JP2009070899A - Plasma processing device and plasma processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing device for processing a pattern that is finer in dimension than plasma. <P>SOLUTION: The plasma processing device includes an upper electrode 2 for generating plasma 1, a stage 3 on which a base material 6 to be subjected to plasma processing is disposed, a power supply 4 which applies a voltage to the upper electrode 2, a moving mechanism 5 disposed on the upper electrode 2, and a control unit 120. The control unit 120 controls the operation of the power supply 4 and the moving mechanism 5 to repeat generation of the plasma 1 and move of the upper electrode 2 through the moving mechanism 5. The moving mechanism 5 moves the upper electrode 2 so that an exposure area of the base material 6 to the plasma 1 before the move overlaps the exposure area after the move. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a plasma processing method and a plasma processing apparatus that perform processing on a substrate using plasma, and relates to microfabrication of semiconductors mainly found in MEMS (Micro Electro Mechanical Systems), liquid crystal panels, and organic EL (Electro Luminescence). ) Panels, flat panel displays such as PDP (Plasma Display Panel), and solar cells.

  In recent years, research on microplasma that generates plasma of a necessary size in a microscopic region and performs a process in a microscopic spot region has been actively conducted. In an example where microplasma is applied, there is a single discharge cell of PDP and the like, but now it is expected to develop new application technologies for material synthesis, fine processing, chemical analysis, photonic devices, and the like.

  For example, Patent Document 1 discloses a plasma jet generator that generates plasma by a solenoid antenna and generates a plasma jet from a nozzle having a small inner diameter. In this apparatus, a plasma jet and a reactive gas are irradiated to a local portion of an object to be processed from a pipe having an inner diameter of about 0.4 to 2.0 mm, and processing such as etching and film deposition and surface treatment can be performed.

In Patent Document 2, the dielectric pattern mask is brought into contact with the conductive film, and plasma is generated in the space formed in the concave portion of the dielectric pattern mask and the conductive film, or the conductive pattern mask is processed. There is shown a plasma patterning method for a conductive film, in which processing is performed by generating plasma between the convex portion of the conductive pattern mask and the conductive film by bringing the film close to the conductive film. In addition, the above plasma generation method is such that a plasma is irradiated from the back surface of a base material on which a dielectric pattern mask is formed or a dielectric layer on which a conductive pattern mask is formed, so that a secondary microscopic area is formed in the vicinity of the processing portion on the surface. This is done by generating a discharge.
Japanese Patent No. 3768854 JP 2007-012668 A

  However, the plasma processing method using the above apparatus or method can form a fine pattern only by generating fine plasma, and cannot process a region finer than the size of the plasma. For this reason, in order to form a finer pattern, it cannot be realized without a smaller plasma generating apparatus, and it is very difficult to miniaturize the pattern. Furthermore, in Patent Document 1, there is a concern that the processing is required for a long time when the area of the substrate to be processed is large, and that the accuracy is deteriorated due to gas diffusion because of the plasma jet. Further, in Patent Document 2, a dielectric pattern mask is required, and it is also limited to patterning of a conductive thin film, and it is inefficient because it uses plasma generated by secondary discharge. .

  The present invention has been made to solve the above-described problems, and it is an object of the present invention to provide a plasma processing method and a plasma processing apparatus for performing pattern processing finer than plasma dimensions.

  The present invention according to one aspect is a plasma processing apparatus that includes a generation unit that generates plasma, and performs plasma processing on an irradiation region of the substrate that is irradiated with the plasma. The irradiation region is defined as an irradiation region. The moving means for changing to a new overlapping irradiation area and the control means for controlling the operation of the generating means and the moving means are provided, and the control means repeatedly performs the generation of the plasma and the change of the irradiation area. The operations of the generating means and the moving means are controlled.

  Preferably, the irradiation region has a width W, and the moving unit changes the irradiation region by a distance smaller than W in the width direction.

  More preferably, the moving means changes the irradiation area by a distance D satisfying W × 1/2 <D <W in the width direction.

  More preferably, the generation means is a plasma head including a plurality of plasma generation units arranged in a direction orthogonal to the width direction.

  Preferably, the irradiation area is an area of vertical A and horizontal B, and the moving unit changes the irradiation area by a distance smaller than A in the vertical direction and changes by a distance smaller than B in the horizontal direction.

  More preferably, the moving means changes the irradiation area by a distance D1 that satisfies A × 1/2 <D1 <B in the vertical direction and changes by a distance D2 that satisfies B × 1/2 <D2 <B in the horizontal direction. To do.

  More preferably, the generating means is a plasma head including a plurality of plasma generating units arranged at a predetermined interval.

Preferably, the moving means is a moving mechanism that moves the generating means.
Preferably, the apparatus further includes a stage on which the substrate is placed, and the moving means is a moving mechanism that moves the stage.

More preferably, the moving mechanism is an actuator.
Preferably, the apparatus further includes a power source that generates a voltage between the base material and the generation unit, and the generation unit generates plasma according to the voltage.

More preferably, the power supply generates a pulse voltage.
Preferably, the atmospheric pressure during plasma treatment is 10 to 1000 kPa.

  The present invention according to another aspect is a method of performing plasma processing on a base material, the step of irradiating the base material with plasma, and performing plasma processing on an irradiation region of the base material irradiated with plasma And a step of changing the irradiation region so that a part of the irradiation region after the change of the irradiation region overlaps a part of the irradiation region before the change.

  According to the present invention, it is possible to repeat the plasma processing and the change of the irradiation region. As a result, it is possible to perform pattern processing that is finer than the dimensions of plasma.

  First, the functional configuration of the plasma processing apparatus according to the present invention will be described with reference to FIG. FIG. 1 is a diagram showing a functional configuration of a plasma processing apparatus according to the present invention. As shown in FIG. 1, the plasma processing apparatus is roughly divided into a plasma generation unit 100, a movement unit 110, and a control unit 120.

  The plasma generator 100 generates plasma having a certain spatial extent. When plasma is generated by the plasma generation unit 100 after the substrate is placed at a predetermined position, a plasma treatment is performed on a region of the substrate that is irradiated with plasma (hereinafter referred to as an irradiation region). Here, the plasma treatment refers to causing a physical or chemical change of the substrate by irradiating with plasma. The plasma treatment includes, for example, etching and surface modification.

  The moving unit 110 changes the irradiation area. The moving unit 110 can change the relative position between the base material and the plasma generation unit by changing the position of the plasma generation unit itself, or changing the position of the base material, or the plasma generation unit itself. Although the position is not changed, one that controls the plasma generation position can be used.

  The control unit 120 controls the operations of the plasma generation unit 100 and the movement unit 110. In particular, it is possible to control the plasma generation timing by the plasma generation unit 100 and the processing region change timing by the moving unit 110.

(First embodiment)
Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a plasma processing apparatus for realizing the plasma processing method according to the first embodiment of the present invention will be described with reference to FIG. FIG. 2 is a side sectional view of the plasma processing apparatus according to the first embodiment of the present invention. The plasma processing apparatus includes an upper electrode 2 for generating plasma 1, a stage 3 on which a substrate 6 to be subjected to plasma processing is disposed, a power supply 4 for applying a voltage to the upper electrode 2, and a movement installed on the upper electrode 2. The mechanism 5 and the control unit 120 are included. In the figure, the control unit 120, the power source 4, and the moving mechanism 5 are illustrated as being connected. However, the operation of the power source 4 and the moving mechanism 5 may be controlled by wireless communication or the like. Absent. Moreover, although not shown in figure, the atmospheric pressure control apparatus for controlling the atmospheric | air pressure of the area | region where a plasma generate | occur | produces is also included.

  The stage 3 is grounded, and a plasma 1 is generated between the upper electrode 2 and the stage 3 by applying a voltage to the upper electrode 2 by the power source 4. However, the form of the plasma generation unit 100 is not limited to this form. For example, it may be one that generates plasma at a location different from the substrate 6. If the power source 4 is a pulse power source that generates a pulse voltage, the amount of processing can be controlled by setting the number of applied pulses in one process, so that the accuracy of the plasma processing region is improved. As a result, the accuracy of the pattern generated by the plasma processing apparatus is improved. Moreover, the space generation range of plasma can be limited by controlling the pressure at the time of plasma processing by the atmospheric pressure control device. As a result, the accuracy of the plasma processing region and thus the pattern to be generated is improved. In particular, the atmospheric pressure during the plasma treatment is preferably 10 to 1000 kPa, and the atmospheric pressure control apparatus can generate such an atmospheric pressure.

  The moving mechanism 5 moves the upper electrode 2 along the stage 3. Further, the moving mechanism 5 can move the upper electrode 2 in the width direction of the upper electrode 2 by a distance smaller than the width of the upper electrode 2. The configuration in which the upper electrode 2 is moved in this way is effective when the substrate 6 is large and the stage 3 is difficult to move. Moreover, the accuracy of position control improves by using the actuator provided with the position sensor for the moving mechanism 5. The moving mechanism 5 is not limited to the above-described one, and may be any mechanism that can change the relative position between the upper electrode 2 and the stage 3.

  The substrate 6 may be a large substrate such as a liquid crystal substrate or a solar panel, or may be a wafer size used in MEMS. Depending on the size of the base material 6, an elongate electrode having a horizontal size of m and a vertical size of mm size may be used as the upper electrode 2, or an electrode having a small size in four directions or a diameter of μm may be used. The distance between the substrate 6 and the upper electrode 2 is preferably about several mm so that the generated plasma 1 does not spread.

  Here, an example of the configuration of the moving mechanism 5 will be described with reference to FIG. FIG. 3 is a diagram illustrating an example of the configuration of the moving mechanism 5. In this example, the moving mechanism 5 includes an electrode unit 31 including the upper electrode 2, an x stage 32, and a y stage 33. Electric power from the power source 4 is supplied to the electrode unit 31 via the relay unit 36 by the power cable 35. In addition, the power from the power source 4 is also supplied to the x stage 32 via the relay unit 36 by the power cable 35. The power cable 35 is covered with a cable chain 34. Further, a gas pipe or a cooling water pipe may be passed through the cable chain 34. The electrode unit 31 moves on a rail installed on the x stage 32. The x stage 32 moves on a rail installed on the y stage 33. However, when the movement in only one direction is sufficient, the x stage 32 may be fixed to the y stage 33. Alternatively, the electrode unit 31 may be fixed to the x stage 32.

  Next, one of plasma processing methods using the plasma processing apparatus shown in FIG. 2 will be described with reference to FIG. FIG. 4 is a diagram showing the steps of the plasma processing method according to the first embodiment of the present invention.

  First, the control unit 120 drives the power supply 4 and applies a voltage to the upper electrode 2 to cause the upper electrode 2 to generate the plasma 1. At this time, the plasma irradiation area in the base material 6 (this area corresponds to the area where the plasma treatment is performed, and hence the plasma treatment area 7 hereinafter) is the magnitude of the plasma generated by the upper electrode 2, And it is determined by the relative position of the upper electrode 2 and the base material 6. In the present embodiment, it is assumed that the plasma processing region 7 is a rectangular region having a width W as shown in FIG.

  Next, the control unit 120 causes the moving mechanism 5 to move the upper electrode 2 by D = 2/3 W in the electrode width direction, and then causes the upper electrode 2 to generate plasma 1. As a result of this process, as shown in FIG. 4B, the substrate 6 is formed with a region 8 that has been plasma-treated once and a region 9 that has been plasma-treated twice. The width of the region 9 subjected to the plasma processing twice is 1/3 W, which is narrower than the width of the plasma processing region 7. Again, the control unit 120 causes the moving mechanism 5 and the upper electrode 2 to repeat the same movement and plasma generation. The state of the substrate 6 after this processing is as shown in FIG. Further, by repeating plasma generation and movement many times, a pattern as shown in FIG. 4D is obtained. In the pattern shown in FIG. 4D, the widths of the region subjected to the plasma treatment once and the region subjected to the plasma treatment twice are both 1/3 W and 2/3 W (= D) in total. Narrower than the width.

  FIG. 5 is an enlarged side cross-sectional view of a base material that has been processed by the plasma processing method shown in FIG. 4. As can be seen from FIG. 5, a pattern in which a region narrower than the electrode width W is repeated is generated on the processing target film 10 according to the number of times of processing on the substrate. However, in this figure, since the space between the upper electrode 2 and the stage 3 is sufficiently narrow and the plasma does not spread, the width of the plasma processing region 7 and the width of the upper electrode 2 are drawn to be the same. In addition, assuming that the plasma treatment is etching, a drawing processed so as to have an uneven surface within a dimension narrower than the electrode width W is drawn, but the plasma treatment to be applied is not limited to etching. The present invention can be applied to any process that can obtain different processing results depending on the difference in the number of times applied.

  The movement amount D is not limited to 2/3 W, and may be determined according to the application and purpose. In the above example, since the movement amount D of the plasma processing unit is 2/3 W, the widths of the region 8 and the region 9 are common, but D is set to a different value, the width of the region 8 (2D−W), The width (WD) of 9 can be made different. However, since a part of the plasma processing region before moving the upper electrode 2 and a part of the plasma processing region after moving the upper electrode 2 need to overlap, the moving amount D needs to satisfy D <W. There is.

  In the present embodiment, the movement amount D also satisfies W × 1/2 <D. This is preferable from the viewpoint of the number of plasma treatments required to make a treatment region smaller than the electrode width. For example, when 0 <D <W × 1/2, three plasma treatments (three plasma generations and two irradiation region changes) cannot create two treatment regions smaller than the electrode width. If x1 / 2 <D <W, it is possible to create processing regions smaller than two electrode widths by three plasma treatments. In general, when W × 1/2 <D <W, a processing region smaller than the N−1 electrode width can be formed by N times (N is a positive integer) plasma processing, and a plurality of electrodes can be formed. In forming a processing region smaller than the width, the number of plasma processings can be reduced as compared with the case of 0 <D <W × 1/2.

(Second Embodiment)
FIG. 6 shows a side sectional view of a plasma processing apparatus for realizing the plasma processing method according to the second embodiment of the present invention.

  The plasma processing apparatus shown in FIG. 6 differs from the plasma processing apparatus described in the first embodiment in that the plasma generation unit 100 is a plasma head composed of a plurality of upper electrodes 2. Further, the moving mechanism 5 is different in that it is provided not on the upper electrode 2 but on the stage 3. The moving mechanism 5 can move the stage 3 by a distance smaller than the width of the upper electrode 2 in the width direction of the upper electrode 2 while keeping the distance from the upper electrode 2 constant. The stage 3 is moved in this way when the weight of the electrode located in the upper part becomes very heavy due to a plurality of upper electrodes 2 or when there is a concern about scattering of particles to the base material 6. Better. However, the configuration of the moving mechanism 5 is not limited to this, and may be provided on the upper electrode 2 as in the first embodiment, or may be another configuration.

  Next, one of plasma processing methods using the plasma processing apparatus shown in FIG. 6 will be described with reference to FIG.

  FIG. 7 is a diagram showing the steps of the plasma processing method according to the second embodiment of the present invention. First, the control unit 120 causes the plasma generation unit to generate plasma. The state of the base material 6 after this is shown in FIG. The width of the plasma processing region 7 by each of the plurality of upper electrodes 2 is determined by the size of each upper electrode 2 and the relative position between each upper electrode 2 and the substrate 6. In the present embodiment, it is assumed that the sizes of the upper electrodes 2 are equal and the widths of the plasma processing regions 7 are all W. Further, the upper electrodes 2 are arranged in a direction orthogonal to the width direction, and the positional relationship between the plasma processing regions 7 by the respective upper electrodes 2 is as shown in FIG. .

  Next, the control unit 120 causes the moving mechanism 5 to move the stage 3 by D = 2/3 W in the electrode width direction, and then causes the plasma generation unit 100 to generate plasma. As a result of this treatment, as shown in FIG. 7B, a region 8 that has been subjected to the plasma treatment once and a region 9 that has been subjected to the plasma treatment twice are formed on the substrate 6. The width of the region 9 subjected to the plasma processing twice is 1/3 W, which is narrower than the width of the plasma processing region 7. Again, the state of the substrate 6 when the same movement and plasma generation are repeated is as shown in FIG. If the plasma generation and movement are repeated many times, a pattern as shown in FIG. 7D is obtained. In FIG. 7D, the widths of the region subjected to the plasma treatment once and the region subjected to the plasma treatment twice are both 1/3 W, and in total, 2/3 W (= D). Is too narrow.

  In the plasma processing apparatus according to the present embodiment, the plasma generation unit 100 includes a plurality of electrodes, so that pattern formation can be performed at a higher speed. Therefore, it is possible to improve the processing tact required in terms of production efficiency. The size of the electrode of the plasma generation unit 100 cannot be increased so much that a standing wave is not generated even when the power supply frequency is increased to form a high-density plasma. Furthermore, the size of the electrode is also limited by the deflection of the electrode and the processing accuracy. This embodiment is effective when the electrodes cannot be made so large.

(Third embodiment)
A plasma processing method according to the third embodiment of the present invention will be described with reference to FIG. FIG. 8 is a diagram showing the steps of the plasma processing method according to the third embodiment of the present invention. The configuration of the plasma processing apparatus according to this embodiment is substantially the same as that described in the first embodiment. However, it is assumed that the moving mechanism 5 can move the upper electrode 2 in two directions (vertical direction and horizontal direction) that are substantially orthogonal.

  First, the control unit 120 causes the plasma generation unit 100 to perform plasma processing on the substrate 6. At this time, the dimensions of the plasma processing region 7 are set to vertical A and horizontal B as shown in FIG.

  Next, the control unit 120 causes the moving mechanism 5 to change the position of the upper electrode 2. However, this process only needs to change the plasma irradiation region on the substrate, and may move the substrate 6 as described in the second embodiment. Alternatively, it may be realized by other methods.

  In the present embodiment, the moving mechanism 5 moves the upper electrode 2 with respect to the substrate in the downward direction in FIG. 8 by D1 = AU and in the right direction by D2 = B−V. Here, since it is necessary to have an overlapping part between the irradiation area before movement and the irradiation area after movement, 0 <D1 <A and 0 <D2 <B. FIG. 8B shows the positional relationship between the plasma processing region after this movement (the hatched portion in FIG. 8B) and the region 8 where the plasma processing has been performed once by the first plasma processing. After this movement, the control unit 120 causes the plasma generation unit 100 to generate plasma.

  Further, the control unit 120 causes the moving mechanism 5 to move the upper electrode 2 by D1 in the upward direction in FIG. 8 and D2 in the right direction, and then causes the plasma generating unit 100 to generate plasma. FIG. 8C shows the positional relationship between the plasma processing region after the movement and the region where the plasma processing has been performed so far. The hatched portion in FIG. 8 is the plasma processing region after this movement. Moreover, the area | region shown with the dotted-line frame is an area | region which has been plasma-treated so far. The region 9 subjected to the plasma treatment twice has a vertical dimension U and a horizontal dimension V. The region 9 subjected to the plasma treatment twice is narrower than the region (plasma treatment region 7) where the plasma treatment is performed by one treatment. By repeating this process and moving process, as shown in FIG. 8D, a pattern is formed in which the regions of the vertical dimension U and the horizontal dimension V that have been subjected to the plasma processing twice are arranged in the horizontal direction.

  In addition, although FIG. 8 demonstrated the case where the movement to a lower right direction and the upper right direction were repeated alternately regarding the change of the relative position with respect to the base material 6 of the plasma production | generation part 100, the movement method is restricted to this. Absent. For example, the movement in the lower right direction may be repeated. In this case, the regions that have been subjected to the plasma treatment twice are arranged in an oblique direction.

  FIG. 8 illustrates a case where D1 and D2 satisfy A × 1/2 <D1 <A and B × 1/2 <D2 <B, respectively. Similarly to the case described in the first embodiment, when the movement distance satisfies this condition, the number of processing times required to create a region that has been subjected to the plasma processing more times than other portions is small. Tesumu.

  In the invention according to the present embodiment, it is possible to form finer and more diverse patterns by performing the movement direction two-dimensionally.

(Fourth embodiment)
A plasma processing method according to the fourth embodiment of the present invention will be described with reference to FIG. FIG. 9 is a diagram showing the steps of the plasma processing method according to the fourth embodiment of the present invention. The configuration of the plasma processing apparatus according to this embodiment is almost the same as that described in the second embodiment. However, it is assumed that the plasma generation unit 100 includes a plasma head having a plurality of rectangular electrodes arranged in a straight line at regular intervals.

  First, the control unit 120 causes the plasma generation unit 100 to generate plasma. The state of the substrate 6 after that is as shown in FIG. 9A, in which the plasma processing regions 7 having the dimensions A and B are arranged at regular intervals C as shown in FIG. In the present embodiment, B <C <3B. However, as will be described later, the size of C is not limited to this.

  Thereafter, the control unit 120 moves the stage 3 in the lateral direction so that the distance between the plasma processing region after movement and the plasma processing region before movement is constant. In the present embodiment, this movement distance is (B + C) / 2. However, this process only needs to change the irradiation region, and may move the plasma processing unit as described in the first embodiment. Alternatively, it may be realized by other methods. FIG. 9B shows the positional relationship between the plasma processing region after movement (indicated by the hatched portion in FIG. 9B) and the region 8 plasma-treated once before the movement. After this movement, the control unit 120 causes the plasma generation unit 100 to generate plasma.

  Next, the control unit 120 moves the stage 3 by D1 downward in FIG. 9 and D2 leftward. Then, the plasma generation unit 100 generates plasma. FIG. 9C shows the positional relationship between the plasma processing region after the movement and the region that has been subjected to the plasma processing so far. In FIG. 9C, the hatched portion is the plasma processing region after movement, and the portion surrounded by the dotted frame is the region that has been subjected to the plasma processing region so far. In the present embodiment, it is assumed that A × 1/2 <D1 <A and B × 1/2 <V <B. This is because, as described in other embodiments, the number of processing times required to create a narrow plasma processing region can be reduced.

  Next, the control unit 120 causes the moving mechanism 5 to move the stage 3 in the horizontal direction in FIG. 9 and then causes the plasma generating unit 100 to generate plasma. This moving distance is determined so that the distance in the horizontal direction between the plasma processing region before moving and the plasma processing region after moving becomes equal. In this embodiment, (B + C) / 2. FIG. 9D shows the positional relationship between the region 9 where the plasma treatment has been performed twice and the plasma treatment region after movement (the hatched portion in FIG. 9D).

  By repeating this process and moving process, a pattern in which the regions subjected to the plasma treatment twice as shown in FIG. 9E are regularly arranged is formed.

  FIG. 9 (e) shows a case where the shapes of the two plasma-treated regions are all equal. This is realized by setting D2 to an appropriate value. However, D2 may be set to other values, and patterns having different widths of the regions subjected to the plasma treatment twice may be created.

  In the present embodiment, the distance C between the electrodes has been described as B <C <3B. However, the distance C may be other values. For example, if C <B, it is not necessary to move the relative position of the plasma processing unit with respect to the substrate in the lateral direction. In the case of C> 3B, it is possible to create a regularly arranged pattern by moving the relative position in the horizontal direction a plurality of times.

  In this embodiment mode, since a plurality of electrodes are used, high-speed pattern formation and plasma processing for a large substrate are possible. In addition, since the relative positions of the plasma generation unit and the substrate are moved two-dimensionally, it is possible to form finer and more diverse patterns.

  As described in the above embodiments, the present invention is directed to plasma treatment of a base material by plasma generated by a plasma generation unit, and a part of an irradiation area after change and a part of an irradiation area before change. Is repeated with the change of the irradiation area irradiated with plasma on the substrate. As a result, a pattern finer than the plasma dimension can be created according to the difference in the number of treatments. In particular, the present invention is advantageous for creating highly regular patterns.

  According to the present invention, regular pattern processing with a size smaller than the electrode size can be performed without using a mask, and costs for fine processing, surface treatment, and the like can be reduced.

  Further, it can be applied to the formation of a lyophilic / liquid repellent contrast on a substrate to be treated, and can be expected to be used for pattern film formation using a solution process such as an inkjet method or a printing method. By creating a striped hydrophilic / hydrophobic pattern in the present invention and forming wiring at a required location by a solution process such as an inkjet method or printing, a hydrophobic / hydrophobic line pattern is created. Will be better.

  Alternatively, in the present invention, through holes are formed in a check pattern in the interlayer insulating film, and where necessary, contact is made with the lower wiring by an ink jet method or the like. In the present invention, the separator for the polymer electrolyte fuel cell electrode is directly formed. You can also.

It is a figure which shows the functional structure of the plasma processing apparatus which concerns on this invention. 1 is a side sectional view of a plasma processing apparatus according to a first embodiment of the present invention. It is a figure which shows an example of a structure of the moving mechanism. It is a figure which shows the process of the plasma processing method which concerns on the 1st Embodiment of this invention. FIG. 5 is an enlarged side cross-sectional view of a base material that has been processed by the plasma processing method illustrated in FIG. 4. It is a sectional side view of the plasma processing apparatus which concerns on the 2nd Embodiment of this invention. It is a figure which shows the process of the plasma processing method which concerns on the 2nd Embodiment of this invention. It is a figure which shows the process of the plasma processing method which concerns on the 3rd Embodiment of this invention. It is a figure which shows the process of the plasma processing method which concerns on the 4th Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Plasma, 2 Upper electrode, 3 Stage, 4 Power supply, 5 Moving mechanism, 6 Base material, 7 Plasma processing area | region, 8 Area | region processed once plasma, 9 Area | region processed twice plasma processing, 10 Processed film, 31 Electrode unit, 32 x stage, 33 y stage, 34 cable chain, 35 power cable, 36 relay unit, 100 plasma generation unit, 110 moving unit, 120 control unit.

Claims (14)

A plasma processing apparatus comprising a generating means for generating plasma, and performing plasma processing on an irradiation area of the substrate irradiated with the plasma,
Moving means for changing the irradiation region to a new irradiation region overlapping the irradiation region;
Control means for controlling the operation of the generating means and the moving means,
The plasma processing apparatus, wherein the control unit controls operations of the generation unit and the moving unit so that the generation of the plasma and the change of the irradiation region are repeatedly performed. The irradiation area has a width W;
The plasma processing apparatus according to claim 1, wherein the moving unit changes the irradiation region by a distance smaller than W in the width direction.   The plasma processing apparatus according to claim 2, wherein the moving unit changes the irradiation region by a distance D satisfying W × 1/2 <D <W in the width direction.   The plasma processing apparatus according to claim 2, wherein the generation unit is a plasma head including a plurality of plasma generation units arranged in a direction orthogonal to the width direction. The irradiation area is a vertical A, horizontal B area,
The plasma processing apparatus according to claim 1, wherein the moving unit changes the irradiation area by a distance smaller than A in the vertical direction and changes a distance smaller than B in the horizontal direction.   The moving means changes the irradiation area by a distance D1 that satisfies A × 1/2 <D1 <B in the vertical direction and changes by a distance D2 that satisfies B × 1/2 <D2 <B in the horizontal direction. The plasma processing apparatus according to claim 5.   The plasma processing apparatus according to claim 5, wherein the generation unit is a plasma head including a plurality of plasma generation units arranged at a predetermined interval.   The plasma processing apparatus according to claim 1, wherein the moving unit is a moving mechanism that moves the generating unit. A stage for installing the base material;
The plasma processing apparatus according to claim 1, wherein the moving unit is a moving mechanism that moves the stage.   The plasma processing apparatus according to claim 8, wherein the moving mechanism is an actuator. A power source for generating a voltage between the substrate and the generating unit;
The plasma processing apparatus according to claim 1, wherein the generation unit generates plasma according to the voltage.   The plasma processing apparatus according to claim 11, wherein the power source generates a pulse voltage.   The plasma processing apparatus according to any one of claims 1 to 12, wherein an atmospheric pressure during the plasma processing is 10 to 1000 kPa. A method of performing plasma treatment on a substrate,
Irradiating the substrate with plasma, and performing a plasma treatment on an irradiation region of the substrate where the plasma is irradiated;
The plasma processing method of repeating the step of changing the irradiation region so that a part of the irradiation region after changing the irradiation region overlaps a part of the irradiation region before changing.

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