaning unit supplies a second processing liquid different from the first processing liquid to the second housing. Preferably including a second supply line.

第1洗浄部は、前記第1ハウジングに第1処理液を供給する第1供給ラインを含み、第2洗浄部は、前記第2ハウジングに前記第1処理液を供給する第2供給ラインを含むことが好ましい。   The first cleaning unit includes a first supply line that supplies the first processing liquid to the first housing, and the second cleaning unit includes a second supply line that supplies the first processing liquid to the second housing. It is preferable.

また、上記目的を達成するためになされた本発明による基板処理方法は、処理液に基板を浸漬して基板を洗浄する複数の処理槽を具備して基板を洗浄し、前記複数の処理槽が少なくとも第1処理槽と第2処理槽を含む場合には、第1処理槽での工程時に前記基板が第1支持部材の複数の支持部に接触する部分と、第2処理槽での工程時に第2支持部材の複数の支持部に接触する部分とは互いに相違するように基板を支持して、基板を洗浄することを特徴とする。   In addition, the substrate processing method according to the present invention made to achieve the above object includes a plurality of processing tanks for immersing a substrate in a processing solution and cleaning the substrate, and cleaning the substrate, wherein the plurality of processing tanks are In the case of including at least a first treatment tank and a second treatment tank, a portion where the substrate contacts the plurality of support portions of the first support member during the process in the first treatment tank, and a step in the second treatment tank The substrate is cleaned so as to be different from the portions of the second support member that are in contact with the plurality of support portions, and the substrate is cleaned.

前記処理槽は、内部に処理液が満たされる複数のハウジング及び前記ハウジング各々に具備され前記ハウジング内部で基板を支持する支持部材を含み、前記基板の互いに異なる部分の支持は、前記ハウジング各々に具備する前記支持部材を相違する形象で形成することによって行われることが好ましい。   The processing tank includes a plurality of housings that are filled with a processing solution and a support member that is provided in each of the housings and supports a substrate inside the housing, and supports each of different portions of the substrate. Preferably, the support member is formed by forming a different shape.

前記支持部材は、工程時に前記ハウジング内部で垂直になるように基板を支持し、前記基板の互いに異なる部分の支持は、前記ハウジングに浸漬された基板の中心を横切る垂直線を基準に基板の一側端の側面と接触する前記支持部材の第1支持部と、前記垂直線を基準に基板の他側端の側面と接触する前記支持部材の第2支持部との距離を、前記処理槽毎に相違するように形成することによって行われることが好ましい。   The support member supports the substrate so as to be vertical inside the housing during the process, and supports different portions of the substrate are supported on a substrate on the basis of a vertical line across the center of the substrate immersed in the housing. The distance between the first support portion of the support member that contacts the side surface of the side end and the second support portion of the support member that contacts the side surface of the other end of the substrate with respect to the vertical line, for each processing tank. It is preferable to carry out by forming so that it may differ.

前記処理槽のうち少なくとも二つの処理槽は、互いに異なる処理液を使用して基板を洗浄することが好ましい。   It is preferable that at least two of the processing tanks clean the substrate using different processing liquids.

前記処理槽のうち少なくとも二つの処理槽は、互いに同一な処理液を使用して基板を洗浄することが好ましい。   It is preferable that at least two of the treatment tanks clean the substrate using the same treatment liquid.

前記基板の洗浄は、前記処理槽のうち何れか一つの処理槽で洗浄工程が行われた直後のウェハを前記何れか一つの処理槽と隣接する他の処理槽に浸漬して行われることがこのましい。   The cleaning of the substrate may be performed by immersing the wafer immediately after the cleaning process is performed in any one of the processing baths in another processing bath adjacent to the one processing bath. This is true.

本発明によると、工程時に基板を支持する支持部材によって基板の洗浄効率が低下することを防止して、基板の洗浄効率を向上させる。すなわち、本発明によると、工程時に各々の処理槽が基板の相違する部分を支持することによって、ある一つの処理槽で支持部材と接触する基板部分が他の処理槽で洗浄されるようにして基板の洗浄効率を向上させる。   According to the present invention, the cleaning efficiency of the substrate is improved by preventing the substrate cleaning efficiency from being lowered by the support member that supports the substrate during the process. That is, according to the present invention, each processing tank supports a different part of the substrate during the process so that the substrate portion that contacts the support member in one processing tank is cleaned in another processing tank. Improve substrate cleaning efficiency.

次に、本発明に係る基板処理装置及び方法を実施するための最良の形態の具体例を図面を参照しながら説明する。明細書全体において同一の参照符号は同一の構成要素を示す。   Next, a specific example of the best mode for carrying out the substrate processing apparatus and method according to the present invention will be described with reference to the drawings. Like reference numerals refer to like elements throughout the specification.

また、本発明による実施の形態は、ウェハを洗浄液に浸漬して洗浄する半導体基板洗浄装置を例に取り上げて説明したが、本発明は、所定の処理液で基板を処理する全ての基板処理装置に適用が可能である。
<実施の形態>
Further, although the embodiments according to the present invention have been described by taking as an example a semiconductor substrate cleaning apparatus that immerses and cleans a wafer in a cleaning liquid, the present invention covers all substrate processing apparatuses that process a substrate with a predetermined processing liquid. It can be applied to.
<Embodiment>

図1は、本発明による基板処理装置を示す平面図であり、図2は、図1に図示されたウェハ洗浄ユニットを示す正面図である。そして、図3は、図1に図示されたウェハ洗浄ユニットを示す側面図であり、図4は、図3に図示された本発明によるウェハ洗浄ユニットの処理槽のボートを示す図である。   FIG. 1 is a plan view showing a substrate processing apparatus according to the present invention, and FIG. 2 is a front view showing a wafer cleaning unit shown in FIG. 3 is a side view showing the wafer cleaning unit shown in FIG. 1, and FIG. 4 is a view showing a boat of the processing tank of the wafer cleaning unit according to the present invention shown in FIG.

図1を参照すると、本発明による基板処理装置(apparatus for treating substrate)1は、半導体基板(以下、「ウェハ」と称する)を処理する工程を行う。基板処理装置1は、カセット処理ユニット(cassette treating unit)、第1ウェハ移送ユニット(first wafer transfering unit)30、ウェハ洗浄ユニット(wafer cleaning unit)40、そして第2ウェハ移送ユニット(second wafer transfering unit)50を含む。   Referring to FIG. 1, a substrate processing apparatus 1 according to the present invention performs a process of processing a semiconductor substrate (hereinafter referred to as “wafer”). The substrate processing apparatus 1 includes a cassette processing unit, a first wafer transfer unit 30, a wafer cleaning unit 40, and a second wafer transfer unit. 50 is included.

カセット処理ユニットは、複数のウェハを収納する部材(以下、「カセット」と称する)(C)を処理する。カセット処理ユニットにはストッカーユニット(stocker unit)が使用される。ストッカーユニットは、カセット収納部10及びカセット移送部20を含む。カセット収納部10には複数のカセット(C)が移送され収納される。カセット収納部10は、カセット(C)が搬入されるための搬入部12及びカセット収納部10からカセット(C)が搬出されるための搬出部14を有する。カセット収納部10は、上下左右にカセット(C)を配置して収納する。   The cassette processing unit processes a member (hereinafter referred to as “cassette”) (C) that stores a plurality of wafers. As the cassette processing unit, a stocker unit is used. The stocker unit includes a cassette storage unit 10 and a cassette transfer unit 20. A plurality of cassettes (C) are transferred and stored in the cassette storage unit 10. The cassette storage unit 10 includes a carry-in unit 12 for carrying in the cassette (C) and a carry-out unit 14 for carrying out the cassette (C) from the cassette storage unit 10. The cassette storage unit 10 stores and stores cassettes (C) vertically and horizontally.

カセット移送部20は、カセット収納部10に収納されたカセット(C)を第1ウェハ移送ユニット30に移送する。カセット移送部20は、少なくとも一つの移送アーム(transfer arm)22を有する。移送アーム22は、カセット収納部10のプレート(図示せず)に載置されたカセット(C)を移動させ、後述する第1ウェハ移送ユニット30のロボットアーム32、34がカセット(C)内のウェハWを処理する位置に位置させる。移送アーム22は、ガイドレール(guide rail)24に沿って直線往復移動しながら、カセット収納部10に載置されたカセット(C)のうち工程上要求されるカセット(C)を処理する位置に移動される。   The cassette transfer unit 20 transfers the cassette (C) stored in the cassette storage unit 10 to the first wafer transfer unit 30. The cassette transfer unit 20 has at least one transfer arm 22. The transfer arm 22 moves a cassette (C) placed on a plate (not shown) of the cassette storage unit 10, and robot arms 32 and 34 of a first wafer transfer unit 30 to be described later are placed in the cassette (C). The wafer W is positioned at a processing position. The transfer arm 22 is in a position to process a cassette (C) required in the process among the cassettes (C) placed on the cassette storage unit 10 while reciprocating linearly along a guide rail 24. Moved.

第1ウェハ移送ユニット30は、カセット処理ユニットとウェハ洗浄ユニット40との相互間にウェハWを移送する。第1ウェハ移送ユニット30は、第1ロボットアーム(first robot arm)32及び第2ロボットアーム(second robot arm )34を有する。第1ロボットアーム32は、カセット処理ユニットからウェハ洗浄ユニット40にウェハWを移送し、第2ロボットアーム34は、ウェハ洗浄ユニット40から洗浄工程が完了されたウェハWをカセット処理ユニットに移送する。   The first wafer transfer unit 30 transfers the wafer W between the cassette processing unit and the wafer cleaning unit 40. The first wafer transfer unit 30 includes a first robot arm 32 and a second robot arm 34. The first robot arm 32 transfers the wafer W from the cassette processing unit to the wafer cleaning unit 40, and the second robot arm 34 transfers the wafer W that has been subjected to the cleaning process from the wafer cleaning unit 40 to the cassette processing unit.

基板洗浄ユニット40は、ウェハWを洗浄する工程を行う。基板洗浄ユニット(以下、「ウェハ洗浄ユニット」と称する)40は、移送部(transfer member)100、第1洗浄部(first cleaning member)200、そして第2洗浄部(second cleaning member)300を有する。 第1洗浄部200と第2洗浄部300は、移送部100を基準に両側に配置される。第1洗浄部200と第2洗浄部300は、基板処理装置1の長さ方向に沿ってほぼ平行に配置される。第1洗浄部200及び第2洗浄部300各々は、複数の処理槽(treating bath)を具備する。ウェハ洗浄ユニット40の構成に対する詳細な説明は後述する。   The substrate cleaning unit 40 performs a process of cleaning the wafer W. The substrate cleaning unit (hereinafter referred to as “wafer cleaning unit”) 40 includes a transfer part 100, a first cleaning part 200, and a second cleaning part 300. The first cleaning unit 200 and the second cleaning unit 300 are disposed on both sides with respect to the transfer unit 100. The first cleaning unit 200 and the second cleaning unit 300 are arranged substantially in parallel along the length direction of the substrate processing apparatus 1. Each of the first cleaning unit 200 and the second cleaning unit 300 includes a plurality of treating baths. A detailed description of the configuration of the wafer cleaning unit 40 will be given later.

第2ウェハ移送ユニット50は、第1洗浄部200から第2洗浄部300にウェハWを移送する。第2ウェハ移送ユニット50は、第3ロボットアーム(third robot arm )52及びガイドレール(guide rail)54を含む。第3ロボットアーム52は、ガイドレール54に沿って移動する。第3ロボットアーム52は、工程時にガイドレール54に沿って直線往復移動し、前記第3ロボットアーム52に第1洗浄部200で洗浄工程が完了したウェハWが第2洗浄部300に移送される。   The second wafer transfer unit 50 transfers the wafer W from the first cleaning unit 200 to the second cleaning unit 300. The second wafer transfer unit 50 includes a third robot arm 52 and a guide rail 54. The third robot arm 52 moves along the guide rail 54. The third robot arm 52 linearly reciprocates along the guide rail 54 during the process, and the wafer W that has been cleaned by the first cleaning unit 200 is transferred to the second cleaning unit 300 by the third robot arm 52. .

次に、本発明によるウェハ洗浄ユニット40の構成に対して詳しく説明する。図2及び図3を参照すると、移送部100は、第1洗浄部200及び第2洗浄部300にウェハWを移送する。移送部100は、第1ロボットアーム110及び第2ロボットアーム120を含む。第1ロボットアーム110は、第1アーム112及びガイドレール114を含む。第1アーム112は、ガイドレール114に沿って移動しながら、第1洗浄部200の各々の処理槽にウェハWを移送する。同様に、第2ロボットアーム120は、第2アーム122及びガイドレール124を含む。第2アーム122は、ガイドレール124に沿って移動しながら、第2洗浄部300の各々の処理槽にウェハWを移送する。   Next, the configuration of the wafer cleaning unit 40 according to the present invention will be described in detail. Referring to FIGS. 2 and 3, the transfer unit 100 transfers the wafer W to the first cleaning unit 200 and the second cleaning unit 300. The transfer unit 100 includes a first robot arm 110 and a second robot arm 120. The first robot arm 110 includes a first arm 112 and a guide rail 114. The first arm 112 transfers the wafer W to each processing tank of the first cleaning unit 200 while moving along the guide rail 114. Similarly, the second robot arm 120 includes a second arm 122 and a guide rail 124. The second arm 122 transfers the wafer W to each processing tank of the second cleaning unit 300 while moving along the guide rail 124.

第1洗浄部200及び第2洗浄部300は、ウェハWを洗浄する工程を行う。第1洗浄部200及び第2洗浄部300は、複数の処理槽(treating bath)を含む。各々の処理槽は、処理液を使用してウェハWを洗浄する工程を行う。この時、各々の処理槽で使用される処理液は互いに相違するか、または、各々の処理槽で使用される処理液が同一である。   The first cleaning unit 200 and the second cleaning unit 300 perform a process of cleaning the wafer W. The first cleaning unit 200 and the second cleaning unit 300 include a plurality of processing baths. Each processing tank performs a process of cleaning the wafer W using a processing liquid. At this time, the treatment liquids used in the respective treatment tanks are different from each other, or the treatment liquids used in the respective treatment tanks are the same.

一実施の形態として、第1洗浄部200及び第2洗浄部300各々は四つの処理槽を含む。第1洗浄部200及び第2洗浄部300が具備する処理槽は、互いに一列に配置され、各々の処理槽が使用する処理液は互いに相違できる。または、選択的に各々の処理槽のうち全部または一部の処理槽が使用する処理液は同一であり得る。本実施の形態では、第1洗浄部200の処理槽を第1乃至第4処理槽210、220、230、240と称し、第2洗浄部300の処理槽は、第5乃至第8処理槽310、320、330、340と称する。しかし、第1乃至第8処理槽210、220、230、240、310、320、330、340の配置は様々に変更することが可能である。   As an embodiment, each of the first cleaning unit 200 and the second cleaning unit 300 includes four processing tanks. The processing tanks provided in the first cleaning unit 200 and the second cleaning unit 300 are arranged in a row, and the processing liquids used by the respective processing tanks can be different from each other. Alternatively, the processing solutions used selectively by all or some of the processing tanks may be the same. In the present embodiment, the processing tanks of the first cleaning unit 200 are referred to as first to fourth processing tanks 210, 220, 230, and 240, and the processing tanks of the second cleaning unit 300 are the fifth to eighth processing tanks 310. , 320, 330, 340. However, the arrangement of the first to eighth treatment tanks 210, 220, 230, 240, 310, 320, 330, and 340 can be variously changed.

また、各々の処理槽は、ほぼ同一な構成及び構造を有する一方、工程時にウェハWを支持する支持部材(以下、「ボート(boat)」と称する)の構造は相違する。従って、本実施の形態では、第1処理槽210の構成を詳しく説明し、第2乃至第8処理槽220、230、240、310、320、330、340)の構成のうちボートを除いた残りの構成に対する詳細な説明は省略する。   Each processing tank has substantially the same configuration and structure, but the structure of a support member (hereinafter referred to as “boat”) for supporting the wafer W during the process is different. Therefore, in the present embodiment, the configuration of the first treatment tank 210 will be described in detail, and the remaining of the second to eighth treatment tanks 220, 230, 240, 310, 320, 330, and 340) excluding the boat. A detailed description of the configuration will be omitted.

第1処理槽(first treating bath)210は、第1ハウジング(first housing)212、第1ボート(first boat)214、第1噴射ノズル(first injection nozzle)216、そして第1供給ライン(first supply line)218を含む。第1ハウジング212は、内部にウェハWを洗浄する空間を有する。第1ハウジング212は、内槽(inner bath)212a及び外槽(outer bath)212bを有する。内槽212aは、内部に処理液が満たされ、ウェハ洗浄工程時にウェハWが浸漬される空間を提供する。外槽212bは、内槽212aの側面を囲むように提供され、内槽212aから溢れる処理液を収容する。第1ボート214は、工程時に第1ハウジング212内部でウェハWを支持する。この時、第1ボート214は、第1ハウジング212内部で複数のウェハWが垂直に立つように支持する。第1噴射ノズル216は、工程時に、第1供給ライン218から処理液の供給を受け、第1ボート214に安着したウェハWに処理液を噴射する。ここで、処理液は、ウェハW表面に残留する異物を除去するための薬液である。   The first treating bath 210 includes a first housing 212, a first boat 214, a first injection nozzle 216, and a first supply line (first supply line). ) 218. The first housing 212 has a space for cleaning the wafer W therein. The first housing 212 includes an inner bath 212a and an outer bath 212b. The inner tank 212a is filled with a processing liquid and provides a space in which the wafer W is immersed during the wafer cleaning process. The outer tub 212b is provided so as to surround the side surface of the inner tub 212a, and contains the processing liquid overflowing from the inner tub 212a. The first boat 214 supports the wafer W inside the first housing 212 during the process. At this time, the first boat 214 supports the plurality of wafers W so as to stand vertically within the first housing 212. The first injection nozzle 216 receives supply of the processing liquid from the first supply line 218 at the time of the process, and injects the processing liquid onto the wafer W seated on the first boat 214. Here, the processing liquid is a chemical liquid for removing foreign matters remaining on the surface of the wafer W.

第1ボート214は、工程時に、内槽212aの内部でウェハWが垂直に立つように支持する。一実施の形態として、図4を参照すると、第1ボート214は、第1支持部214a及び第2支持部214bを有する。第1支持部214a及び第2支持部214b各々は、長いバー(bar)形象を有し、互いに一定間隔に離隔して平行に配置される。第1支持部214a及び第2支持部214b各々には、工程時にウェハWの端の一部と接触する接触部214a’、214b’が形成される。接触部214a’、214b’は、ウェハWの端の一部が挿入される溝(groove)の形態に提供される。従って、工程時に、第1処理槽210の内槽212aに浸漬されたウェハWは、端の一部が第1及び第2支持部214a、214bに形成された接触部214a’、214b’に挿入されて支持される。   The first boat 214 supports the wafers W so as to stand vertically in the inner tank 212a during the process. As one embodiment, referring to FIG. 4, the first boat 214 includes a first support part 214a and a second support part 214b. Each of the first support part 214a and the second support part 214b has a long bar shape, and is arranged in parallel at a predetermined interval. Each of the first support part 214a and the second support part 214b is formed with contact parts 214a 'and 214b' that come into contact with part of the end of the wafer W during the process. The contact portions 214a 'and 214b' are provided in the form of a groove into which a part of the end of the wafer W is inserted. Accordingly, during the process, the wafer W immersed in the inner bath 212a of the first processing bath 210 is inserted into the contact portions 214a ′ and 214b ′ formed at the ends of the first and second support portions 214a and 214b. Has been supported.

第2処理槽220は、第1処理槽210の構成と大体同一な構成を有する。すなわち、第2処理槽220は、第2ハウジング(second housing)222、第2ボート(second boat)224、第2噴射ノズル(second injection nozzle)226、そして第2供給ライン(second supply line)228を含む。第2ハウジング222は、内部に処理液が満たされる空間を有し、第2ボート224は、工程時に、第2ハウジング222内部でウェハWを支持する。第2噴射ノズル226は、工程時に、第2供給ライン228から供給された処理液を第2ボート224に安着したウェハWに噴射する。   The second processing tank 220 has a configuration that is substantially the same as the configuration of the first processing tank 210. That is, the second treatment tank 220 includes a second housing 222, a second boat 224, a second injection nozzle 226, and a second supply line 228. Including. The second housing 222 has a space filled with a processing liquid, and the second boat 224 supports the wafer W inside the second housing 222 during the process. The second spray nozzle 226 sprays the processing liquid supplied from the second supply line 228 onto the wafer W seated on the second boat 224 during the process.

ここで、各々の処理槽210、220、230、240、310、320、330、340に具備される各々のボートは、工程時にウェハWの互いに異なる部分を支持する。例えば、各々のボートにおいて、工程時にウェハWと接触する接触部を有する支持部の間の距離を互いに相違するようにして、工程時に、各々の処理槽に具備されるボートがウェハWの互いに異なる部分と接触して支持するようにする。すなわち、一実施の形態として図4を参照すると、第1ボート214の第1支持部214aと第2支持部214bとの間の距離d1に比べて、第2ボート224の第1支持部224aと第2支持部224bとの間の距離d2を長くする。従って、図5に示すように、第1処理槽210の工程時にウェハWが第1ボート214の第1及び第2支持部214a、214bに接触する部分P1、P2と、第2処理槽220の工程時にウェハWが第2ボート224の第1及び第2支持部224a、224bに接触する部分P1’、P2’とは、互いに相違する。   Here, each boat provided in each processing bath 210, 220, 230, 240, 310, 320, 330, 340 supports different portions of the wafer W during the process. For example, in each boat, the boats provided in the respective processing tanks are different from each other in the wafers W in the process so that the distances between the support parts having contact portions that come into contact with the wafers W in the process are different from each other. Support in contact with the part. That is, referring to FIG. 4 as an embodiment, the first support portion 224a of the second boat 224 is compared to the distance d1 between the first support portion 214a and the second support portion 214b of the first boat 214. The distance d2 between the second support part 224b is increased. Accordingly, as shown in FIG. 5, the portions P <b> 1 and P <b> 2 where the wafer W contacts the first and second support portions 214 a and 214 b of the first boat 214 during the process of the first processing bath 210, and the second processing bath 220. The portions P1 ′ and P2 ′ where the wafer W contacts the first and second support portions 224a and 224b of the second boat 224 during the process are different from each other.

上述した一実施の形態では二つの支持部を有するボートを例に取り上げて説明したが、ボートの個数及び形象、そして構造は多様に変更及び変形できる。例えば、本発明の他の実施の形態によるボートは三つの支持部を有する。すなわち、図6を参照すると、本発明の他の実施の形態による第1処理槽210の第1ボート214’は、第1乃至第3支持部214a、214b、214cを有する。第1支持部214a及び第2支持部214bは、第3支持部214cを基準に左右対称に配置される。この時、第1支持部214a及び第2支持部214bの接触部214a’、214b’の高さは、第3支持部214cの接触部214c’高い。同様に、第2処理槽220の第2ボート224’は、第1乃至第3支持部224a、224b、224cを有する。第1乃至第3支持部224a、224b、224c各々は、第1処理槽210の第1ボート214’の構成とほぼ同一な形象を有する。この時、第2ボート224’の第1支持部224aと第2支持部224bとの間の距離d2は、第1ボート214’の第1支持部214aと第2支持部214bとの間の距離d1より長い。従って、図7に示すように、第1処理槽210のウェハ洗浄工程時に、ウェハWが第1ボート214’の第1乃至第3支持部214a、214b、214c各々に接触する部分P1、P2、P3と第2処理槽220のウェハ洗浄工程時に、ウェハWが第2ボート224’の第1乃至第3支持部224a、224b、224c各々に接触する部分P1’、P2’、P3’は互いに相違する。   In the above-described embodiment, a boat having two support portions has been described as an example. However, the number, shape, and structure of the boat can be variously changed and modified. For example, a boat according to another embodiment of the present invention has three supports. That is, referring to FIG. 6, the first boat 214 'of the first processing tank 210 according to another embodiment of the present invention includes first to third support portions 214a, 214b, and 214c. The first support part 214a and the second support part 214b are arranged symmetrically with respect to the third support part 214c. At this time, the height of the contact portions 214a 'and 214b' of the first support portion 214a and the second support portion 214b is higher than the contact portion 214c 'of the third support portion 214c. Similarly, the second boat 224 'of the second processing tank 220 includes first to third support portions 224a, 224b, and 224c. Each of the first to third support portions 224a, 224b, and 224c has a shape substantially the same as the configuration of the first boat 214 'of the first processing tank 210. At this time, the distance d2 between the first support part 224a and the second support part 224b of the second boat 224 ′ is the distance between the first support part 214a and the second support part 214b of the first boat 214 ′. longer than d1. Accordingly, as shown in FIG. 7, at the time of the wafer cleaning process of the first processing bath 210, the portions P1, P2, and the like where the wafer W contacts the first to third support portions 214a, 214b, and 214c of the first boat 214 ′. The portions P1 ′, P2 ′, and P3 ′ where the wafer W contacts the first to third support portions 224a, 224b, and 224c of the second boat 224 ′ during the wafer cleaning process of P3 and the second processing tank 220 are different from each other. To do.

このような本発明の他の実施の形態によるボートを有するウェハ洗浄ユニット40は、一実施の形態によるボートを有するウェハ洗浄ユニット40に比べて、ウェハWを支持する支持部をさらに具備することによって、工程時にウェハWをより安定的に支持する。   The wafer cleaning unit 40 having a boat according to another embodiment of the present invention further includes a support unit that supports the wafer W as compared with the wafer cleaning unit 40 having a boat according to an embodiment. The wafer W is more stably supported during the process.

また、本発明のまた他の実施の形態では、ボートが四つの支持部を有する。すなわち、図8を参照すると、本発明のまた他の実施の形態による第1処理槽210の第1ボート214’’は、第1乃至第4支持部214a、214b、214c、214dを有する。第1支持部214a及び第2支持部214bは、工程時にボート214’’に載置されたウェハWの中心を上下に横切る垂直線X1を基準に左右対称に配置される。第3支持部214c及び第4支持部214dは、第1支持部214a及び第2支持部214bの間に配置され垂直線X1を基準に左右対称に配置される。この時、第1支持部214a及び第2支持部214bの接触部214a’、214b’の高さは、第3支持部214c及び第4支持部214dの接触部214c’、214d’より高い。そして、第2処理槽220の第2ボート224’’は、第1乃至第4支持部224a、224b、224c、224dを有する。第1乃至第4支持部224a、224b、224c、224d各々は、第1処理槽210の第1ボート214’’の構成とほぼ同一な形象を有する。この時、第2ボート224’’の第1支持部224aと第2支持部224bとの間の距離d3は、第1ボート214’’の第1支持部214aと第2支持部214bとの間の距離d1より長い。また、第2ボート224’’の第3支持部224cと第4支持部224dとの間の距離d4は、第1ボート214’’の第3支持部214cと第4支持部214dとの間の距離d2より長い。
従って、図9に示すように、第1処理槽210のウェハ洗浄工程時に、ウェハWが第1ボート214’’の第1乃至第4支持部214a、214b、214c、214dに接触する部分P1、P2、P3、P4と第2処理槽220のウェハ洗浄工程時に、ウェハWが第2ボート224’’の第1乃至第4支持部224a、224b、224c、224dに接触する部分P1’、P2’、P3’、P4’は互いに相違する。
In another embodiment of the present invention, the boat has four support portions. That is, referring to FIG. 8, the first boat 214 '' of the first processing tank 210 according to another embodiment of the present invention includes first to fourth support portions 214a, 214b, 214c, and 214d. The first support part 214a and the second support part 214b are arranged symmetrically with respect to a vertical line X1 that vertically traverses the center of the wafer W placed on the boat 214 '' during the process. The third support part 214c and the fourth support part 214d are arranged between the first support part 214a and the second support part 214b, and are arranged symmetrically with respect to the vertical line X1. At this time, the heights of the contact portions 214a ′ and 214b ′ of the first support portion 214a and the second support portion 214b are higher than the contact portions 214c ′ and 214d ′ of the third support portion 214c and the fourth support portion 214d. The second boat 224 '' of the second treatment tank 220 includes first to fourth support portions 224a, 224b, 224c, and 224d. Each of the first to fourth support portions 224a, 224b, 224c, and 224d has substantially the same shape as the configuration of the first boat 214 ″ of the first processing tank 210. At this time, the distance d3 between the first support part 224a and the second support part 224b of the second boat 224 '' is between the first support part 214a and the second support part 214b of the first boat 214 ''. Longer than the distance d1. Further, the distance d4 between the third support part 224c and the fourth support part 224d of the second boat 224 '' is the distance between the third support part 214c and the fourth support part 214d of the first boat 214 ''. It is longer than the distance d2.
Accordingly, as shown in FIG. 9, during the wafer cleaning process of the first processing bath 210, the portion P1 where the wafer W contacts the first to fourth support portions 214a, 214b, 214c, 214d of the first boat 214 ''. Parts P1 ′ and P2 ′ where the wafer W contacts the first to fourth support portions 224a, 224b, 224c and 224d of the second boat 224 ″ during the wafer cleaning process of P2, P3 and P4 and the second processing tank 220. , P3 ′ and P4 ′ are different from each other.

このような本発明のまた他の実施の形態によるボートを有するウェハ洗浄ユニットは、他の実施の形態によるボートを有するウェハ洗浄ユニットに比べて、ウェハWを支持する支持部をさらに具備することによって、工程時にウェハWをより安定的に支持し、各々の処理槽のボートに具備される支持部の位置を相違するようにして、工程時に各々の処理槽のボートが基板の相違する部分と接触するようにして基板を支持する。   Such a wafer cleaning unit having a boat according to another embodiment of the present invention further includes a support unit that supports the wafer W as compared with a wafer cleaning unit having a boat according to another embodiment. The wafer W is more stably supported during the process, and the positions of the support portions provided in the boats of the respective processing tanks are made different so that the boats of the respective processing tanks are in contact with different portions of the substrate during the process. Thus, the substrate is supported.

以下、図10を参照して上述した基板処理装置1の基板処理工程の過程を詳しく説明する。図10は、本発明による基板処理方法を示すフローチャートである。基板処理装置1の工程では、まずストッカーユニットにカセット(C)が搬入される(S110)。すなわち、洗浄工程が行われるウェハWを収納したカセット(C)は、カセット収納部10の搬入部12を通じてカセット収納部10に搬入される。搬入部12に搬入されたカセット(C)は、カセット移送部20の移送アーム22によってカセット収納部10の既設定の位置に上下左右に整列して収納される。   Hereinafter, the substrate processing process of the substrate processing apparatus 1 described above will be described in detail with reference to FIG. FIG. 10 is a flowchart showing a substrate processing method according to the present invention. In the process of the substrate processing apparatus 1, the cassette (C) is first carried into the stocker unit (S110). That is, the cassette (C) storing the wafer W to be subjected to the cleaning process is loaded into the cassette storage unit 10 through the loading unit 12 of the cassette storage unit 10. The cassette (C) carried into the carry-in unit 12 is stored in the preset position of the cassette storage unit 10 in the vertical and horizontal directions by the transfer arm 22 of the cassette transfer unit 20.

第1ウェハ移送ユニット30は、カセット移送部20の移送アーム22によって移送されたカセット(C) 内のウェハWを搬出した後ウェハ洗浄ユニット40に移送する(S120)。すなわち、第1ロボットアーム32は、移送アーム22によって移送されたカセット(C)内のウェハWを順次に搬出した後、これをウェハ洗浄ユニット40の第1アーム112に移送する。   The first wafer transfer unit 30 unloads the wafer W in the cassette (C) transferred by the transfer arm 22 of the cassette transfer unit 20 and then transfers it to the wafer cleaning unit 40 (S120). That is, the first robot arm 32 sequentially unloads the wafers W in the cassette (C) transferred by the transfer arm 22 and then transfers them to the first arm 112 of the wafer cleaning unit 40.

ウェハ洗浄ユニット40は、移送されたウェハWを洗浄する(S130)。すなわち、移送部100の第1ロボットアーム110は、第1洗浄部200の各々の処理槽210、220、230、240にウェハWを浸漬することによって、ウェハW表面の異物を除去する。また、移送部100の第2ロボットアーム120は、第2洗浄部300の各々の処理槽310、320、330、340にウェハWを浸漬することによって、ウェハW表面の異物を除去する。ウェハ洗浄ユニット40のウェハ洗浄工程に対する詳細な説明は後述する。   The wafer cleaning unit 40 cleans the transferred wafer W (S130). That is, the first robot arm 110 of the transfer unit 100 removes foreign matter on the surface of the wafer W by immersing the wafer W in the respective processing tanks 210, 220, 230, and 240 of the first cleaning unit 200. In addition, the second robot arm 120 of the transfer unit 100 removes foreign matter on the surface of the wafer W by immersing the wafer W in the respective processing tanks 310, 320, 330, and 340 of the second cleaning unit 300. A detailed description of the wafer cleaning process of the wafer cleaning unit 40 will be described later.

洗浄工程が完了したウェハWは、カセット処理ユニット内のカセット(C)に移送される(S140)。すなわち、ウェハ洗浄ユニット40によって洗浄工程が完了したウェハWは、第1ウェハ移送ユニット30の第2ロボットアーム34によってカセット移送部20に位置したカセット(C)に搬入される。そして、洗浄工程が完了したウェハWを収納したカセット(C)は、ストッカーユニットの搬出部14を通じて基板処理装置1から搬出された後、後続工程が行われる設備に移送される(S150)。   The wafer W for which the cleaning process is completed is transferred to the cassette (C) in the cassette processing unit (S140). That is, the wafer W that has been cleaned by the wafer cleaning unit 40 is loaded into the cassette (C) located in the cassette transfer unit 20 by the second robot arm 34 of the first wafer transfer unit 30. Then, the cassette (C) containing the wafer W that has been subjected to the cleaning process is unloaded from the substrate processing apparatus 1 through the unloading unit 14 of the stocker unit, and then transferred to the facility where the subsequent process is performed (S150).

上述したウェハ洗浄工程が行われる間各々の処理槽は、工程時にウェハWの互いに異なる部分を支持してウェハWを洗浄する(S130)。すなわち、移送部100の第1ロボットアーム110は、第1処理槽210の内槽212aにウェハWを浸漬する。第1処理槽210の内槽212aに浸漬したウェハWは第1ボート214に安着する。この時、ウェハWは、第1ボート214の第1及び第2支持部214a、214bに形成される溝214a’、214b’に端の一部が挿入され支持される。第1ボート214にウェハWが載置されると、第1噴射ノズル216は、第1供給ライン218から処理液の供給を受け、第1ボート214に載置されたウェハWに第1処理液を噴射する。噴射された第1処理液は、ウェハW表面に付着した異物を除去する。この時、第1及び第2支持部214a、214bと接触するウェハWの部分P1、P2は、噴射される第1処理液によって完全に洗浄されない。   While the above-described wafer cleaning process is performed, each processing tank supports different parts of the wafer W during the process and cleans the wafer W (S130). That is, the first robot arm 110 of the transfer unit 100 immerses the wafer W in the inner tank 212 a of the first processing tank 210. The wafer W immersed in the inner tank 212 a of the first processing tank 210 is seated on the first boat 214. At this time, the wafer W is supported by inserting a part of the end into the grooves 214 a ′ and 214 b ′ formed in the first and second support portions 214 a and 214 b of the first boat 214. When the wafer W is placed on the first boat 214, the first injection nozzle 216 receives supply of the processing liquid from the first supply line 218, and the first processing liquid is applied to the wafer W placed on the first boat 214. Inject. The sprayed first processing liquid removes foreign matter adhering to the surface of the wafer W. At this time, the portions P1 and P2 of the wafer W that are in contact with the first and second support portions 214a and 214b are not completely cleaned by the injected first processing liquid.

第1処理槽210でのウェハW洗浄が完了すると、第1ロボットアーム110は第1処理槽210からウェハWを搬出した後、第2処理槽220の内槽222aにウェハWを浸漬する。第2処理槽220に浸漬したウェハWは第2ボート224に載置される。ここで、第2処理槽220の第2ボート224の第1及び第2支持部224a、224bがウェハWと接触する部分P1’、P2’は、第1処理槽210の第1ボート214の第1及び第2支持部214a、214bがウェハWと接触する部分P1、P2と相違する。第2ボート224にウェハWが載置されると、第2噴射ノズル226は、第2供給ライン228から処理液の供給を受けてウェハWに噴射する。この時、第2処理槽220の第2供給ライン228が供給する第2処理液は、第1処理槽210の供給ライン218が供給する処理液と相違しても良い。または、選択的に第1処理液と第2処理液は、互いに同一な処理液であっても良い。第2噴射ノズル226によって噴射される第2処理液は、ウェハW表面の異物を除去し、第1処理槽210で洗浄されなかったウェハWの端の部分P1、P2も洗浄する。   When the cleaning of the wafer W in the first processing tank 210 is completed, the first robot arm 110 unloads the wafer W from the first processing tank 210 and then immerses the wafer W in the inner tank 222a of the second processing tank 220. The wafer W immersed in the second processing tank 220 is placed on the second boat 224. Here, portions P 1 ′ and P 2 ′ where the first and second support portions 224 a and 224 b of the second boat 224 of the second processing tank 220 are in contact with the wafer W are the first boat 214 of the first processing tank 210. The first and second support portions 214a and 214b are different from the portions P1 and P2 in contact with the wafer W. When the wafer W is placed on the second boat 224, the second injection nozzle 226 receives supply of the processing liquid from the second supply line 228 and injects it onto the wafer W. At this time, the second processing liquid supplied by the second supply line 228 of the second processing tank 220 may be different from the processing liquid supplied by the supply line 218 of the first processing tank 210. Alternatively, the first processing liquid and the second processing liquid may optionally be the same processing liquid. The second processing liquid sprayed by the second spray nozzle 226 removes foreign matters on the surface of the wafer W, and also cleans the end portions P1 and P2 of the wafer W that have not been cleaned in the first processing bath 210.

第2処理槽220でのウェハW洗浄が完了すると、第1ロボットアーム110は、第3及び第4処理槽230、240に順次にウェハWを浸漬し、第3処理槽230及び第4処理槽240は浸漬したウェハWを洗浄する。この時、図3に示すように、第3処理槽230及び第4処理槽240に具備される第3及び第4ボート234、244の第1支持部と第2支持部との間の距離d3、d4が互いに相違するので、第3及び第4ボート234、244は、工程時にウェハW端の互いに異なる部分と接触する。従って、ウェハWは、第1乃至第4処理槽210、220、230、240のボートの互いに異なる部分と接触して洗浄工程が行われる。   When the cleaning of the wafer W in the second processing tank 220 is completed, the first robot arm 110 sequentially immerses the wafer W in the third and fourth processing tanks 230 and 240, and the third processing tank 230 and the fourth processing tank. 240 cleans the immersed wafer W. At this time, as shown in FIG. 3, the distance d3 between the first support portion and the second support portion of the third and fourth boats 234, 244 provided in the third processing tank 230 and the fourth processing tank 240. , D4 are different from each other, the third and fourth boats 234, 244 are in contact with different portions of the wafer W end during the process. Therefore, the wafer W is brought into contact with different portions of the boats of the first to fourth treatment tanks 210, 220, 230, and 240, and the cleaning process is performed.

第1洗浄部200のウェハW洗浄が完了すると、第2洗浄部300のウェハW洗浄が行われる。すなわち、第2ウェハ移送ユニット50は第1洗浄部200から第2洗浄部300にウェハWを移送する。そして、第2ロボットアーム120は、第5処理槽310から第8処理槽340に順次にウェハWを浸漬し、第5乃至第8処理槽310、320、330、340は順次にウェハWを洗浄する。この時、第5乃至第8処理槽310、320、330、340は、前述した第1洗浄部200と同一な方式により各々具備されるボートの第1及び第2支持部の間の距離を相違するようにして、第5乃至第8処理槽310、320、330、340の工程時ににウェハWの互いに異なる部分がボートと接触して洗浄工程が行われる。   When the cleaning of the wafer W of the first cleaning unit 200 is completed, the cleaning of the wafer W of the second cleaning unit 300 is performed. That is, the second wafer transfer unit 50 transfers the wafer W from the first cleaning unit 200 to the second cleaning unit 300. Then, the second robot arm 120 sequentially immerses the wafer W from the fifth processing tank 310 to the eighth processing tank 340, and the fifth to eighth processing tanks 310, 320, 330, and 340 sequentially wash the wafer W. To do. At this time, the fifth to eighth treatment tanks 310, 320, 330, and 340 have different distances between the first and second support parts of the boat that are provided in the same manner as the first cleaning part 200 described above. In this manner, different parts of the wafer W come into contact with the boat during the processes of the fifth to eighth treatment tanks 310, 320, 330, and 340, and the cleaning process is performed.

洗浄工程が完了したウェハWは、カセット処理ユニット内のカセット(C)に移送される(S140)。すなわち、ウェハ洗浄ユニット40によって洗浄工程が完了したウェハWは、第1ウェハ移送ユニット30の第2ロボットアーム34によってカセット移送部20に位置したカセット(C)に搬入される。(S140)。そして、洗浄工程が完了したウェハWを収納したカセット(C)は、ストッカーユニットの搬出部14を通じて基板処理装置1から搬出された後、後続工程が行われる設備に移送される(S150)。   The wafer W for which the cleaning process is completed is transferred to the cassette (C) in the cassette processing unit (S140). That is, the wafer W that has been cleaned by the wafer cleaning unit 40 is loaded into the cassette (C) located in the cassette transfer unit 20 by the second robot arm 34 of the first wafer transfer unit 30. (S140). Then, the cassette (C) containing the wafer W that has been subjected to the cleaning process is unloaded from the substrate processing apparatus 1 through the unloading unit 14 of the stocker unit, and then transferred to the facility where the subsequent process is performed (S150).

上述のように、本発明によるウェハ洗浄ユニット及び基板処理装置は、各々の処理槽のボートの支持部の間の距離を相違するようにして、ウェハ洗浄の時に各々の処理槽に具備されるボートがウェハと接触する部分を相違するようにする。従って、ある処理槽でボートと接触して洗浄されなかったウェハの部分が他の処理槽で洗浄されることにより、装置の洗浄工程の効率が向上する。   As described above, in the wafer cleaning unit and the substrate processing apparatus according to the present invention, the boats included in each processing bath at the time of wafer cleaning are configured such that the distances between the support portions of the boats in the respective processing baths are different. The portions in contact with the wafer are made different. Accordingly, the portion of the wafer that has not been cleaned in contact with the boat in a certain processing tank is cleaned in another processing tank, thereby improving the efficiency of the cleaning process of the apparatus.

尚、本発明は、上述の実施形態に限られるものではない。本発明の技術的範囲から逸脱しない範囲内で多様に変更実施することが可能である。   The present invention is not limited to the embodiment described above. Various modifications can be made without departing from the technical scope of the present invention.

本発明の実施の形態による基板処理装置を示す平面図である。It is a top view which shows the substrate processing apparatus by embodiment of this invention. 図1に図示されたウェハ洗浄ユニットを示す正面図である。FIG. 2 is a front view illustrating the wafer cleaning unit illustrated in FIG. 1. 図1に図示されたウェハ洗浄ユニットを示す側面図である。FIG. 2 is a side view illustrating the wafer cleaning unit illustrated in FIG. 1. 図3に図示されたボートを示す斜視図である。FIG. 4 is a perspective view illustrating the boat illustrated in FIG. 3. 本発明の実施の形態による基板処理方法を示す図である。It is a figure which shows the substrate processing method by embodiment of this invention. 本発明の他の実施の形態による基板洗浄過程を説明する図である。It is a figure explaining the board | substrate cleaning process by other embodiment of this invention. 本発明の他の実施の形態による基板洗浄過程を説明する図である。It is a figure explaining the board | substrate cleaning process by other embodiment of this invention. 本発明のまた他の実施の形態による基板洗浄過程を説明する図である。It is a figure explaining the board | substrate cleaning process by other embodiment of this invention. 本発明のまた他の実施の形態による基板洗浄過程を説明する図である。It is a figure explaining the board | substrate cleaning process by other embodiment of this invention. 発明の実施の形態による基板洗浄過程を説明するフローチャートである。5 is a flowchart illustrating a substrate cleaning process according to an embodiment of the invention.

符号の説明Explanation of symbols

1 基板処理装置
10 カセット収納部
20 カセット移送部
30 第1ウェハ移送ユニット
40 ウェハ洗浄ユニット
50 第2ウェハ移送ユニット
100 移送部
200 第1洗浄部
300 第2洗浄部
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 10 Cassette storage part 20 Cassette transfer part
30 First Wafer Transfer Unit 40 Wafer Cleaning Unit 50 Second Wafer Transfer Unit 100 Transfer Unit 200 First Cleaning Unit 300 Second Cleaning Unit

Claims (17)

基板を処理する装置であって、
内部に処理液で満たされる空間を有するハウジングと、前記基板を支持する支持部材とを含み、
工程時に前記ハウジング内部で前記基板を洗浄する処理槽と、
複数の前記処理槽間に基板を移送する移送部と、を有し、
前記支持部材は複数の支持部を含み、
前記複数の処理槽が少なくとも第1処理槽と第2処理槽を含む場合には、
第1処理槽での工程時に、前記基板が、第1ハウジング内部で第1支持部材の複数の支持部に接触する部分と、第2処理槽での工程時に、 第2ハウジング内部で第2支持部材の複数の支持部に接触する部分とは互いに相違するように形成されている、ことを特徴とする基板処理装置。
An apparatus for processing a substrate,
A housing having a space filled with a processing solution inside, and a support member for supporting the substrate;
A treatment tank for cleaning the substrate inside the housing during a process;
A transfer unit that transfers the substrate between the plurality of processing tanks,
The support member includes a plurality of support portions,
When the plurality of treatment tanks include at least a first treatment tank and a second treatment tank,
The substrate is in contact with the plurality of support portions of the first support member inside the first housing during the process in the first treatment tank, and the second support inside the second housing during the process in the second treatment tank. A substrate processing apparatus, wherein the member is formed so as to be different from a portion that contacts a plurality of support portions of the member.
前記第1支持部材と前記第2支持部材は、
工程時に前記ハウジング内部で垂直になるように基板を支持し、
前記第1支持部材と前記第2支持部材各々は、
基板の端の一部分と接触する第1支持部及び第2支持部を含み、
前記第1支持部と前記第2支持部は、
前記ハウジング内部に浸漬された基板の中心を上下に横切る垂直線を基準に互いに対称に配置され、
前記第1支持部材の前記第1支持部と前記第2支持部との間の距離は、
前記第2支持部材の前記第1支持部と前記第2支持部との間の距離と相違することを特徴とする請求項1に記載の基板処理装置。
The first support member and the second support member are:
Support the substrate to be vertical inside the housing during the process,
Each of the first support member and the second support member is
Including a first support and a second support in contact with a portion of the edge of the substrate;
The first support part and the second support part are:
Arranged symmetrically with respect to a vertical line that vertically crosses the center of the substrate immersed in the housing,
The distance between the first support part and the second support part of the first support member is
The substrate processing apparatus according to claim 1, wherein a distance between the first support portion and the second support portion of the second support member is different.
前記第1支持部及び前記第2支持部各々は、
工程時に基板と接触する接触部を含み、
前記第1支持部の接触部の高さと前記第2支持部の接触部の高さは、
互いに同一であることを特徴とする請求項2に記載の基板処理装置。
Each of the first support part and the second support part is
Including a contact portion that contacts the substrate during the process;
The height of the contact portion of the first support portion and the height of the contact portion of the second support portion are:
The substrate processing apparatus according to claim 2, wherein the substrate processing apparatuses are identical to each other.
前記第1支持部材と前記第2支持部材は、
工程時に前記ハウジング内部で垂直になるように基板を支持し、
前記第1支持部材と前記第2支持部材各々は、
基板の端の一部分と接触する第1支持部、第2支持部、そして第3支持部を含み、
前記第1支持部と前記第2支持部は、前記第3支持部を基準に両側に配置され、
前記第1支持部材の前記第1支持部と前記第2支持部との間の距離は、
前記第2支持部材の前記第1支持部と前記第2支持部との間の距離と相違することを特徴とする請求項1に記載の基板処理装置。
The first support member and the second support member are:
Support the substrate to be vertical inside the housing during the process,
Each of the first support member and the second support member is
Including a first support, a second support, and a third support in contact with a portion of the edge of the substrate;
The first support part and the second support part are arranged on both sides with respect to the third support part,
The distance between the first support part and the second support part of the first support member is
The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is different from a distance between the first support portion and the second support portion of the second support member.
前記第1支持部、前記第2支持部、そして前記第3支持部各々は、
工程時に基板と接触する接触部を含み、
前記第1支持部の接触部の高さと前記第2支持部の接触部の高さは、互いに同一であり、
前記第3支持部の高さは、
前記第1支持部及び前記第2支持部の接触部の高さより低いことを特徴とする請求項4に記載の基板処理装置。
Each of the first support portion, the second support portion, and the third support portion is:
Including a contact portion that contacts the substrate during the process;
The height of the contact part of the first support part and the height of the contact part of the second support part are the same,
The height of the third support part is
The substrate processing apparatus according to claim 4, wherein the substrate processing apparatus is lower than a height of a contact portion between the first support portion and the second support portion.
前記第1支持部と前記第2支持部は、
工程時に前記ハウジング内部に浸漬された基板の中心を上下に垂直に横切る垂直線を基準に左右対称の形状であることを特徴とする請求項5に記載の基板処理装置。
The first support part and the second support part are:
6. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus has a symmetrical shape with respect to a vertical line that vertically crosses the center of the substrate immersed in the housing during the process.
前記第1支持部材と前記第2支持部材は、
工程時に前記ハウジング内部で垂直になるように基板を支持し、
前記第1支持部材と前記第2支持部材各々は、
基板の端の一部分と接触する第1支持部、第2支持部、第3支持部、そして第4支持部を含み、
前記第1支持部と前記第2支持部は、前記基板の中心を上下に横切る垂直線を基準に左右対称に配置され、
前記第3支持部と前記第4支持部は、前記第1支持部と前記第2支持部との間で前記基板の中心を上下に横切る垂直線を基準に左右対称に配置され、
前記第1支持部材の前記第1支持部と前記第2支持部との間の距離は、
前記第2支持部材の前記第1支持部と前記第2支持部との間の距離と相違し、
前記第1支持部材の前記第3支持部と前記第4支持部との間の距離は、
前記第2支持部材の前記第3支持部と前記第4支持部との間の距離と相違することを特徴とする請求項1に記載の基板処理装置。
The first support member and the second support member are:
Support the substrate to be vertical inside the housing during the process,
Each of the first support member and the second support member is
Including a first support part, a second support part, a third support part, and a fourth support part in contact with a part of the edge of the substrate;
The first support part and the second support part are arranged symmetrically with respect to a vertical line that crosses the center of the substrate up and down,
The third support part and the fourth support part are arranged symmetrically between the first support part and the second support part with respect to a vertical line that vertically crosses the center of the substrate.
The distance between the first support part and the second support part of the first support member is
Unlike the distance between the first support part and the second support part of the second support member,
The distance between the third support portion and the fourth support portion of the first support member is
The substrate processing apparatus according to claim 1, wherein a distance between the third support portion and the fourth support portion of the second support member is different.
前記第1支持部、前記第2支持部、前記第3支持部、そして前記第4支持部各々は、
工程時に基板と接触する接触部を含み、
前記第1支持部の接触部の高さと前記第2支持部の接触部の高さは、
互いに同一であり、
前記第3支持部の接触部の高さと前記第4支持部の接触部の高さは、
互いに同一であり、
前記第1支持部及び前記第2支持部の接触部の高さは、
前記第3支持部及び前記第4支持部の接触部の高さより高いことを特徴とする請求項7に記載の基板処理装置。
Each of the first support portion, the second support portion, the third support portion, and the fourth support portion is:
Including a contact portion that contacts the substrate during the process;
The height of the contact portion of the first support portion and the height of the contact portion of the second support portion are:
Are identical to each other,
The height of the contact portion of the third support portion and the height of the contact portion of the fourth support portion are:
Are identical to each other,
The height of the contact part of the first support part and the second support part is:
The substrate processing apparatus according to claim 7, wherein the height is higher than a height of a contact portion between the third support portion and the fourth support portion.
前記第1処理槽及び前記第2処理槽は、
互いに隣接して配置されることを特徴とする請求項1乃至8の何れか一項に記載の基板処理装置。
The first treatment tank and the second treatment tank are
The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is disposed adjacent to each other.
第1洗浄部は、
前記第1ハウジングに第1処理液を供給する第1供給ラインを含み、
第2洗浄部は、
前記第2ハウジングに前記第1処理液と相違する第2処理液を供給する第2供給ラインを含むことを特徴とする請求項1乃至8の何れか一項に記載の基板処理装置。
The first cleaning unit
A first supply line for supplying a first treatment liquid to the first housing;
The second cleaning unit
The substrate processing apparatus according to claim 1, further comprising a second supply line that supplies a second processing liquid different from the first processing liquid to the second housing.
第1洗浄部は、
前記第1ハウジングに第1処理液を供給する第1供給ラインを含み、
第2洗浄部は、
前記第2ハウジングに前記第1処理液を供給する第2供給ラインを含むことを特徴とする請求項1乃至8の何れか一項に記載の基板処理装置。
The first cleaning unit
A first supply line for supplying a first treatment liquid to the first housing;
The second cleaning unit
The substrate processing apparatus according to claim 1, further comprising a second supply line that supplies the first processing liquid to the second housing.
処理液に基板を浸漬して基板を洗浄する複数の処理槽を具備して基板を洗浄し、
前記複数の処理槽が少なくとも第1処理槽と第2処理槽を含む場合には、
第1処理槽での工程時に前記基板が第1支持部材の複数の支持部に接触する部分と、第2処理槽での工程時に第2支持部材の複数の支持部に接触する部分とは互いに相違するように基板を支持して、基板を洗浄することを特徴とする基板処理方法。
A plurality of treatment tanks for washing the substrate by immersing the substrate in the treatment liquid are provided, and the substrate is washed.
When the plurality of treatment tanks include at least a first treatment tank and a second treatment tank,
The portion where the substrate contacts the plurality of support portions of the first support member during the step in the first treatment tank and the portion where the substrate contacts the plurality of support portions of the second support member during the step in the second treatment tank are mutually A substrate processing method characterized by supporting a substrate so as to be different and cleaning the substrate.
前記処理槽は、
内部に処理液が満たされる複数のハウジング及び前記ハウジング各々に具備され前記ハウジング内部で基板を支持する支持部材を含み、
前記基板の互いに異なる部分の支持は、
前記ハウジング各々に具備する前記支持部材を相違する形象で形成することによって行われることを特徴とする請求項12に記載の基板処理方法。
The treatment tank is
A plurality of housings filled with a processing solution and a support member provided in each of the housings for supporting a substrate inside the housing;
Supporting different parts of the substrate is:
The substrate processing method according to claim 12, wherein the substrate processing method is performed by forming the support members included in the housings in different shapes.
前記支持部材は、
工程時に前記ハウジング内部で垂直になるように基板を支持し、
前記基板の互いに異なる部分の支持は、
前記ハウジングに浸漬された基板の中心を横切る垂直線を基準に基板の一側端の側面と接触する前記支持部材の第1支持部と、前記垂直線を基準に基板の他側端の側面と接触する前記支持部材の第2支持部との距離を、前記処理槽毎に相違するように形成することによって行われることを特徴とする請求項13に記載の基板処理方法。
The support member is
Support the substrate to be vertical inside the housing during the process,
Supporting different parts of the substrate is:
A first support portion of the support member that contacts a side surface of one side end of the substrate with respect to a vertical line crossing a center of the substrate immersed in the housing; and a side surface of the other side end of the substrate with respect to the vertical line. 14. The substrate processing method according to claim 13, wherein the substrate processing method is performed by forming a distance between the supporting member and the second supporting portion so as to be different for each of the processing tanks.
前記処理槽のうち少なくとも二つの処理槽は、
互いに異なる処理液を使用して基板を洗浄することを特徴とする請求項12乃至14の何れか一項に記載の基板処理方法。
At least two of the treatment tanks are
The substrate processing method according to claim 12, wherein the substrate is cleaned using different processing liquids.
前記処理槽のうち少なくとも二つの処理槽は、
互いに同一な処理液を使用して基板を洗浄することを特徴とする請求項12乃至14の何れか一項に記載の基板処理方法。
At least two of the treatment tanks are
The substrate processing method according to claim 12, wherein the substrate is cleaned using the same processing liquid.
前記基板の洗浄は、
前記処理槽のうち何れか一つの処理槽で洗浄工程が行われた直後のウェハを前記何れか一つの処理槽と隣接する他の処理槽に浸漬して行われることを特徴とする請求項12乃至14の何れか一項に記載の基板処理方法。
Cleaning the substrate
The wafer immediately after the cleaning step is performed in any one of the processing tanks is performed by immersing the wafer in another processing tank adjacent to any one of the processing tanks. The substrate processing method as described in any one of thru | or 14.
JP2008263731A 2007-10-10 2008-10-10 Apparatus and method for treating substrate Pending JP2009094523A (en)

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