JP2009055344A - Laminated electronic component and adjusting method of frequency characteristic of laminated electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To change characteristics of an attenuation frequency band without affecting characteristics of a pass frequency band. <P>SOLUTION: This laminated electronic component 10 composed of a plurality of laminated insulating substrates (M1-M8) is provided with an external electrode 106, a first insulating substrate M2 with a first conductor pattern 121 formed thereon, a second insulating substrate M1 connected to the external electrode 106 and one part of which is superposed on the first conductor pattern 121 while a second conductor pattern 111 having a notched part in a part which is not superposed on the first conductor pattern 121 is formed thereon, and an inductor conductor 121t connected to the first conductor pattern 121. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a multilayer electronic component, and more particularly to a band pass filter, a diplexer, and a multiplexer.

  A band-pass filter having a resonance circuit formed using an inductor conductor and a capacitor is known (Patent Document 1). The passband frequency and attenuation frequency band of the bandpass filter are determined by the value of the inductor conductor and the value of the capacitor.

JP 2003-124769 A

  However, the conventional bandpass filter has a problem that it is difficult to change the characteristics of the attenuation frequency band without affecting the characteristics of the pass frequency band.

  An object of the present invention is to solve the above problems and to change the characteristics of the attenuation frequency band without affecting the characteristics of the pass frequency band.

  In order to solve the above problems, the present invention comprises the following aspects.

  According to a first aspect of the present invention, there is provided a multilayer electronic component in which a plurality of insulating substrates are stacked, wherein an external electrode, a first insulating substrate on which a first conductor pattern is formed, and the external electrode A second insulating substrate that is connected to the first conductor pattern and has a second conductor pattern that partially overlaps the first conductor pattern and has a notch in a portion that does not overlap the first conductor pattern; And an inductor conductor connected to the first conductor pattern. According to this aspect, the multilayer electronic component can easily change only the characteristics of the attenuation frequency band without affecting the characteristics of the passband frequency by having the notch.

  In the multilayer electronic component according to the first aspect of the present invention, the inductor conductor includes a first inductor conductor having one end connected to the first conductor pattern, and one end other than the first inductor conductor. And a second inductor conductor connected to the end and connected to the external electrode at the other end. According to this aspect, by providing the notch part, it is possible to easily change only the characteristics of the attenuation frequency band without affecting the characteristics of the passband frequency.

  In the multilayer electronic component according to the first aspect of the present invention, at least one of the first inductor conductor and the second inductor conductor may be used as a distributed constant element. In this aspect, even when the inductor conductor is used as a distributed constant element, it is possible to easily change only the characteristics of the attenuation frequency band without affecting the characteristics of the passband frequency.

  A multilayer electronic component according to a first aspect of the present invention includes a band-pass filter circuit having the first conductor pattern, the second conductor pattern, the first inductor conductor, and the second inductor conductor. You may have. According to this aspect, it is possible to easily change only the attenuation frequency band without affecting the passband frequency of the bandpass filter circuit.

  The multilayer electronic component according to the first aspect of the present invention is a multiplexer including a plurality of filter circuits each having a predetermined pass frequency band, and at least one of the plurality of filter circuits includes the bandpass filter. It may be a circuit. According to this aspect, it is possible to easily change only the characteristics of the attenuation frequency band without affecting the characteristics of the passband frequency of the multiplexer.

  In the multilayer electronic component according to the first aspect of the present invention, the cutout portion may have a key shape. According to this aspect, even when it is difficult to provide a straight notch portion in terms of layout, the notch portion can be provided so as to obtain a desired attenuation frequency band.

  In the multilayer electronic component according to the first aspect of the present invention, the notch may be surrounded by the second conductor pattern. According to this aspect, by arranging the notch so as to be surrounded by the second conductor pattern, only the attenuation frequency band can be changed without affecting the passband frequency.

  In the multilayer electronic component according to the first aspect of the present invention, a plurality of the cutout portions may be provided in the second conductor pattern. According to this aspect, even if a plurality of cutout portions are provided, only the attenuation frequency band can be changed without affecting the passband frequency.

  In the multilayer electronic component according to the first aspect of the present invention, the multilayer electronic component further includes a third conductor pattern overlapping the second conductor pattern on the first insulating substrate, and on the second conductor pattern. The notch portion may be provided between a portion overlapping the first conductor pattern and a portion overlapping the third conductor pattern. According to this aspect, by providing the notch portion between the two conductor patterns, only the attenuation frequency band characteristic can be changed without affecting the passband frequency characteristic.

  In the multilayer electronic component according to the first aspect of the present invention, the notch may be provided at a position that does not overlap any of the conductor patterns other than the conductor pattern connected to the external electrode. According to this aspect, since the notch and the conductor pattern forming another element do not overlap, the interaction between the notch and the other element can be suppressed.

  In the multilayer electronic component according to the first aspect of the present invention, the width of the connection portion between the external electrode and the second conductor pattern may be different from the width of the external electrode. According to this aspect, in addition to providing the notch portion, the attenuation band frequency can be reduced without affecting the passband frequency by further varying the width of the connection portion between the external electrode and the second pattern. Can be changed.

  The invention according to a second aspect of the present invention is a method of adjusting frequency characteristics of a multilayer electronic component formed by laminating a plurality of insulating substrates, the multilayer electronic component comprising an external electrode, a first conductor pattern A first insulating substrate on which is formed, a second insulating substrate connected to the external electrode and formed with a second conductive pattern that partially overlaps the first conductive pattern, and the first An inductor conductor connected to the conductor pattern, and a notch is provided on the second conductor pattern and does not overlap the first conductor pattern, and the position and size of the notch The frequency characteristics of the multilayer electronic component are adjusted by adjusting the shape. According to this aspect, it is possible to easily adjust only the attenuation frequency band without affecting the passband frequency.

1. First Example An external appearance of a bandpass filter according to a first example will be described with reference to FIGS. 1 and 2. FIG. 1 is an explanatory view schematically showing the external appearance of the bandpass filter according to the first embodiment with the upper surface thereof facing up. FIG. 2 is an explanatory view schematically showing an external appearance of the bandpass filter according to the first embodiment with the lower surface thereof facing up.

  The bandpass filter 10 is an electronic component formed by laminating a plurality of insulating substrates M1 to M8. Side electrodes 106 to 106 are formed on the side surface of the bandpass filter 10. The side electrode 102 functions as an input terminal (IN), the side electrode 104 functions as an output terminal (OUT), and the side electrode 106 functions as a ground terminal (GND). In this embodiment, four side electrodes 106 are provided.

Configuration of each insulating substrate:
FIG. 3 is an exploded perspective view showing an expanded insulating substrate constituting the bandpass filter 10 according to the first embodiment. Here, the uppermost insulating substrate M8 is a so-called lid, and no conductor pattern exists inside. Therefore, description of the insulating substrate M8 is omitted in FIG. First, the conductor pattern of each insulating substrate will be described, and then the through-hole wiring connecting the conductor patterns between the insulating substrates will be described.

  On the insulating substrate M1, a conductor pattern 111 is formed on almost the entire surface excluding the outer periphery. The conductor pattern 111 is provided with a notch 112. The conductor pattern 111 is connected to the side electrode 106.

  Conductive pattern 121 and conductive pattern 122 are formed on insulating substrate M2. The conductor pattern 121 and the conductor pattern 122 have a shape in which a convex portion for connecting the through-hole wiring is formed in a substantially rectangular shape. The conductor pattern 121 and the conductor pattern 122 overlap the conductor pattern 111 of the insulating substrate M1 when the insulating substrates are stacked.

  Four conductor patterns of conductor patterns 131 to 134 are formed on the insulating substrate M3. The conductor pattern 131 includes a substantially rectangular conductor pattern and a thin conductor pattern that connects the substantially rectangular conductor pattern to the side electrode 102. The conductor pattern 132 includes a substantially rectangular conductor pattern and a thin conductor pattern that connects the substantially rectangular conductor pattern to the side electrode 104. When the insulating substrates are stacked, the conductor pattern 133 overlaps with the protrusions of the conductor pattern 121 of the insulating substrate M2, and the conductor pattern 133 overlaps with the protrusions of the conductor pattern 122 of the insulating substrate M2.

  A conductor pattern 141 and a conductor pattern 142 are formed on the insulating substrate M4. The conductor pattern 141 is a substantially rectangular conductor pattern, and overlaps the substantially rectangular conductor pattern 133 and the conductor pattern 133 of the conductor pattern 131 of the insulating substrate M3 when the insulating substrates are stacked. The conductor pattern 142 is a substantially rectangular conductor pattern, and overlaps the substantially rectangular conductor pattern and the conductor pattern 134 of the conductor pattern 132 of the insulating substrate M3 when the insulating substrates are stacked.

  Three conductor patterns of conductor patterns 151 to 153 are formed on the insulating substrate M5. The conductor pattern 151 is a substantially rectangular conductor pattern, and overlaps a part of the conductor pattern 141 and a part of the conductor pattern 142 of the insulating substrate M4 when the insulating substrates are stacked. The conductor pattern 152 overlaps the conductor pattern 133 of the insulating substrate M3 when the insulating substrates are stacked. The conductor pattern 153 overlaps the conductor pattern 134 of the insulating substrate M3 when the insulating substrates are stacked.

  A conductor pattern 161 and a conductor pattern 162 are formed on the insulating substrate M6. The conductor pattern 161 has an elongated rod shape, and one end of the conductor pattern 161 overlaps the conductor pattern 152 of the insulating substrate M5 when the insulating substrates are stacked. The conductor pattern 162 has an elongated rod shape, and one end of the conductor pattern 162 overlaps the conductor pattern 153 of the insulating substrate M5 when the insulating substrates are stacked.

  On the insulating substrate M7, a conductor pattern 171 is formed on almost the entire surface excluding the outer periphery. The conductor pattern 171 is connected to the side electrode 106.

  The band pass filter 10 has four through-hole wirings. Through-hole wiring is wiring that connects a conductive pattern on an upper insulating substrate and a conductive pattern on a lower insulating substrate. The through-hole wiring is formed by forming a hole (through hole or via hole) penetrating the upper insulating substrate in a lower portion of the conductive pattern on the upper insulating substrate and filling the hole with a conductor. . In this embodiment, the through-hole wiring is labeled so that the last character is “t”, such as *** t.

  The through-hole wiring 121t includes a conductor pattern 121 (insulating substrate M2), a conductor pattern 133 (insulating substrate M3), a conductor pattern 141 (insulating substrate M4), a conductor pattern 152 (insulating substrate M5), and a conductor pattern 161 (insulating substrate M6). ). Through-hole wiring 122t includes conductor pattern 122 (insulating substrate M2), conductor pattern 134 (insulating substrate M3), conductor pattern 142 (insulating substrate M4), conductor pattern 153 (insulating substrate M5), and conductor pattern 162 (insulating substrate M6). ).

  The through-hole wiring 161t connects the conductor pattern 161 (insulating substrate M6) and the conductor pattern 171 (insulating substrate M7). The through-hole wiring 162t connects the conductor pattern 162 (insulating substrate M6) and the conductor pattern 171 (insulating substrate M7).

Equivalent circuit:
FIG. 4 is an equivalent circuit of the bandpass filter according to the first embodiment.

  A capacitor C <b> 11 is connected to the input terminal IN of the band pass filter 10. One end of the inductor L11 and one end of the inductor L12 are connected to the opposite side of the input terminal IN of the capacitor C11. The other end of the inductor L11 is grounded, and the other end of the inductor L12 is grounded via the capacitor C12.

  A capacitor C 21 is connected to the output terminal OUT of the band pass filter 10. One end of the inductor L21 and one end of the inductor L22 are connected to the opposite side of the output terminal OUT of the capacitor C21. The other end of the inductor L21 is grounded, and the other end of the inductor L22 is grounded via the capacitor C22.

  A capacitor C31a and a capacitor C31b are connected in series between the side opposite to the input terminal IN of the capacitor C11 and the side opposite to the output terminal OUT of the capacitor C21.

Relationship between equivalent circuit and conductor pattern shown in FIG.
FIG. 5 is an explanatory diagram showing a relationship between an element of an equivalent circuit and a conductor pattern / wiring forming the element. In FIG. 5, the characters of the conductor pattern and through-hole wiring are omitted, and only the reference numerals are shown.

  The capacitor C11 is configured by an overlap of the conductor pattern 131 (insulating substrate M3) and the conductor pattern 141 (insulating substrate M4). Similarly, the capacitor C12 is due to the overlapping of the conductor pattern 121 (insulating substrate M2) and the conductor pattern 111 (insulating substrate M1), and the capacitor C31a is due to the overlapping of the conductor pattern 141 (insulating substrate M4) and the conductor pattern 151 (insulating substrate M5). The capacitor C31b is formed by overlapping the conductive pattern 142 (insulating substrate M4) and the conductive pattern 151 (insulating substrate M5), and the capacitor C21 is formed by overlapping the conductive pattern 132 (insulating substrate M3) and the conductive pattern 142 (insulating substrate M4). C22 is constituted by the overlapping of the conductor pattern 122 (insulating substrate M2) and the conductor pattern 111 (insulating substrate M1).

  The inductor L11 is configured by a serial combination of a through-hole wiring, a conductor pattern 161, and a through-hole wiring 161t in a portion between the surface of the insulating substrate M4 and the surface of the insulating substrate M6 in the through-hole wiring 121t. Similarly, the inductor L12 is configured using a through-hole wiring in a portion between the surface of the insulating substrate M2 and the surface of the insulating substrate M4 in the through-hole wiring 121t. The inductor L21 is configured by a serial combination of a through-hole wiring, a conductor pattern 162, and a through-hole wiring 162t that are located between the surface of the insulating substrate M4 and the surface of the insulating substrate M6 in the through-hole wiring 122t. The inductor L22 is configured using a through-hole wiring in a portion between the surface of the insulating substrate M2 and the surface of the insulating substrate M4 in the through-hole wiring 122t.

  In the first embodiment, the inductors L11, L12, L21, and L22 are distributed constant elements. A distributed constant element is for a lumped constant element.For example, the physical size of the element is not small compared to the signal wavelength, and the physical size of the element is taken into account when considering the characteristics of the element. That must be handled. That is, in the distributed constant element, the relationship between the physical size of the element and the wavelength of the signal greatly affects the characteristics of the element. Even the same element can be treated as a lumped constant element when the frequency is low (the signal wavelength is long), but cannot be treated as a lumped element when the frequency is high (the signal wavelength is short). There are cases where it must be treated as a distributed constant element.

  The structure and characteristics of the notch of the bandpass filter 10 according to the first embodiment will be described with reference to FIGS. FIG. 6 is an explanatory diagram schematically showing the configuration of the notch. FIG. 7 is a graph showing the transmission characteristics (S parameter S21) of the bandpass filter 10 according to the first embodiment.

  In FIG. 6, only the conductor pattern 111, the conductor pattern 121, and the conductor pattern 122 are drawn for easy understanding of the structure of the notch 112, and the description of the other conductor patterns is omitted. Here, the length L indicates the depth of the recess of the notch 112. Looking at the relationship between the depth of the recess of the notch 112 and the transmission characteristics, at the attenuation band frequency (about 10 to 15 GHz), the frequency at which the attenuation pole is generated is higher when the notch 112 is present. Compared to the case without 112, it moves to the low frequency side. In addition, the generation frequency of the attenuation pole is shifted to the lower frequency side when the depth of the notch 112 is deeper. On the other hand, at the passband frequency (about 5 to 6 GHz), there is no difference in transmission characteristics depending on the presence or absence of the notch 112 and the depth of the recess.

  A comparative example will be described with reference to FIGS. 8 and 9. FIG. 8 is an explanatory diagram schematically showing the configuration of a bandpass filter according to a comparative example. FIG. 9 is a graph showing the transmission characteristics of the band-pass filter according to the comparative example.

  Since the comparative example and the structure of the first example are the same except for the presence or absence of the notch 112 of the conductor pattern 111 and the size of the conductor patterns 121 and 122, the description of the structure of the comparative example is omitted. In the comparative example, the length L indicates the length of the left side of the conductor pattern 121 and the length of the right side of the conductor pattern 122 in FIG. In the comparative example, the capacitances of the capacitors C12 and C22 of the equivalent circuit shown in FIG. 4 are changed by changing the sizes of the conductor patterns 121 and 122. In the comparative example, as the length L is increased (the capacitance of the capacitors C12 and C22 is increased), the generation frequency of the attenuation pole in the attenuation band frequency is shifted to the lower frequency side. However, as the length L increases, the passband frequency moves to the high frequency side. That is, by changing the capacitances of the capacitors C12 and C22, it is not possible to change only the generation frequency of the attenuation pole in the attenuation band frequency.

  As described above, according to the first embodiment, the conductor pattern 121 and the conductor pattern 111 overlap, the inductor L12 is connected to the conductor pattern 121, and the notch 112 is provided in the conductor pattern 111. . As a result, the generation frequency of the attenuation pole in the attenuation band frequency can be changed without affecting the characteristics of the pass band frequency.

  A conductor pattern 141 is connected to the end of the inductor L12 opposite to the end connected to the conductor pattern 121, the inductor L11 is connected to the conductor pattern 141, and the other end of the inductor L11 is connected to the conductor pattern 171. . According to the first embodiment, the inductor includes an inductor L12 having one end connected to the conductor pattern 121, and a conductor pattern 171 having one end connected to the other end of the inductor L12 and the other end connected to the side electrode 106. Even if the inductor L11 is connected to the conductor pattern 111, the notch 112 is provided in the conductor pattern 111, so that the generation frequency of the attenuation pole in the attenuation band frequency can be reduced without affecting the characteristics of the passband frequency. Can be changed.

  Also, when distributed constant elements are used as the inductors L11, L12, L21, and L22, it is difficult to change the inductor, and changing the capacitor as described above will affect the passband frequency. End up. However, according to the first embodiment, even if a distributed constant element is used as the inductor, the cutout portion 112 is provided in the conductor pattern 111 without affecting the characteristics of the passband frequency. The generation frequency of the attenuation pole in the attenuation band frequency can be changed.

Modification 1:
A first modification of the first embodiment will be described with reference to FIGS. 10 and 11. FIG. 10 is an explanatory diagram showing a configuration of a bandpass filter according to the first modification. FIG. 11 is a graph illustrating the transmission characteristics of the bandpass filter according to the first modification. In the first modification, the width W of the notch 112 is changed.

  By increasing the width W of the recess of the notch 112, the frequency of generation of the attenuation pole in the attenuation band frequency is lowered. On the other hand, at the passband frequency, there is no difference due to the concave width W of the notch 112. That is, as shown in the first modification, the notch 112 is provided. The width of the recess may be changed. For example, this is effective when the depth of the recess of the notch 112 cannot be increased in terms of layout.

Modification 2:
A second modification of the first embodiment will be described with reference to FIGS. FIG. 12 is an explanatory diagram showing a configuration of a bandpass filter according to the second modification. FIG. 13 is a graph showing the transmission characteristics of the bandpass filter according to the second modification. In the second modification, the shape of the notch 112 is a key shape.

  When the depth L of the recess of the notch 112 is made constant, the generation frequency of the attenuation pole in the attenuation band frequency becomes lower when the key shape is used. Further, when the area of the notch is the same, the generation frequency of the attenuation pole in the attenuation band frequency is higher in the key type. For example, after providing the notch 112, when it is desired to lower the generation frequency of the attenuation pole in the attenuation band frequency a little, the shape of the notch 112 may be a key shape. This is also effective when the depth of the recess of the notch 112 cannot be increased in terms of layout. Note that even if the shape of the notch 112 is a key shape, there is no difference in transmission characteristics at the passband frequency.

Modification 3:
A third modification of the first embodiment will be described with reference to FIGS. 14 and 15. FIG. 14 is an explanatory diagram illustrating a configuration of a bandpass filter according to the third modification. FIG. 15 is a graph illustrating the transmission characteristics of the bandpass filter according to the third modification. In the third modification, the notch 112 is provided inside the conductor pattern 111.

  By increasing the length L of the notch 112, the frequency at which the attenuation pole is generated at the attenuation band frequency is lowered. As compared with the first embodiment, when the size of the notch 112 is the same, the third modification has a higher attenuation pole generation frequency in the attenuation band frequency than the first embodiment. This is effective when it is desired to change the frequency at which the attenuation pole is generated, but not to change it greatly. Note that there is no difference in the passband frequency due to the concave length L of the notch 112.

Modification 4:
A modification 4 of the first embodiment will be described with reference to FIGS. 16 and 17. FIG. 16 is an explanatory diagram showing a configuration of a bandpass filter according to the fourth modification. FIG. 17 is a graph showing the transmission characteristics of the bandpass filter according to the fourth modification. In the fourth modification, a plurality of cutout portions 112 are provided.

  By increasing the length L of the notch 112, the frequency at which the attenuation pole is generated at the attenuation band frequency is lowered. Compared to the first embodiment, when the area of the cutout portion 112 is the same, the variation 4 has a higher attenuation pole generation frequency in the attenuation band frequency than the first embodiment. However, in the fourth modification, the notch 112 can be provided symmetrically, and for example, there is an advantage that the input side circuit and the output side circuit can be made symmetrical including the layout. Note that there is no difference in the passband frequency due to the concave length L of the notch 112.

Modification 5:
Modification 5 of the first embodiment will be described with reference to FIGS. 18 and 19. FIG. 18 is an explanatory diagram illustrating a configuration of a bandpass filter according to the fifth modification. FIG. 19 is a graph showing the transmission characteristics of the bandpass filter according to Modification 5. In Modification 5, a notch 112 is provided between a portion of the conductor pattern 111 that overlaps the conductor pattern 121 and a portion of the conductor pattern 111 that overlaps the conductor pattern 122.

  By increasing the length L of the notch 112, the frequency at which the attenuation pole is generated in the attenuation band frequency moves to the high frequency side unlike the first embodiment. In both the first embodiment and the above-described modification, the generation frequency of the attenuation pole in the attenuation band frequency is lower when the depth of the recess of the notch is increased, that is, when the size of the notch is increased. However, in the modification 5, it becomes high conversely. Modification 5 is effective when it is desired to move the generation frequency of the attenuation pole in the attenuation band frequency to the high frequency side. At the passband frequency, there is no difference due to the concave depth L of the notch 112.

Modification 6:
A modification 6 of the first embodiment will be described with reference to FIGS. FIG. 20 is an explanatory diagram showing the configuration of a bandpass filter according to the sixth modification. FIG. 21 is a graph showing the transmission characteristics of the bandpass filter according to Modification 6. In the sixth modification, the notch 112 is provided so that the notch 112 overlaps the conductor pattern 131 of the insulating substrate M3 when the insulating substrates are stacked.

  By providing the notch 112, the frequency at which the attenuation pole is generated in the attenuation band frequency is lowered. However, as compared with the first embodiment, when the depth L of the notch 112 is deeper, the generation frequency of the attenuation pole at the attenuation band frequency is not lower, and the attenuation at the attenuation band frequency is lower. The generation frequency of the pole and the depth L of the recess are not necessarily proportional. On the other hand, even if the notch 112 is provided so as to overlap the conductor pattern 131 of the insulating substrate M3, the transmission characteristic does not change at the passband frequency. Therefore, the notch 112 may be provided so as to overlap with another conductor pattern, but it is more preferable to provide the notch 112 so as not to overlap with another conductor pattern.

Modification 7:
Modification 7 of the first embodiment will be described with reference to FIGS. 22 and 23. FIG. 22 is an explanatory diagram showing a configuration of a bandpass filter according to the modified example 7. FIG. 23 is a graph showing the transmission characteristics of the bandpass filter according to Modification 7. In the modified example 7, a cutout portion 112 is provided in the conductor pattern 111, and the connection width of the connection portion 111a between the conductor pattern 111 and the side electrode 106 is narrowed.

  By narrowing the connection width of the connection portion 111a between the conductor pattern 111 and the side electrode 106, the generation frequency of the attenuation pole in the attenuation band frequency can be lowered. If the generation frequency of the attenuation pole in the attenuation band frequency is still high only by providing the notch portion 112, the connection width of the connection portion 111a between the conductor pattern 111 and the side electrode 106 is reduced as in the seventh modification. Can be lowered. Note that no change in transmission characteristics occurs at the passband frequency.

  In the modified example 7, the cutout portion 112 is provided, but the connection width of the connection portion 111a between the conductor pattern 111 and the side electrode 106 may be narrowed without providing the cutout portion 112. Conversely, the connection width of the connection portion 111a between the conductor pattern 111 and the side electrode 106 may be increased. The generation frequency of the attenuation pole in the attenuation band frequency can be increased. In Modification 5, the connection width of the connection portion 111a between the conductor pattern 111 and the side electrode 106 may be increased. The generation frequency of the attenuation pole in the attenuation band frequency can be further increased.

2. Second Embodiment A configuration of each insulating substrate of a bandpass filter according to a second embodiment will be described with reference to FIG. FIG. 24 is an exploded perspective view showing an expanded insulating substrate constituting the bandpass filter according to the second embodiment. Since the bandpass filter according to the second embodiment is substantially the same as the bandpass filter according to the first embodiment, the differences will be described. About the 2nd example, about the thing of the same function as the 1st example, the code which added 100 to the code of the 1st example is attached.

  In the second embodiment, the side electrode 208 is provided from the side electrode 202, but there are three side electrodes 206 serving as ground terminals (hereinafter, when the side electrodes 206 are distinguished, the side electrodes 206 a, Electrode 206b, side electrode 206c). One that is less than the first embodiment is an NC terminal as the side electrode 208. NC of the NC terminal means non-connection, and the NC terminal is not connected to the conductor pattern inside the band pass filter. In the first embodiment, the side electrode 106 is disposed on both sides of the side electrode 102 and on both sides of the side electrode 104. On the other hand, in the second embodiment, the two side electrodes 206 (side electrodes 206a and 206b) are arranged on both sides of the side electrode 202, but the remaining one side electrode 206 (206c) is a side electrode. It is arranged between 204 and the side electrode 208.

  A conductive pattern 211 is formed on the entire surface of the insulating substrate M1 except for the outer periphery. The conductor pattern 211 is provided with a notch 212. The notch 212 is formed so as to be recessed toward the side electrode 206c from the substantially central portion of the conductor pattern 211, the side opposite to the side electrode 206c.

  As in the first embodiment, conductor patterns are provided on the insulating substrates M2 to M7. The second embodiment is different from the first embodiment in that the shape of the conductor pattern is different, and the conductor pattern is arranged on the left side of the notch portion 212 and on the right side of the notch portion 212 in the drawing. Are different from each other in that they are not arranged. The conductor pattern 271 of the insulating substrate M7 is connected to the side electrodes 206a and 206c and is not connected to the side electrode 206b.

  In the second embodiment, the equivalent circuit and the relationship between the elements of the equivalent circuit and the conductor pattern / wiring forming the elements are the same as those in the first embodiment, and the description thereof will be omitted.

  The structure and characteristics of the notch portion of the bandpass filter according to the second embodiment will be described with reference to FIGS. FIG. 25 is an explanatory view schematically showing the configuration of the notch. FIG. 26 is a graph showing the transmission characteristics of the bandpass filter according to the second embodiment.

  In the second embodiment, if the notch 212 is not provided, an attenuation pole is not generated in the attenuation band frequency. However, by providing the notch 212, an attenuation pole is generated. Further, as the size of the notch 212 is increased, the frequency at which the attenuation pole is generated becomes lower. Even if the notch 212 is provided, the transmission characteristics do not change at the passband frequency.

  As described above, according to the second embodiment, the conductor pattern 221 and the conductor pattern 211 are overlapped, the inductor L12 is connected to the conductor pattern 221, and the notch 212 is provided in the conductor pattern 211. As a result, the attenuation pole can be generated without affecting the characteristics of the passband frequency, and further, the frequency of generation of the attenuation pole can be moved to the low frequency side by increasing the size of the notch 212.

3. Third Embodiment A third embodiment will be described with reference to FIGS. 27 and 28. FIG. FIG. 27 is an exploded perspective view (No. 1) showing an expanded insulating substrate constituting the bandpass filter according to the third embodiment. FIG. 28 is an exploded perspective view (part 2) showing the insulating substrate constituting the band-pass filter according to the third embodiment in an exploded manner. In the third embodiment, those having the same functions as those in the second embodiment are denoted by reference numerals obtained by adding 100 to the reference numerals in the second embodiment.

  Since the configuration of the insulating substrates M1 to M6 is the same as that of the second embodiment, the description thereof is omitted.

  Conductive patterns 371 to 374 are formed on the insulating substrate M7. The conductor pattern 371 is an elongated conductor pattern, and one end thereof overlaps the conductor pattern 321 of the insulating substrate M2 when the insulating substrates are stacked. The conductor pattern 372 is an elongated conductor pattern, and one end thereof overlaps the conductor pattern 322 of the insulating substrate M2 when the insulating substrates are stacked. When the insulating substrates are stacked, the conductor pattern 373 overlaps the other end of the conductor pattern 361 of the insulating substrate M6 (the end that does not overlap the conductor pattern 352 of the insulating substrate M5), and the conductor pattern 374 is the conductor pattern of the insulating substrate M6. It overlaps with the other end of 362 (the end that does not overlap the conductor pattern 353 of the insulating substrate M5).

  Conductive patterns 381 to 384 are formed on the insulating substrate M8. The conductor pattern 381 is an elongated conductor pattern. One end of the conductor pattern 381 is connected to the side electrode 302, and the other end overlaps the other end of the conductor pattern 371 of the insulating substrate M7 when the insulating substrate is stacked. The conductor pattern 382 is an elongated conductor pattern. One end of the conductor pattern 382 is connected to the side electrode 304, and the other end overlaps the other end of the conductor pattern 372 of the insulating substrate M7 when the insulating substrate is stacked. When the insulating substrates are stacked, the conductor pattern 383 overlaps the conductor pattern 373 of the insulating substrate M7, and the conductor pattern 384 overlaps the conductor pattern 374 of the insulating substrate M7.

  A conductor pattern 391 is formed on the insulating substrate M9. The conductor pattern 391 has the same configuration as the conductor pattern 371 of the insulating substrate M7 of the second embodiment.

  The bandpass filter according to the third embodiment has six through-hole wirings.

  The through-hole wiring 321t includes a conductor pattern 321 (insulating substrate M2), a conductor pattern 333 (insulating substrate M3), a conductor pattern 341 (insulating substrate M4), a conductor pattern 352 (insulating substrate M5), and a conductor pattern 361 (insulating substrate M6). And the conductor pattern 371 (insulating substrate M) 7 are connected. The through-hole wiring 322t includes a conductor pattern 322 (insulating substrate M2), a conductor pattern 334 (insulating substrate M3), a conductor pattern 342 (insulating substrate M4), a conductor pattern 353 (insulating substrate M5), and a conductor pattern 362 (insulating substrate M6). And the conductor pattern 372 (insulating substrate M7).

  The through-hole wiring 361t connects the conductor pattern 361 (insulating substrate M6), the conductor pattern 373 (insulating substrate M7), the conductor pattern 383 (insulating substrate M8), and the conductor pattern 391 (insulating substrate M9). The through-hole wiring 362t connects the conductor pattern 362 (insulating substrate M6), the conductor pattern 374 (insulating substrate M7), the conductor pattern 384 (insulating substrate M8), and the conductor pattern 391 (insulating substrate M9).

  The through-hole wiring 371t connects the conductor pattern 371 (insulating substrate M7) and the conductor pattern 381 (insulating substrate M8). The through-hole wiring 372t connects the conductor pattern 372 (insulating substrate M7) and the conductor pattern 382 (insulating substrate M8).

  An equivalent circuit of the bandpass filter according to the third embodiment will be described with reference to FIG. FIG. 29 is an equivalent circuit of a bandpass filter according to the third embodiment.

  A capacitor C11 and an inductor L13 and an inductor L14 connected in series are connected in parallel to the input terminal IN of the bandpass filter. One end of the inductor L11 is connected to the connecting portion between the inductor L13 and the inductor L14, and the other end of the inductor L11 is grounded. One end of an inductor L12 is connected to the opposite side of the input terminal IN of the capacitor C11. The other end of the inductor L12 is grounded via the capacitor C12.

  A capacitor C21 and an inductor L23 and an inductor L24 connected in series are connected in parallel to the output terminal OUT of the bandpass filter. One end of the inductor L21 is connected to the connection portion between the inductor L23 and the inductor L24, and the other end of the inductor L21 is grounded. One end of an inductor L22 is connected to the opposite side of the output terminal OUT of the capacitor C21. The other end of the inductor L22 is grounded via the capacitor C22.

  A capacitor C31a and a capacitor C31b are connected in series between the side opposite to the input terminal IN of the capacitor C11 and the side opposite to the output terminal OUT of the capacitor C21.

  When comparing the equivalent circuit of the bandpass filter of the third embodiment with the equivalent circuit of the bandpass filter of the first and second embodiments, the bandpass filter of the first and second embodiments has the input terminals IN and Only the capacitors C11 and C21 are connected to the output terminal OUT, but the bandpass filter of the third embodiment is different in that inductors L13 and L23 are added in parallel with the capacitors C11 and C21.

  The relationship between the equivalent circuit and the conductor pattern will be described with reference to FIG. FIG. 30 is an explanatory diagram showing a relationship between an element of an equivalent circuit and a conductor pattern / wiring forming the element. Here, since the configuration of the capacitor is the same as that of the first embodiment, the description thereof is omitted.

  The inductor L11 is configured by a series combination of a through-hole wiring 361t and a conductor pattern 361. The inductor L12 is configured by series coupling of through-hole wirings in a portion between the surface of the insulating substrate M2 and the surface of the insulating substrate M4 in the through-hole wiring 321t. The inductor L13 is configured by serial coupling of through-hole wiring in a portion between the surface of the insulating substrate M6 and the surface of the insulating substrate M7 among the conductor pattern 381, the through-hole wiring 371t, the conductor pattern 371, and the through-hole wiring 321t. . The inductor L14 is configured using a through-hole wiring in a portion between the surface of the insulating substrate M4 and the surface of the insulating substrate M6 in the through-hole wiring 321t.

  The inductor L21 is configured by a series combination of a through-hole wiring 362t and a conductor pattern 362. The inductor L22 is configured by series coupling of through-hole wirings in a portion between the surface of the insulating substrate M2 and the surface of the insulating substrate M4 in the through-hole wiring 322t. The inductor L23 is configured by series coupling of through-hole wiring in a portion between the surface of the insulating substrate M6 and the surface of the insulating substrate M7 among the conductor pattern 382, the through-hole wiring 372t, the conductor pattern 372, and the through-hole wiring 322t. . The inductor L24 is configured using a through-hole wiring in a portion between the surface of the insulating substrate M4 and the surface of the insulating substrate M6 in the through-hole wiring 322t.

  The structure and characteristics of the notch portion of the bandpass filter according to the third embodiment will be described with reference to FIGS. FIG. 31 is an explanatory diagram schematically showing the configuration of the notch. FIG. 32 is a graph showing the transmission characteristics of the bandpass filter according to the third example.

  Looking at the relationship between the depth of the recess in the notch 312 and the transmission characteristics, the greater the depth of the notch in the notch 312 is at the attenuation band frequency, the generation frequency of the attenuation pole is shifted to the lower frequency side. Yes. On the other hand, there is no difference in the passband frequency due to the depth of the recess of the notch 312.

  According to the third embodiment, even if the inductors L13 and L23 are provided in parallel with the capacitors C11 and C21, by providing the notch portion 312, the attenuation band frequency is not affected without affecting the characteristics of the passband frequency. The generation frequency of the attenuation pole can be changed. That is, regardless of the configuration of the input part and the output part, by providing the notch part in the conductor pattern 311, the generation frequency of the attenuation pole in the attenuation band frequency can be changed without affecting the characteristics of the pass band frequency. .

  In the second and third embodiments, only the left half of the multilayer electronic component is provided with a conductor pattern. This is not to say that a conductor pattern is not arranged in the right half of the multilayer electronic component, but another filter circuit is formed in the right half of the multilayer electronic component to form a diplexer and a multiplexer. Good. This will be described in the fourth embodiment. In addition, the di (di) of the diplexer (diplexer) is a prefix meaning “2”, and the multi (multi) of the multiplexer (multiplex) is a prefix meaning “many”. Including diplexer.

4). Fourth Embodiment A diplexer according to a fourth embodiment will be described with reference to FIGS. FIG. 33 is an exploded perspective view (part 1) showing an expanded insulating substrate constituting the diplexer according to the fourth embodiment. FIG. 34 is an exploded perspective view (No. 2) showing an expanded insulating substrate constituting the diplexer according to the fourth embodiment. FIG. 35 is an exploded perspective view (No. 3) showing an expanded insulating substrate constituting the diplexer according to the fourth embodiment. FIG. 36 is an equivalent circuit diagram of the diplexer according to the fourth embodiment. FIG. 37 is an explanatory diagram showing a relationship between an element of an equivalent circuit and a conductor pattern / wiring forming the element.

  The diplexer according to the fourth embodiment has two band pass filters, that is, a high band filter 40a and a low band filter 40b. In the fourth embodiment, the functions of the side electrode 408 from the side electrode 402 are different from those in the third embodiment. The side electrode 402 is an ANT terminal, the side electrode 404 is an HB terminal, and the side electrode 408 is an LB terminal. The high band filter 40a is almost the same as the band pass filter described in the third embodiment. Therefore, in the fourth embodiment, those having the same functions as those in the third embodiment are denoted by reference numerals obtained by adding 100 to the reference numerals in the third embodiment.

  In the exploded perspective views shown in FIGS. 33 to 35, the high band filter 40a is constituted by a conductor pattern formed on the left half of each insulating substrate, and the low band filter 40b is a conductor formed on the right half of each insulating substrate. Consists of patterns. Hereinafter, the configuration of the diplexer will be described separately for the high-band filter 40a and the low-band filter 40b.

Configuration of the high band filter 40a:
The configuration of the high band filter 40a from the insulating substrate M2 to the insulating substrate M8 is the same as that of the third embodiment. Therefore, description of the configuration from the insulating substrate M2 to the insulating substrate M8 is omitted, and only the insulating substrate M1 and the insulating substrate M9 to the insulating substrate M12 will be described.

  The configuration of the insulating substrate M1 is almost the same as the configuration of the third embodiment. Similar to the third embodiment, a conductor pattern 411 is formed on almost the entire surface. However, the notch portion 412 is different in that it is a key type that is folded to the right side of the drawing (low band filter 40b side). Conductive patterns 491 and 492 are formed on the insulating substrate M9. The conductor pattern 491 overlaps with the conductor pattern 483 of the insulating substrate M8, and the conductor pattern 492 overlaps with the conductor pattern 484 of the insulating substrate M8. The insulating substrates M10 and M11 have the same configuration as the insulating substrate M9, and conductor patterns 501 and 502 and conductor patterns 511 and 512 are formed, respectively. The conductor patterns 501 and 511 overlap with the conductor pattern 483 of the insulating substrate M8, and the conductor patterns 502 and 512 overlap with the conductor pattern 484 of the insulating substrate M8. A conductor pattern 521 is formed on the insulating substrate M12. The configuration of the insulating substrate M12 is the same as that of the insulating substrate M9 of the third embodiment.

  The diplexer according to the fourth embodiment has six through-hole wirings in the high band filter 40a.

  Since the configuration of the through-hole wirings 421t, 422t, 471t, and 472t is the same as the configuration of the through-hole wirings 321t, 322t, 371t, and 372t of the bandpass filter according to the third embodiment, the description thereof is omitted.

  The through-hole wiring 461t includes a conductor pattern 461 (insulating substrate M6), a conductor pattern 473 (insulating substrate M7), a conductor pattern 483 (insulating substrate M8), a conductor pattern 491 (insulating substrate M9), and a conductor pattern 501 (insulating substrate M10). The conductor pattern 511 (insulating substrate M11) and the conductor pattern 521 (insulating substrate M12) are connected. The through-hole wiring 462t includes a conductor pattern 462 (insulating substrate M6), a conductor pattern 474 (insulating substrate M7), a conductor pattern 484 (insulating substrate M8), a conductor pattern 492 (insulating substrate M9), and a conductor pattern 502 (insulating substrate M10). The conductor pattern 512 (insulating substrate M11) and the conductor pattern 521 (insulating substrate M12) are connected.

  Since the equivalent circuit of the high band filter 40a of the diplexer according to the fourth embodiment is the same as the equivalent circuit of the band pass filter according to the third embodiment, the description thereof is omitted.

  Regarding the high band filter 40a of the diplexer according to the fourth embodiment, the relationship between the elements of the equivalent circuit and the conductor pattern / wiring forming the elements will be described. Since the configuration of the capacitor and the configurations of the inductors L12, 13, 14, 22, 23, and 24 are the same as those in the third embodiment, the description thereof is omitted.

  The inductor L11 is the same as that of the third embodiment in that the inductor L11 is configured by a series connection of the through-hole wiring 461t and the conductor pattern 461. However, in the third embodiment, the through-hole wiring 361t is a wiring connecting the surface of the insulating substrate M6 to the surface of the insulating substrate M9, whereas in the fourth embodiment, the through-hole wiring 461t is the insulating substrate M6. The difference is that the wiring connects the surface of the insulating substrate M12 to the surface of the insulating substrate M12. The same applies to the inductor L21.

Configuration of the low-band filter 40b:
For the low-band filter 40b, the conductor pattern formed on each insulating substrate will not be described individually, and each element of the equivalent circuit shown in FIG. Whether it is formed using hole wiring will be described.

  Capacitor C41 is due to the overlap of conductor pattern 423 (insulating substrate M1) and conductor pattern 411 (insulating substrate M1), and capacitor C42 is due to the overlapping of conductor pattern 532 (532a (insulating substrate M13)) and conductor pattern 522 (insulating substrate M12). The capacitor C43 overlaps the conductor pattern 532 (532b (insulating substrate M13)) and the conductor pattern 523 (insulating substrate M12), and the capacitor C44 overlaps the conductor pattern 531 (insulating substrate M13) and the conductor pattern 523 (insulating substrate M12). Thus, the capacitor C45 is configured by overlapping the conductor pattern 424 (insulating substrate M2) and the conductor pattern 411 (insulating substrate M1).

  Inductor L41 includes conductor pattern 513 (insulating substrate M11), through-hole wiring 503t (insulating substrate M11 to insulating substrate M10), conductor pattern 503 (insulating substrate M10), through-hole wiring 493t (insulating substrate M10 to insulating substrate M9), Conductive pattern 493 (insulating substrate M9), through-hole wiring 485t (insulating substrate M9 to insulating substrate M8), conductive pattern 485 (insulating substrate M8), through-hole wiring 474t (insulating substrate M8 to insulating substrate M7), conductive pattern 474 ( Insulating substrate M7), through-hole wiring 463t1 (insulating substrate M7 to insulating substrate M6), and conductor pattern 463 (insulating substrate M6) are connected in series. 33 to 35, when the connection between the conductor pattern and the through-hole wiring is followed, the inductor L41 starts from the conductor pattern 513 on the insulating substrate M11 and is a coil connected to the lower insulating substrate while drawing a so-called spiral counterclockwise. It is. 33 to 35, since the length of the through-hole wiring looks long, the length of the through-hole wiring is the same as the thickness of the insulating substrate and is short. In this embodiment, since the length of the conductor pattern formed on each insulating substrate is considerably longer than the length of the through-hole wiring, the conductor pattern is dominant in the contribution to the inductor. Therefore, in FIG. 37 (b), only the conductor pattern is shown.

  Inductor L42 includes conductor pattern 494 (insulating substrate M9), through-hole wiring 486t (insulating substrate M9 to insulating substrate M8), conductor pattern 486 (insulating substrate M8), through-hole wiring 475t (insulating substrate M8 to insulating substrate M7), The conductor pattern 475 (insulating substrate M7), the through-hole wiring 463t2 (insulating substrate M7 to insulating substrate M6), and the conductor pattern 463 (insulating substrate M6) are included. The inductor L42 is a coil that starts from the conductor pattern 494 on the insulating substrate M9 and is connected to the lower layer while drawing a so-called spiral clockwise.

  The inductor L43 includes a conductor pattern 515 (insulating substrate M11), a through hole wiring 505t (insulating substrate M11 to insulating substrate M10), a conductor pattern 505 (insulating substrate M10), a through hole wiring 495t (insulating substrate M10 to insulating substrate M9), Conductive pattern 495 (insulating substrate M9), through-hole wiring 487t (insulating substrate M9 to insulating substrate M8), conductive pattern 487 (insulating substrate M8), through-hole wiring 476t (insulating substrate M8 to insulating substrate M7), conductive pattern 476 ( Insulating substrate M7), through-hole wiring 464t (insulating substrate M7 to insulating substrate M6), and conductive pattern 464 (insulating substrate M6) are included. The inductor L43 is a coil that starts from the conductor pattern 515 on the insulating substrate M11 and is connected to the lower layer while drawing a so-called spiral counterclockwise.

  Inductor L44 includes conductor pattern 516 (insulating substrate M11), through-hole wiring 506t (insulating substrate M11 to insulating substrate M10), conductor pattern 506 (insulating substrate M10), through-hole wiring 496t (insulating substrate M10 to insulating substrate M9), Conductive pattern 496 (insulating substrate M9), through-hole wiring 488t (insulating substrate M9 to insulating substrate M8), conductive pattern 488 (insulating substrate M8), through-hole wiring 477t (insulating substrate M8 to insulating substrate M7), conductive pattern 477 ( Insulating substrate M7), through-hole wiring 465t (insulating substrate M7 to insulating substrate M6), and conductive pattern 465 (insulating substrate M6) are included. The inductor L44 is a coil that starts from the conductor pattern 516 on the insulating substrate M11 and is connected to the lower layer while drawing a so-called spiral counterclockwise.

    The structure and characteristics of the notch portion of the diplexer according to the fourth embodiment will be described with reference to FIGS. FIG. 38 is an explanatory view schematically showing the configuration of the notch. FIG. 39 is a graph showing the transmission characteristics of the high band filter 40a of the diplexer according to the fourth embodiment.

    Looking at the relationship between the size of the recess of the notch 412 and the transmission characteristics, the larger the notch 412 is at the attenuation band frequency, and the generation frequency of the attenuation pole is shifted to the lower frequency side. On the other hand, no difference occurs in the passband frequency.

  According to the fourth embodiment, by providing the notch portion 412, not only the bandpass filter but also the diplexer can change the attenuation band frequency characteristic without affecting the passband frequency characteristic. Can do.

In the first to fourth embodiments, the shape of the notch portion is a rectangle or a key shape, but the shape is not limited to these, and other shapes such as a triangle, a polygon, It may be semicircular, circular, elliptical or the like.
In the above description, the multilayer electronic component has been described as an example of the embodiment of the present invention. However, as an embodiment, it is a matter of course that the embodiment may be an aspect as a method of adjusting the frequency characteristics of the multilayer electronic component. is there.

  The embodiments of the present invention have been described above based on some examples. However, the above-described embodiments of the present invention are for facilitating the understanding of the present invention and limit the present invention. It is not a thing. The present invention can be changed and improved without departing from the spirit and scope of the claims, and it is needless to say that the present invention includes equivalents thereof.

It is explanatory drawing which shows typically the external appearance which turned up the upper surface of the band pass filter which concerns on a 1st Example. It is explanatory drawing which shows typically the external appearance which turned up the lower surface of the band pass filter which concerns on a 1st Example. It is an exploded perspective view which expands and shows the insulating substrate which constitutes bandpass filter 10 concerning the 1st example. It is the equivalent circuit of the band pass filter which concerns on a 1st Example. It is explanatory drawing which shows the relationship between the element of an equivalent circuit, and the conductor pattern and wiring which form an element. It is explanatory drawing which shows the structure of a notch part typically. It is a graph which shows the transmission characteristic (S parameter S21) of the band pass filter 10 which concerns on a 1st Example. It is explanatory drawing which shows typically the structure of the band pass filter which concerns on a comparative example. It is a graph which shows the transmission characteristic of the band pass filter which concerns on a comparative example. It is explanatory drawing which shows the structure of the band pass filter which concerns on the modification 1. 10 is a graph showing the transmission characteristics of a bandpass filter according to Modification 1. 10 is an explanatory diagram showing a configuration of a bandpass filter according to Modification 2. FIG. 10 is a graph showing the transmission characteristics of a bandpass filter according to Modification 2. 10 is an explanatory diagram showing a configuration of a bandpass filter according to Modification 3. FIG. 10 is a graph showing transmission characteristics of a bandpass filter according to Modification 3. 10 is an explanatory diagram showing a configuration of a bandpass filter according to Modification 4. FIG. 14 is a graph showing the transmission characteristics of a bandpass filter according to Modification 4. 10 is an explanatory diagram showing a configuration of a bandpass filter according to Modification 5. FIG. 10 is a graph showing the transmission characteristics of a bandpass filter according to Modification 5. 10 is an explanatory diagram showing a configuration of a bandpass filter according to Modification 6. FIG. 12 is a graph showing the transmission characteristics of a bandpass filter according to Modification 6. 10 is an explanatory diagram showing a configuration of a bandpass filter according to Modification 7. FIG. 14 is a graph showing the transmission characteristics of a bandpass filter according to Modification 7. It is a disassembled perspective view which expand | deploys and shows the insulated substrate which comprises the band pass filter which concerns on a 2nd Example. It is explanatory drawing which shows the structure of a notch part typically. It is a graph which shows the transmission characteristic of the band pass filter which concerns on a 2nd Example. It is the disassembled perspective view (the 1) which expand | deploys and shows the insulated substrate which comprises the band pass filter which concerns on a 3rd Example. It is the disassembled perspective view (the 2) which expand | deployed and shows the insulated substrate which comprises the band pass filter which concerns on a 3rd Example. It is the equivalent circuit of the band pass filter which concerns on a 3rd Example. It is explanatory drawing which shows the relationship between the element of an equivalent circuit, and the conductor pattern and wiring which form an element. It is explanatory drawing which shows the structure of a notch part typically. It is a graph which shows the transmission characteristic of the band pass filter which concerns on a 3rd Example. It is the disassembled perspective view (the 1) which expand | deploys and shows the insulated substrate which comprises the diplexer which concerns on a 4th Example. It is the disassembled perspective view (the 2) which expand | deploys and shows the insulated substrate which comprises the diplexer which concerns on a 4th Example. It is the disassembled perspective view (the 3) which expand | deploys and shows the insulated substrate which comprises the diplexer which concerns on a 4th Example. It is the equivalent circuit schematic of the diplexer which concerns on a 4th Example. It is explanatory drawing which shows the relationship between the element of an equivalent circuit, and the conductor pattern and wiring which form an element. It is explanatory drawing which shows the structure of a notch part typically. It is a graph which shows the transmission characteristic by the side of the high band filter of the diplexer which concerns on a 4th Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Band pass filter 40a ... High band filter 40b ... Low band filter 102 ... Side electrode 104 ... Side electrode 106 ... Side electrode 111 ... Conductor pattern 111a ... Connection part 112 ... Notch part 121 ... Conductor pattern 121t ... Through-hole wiring 122 ... Conductor pattern 122t ... through hole wiring 131 ... conductor pattern 132 ... conductor pattern 133 ... conductor pattern 134 ... conductor pattern 141 ... conductor pattern 142 ... conductor pattern 151 ... conductor pattern 152 ... conductor pattern 153 ... conductor pattern 161 ... conductor pattern 161t ... through Hole wiring 162 ... Conductor pattern 162t ... Through-hole wiring 171 ... Conductor pattern 202 ... Side electrode 204 ... Side electrode 206 ... Side electrode 206a ... Side electrode 206b ... Side electrode 206c ... Side electrode 208 ... Side electrode 211 ... Conductor pattern 212 ... Notch 221 ... Conductor pattern 271 ... Conductor pattern 302 ... Side electrode 304 ... Side electrode 311 ... Conductor pattern 312 ... Notch 321 ... Conductor pattern 321t ... Through hole Wiring 322 ... Conductor pattern 322t ... Through-hole wiring 333 ... Conductor pattern 334 ... Conductor pattern 341 ... Conductor pattern 342 ... Conductor pattern 352 ... Conductor pattern 353 ... Conductor pattern 361 ... Conductor pattern 361t ... Through hole wiring 362 ... Conductor pattern 362t ... Through Hole wiring 371 ... conductor pattern 371 ... conductor pattern 371t ... through hole wiring 372 ... conductor pattern 372t ... through hole wiring 373 ... conductor pattern 374 ... conductor pattern 381 Conductor pattern 381 ... Conductor pattern 382 ... Conductor pattern 383 ... Conductor pattern 384 ... Conductor pattern 391 ... Conductor pattern 402 ... Side electrode 404 ... Side electrode 408 ... Side electrode 411 ... Conductor pattern 412 ... Notch 421t ... Through-hole wiring 422t ... Through-hole wiring 423 ... Conductor pattern 424 ... Conductor pattern 461 ... Conductor pattern 461t ... Through-hole wiring 462t ... Through-hole wiring 463 ... Conductor pattern 463t1 ... Through-hole wiring 463t2 ... Through-hole wiring 464 ... Conductor pattern 464t ... Through-hole wiring 465 ... Conductor pattern 465t ... through hole wiring 466 ... conductor pattern 473 ... conductor pattern 474 ... conductor pattern 474t ... through hole wiring 475 ... conductor pattern 475t ... Through-hole wiring 476 ... Conductor pattern 476t ... Through-hole wiring 477 ... Conductor pattern 477t ... Through-hole wiring 483 ... Conductor pattern 484 ... Conductor pattern 485 ... Conductor pattern 485t ... Through-hole wiring 486 ... Conductor pattern 486t ... Through-hole wiring 487 ... Conductor Pattern 487t ... Through hole wiring 488 ... Conductor pattern 488t ... Through hole wiring 491 ... Conductor pattern 492 ... Conductor pattern 493t ... Conductor pattern 493t ... Through hole wiring 494 ... Conductor pattern 494t ... Through hole wiring 495 ... Conductor pattern 495t ... Through hole wiring 496 ... Conductor pattern 496t ... Through hole wiring 501 ... Conductor pattern 502 ... Conductor pattern 503 ... Conductor pattern 503t ... Through hole wiring 50 ... Conductor pattern 505t ... Through-hole wiring 506 ... Conductor pattern 506t ... Through-hole wiring 511 ... Conductor pattern 512 ... Conductor pattern 513 ... Conductor pattern 515 ... Conductor pattern 516 ... Conductor pattern 521 ... Conductor pattern 522 ... Conductor pattern 523 ... Conductor pattern 531 ... Conductor pattern 532 ... Conductor pattern 532a ... Conductor pattern 532b ... Conductor pattern M1 ... Insulating substrate M2 ... Insulating substrate M3 ... Insulating substrate M4 ... Insulating substrate M6 ... Insulating substrate M7 ... Insulating substrate M8 ... Insulating substrate M9 ... Insulating substrate Substrate M10 ... Insulating substrate M11 ... Insulating substrate M12 ... Insulating substrate M13 ... Insulating substrate IN ... Input terminal OUT ... Output terminal C11 ... Capacitor C12 ... Capacitor C21 ... Capacitor C22 ... Capacitor C31a ... Capacitor C31b ... Capacitor C41 ... Capacitor C42 ... Capacitor C43 ... Capacitor C45 ... Capacitor C45 ... Capacitor L11 ... Inductor L13 ... Inductor L14 ... Inductor L21 ... Inductor L22 ... Inductor L23 ... Inductor L24 ... Inductor L41 ... Inductor L42 ... Inductor L43 ... Inductor

Claims (12)

A laminated electronic component in which a plurality of insulating substrates are laminated,
An external electrode;
A first insulating substrate on which a first conductor pattern is formed;
A second insulating substrate connected to the external electrode and formed with a second conductor pattern that partially overlaps the first conductor pattern and has a notch in a portion that does not overlap the first conductor pattern When,
An inductor conductor connected to the first conductor pattern;
A multilayer electronic component comprising: In the multilayer electronic component according to claim 1, as the inductor conductor,
A first inductor conductor having one end connected to the first conductor pattern;
A second inductor conductor having one end connected to the other end of the first inductor conductor and the other end connected to the external electrode;
A multilayer electronic component comprising: The multilayer electronic component according to claim 2,
A multilayer electronic component using at least one of the first inductor conductor and the second inductor conductor as a distributed constant element. The multilayer electronic component includes a band-pass filter circuit having the first conductor pattern, the second conductor pattern, the first inductor conductor, and the second inductor conductor according to claim 2 or claim 3.
Multilayer electronic components. The multilayer electronic component according to claim 4,
The multilayer electronic component is a multiplexer including a plurality of filter circuits each having a predetermined pass frequency band,
The multilayer electronic component, wherein at least one of the plurality of filter circuits is the bandpass filter circuit. In the multilayer electronic component according to any one of claims 1 to 6,
A multilayer electronic component in which the notch has a key shape. In the multilayer electronic component according to any one of claims 1 to 6,
The cutout portion is a multilayer electronic component surrounded by the second conductor pattern. In the multilayer electronic component according to any one of claims 1 to 7,
A multilayer electronic component, wherein the second conductor pattern includes a plurality of the notches. The multilayer electronic component according to any one of claims 1 to 8, further comprising:
Having a third conductor pattern overlapping the second conductor pattern on the first insulating substrate;
A multilayer electronic component, wherein the notch is provided between a portion overlapping the first conductor pattern and a portion overlapping the third conductor pattern on the second conductor pattern. In the multilayer electronic component according to any one of claims 1 to 9,
The multilayer electronic component, wherein the cutout portion is provided at a position where it does not overlap with any conductor pattern other than the conductor pattern connected to the external electrode. In the multilayer electronic component according to any one of claims 1 to 10,
A multilayer electronic component, wherein a width of a connection portion between the external electrode and the second conductor pattern is different from a width of the external electrode. A method for adjusting frequency characteristics of a multilayer electronic component formed by laminating a plurality of insulating substrates,
The multilayer electronic component includes an external electrode,
A first insulating substrate on which a first conductor pattern is formed;
A second insulating substrate connected to the external electrode and formed with a second conductor pattern that partially overlaps the first conductor pattern;
An inductor conductor connected to the first conductor pattern;
With
By providing a notch on the second conductor pattern and not overlapping the first conductor pattern, and adjusting the position, size, and shape of the notch, the multilayer electronic component A method of adjusting frequency characteristics of a multilayer electronic component that adjusts frequency characteristics.

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